CN103561376A - Mems microphone and manufacturing method thereof - Google Patents
Mems microphone and manufacturing method thereof Download PDFInfo
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- CN103561376A CN103561376A CN201310482886.3A CN201310482886A CN103561376A CN 103561376 A CN103561376 A CN 103561376A CN 201310482886 A CN201310482886 A CN 201310482886A CN 103561376 A CN103561376 A CN 103561376A
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Abstract
The invention provides a manufacturing method of an MEMS microphone. A backboard assembly with a backboard and a backboard insulating layer is manufactured on a first substrate, an acoustic hole which penetrates through the backboard and the backboard insulating layer is formed in the backboard assembly, and an air hole is formed in the marginal area of the backboard insulating layer. A vibration diaphragm assembly with a vibration diaphragm is manufactured on a second substrate, and an acoustic cavity is formed in the vibration diaphragm assembly. The vibration diaphragm assembly is bound to the backboard assembly, the vibration diaphragm and the backboard are oppositely arranged, the acoustic hole and the acoustic cavity are communicated, and the air hole is communicated with the acoustic hole through the acoustic cavity. The invention further provides the MEMS microphone manufactured through the manufacturing method.
Description
Technical field
The present invention relates to microphone techniques, especially, relate to the manufacture method of a kind of MEMS (micro electro mechanical system) (Micro-Electro-Mechanic System, MEMS) microphone and described MEMS microphone.
Background technology
Along with the development of wireless telecommunications, user requires more and more higher to the speech quality of mobile phone, and microphone is as the voice pick device of mobile phone, and the quality of its design directly affects the speech quality of mobile phone.
At the widely used microphone of mobile phone, be MEMS microphone at present, a kind of MEMS microphone related to the present invention comprises vibrating diaphragm and backboard, the two forms MEMS sound sensing capacitance, and MEMS sound sensing capacitance is further connected to process chip by terminal pad and carries out signal processing so that sound transducing signal is exported to process chip.The vibrating diaphragm of above-mentioned MEMS microphone and backboard are at same silicon pedestal and utilize semiconductor fabrication process to be made, and in manufacturing process, also comprise processing steps such as forming the operatic tunes, back of the body chamber, acoustic holes, air-vent and terminal pad.
Because each manufacturing process steps of MEMS microphone is to make and form at same silicon pedestal, therefore must completing after, previous processing step can carry out next processing step, and this will cause the integral body manufacture efficiency of MEMS microphone lower.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of manufacture method that can improve the MEMS microphone of the whole manufacture of MEMS microphone efficiency; And the present invention also further provides a kind of MEMS microphone that adopts above-mentioned manufacture method manufacture to obtain.
The manufacture method of MEMS microphone provided by the invention, comprise: at the first pedestal, make the back board module with backboard and backboard insulating barrier, and at described back board module, form the acoustic holes that penetrates described backboard and described backboard insulating barrier, and form air-vent at the fringe region of described backboard insulating barrier; At the second pedestal, make the vibrating diaphragm assembly with vibrating diaphragm, and form the operatic tunes at described vibrating diaphragm assembly; Described vibrating diaphragm assembly is bonded to described back board module, so that described vibrating diaphragm and described backboard are oppositely arranged, described acoustic holes and the described operatic tunes are connected and described air-vent is connected with described acoustic holes by the described operatic tunes.
In a kind of preferred embodiment of the manufacture method of MEMS microphone provided by the invention, the described back board module with backboard and backboard insulating barrier of making at the first pedestal, and at described back board module, form the acoustic holes that penetrates described backboard and described backboard insulating barrier, and the fringe region formation air-vent at described backboard insulating barrier comprises: the first pedestal is provided, it comprises the first Semiconductor substrate, the first insulating barrier and backsheet layer, and the intermediate host region of wherein said backsheet layer is as described backboard; On described backsheet layer surface, make backboard insulating barrier, and make insulating protective layer in the bottom surface of described the first Semiconductor substrate; Fringe region at described backboard insulating barrier forms air-vent, and described air-vent extends to the side of described back board module;
Intermediate host region at described backboard insulating barrier and described backsheet layer etches a plurality of acoustic holes, described a plurality of acoustic holes penetrates described backboard insulating barrier and described backsheet layer, and described backboard insulating barrier is cut apart and formed a plurality of antiseized projections by described a plurality of acoustic holes.
In a kind of preferred embodiment of the manufacture method of MEMS microphone provided by the invention, the described vibrating diaphragm assembly with vibrating diaphragm of making at the second pedestal, and comprise at the described vibrating diaphragm assembly formation operatic tunes: the second pedestal is provided, and it comprises the second Semiconductor substrate, the second insulating barrier and vibrating diaphragm layer; At the described film surface that shakes, make vibrating diaphragm insulating barrier, and make insulating protective layer in the bottom surface of described the second Semiconductor substrate; By etching processing is carried out in the intermediate host region of described vibrating diaphragm insulating barrier and described vibrating diaphragm layer, formation penetrates described vibrating diaphragm insulating barrier and from the described film surface that shakes to downward-extension but do not penetrate the operatic tunes of described vibrating diaphragm layer, wherein, the intermediate host region that described vibrating diaphragm layer is not penetrated by the described operatic tunes forms described vibrating diaphragm, and the thickness of described vibrating diaphragm is less than the fringe region of described vibrating diaphragm layer.
In a kind of preferred embodiment of the manufacture method of MEMS microphone provided by the invention, describedly described vibrating diaphragm assembly is bonded to described back board module comprises: described vibrating diaphragm assembly is overturn; Described vibrating diaphragm assembly is aimed at described back board module; By bonding technology, the vibrating diaphragm insulating barrier of described vibrating diaphragm assembly is bonded to the backboard insulating barrier of described back board module.
