CN102333254B - MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same - Google Patents
MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same Download PDFInfo
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- CN102333254B CN102333254B CN 201110269419 CN201110269419A CN102333254B CN 102333254 B CN102333254 B CN 102333254B CN 201110269419 CN201110269419 CN 201110269419 CN 201110269419 A CN201110269419 A CN 201110269419A CN 102333254 B CN102333254 B CN 102333254B
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Abstract
The invention discloses a MEMS (Micro Electro Mechanical System) silicon microphone longitudinally integrated with CMOS (Complementary Metal Oxide Semiconductor) circuit, and a manufacturing method for the same. The MEMS silicon microphone comprises a back polar plate silicon substrate and a diaphragm silicon substrate; the back polar plate silicon substrate is provided with the CMOS circuit, an electrical insulating layer is deposited on the surface of the back polar plate silicon substrate where the CMOS circuit is arranged correspondingly, the electrical insulating layer is provided with a metal bonding layer, and the metal bonding layer is electrically connected with a connecting end of the CMOS circuit; the back polar plate silicon substrate is provided with a plurality of sound holes; the diaphragm silicon substrate is provided with a diaphragm on a surface where the back polar plate silicon substrate is connected, the diaphragm silicon substrate is internally provided with a pit penetrating through the diaphragm silicon substrate, the pit is located directly over the sound holes, and the pit and the sound holes are distributed correspondingly; the diaphragm silicon substrate is mounted on the metal bonding layer in a manner of bonding corresponding to the surface on which the diaphragm is located, the diaphragm is electrically connected with the CMOS circuit through the metal bonding layer, and the diaphragm is in clearance fit with a lower electrode. The MEMS silicon microphone can be integrated with a CMOS circuit chip vertically, so that production technology and packaging structure of the MEMS silicon microphone both can be simplified, production cost can be reduced, and reliability of components can be enhanced.
Description
Technical field
The present invention relates to a kind of silicon microphone and preparation method thereof, MEMS silicon microphone of especially a kind of and cmos circuit Top-down design and preparation method thereof belongs to the technical field of silicon microphone.
Background technology
Mike's wind energy is converted into the corresponding signal of telecommunication to people's voice signal, is widely used in mobile phone, computer, telephone set, camera and video camera etc.Traditional electret capacitor microphone adopts Teflon as vibration film, can not bear the high temperature at nearly 300 degree of printed circuit board (PCB) solder reflow process, thereby can only separate with the assembling of integrated circuit, and hand assembled, increased production cost greatly separately.
The development of the MEMS of nearly 30 years (Microelectromechanical Systems) technology, particularly based on the development of silicon MEMS technology, realized the microminiaturized and low-cost of many transducers (as pressure sensor, accelerometer, gyroscope etc.).The MEMS silicon microphone has begun industrialization, in the application of high-end mobile phone, replaces gradually traditional electret capacitor microphone.But, due to complicated process of preparation, the production cost of MEMS silicon microphone is compared also quite high with electret microphone, particularly the production technology of MEMS silicon microphone chip and CMOS integrated circuit are incompatible, making the amplifier chip that matches with microphone chip to separate prepares, and microphone chip is connected need employing bonding wire bonding with the signal of telecommunication of amplifier chip, has further increased production cost, has reduced simultaneously reliability.
The MEMS microphone mainly still adopts capacitive principle, is comprised of a vibration film and back pole plate, and the spacing of several microns is arranged between vibration film and back pole plate, forms capacitance structure.After high-sensitive vibration film is experienced outside audio frequency sound pressure signal, change the distance between vibration film and back pole plate, thereby form capacitance variations.Connect cmos amplifier after the MEMS microphone and capacitance variations is changed into the variation of voltage signal, then become electricity output after amplifying.
People's voice sound pressure signal is very faint, and vibration film must be very sensitive.The material of General Oscillation film is polysilicon or silicon nitride, and thickness is 0. 5 to two microns left and right, depending on the size of vibration film and different.Due to thermal coefficient of expansion difference and the high-temperature technology of material, the vibration film after preparation has residual stress in various degree, has greatly affected the sensitivity of vibration film.So, when using polysilicon as vibration film, generally can adopt additional anneal technique afterwards in preparation, regulate residual stress and drop to minimum; If as vibration film, reduce residual stress by the ratio between conditioned reaction gas with silicon nitride in the preparation.Simultaneously, also can adopt the mechanical structure that changes vibration film, general plate vibration film is changed into the line film, epistasis, or cut small groove on vibration film, thus reach the purpose that reduces residual stress, increases sensitivity.But the method that changes the vibration film structure can cause complicated process of preparation, increases cost, reduces yield.
