CN102333254A - MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same - Google Patents
MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same Download PDFInfo
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- CN102333254A CN102333254A CN201110269419A CN201110269419A CN102333254A CN 102333254 A CN102333254 A CN 102333254A CN 201110269419 A CN201110269419 A CN 201110269419A CN 201110269419 A CN201110269419 A CN 201110269419A CN 102333254 A CN102333254 A CN 102333254A
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Abstract
The invention discloses a MEMS (Micro Electro Mechanical System) silicon microphone longitudinally integrated with CMOS (Complementary Metal Oxide Semiconductor) circuit, and a manufacturing method for the same. The MEMS silicon microphone comprises a back polar plate silicon substrate and a diaphragm silicon substrate; the back polar plate silicon substrate is provided with the CMOS circuit, an electrical insulating layer is deposited on the surface of the back polar plate silicon substrate where the CMOS circuit is arranged correspondingly, the electrical insulating layer is provided with a metal bonding layer, and the metal bonding layer is electrically connected with a connecting end of the CMOS circuit; the back polar plate silicon substrate is provided with a plurality of sound holes; the diaphragm silicon substrate is provided with a diaphragm on a surface where the back polar plate silicon substrate is connected, the diaphragm silicon substrate is internally provided with a pit penetrating through the diaphragm silicon substrate, the pit is located directly over the sound holes, and the pit and the sound holes are distributed correspondingly; the diaphragm silicon substrate is mounted on the metal bonding layer in a manner of bonding corresponding to the surface on which the diaphragm is located, the diaphragm is electrically connected with the CMOS circuit through the metal bonding layer, and the diaphragm is in clearance fit with a lower electrode. The MEMS silicon microphone can be integrated with a CMOS circuit chip vertically, so that production technology and packaging structure of the MEMS silicon microphone both can be simplified, production cost can be reduced, and reliability of components can be enhanced.
Description
Technical field
The present invention relates to a kind of silicon microphone and preparation method thereof, MEMS silicon microphone that especially a kind of and cmos circuit are vertically integrated and preparation method thereof belongs to the technical field of silicon microphone.
Background technology
Mike's wind energy is converted into the corresponding signal of telecommunication to people's voice signal, is widely used in mobile phone, computer, telephone set, camera and video camera etc.Traditional electret capacitor microphone adopts Teflon as vibration film, can not bear the high temperature at nearly 300 degree of printed circuit board (PCB) solder reflow process, thereby can only separate with the assembling of integrated circuit, and hand assembled has increased production cost greatly separately.
The development of nearly 30 years MEMS (Microelectromechanical Systems) technology and technology; Particularly based on the technological development of silicon MEMS; Realized the microminiaturized and low-cost of many transducers (like pressure sensor, accelerometer, gyroscope etc.).The MEMS silicon microphone has begun industrialization, in the application of high-end mobile phone, replaces traditional electret capacitor microphone gradually.But; Because complicated process of preparation, the production cost of MEMS silicon microphone is compared also quite high with electret microphone, and particularly the production technology of MEMS silicon microphone chip and CMOS integrated circuit are incompatible; The feasible amplifier chip that matches with microphone chip must separate and prepare; And microphone chip is connected need employing bonding wire bonding with the signal of telecommunication of amplifier chip, has further increased production cost, has reduced reliability simultaneously.
The MEMS microphone mainly still adopts capacitive principle, is made up of a vibration film and back pole plate, and one several microns spacing is arranged between vibration film and the back pole plate, forms capacitance structure.After high-sensitive vibration film is experienced outside audio frequency sound pressure signal, change the distance between vibration film and back pole plate, thereby form capacitance variations.Connect cmos amplifier behind the MEMS microphone and change into the variation of voltage signal to capacitance variations, become electricity output after amplifying again.
People's voice sound pressure signal is very faint, and vibration film must be very sensitive.The material of general vibration film is polysilicon or silicon nitride, and thickness is looked the size of vibration film and different about 0. 5 to two microns.Because material coefficient of thermal expansion coefficient difference and high-temperature technology, the vibration film after the preparation has residual stress in various degree, has influenced the sensitivity of vibration film greatly.So, during as vibration film, after preparation, generally can adopt additional anneal technology with polysilicon, regulate residual stress and drop to minimum; If as vibration film, reduce residual stress through the ratio between conditioned reaction gas in the preparation with silicon nitride.Simultaneously, also can adopt the mechanical structure that changes vibration film, change general plate vibration film into the line film, epistasis, or on vibration film, cut small groove, thus reach the purpose that reduces residual stress, increases sensitivity.But the method that changes the vibration film structure can cause complicated process of preparationization, increases cost, reduces yield.
Back pole plate also has the frequency band of control microphone except forming the electric capacity with vibration film, reduces functions such as acoustic noise.It need have certain rigidity, can be because of the vibration or the acoustic pressure deformation of outside.In addition, general design also need on back pole plate preparation hundreds of to thousands of diameters be several microns perforation, the frequency band that is used for regulating microphone with reduce acoustic noise.Because the restriction of pitting corrosion preparation technology's depth-to-width ratio, the thickness of back pole plate generally can be above tens microns.
