CN103139691A - Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof - Google Patents
Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides a micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and a manufacturing method thereof. The MEMS silicon microphone comprises a multi-hole back pole plate silicon substrate and a single crystal silicon vibrating diaphragm placed above the multi-hole back plate silicon substrate. The MEMS silicon microphone is characterized in that the multi-hole back plate silicon substrate and the single crystal silicon vibrating diaphragm serve as two pole plates of a microphone capacitor and are integrated in a bonding mode through a silicon bonding process. The multi-hole back pole plate silicon substrate is provided with a back pole plate metal electrode, a sound aperture and a back cavity, the single crystal silicon vibrating diaphragm is provided with a metal electrode and a small protruded column, and the vibrating diaphragm electrode and the back pole plate respectively serve as output signal leading-out ends of two pole plates of the microphone capacitor to be used for being in electric connection with a complementary metal oxide semiconductor (CMOS) signal amplifying circuit. The single crystal silicon vibrating diaphragm is supported by a silicon oxide layer to be suspended above the multi-hole back plate silicon substrate, and an air gap exists between the single crystal silicon vibrating diaphragm and the multi-hole back plate silicon substrate, and the multi-hole back plate silicon substrate, the single crystal silicon vibrating diaphragm and the air gap form a capacitance structure. The MEMS silicon microphone utilizing multi-hole SOI silicon bonding and the manufacturing method thereof are simple in process, high in product sensitivity, good in consistency and high in yield rate.
Description
Technical field
The present invention relates to a kind of capacitance silicon microphone and preparation method thereof, particularly disclose a kind of MEMS silicon microphone that adopts porous SOI Si-Si bonding, belong to the technical field of silicon microphone.
Background technology
Mike's wind energy is converted into the corresponding signal of telecommunication to people's voice signal, is widely used in mobile phone, computer, telephone set, camera and video camera etc.Traditional electret capacitor microphone adopts Teflon as vibration film, can not bear the high temperature at nearly 300 degree of reflow soldering of printed circuit board technique, thereby can only separate with the assembling of integrated circuit, and hand assembled, increased production cost greatly separately.
The MEMS(Microelectromechanical Systems of nearly 30 years) development of technology, particularly based on the development of silicon MEMS technology, realized the microminiaturized and low-cost of many transducers (as pressure sensor, accelerometer, gyroscope etc.).The MEMS silicon microphone has begun industrialization, in the application of high-end mobile phone, replaces gradually traditional electret capacitor microphone.
The MEMS microphone mainly still adopts capacitive principle, is comprised of a vibration film and back pole plate, and the spacing of several microns is arranged between vibration film and back pole plate, forms capacitance structure.After high-sensitive vibration film is experienced outside audio frequency sound pressure signal, change the distance between vibration film and back pole plate, thereby form capacitance variations.Connect cmos amplifier after the MEMS microphone and capacitance variations is changed into the variation of voltage signal, then become electricity output after amplifying.
People's voice sound pressure signal is very faint, and vibration film must be very sensitive.Vibrating membrane adopts conventional semiconducter process-deposit to obtain usually, and material can adopt multiple or multilayer material obtains (such as doped polycrystalline silicon, metal and silicon nitride composite membrane etc.).Due to thermal coefficient of expansion difference and the high-temperature technology of material, the vibration film after preparation has residual stress in various degree, has greatly affected the sensitivity of vibration film.So, when using polysilicon as vibration film, generally can adopt additional anneal technique afterwards in preparation, regulate residual stress and drop to minimum; If as vibration film, reduce residual stress by the ratio between conditioned reaction gas with silicon nitride in the preparation.But adopt this method little to the effect that reduces residual stress, and repeatability is bad, realizes also comparatively complicated.In addition, also can adopt the mechanical structure that changes vibration film, general plate vibration film is changed into the line film, epistasis, or cut small groove on vibration film, reduce thereby reach the purpose that residual Ying Li ﹑ increases sensitivity.But the method that changes the vibration film structure can cause complicated process of preparation, increases cost, reduces yield.