In a kind of preferred embodiment of the manufacture method of MEMS microphone provided by the invention, also comprise: the insulating protective layer of described vibrating diaphragm assembly is etched away completely, and the second Semiconductor substrate of described vibrating diaphragm assembly is carried out to thinning processing; Region corresponding with described vibrating diaphragm in described vibrating diaphragm assembly etches ante-chamber, wherein said ante-chamber penetrates described the second Semiconductor substrate and described the second insulating barrier and extends to described vibrating diaphragm, and described ante-chamber and the described operatic tunes lay respectively at two opposite sides of described vibrating diaphragm; In described back board module, the region corresponding with described backboard etches back of the body chamber; wherein said back of the body chamber penetrates the insulating protective layer of described back board module, described the first Semiconductor substrate and described the first insulating barrier and extends to the bottom surface of described backboard, and described back of the body chamber is connected with described acoustic holes.
In a kind of preferred embodiment of the manufacture method of MEMS microphone provided by the invention, also comprise: make vibrating diaphragm connecting hole and backboard connecting hole, wherein said vibrating diaphragm connecting hole extends to described vibrating diaphragm layer from described the second semiconductor substrate surface, and described backboard connecting hole extends to described backsheet layer from described the second semiconductor substrate surface; In the bottom surface of described backboard connecting hole and the bottom surface of described vibrating diaphragm connecting hole, form respectively backboard terminal pad and vibrating diaphragm terminal pad; Wherein, described making vibrating diaphragm connecting hole and backboard connecting hole comprise: in forming the process of described air-vent, by forming the part that backboard connecting hole is positioned at described back board module at described backboard insulating barrier with an etching technics; In forming the process of the operatic tunes, by forming at described vibrating diaphragm insulating barrier and described vibrating diaphragm layer the first that described backboard connecting hole is positioned at described vibrating diaphragm assembly with an etching technics; In the process of ante-chamber described in etching, by forming at described the second Semiconductor substrate and the second insulating barrier the second portion that vibrating diaphragm connecting hole and described backboard connecting hole are positioned at described vibrating diaphragm assembly with etching technics.
MEMS microphone provided by the invention, comprises back board module and the vibrating diaphragm assembly of mutual bonding; Wherein, described back board module comprises backboard and backboard insulating barrier, and described back board module is formed with the acoustic holes that penetrates described backboard and described backboard insulating barrier, and the fringe region of described backboard insulating barrier is formed with air-vent; Described vibrating diaphragm assembly comprises the vibrating diaphragm that the backboard with described back board module is oppositely arranged, and described vibrating diaphragm assembly is formed with the operatic tunes, and the described operatic tunes is connected with described acoustic holes, and described air-vent is connected with described acoustic holes by the described operatic tunes.
In a kind of preferred embodiment of MEMS microphone provided by the invention, described back board module also comprises the first Semiconductor substrate and the first insulating barrier, described the first insulating barrier is arranged on described the first semiconductor substrate surface, and described the first surface of insulating layer is provided with backsheet layer, the intermediate host region of described backsheet layer is as described backboard; Described backboard insulating barrier is arranged on described back plate surface, and described backboard insulating barrier is cut apart and formed a plurality of antiseized projections by described a plurality of acoustic holes.
In a kind of preferred embodiment of MEMS microphone provided by the invention, described vibrating diaphragm assembly also comprises the second Semiconductor substrate and described the second insulating barrier, described the second insulating barrier is arranged on described the second semiconductor substrate surface, and described the second surface of insulating layer is provided with vibrating diaphragm layer; The intermediate host region of described vibrating diaphragm layer is as described vibrating diaphragm, and the thickness of described vibrating diaphragm is less than the fringe region of described vibrating diaphragm layer; The fringe region surface of described vibrating diaphragm layer is also provided with vibrating diaphragm insulating barrier, and described vibrating diaphragm insulating barrier and described backboard insulating barrier are in contact with one another and synthesize one; The described operatic tunes penetrates described vibrating diaphragm insulating barrier and extends to described vibrating diaphragm surface.
In a kind of preferred embodiment of MEMS microphone provided by the invention, described vibrating diaphragm assembly also comprises the ante-chamber corresponding with described vibrating diaphragm, described ante-chamber and the described operatic tunes lay respectively at two opposite sides of described vibrating diaphragm, and described ante-chamber penetrates described the second Semiconductor substrate and described the second insulating barrier and extends to described vibrating diaphragm;
Described back board module also comprises the back of the body chamber corresponding with described backboard; described back of the body chamber penetrates the insulating protective layer of described back board module, described the first Semiconductor substrate and described the first insulating barrier and extends to the bottom surface of described backboard, and described back of the body chamber is connected with described acoustic holes.
