US20170164128A1 - Method for manufacturing microphone chip - Google Patents
Method for manufacturing microphone chip Download PDFInfo
- Publication number
- US20170164128A1 US20170164128A1 US15/297,516 US201615297516A US2017164128A1 US 20170164128 A1 US20170164128 A1 US 20170164128A1 US 201615297516 A US201615297516 A US 201615297516A US 2017164128 A1 US2017164128 A1 US 2017164128A1
- Authority
- US
- United States
- Prior art keywords
- underlay
- oxide layer
- layer
- microphone chip
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/16—Mounting or tensioning of diaphragms or cones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2207/00—Details of diaphragms or cones for electromechanical transducers or their suspension covered by H04R7/00 but not provided for in H04R7/00 or in H04R2307/00
- H04R2207/021—Diaphragm extensions, not necessarily integrally formed, e.g. skirts, rims, flanges
Definitions
- the present invention relates to a method for manufacturing a microphone, and more particularly to a method for manufacturing a chip of a MEMS microphone.
- FIG. 1 is an illustration indicating a Step I of a method for manufacturing a microphone chip in accordance with an exemplary embodiment of the present disclosure.
- FIG. 2 is an illustration indicating a Step II of the method for manufacturing the microphone chip.
- FIG. 3 is an illustration indicating a Step III of the method for manufacturing the microphone chip.
- FIG. 4 is an illustration indicating a Step IV of the method for manufacturing the microphone chip.
- FIG. 5 is an illustration indicating a Step V of the method for manufacturing the microphone chip.
- FIG. 6 is an illustration indicating a Step VI of the method for manufacturing the microphone chip.
- FIG. 7 is an illustration indicating a Step VII of the method for manufacturing the microphone chip.
- FIG. 8 is an illustration indicating a Step VIII of the method for manufacturing the microphone chip.
- FIG. 9 is an illustration indicating a Step IX of the method for manufacturing the microphone chip.
- FIG. 10 is an illustration indicating a Step X of the method for manufacturing the microphone chip.
- FIG. 11 is an illustration indicating a Step XI of the method for manufacturing the microphone chip.
- FIG. 12 is an illustration indicating a Step XII of the method for manufacturing the microphone chip.
- a microphone chip related to an exemplary embodiment of the present disclosure includes a diaphragm 300 , a back plate 700 with a certain distance away from the diaphragm 300 , a bonding layer 400 clamped between the diaphragm 300 and the back plate 700 , and an anti-stick protrusion 500 formed on the back plate 700 .
- a method for manufacturing the microphone chip includes the following steps:
- the component 14 can be polycrystalline silicon etc.
- Step IV (S4) as shown in FIG. 4 , etching the tetraethyl orthosilicate oxide layer 15 on the first surface 11 and exposing the component layer 14 , while removing the tetraethyl orthosilicate oxide layer 15 by the side of the second surface 12 .
- the scope of ambient temperature is 22 ⁇ 3° C.
- Step XI (S11): as shown in FIG. 11 , etching the oxide layer 22 and substrate 21 of the fourth surface 212 of the second underlay 2 for forming the back cavity 701 corresponding to the back plate 700 ;
- Step XII (S12): as shown in FIG. 12 , further etching the first underlay 1 to release the diaphragm 300 and then obtain the microphone chip. In this embodiment, it also includes: depositing the conduction layers on the first underlay 1 and the second underlay 2 then etching this conduction layers to form the conduction solder pad 600 .
- the composite diaphragm structure has many preheating intervals that can be used for adjusting the stress of the component layer by aiming at different product; the manufacturing method doesn't need additional plasma processing procedure, in order to reduce the processing steps.
Abstract
Description
- The present invention relates to a method for manufacturing a microphone, and more particularly to a method for manufacturing a chip of a MEMS microphone.
- So far, in all the methods of manufacturing the microphone based on the semi-conductor material, polycrystalline silicon is deposited on the substrate to form the diaphragm and back plate, due to the deposit of multi-layer structure, the processes including the high temperature bonding etc. make it hard to control the stress of the diaphragm and back plate, it is very hard to improve its sensitivity and consistency.