Back pole plate also has except forming electric capacity with vibration film the frequency band of controlling microphone, reduces the functions such as acoustic noise.It need to have certain rigidity, can be because of vibration or the acoustic pressure deformation of outside.In addition, it is the perforation of several microns to thousands of diameters that general design also needs to prepare on back pole plate hundreds of, is used for regulating the frequency band of microphone and reduces acoustic noise.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of MEMS silicon microphone that adopts porous SOI Si-Si bonding and preparation method thereof is provided, with simplified manufacturing technique, and yield and the sensitivity that can improve capacitance type minitype silicon microphone.
The present invention is achieved in that a kind of MEMS silicon microphone and manufacture method thereof that adopts porous SOI Si-Si bonding, comprise that the porous back pole plate is silica-based and be positioned at the monocrystalline silicon vibrating diaphragm of the silica-based top of described porous back pole plate, it is characterized in that: the silica-based and monocrystalline silicon vibrating diaphragm of described porous back pole plate is bonded to one as the two-plate of microphone electric capacity through Si-Si bonding process; The manufacture method of described microphone comprises the steps:
A, adopt the good back pole plate of conductivity silica-based;
B, DRIE etches some blind holes on above-mentioned back pole plate is silica-based, forms the porous back pole plate silica-based, and the blind hole that etches is the sound hole of microphone;
C, thermal oxidation goes out one deck silicon oxide layer on above-mentioned porous back pole plate is silica-based;
D, provide the good monocrystalline silicon of conductivity as the vibration film substrate, and thermal oxidation go out one deck silicon oxide layer on this substrate;
E, with above-mentioned vibration film substrate and back pole plate Bonded on Silicon Substrates;
F, above-mentioned vibration film substrate attenuation is become vibration film, i.e. the monocrystalline silicon vibrating diaphragm;
G, the above-mentioned vibration film of plasma etching, etching runs through vibration film, and the silica below etched portions forms the outline of required small convex pillar;
H, plasma etching run through above-mentioned vibration film and under silica, expose the face of the silica-based upper deposit metal electrodes of back pole plate;
I, in above-mentioned device surface LPCVD doped polycrystalline silicon;
Polysilicon and the silica at the silica-based back side of back pole plate in j, the above-mentioned device of removal;
K, at above-mentioned device upper surface depositing metal layers;
L, etching run through above-mentioned device metal level and under polysilicon, form metal electrode and small convex pillar;
M, at above-mentioned device upper surface deposition one deck PECVD silica;
N, in DRIE etching back of the body chamber, the porous back pole plate silica-based back side of above-mentioned device until the silica of porous back pole plate on silica-based, back of the body chamber be positioned at the sound hole under;
O, wet method are removed the silica that in above-mentioned device, PECVD generates;
P, wet method remove silica between the silica-based back of the body chamber of porous back pole plate in above-mentioned device and sound hole and the silica of vibration film oscillating component below, discharge vibration film.
The MEMS silicon microphone of the employing porous SOI Si-Si bonding that the inventive method makes is characterized in that: the porous back pole plate is silica-based all to conduct electricity well with the monocrystalline silicon vibrating diaphragm, as the two-plate of microphone electric capacity; Deposit the back pole plate polysilicon on the porous back pole plate is silica-based, deposit the back pole plate metal electrode on the back pole plate polysilicon, the back pole plate metal electrode is through back pole plate polysilicon and the silica-based electrical connection of porous back pole plate; The porous back pole plate is silica-based is provided with sound hole and back of the body chamber, and sound hole and back of the body chamber communicate; The monocrystalline silicon vibrating diaphragm is provided with small convex pillar, and the material of small convex pillar is polysilicon and metal level, and small convex pillar is avoided monocrystalline silicon vibrating diaphragm and the silica-based adhesive of porous back pole plate; Deposit the vibrating diaphragm polysilicon on the monocrystalline silicon vibrating diaphragm, deposit the vibrating diaphragm metal electrode on the vibrating diaphragm polysilicon, the vibrating diaphragm metal electrode is electrically connected to through vibrating diaphragm polysilicon and monocrystalline silicon vibrating diaphragm; Vibrating diaphragm metal electrode and back pole plate electrode all adopt Al/Cu alloy and TiN material, are respectively the output signal exit of microphone electric capacity two-plate, are used for realizing being electrically connected to the cmos signal amplifying circuit; Monocrystalline silicon vibrating diaphragm and the porous back pole plate is silica-based is bonded to one through Si-Si bonding process, the monocrystalline silicon vibrating diaphragm is supported by silicon oxide layer and is suspended from porous back pole plate silica-based top, be provided with air gap between monocrystalline silicon vibrating diaphragm and porous back pole plate are silica-based, the porous back pole plate is silica-based, monocrystalline silicon vibrating diaphragm and air gap form capacitance structure.Form after described monocrystalline silicon vibrating diaphragm utilizes the monocrystalline silicon piece attenuate, described monocrystalline silicon vibrating diaphragm thickness is 2～3 microns.Air gap between described monocrystalline silicon vibrating diaphragm and porous back pole plate are silica-based is formed by the wet etching silica.