MEMS microphone provided by the invention and manufacture method thereof, because described back board module and described vibrating diaphragm assembly are to be made at different pedestals, therefore the making of described back board module and described vibrating diaphragm assembly can be carried out simultaneously, can effectively improve thus the integral body of MEMS microphone and manufacture efficiency; And, back board module or problem vibrating diaphragm assembly if gone wrong in manufacture process, before carrying out bonding, can adopt other back board modules or vibrating diaphragm assembly to come replacement problem back board module or problem vibrating diaphragm assembly, thereby improve the whole fine ratio of product of described MEMS microphone.And described air-vent is formed on the fringe region of described backboard insulating barrier, can active balance described in the air pressure of vibrating diaphragm both sides, effectively reduce the stress of described vibrating diaphragm, guarantee that described MEMS microphone has high sensitivity characteristic; In addition, described vibrating diaphragm can not offered acoustic holes, thereby can effectively improve the sound pressure level of described vibrating diaphragm.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also according to these accompanying drawings, obtain other accompanying drawing, wherein:
Fig. 1 is the structural representation that adopts a kind of embodiment of MEMS microphone that the manufacture method of MEMS microphone provided by the invention is made;
Fig. 2 is the flow chart of a kind of embodiment of manufacture method of MEMS microphone provided by the invention;
Fig. 3 .1～3.4th, makes the process schematic representation of back board module in the manufacture method of the MEMS microphone shown in Fig. 2;
Fig. 4 .1～4.3rd, makes the process schematic representation of vibrating diaphragm assembly in the manufacture method of the MEMS microphone shown in Fig. 2;
Fig. 5 in the manufacture method of the MEMS microphone shown in Fig. 2 carries out vibrating diaphragm assembly and back board module the process schematic representation of bonding;
Fig. 6 forms the process schematic representation of ante-chamber and connecting hole in the manufacture method of the MEMS microphone shown in Fig. 2;
Fig. 7 forms the process schematic representation in back of the body chamber in the manufacture method of the MEMS microphone shown in Fig. 2;
Fig. 8 forms the process schematic representation of terminal pad in the manufacture method of the MEMS microphone shown in Fig. 2.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only a part of embodiment of the present invention, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making all other embodiment that obtain under creative work prerequisite, belong to the scope of protection of the invention.
The manufacture method of MEMS microphone provided by the invention is by making respectively back board module and vibrating diaphragm assembly at two different pedestals, then by MEMS bonding technology, described back board module and described vibrating diaphragm assembly are carried out to bonding, after this on the microphone process component basis forming at the bonding of above-mentioned back board module and vibrating diaphragm assembly, form cavity, cavity and carry out other subsequent technique processing, thereby obtaining MEMS microphone.
Refer to Fig. 1, adopt the structural representation of a kind of embodiment of MEMS microphone that the manufacture method of MEMS microphone provided by the invention is made.Described MEMS microphone 100 comprises back board module 10 and vibrating diaphragm assembly 20, and wherein, described vibrating diaphragm assembly 20 is fixed on described back board module 10 surfaces by bonding technology.
Described back board module 10 can form at a SOI (Silicon on Insulator, the silicon on insulator) pedestal, and it comprises the first Semiconductor substrate 110, the first insulating barrier 120 and backsheet layer 130.Described the first Semiconductor substrate 110 can be silicon substrate, and described backsheet layer 130 can be polysilicon layer or the monocrystalline silicon layer of conductive doped material, and described the first insulating barrier 120 can be oxide layer, such as silicon dioxide layer.And, described the first insulating barrier 120 and described backsheet layer 130 can sequentially be arranged on described the first Semiconductor substrate 110 surfaces, thereby formation soi structure, the intermediate host of wherein said backsheet layer 130 partly can be used as the backboard 180 of described MEMS microphone 100.
Described backsheet layer 130 surfaces can also be provided with backboard insulating barrier 140, and described backboard insulating barrier 140 can be oxide layer equally, such as silicon dioxide layer.Described backboard insulating barrier 140 and described backsheet layer 130 can form a plurality of acoustic holes 150 by etching processing in described backboard 180 regions, and described acoustic holes 150 can penetrate described backboard insulating barrier 140 and described backsheet layer 130 simultaneously.Described backboard insulating barrier 140 is cut apart and is formed a plurality of projections 141 by described a plurality of acoustic holes 150 in described backboard 180 regions, described projection 141 can be used as antiseized projection, bonds to described backboard 180 and cause short circuit while being used for preventing vibrating diaphragm 280 vibration of described vibrating diaphragm assembly 20.In addition, the fringe region of described backboard insulating barrier 140 can form air-vent 151 by etching processing.Described air-vent 151 can be connected with described acoustic holes 150, and described air-vent 151 can extend to the side of described back board module 10.
In addition, the bottom surface of described the first Semiconductor substrate 110 can also be provided with insulating protective layer 170, and described insulating protective layer 170 can be oxide layer equally, such as silicon dioxide layer.Described insulating protective layer 170, described the first Semiconductor substrate 110 and described the first insulating barrier 120 can form back of the body chamber 160 by etching processing in described backboard 180 regions; described back of the body chamber 160 penetrates described insulating protective layer 170, described the first Semiconductor substrate 110 and described the first insulating barrier 120 and extends to the bottom surface of described backboard 180, and is connected with described a plurality of acoustic holes 150.
Described vibrating diaphragm assembly 20 can form at the 2nd SOI pedestal, and it comprises the second Semiconductor substrate 210, the second insulating barrier 220 and vibrating diaphragm layer 230.Similar with described back board module 10, described the second Semiconductor substrate 210 can be silicon substrate equally, described vibrating diaphragm layer 230 can be polysilicon layer or the monocrystalline silicon layer of conductive doped material, and described the second insulating barrier 220 can be oxide layer, such as silicon dioxide layer.And described the second insulating barrier 220 and described vibrating diaphragm layer 230 can sequentially be arranged on described the second Semiconductor substrate 110 surfaces, thereby form another soi structure.Wherein, the intermediate host of described vibrating diaphragm layer 230 part (i.e. the part corresponding with described backboard 180) can be used as vibrating diaphragm 280, and the thickness of described vibrating diaphragm 280 is less than the fringe region of described vibrating diaphragm layer 230.
