CN105762019A - LCP base material RF MEMS switch preparation method - Google Patents
LCP base material RF MEMS switch preparation method Download PDFInfo
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- CN105762019A CN105762019A CN201610148997.4A CN201610148997A CN105762019A CN 105762019 A CN105762019 A CN 105762019A CN 201610148997 A CN201610148997 A CN 201610148997A CN 105762019 A CN105762019 A CN 105762019A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H49/00—Apparatus or processes specially adapted to the manufacture of relays or parts thereof
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Abstract
The invention relates to the MEMS device manufacture field, especially an LCP (Liquid Crystal Polymer) base material RF MEMS switch preparation method which mainly comprises the steps of: substrate cleaning, copper-clad surface gold plating and aftertreatment, dry treatment before sputtering, LCP substrate and rigid substrate gapless recombination before photoetching, CPW figure manufacturing, silicon dioxide insulating layer manufacturing on RF transmission lines, sacrificial layer manufacturing, film microbridge manufacturing, sacrificial layer release, etc. The LCP base material RF MEMS switch has the characteristics of lower insert loss and driving voltage and higher yield and isolation, and flexible LCP substrate flatness in a processing process can be well maintained.
Description
Technical field
The present invention relates to MEMS and manufacture field, the RFMEMS particularly to a kind of LCP base material switchs preparation method.
Background technology
LCP (liquid-crystal compounds) is New-generation microwave/millimeter wave substrate and system encapsulating material, there is dielectric constant and loss is little, use frequency range big (DC～110GHz), lightweight, thermostability and anti-flammability are strong, linear expansion coefficient is little, good corrosion resistance, flexible, collapsible, multiple structure forming temperature low (285 DEG C), passive device and active chip can together with the characteristic such as encapsulation, these characteristics have agreed with microwave/millimeter wave system to lighter, less, the demand that higher performance and lower cost direction are developed, thus in microwave/millimeter wave system, shown wide application prospect.
Compared with the RFMEMS switch that silicon materials make, LCP base material RFMEMS switch has less loss, better processes compatibility.Owing to LCP is flexible parent metal, the RFMEMS switch processing the micron-scale with movable member on flexible parent metal is the huge challenge that MEMS manufacturing industry faces.
Summary of the invention
It is an object of the invention to provide the higher flexible LCP base material RFMEMS of a kind of yield rate and switch preparation method.
The object of the present invention is achieved like this, and the RFMEMS of a kind of LCP base material switchs preparation method, it is characterised in that comprise the following steps:
(1) the LCP substrate that one side covers copper is carried out processing；
(2) the LCP substrate after step (1) being processed covers copper face and carries out electrogilding；
(3) the LCP substrate after step (2) being processed is sent in dry plasma etch machine, with carbon tetrafluoride and oxygen without copper face, LCP substrate is carried out dry process；
(4) the LCP substrate after step (3) being processed is sent in magnetic control platform, without sputtering titanium tungsten golden membranous layer on copper face；
(5) the LCP substrate after step (4) being processed takes out, and with photoresist the rigid substrate of the gilding of LCP substrate Yu surfacing is carried out gapless compound；
(6), on the titanium tungsten golden membranous layer of the LCP substrate after step (5) processes, CPW figure is prepared；
(7) the LCP substrate after step (6) processes is sent in dry plasma etch machine, with argon, CPW figure is carried out dry process；LCP substrate surface growth layer of silicon dioxide after treatment again；
(8) the LCP substrate surface after step (7) processes, with photoresist the silicon dioxide being in below film micro-bridge is covered, and the position beyond covering is carried out wet etching, then carry out process of removing photoresist, RF transmission line is formed silicon dioxide insulating layer；
(9) on the LCP substrate after step (8) processes, with photoresist all sites being in beyond film micro-bridge bridge pier is covered, send in magnetic control platform, sputter golden membranous layer；
(10) the LCP substrate after step (9) being processed takes out, with photoresist the position beyond film micro-bridge is covered, again film micro-bridge being carried out gold-plated thickening, the photoresist this step covered afterwards carries out remove photoresist process and wet etching treatment, obtains film micro-bridge；
(11) the LCP substrate after step (10) being processed, carries out sacrifice layer release, and sacrifice layer includes the photoresist in step (5) and the photoresist in step (9)；
Complete the preparation of LCP base material RFMEMS switch.