According to technical scheme of the present invention, MEMS silicon microphone of the present invention, the silica-based thickness of described porous back pole plate is 400 ~ 450 μ m, and its conduction is as a utmost point of electric capacity, and vibration film (being the monocrystalline silicon vibrating diaphragm) conduction is as another utmost point of electric capacity; The porous back pole plate is silica-based is provided with tens sound holes, described sound hole be positioned at vibration film under, the aperture is 40 μ m left and right; The sound hole has back of the body chamber, makes the sound hole more easily connect the porous back pole plate silica-based; Vibration film is positioned at the top in sound hole and covers whole sound hole face, vibration film is provided with small convex pillar, described small convex pillar can be reduced in the possibility that in vibrating diaphragm wet chemical release process process, vibration film and back pole plate are pulled together, and vibration film obtains after by the monocrystalline silicon piece attenuate; Vibration film by silica be supported on back pole plate silica-based on, described silica can be realized vibration film and the silica-based electric insulation of back pole plate simultaneously, and the air gap degree of depth of silica-based of vibration film and back pole plate is also determined by this silicon oxide thickness; The silica-based upper metal pad that all deposits of vibration film and back pole plate, metal pad are used for realizing being electrically connected to the cmos signal amplifying circuit.
The invention has the beneficial effects as follows: the silica-based vibration film that is provided with monocrystalline silicon of porous back pole plate of the present invention, i.e. monocrystalline silicon vibrating diaphragm, it is by Si-Si bonding method and porous back pole plate Bonded on Silicon Substrates, the silica-based formation capacitance structure of the monocrystalline silicon vibrating diaphragm of conduction and porous back pole plate; The monocrystalline silicon vibrating diaphragm of conduction is that the monocrystalline silicon piece attenuate forms, and its conductivity is good, and as a utmost point of electric capacity, and its residual stress is little and high conformity, thereby can improve sensitivity and the yield of microphone; The monocrystalline silicon vibrating diaphragm is provided with small convex pillar, and the possibility of monocrystalline silicon vibrating diaphragm and the silica-based adhesive of porous back pole plate when small convex pillar can be reduced in monocrystalline silicon vibrating diaphragm wet chemical release process process and use further improves the yield of microphone; The silica-based conductivity of porous back pole plate is good, and as another utmost point of electric capacity, the porous back pole plate is silica-based is provided with the sound hole.When sound acts on the monocrystalline silicon vibrating diaphragm, thereby changing by detection monocrystalline silicon vibrating diaphragm the capacitance variations that causes, external cmos circuit exports corresponding voice signal.The production technology that the inventive method makes microphone is simple, highly sensitive, cost is low, high conformity, yield are high.
Description of drawings
Fig. 1 is the structural representation of MEMS silicon microphone one side of the present invention.
Fig. 2 is the structural representation of MEMS silicon microphone opposite side of the present invention.
Fig. 3 is the sectional structure schematic diagram of MEMS silicon microphone of the present invention.
Fig. 4 be in the inventive method on back pole plate is silica-based schematic cross-section behind formation sound hole.
Fig. 5 is the schematic cross-section after the back pole plate silicon substrate surface generates silica in the inventive method.