Summary of the invention
The objective of the invention is to overcome the deficiency that exists in the prior art; Vertically integrated MEMS silicon microphone of a kind of and cmos circuit and preparation method thereof is provided, and it can be vertical integrated with the cmos circuit chip, simplifies production technology and encapsulating structure thereof; Reduce production costs the reliability of enhance device.
According to technical scheme provided by the invention, the vertical integrated MEMS silicon microphone of said and cmos circuit comprises that back pole plate is silica-based and it is silica-based to be positioned at the silica-based top of said back pole plate vibrating diaphragm; Said back pole plate is silica-based to be gone up corresponding to being provided with cmos circuit with the silica-based opposite side that links to each other of vibrating diaphragm; The silica-based correspondence of back pole plate is provided with on the surface of cmos circuit and is deposited with electric insulation layer; Said electric insulation layer is provided with the metal bonding layer, and said metal bonding layer is electrically connected with the link of cmos circuit; The silica-based hole that is provided with some of back pole plate, said sound hole be positioned at vibrating diaphragm silica-based under, and to connect back pole plate silica-based from the surface of metal bonding layer to extending below in the sound hole, back pole plate is silica-based to form bottom electrode corresponding to the metal bonding layer that hole surface is set; Vibrating diaphragm is silica-based corresponding to being provided with conductive diaphragm with the silica-based surface that links to each other of back pole plate, be provided with in vibrating diaphragm is silica-based to connect the silica-based dell of vibrating diaphragm, said dell be positioned at hole directly over, and dell and the corresponding distribution in hole; Vibrating diaphragm is silica-based to be installed on the metal bonding layer corresponding to the surface bond that vibrating diaphragm is set, and conductive diaphragm is electrically connected conductive diaphragm and bottom electrode matched in clearance through the metal bonding layer with cmos circuit.
The aperture in said sound hole is 50～100 μ m; The silica-based thickness of said back pole plate is 300～500 μ m.Said electric insulation layer comprises first insulating medium layer that is positioned at the back pole plate silicon substrate surface and is positioned at second insulating medium layer on said first insulating medium layer; Said first insulating barrier is a silicon nitride layer, and second insulating medium layer is a silicon dioxide layer.
The link of said cmos circuit comprises input and output, and the contiguous vibrating diaphragm of said input is silica-based; Input and output are isolated through electric insulation layer.
Said conductive diaphragm comprise grow in vibrating diaphragm on silica-based the insulation support membrane and be deposited on the vibrating diaphragm body thin film on the said insulation support membrane, and said vibrating diaphragm body thin film is removed residual stress through high annealing.
The vertical integrated MEMS silicon microphone preparation method of a kind of and cmos circuit, said MEMS silicon microphone preparation method comprises the steps:
A, provide back pole plate silica-based with cmos circuit;
B, silica-based corresponding to the surface deposition electric insulation layer that forms cmos circuit at above-mentioned back pole plate, said electric insulation layer is covered in the silica-based surface of back pole plate;
C, optionally shelter with etching and be covered in the electric insulation layer on the cmos circuit; Cmos circuit corresponding directly over form input link slot and output link slot, said input link slot is isolated with the output link slot through the electric insulation layer that is positioned at the cmos circuit center;
D, silica-based said metal level is covered on the electric insulation layer corresponding to the surface deposition metal level that electric insulation layer is set at above-mentioned back pole plate, and is filled in input link slot and the output link slot, and on back pole plate is silica-based, forms metal bonding layer and bottom electrode;
E, bore a hole corresponding to the surface that bottom electrode is set in that above-mentioned back pole plate is silica-based, on back pole plate is silica-based, form some holes, said sound hole is silica-based to extending below and connect back pole plate from the surface of bottom electrode;
F, provide vibrating diaphragm silica-based, and etch shallow hole in the silica-based center of vibrating diaphragm, said shallow hole is connected with the shallow slot of the silica-based end of vibrating diaphragm;
G, the insulation support layer of on above-mentioned vibrating diaphragm is silica-based, growing, said insulation support layer covers silica-based corresponding two surfaces of vibrating diaphragm;
H, on the silica-based insulation support layer of above-mentioned vibrating diaphragm deposit vibrating diaphragm body thin film, said vibrating diaphragm body thin film covers the insulation support layer on silica-based two surfaces of vibrating diaphragm;
I, remove that vibrating diaphragm is silica-based to be gone up corresponding to the vibrating diaphragm body thin film that shallow hole opposite side surface is set;
J, on two silica-based surfaces of above-mentioned vibrating diaphragm the deposit mask layer, said mask layer is covered in the silica-based corresponding surface of vibrating diaphragm;
K, to remove above-mentioned vibrating diaphragm silica-based corresponding to the mask layer that shallow hole one side surface is set, and keeps the mask layer of the silica-based another side of vibrating diaphragm;
Mask layer and insulation support layer on l, the etching vibrating diaphragm silicon substrate surface keep the mask layer and the insulation support layer that are positioned at the silica-based end edge of vibrating diaphragm, on vibrating diaphragm is silica-based, form etching window; Said etching window extends to the silica-based surface of vibrating diaphragm from the mask layer surface;
M, utilize above-mentioned etching window to the silica-based etching of carrying out of vibrating diaphragm, obtain being positioned at the silica-based dell of vibrating diaphragm, it is silica-based that said dell connects vibrating diaphragm;
N, with above-mentioned vibrating diaphragm silica-based corresponding to the surface that the vibrating diaphragm body thin film is set through eutectic bonding be installed on back pole plate silica-based on, the vibrating diaphragm body thin film is electrically connected with cmos circuit through the metal bonding layer.