Described vibrating diaphragm layer 230 surface can also be provided with vibrating diaphragm insulating barrier 240, and described vibrating diaphragm insulating barrier 240 can be oxide layer equally, such as silicon dioxide layer.When described vibrating diaphragm assembly 20 is bonded to described back board module 10, described vibrating diaphragm assembly 20 can overturn and make described vibrating diaphragm insulating barrier 240 be positioned at bottom, and after bonding, described vibrating diaphragm insulating barrier 240 is in contact with one another and synthesizes one with the backboard insulating barrier 140 of described back board module 10.
Described vibrating diaphragm insulating barrier 240 and described vibrating diaphragm layer 230 can form the operatic tunes 250 by etching processing in described vibrating diaphragm 280 regions, and the described operatic tunes 250 penetrates described vibrating diaphragm insulating barrier 240 and extends to described vibrating diaphragm 280.The described operatic tunes 250 can be connected with described air-vent 151, and makes thus described air-vent 151 to be connected with described acoustic holes 150 by the described operatic tunes 250.In the present embodiment, because described air-vent 151 is formed on the fringe region of described backboard insulating barrier 140, the air pressure of vibrating diaphragm 280 both sides described in can active balance, effectively reduces the stress of described vibrating diaphragm 280, guarantees that described MEMS microphone 100 has high sensitivity characteristic; And based on said structure, described vibrating diaphragm 280 can not offered acoustic holes, thereby can effectively improve the sound pressure level of described vibrating diaphragm 280.In addition, described the second Semiconductor substrate 210 and described the second insulating barrier 220 also can form ante-chamber 260 by etching processing in described vibrating diaphragm 280 regions, and described ante-chamber 260 penetrates described the second Semiconductor substrate 210 and described the first insulating barrier 220 and extends to described vibrating diaphragm 280.
20 upsets of described vibrating diaphragm assembly and with the mutual bonding of described back board module 10 after, described backboard 180 is relative with described vibrating diaphragm 280, and the described operatic tunes 250 is between the two, thereby form MEMS sound sensing capacitance, for being transferred to process chip, the phonoreception induction signal that described MEMS sound sensing capacitance is produced when described MEMS microphone 100 is worked carries out signal processing, the surface of the fringe region of described backsheet layer 130 and described vibrating diaphragm layer 230 can also be respectively arranged with backboard terminal pad 190 and vibrating diaphragm terminal pad 290, described backboard terminal pad 190 and described vibrating diaphragm terminal pad 290 can be separately positioned on the not homonymy of described vibrating diaphragm 280 and described backboard 180.Particularly, described vibrating diaphragm terminal pad 290 can be arranged on a side at described air-vent 151 places, and described backboard terminal pad 190 can be arranged on a side relative with described air-vent 151.
And, the region at described backboard terminal pad 190 and described vibrating diaphragm terminal pad 290 places offers respectively backboard connecting hole 191 and vibrating diaphragm connecting hole 291, so that described backboard terminal pad 190 and described vibrating diaphragm terminal pad 290 externally exposed so that itself and described process chip are electrically connected.Wherein, described backboard connecting hole 191 can penetrate described the second Semiconductor substrate 210, described the second insulating barrier 220, described vibrating diaphragm layer 230, described vibrating diaphragm insulating barrier 240 and described backboard insulating barrier 140 and extend to described backsheet layer 130 surfaces, and described vibrating diaphragm connecting hole 291 can penetrate described the second Semiconductor substrate 210 and described the second insulating barrier 220 and extend to described vibrating diaphragm layer 230 surface.
Refer to Fig. 2, it is the flow chart of a kind of embodiment of manufacture method of MEMS microphone provided by the invention, and the manufacture method of described MEMS microphone can be used for the MEMS microphone 100 shown in construction drawing 1, and it can specifically comprise the following steps.
Step S1, makes the back board module 10 with backboard 180 at the first pedestal, and forms acoustic holes 150 and air-vent 151 at described back board module 10;
Particularly, described step S1 can comprise following sub-step:
S11, provides the first pedestal, and it comprises the first Semiconductor substrate 110, the first insulating barrier 120 and backsheet layer 130, as shown in Fig. 3 .1;
Described the first Semiconductor substrate 110 can be silicon substrate, described the first insulating barrier 120 and described backsheet layer 130 are respectively polysilicon layer or the monocrystalline silicon layer of oxide layer and conductive doped material, and the two is sequentially arranged on described the first Semiconductor substrate 110 surfaces, thereby form first pedestal with soi structure.
S12, makes backboard insulating barrier 140 on described backsheet layer 130 surfaces, and makes insulating protective layer 170 in described the first Semiconductor substrate 110 bottom surfaces, as shown in Figure 3 .2;
Described backboard insulating barrier 140 and described insulating protective layer 170 can be oxide layer; particularly; by oxidation processes is carried out in two relative surfaces of described back board module 10 simultaneously, can realize on the surface of described backsheet layer 130 and the bottom surface of described the first Semiconductor substrate 110 and form respectively described backboard insulating barrier 140 and described insulating protective layer 170.
S13, at the fringe region formation air-vent 151 of described backboard insulating barrier 140, described air-vent 151 extends to the side of described back board module 10, as shown in Fig. 3 .3;
Particularly, by the fringe region of described backboard insulating barrier 140 is carried out to etching processing, can form the air-vent 151 that extends to described back board module 10 sides; Alternatively, in forming the process of described air-vent 151, by forming the part 191a that backboard connecting hole 191 is positioned at described back board module 10 at the backboard insulating barrier 140 of the relative side of described air-vent 151 with an etching technics.
