CN104627956B - A kind of preparation method of RF MEMS device double-tiered arch dam sacrificial layer - Google Patents
A kind of preparation method of RF MEMS device double-tiered arch dam sacrificial layer Download PDFInfo
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- CN104627956B CN104627956B CN201510065208.6A CN201510065208A CN104627956B CN 104627956 B CN104627956 B CN 104627956B CN 201510065208 A CN201510065208 A CN 201510065208A CN 104627956 B CN104627956 B CN 104627956B
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Abstract
The present invention relates to RF MEMS device manufacturing fields, disclose a kind of preparation method of RF MEMS device double-tiered arch dam sacrificial layer, mainly include with negtive photoresist carry out the preparation of the first sacrificial layer, the solidification of the first sacrificial layer, the preparation for carrying out with positive photoresist the second sacrificial layer, the second sacrificial layer 4 processing steps of solidification；Wherein, in the second sacrificial layer preparation process, the preparation of contact-carrying suspension structure sacrificial layer can be realized with the mask plate exposure with photoetching hole.The present invention makees sacrificial layer using double-tiered arch dam, and preparation process is simple, flattening effect is good, the sacrificial layer for preparing contact-carrying suspension structure that is easy to discharge, and can be convenient.
Description
Technical field
The present invention relates to RF MEMS device manufacturing field, in particular to a kind of RF MEMS device double-tiered arch dam sacrificial layer
Preparation method.
Background technique
RF MEMS device have it is small in size, light-weight, low in energy consumption, integrated level is high, steady performance, communicating, leading
There is very extensive application prospect in the fields such as boat, aerospace, biomedicine.RF MEMS device has the movable knot of suspension mostly
Structure, the formation of traditional suspension structure often use surface sacrificial process, i.e., cover after the completion of RF MEMS device fabric
Then lid sacrificial layer deposits metallic film on sacrificial layer, form suspension by the sacrificial layer under release metallic film later
Micro-structure；Wherein the degree of planarization of sacrificial layer determines the planarization of its suspension structure above, and then to the driving of device electricity
The performances such as pressure, isolation, reliability have larger impact.Therefore, the preparation of sacrificial layer is in RF MEMS device process
A key technology.
The inorganic material such as common metal, silica, polysilicon or polyimides prepare sacrificial layer both at home and abroad at present.But gold
Belong to and be used as sacrificial layer, since the stress of metallic diaphragm easily leads to suspension structure buckling deformation；The inorganic material such as silica, polysilicon
Requirement height, technological temperature height to equipment, manufacturing procedure are complicated；The solidification temperature of polyimides is high, the time is long, and is difficult to
It removes.In this context, we have invented a kind of preparation method of RF MEMS device double-tiered arch dam sacrificial layer, Double-layer photoetching is used
Glue does sacrificial layer, and preparation process is simple, flattening effect is good, and can be discharged using the method for dry etching such as ashing, from
And adhesion effect is avoided, improve the yield rate of RF MEMS device.
Summary of the invention
The purpose of the present invention is to provide a kind of simple process, flattening effect is good and is easy to the RF MEMS device of release
The preparation method of double-tiered arch dam sacrificial layer.
The preparation method of RF MEMS device double-tiered arch dam sacrificial layer of the invention, it is characterised in that the following steps are included:
Step 1, it the preparation of the first sacrificial layer: is revolved first with negtive photoresist on the RF MEMS exemplar with fabric
Painting and front baking form negtive photoresist film on RF MEMS exemplar；The thickness of negtive photoresist film is less than the height of fabric；It is sacrificed to first
Negtive photoresist film in layer region is exposed, and is then removed the negtive photoresist film outside the first sacrifice layer region by developing；
Step 2, the solidification of the first sacrificial layer: by step 1 treated 130 DEG C~140 DEG C of RF MEMS exemplar baking
10min~20min；
Step 3, the preparation of the second sacrificial layer: carried out on step 2 treated RF MEMS exemplar with positive photoresist spin coating and before
It dries, forms positive glue film on the RF MEMS exemplar with the first sacrificial layer；The thickness of positive glue film is sacrificial greater than fabric and first
The difference in height of domestic animal layer；Positive glue film outside second sacrifice layer region is exposed, is sacrificed outside layer region by development by second
Positive glue film is removed；
Step 4, the solidification of the second sacrificial layer: by step 3 treated 110 DEG C~130 DEG C of RF MEMS exemplar baking
10min~30min；
Complete the preparation of RF MEMS device double-tiered arch dam sacrificial layer.