Among the said step h, after the vibrating diaphragm body thin film is deposited on the insulation support layer, and pass through the residual stress that high annealing is removed the vibrating diaphragm body thin film; The material of vibrating diaphragm body thin film is conductive polycrystalline silicon or monocrystalline silicon.
The temperature of said vibrating diaphragm body thin film high annealing is 1000～1100 degree; The thickness of vibrating diaphragm body thin film is 0.7～1.2 μ m.
Said mask layer is a silicon nitride film, and the thickness of mask layer is 100nm.
The degree of depth of said shallow hole is 2～3 μ m, and the degree of depth of shallow slot and the degree of depth of shallow hole are consistent; Said shallow slot and shallow hole are that same processing step is processed.
Advantage of the present invention: back pole plate is silica-based, and to be provided with vibrating diaphragm silica-based, and it is the metal bonding layer bonding on silica-based through metal-silicon eutectic bonding method and back pole plate, the bottom electrode formation capacitance structure of conductive diaphragm and back pole plate; And vibrating diaphragm is electrically connected with cmos circuit through the metal bonding layer, has realized that the cmos circuit chip is vertically integrated; The silica-based dell that is provided with of vibrating diaphragm, silica-based the hole that is provided with of back pole plate, the sound that gets in dell or the sound hole can act on the vibrating diaphragm; Cmos circuit changes the corresponding voice signal of output through detecting vibrating diaphragm; Simplify production technology and encapsulating structure thereof, reduce production costs the reliability of enhance device.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the structural representation of back pole plate of the present invention.
Fig. 3 is the structural representation of vibrating diaphragm of the present invention.
Fig. 4～Fig. 7 is that the A-A of Fig. 2 implements cutaway view to concrete processing step, wherein:
Fig. 4 is a cutaway view behind the formation electric insulation layer on back pole plate is silica-based.
Fig. 5 is the cutaway view after forming input link slot and output link slot on the cmos circuit.
Fig. 6 is the cutaway view behind formation metal bonding layer and the bottom electrode.
Fig. 7 is the cutaway view behind the formation deep hole.
Fig. 8～Figure 15 is that the B-B of Fig. 3 implements cutaway view to concrete processing step, wherein:
Fig. 8 is the cutaway view behind the formation shallow hole.
Fig. 9 is the cutaway view behind the formation insulation support layer.
Figure 10 is the cutaway view behind the formation vibrating diaphragm body thin film.
Vibrating diaphragm is silica-based to be gone up corresponding to the cutaway view that is provided with behind another surperficial vibrating diaphragm body thin film of shallow hole Figure 11 in order to remove.
Figure 12 is the cutaway view behind the formation mask layer.
Vibrating diaphragm is silica-based to be gone up corresponding to the cutaway view that is provided with behind another surperficial mask layer of shallow hole Figure 13 in order to remove.
Figure 14 is the cutaway view after the formation etching window.
Figure 15 is the cutaway view behind the formation dell.
Figure 16 is with the structural representation behind the formation microphone behind vibrating diaphragm and the back pole plate bonding.
Embodiment
Below in conjunction with concrete accompanying drawing and embodiment the present invention is described further.
Like Fig. 1～shown in Figure 16: the present invention includes that back pole plate is silica-based 1, cmos circuit 2, first insulating medium layer 3, second insulating medium layer 4, link 5, bottom electrode 6, metal bonding layer 7, shallow slot 8, vibrating diaphragm are silica-based 9, shallow hole 10, insulation support layer 11, vibrating diaphragm body thin film 12, mask layer 13, dell 14, input link slot 15, output link slot 16, location hole 17, deep hole 18, input 19, output 20 and etching window 21.