Fig. 6 is the schematic cross-section after vibrating diaphragm silicon substrate surface generation silica in the inventive method.
Fig. 7 forms the schematic cross-section of device after the silica-based and silica-based Si-Si bonding of vibrating diaphragm of back pole plate in the inventive method.
Fig. 8 is to be schematic cross-section after vibrating diaphragm with the silica-based attenuate of vibrating diaphragm in the inventive method.
Fig. 9 is the schematic cross-section that etches on vibrating diaphragm and silica in the inventive method for the hole of deposition small convex pillar.
Figure 10 is the schematic cross-section that in the inventive method, etching vibrating diaphragm and silica expose the face of the silica-based upper deposit metal electrodes of back pole plate.
Figure 11 is at the schematic cross-section of device surface LPCVD doped polycrystalline silicon in the inventive method.
Figure 12 is the polysilicon at the silica-based back side of removal devices back pole plate in the inventive method and the schematic cross-section after silica.
Figure 13 is at the schematic cross-section of device upper surface depositing metallic films in the inventive method.
Figure 14 is the schematic cross-section that in the inventive method, etching metal film and polysilicon obtain electrode and projection.
Figure 15 deposits the schematic cross-section of one deck PECVD silica at the device upper surface in the inventive method.
Figure 16 goes out to carry on the back the schematic cross-section in chamber at the device back-etching in the inventive method.
Figure 17 removes the schematic cross-section of the silica of upper surface in the inventive method.
Figure 18 removes silica between back pole plate silica-based back of the body chamber and sound hole and the silica of vibration film oscillating component below in the inventive method, discharge the schematic cross-section of vibrating diaphragm.
In figure: 1, the porous back pole plate is silica-based; 2, monocrystalline silicon vibrating diaphragm; 3, sound hole; 4, back of the body chamber; 5, air gap; 6, back pole plate metal electrode; 7, back pole plate polysilicon; 8, small convex pillar; 9, insulating medium layer; 10, vibrating diaphragm metal electrode; 11, vibrating diaphragm polysilicon.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
1～accompanying drawing 18 with reference to the accompanying drawings, the present invention includes that the porous back pole plate is silica-based 1, monocrystalline silicon vibrating diaphragm 2, sound hole 3, back of the body chamber 4, air gap (polar plate spacing) 5, back pole plate metal electrode 6, back pole plate polysilicon 7, small convex pillar 8, insulating medium layer (being silicon oxide layer) 9, vibrating diaphragm metal electrode 10, vibrating diaphragm polysilicon 11.
With reference to the accompanying drawings 3, MEMS silicon microphone of the present invention comprises the porous back pole plate and is positioned at monocrystalline silicon vibrating diaphragm 2 on back pole plate and the supporter of monocrystalline silicon vibrating diaphragm.In the present invention, back pole plate comprises that the porous back pole plate is silica-based 1, and porous back pole plate silica-based 1 is provided with sound hole 3 and back of the body chamber 4.Sound hole 3 be uniformly distributed in the back of the body chamber 4 the top, and with the back of the body chamber 4 communicate.LPCVD doped polycrystalline silicon on porous back pole plate silica-based 1 forms back pole plate polysilicon 7, and back pole plate polysilicon 7 is doped polycrystalline silicon, and conductivity is good.Be coated with back pole plate metal electrode 6 on back pole plate polysilicon 7, back pole plate metal electrode 6 is electrically connected to porous back pole plate silica-based 1 by back pole plate polysilicon 7.The aperture in sound hole 3 is 40 microns left and right, is 400～450 microns as silica-based 1 thickness of the porous back pole plate of microphone back pole plate; The size in sound hole, quantity and position are set on demand, are as the criterion can access required clever quick degree ﹑ bandwidth and extremely low acoustic noise.
