CN104627956A - Preparation method of double-layer optical resist sacrificial layers of RF MEMS device - Google Patents
Preparation method of double-layer optical resist sacrificial layers of RF MEMS device Download PDFInfo
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- CN104627956A CN104627956A CN201510065208.6A CN201510065208A CN104627956A CN 104627956 A CN104627956 A CN 104627956A CN 201510065208 A CN201510065208 A CN 201510065208A CN 104627956 A CN104627956 A CN 104627956A
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Abstract
The invention relates to the field of manufacturing of an RF MEMS device, and discloses a preparation method of double-layer optical resist sacrificial layers of an RF MEMS device. The preparation method mainly comprises the four process steps of preparation of a first sacrificial layer by negative glue, curing of the first sacrificial layer, preparation of a second sacrificial layer by positive glue and curing of the second sacrificial layer; wherein during the preparation process of the second sacrificial layer, the preparation of the sacrificial layer with contact suspension structure is realized by exposing with a mask with photo-etching holes. With double-layer optical resist as sacrificial layers, the preparation process is simple, the flattening effect is good, the release is easy, and the sacrificial layer with contact suspension structure can be prepared conveniently.
Description
Technical field
The present invention relates to RF MEMS and manufacture field, particularly a kind of preparation method of RF MEMS double-tiered arch dam sacrifice layer.
Background technology
RF MEMS has that volume is little, lightweight, low in energy consumption, integrated level is high, steady performance, has application prospect very widely in fields such as communication, navigation, Aero-Space, biomedicines.RF MEMS has suspension movable structure mostly, the formation of traditional suspension structure often adopts surface sacrificial process, namely after RF MEMS fabric completes, sacrifice layer is covered, then depositing metal film on sacrifice layer, forms by the sacrifice layer under release metallic film the micro-structural suspended afterwards; Wherein the degree of planarization of sacrifice layer determines the planarization of suspension structure above it, and then has considerable influence to the performance such as driving voltage, isolation, reliability of device.Therefore, the preparation of sacrifice layer be in RF MEMS process a key technology.
The inorganic material such as current common metal, silica, polysilicon both at home and abroad, or sacrifice layer prepared by polyimides.But metal is as sacrifice layer, because the stress of metallic diaphragm easily causes suspension structure buckling deformation; The requirement of the inorganic material such as silica, polysilicon to equipment is high, technological temperature is high, manufacturing procedure is complicated; The solidification temperature of polyimides is high, the time is long, and is difficult to remove.In this context, we have invented a kind of preparation method of RF MEMS double-tiered arch dam sacrifice layer, sacrifice layer is done with double-tiered arch dam, its preparation technology is simple, flattening effect good, and dry etching such as the method for ashing can be adopted to discharge, thus avoid adhesion effect, improve the yield rate of RF MEMS.
Summary of the invention
The object of the present invention is to provide that a kind of technique is simple, flattening effect good and be easy to the preparation method of the RF MEMS double-tiered arch dam sacrifice layer discharged.
The preparation method of RF MEMS double-tiered arch dam sacrifice layer of the present invention, is characterized in that comprising the following steps:
Step 1, the preparation of the first sacrifice layer: first carry out spin coating and front baking with negative glue on the RF MEMS exemplar with fabric, RF MEMS exemplar is formed negative glued membrane; The thickness of negative glued membrane is less than the height of fabric; Negative glued membrane in first sacrifice layer region is exposed, then by development, the extra-regional negative glued membrane of the first sacrifice layer is removed;
Step 2, the solidification of the first sacrifice layer: the RF MEMS exemplar after step 1 is processed 130 DEG C ~ 140 DEG C baking 10min ~ 20min;
Step 3, the preparation of the second sacrifice layer: the RF MEMS exemplar after step 2 processes carries out spin coating and front baking with positive glue, the RF MEMS exemplar with the first sacrifice layer forms positive glued membrane; The thickness of positive glued membrane is greater than the difference in height of fabric and the first sacrifice layer; The extra-regional positive glued membrane of second sacrifice layer is exposed, by development, the extra-regional positive glued membrane of the second sacrifice layer is removed;
Step 4, the solidification of the second sacrifice layer: the RF MEMS exemplar after step 3 is processed 110 DEG C ~ 130 DEG C baking 10min ~ 30min;
Complete the preparation of RF MEMS double-tiered arch dam sacrifice layer.