- Therefore, it is necessary to provide an improved method for a microphone chip to overcome above disadvantage.
- Many aspects of the embodiment can be better understood with reference to the following drawings. The components in the drawings are not necessarily drawn to scale, the emphasis instead being placed upon clearly illustrating the principles of the present disclosure. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the several views.
-
FIG. 1 is an illustration indicating a Step I of a method for manufacturing a microphone chip in accordance with an exemplary embodiment of the present disclosure. -
FIG. 2 is an illustration indicating a Step II of the method for manufacturing the microphone chip. -
FIG. 3 is an illustration indicating a Step III of the method for manufacturing the microphone chip. -
FIG. 4 is an illustration indicating a Step IV of the method for manufacturing the microphone chip. -
FIG. 5 is an illustration indicating a Step V of the method for manufacturing the microphone chip. -
FIG. 6 is an illustration indicating a Step VI of the method for manufacturing the microphone chip. -
FIG. 7 is an illustration indicating a Step VII of the method for manufacturing the microphone chip. -
FIG. 8 is an illustration indicating a Step VIII of the method for manufacturing the microphone chip. -
FIG. 9 is an illustration indicating a Step IX of the method for manufacturing the microphone chip. -
FIG. 10 is an illustration indicating a Step X of the method for manufacturing the microphone chip. -
FIG. 11 is an illustration indicating a Step XI of the method for manufacturing the microphone chip. -
FIG. 12 is an illustration indicating a Step XII of the method for manufacturing the microphone chip. - The present invention will hereinafter be described in detail with reference to an exemplary embodiment. To make the technical problems to be solved, technical solutions and beneficial effects of present disclosure more apparent, the present disclosure is described in further detail together with the figures and the embodiment. It should be understood the specific embodiment described hereby is only to explain this disclosure, not intended to limit this disclosure.
- Referring to
FIG. 10 , a microphone chip related to an exemplary embodiment of the present disclosure includes adiaphragm 300, aback plate 700 with a certain distance away from thediaphragm 300, abonding layer 400 clamped between thediaphragm 300 and theback plate 700, and ananti-stick protrusion 500 formed on theback plate 700. - A method for manufacturing the microphone chip includes the following steps:
- Step I (S1): as shown in
FIG. 1 , providing afirst underlay 1 including afirst surface 11 and an oppositesecond surface 12, and aninsulating oxide layers 13 deposited on thefirst surface 11 and thesecond surface 12, wherein, theinsulating oxide layer 13 may comprises silicon oxide; - Step II (S2): as shown in
FIG. 2 , a plurality ofcomponent layers 14 is deposited on theinsulating oxide layers 13 of thefirst surface 11 and thesecond surface 12, and thecomponent layer 14 is used for molding the component structure, e.g. thediaphragm 300. In this embodiment, thecomponent 14 can be polycrystalline silicon etc. - Step III (S3): As shown in
FIG. 3 , a tetraethylorthosilicate oxide layer 15 is deposited on thecomponent layers 14 of thefirst surface 11 and thesecond surface 12. Then, passivation finish is completed for thefirst surface 11 of thefirst underlay 1 with multi-layer structure. Therefore, the tetraethylorthosilicate oxide layers 15 are deposited at both sides of thefirst underlay 1 is to protect thecomponent layer 14 in the process of subsequent passivation finish. In this embodiment, the tetraethylorthosilicate oxide layer 15 can be welded with other oxide layer under ambient temperature. - Step IV (S4): as shown in
FIG. 4 , etching the tetraethylorthosilicate oxide layer 15 on thefirst surface 11 and exposing thecomponent layer 14, while removing the tetraethylorthosilicate oxide layer 15 by the side of thesecond surface 12. - Step V (S5): as shown in