Wherein, described in step (5), with photoresist the rigid substrate of the gilding of LCP substrate Yu surfacing is carried out gapless compound, specifically includes following steps:
(501) the LCP electroplating substrate gold face spin coating photoresist processed in step (5), is placed on 100 DEG C～150 DEG C hot plates and toasts 2min～5min；
(502) on the LCP substrate after step (501) processes, gland rigid substrate after rigid substrate upper press cover briquetting, heated baking 10min～15min, from hot plate, LCP substrate and rigid substrate removed and be cooled to room temperature；
(503) LCP substrate and rigid substrate after step (502) being processed are again placed on 100 DEG C～150 DEG C hot plates, after gland briquetting heated baking 10min～15min, LCP substrate and rigid substrate are removed and be cooled to room temperature from hot plate.
Wherein, the cleaning treatment described in step (1) comprises the following steps:
(101) cover copper LCP substrate 5min～10min with the M6319US cleanout fluid ultrasonic cleaning one side of 50 DEG C～70 DEG C, wash afterwards；
(102) the LCP substrate (101) processed is with the dilute hydrochloric acid ultrasonic cleaning 0.5min～1.5min of 5%～10%, washes afterwards.
Wherein, the LCP substrate described in step (2) covers copper face electrogilding and comprises the following steps:
(201) the LCP substrate after step (1) being processed covers copper face electrogilding, washes after plating；
(202) the LCP substrate isopropanol soaking and washing 5min～10min after step (201) being processed, nitrogen dries up afterwards；
(203) the LCP substrate after step (202) being processed is placed in the hot plate upper press cover glass plate baking 60min～120min of 200 DEG C～250 DEG C.
Wherein, the rigid substrate described in step (5) includes glass plate, silicon chip and ceramic wafer.
Advantages of the present invention:
The present invention is using flexible LCP single-side coated copper plate as baseplate material, by gold-plated to covering copper face, it is ensured that copper face is not oxidized；Processed by dry plasma etch, improve sputtered layer and without the adhesion between copper face；By LCP substrate and rigid substrate being carried out the methods such as gapless compound before photoetching, it is achieved the good maintenance of flexible LCP substrate flatness, and this recombination process need not by complex device, easy and simple to handle, flexible, and yield rate is high；Prepared by microbridge on the introducing of silicon dioxide layer, sacrifice layer on RF transmission line below CPW figure parcel plating thickening, microbridge, sacrifice layer release etc., it is thus achieved that LCP base material RFMEMS switchs preparation method, having the beneficial effect that of acquirement preferably
(1) on flexible LCP base material, Capacitive RF MEMS switch is successfully processed；
(2) yield rate is higher；
(3) insertion loss and driving voltage are relatively low etc..
Accompanying drawing explanation
Fig. 1 is LCP base material RFMEMS switch structure diagram.
Detailed description of the invention
Below, in conjunction with Fig. 1, the invention will be further described.
The RFMEMS of a kind of LCP base material switchs preparation method, described LCP base material RFMEMS switch includes switch base material, is positioned at the CPW figure and film micro-bridge 8 that switch on base material, switch base material includes LCP base material 1, back copper foil 2 and layer gold thereon 3, CPW figure includes RF transmission line 5 and is positioned at the ground wire 4 of RF transmission line both sides, specifically includes following steps:
(1) after covering copper LCP substrate 5min～10min with the M6319US cleanout fluid ultrasonic cleaning one side of 50 DEG C～70 DEG C, washing；Again with, after the dilute hydrochloric acid ultrasonic cleaning 0.5min～1.5min of 5%～10%, washing；
(2) the LCP substrate after step (1) being processed covers copper face electrogilding, washing, with isopropanol soaking and washing 5min～10min, dries up with nitrogen.Be placed on 200 DEG C～250 DEG C hot plate upper press cover glass plate baking 60min～120min；
(3) the LCP substrate after step (2) being processed is sent in dry plasma etch machine, with carbon tetrafluoride and oxygen treatments applied substrate without copper face 2min～5min；
(4) the LCP substrate after step (3) being processed is sent in magnetic control platform, without sputtering titanium tungsten golden membranous layer on copper face；
(5) the LCP electroplating substrate gold face spin coating photoresist after step (4) processes, it is placed on 100 DEG C～150 DEG C hot plates and toasts 2min～5min, rigid substrate (rigid substrate can be glass plate, silicon chip and ceramic wafer) that gland surfaces is smooth at rigid substrate upper press cover briquetting, after heated baking 10min～15min, from hot plate, LCP substrate and rigid substrate removed and be cooled to room temperature.Again LCP substrate and rigid substrate are placed on 100 DEG C～150 DEG C hot plates, after gland briquetting heated baking 10min～15min, from hot plate, LCP substrate and rigid substrate are removed and be cooled to room temperature；