Wherein, the described RF MEMS exemplar with fabric comprises the substrate of RF MEMS exemplar and is produced on suprabasil fabric by sputtering or plating mode.
Wherein, the mask plate adopted in the exposure process of step 3 is with photoetching hole.
Beneficial effect acquired by the present invention is compared with prior art:
1, relative to polyimides and the inorganic material such as silica, polysilicon, the preparation technology of photoetching glue victim layer is simple, temperature is low, good with subsequent technique compatibility;
2, the problem of the suspension structure buckling deformation that metallic diaphragm stress causes is avoided;
3, two sacrifice layer is better than single sacrifice layer flattening effect;
4, being combined of positive and negative glue, solves the colloidal sol problem between two-layer positive glue or two-layer negative glue;
5, the sacrifice layer of contact-carrying suspension structure can be prepared easily, and contact height is easy to control, uniformity and uniformity good;
6, photoetching glue victim layer adopts the method for dry etching to discharge, and avoids adhesion effect, can improve the yield rate of RF MEMS.
Accompanying drawing explanation
fig. 1it is the signal of double-tiered arch dam sacrifice layer
figure.
fig. 2it is the signal of contact-carrying clamped beam mask plate
figure.
fig. 3it is the signal of contact-carrying clamped beam photoetching glue victim layer
figure.
fig. 4it is the signal of contact-carrying cantilever beam mask plate
figure.
fig. 5it is the signal of contact-carrying cantilever beam photoetching glue victim layer
figure.
Detailed description of the invention
Below, in conjunction with
accompanying drawingthe invention will be further described.
A preparation method for RF MEMS double-tiered arch dam sacrifice layer, is characterized in that comprising the following steps:
Step 1, the preparation of the first sacrifice layer 2: first carry out spin coating and front baking with negative glue on the RF MEMS exemplar with fabric 1, RF MEMS exemplar is formed negative glued membrane; The thickness of negative glued membrane is less than the height of fabric 1; Negative glued membrane in first sacrifice layer region is exposed, then by development, the extra-regional negative glued membrane of the first sacrifice layer is removed;
The described RF MEMS exemplar with fabric 1 comprises the substrate 6 of MEMS exemplar and is produced on suprabasil fabric 1 by sputtering or plating mode.
In embodiment, the fabric 1 of RF MEMS exemplar is highly 2 μm ~ 3 μm, and negative glue material is NR71-1500PY, and the RF MEMS exemplar with fabric 1 carries out spin coating and front baking with negative glue, RF MEMS exemplar is formed negative glued membrane, and the thickness of negative glued membrane is 1.5 μm ~ 2.0 μm; Then with mask plate the negative glued membrane in the first sacrifice layer region is exposed, middle baking and development, the extra-regional negative glued membrane of the first sacrifice layer is removed.Through above step, prepared by the first sacrifice layer 2, the difference in height of fabric in RF MEMS exemplar 1 and the first sacrifice layer 2 can be reduced to 0.2 μm ~ 0.6 μm.
Step 2, the solidification of the first sacrifice layer: the RF MEMS exemplar after step 1 is processed 130 DEG C ~ 140 DEG C baking 10min ~ 20min;
In embodiment, when hot plate reaches the temperature 130 DEG C of setting or 140 DEG C, the RF MEMS exemplar after step 1 being processed is placed on hot plate, baking 10min ~ 20min.
Step 3, the preparation of the second sacrifice layer 3: the RF MEMS exemplar after step 2 processes carries out spin coating and front baking with positive glue, the RF MEMS exemplar with the first sacrifice layer 2 forms positive glued membrane; The thickness of positive glued membrane is greater than the difference in height of fabric 1 and the first sacrifice layer 2; The extra-regional positive glued membrane of second sacrifice layer is exposed, by development, the extra-regional positive glued membrane of the second sacrifice layer is removed;
In embodiment, positive glue material is AZ1500, the RF MEMS exemplar with the first sacrifice layer 2 carries out spin coating and front baking with positive glue, the thickness of positive glued membrane is 0.8 μm ~ 1.2 μm, then with mask plate, the extra-regional positive glued membrane of the second sacrifice layer is exposed, by development, the extra-regional positive glue of the second sacrifice layer is removed.Through above step, prepared by the second sacrifice layer 3, sacrificial layer surface planarization is good.