S14, etches a plurality of acoustic holes 150 in the intermediate host region of described backboard insulating barrier 140 and described backsheet layer 130, and the intermediate host region of described backsheet layer 130 is as described backboard 180, as shown in Fig. 3 .4;
Particularly, by described etching processing, described a plurality of acoustic holes 150 can distributed earth form the intermediate host region of described backboard insulating barrier 140 and described backsheet layer 130, and wherein said acoustic holes 150 penetrates described backboard insulating barrier 140 and described backsheet layer 130; And, in described intermediate host region, the effect of cutting apart due to described a plurality of acoustic holes 150 forms a plurality of antiseized projections 141 to described backboard insulating barrier 140, and described backsheet layer 130 is positioned at the part in described intermediate host region and can be used as described backboard 180, described backboard 180 is covered by described antiseized projection 141.
Step S2, makes the vibrating diaphragm assembly 20 with vibrating diaphragm 280 at the second pedestal, and forms the operatic tunes 250 at described vibrating diaphragm assembly 20;
Particularly, described step S2 can comprise following sub-step:
S21, provides the second pedestal, and it comprises the second Semiconductor substrate 210, the second insulating barrier 220 and vibrating diaphragm layer 230, as shown in Fig. 4 .1;
Described the second Semiconductor substrate 210 can be silicon substrate, described the second insulating barrier 220 and described vibrating diaphragm layer 230 are respectively polysilicon layer or the monocrystalline silicon layer of oxide layer and conductive doped material, and the two is sequentially arranged on described the second Semiconductor substrate 210 surfaces, thereby form second pedestal with soi structure.
S22, makes vibrating diaphragm insulating barrier 240 on described vibrating diaphragm layer 230 surface, and makes insulating protective layer 270 in described the second Semiconductor substrate 210 bottom surfaces, as shown in Fig. 4 .2;
Described vibrating diaphragm insulating barrier 240 and described insulating protective layer 270 can be oxide layer; particularly; by oxidation processes is carried out in two relative surfaces of described the second pedestal simultaneously, can realize on the surface of described vibrating diaphragm layer 230 and the bottom surface of described the second Semiconductor substrate 210 and form respectively described vibrating diaphragm insulating barrier 140 and described insulating protective layer 270.
S23, etches the operatic tunes 250 in the intermediate host region of described vibrating diaphragm insulating barrier 240 and described vibrating diaphragm layer 230, and forms described vibrating diaphragm 280, as shown in Fig. 4 .3;
Particularly, by intermediate host region corresponding with described backboard 180 in described vibrating diaphragm insulating barrier 240 and described vibrating diaphragm layer 230, carry out etching processing, can form and penetrate described vibrating diaphragm insulating barrier 240 and from described vibrating diaphragm layer 230 surface to downward-extension but do not penetrate the operatic tunes 250 of described vibrating diaphragm layer 230, and the intermediate host region not penetrated by the described operatic tunes 250 at described vibrating diaphragm layer 230 can form the vibrating diaphragm 280 that thickness is less.
Alternatively, in forming the process of the operatic tunes 250, by forming at the fringe region of described vibrating diaphragm insulating barrier 240 and described vibrating diaphragm layer 230 with an etching technics 191b of first that described backboard connecting hole 191 is positioned at described vibrating diaphragm assembly 20, and the etch rate of this part is a little more than the etch rate of the described operatic tunes 250, thereby described in guaranteeing when etching completes, this part 191b of backboard connecting hole 191 penetrates described vibrating diaphragm insulating barrier 240 and described vibrating diaphragm layer 230 simultaneously, and the described operatic tunes 250 penetrates described vibrating diaphragm insulating barrier 240 and do not penetrate described vibrating diaphragm layer 230.
Step S3, aims at and is bonded to described back board module 10 by described vibrating diaphragm assembly 20, so that described vibrating diaphragm 280 is oppositely arranged with described backboard 180 and described acoustic holes 150 and the described operatic tunes 250 are connected;
As shown in Figure 5, particularly, described step S3 can comprise following sub-step:
S31, overturns described vibrating diaphragm assembly 20, upset after described vibrating diaphragm insulating barrier 240 be positioned at bottom and the described operatic tunes 250 opening down;
S32, aims at described vibrating diaphragm assembly 20 with described back board module 10, so that described backboard 180 is relative with described vibrating diaphragm 280;
Particularly, vibrating diaphragm assembly 20 after described upset can be moved to described back board module 10 tops, and pass through Alignment Process, the backboard 180 of described back board module 10 is covered by the vibrating diaphragm 280 of described vibrating diaphragm assembly 20, and the described operatic tunes 250 is just between described vibrating diaphragm 180 and described backboard 280, and be connected with described acoustic holes 150; On the other hand, the 191b of first that described Alignment Process can also further make described backboard connecting hole 191 be positioned at described vibrating diaphragm assembly 20 aims at the part 191a that described backboard connecting hole 191 is positioned at described back board module 10 just.And described Alignment Process can also further make described air-vent 151 be connected with the described operatic tunes 250 by the edge of described backboard insulating barrier 140, and is further connected with described acoustic holes 150 by the described operatic tunes 250.
S33, is bonded to the vibrating diaphragm insulating barrier 240 of described vibrating diaphragm assembly 20 by bonding technology the backboard insulating barrier 140 of described back board module 10;
After bonding, described vibrating diaphragm insulating barrier 240 synthesizes one with described backboard insulating barrier 140, and making thus described back board module 10 be synthesized with described vibrating diaphragm assembly 20 is a microphone process component.