(6) the LCP substrate titanium tungsten golden membranous layer face after step (5) being processed carries out plasma treatment, cover in CPW figure the position beyond the bargraphs needing plating to thicken with photoresist, afterwards bargraphs is carried out gold-plated thickening, then carries out process of removing photoresist.With photoresist all lines positions of CPW figure are covered, afterwards position beyond CPW figure is carried out wet etching, then carry out process of removing photoresist, obtain CPW figure；
(7) the LCP substrate after step (6) being processed is sent in dry plasma etch machine, with argon, CPW figure is carried out dry process；LCP substrate surface growth layer of silicon dioxide after treatment again；
(8) the LCP substrate surface after step (7) processes, with photoresist the silicon dioxide being in below film micro-bridge is covered, and the position beyond covering is carried out wet etching, then carry out process of removing photoresist, RF transmission line is formed silicon dioxide insulating layer 6；
(9) on the LCP substrate after step (8) processes, with sol evenning machine spin coating photoresist, left at room temperature 30min～60min；Afterwards front baking, exposure, development, produce the photoetching offset plate figure that bridge pier 7 position is exposed；Afterwards LCP substrate is placed on the hot plate of 100 DEG C～150 DEG C, toasts 20min～40min, obtain sacrifice layer；Again LCP substrate is sent in magnetic control platform, at whole surface sputtering golden membranous layer；
(10) the LCP substrate after step (9) being processed takes out, with photoresist the position beyond film micro-bridge is covered, again film micro-bridge being carried out gold-plated thickening, the photoresist this step covered afterwards carries out remove photoresist process and wet etching treatment, obtains film micro-bridge；
(11) the LCP substrate after step (10) being processed is put in the liquid that removes photoresist and is soaked, and carries out the supersound process of 1min～2min in immersion process；Take out LCP substrate, place into soaking and washing 3 times～5 times in hot deionized water；Take out LCP substrate, put in isopropanol and soak, immersion process carries out the supersound process of 1min；Take out LCP substrate, put in the chamber of critical point drying instrument, carry out carbon dioxide supercritical fluid drying, complete sacrifice layer release；
Complete the preparation of LCP base material RFMEMS switch.
In embodiment, we in aforementioned manners application and preparation in the RFMEMS switch of≤20GHz, and the correlated performance of exemplar is tested, performance indications are: in≤20GHz frequency range, insertion loss≤0.2dB, return loss≤-20dB, isolation >=20dB, driving voltage 30V～50V.
Claims (5)
1. the RFMEMS of a LCP base material switchs preparation method, it is characterised in that comprise the following steps:
(1) the LCP substrate that one side covers copper is carried out processing；
(2) the LCP substrate after step (1) being processed covers copper face and carries out electrogilding；
(3) the LCP substrate after step (2) being processed is sent in dry plasma etch machine, with carbon tetrafluoride and oxygen without copper face, LCP substrate is carried out dry process；
(4) the LCP substrate after step (3) being processed is sent in magnetic control platform, without sputtering titanium tungsten golden membranous layer on copper face；
(5) the LCP substrate after step (4) being processed takes out, and with photoresist the rigid substrate of the gilding of LCP substrate Yu surfacing is carried out gapless compound；
(6), on the titanium tungsten golden membranous layer of the LCP substrate after step (5) processes, CPW figure is prepared；
(7) the LCP substrate after step (6) being processed is sent in dry plasma etch machine, with argon, CPW figure is carried out dry process；LCP substrate surface growth layer of silicon dioxide after treatment again；
(8) the LCP substrate surface after step (7) processes, with photoresist the silicon dioxide being in below film micro-bridge is covered, and the position beyond covering is carried out wet etching, then carry out process of removing photoresist, RF transmission line is formed silicon dioxide insulating layer；
(9) on the LCP substrate after step (8) processes, with photoresist all sites being in beyond film micro-bridge bridge pier is covered, send in magnetic control platform, sputter golden membranous layer；
(10) the LCP substrate after step (9) being processed takes out, with photoresist the position beyond film micro-bridge is covered, again film micro-bridge being carried out gold-plated thickening, the photoresist this step covered afterwards carries out remove photoresist process and wet etching treatment, obtains film micro-bridge；
(11) the LCP substrate after step (10) being processed, carries out sacrifice layer release, and sacrifice layer includes the photoresist in step (5) and the photoresist in step (9)；
Complete the preparation of LCP base material RFMEMS switch.