Wherein, the RF MEMS exemplar with fabric include RF MEMS exemplar substrate and by sputtering or
Plating mode is produced on the fabric in substrate.
Wherein, the mask plate used in the exposure process of step 3 has photoetching hole.
The present invention is acquired compared with prior art to be had the beneficial effect that
1, relative to the inorganic material such as polyimides and silica, polysilicon, the preparation process of photoetching glue victim layer is simple,
Temperature is low, with subsequent technique good compatibility；
2, the problem of avoiding suspension structure buckling deformation caused by metallic diaphragm stress；
3, double sacrificial layers are better than single sacrificial layer flattening effect；
4, the combined use of positive negtive photoresist solves the problems, such as the colloidal sol between two layers of positive photoresist or two layers of negtive photoresist；
5, what be can be convenient prepares the sacrificial layer of contact-carrying suspension structure, and contact height is easy to control, uniformity with it is consistent
Property is good；
6, photoetching glue victim layer is discharged using the method for dry etching, avoids adhesion effect, RF MEMS can be improved
The yield rate of device.
Detailed description of the invention
Fig. 1 is the schematic diagram of double-tiered arch dam sacrificial layer.
Fig. 2 is the schematic diagram of contact-carrying clamped beam mask plate.
Fig. 3 is the schematic diagram of contact-carrying clamped beam photoetching glue victim layer.
Fig. 4 is the schematic diagram of contact-carrying cantilever beam mask plate.
Fig. 5 is the schematic diagram of contact-carrying cantilever beam photoetching glue victim layer.
Specific embodiment
In the following, in conjunction with attached drawing, the invention will be further described.
A kind of preparation method of RF MEMS device double-tiered arch dam sacrificial layer, it is characterised in that the following steps are included:
Step 1, it the preparation of the first sacrificial layer 2: is carried out first with negtive photoresist on the RF MEMS exemplar with fabric 1
Spin coating and front baking form negtive photoresist film on RF MEMS exemplar；The thickness of negtive photoresist film is less than the height of fabric 1；It is sacrificial to first
Negtive photoresist film in domestic animal layer region is exposed, and is then removed the negtive photoresist film outside the first sacrifice layer region by developing；
The RF MEMS exemplar with fabric 1 include MEMS exemplar substrate 6 and by sputtering or plating side
Formula is produced on the fabric 1 in substrate.
In embodiment, 1 height of fabric of RF MEMS exemplar is 2 μm~3 μm, and negtive photoresist material is NR71-1500PY,
Spin coating and front baking are carried out with negtive photoresist on the RF MEMS exemplar with fabric 1, forms negtive photoresist film on RF MEMS exemplar,
Negtive photoresist film with a thickness of 1.5 μm~2.0 μm；Then with mask plate to first sacrifice layer region in negtive photoresist film be exposed, in
It dries and development, the negtive photoresist film first sacrificed outside layer region removes.By above step, the preparation of the first sacrificial layer 2 is completed, can be with
The difference in height of fabric 1 and the first sacrificial layer 2 in RF MEMS exemplar is reduced to 0.2 μm~0.6 μm.
Step 2, the solidification of the first sacrificial layer: by step 1 treated 130 DEG C~140 DEG C of RF MEMS exemplar baking
10min~20min；
In embodiment, when hot plate reaches 130 DEG C or 140 DEG C of temperature of setting, by step 1 treated RF MEMS sample
Part is placed on hot plate, toasts 10min~20min.
Step 3, the preparation of the second sacrificial layer 3: on step 2 treated RF MEMS exemplar with positive photoresist carry out spin coating and
Front baking forms positive glue film on the RF MEMS exemplar with the first sacrificial layer 2；The thickness of positive glue film is greater than fabric 1 and the
The difference in height of one sacrificial layer 2；Positive glue film outside second sacrifice layer region is exposed, layer region is sacrificed for second by development
Outer positive glue film is removed；
In embodiment, positive glue material is AZ1500, is carried out on the RF MEMS exemplar with the first sacrificial layer 2 with positive photoresist
Spin coating and front baking, positive glue film with a thickness of 0.8 μm~1.2 μm, then with mask plate to second sacrifice layer region outside positive glue film
It is exposed, passes through the positive photoresist removal sacrificed outside layer region by second of developing.By above step, prepared by the second sacrificial layer 3
At sacrificial layer surface planarization is good.