Step S4, forms ante-chamber 260, vibrating diaphragm connecting hole 291 and backboard connecting hole 191 at described vibrating diaphragm assembly 20;
As shown in Figure 6, first, by etching technics, the insulating protective layer of described vibrating diaphragm assembly 20 270 is etched away completely, and by the second Semiconductor substrate 210 partial etchings of described vibrating diaphragm assembly 20, thereby the thinning that realizes described vibrating diaphragm assembly 20 is processed;
Secondly, by etching technics, in the intermediate host region (i.e. the region corresponding with described vibrating diaphragm 280) of described vibrating diaphragm assembly 20, etch ante-chamber 260, described ante-chamber 260 can penetrate described the second Semiconductor substrate 210 and described the second insulating barrier 220, and extends to described vibrating diaphragm 280.Wherein, described ante-chamber 260 and the described operatic tunes 250 lay respectively at two opposite sides of described vibrating diaphragm 280.
And, in the process of ante-chamber described in etching 260, by can the second semiconductor layer 210 and the second insulating barrier 220 above described air-vent 151 forming vibrating diaphragm connecting hole 291 with an etching technics, described vibrating diaphragm connecting hole 291 penetrates equally described the second Semiconductor substrate 210 and described the second insulating barrier 220 and extends to the vibrating diaphragm layer 230 of described air-vent 151 tops.And, with an etching technics, can also form the second portion that described backboard connecting hole 191 is positioned at described vibrating diaphragm assembly 20 at the opposite side of described the second semiconductor layer 210 and the second insulating barrier 220, and described second portion just extends to the part 191a that is positioned at the 191b of first of described vibrating diaphragm assembly 20 and is positioned at described back board module 10 with described backboard connecting hole 191 and is connected, and forms the opening direction backboard connecting hole 191 identical with described ante-chamber 260.
Step S5, forms back of the body chamber 160 at described back board module 10;
As shown in Figure 7; particularly; by etching technics, in the intermediate host region (i.e. the region corresponding with described backboard 180) of described back board module 10, etch back of the body chamber 160; described back of the body chamber 160 penetrates described insulating protective layer 170, described the first Semiconductor substrate 110 and described the first insulating barrier 120 and extends to the bottom surface of described backboard 180, and is connected with described a plurality of acoustic holes 150.
Step S6, forms respectively backboard terminal pad 190 and vibrating diaphragm terminal pad 290 at described vibrating diaphragm connecting hole 291 and described backboard connecting hole 191.
As shown in Figure 8, particularly, by specific region surface metalation, process, can be in the bottom surface of described vibrating diaphragm connecting hole 291 and described backboard connecting hole 191, be that described vibrating diaphragm layer 230 surface and described backsheet layer 130 surfaces form respectively metal pad, described metal pad can be respectively as described vibrating diaphragm terminal pad 290 and described backboard terminal pad 190, and described vibrating diaphragm terminal pad 290 is electrically connected by fringe region and the described vibrating diaphragm 280 of described vibrating diaphragm layer 230, and fringe region and the described backboard 180 of described backboard terminal pad 190 by described backsheet layer 130 is electrically connected.
Thus, by above-mentioned manufacture method, just the back board module 10 of described step S1 and the vibrating diaphragm assembly 20 of step S2 can form MEMS microphone 100 as shown in Figure 1, in each step of above-mentioned manufacture method, not have strict ordinal relation, such as can be made at different SOI pedestals simultaneously; And for example, the ante-chamber 260 of described step S4 and the back of the body chamber 160 of described step S5 also can be by two-sided etching technics while etching out.
In the manufacture method of MEMS microphone provided by the invention, because described back board module 10 and described vibrating diaphragm assembly 20 are to be made at different pedestals, therefore the making of described back board module 10 and described vibrating diaphragm assembly 20 can be carried out simultaneously, can effectively improve thus the integral body of MEMS microphone and manufacture efficiency; And, if go wrong back board module or problem vibrating diaphragm assembly in manufacture process, can adopt other back board modules or vibrating diaphragm assembly to come replacement problem back board module or problem vibrating diaphragm assembly, thereby improve the whole fine ratio of product of described MEMS microphone.
The foregoing is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes specification of the present invention and accompanying drawing content to do; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present invention.
Claims (10)
1. a manufacture method for MEMS microphone, is characterized in that, comprising:
At the first pedestal, make the back board module with backboard and backboard insulating barrier, and at described back board module, form the acoustic holes that penetrates described backboard and described backboard insulating barrier, and form air-vent at the fringe region of described backboard insulating barrier;
At the second pedestal, make the vibrating diaphragm assembly with vibrating diaphragm, and form the operatic tunes at described vibrating diaphragm assembly;
Described vibrating diaphragm assembly is bonded to described back board module, so that described vibrating diaphragm and described backboard are oppositely arranged, described acoustic holes and the described operatic tunes are connected and described air-vent is connected with described acoustic holes by the described operatic tunes.
2. the manufacture method of MEMS microphone as claimed in claim 1, it is characterized in that, the described back board module with backboard and backboard insulating barrier of making at the first pedestal, and at described back board module, form the acoustic holes that penetrates described backboard and described backboard insulating barrier, and comprise at the fringe region formation air-vent of described backboard insulating barrier:
The first pedestal is provided, and it comprises the first Semiconductor substrate, the first insulating barrier and backsheet layer, and the intermediate host region of wherein said backsheet layer is as described backboard;
On described backsheet layer surface, make backboard insulating barrier, and make insulating protective layer in the bottom surface of described the first Semiconductor substrate;
Fringe region at described backboard insulating barrier forms air-vent, and described air-vent extends to the side of described back board module;
Intermediate host region at described backboard insulating barrier and described backsheet layer etches a plurality of acoustic holes, described a plurality of acoustic holes penetrates described backboard insulating barrier and described backsheet layer, and described backboard insulating barrier is cut apart and formed a plurality of antiseized projections by described a plurality of acoustic holes.