Monocrystalline silicon vibrating diaphragm 2 is formed by the monocrystalline silicon attenuate, and monocrystalline silicon vibrating diaphragm 2 conductivity are good, as a utmost point of microphone electric capacity.Monocrystalline silicon vibrating diaphragm 2 is supported by insulating medium layer (being silicon oxide layer) 9, be suspended on the top in sound hole 3, and silica-based 1 of porous back pole plate forms air gap 5.The thickness of silicon oxide layer 9 has determined the degree of depth of air gap 5, and the insulation property of simultaneous oxidation silicon layer 9 have guaranteed the electric insulation of monocrystalline silicon vibrating diaphragm 2 and porous back pole plate silica-based 1.Monocrystalline silicon vibrating diaphragm 2 is provided with small convex pillar 8, and small convex pillar can reduce the possibility that monocrystalline silicon vibrating diaphragm 2 and porous back pole plate silica-based 1 are pulled together.The material of small convex pillar 8 is polysilicon and metal level, with the electrode synchronous forming.The electrode of monocrystalline silicon vibrating diaphragm 2 partly has polysilicon 11, and polysilicon 11 is doped polycrystalline silicon, and conductivity is good.Be coated with vibrating diaphragm metal electrode 10 on polysilicon 11, vibrating diaphragm metal electrode 10 is electrically connected to monocrystalline silicon vibrating diaphragm 2 by vibrating diaphragm polysilicon 11.The material of the metal level on back pole plate metal electrode 6, vibrating diaphragm metal electrode 10 and small convex pillar is Al/Cu alloy+TiN, adopts first depositing metal layers, then dry etching goes out the capable one-tenth of required figure.
Fig. 4～accompanying drawing 18 with reference to the accompanying drawings, and the present invention adopts the manufacture method of the MEMS silicon microphone of porous SOI Si-Si bonding to comprise following processing step:
A, provide the good back pole plate of conductivity silica-based, the silica-based utmost point as electric capacity of back pole plate, its thickness is 400～450 microns;
B, on above-mentioned back pole plate is silica-based 50～100 microns dark blind holes of DRIE etching (be sound hole 3), form the porous back pole plate silica-based 1, the blind hole that etches is the sound hole of microphone.As shown in Figure 4: blind hole is used the DRIE etching, and the degree of depth is 50～100 microns, and the aperture of blind hole is 40 microns left and right;
C, on above-mentioned porous back pole plate silica-based 1 the about silicon oxide layer 12 of 1 micron of thermal oxidation.As shown in Figure 5: silicon oxide layer 12 is used for porous back pole plate silica-based 1 Si-Si bonding silica-based with vibrating diaphragm, and the stop-layer of this silicon oxide layer can be as following DRIE etching back of the body chamber 4 time;
D, provide the good vibrating diaphragm of conductivity silica-based, and the about silicon oxide layer 13 of 1.5 micron thickness of thermal oxidation.As shown in Figure 6: silicon oxide layer 13 is silica-based and silica-based 1 Si-Si bonding of back pole plate for vibrating diaphragm; Silicon oxide layer 12 in silicon oxide layer 13 and step c synthesizes silicon oxide layer 9 after Si-Si bonding;
E, form device with silica-based 1 Si-Si bonding of back pole plate with vibrating diaphragm is silica-based.As shown in Figure 7: adopt Si-Si bonding process to be integral with the back pole plate Bonded on Silicon Substrates vibrating diaphragm is silica-based;
F, with the silica-based attenuate of the vibrating diaphragm on above-mentioned device.As shown in Figure 8: the silica-based attenuate of the vibrating diaphragm on above-mentioned device is formed vibration film, and namely the monocrystalline silicon vibrating diaphragm 2, and the thickness of monocrystalline silicon vibrating diaphragm 2 is 2～3 microns;
G, etch aperture 14 on monocrystalline silicon vibrating diaphragm 2 and silicon oxide layer 9.As shown in Figure 9: dry etching aperture on above-mentioned monocrystalline silicon vibrating diaphragm 2, aperture runs through monocrystalline silicon vibrating diaphragm 2, the silicon oxide layer 9 that the position dry etching of aperture exposes on monocrystalline silicon vibrating diaphragm 2, approximately 1.5 microns of the degree of depth of etching oxidation silicon layer 9, the profile of the aperture 14 of etching is the outline of small convex pillar 8;