Back pole plate also has except forming electric capacity with vibration film the frequency band of controlling microphone, reduces the functions such as acoustic noise.It need to have certain rigidity, can be because of vibration or the acoustic pressure deformation of outside.In addition, it is the perforation of several microns to thousands of diameters that general design also needs to prepare on back pole plate hundreds of, is used for regulating the frequency band of microphone and reduces acoustic noise.Due to the restriction of pitting corrosion preparation technology's depth-to-width ratio, the thickness of back pole plate generally can be over tens microns.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, MEMS silicon microphone of a kind of and cmos circuit Top-down design and preparation method thereof is provided, and it can be integrated with the cmos circuit Chip Vertical, simplifies production technology and encapsulating structure thereof, reduce production costs, the reliability of enhance device.
According to technical scheme provided by the invention, the MEMS silicon microphone of described and cmos circuit Top-down design comprises that back pole plate is silica-based and is positioned at described back pole plate silica-based top vibrating diaphragm silica-based; Described back pole plate is silica-based upper corresponding to being provided with cmos circuit with the silica-based opposite side that is connected of vibrating diaphragm, the silica-based correspondence of back pole plate arranges on the surface of cmos circuit and is deposited with electric insulation layer, described electric insulation layer is provided with the metal bonding layer, and described metal bonding layer is electrically connected to the link of cmos circuit; Back pole plate is silica-based is provided with some sound holes, described sound hole be positioned at vibrating diaphragm silica-based under, and to connect back pole plate from the surface of metal bonding layer to downward-extension silica-based the sound hole, the silica-based metal bonding layer corresponding to the sound hole surface is set of back pole plate forms bottom electrode; Vibrating diaphragm is silica-based corresponding to being provided with conductive diaphragm with the back pole plate silica-based surface that is connected, be provided with in vibrating diaphragm is silica-based and connect the silica-based dell of vibrating diaphragm, described dell be positioned at the sound hole directly over, and dell and the corresponding distribution in sound hole; The silica-based surface bond corresponding to vibrating diaphragm is set of vibrating diaphragm is installed on the metal bonding layer, and conductive diaphragm is electrically connected to cmos circuit by the metal bonding layer, conductive diaphragm and bottom electrode matched in clearance.
The aperture in described sound hole is 50～100 μ m; The silica-based thickness of described back pole plate is 300～500 μ m.Described electric insulation layer comprises the first insulating medium layer that is positioned at the back pole plate silicon substrate surface and is positioned at the second insulating medium layer on described the first insulating medium layer; Described the first insulating barrier is silicon nitride layer, and the second insulating medium layer is silicon dioxide layer.
The link of described cmos circuit comprises input and output, and the contiguous vibrating diaphragm of described input is silica-based; Input and output are isolated by electric insulation layer.
Described conductive diaphragm comprise grow in vibrating diaphragm on silica-based the insulating supporting film and be deposited on vibrating diaphragm body thin film on described insulating supporting film, and described vibrating diaphragm body thin film is removed residual stress by high annealing.
A kind of MEMS silicon microphone preparation method of and cmos circuit Top-down design, described MEMS silicon microphone preparation method comprises the steps:
A, provide the back pole plate with cmos circuit silica-based;
B, at the silica-based surface deposition electric insulation layer corresponding to forming cmos circuit of above-mentioned back pole plate, described electric insulation layer is covered in back pole plate silica-based surface;
C, optionally shelter with etching and be covered in electric insulation layer on cmos circuit, cmos circuit corresponding directly over form input link slot and output link slot, described input link slot is by being positioned at the electric insulation layer and the isolation of output link slot of cmos circuit center;
D, at the silica-based surface deposition metal level corresponding to electric insulation layer is set of above-mentioned back pole plate, described metal level is covered on electric insulation layer, and is filled in input link slot and output link slot, and forms metal bonding layer and bottom electrode on back pole plate is silica-based;
E, bore a hole corresponding to the surface that bottom electrode is set above-mentioned back pole plate is silica-based, form some sound holes on back pole plate is silica-based, described sound hole is from the surface of bottom electrode to downward-extension and to connect back pole plate silica-based;
F, provide vibrating diaphragm silica-based, and etch shallow hole in vibrating diaphragm silica-based center, described shallow hole is connected with the shallow slot of the silica-based end of vibrating diaphragm;
G, the insulation support layer of growing on above-mentioned vibrating diaphragm is silica-based, described insulation support layer cover vibrating diaphragm silica-based two corresponding surfaces;