Like Fig. 1 and shown in Figure 16: said MEMS silicon microphone comprises back pole plate and is positioned at the vibrating diaphragm body on the said back pole plate; Back pole plate comprises back pole plate silica-based 1 among the present invention; Said back pole plate silica-based 1 is provided with cmos circuit 2, and said cmos circuit 2 obtains through the common process manufacturing approach.Comprise the amplifier that amplifies the signal of Electret Condencer Microphone in the said cmos circuit 2, and the charge pump that microphone voltage is provided.In order to protect cmos circuit 2; Back pole plate silica-based 1 is provided with electric insulation layer; Said electric insulation layer comprises first insulating medium layer 3 and is positioned at second insulating medium layer 4 on said first insulating medium layer 3; Wherein, first insulating medium layer 3 is deposited on back pole plate silica-based 1 corresponding to the silicon nitride layer that cmos circuit 2 surfaces are set through PECVD (Plasma Enhanced Chemical Vapor Deposition) mode, and second insulating medium layer 4 is for to be deposited on the silicon dioxide layer on first insulating medium layer 3 through the PECVD mode; Corresponding matching through first insulating barrier 3 and second insulating medium layer 4 can improve electrical insulating property.In order can signal to be imported in the cmos circuit 2, and with the signal output that cmos circuit 2 is handled, be provided with link 5 directly over the said cmos circuit 2, said link 5 can be electrically connected with cmos circuit 2; Particularly, link 5 comprises input 19 and output 20, and said input 19 and output 20 are isolated through electric insulation layer.In order to form link 5; And the bottom electrode 6 of ability capacitance microphone; Through sputter or thermal evaporation deposited metal; The metal level that is positioned at cmos circuit 2 tops forms input 19 and output 20, and back pole plate silica-based 1 forms bottom electrode 6 corresponding to the metal level that cmos circuit 2 one side surfaces are set, and the metal level of bottom electrode 6 outer rings forms metal bonding layer 7.Be provided with some equally distributed sound hole 18 corresponding to the position that bottom electrode 6 is set on the back pole plate silica-based 1; Need to remove the corresponding electric insulation layer in location hole 17 belows through the dry etching method earlier in order to form hole 18, promptly need to remove earlier first insulating medium layer 3 and second insulating medium layer 4 of location hole 17 belows; Make location hole 17 extend downwardly into the surface of back pole plate silica-based 1.After removing electric insulation layer, bore a hole, during perforation, adopt picosecond laser bundle or dark pasc reaction ion etching method through 17 pairs of back pole plates of location hole silica-based 1, thus can be on back pole plate silica-based 1 formation sound hole 18, said sound hole 18 is corresponding with the position of location hole 17.The aperture in sound hole 18 is 50 to 100 microns, and is 300 to 500 microns as silica-based 1 thickness of the back pole plate of microphone back pole plate, and the wide ratio of the hole depth in formation sound hole 18 and hole is 3～10; Size, quantity and the position in sound hole 18 are set on demand, are as the criterion with extremely low acoustic noise can access required bandwidth.
Said vibrating diaphragm body comprises vibrating diaphragm silica-based 9; The outside dimension of vibrating diaphragm silica-based 9 is less than the outside dimension of back pole plate silica-based 1; Said vibrating diaphragm silica-based 9 is provided with conductive diaphragm, and said conductive diaphragm comprises vibrating diaphragm body thin film 12, and the material of said vibrating diaphragm body thin film 12 comprises conductive polycrystalline silicon or monocrystalline silicon.In order on vibrating diaphragm silica-based 9, to obtain vibrating diaphragm body thin film 12; On vibrating diaphragm silica-based 9, insulation support layer 11 is set earlier, deposit obtains vibrating diaphragm body thin film 12 on insulation support layer 11 then, through high-temperature annealing process; Remove the residual stress of vibrating diaphragm body thin film 12, improve the sensitivity of microphone; The technological temperature of high annealing is at 1000～1100 degree.Be provided with deep hole 14 in the vibrating diaphragm silica-based 9, said deep hole 14 is positioned at the center of vibrating diaphragm silica-based 9, and deep hole 14 to connect vibrating diaphragms silica-based 9, promptly deep hole 14 extends to vibrating diaphragm body thin film 12 from the surface of vibrating diaphragm silica-based 9.Vibrating diaphragm silica-based 9 is installed on the back pole plate silica-based 1 through metal-silicon eutectic bonding method corresponding to surface that forms vibrating diaphragm and the metal bonding layer 7 on the back pole plate silica-based 1.After vibrating diaphragm silica-based 9 was installed on the back pole plate silica-based 1, vibrating diaphragm silica-based 9 was positioned over the top that hole 18 is set, and was positioned at a side of cmos circuit 2; The position of deep hole 14 is corresponding with sound hole 18,6 matched in clearance of vibrating diaphragm body thin film 12 and bottom electrode, and vibrating diaphragm body thin film 12 is connected with sound hole 18 with the gap of 6 of bottom electrodes.Vibrating diaphragm body thin film 12 and bottom electrode 6 form two conductive electrodes of Electret Condencer Microphones; Vibrating diaphragm body thin film 12 is electrically connected with input 19 in the cmos circuit 2 through metal bonding layer 7; Thereby the charge pump in the cmos circuit 2 can provide the operating voltage of microphone, and can carry out voice signal through the amplifier of inside and amplify.Corresponding to being set, vibrating diaphragm body thin film 12 another sides are provided with insulation support layer 11 on the vibrating diaphragm silica-based 9; Said insulation support layer 11 is provided with mask layer 13; Said insulation support layer 11 and mask layer 13 are positioned at the outer ring of dell 14, can form the etching window 21 of etching dell 14 through insulation support layer 11 and mask layer 13.
