554351 五、發明說明（1) 【發明的應 本發明 k方法，特 元件的製造 【發明的背 一般的 造方法是將 胚上，然後 層的電阻或 元件中的線 由於這 厚膜印刷的 表面粗糙度 太大以及特 共燒時造成 勻、以及每 素，都會造 生胚與陶兗 材料特性發 在焉頻 更形重要， 在電子產品 更為大量的 體產品的良 方式印刷於生胚上，而 的印刷厚度、均勻性和 容易造成元件規格變異 件生胚與多層陶兗生胚 層陶瓷整體收縮不均 間收縮率的差異等因 變動。再加上厚膜元件 擴散專問題，也會使得 性。 1丨付任的精度隨頻率 用範圍】 疋關於一種低温共燒陶兗基板之内埋元件的製 別是關於一種低溫共燒陶瓷基板之高精度内埋 方法。 景】 低溫共燒陶瓷製程中，埋入式電容或電阻的製 這些元件和金屬電極以厚膜方式印刷於陶瓷生 經陶竟生胚疊層後共同燒結。如此，將疊於内 電容元件内埋於低溫共燒陶瓷基板以形成整合 路或元件之一部份。 種内埋元件是採用厚膜 尺寸不易掌控，其元件 也有很大的變化範圍， 性不良。同時，厚膜元 的個別收縮率差異、多 一批次的產品和樣品之 成無法預估的元件特性 生胚間產生反應和相互 生變異而影響到元件特 鉍试1摧斗、ΛΛ %丄 埋入元件的良率偏低。 幸工巧可攜式的要求下 拖人；此丨、,、士， 趨向於電路基板中加 盘穿舌值# 、體積和重量，如此將使得 率嚴重偏低。因此，旛 應用低溫共燒陶瓷埋入 554351 五、發明說明（2) 阻、電容等 開發具有高 成為電子產 重點放在盡 特性變異。 用一層金屬 X軸與γ軸尺 致尺寸誤差 則是應用於 寸的溝槽再 件燒結前尺 生太大的差 方法是於多 的生胚層。 元件收縮率 燒時其多層 莞基板材料 係改善部分 元件製造方 出可應用於 【發明之目 鑒於以 陶瓷基板之 製作於低溫 被動元件的產品目前仍然無法大量上市。於是 精度内埋元件之低溫共燒陶瓷基板的製作方法 品小型化當務之急，現有專利中多數是將開發 量提高内埋元件的尺寸精度以降低内埋元件的 如美國弟6 0 5 5 1 5 1號專利案所應用的方法為利' 板限制多層陶瓷生胚的尺寸，使其於燒結中的 寸不產生收縮，藉以避免内埋元件因收縮而導 進而影響到元件特性。美國第6丨〇 〇 78 7專利案 製作内埋電阻的方法上，其利用先製作固定尺 填入電阻油墨的方式，以得到更準確的電阻元 寸使得後續經過燒結的電阻元件尺寸不致於產 別。以及，美國第5708 570號專利案所提出的 層共燒陶瓷之上下表面各疊一層控制燒結收縮 該層限制燒結收縮的生胚層材料是選擇與内埋 及熱膨脹係數均很接近的生胚材料，以控制共 陶瓷生胚的收縮率，以避免内埋元件和多層陶 共燒時，收縮率差異所產生的問題。上述^法 内埋=件製程上的缺點。但是應用以上的内埋 式依舊難以準確的調整内埋元件的特性，製造 高頻領域之具有高精確特性的内埋元件。 的與概述】 亡習知技術的問題，本發明提出一種低溫共燒 ::度：埋元件的製造方法。此方法係將元件 Ά陶兗基板生胚表面再共燒，$是於燒結後554351 V. Description of the invention (1) [Invention should be the method of the present invention, the manufacture of special components [The general method of making the back of the invention is to put the embryo on the surface, then the resistance of the layer or the line in the component due to the thick film printed surface The roughness is too large and the uniformity is caused when the co-firing is performed, and every element will produce the embryo and the ceramic material. The characteristics of the material are more important in the frequency, and it is printed on the raw embryo in a good way for a larger number of electronic products. However, the printing thickness, uniformity, and the difference in shrinkage between the overall shrinkage unevenness of the raw embryo and the multilayer ceramic germ layer ceramic that are likely to cause variations in component specifications are subject to change. Coupled with the problem of diffusion of thick film elements, it also makes it more sexual. 1 丨 Accuracy as a function of frequency】 疋 About the manufacture of a low-temperature co-fired ceramic substrate embedded components More specifically, a high-precision embedded method of a low-temperature co-fired ceramic substrate. Scenery] In the process of low-temperature co-firing ceramics, the production of embedded capacitors or resistors. These components and metal electrodes are printed on ceramics in a thick film and laminated together after sintering. In this way, the supercapacitor element is embedded in a low temperature co-fired ceramic substrate to form an integrated circuit or part of the element. This kind of embedded component adopts thick film size which is not easy to control, and its component also has a large range of variation, which has poor performance. At the