As to further improvement of the present invention, the mask plate adopted in the exposure process of step 3 is with photoetching hole 5.
In embodiment, in the exposure process of step 3, use
fig. 2shown mask plate exposes the second sacrifice layer 3, can prepare the sacrifice layer of contact-carrying 4 clamped beam; With
fig. 4shown mask plate exposes the second sacrifice layer 3, can prepare the sacrifice layer of contact-carrying 4 cantilever beam; The thickness of the second sacrifice layer is exactly the height of contact; And according to the difference of contact 4 height, the thickness of the second sacrifice layer 3 and photolithographic parameters are adjusted.Through above step, complete the preparation of contact-carrying suspension structure sacrifice layer,
as Fig. 3with
fig. 5shown in.
Step 4, the solidification of the second sacrifice layer: the RF MEMS exemplar after step 3 is processed 110 DEG C ~ 130 DEG C baking 10min ~ 30min;
In embodiment, until hot plate reach setting temperature 110 DEG C, 120 DEG C or 130 DEG C time, the RF MEMS exemplar after step 3 being processed is placed on hot plate, baking 10min ~ 30min.
Complete the preparation of RF MEMS double-tiered arch dam sacrifice layer.
Claims (3)
1. a preparation method for RF MEMS double-tiered arch dam sacrifice layer, is characterized in that comprising the following steps:
Step 1, the preparation of the first sacrifice layer (2): first carry out spin coating and front baking with negative glue on the RF MEMS exemplar with fabric (1), RF MEMS exemplar is formed negative glued membrane; The thickness of negative glued membrane is less than the height of fabric (1); Negative glued membrane in first sacrifice layer region is exposed, then by development, the extra-regional negative glued membrane of the first sacrifice layer is removed;
Step 2, the solidification of the first sacrifice layer: the RF MEMS exemplar after step 1 is processed 130 DEG C ~ 140 DEG C baking 10min ~ 20min;
Step 3, the preparation of the second sacrifice layer (3): the RF MEMS exemplar after step 2 processes carries out spin coating and front baking with positive glue, the RF MEMS exemplar with the first sacrifice layer forms positive glued membrane; The thickness of positive glued membrane is greater than the difference in height of fabric (1) and the first sacrifice layer (2); The extra-regional positive glued membrane of second sacrifice layer is exposed, by development, the extra-regional positive glued membrane of the second sacrifice layer is removed;
Step 4, the solidification of the second sacrifice layer: the RF MEMS exemplar after step 3 is processed 110 DEG C ~ 130 DEG C baking 10min ~ 30min;
Complete the preparation of RF MEMS double-tiered arch dam sacrifice layer.
2. the preparation method of a kind of RF MEMS double-tiered arch dam sacrifice layer according to claim 1, is characterized in that: the described RF MEMS exemplar with fabric comprises the substrate (6) of RF MEMS exemplar and is produced on suprabasil fabric (1) by sputtering or plating mode.
3. the preparation method of a kind of RF MEMS double-tiered arch dam sacrifice layer according to claim 1, is characterized in that: the mask plate adopted in the exposure process of step 3 is with photoetching hole (5).
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| CN105005414A (en) * | 2015-08-03 | 2015-10-28 | 山东华芯富创电子科技有限公司 | Method and structure for preventing wire breakage of touch panel sensor layer in preparation |
| CN109911845A (en) * | 2019-03-07 | 2019-06-21 | 无锡众创未来科技应用有限公司 | A kind of manufacturing method of low-power consumption electrostatic drive formula RF mems switch |
| CN110329988A (en) * | 2019-07-17 | 2019-10-15 | 中国电子科技集团公司第五十四研究所 | A kind of compound sacrificial layer preparation method of RF-MEMS switch |
| CN111517275A (en) * | 2020-05-09 | 2020-08-11 | 中北大学 | Preparation method of practical radio frequency MEMS switch double-layer sacrificial layer |
| CN113104806A (en) * | 2021-03-11 | 2021-07-13 | 中国电子科技集团公司第五十四研究所 | Preparation method of composite metal sacrificial layer of MEMS device |
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| CN113104806A (en) * | 2021-03-11 | 2021-07-13 | 中国电子科技集团公司第五十四研究所 | Preparation method of composite metal sacrificial layer of MEMS device |
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