Like Fig. 2～shown in Figure 16: the MEMS silicon microphone of said structure, realize through following processing step:
A, the back pole plate with cmos circuit 2 silica-based 1 is provided;
Said cmos circuit 2 can reach the vertically integrated of silicon microphone and cmos circuit 2 through the preparation of common process step through the back pole plate with cmos circuit 2 silica-based 1 is provided;
B, at above-mentioned back pole plate silica-based 1 corresponding to the surface deposition electric insulation layer that forms cmos circuit 2, said electric insulation layer is covered in the surface of back pole plate silica-based 1;
As shown in Figure 4: said electric insulation layer comprises first insulating medium layer 3 and second insulating medium layer 4, and said first insulating medium layer 3 is a silicon nitride layer, and second insulating medium layer 4 is a silicon dioxide layer; First insulating medium layer 3 and second insulating medium layer 4 can be protected cmos circuit 2, and first insulating medium layer 3 and second insulating medium layer 4 are covered in cmos circuit 2 simultaneously simultaneously;
C, optionally shelter with etching and be covered in the electric insulation layer on the cmos circuit 2; Cmos circuit 2 corresponding directly over form input link slot 15 and output link slot 16, said input link slot 15 is isolated with output link slot 16 through the electric insulation layer that is positioned at cmos circuit 2 centers;
As shown in Figure 5: through dry method or wet etching method; Remove first insulating medium layer 3 and second insulating medium layer 4 of cmos circuit 2 top counterparts; Thereby can access input link slot 15 and output link slot 16, input link slot 15 is isolated through the electric insulation layer of center with output link slot 16;
D, at above-mentioned back pole plate silica-based 1 corresponding to the surface deposition metal level that electric insulation layer is set; Said metal level is covered on the electric insulation layer; And be filled in input link slot 15 and the output link slot 16, and on back pole plate silica-based 1, form metal bonding layer 7 and bottom electrode 6;
As shown in Figure 6: said metal level forms through sputter or thermal evaporation, and metal level is filled in input link slot 15 and the output link slot 16, thereby forms input 19 and output 20; Metal level at silica-based 1 corresponding position of back pole plate forms bottom electrode 6, and the metal level of bottom electrode 6 outer rings forms metal bonding layer 7, and said metal bonding layer 7 is electrically connected with input 19; 6 of bottom electrodes have location hole 17;
E, bore a hole corresponding to the surface that bottom electrode 6 is set, on back pole plate silica-based 1, form some holes 18 at above-mentioned back pole plate silica-based 1, said sound hole 18 from the surface of bottom electrode 6 to extending below and connect back pole plate silica-based 1;
As shown in Figure 7: first insulating medium layer 3 and second insulating medium layer 4 that will remove location hole 17 belows during perforation earlier; During perforation; Adopt picosecond laser bundle or dark pasc reaction ion etching method to bore a hole, through forming the back pole plate structure of Electret Condencer Microphone after the above-mentioned technology;
F, provide vibrating diaphragm silica-based 9, and etch shallow hole 10 in the center of vibrating diaphragm silica-based 9, said shallow hole 10 is connected with the shallow slot 8 of silica-based 9 one ends of vibrating diaphragm;
As shown in Figure 8: said shallow hole 10 and shallow slot 8 carry out etching through the dry etching method; The degree of depth of shallow hole 10 and shallow slot 8 is consistent; The degree of depth of shallow hole 10 is 2 microns to 3 microns; Shallow slot 8 and shallow hole 10 are that same processing step preparation forms, and can guarantee not contacting of 6 connecting lines of vibrating diaphragm body thin film 12 and bottom electrode through shallow slot 8, avoid short circuit; The existence of shallow slot 8 can not influence the above acoustical behavior of microphone 50Hz;
G, the insulation support layer 11 of on above-mentioned vibrating diaphragm silica-based 9, growing, said insulation support layer 11 covers vibrating diaphragms silica-based 9 corresponding two surfaces;
As shown in Figure 9: the silicon dioxide layer of said insulation support layer 11 on vibrating diaphragm silica-based 9, forming through thermal oxidation method, the thickness of insulation support layer 11 is about 100nm;
H, on the insulation support layer 11 of above-mentioned vibrating diaphragm silica-based 9 deposit vibrating diaphragm body thin film 12, said vibrating diaphragm body thin film 12 covers the insulation support layers 11 on vibrating diaphragms silica-based 9 corresponding surfaces;