2. the RFMEMS of a kind of LCP base material according to claim 1 switchs preparation method, it is characterized in that: described in step (5), with photoresist the rigid substrate of the gilding of LCP substrate Yu surfacing is carried out gapless compound, specifically include following steps:
(501) the LCP electroplating substrate gold face spin coating photoresist processed in step (5), is placed on 100 DEG C～150 DEG C hot plates and toasts 2min～5min；
(502) on the LCP substrate after step (501) processes, gland rigid substrate after rigid substrate upper press cover briquetting, heated baking 10min～15min, from hot plate, LCP substrate and rigid substrate removed and be cooled to room temperature；
(503) LCP substrate and rigid substrate after step (502) being processed are again placed on 100 DEG C～150 DEG C hot plates, after gland briquetting heated baking 10min～15min, LCP substrate and rigid substrate are removed and be cooled to room temperature from hot plate.
3. the RFMEMS of a kind of LCP base material according to claim 1 switchs preparation method, it is characterised in that: the cleaning treatment described in step (1) comprises the following steps:
(101) cover copper LCP substrate 5min～10min with the M6319US cleanout fluid ultrasonic cleaning one side of 50 DEG C～70 DEG C, wash afterwards；
(102) the LCP substrate (101) processed is with the dilute hydrochloric acid ultrasonic cleaning 0.5min～1.5min of 5%～10%, washes afterwards.
4. the RFMEMS of a kind of LCP base material according to claim 1 switchs preparation method, it is characterised in that: the LCP substrate described in step (2) covers copper face electrogilding and comprises the following steps:
(201) the LCP substrate after step (1) being processed covers copper face electrogilding, washes after plating；
(202) the LCP substrate isopropanol soaking and washing 5min～10min after step (201) being processed, nitrogen dries up afterwards；
(203) the LCP substrate after step (202) being processed is placed in the hot plate upper press cover glass plate baking 60min～120min of 200 DEG C～250 DEG C.
5. the RFMEMS of a kind of LCP base material according to claim 1 switchs preparation method, it is characterised in that: the rigid substrate described in step (5) includes glass plate, silicon chip and ceramic wafer.
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| CN201610148997.4A CN105762019B (en) | 2016-03-16 | 2016-03-16 | A kind of RF mems switch preparation methods of LCP base materials |
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| CN201610148997.4A CN105762019B (en) | 2016-03-16 | 2016-03-16 | A kind of RF mems switch preparation methods of LCP base materials |
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Cited By (3)
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| CN106486427A (en) * | 2016-11-21 | 2017-03-08 | 成都嘉纳海威科技有限责任公司 | A kind of package casing based on LCP substrate and preparation method |
| CN107324273A (en) * | 2017-06-12 | 2017-11-07 | 中国电子科技集团公司第五十四研究所 | A kind of method for packing of the MEMS based on LCP multiple-level stack technologies |
| CN108133869A (en) * | 2017-12-25 | 2018-06-08 | 苏州希美微纳系统有限公司 | Prepare the method and micro electro-mechanical system switch of high-performance radio-frequency micro electro-mechanical system switch |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106486427A (en) * | 2016-11-21 | 2017-03-08 | 成都嘉纳海威科技有限责任公司 | A kind of package casing based on LCP substrate and preparation method |
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| CN108133869A (en) * | 2017-12-25 | 2018-06-08 | 苏州希美微纳系统有限公司 | Prepare the method and micro electro-mechanical system switch of high-performance radio-frequency micro electro-mechanical system switch |
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| CN105762019B (en) | 2018-01-30 |
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