H, etching runs through monocrystalline silicon vibrating diaphragm 2 and silicon oxide layer 9 subregions on above-mentioned device, exposes porous back pole plate silica-based upper zone for polysilicon 7 and back pole plate metal electrode 6 on the deposition back pole plate.As shown in Figure 10: dry etching runs through the subregion of above-mentioned monocrystalline silicon vibrating diaphragm 2, etching runs through the silicon oxide layer 9 of its below simultaneously, expose the backplate area for deposition back pole plate polysilicon 7 and back pole plate metal electrode 6, etching technics while etching has formed the outline of monocrystalline silicon vibrating diaphragm 2;
I, at above-mentioned device surface LPCVD doped polysilicon layer 15.As shown in Figure 11: polysilicon layer thickness is 0.5 micron, the polysilicon good conductivity;
J, remove polysilicon and the silica at the above-mentioned device back side.As shown in Figure 12: remove polysilicon layer and the thermal oxidation silicon layer at the above-mentioned device back side, utilize photoresist to do front protecting, dry etching is removed polysilicon layer, and dry method or wet method are removed silicon oxide layer, and dry method is plasma etching, and wet etching liquid is BOE;
K, at above-mentioned device front sputtering sedimentation metal level 16.As shown in Figure 13: at above-mentioned device front sputtering sedimentation metal level 16, the material of metal level 16 is Al/Cu alloy and TiN, TiN covers Al/Cu alloy surface protection Al/Cu alloy and is not corroded, and the thickness of Al/Cu alloy is 2 microns, and the thickness of TiN is 0.1 micron;
L, at above-mentioned device front etch polysilicon layer 15 and metal level 16.As shown in Figure 14: utilize photoresist to do mask, the RIE etching runs through metal level 16, plasma etching or RIE etching run through polysilicon layer 15, form on back pole plate metal electrode 6, back pole plate polysilicon 11 on polysilicon 7, small convex pillar 8, vibrating diaphragm metal electrode 10, vibrating diaphragm after etching, back pole plate metal electrode 6 is connected with the vibrating diaphragm metal electrode and is used for being connected with external cmos circuit;
M, at the positive PECVD silicon oxide layer 17 of above-mentioned device.As shown in Figure 15: silicon oxide layer 17 thickness are 1 micron, the protective layer in front during as etching back of the body chamber 4, and the PECVD silicon oxide layer is more loose, more easily removes when wet method is removed;
N, in above-mentioned device back side DRIE etching back of the body chamber 4.As shown in Figure 16: utilize DRIE technique etching back of the body chamber 4, back of the body chamber 4 be positioned at sound hole 3 under, approximately 300 ~ 350 microns of the degree of depth in back of the body chamber 4, etching stopping when running into thermal oxidation silicon layer 12 during the DRIE etching;
The silicon oxide layer 17 of o, the above-mentioned device of removal.As shown in Figure 17: utilize wet etching to remove silicon oxide layer 17, wet etching liquid is BOE, and PECVD silicon oxide layer 17 is more loose, so when wet method is removed, thermal oxidation silicon layer 15 can not be removed simultaneously fully;
P, remove silicon oxide layer 12 and the silicon oxide layer 13 of part directly over back of the body chamber 4.As shown in Figure 18: silicon oxide layer 12 and the silicon oxide layer 13 directly over the chamber carried on the back in the wet method removal; form air gap 5; back of the body chamber 4 communicates with sound hole 3; form silicon oxide layer 9 after etching; silicon oxide layer 9 supports monocrystalline silicon vibrating diaphragms 2 and is suspended from porous back pole plate silica-based 1 top; wet etching liquid is BOE; during etching, the device front utilizes the thick photoresist protection; the thickness of photoresist is more than 15 microns; after adopting thick glue can prevent etching, monocrystalline silicon vibrating diaphragm 2 is drawn onto on porous back pole plate silica-based 1; thick glue can utilize acetone and dry method to remove, and discharges monocrystalline silicon vibrating diaphragm 2.