3. the manufacture method of MEMS microphone as claimed in claim 2, is characterized in that, the described vibrating diaphragm assembly with vibrating diaphragm of making at the second pedestal, and comprise at the described vibrating diaphragm assembly formation operatic tunes:
The second pedestal is provided, and it comprises the second Semiconductor substrate, the second insulating barrier and vibrating diaphragm layer;
At the described film surface that shakes, make vibrating diaphragm insulating barrier, and make insulating protective layer in the bottom surface of described the second Semiconductor substrate;
By etching processing is carried out in the intermediate host region of described vibrating diaphragm insulating barrier and described vibrating diaphragm layer, formation penetrates described vibrating diaphragm insulating barrier and from the described film surface that shakes to downward-extension but do not penetrate the operatic tunes of described vibrating diaphragm layer, wherein, the intermediate host region that described vibrating diaphragm layer is not penetrated by the described operatic tunes forms described vibrating diaphragm, and the thickness of described vibrating diaphragm is less than the fringe region of described vibrating diaphragm layer.
4. the manufacture method of MEMS microphone as claimed in claim 3, is characterized in that, describedly described vibrating diaphragm assembly is bonded to described back board module comprises:
Described vibrating diaphragm assembly is overturn;
Described vibrating diaphragm assembly is aimed at described back board module;
By bonding technology, the vibrating diaphragm insulating barrier of described vibrating diaphragm assembly is bonded to the backboard insulating barrier of described back board module.
5. the manufacture method of MEMS microphone as claimed in claim 3, is characterized in that, also comprises:
The insulating protective layer of described vibrating diaphragm assembly is etched away completely, and the second Semiconductor substrate of described vibrating diaphragm assembly is carried out to thinning processing;
Region corresponding with described vibrating diaphragm in described vibrating diaphragm assembly etches ante-chamber, wherein said ante-chamber penetrates described the second Semiconductor substrate and described the second insulating barrier and extends to described vibrating diaphragm, and described ante-chamber and the described operatic tunes lay respectively at two opposite sides of described vibrating diaphragm;
In described back board module, the region corresponding with described backboard etches back of the body chamber; wherein said back of the body chamber penetrates the insulating protective layer of described back board module, described the first Semiconductor substrate and described the first insulating barrier and extends to the bottom surface of described backboard, and described back of the body chamber is connected with described acoustic holes.
6. the manufacture method of MEMS microphone as claimed in claim 5, is characterized in that, also comprises:
Make vibrating diaphragm connecting hole and backboard connecting hole, wherein said vibrating diaphragm connecting hole extends to described vibrating diaphragm layer from described the second semiconductor substrate surface, and described backboard connecting hole extends to described backsheet layer from described the second semiconductor substrate surface;
In the bottom surface of described backboard connecting hole and the bottom surface of described vibrating diaphragm connecting hole, form respectively backboard terminal pad and vibrating diaphragm terminal pad;
Wherein, described making vibrating diaphragm connecting hole and backboard connecting hole comprise:
In forming the process of described air-vent, by forming the part that backboard connecting hole is positioned at described back board module at described backboard insulating barrier with an etching technics;
In forming the process of the operatic tunes, by forming at described vibrating diaphragm insulating barrier and described vibrating diaphragm layer the first that described backboard connecting hole is positioned at described vibrating diaphragm assembly with an etching technics;
In the process of ante-chamber described in etching, by forming at described the second Semiconductor substrate and the second insulating barrier the second portion that vibrating diaphragm connecting hole and described backboard connecting hole are positioned at described vibrating diaphragm assembly with etching technics.
7. a MEMS microphone, is characterized in that, comprises back board module and the vibrating diaphragm assembly of mutual bonding;
Wherein, described back board module comprises backboard and backboard insulating barrier, and described back board module is formed with the acoustic holes that penetrates described backboard and described backboard insulating barrier, and the fringe region of described backboard insulating barrier is formed with air-vent;
Described vibrating diaphragm assembly comprises the vibrating diaphragm that the backboard with described back board module is oppositely arranged, and described vibrating diaphragm assembly is formed with the operatic tunes, and the described operatic tunes is connected with described acoustic holes, and described air-vent is connected with described acoustic holes by the described operatic tunes.
8. MEMS microphone as claimed in claim 7, it is characterized in that, described back board module also comprises the first Semiconductor substrate and the first insulating barrier, described the first insulating barrier is arranged on described the first semiconductor substrate surface, and described the first surface of insulating layer is provided with backsheet layer, the intermediate host region of described backsheet layer is as described backboard; Described backboard insulating barrier is arranged on described back plate surface, and described backboard insulating barrier is cut apart and formed a plurality of antiseized projections by described a plurality of acoustic holes.
9. MEMS microphone as claimed in claim 8, it is characterized in that, described vibrating diaphragm assembly also comprises the second Semiconductor substrate and described the second insulating barrier, and described the second insulating barrier is arranged on described the second semiconductor substrate surface, and described the second surface of insulating layer is provided with vibrating diaphragm layer; The intermediate host region of described vibrating diaphragm layer is as described vibrating diaphragm, and the thickness of described vibrating diaphragm is less than the fringe region of described vibrating diaphragm layer; The fringe region surface of described vibrating diaphragm layer is also provided with vibrating diaphragm insulating barrier, and described vibrating diaphragm insulating barrier and described backboard insulating barrier are in contact with one another and synthesize one; The described operatic tunes penetrates described vibrating diaphragm insulating barrier and extends to described vibrating diaphragm surface.