same time, the difference in individual shrinkage of thick film elements, the unpredictable component characteristics of an additional batch of products and samples, and the reaction and mutual variation between the raw embryos affect the component bismuth test, ΛΛ% 丄The yield of embedded components is low. Fortunately, workers are dragged under the requirements of portable; this, tends to increase the value of the tongue #, volume and weight in the circuit board, which will make the rate seriously lower. Therefore, the use of low-temperature co-fired ceramics for embedding 554351 V. Description of the invention (2) The development of resistance, capacitance, etc. has become high. Using a layer of metal X-axis and γ-axis ruler to cause dimensional error is applied to the inch-sized groove and then the ruler is too large before sintering. The method is to produce more germ layers. Element shrinkage rate Multi-layer substrate material during firing is an improvement part of the component manufacturing method can be applied to the [invention purposes] In view of the ceramic substrate made of low-temperature passive components products are still not available in large quantities. Therefore, miniaturization of low-temperature co-fired ceramic substrates for precision embedded components is a matter of urgency. Most of the existing patents increase the amount of development to improve the dimensional accuracy of embedded components to reduce the number of embedded components. For example, the American brother 6 0 5 5 1 5 1 The method used in the patent case is to limit the size of the multilayer ceramic green body by the plate, so that the shrinkage of the ceramic sintering does not occur, so as to avoid the shrinkage of the embedded component and thereby affect the characteristics of the component. In the method of manufacturing embedded resistors in the U.S. Patent No. 6 丨 0077, it uses a method of first making a fixed ruler and filling in the resistance ink to obtain a more accurate resistance element size so that the size of the subsequent sintered resistance element will not be produced. do not. In addition, the upper and lower surfaces of the layered co-fired ceramics proposed in U.S. Patent No. 5708 570 are stacked on top and bottom surfaces to control sintering shrinkage. In order to control the shrinkage rate of the co-ceramic green embryo, to avoid the problems caused by the shrinkage difference when co-firing the embedded components and multilayer ceramics. The above-mentioned method has the disadvantages of embedded process. However, it is still difficult to accurately adjust the characteristics of embedded components by using the above-mentioned embedded type, and to manufacture embedded components with high accuracy in the high-frequency field. And summary] In view of the problems of conventional technologies, the present invention proposes a method for co-firing at low temperature :: degree: buried components. This method involves co-firing the surface of the element 胚 pottery 兖 substrate and the green embryo.