H, on the silica-based insulation support layer of above-mentioned vibrating diaphragm deposit vibrating diaphragm body thin film, described vibrating diaphragm body thin film covers the insulation support layer on silica-based two surfaces of vibrating diaphragm;
I, to remove vibrating diaphragm silica-based upper corresponding to the vibrating diaphragm body thin film that shallow hole opposite side surface is set;
J, on two silica-based surfaces of above-mentioned vibrating diaphragm the deposit mask layer, described mask layer is covered in vibrating diaphragm silica-based corresponding surface;
K, remove the silica-based mask layer corresponding to shallow hole one side surface is set of above-mentioned vibrating diaphragm, keep the mask layer of the silica-based another side of vibrating diaphragm;
Mask layer and insulation support layer on l, etching vibrating diaphragm silicon substrate surface keep the mask layer and the insulation support layer that are positioned at the silica-based end edge of vibrating diaphragm, form etching window on vibrating diaphragm is silica-based; Described etching window extends to vibrating diaphragm silica-based surface from the mask layer surface;
M, utilize above-mentioned etching window to the silica-based etching of carrying out of vibrating diaphragm, obtain being positioned at the silica-based dell of vibrating diaphragm, it is silica-based that described dell connects vibrating diaphragm;
N, with above-mentioned vibrating diaphragm silica-based surface corresponding to the vibrating diaphragm body thin film is set by eutectic bonding be installed on back pole plate silica-based on, the vibrating diaphragm body thin film is electrically connected to cmos circuit by the metal bonding layer.
In described step h, after the vibrating diaphragm body thin film is deposited on insulation support layer, and remove the residual stress of vibrating diaphragm body thin film by high annealing; The material of vibrating diaphragm body thin film is conductive polycrystalline silicon or monocrystalline silicon.
The temperature of described vibrating diaphragm body thin film high annealing is 1000～1100 degree; The thickness of vibrating diaphragm body thin film is 0.7～1.2 μ m.
Described mask layer is silicon nitride film, and the thickness of mask layer is 100nm.
The degree of depth of described shallow hole is 2～3 μ m, and the degree of depth of shallow slot is consistent with the degree of depth of shallow hole; Described shallow slot and shallow hole are that same processing step is made.
Advantage of the present invention: back pole plate is silica-based, and to be provided with vibrating diaphragm silica-based, the metal bonding layer bonding on it is silica-based by metal-silicon eutectic bonding method and back pole plate, the bottom electrode formation capacitance structure of conductive diaphragm and back pole plate; And vibrating diaphragm is electrically connected to cmos circuit by the metal bonding layer, has realized that the cmos circuit Chip Vertical is integrated; The silica-based dell that is provided with of vibrating diaphragm, back pole plate is silica-based is provided with the sound hole, and the sound that enters in dell or sound hole can act on vibrating diaphragm, cmos circuit changes the corresponding voice signal of output by detecting vibrating diaphragm, simplify production technology and encapsulating structure thereof, reduce production costs, the reliability of enhance device.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is the structural representation of back pole plate of the present invention.
Fig. 3 is the structural representation of vibrating diaphragm of the present invention.
Fig. 4～Fig. 7 is that the A-A of Fig. 2 implements cutaway view to the concrete technology step, wherein:
Fig. 4 is cutaway view after the formation electric insulation layer on back pole plate is silica-based.
Fig. 5 is the cutaway view after forming input link slot and output link slot on cmos circuit.
Fig. 6 is the cutaway view after formation metal bonding layer and bottom electrode.
Fig. 7 is the cutaway view after the formation deep hole.
Fig. 8～Figure 15 is that the B-B of Fig. 3 implements cutaway view to the concrete technology step, wherein:
Fig. 8 is the cutaway view after the formation shallow hole.
Fig. 9 is the cutaway view after the formation insulation support layer.
Figure 10 is the cutaway view after formation vibrating diaphragm body thin film.
Figure 11 is for removing the silica-based upper cutaway view corresponding to arranging after another surperficial vibrating diaphragm body thin film of shallow hole of vibrating diaphragm.
Figure 12 is the cutaway view after the formation mask layer.
Figure 13 is for removing the silica-based upper cutaway view corresponding to arranging after another surperficial mask layer of shallow hole of vibrating diaphragm.
Figure 14 is the cutaway view after the formation etching window.
Figure 15 is the cutaway view after the formation dell.
Figure 16 is with the structural representation after formation microphone after vibrating diaphragm and back pole plate bonding.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
As Fig. 1～shown in Figure 16: the present invention includes that back pole plate is silica-based 1, cmos circuit 2, the first insulating medium layer 3, the second insulating medium layer 4, link 5, bottom electrode 6, metal bonding layer 7, shallow slot 8, vibrating diaphragm are silica-based 9, shallow hole 10, insulation support layer 11, vibrating diaphragm body thin film 12, mask layer 13, dell 14, input link slot 15, output link slot 16, location hole 17, deep hole 18, input 19, output 20 and etching window 21.