10. MEMS microphone as claimed in claim 9, it is characterized in that, described vibrating diaphragm assembly also comprises the ante-chamber corresponding with described vibrating diaphragm, described ante-chamber and the described operatic tunes lay respectively at two opposite sides of described vibrating diaphragm, and described ante-chamber penetrates described the second Semiconductor substrate and described the second insulating barrier and extends to described vibrating diaphragm;
Described back board module also comprises the back of the body chamber corresponding with described backboard; described back of the body chamber penetrates the insulating protective layer of described back board module, described the first Semiconductor substrate and described the first insulating barrier and extends to the bottom surface of described backboard, and described back of the body chamber is connected with described acoustic holes.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113810A (en) * | 2014-07-18 | 2014-10-22 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and preparation method thereof and electronic device |
| CN104754480A (en) * | 2015-02-09 | 2015-07-01 | 瑞声声学科技(深圳)有限公司 | Micro-electro-mechanical system microphone and manufacturing method thereof |
| CN105392089A (en) * | 2015-12-03 | 2016-03-09 | 瑞声声学科技(深圳)有限公司 | Composite layer structure and manufacture method thereof |
| CN105848075A (en) * | 2015-01-15 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | MEMS (Micro Electro Mechanical Systems) device, manufacturing method thereof and electronic device |
| CN107484092A (en) * | 2016-06-07 | 2017-12-15 | 罗伯特·博世有限公司 | Sensor and/or converter apparatus and the method for running it |
| CN108966098A (en) * | 2017-05-19 | 2018-12-07 | 现代自动车株式会社 | microphone and its manufacturing method |
| CN112672243A (en) * | 2020-12-29 | 2021-04-16 | 瑞声声学科技(深圳)有限公司 | Microphone and method for manufacturing the same |
| CN113132877A (en) * | 2021-06-17 | 2021-07-16 | 甬矽电子(宁波)股份有限公司 | Microphone packaging structure and preparation method thereof |
| WO2022007010A1 (en) * | 2020-07-06 | 2022-01-13 | 瑞声声学科技(深圳)有限公司 | Diaphragm for mems microphone, and mems microphone |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101199234A (en) * | 2005-05-16 | 2008-06-11 | 森斯费伯私人有限公司 | Silicon microphone |
| CN101854578A (en) * | 2010-06-01 | 2010-10-06 | 无锡芯感智半导体有限公司 | Miniature microphone manufacturing method based on Si-Si bonding process |
| US20110123043A1 (en) * | 2009-11-24 | 2011-05-26 | Franz Felberer | Micro-Electromechanical System Microphone |
| CN202957975U (en) * | 2012-11-15 | 2013-05-29 | 歌尔声学股份有限公司 | Micro electro mechanical microphone chip |
| CN103139691A (en) * | 2013-02-22 | 2013-06-05 | 上海微联传感科技有限公司 | Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof |
-
2013
- 2013-10-15 CN CN201310482886.3A patent/CN103561376B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101199234A (en) * | 2005-05-16 | 2008-06-11 | 森斯费伯私人有限公司 | Silicon microphone |
| US20110123043A1 (en) * | 2009-11-24 | 2011-05-26 | Franz Felberer | Micro-Electromechanical System Microphone |
| CN101854578A (en) * | 2010-06-01 | 2010-10-06 | 无锡芯感智半导体有限公司 | Miniature microphone manufacturing method based on Si-Si bonding process |
| CN202957975U (en) * | 2012-11-15 | 2013-05-29 | 歌尔声学股份有限公司 | Micro electro mechanical microphone chip |
| CN103139691A (en) * | 2013-02-22 | 2013-06-05 | 上海微联传感科技有限公司 | Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113810A (en) * | 2014-07-18 | 2014-10-22 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and preparation method thereof and electronic device |
| CN105848075B (en) * | 2015-01-15 | 2020-02-11 | 中芯国际集成电路制造(上海)有限公司 | MEMS device preparation method |
| CN105848075A (en) * | 2015-01-15 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | MEMS (Micro Electro Mechanical Systems) device, manufacturing method thereof and electronic device |
| CN104754480A (en) * | 2015-02-09 | 2015-07-01 | 瑞声声学科技(深圳)有限公司 | Micro-electro-mechanical system microphone and manufacturing method thereof |
| CN104754480B (en) * | 2015-02-09 | 2018-09-11 | 瑞声声学科技(深圳)有限公司 | MEMS microphone and its manufacturing method |
| CN105392089A (en) * | 2015-12-03 | 2016-03-09 | 瑞声声学科技(深圳)有限公司 | Composite layer structure and manufacture method thereof |
| CN107484092A (en) * | 2016-06-07 | 2017-12-15 | 罗伯特·博世有限公司 | Sensor and/or converter apparatus and the method for running it |
| CN108966098A (en) * | 2017-05-19 | 2018-12-07 | 现代自动车株式会社 | microphone and its manufacturing method |
| CN108966098B (en) * | 2017-05-19 | 2021-06-22 | 现代自动车株式会社 | Microphone and method for manufacturing the same |
| DE102017126208B4 (en) | 2017-05-19 | 2022-12-22 | Hyundai Motor Company | MICROPHONE AND ITS MANUFACTURING PROCESS |
| WO2022007010A1 (en) * | 2020-07-06 | 2022-01-13 | 瑞声声学科技(深圳)有限公司 | Diaphragm for mems microphone, and mems microphone |
| CN112672243A (en) * | 2020-12-29 | 2021-04-16 | 瑞声声学科技(深圳)有限公司 | Microphone and method for manufacturing the same |
| CN113132877A (en) * | 2021-06-17 | 2021-07-16 | 甬矽电子(宁波)股份有限公司 | Microphone packaging structure and preparation method thereof |
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