During work, silica-based 1 of the monocrystalline silicon vibrating diaphragm 2 of MEMS silicon microphone of the present invention and porous back pole plate form capacitance structure.When there was sound the outside, sound can produce active force to monocrystalline silicon vibrating diaphragm 2, and the surface of monocrystalline silicon vibrating diaphragm 2 is subject to active force can produce corresponding deformation.When deformation occured monocrystalline silicon vibrating diaphragm 2, corresponding variation also can occur with the capacitance structure of silica-based 1 formation of porous back pole plate in monocrystalline silicon vibrating diaphragm 2, can detect corresponding voice signal by external CMOS ASIC signal amplification circuit.
Back pole plate of the present invention realizes on porous back pole plate silica-based 1, and the diameter in sound hole 3 is designed to 40 microns left and right, sound hole 3 communicates with air by back of the body chamber 4, reduced the process costs in etching sound hole 3.Monocrystalline silicon thin film 2 is formed by the single crystal silicon substrate attenuate, has simplified manufacture craft and has reduced the stress of vibrating membrane, the consistency that has improved product and yield.The two poles of the earth of electric capacity are taken on by porous back pole plate silica-based 1 and monocrystalline silicon vibrating diaphragm 2, have further simplified technique.Silicon oxide layer 9 has guaranteed the electric insulation of monocrystalline silicon vibrating diaphragm 2 and porous back pole plate silica-based 1, simultaneous oxidation silicon layer 9 support monocrystalline silicon vibrating diaphragms 2 be suspended from back pole plate silica-based on, the thickness of air gap 5 has the thickness of silicon oxide layer 9 to determine, air gap 5 is obtained by etching oxidation silicon 12 and silica 13, and technique is simple.Monocrystalline silicon vibrating diaphragm 2 is provided with small convex pillar 8, and small convex pillar 8 can reduce the possibility that monocrystalline silicon vibrating diaphragm 2 and porous back pole plate silica-based 1 are pulled together.Technique of the present invention all adopts maturation process, and technique is simple.Sensitivity of microphone of the present invention is high, high conformity and to produce yield high, and this microphone can be packaged as a whole with ASIC, uses SMT technique to carry out follow-up printed circuit board (PCB) and mounts.
Claims (4)
1. manufacture method that adopts the MEMS silicon microphone of porous SOI Si-Si bonding, comprise porous back pole plate silica-based (1) and be positioned at the monocrystalline silicon vibrating diaphragm (2) of the silica-based top of described porous back pole plate, it is characterized in that: described porous back pole plate silica-based (1) and monocrystalline silicon vibrating diaphragm (2) are bonded to one as the two-plate of microphone electric capacity through Si-Si bonding process; The manufacture method of described microphone comprises the steps:
A, adopt the good back pole plate of conductivity silica-based;
B, DRIE etches some blind holes on above-mentioned back pole plate is silica-based, and this blind hole is the sound hole of microphone;
C, thermal oxidation goes out one deck silicon oxide layer on above-mentioned back pole plate is silica-based;
D, provide the good monocrystalline silicon of conductivity as the vibration film substrate, and thermal oxidation go out one deck silicon oxide layer on this substrate;
E, with above-mentioned vibration film substrate and back pole plate Bonded on Silicon Substrates;
F, above-mentioned vibration film substrate attenuation is become vibration film;
G, the above-mentioned vibration film of plasma etching, etching runs through vibration film, and the silica below etched portions forms the outline of required small convex pillar;
H, plasma etching run through above-mentioned vibration film and under silica, expose the face of the silica-based upper deposit metal electrodes of back pole plate;
I, in above-mentioned device surface LPCVD doped polycrystalline silicon;
Polysilicon and the silica at the silica-based back side of back pole plate in j, the above-mentioned device of removal;
K, at above-mentioned device upper surface depositing metal layers;
L, etching run through above-mentioned device metal level and under polysilicon, form metal electrode and small convex pillar;
M, at above-mentioned device upper surface deposition one deck PECVD silica;
N, in the back pole plate of above-mentioned device silica-based back side DRIE etching back of the body chamber until the silica of back pole plate on silica-based, back of the body chamber be positioned at the sound hole under;
O, wet method are removed the silica that in above-mentioned device, PECVD generates;
P, wet method remove the silica of the silica between the hole of back pole plate silica-based back of the body chamber and sound in above-mentioned device and vibration film oscillating component below, discharge vibration film.