FIG. 5 , patterning theinsulating oxide layer 13,component layer 14 and tetraethylorthosilicate oxide layer 15 deposited on thefirst surface 11 of thefirst underlay 1 in turn, and keeping part of tetraethylorthosilicate oxide layer 15 as the bonding layer. - Step VI (S6): as shown in
FIG. 6 , providing a second underlay 2, and the second underlay 2 is SOI underlay, including asubstrates 21 with athird surface 211 and afourth surface 212 opposite to thethird surface 211, anoxide layer 22 deposited on thethird surface 211 of thesubstrate 21, and amonocrystalline silicon layer 23 deposited on theoxide layer 22. - Step VII (S7): as shown in
FIG. 7 , depositing theoxide layers 22 on thefourth surface 212 of thesubstrate 21 and the surface of themonocrystalline silicon layer 23. - Step VIII (S8): as shown in
FIG. 8 , etching theoxide layer 22 on the surface of themonocrystalline silicon layer 23; continuing to pattern theetched oxide layer 22 with the photoetching technology, and making it formanti-stick protrusion 500 with many intervals on the surface of themonocrystalline silicon layer 23, and these bulges are used for preventing the bonding between the back plate and the diaphragm in the subsequent procedures. - Step IX (S9): as shown in
FIG. 9 , etching for generating acoustic holes 231 in themonocrystalline silicon layer 23 in order to release theback plate 700. - Step X (S10): as shown in
FIG. 10 , conducting passivation finish to thefirst surface 11 of thefirst underlay 1 and thethird surface 211 of the second underlay 2, and then cleaning thefirst surface 11 and thethird surface 211 with the acid solution including the sulphuric acid and hydrofluoric acid etc.; aligning thefirst surface 11 of thefirst underlay 1 and thethird surface 211 of the second underlay 2, and making the tetraethylorthosilicate oxide layer 15 on thefirst surface 11 of thefirst underlay 1 contact with theoxide layer 22 of thethird surface 211 of the second underlay 2 mutually, and combining the tetraethylorthosilicate oxide layer 15 and theoxide layer 22 to form thebonding layer 400 by welding under the ambient temperature. The scope of ambient temperature is 22±3° C. Annealing thefirst underlay 1 and the second underlay 2 that are combined together under low temperature, and the annealing temperature is kept between 700° C.˜900° C. This method can strengthen the bonding of both, while not generating much stress from the layer structures at both sides. Then, grinding thefirst underlay 1, and removing thecomponent layer 14 and insulatingoxide layer 13 from thesecond surface 12 of thefirst underlay 1. - Step XI (S11): as shown in
FIG. 11 , etching theoxide layer 22 andsubstrate 21 of thefourth surface 212 of the second underlay 2 for forming theback cavity 701 corresponding to theback plate 700; - Step XII (S12): as shown in
FIG. 12 , further etching thefirst underlay 1 to release thediaphragm 300 and then obtain the microphone chip. In this embodiment, it also includes: depositing the conduction layers on thefirst underlay 1 and the second underlay 2 then etching this conduction layers to form theconduction solder pad 600. - In this embodiment, it combines the tetraethyl orthosilicate oxide layer and the oxide layer with the oxide layer of the second underlay by welding under ambient temperature, in order to maintain the inherent stress from the component layer of the microphone chip in the similar stress area, meanwhile, it can also reduce the impact to the component layer from the externally thermal stress. In addition, the composite diaphragm structure has many preheating intervals that can be used for adjusting the stress of the component layer by aiming at different product; the manufacturing method doesn't need additional plasma processing procedure, in order to reduce the processing steps.
- It is to be understood, however, that even though numerous characteristics and advantages of the present exemplary embodiment have been set forth in the foregoing description, together with details of the structures and functions of the embodiment, the disclosure is illustrative only, and changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the invention to the full extent indicated by the broad general meaning of the terms where the appended claims are expressed.