第7頁 554351 五、發明說明（3) 之低溫共燒陶瓷基板表面製作元 雷射式JL # 士 4 μ & 乂、、、口後之几件可利用 件已經燒結成型並且經古件的目私值，由於兀 只會造成特定的特：偏;：精；Γ周整’最後的燒結步驟 — 寸Γ偏移里，因此，本發明可以嬸P古姓 確度的疋件特性與提高產品的良率。此外，岸用：二】； 降低陶瓷基板之生胚盥元件之4U ^外應用本發明可 散。 /、兀仵之生胚材料的相互反應或擴 -扯ί 3上述目的’本發明所提供之低溫共燒陶瓷芙板之 南精度内埋元件的製造方法，其二 作於尚未燒結的區塊層表面後再加以= = 製 兀件可透過雷射或其他方式調整 ^ 值；之後再與多層陶究基板線路架二 二結合：加以燒結’使元件内埋於多層陶:是 件^燒結成型並且㈣高精度的調整 ^ 確度的元件特性與提高產品的良率。’…以獲侍南精 你士百ί將低溫共燒基板或是整合元件中之部分區塊片製 作成内含設計電路之多層基板生胚；再依電路設計將 ^格的被動疋件與保護元件製作於這些未經燒結的多層基 板生胚區塊表面之後進行共燒；然後以各種工呈盥方ς ς ^元件^特性調整；最後1其餘未燒結的多層陶曼生胚 區塊與前述表面製作有元件並燒結後的多層陶瓷區塊交替Page 7 554351 V. Description of the invention (3) Production of the surface of the low temperature co-fired ceramic substrate Yuan laser type JL # 士 4 μ & 乂 ,,, and several of the available parts have been sintered and formed. As the private value of the project can only cause specific characteristics: partial; fine; Γ rounding, the final sintering step-inch Γ offset, so the present invention can improve the characteristics of the ancient name and improve the product Yield. In addition, shore use: 2]; The application of the present invention can be reduced by reducing the 4U ^ external application of the ceramic element on the ceramic substrate. / 、 Mutual reaction or expansion of the raw material of Vulture vulgaris. 3 The above-mentioned purpose, a method for manufacturing the low-precision embedded component of the low-temperature co-fired ceramic plate provided by the present invention. After the surface of the layer is added, the value can be adjusted by laser or other methods. After that, it can be combined with the multilayer ceramic substrate, circuit board, and frame: sintering to make the component buried in the multilayer ceramic: sintering. And ㈣ high-precision adjustment ^ accuracy of the component characteristics and improve product yield. '... in order to obtain a low-temperature co-fired substrate or a part of the integrated components in the integrated component into a multilayer substrate containing a design circuit; and then use the circuit design to integrate the passive components and The protective elements are made on the surface of the green embryo block of these unsintered multilayer substrates and then co-fired; then the characteristics are adjusted with various tools; the final 1 remaining unsintered multilayer Taoman green embryo blocks and the aforementioned surface Alternating multilayer ceramic blocks with components and sintered
第8頁 554351 制收縮燒結 埋元件。 另一種實行 燒基板或是 之多層陶甍 依電路設計 多層基板熟 的特性調整 前述表面製 合以進行限 共燒陶瓷内 種製程所包 步驟，係利 設定的目標 之多層基板 進行限制收 精確度的内 及保護元件 作。 特徵與實作 如此，即可獲得高精確度 的步驟 整合元 生胚區 將各種 胚區塊 ;最後 作有元 制收縮 埋元件 含之以 用雷射 值。最 熟胚區 縮燒結 埋元件 可使用 五、發明說明（4) 堆疊壓合以進行限 的低溫共燒陶莞内 本發明亦可以 含有·先將低溫共 作成内含設計電路 陶瓷熟胚區塊；再 護元件製作於這些 具與方法進行元件 層陶瓷生胚區塊與 瓷區塊交替堆疊壓 得南精確度的低溫 其中，以上兩 元件的特性調整的 件的特性值至產品 作有精密特性元件 ，陶瓷生胚區塊以 製程，即可獲得高 電容等被動元件以 去或是薄膜製程製 有關本發明的 詳細說明如下·· 【較佳實施例說明 本發明所揭露 的製造方法，係將 加以實施，其步驟包 件中之部分區塊層製 塊，並燒結成為多層 規格的被動元件與保 表面；然後以各種工 ’將其餘未燒結的多 件並燒結後的多層陶 燒結，如此，即可声 〇 各種工具與方法進行 或其他工具調整其元 後再堆疊這些表面製 塊和其餘未燒結的多 同時完成元件的埋入 特性。内埋之電阻、 各種厚膜元件製作方 ，茲配合圖示作最佳實施例 的低溫共燒陶曼基板之高精度内埋元件 元件與低溫共燒陶瓷基板之部分區塊生Page 8 554351 Shrink embedded sintered components. Another type of multilayer ceramics that implements burned substrates or multilayer ceramics is designed according to the characteristics of the multilayer substrates in the circuit design. The aforementioned surface combination is adjusted to carry out the steps included in the co-fired ceramic internal seeding process. The multilayer substrates are set to limit the accuracy of the target. The inner and protective elements are made. Features