Shown in figure 10: said vibrating diaphragm body thin film 12 is formed on the insulation support layer 11 on vibrating diaphragm silica-based 9 corresponding surfaces through LPCVD (low-pressure chemical vapor deposition) coprecipitation mode, and the material of vibrating diaphragm body thin film 12 comprises conductive polycrystalline silicon or monocrystalline silicon; After obtaining vibrating diaphragm body thin film 12, remove the residual stress on the vibrating diaphragm body thin film 12 through the high annealing mode, the residual stress that obtains vibrating diaphragm body thin film 12 is 0; The temperature of high annealing is 1000～1100 degree, and the thickness of vibrating diaphragm body thin film 12 is 0.7 micron～1.2 microns;
I, remove on the vibrating diaphragm silica-based 9 corresponding to the vibrating diaphragm body thin film 12 that shallow hole 10 opposite sides surface is set;
Shown in figure 11: remove vibrating diaphragm silica-based 9 corresponding to the vibrating diaphragm body thin film 12 that shallow hole 10 another sides are set through the dry etching method, vibrating diaphragm silica-based 9 corresponding to the vibrating diaphragm body thin film 12 that shallow hole 10 1 side surfaces are set as vibrating diaphragm;
J, on two surfaces of above-mentioned vibrating diaphragm silica-based 9 deposit mask layer 13, said mask layer 13 is covered in vibrating diaphragm silica-based 9 corresponding surfaces;
Shown in figure 12: the silicon nitride layer of said mask layer 13 for forming through LPCVD, the thickness of mask layer 13 is 100nm, through the mask of mask layer 13 as potassium hydroxide or tetramethyl aqua ammonia bulk silicon etching;
K, removal above-mentioned vibrating diaphragm silica-based 9 keep the mask layer 13 of silica-based 9 another sides of vibrating diaphragm corresponding to the mask layer 13 that shallow hole 10 1 side surfaces are set;
Shown in figure 13: as, need behind the removal mask layer 13, to make vibrating diaphragm body thin film 12 surfaces expose with vibrating diaphragm silica-based 9 corresponding to the mask layer 13 that shallow hole 10 surfaces are set in order to access vibrating diaphragm;
L, etching vibrating diaphragm silica-based 9 lip-deep mask layer 13 and insulation support layers 11 keep the mask layer 13 and the insulation support layer 11 that are positioned at silica-based 9 end edge of vibrating diaphragm; On vibrating diaphragm silica-based 9, form etching window 21, said etching window 21 extends to the surface of vibrating diaphragm silica-based 9 from mask layer 13 surfaces;
Shown in figure 14: through photoetching and dry etching method etching vibrating diaphragm silica-based 9 corresponding to part mask layer 13 that shallow hole 10 another sides are set and insulation support layer 11; Thereby on vibrating diaphragm silica-based 9, form etching window 21, the axis of the axis of said etching window 21 and vibrating diaphragm silica-based 9 is located along the same line; Etching window 21 and shallow hole 10 are positioned at the corresponding surface of vibrating diaphragm silica-based 9;
M, utilize 21 pairs of vibrating diaphragms of above-mentioned etching window silica-based 9 to carry out etching, obtain being positioned at the dell 14 of vibrating diaphragm silica-based 9, said dell 14 connects vibrating diaphragms silica-based 9;
Shown in figure 15: as to carry out the body silicon etching through potassium hydroxide solution or tetramethyl aqua ammonia, obtain dell 14, etch into insulation support layer 11 during etching dell 14 always;
N, above-mentioned vibrating diaphragm silica-based 9 is installed on the back pole plate silica-based 1 through eutectic bonding corresponding to the surface that vibrating diaphragm body thin film 12 is set, vibrating diaphragm body thin film 12 is electrically connected with cmos circuit 2 through metal bonding layer 7.
Vibrating diaphragm silica-based 9 is installed on back pole plate silica-based 1 last time through the eutectic bonding method, and the shallow slot 8 contiguous cmos circuits 2 on the vibrating diaphragm silica-based 9 can be avoided the short circuit that connects through shallow slot 8.
Like Fig. 1～shown in Figure 16: during work, the output of cmos circuit 2 is linked to each other with external detection equipment, 6 of vibrating diaphragm body thin film 12 and bottom electrodes form capacitance structure.When having sound, the outside gets into from dell 14 or sound hole 18; The sound that gets into dell 14 or sound hole 18 can produce active force to vibrating diaphragm body thin film 12, and the surface of vibrating diaphragm body thin film 12 receives active force can produce corresponding deformation.When deformation took place for vibrating diaphragm body thin film 12,6 of vibrating diaphragm body thin film 12 and bottom electrodes formed capacitance structure and also can take place change, exported variation through output 20 behind charge pump through cmos circuit 2 and the amplifier, detected the voice signal of correspondence.