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510875602.6 | 2015-12-03 | ||
CN201510875602 | 2015-12-03 | ||
CN201510875602.6A CN105392093B (en) | 2015-12-03 | 2015-12-03 | The manufacturing method of microphone chip |
Publications (2)
Publication Number | Publication Date |
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US20170164128A1 true US20170164128A1 (en) | 2017-06-08 |
US9681244B1 US9681244B1 (en) | 2017-06-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US15/297,516 Active US9681244B1 (en) | 2015-12-03 | 2016-10-19 | Method for manufacturing microphone chip |
Country Status (3)
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US (1) | US9681244B1 (en) |
JP (1) | JP6211661B2 (en) |
CN (1) | CN105392093B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106878912A (en) * | 2017-03-03 | 2017-06-20 | 瑞声科技(新加坡)有限公司 | The method of the oxide layer mat surface planarization of Electret Condencer Microphone semi-finished product |
CN117376796B (en) * | 2023-12-08 | 2024-02-06 | 瑞声光电科技(常州)有限公司 | Method for preparing micro electromechanical microphone |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050005421A1 (en) * | 2002-09-13 | 2005-01-13 | Knowles Electronics, Llc | High performance silicon condenser microphone with perforated single crystal silicon backplate |
US20140145276A1 (en) * | 2010-02-16 | 2014-05-29 | Epcos Ag | Mems microphone and method for manufacture |
US20150061048A1 (en) * | 2013-08-27 | 2015-03-05 | Infineon Technologies Ag | Packaged MEMS Device |
US20160221822A1 (en) * | 2015-02-03 | 2016-08-04 | Infineon Technologies Ag | System and Method for an Integrated Transducer and Temperature Sensor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR970052024A (en) * | 1995-12-30 | 1997-07-29 | 김주용 | SOH eye substrate manufacturing method |
KR20080023313A (en) * | 2005-06-30 | 2008-03-13 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | A method of manufacturing a mems element |
CN101959117B (en) * | 2010-04-19 | 2013-08-07 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of microphone |
WO2012170025A1 (en) * | 2011-06-09 | 2012-12-13 | Hewlett-Packard Development Company, L.P. | Regulating power consumption of a mass storage system |
CN104053082B (en) * | 2013-03-14 | 2017-12-19 | 台湾积体电路制造股份有限公司 | The structures and methods of integrated microphone |
WO2014159552A1 (en) * | 2013-03-14 | 2014-10-02 | Robert Bosch Gmbh | Mems acoustic transducer with silicon nitride backplate and silicon sacrificial layer |
WO2014179721A1 (en) * | 2013-05-02 | 2014-11-06 | Robert Bosch Gmbh | Monolithic cmos-mems microphones and method of manufacturing |
RU2639612C1 (en) * | 2014-01-22 | 2017-12-21 | Хуавей Текнолоджиз Ко., Лтд. | Method of producing "silicon on insulator" substrate and "silicon on insulator" substrate |
-
2015
- 2015-12-03 CN CN201510875602.6A patent/CN105392093B/en not_active Expired - Fee Related
-
2016
- 2016-09-02 JP JP2016171564A patent/JP6211661B2/en not_active Expired - Fee Related
- 2016-10-19 US US15/297,516 patent/US9681244B1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050005421A1 (en) * | 2002-09-13 | 2005-01-13 | Knowles Electronics, Llc | High performance silicon condenser microphone with perforated single crystal silicon backplate |
US20140145276A1 (en) * | 2010-02-16 | 2014-05-29 | Epcos Ag | Mems microphone and method for manufacture |
US20150061048A1 (en) * | 2013-08-27 | 2015-03-05 | Infineon Technologies Ag | Packaged MEMS Device |
US20160221822A1 (en) * | 2015-02-03 | 2016-08-04 | Infineon Technologies Ag | System and Method for an Integrated Transducer and Temperature Sensor |
Also Published As
Publication number | Publication date |
---|---|
US9681244B1 (en) | 2017-06-13 |
JP2017103749A (en) | 2017-06-08 |
CN105392093B (en) | 2018-09-11 |
JP6211661B2 (en) | 2017-10-11 |
CN105392093A (en) | 2016-03-09 |
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