and implementation In this way, you can obtain high-precision steps. Integrate the original embryo area and various embryo blocks; finally, make the shrinkage embedded component and use the laser value. The most mature sintered compacted sintered embedded components can be used. 5. Description of the invention (4) Stacked and pressed for limited low-temperature co-firing ceramics. The present invention can also contain a low-temperature co-fired ceramic mature embryo block ; Re-protection components are manufactured with these methods. Component green ceramic blocks and porcelain blocks are alternately stacked to achieve a low temperature of low accuracy. Among them, the characteristic values of the above two components are adjusted to the product to have precise characteristics. Components, ceramic green embryo blocks are processed, and high-capacitance passive components can be obtained by thin film manufacturing. The detailed description of the present invention is as follows. [Preferred embodiments describe the manufacturing method disclosed by the present invention. To implement it, part of the steps in the package are made into blocks and sintered to form passive components and protective surfaces of multiple specifications; then the remaining unsintered multiple pieces and sintered multilayer ceramics are sintered by various methods, so, That is, various tools and methods can be performed or other tools can be adjusted, and then these surface blocks and other unsintered multi-simple components are completed at the same time. Filling characteristics. Embedded resistors, various thick-film component producers, and the high-precision embedded components of the low-temperature co-fired Taurman substrate shown in the figure as the best embodiment are shown in the figure.
554351554351
;、、;、後再堆$其餘未經燒結之多層陶瓷生胚區塊並 f燒結。或是於燒結後之低溫共燒陶瓷基板部分 衣7元件’再堆疊其餘未經燒結之多層陶瓷生胚 以壓合與燒結。本發明係利用燒結後之多層陶瓷 以限制後續堆疊之其餘未經燒結之多層陶瓷生胚 結所產生的收縮與變形；此外，應用本發明可降 板之生胚與元件之生胚材料的相互反應或擴散。 5枯、’兀件可以利用雷射或其他方式調整其特性至目標 值，並以此方法準確控制其元件特性的誤差值至最小範 圍。 為更詳細說明本發明，請參考第1圖與第2圖，其為本 發明第一實施例之具有高精度内埋元件之低溫共燒陶瓷基 板的製程剖面示意圖。本發明實施例的實行步驟包含有： 於待燒結之多層陶瓷基板區塊丨0之生胚表面以厚膜印刷的 方式製作電容及電阻各2 〇個並且進行共燒，如第1圖所 不’圖中之功能元件11、導體線路13及電極12是其中單一 電阻70件之示意圖；然後，分別測量經過燒結之後的各功 能元件11的特性值，即電容值和電阻值等，並且以雷射調 整個別功能元件11的特性值至每一元件的差異小於正負百 分之零點五；並且，如第2圖所示，於多層陶瓷基板區塊 1 〇的表面再堆疊另一未燒結之多層陶瓷基板區塊2 〇生胚， 於施以溫度攝氏9 0 0度與時間十分鐘的燒結之後再次測量 各功能元件11之特性，測量結果顯示功能元件丨丨於埋入後 2 0個元件之間的特性值差異量小於土 1. 5 %。 554351 五、發明說明（6) =發明另具有第二實施例，請參考第3圖至第4圖，其 瓷A ^ ^實施例之具有高精度内土里元件之低溫共燒陶 :J的衣程剖面示意圖。於已燒結之多層陶瓷基板區塊 3〇 ^面以厚膜印刷的方式製作電容及電阻各2 〇個並且進 二如第3圖所示，圖中之功能元件31、導體線路33 ，電極32是其中單一電阻元件之示意圖；然後，分別測量 =燒結之後的各功能元件31的特性值，即電容值和電阻 =等，並且以雷射調整個別功能元件31的特性值至每一元 件的差異小於正負百分之零點五；並且，如第4圖所示， 於，燒結之多層陶瓷基板區塊3〇的表面再堆疊另一未燒結 之多層陶瓷基板區塊40，於施以溫度攝氏9〇〇度與時間十 分鐘的燒結之後再次測量各功能元件3丨之特性。測量結果 顯示功能元件於埋入後2〇個元件特性值差異量小 、'° 分之 1· 5( ± 0· 5%)。 、 、 以上兩實施例之測量結果說明只要於埋入前將功处一 件的特性變異調整至± 〇· 5%以内，最後將可得到特性== 在± 1 · 5 %以内之埋入元件。 艾’、 雖然本實施例中用以製作元件於表面的多層陶竟區塊 和最後燒結階段被限制收縮的多層陶瓷生胚區塊各只^」 個’本發明之實施方法尚包含複數個用以製作元件二表面 的多層陶瓷區塊和最後燒結階段被限制收縮的多層陶^生 胚區塊，彼此交替堆疊再共燒得到多層高精度内埋元件的 低溫共燒陶瓷基板或整合元件。 ' 【發明功效】; ,,;, and then stack the remaining unsintered multilayer ceramic green blocks and sinter. Or, after the sintering, the low-temperature co-fired ceramic substrate portion 7 elements' are stacked with the remaining unsintered multilayer ceramic green embryos for compression bonding and sintering. The present invention uses sintered multilayer ceramics to limit the shrinkage and deformation of the remaining unsintered multilayer ceramic green embryo knots that are subsequently stacked; in addition, the invention can reduce the interaction between the raw embryo material of the board and the raw embryo material of the component. Or spread. The components can be adjusted to the target value by laser or other methods, and the error value of the component characteristics can be accurately controlled to the minimum range by this method. For a more detailed description of the present invention, please refer to FIG. 1 and FIG. 2, which are schematic cross-sectional views showing the manufacturing process of a low-temperature co-fired ceramic substrate with a high-precision embedded component according to the first embodiment of the present invention. The implementation steps of the embodiment of the present invention include: making 20 capacitors and resistors each by co-firing on the surface of the green embryo of the multilayer ceramic substrate block to be sintered, and co-firing, as shown in FIG. 1 'The functional element 11, conductor line 13 and electrode 12 in the figure are schematic diagrams of a single resistor of 70 pieces; then, the characteristic values of each functional element 11 after sintering, that is, the capacitance value and resistance value are measured, and The characteristic values of the individual functional elements 11 are adjusted to a difference of less than plus or minus 0.5 percent; and as shown in FIG. 2, another unsintered layer is stacked on the surface of the multilayer ceramic substrate block 10. After the sintering of the multilayer ceramic substrate block 20 was applied at a temperature of 900 ° C and a time of ten minutes, the characteristics of each functional element 11 were measured again. The measurement results showed that the functional element was 20 after the embedding. The difference between the characteristic values is less than 1.5%. 554351 V. Description of the invention (6) = The invention has a second embodiment. Please refer to Figures 3 to 4. The porcelain A ^ ^ embodiment of the low-temperature co-fired ceramics with high-precision internal soil elements: J Schematic diagram of clothing section. On the sintered multilayer ceramic substrate block, the thickness and thickness of each of the capacitors and resistors are 20 and each is shown in Figure 3. The functional elements 31, conductor lines 33, and electrodes 32 are shown in Figure 3. It is a schematic diagram of a single resistance element; then, measure the characteristic values of each functional element 31 after sintering, that is, the capacitance value and resistance = etc., and adjust the characteristic value of each functional element 31 to the difference of each element by laser. Less than plus or minus 0.5 percent; and, as shown in FIG. 4, on the surface of the sintered multilayer ceramic substrate block 30, another unsintered multilayer ceramic substrate block 40 is stacked, and a temperature of Celsius is applied. After sintering at 900 degrees and ten minutes, the characteristics of each functional element 3 were measured again. The measurement results show that the functional component has a small difference in characteristic values of 20 components after being embedded, which is 1 · 5 (± 0 · 5%) of '°. The measurement results of the above two examples show that as long as the characteristic variation of a piece of work is adjusted to within ± 0.5% before embedding, finally the characteristic can be obtained == embedded components within ± 1.5% . Ai ', although the multilayer ceramic blocks used to make components on the surface