Back pole plate of the present invention is realized on back pole plate silica-based 1; The diameter in sound hole 18 is designed to 50 microns to 100 microns; Can directly bore a hole to 300 microns back pole plates silica-based 1 with laser beam or dark pasc reaction ion etching method fully, need not carry out attenuate back pole plate silica-based 1 to 500 micron thick.And sound hole 18 sizes are several microns on the back pole plate that designs usually, can't realize with laser beam technology; If with dark pasc reaction ion etching method, because of the restriction of the etching depth-to-width ratio of its technology, realize that several microns sound holes bore a hole, need carry out attenuate to back pole plate silica-based 1.And back pole plate design of the present invention and preparation method when guaranteeing microphone property, have simplified preparation technology, have realized the compatibility of cmos circuit 2 with silicon microphone back pole plate technology, and can be integrated on same the back pole plate silica-based 1.Single one step of technology of bonding metal layer 7 usefulness required when the bottom electrode 6 of microphone and eutectic bonding accomplishes, and has further simplified technological process.Metal-silicon eutectic bonding method can realize that circuit connects the link 5 of conductive polycrystalline silicon vibrating diaphragm to the cmos amplifier circuit when realizing microphone diaphragm silicon chip and back pole plate bonding.Shallow slot 8 degree of depth on vibrating diaphragm silica-based 9 are between 2 microns to 3 microns, its role is to guarantee that vibrating diaphragm body thin film 12 and below are positioned at bottom electrode 6 and between the metal lead wire of cmos amplifier circuit 2 inputs, do not contact, and avoid short circuit.The design of shallow slot 8 can cause frequency acoustic to leak, but can not influence the desired acoustical behavior more than 50 hertz of silicon microphone.The vibrating diaphragm body thin film 12 that forms vibrating diaphragm, is reduced residual stress and approaches zero subsequently through the mode of high annealing by LPCVD method deposition.Carry out the corrosion of body silicon with potassium hydroxide or tetramethyl Dilute Ammonia Solution, form the dell 14 of microphone.Metal-silicon eutectic bonding method is finally accomplished the bonding of microphone diaphragm silica-based 9 and back pole plate silica-based 1, realizes the vertical integrated MEMS silicon microphone chip preparation of cmos circuit.
Claims (10)
- One kind with the vertical integrated MEMS silicon microphone of cmos circuit, comprise back pole plate silica-based (1) and be positioned at said back pole plate silica-based (1) top vibrating diaphragm silica-based (9); It is characterized in that: said back pole plate silica-based (1) is gone up the opposite side that links to each other corresponding to silica-based with vibrating diaphragm (9) and is provided with cmos circuit (2); Back pole plate silica-based (1) correspondence is provided with on the surface of cmos circuit (2) and is deposited with electric insulation layer; Said electric insulation layer is provided with metal bonding layer (7), and said metal bonding layer (7) is electrically connected with the link of cmos circuit (2); Back pole plate silica-based (1) is provided with some holes (18); Said sound hole (18) be positioned at vibrating diaphragm silica-based (9) under; And sound hole (18) connects back pole plate silica-based (1) from the surface of metal bonding layer (7) to extending below, and back pole plate silica-based (1) forms bottom electrode (6) corresponding to the metal bonding layer (7) that surface, hole (18) is set; Vibrating diaphragm silica-based (9) is provided with conductive diaphragm corresponding to the surface that silica-based with back pole plate (1) links to each other; Be provided with the dell (14) that connects vibrating diaphragm silica-based (9) in the vibrating diaphragm silica-based (9); Said dell (14) be positioned at hole (18) directly over, and dell (14) and sound the corresponding distribution in hole (18); Vibrating diaphragm silica-based (9) is installed on the metal bonding layer (7) corresponding to the surface bond that vibrating diaphragm is set, and conductive diaphragm is electrically connected conductive diaphragm and bottom electrode (6) matched in clearance through metal bonding layer (7) with cmos circuit (2).
- According to claim 1 said with the vertical integrated MEMS silicon microphone of cmos circuit, it is characterized in that: the aperture in said sound hole (18) is 50 ~ 100 μ m; The thickness of said back pole plate silica-based (1) is 300 ~ 500 μ m.
- According to claim 1 said with the vertical integrated MEMS silicon microphone of cmos circuit, it is characterized in that: said electric insulation layer comprises first insulating medium layer (3) that is positioned at back pole plate silica-based (1) surface and is positioned at second insulating medium layer (4) on said first insulating medium layer (3); Said first insulating barrier (3) is a silicon nitride layer, and second insulating medium layer (4) is a silicon dioxide layer.
- According to claim 1 said with the vertical integrated MEMS silicon microphone of cmos circuit, it is characterized in that: the link of said cmos circuit (2) comprises input (19) and output (20), the contiguous vibrating diaphragm silica-based (9) of said input (19); Input (19) and output (20) are isolated through electric insulation layer.
- According to claim 1 said with the vertical integrated MEMS silicon microphone of cmos circuit; It is characterized in that: said conductive diaphragm comprises and grows in the insulation support membrane (11) on the vibrating diaphragm silica-based (9) and be deposited on the vibrating diaphragm body thin film (12) on the said insulation support membrane (11), and said vibrating diaphragm body thin film (12) is removed residual stress through high annealing.