2. the MEMS silicon microphone of an employing porous SOI Si-Si bonding that is obtained by the described manufacture method of claim 1, it is characterized in that: porous back pole plate silica-based (1) and monocrystalline silicon vibrating diaphragm (2) all conduct electricity well, as the two-plate of microphone electric capacity; The porous back pole plate deposits back pole plate polysilicon (7) on silica-based (1), deposits back pole plate metal electrode (6) on back pole plate polysilicon (7), and back pole plate metal electrode (6) is electrically connected to through back pole plate polysilicon (7) and porous back pole plate silica-based (1); Porous back pole plate silica-based (1) is provided with sound hole (3) and carries on the back chamber (4), and sound hole (3) and back of the body chamber (4) communicate; Monocrystalline silicon vibrating diaphragm (2) is provided with small convex pillar (8), and the material of small convex pillar (8) is polysilicon and metal level, and small convex pillar (8) is avoided the adhesive of monocrystalline silicon vibrating diaphragm (2) and porous back pole plate silica-based (1); Deposit vibrating diaphragm polysilicon (11) on monocrystalline silicon vibrating diaphragm (2), deposit vibrating diaphragm metal electrode (10) on vibrating diaphragm polysilicon (11), vibrating diaphragm metal electrode (10) is electrically connected to through vibrating diaphragm polysilicon (11) and monocrystalline silicon vibrating diaphragm (2); Vibrating diaphragm metal electrode (10) and back pole plate electrode (6) all adopt Al/Cu alloy and TiN material, are respectively the output signal exit of microphone electric capacity two-plate, are used for realizing being electrically connected to the cmos signal amplifying circuit; Monocrystalline silicon vibrating diaphragm (2) and porous back pole plate silica-based (1) are bonded to one through Si-Si bonding process, monocrystalline silicon vibrating diaphragm (2) is supported the top that is suspended from porous back pole plate silica-based (1) by silicon oxide layer (9), monocrystalline silicon vibrating diaphragm (2) and porous back pole plate are provided with air gap (5) between silica-based (1), and porous back pole plate silica-based (1), monocrystalline silicon vibrating diaphragm (2) and air gap (5) form capacitance structure.
3. the MEMS silicon microphone of described employing porous SOI Si-Si bonding according to claim 2, it is characterized in that: form after described monocrystalline silicon vibrating diaphragm (2) utilizes the monocrystalline silicon piece attenuate, described monocrystalline silicon vibrating diaphragm (2) thickness is 2～3 microns.
4. the MEMS silicon microphone of employing porous SOI Si-Si bonding according to claim 3, it is characterized in that: the air gap (5) between described monocrystalline silicon vibrating diaphragm (2) and porous back pole plate silica-based (1) is formed by the wet etching silica.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6870939B2 (en) * | 2001-11-28 | 2005-03-22 | Industrial Technology Research Institute | SMT-type structure of the silicon-based electret condenser microphone |
| US20100090298A1 (en) * | 2008-10-09 | 2010-04-15 | United Microelectronics Corp. | Mems diaphragm |
| CN102333254A (en) * | 2011-09-13 | 2012-01-25 | 华景传感科技（无锡）有限公司 | MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same |
| CN102611975A (en) * | 2012-01-20 | 2012-07-25 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
-
2013
- 2013-02-22 CN CN201310056813.8A patent/CN103139691B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6870939B2 (en) * | 2001-11-28 | 2005-03-22 | Industrial Technology Research Institute | SMT-type structure of the silicon-based electret condenser microphone |
| US20100090298A1 (en) * | 2008-10-09 | 2010-04-15 | United Microelectronics Corp. | Mems diaphragm |
| CN102333254A (en) * | 2011-09-13 | 2012-01-25 | 华景传感科技（无锡）有限公司 | MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same |
| CN102611975A (en) * | 2012-01-20 | 2012-07-25 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
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| CN103420327A (en) * | 2013-08-13 | 2013-12-04 | 中国电子科技集团公司第十三研究所 | Interface protecting method applied to graphical SOI (silicon on insulator) material etching process |
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| CN104671190B (en) * | 2013-11-27 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | The guard method of device surface |
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