in this embodiment and the multilayer ceramic embryo blocks whose shrinkage is limited during the final sintering stage are each ``' ', the implementation method of the present invention includes a plurality of applications. The multi-layer ceramic blocks on the two surfaces of the component and the multi-layer ceramic embryo block with limited shrinkage in the final sintering stage are alternately stacked on each other and then co-fired to obtain a multilayer low-temperature co-fired ceramic substrate or integrated component with high precision embedded components. '' [Inventive effect]
第11頁 度内埋元件 基板之埋人 明方法可以 低溫共燒陶 生胚材料的 其他方式調 的内埋元件 然其並非 脫離本發明 因此本發明 範圍所界定 554351 五、發明說明（7) ,本發明提出一種低溫共燒陶瓷基板之高精 的，造方法，可應用於製造多層低溫共燒陶瓷 電容2電阻等被動元件或其他保護元件。本發 選擇元件與陶瓷基板生胚共燒，或於燒結後之 Ϊ Π Ϊ面製作元件，以降低陶瓷生胚與元件 相互反應或擴散。並φ _ 整i ρ /、中，兀件可以利用雷射或 登具特性至目標信。士义 特性U1 本發明可以獲得高精確度 符性以楗尚產品的良率。 雖然本發明> & & & 用以限定本發明，任又佳貫施例揭露如上所述， 之精神和範圍内:=習相關技藝者’在不 之專利保護範圍須:^些許之更動與潤飾， 者為準。 、本說明書所附之申請專利The method of burying the embedded component substrate can be adjusted by other methods of co-firing the ceramic raw material at low temperature. However, the embedded component does not depart from the present invention. Therefore, the scope of the present invention is defined as 554351. 5. Description of the invention (7), The invention proposes a high-precision, low-temperature co-fired ceramic substrate manufacturing method, which can be applied to the manufacture of passive components such as multilayer low-temperature co-fired ceramic capacitors or other protective components or other protective components. In the present invention, the component is selected to be co-fired with the green substrate of the ceramic substrate, or the component is produced on the 烧结 Π Π side of the sintered surface to reduce the interaction or diffusion of the ceramic green embryo and the component. With φ _ integer i ρ /, the element can use laser or boarding characteristics to the target letter. Shiyi Characteristic U1 The present invention can obtain high accuracy and conformity to the yield of fashionable products. Although the present invention > & & & is used to limit the present invention, any good practice example discloses the spirit and scope of the above-mentioned example: = The relevant skilled artisan's scope of patent protection shall be: ^ a little Changes and retouching shall prevail. Patent application attached to this specification
第12頁 — 554351 圖式簡單說明 第1圖至第2圖為本發明第一實施例之具有高精度内埋 元件之低溫共燒陶瓷基板的製程剖面示意圖；及 第3圖至第4圖為本發明第二實施例之具有高精度内埋 元件之低溫共燒陶瓷基板的製程剖面示意圖。 【圖式符號說明】 10 11 12 13 20 30 31 32 33 40 待燒結之多層陶曼基板區塊 功能元件 電極 導體線路 未燒結之多層陶瓷基板區塊 已燒結之多層陶瓷基板區塊 功能元件 電極 導體線路 未燒結之多層陶瓷基板區塊Page 12 — 554351 Brief description of the drawings Figures 1 to 2 are schematic cross-sectional views of the manufacturing process of a low-temperature co-fired ceramic substrate with a high-precision embedded component according to the first embodiment of the present invention; and Figures 3 to 4 are A schematic sectional view of a manufacturing process of a low-temperature co-fired ceramic substrate with a high-precision embedded component according to the second embodiment of the present invention. [Illustration of Symbols] 10 11 12 13 20 30 31 32 33 40 Multilayer ceramic substrate block functional element electrode conductor circuit to be sintered Unsintered multilayer ceramic substrate block Sintered multilayer ceramic substrate block function element electrode conductor Unsintered multilayer ceramic substrate block
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