- One kind with the vertical integrated MEMS silicon microphone preparation method of cmos circuit, it is characterized in that said MEMS silicon microphone preparation method comprises the steps:(a), the have cmos circuit back pole plate silica-based (1) of (2) is provided;(b), at above-mentioned back pole plate silica-based (1) corresponding to the surface deposition electric insulation layer that forms cmos circuit (2), said electric insulation layer is covered in the surface of back pole plate silica-based (1);(c), optionally shelter with etching and be covered in the electric insulation layer on the cmos circuit (2); Cmos circuit (2) corresponding directly over form input link slot (15) and output link slot (16), said input link slot (15) is isolated with output link slot (16) through the electric insulation layer that is positioned at cmos circuit (2) center;(d), at above-mentioned back pole plate silica-based (1) corresponding to the surface deposition metal level that electric insulation layer is set; Said metal level is covered on the electric insulation layer; And be filled in input link slot (15) and the output link slot (16), and go up formation metal bonding layer (7) and bottom electrode (6) at back pole plate silica-based (1);(e), bore a hole corresponding to the surface that bottom electrode (6) is set at above-mentioned back pole plate silica-based (1); Go up to form some holes (18) at back pole plate silica-based (1), said sound hole (18) from the surface of bottom electrode (6) to extending below and connect back pole plate silica-based (1);(f), provide vibrating diaphragm silica-based (9), and etch shallow hole (10) in the center of vibrating diaphragm silica-based (9), said shallow hole (10) is connected with the shallow slot (8) of silica-based (9) one ends of vibrating diaphragm;(g), go up growth insulation support layer (11) at above-mentioned vibrating diaphragm silica-based (9), corresponding two surfaces of said insulation support layer (11) covering vibrating diaphragm silica-based (9);(h), go up deposit vibrating diaphragm body thin film (12) at the insulation support layer (11) of above-mentioned vibrating diaphragm silica-based (9), the insulation support layer (11) on silica-based (9) two surfaces of said vibrating diaphragm body thin film (12) covering vibrating diaphragm;(i), removing vibrating diaphragm silica-based (9) goes up corresponding to the vibrating diaphragm body thin film (12) that shallow hole (10) opposite side surface is set;(j), on two surfaces of above-mentioned vibrating diaphragm silica-based (9) deposit mask layer (13), said mask layer (13) is covered in the corresponding surface of vibrating diaphragm silica-based (9);(k), remove above-mentioned vibrating diaphragm silica-based (9) corresponding to the mask layer that shallow hole (10) one side surfaces are set (13), the mask layer (13) of reservation vibrating diaphragm silica-based (9) another side;(l), etching vibrating diaphragm silica-based (9) lip-deep mask layers (13) and insulation support layer (11), keep the mask layer (13) and the insulation support layer (11) that are positioned at vibrating diaphragm silica-based (9) end edge; Go up formation etching window (21) at vibrating diaphragm silica-based (9), said etching window (21) extends to the surface of vibrating diaphragm silica-based (9) from mask layer (13) surface;(m), utilize above-mentioned etching window (21) that vibrating diaphragm silica-based (9) is carried out etching, obtain being positioned at the dell (14) of vibrating diaphragm silica-based (9), said dell (14) connects vibrating diaphragm silica-based (9);(n), above-mentioned vibrating diaphragm silica-based (9) is installed on the back pole plate silica-based (1) through eutectic bonding corresponding to the surface that vibrating diaphragm body thin film (12) is set, vibrating diaphragm body thin film (12) is electrically connected with cmos circuit (2) through metal bonding layer (7).
- 7. the vertical integrated MEMS silicon microphone preparation method of according to claim 6 and cmos circuit; It is characterized in that: in the said step (h); After vibrating diaphragm body thin film (12) is deposited on the insulation support layer (11), and pass through the residual stress that high annealing is removed vibrating diaphragm body thin film (12); The material of vibrating diaphragm body thin film (12) is conductive polycrystalline silicon or monocrystalline silicon.
- 8. the vertical integrated MEMS silicon microphone preparation method of according to claim 7 and cmos circuit is characterized in that: the temperature of said vibrating diaphragm body thin film (12) high annealing is 1000 ~ 1100 degree; The thickness of vibrating diaphragm body thin film (12) is 0.7 ~ 1.2 μ m.
- 9. the vertical integrated MEMS silicon microphone preparation method of according to claim 6 and cmos circuit, it is characterized in that: said mask layer (13) is a silicon nitride film, and the thickness of mask layer (13) is 100nm.
- 10. the vertical integrated MEMS silicon microphone preparation method of according to claim 6 and cmos circuit, it is characterized in that: the degree of depth of said shallow hole (10) is 2 ~ 3 μ m, the degree of depth of the degree of depth of shallow slot (8) and shallow hole (10) is consistent; Said shallow slot (8) is processed for same processing step with shallow hole (10).
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