As a further refinement of the present invention, the mask plate used in the exposure process of step 3 has photoetching hole 5.
In embodiment, in the exposure process of step 3, second sacrificial layer 3 is exposed with mask plate shown in Fig. 2,
The sacrificial layer of 4 clamped beam of contact-carrying can be prepared；Second sacrificial layer 3 is exposed with mask plate shown in Fig. 4, can be prepared
The sacrificial layer of 4 cantilever beam of contact-carrying；The thickness of second sacrificial layer is exactly the height of contact；And according to the difference of 4 height of contact,
The thickness and photolithographic parameters of second sacrificial layer 3 are adjusted.By above step, contact-carrying suspension structure sacrificial layer is completed
Preparation, as shown in Figure 3 and Figure 5.
Step 4, the solidification of the second sacrificial layer: by step 3 treated 110 DEG C~130 DEG C of RF MEMS exemplar baking
10min~30min；
In embodiment, when hot plate reaches 110 DEG C, 120 DEG C or 130 DEG C of temperature of setting, by step 3 treated RF
MEMS exemplar is placed on hot plate, toasts 10min~30min.
Complete the preparation of RF MEMS device double-tiered arch dam sacrificial layer.
Claims (2)
1. a kind of preparation method of RF MEMS device double-tiered arch dam sacrificial layer, it is characterised in that the following steps are included:
Step 1, it the preparation of the first sacrificial layer (2): is carried out first with negtive photoresist on the RF MEMS exemplar with fabric (1)
Spin coating and front baking form negtive photoresist film on RF MEMS exemplar；The thickness of negtive photoresist film is less than the height of fabric (1)；To first
The negtive photoresist film sacrificed in layer region is exposed, and is then removed the negtive photoresist film outside the first sacrifice layer region by developing；
Wherein, the RF MEMS exemplar with fabric includes the substrate (6) of RF MEMS exemplar and passes through sputtering or be electroplated
Mode is produced on the fabric (1) in substrate；
Step 2, the solidification of the first sacrificial layer: by step 1 treated 130 DEG C~140 DEG C baking 10min of RF MEMS exemplar~
20min；
Step 3, the preparation of the second sacrificial layer (3): carried out on step 2 treated RF MEMS exemplar with positive photoresist spin coating and before
It dries, forms positive glue film on the RF MEMS exemplar with the first sacrificial layer；The thickness of positive glue film is greater than fabric (1) and the
The difference in height of one sacrificial layer (2)；Positive glue film outside second sacrifice layer region is exposed, by developing the second sacrificial layer area
Overseas positive glue film is removed；
Step 4, the solidification of the second sacrificial layer: by step 3 treated 110 DEG C~130 DEG C baking 10min of RF MEMS exemplar~
30min；
Complete the preparation of RF MEMS device double-tiered arch dam sacrificial layer.
2. a kind of preparation method of RF MEMS device double-tiered arch dam sacrificial layer according to claim 1, feature exist
In: the mask plate used in the exposure process of step 3 has photoetching hole (5).
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| CN105005414B (en) * | 2015-08-03 | 2018-09-14 | 山东华芯富创电子科技有限公司 | Prevent the method and structure to break when touch screen induction layer processing procedure |
| CN109911845A (en) * | 2019-03-07 | 2019-06-21 | 无锡众创未来科技应用有限公司 | A kind of manufacturing method of low-power consumption electrostatic drive formula RF mems switch |
| CN110329988A (en) * | 2019-07-17 | 2019-10-15 | 中国电子科技集团公司第五十四研究所 | A kind of compound sacrificial layer preparation method of RF-MEMS switch |
| CN111517275B (en) * | 2020-05-09 | 2023-06-02 | 中北大学 | Preparation method of practical radio frequency MEMS switch double-layer sacrificial layer |
| CN113104806B (en) * | 2021-03-11 | 2024-05-03 | 中国电子科技集团公司第五十四研究所 | Preparation method of MEMS device composite metal sacrificial layer |
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| JP4292532B2 (en) * | 2002-04-24 | 2009-07-08 | 株式会社沖センサデバイス | Mechanism device manufacturing method, mechanism device, and micro reed switch |
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| US20140268274A1 (en) * | 2013-03-15 | 2014-09-18 | Pixtronix, Inc. | Display Apparatus Incorporating an Elevated Aperture Layer and Methods of Manufacturing the Same |
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