As Fig. 1 and shown in Figure 16: as described in the MEMS silicon microphone comprise back pole plate and be positioned at as described in vibrating diaphragm body on back pole plate, in the present invention, back pole plate comprises back pole plate silica-based 1, described back pole plate silica-based 1 is provided with cmos circuit 2, and described cmos circuit 2 obtains by the common process manufacture method.Comprise the amplifier that the signal of Electret Condencer Microphone is amplified in described cmos circuit 2, and the charge pump that microphone voltage is provided.in order to protect cmos circuit 2, back pole plate silica-based 1 is provided with electric insulation layer, described electric insulation layer comprises the first insulating medium layer 3 and is positioned at the second insulating medium layer 4 on described the first insulating medium layer 3, wherein, the first insulating medium layer 3 is deposited on back pole plate silica-based 1 corresponding to the silicon nitride layer that cmos circuit 2 surfaces are set by PECVD (Plasma Enhanced Chemical Vapor Deposition) mode, the second insulating medium layer 4 is for being deposited on the silicon dioxide layer on the first insulating medium layer 3 by the PECVD mode, corresponding matching by the first insulating barrier 3 and the second insulating medium layer 4, can improve electrical insulating property.For signal can being inputted in cmos circuit 2, and with the signal output that cmos circuit 2 is processed, be provided with link 5 directly over described cmos circuit 2, described link 5 can be electrically connected to cmos circuit 2; Particularly, link 5 comprises input 19 and output 20, and described input 19 and output 20 are isolated by electric insulation layer.In order to form link 5, and the bottom electrode 6 of energy capacitance microphone, by sputter or thermal evaporation deposited metal, be positioned at metal level formation input 19 and the output 20 of cmos circuit 2 tops, back pole plate silica-based 1 forms bottom electrode 6 corresponding to the metal level that cmos circuit 2 one side surfaces are set, and the metal level of bottom electrode 6 outer rings forms metal bonding layer 7.Be provided with some equally distributed sound hole 18 corresponding to the position that bottom electrode 6 is set on back pole plate silica-based 1, the electric insulation layer that needs first to remove by the dry etching method location hole 17 below correspondences in order to form sound hole 18 namely need first to remove the first insulating medium layer 3 and second insulating medium layer 4 of location hole 17 belows; Make location hole 17 extend downwardly into the surface of back pole plate silica-based 1.After removing electric insulation layer, bore a hole by 17 pairs of back pole plates of location hole silica-based 1, during perforation, adopt picosecond laser bundle or dark pasc reaction ion etching method, thus can be on back pole plate silica-based 1 formation sound hole 18, described sound hole 18 is corresponding with the position of location hole 17.The aperture in sound hole 18 is 50 to 100 microns, and is 300 to 500 microns as silica-based 1 thickness of the back pole plate of microphone back pole plate, and the wide ratio of hole depth and hole in formation sound hole 18 is 3～10; The size in sound hole 18, quantity and position are set on demand, are as the criterion with extremely low acoustic noise can access required bandwidth.
Described vibrating diaphragm body comprises vibrating diaphragm silica-based 9, the outside dimension of vibrating diaphragm silica-based 9 is less than the outside dimension of back pole plate silica-based 1, described vibrating diaphragm silica-based 9 is provided with conductive diaphragm, and described conductive diaphragm comprises vibrating diaphragm body thin film 12, and the material of described vibrating diaphragm body thin film 12 comprises conductive polycrystalline silicon or monocrystalline silicon.In order to obtain vibrating diaphragm body thin film 12 on vibrating diaphragm silica-based 9, on vibrating diaphragm silica-based 9, insulation support layer 11 is set first, then deposit obtains vibrating diaphragm body thin film 12 on insulation support layer 11, passes through high-temperature annealing process, remove the residual stress of vibrating diaphragm body thin film 12, improve the sensitivity of microphone; The technological temperature of high annealing is at 1000～1100 degree.Be provided with deep hole 14 in vibrating diaphragm silica-based 9, described deep hole 14 is positioned at the center of vibrating diaphragm silica-based 9, and deep hole 14 to connect vibrating diaphragms silica-based 9, namely deep hole 14 extends to vibrating diaphragm body thin film 12 from the surface of vibrating diaphragm silica-based 9.Vibrating diaphragm silica-based 9 is installed on back pole plate silica-based 1 by metal-silicon eutectic bonding method corresponding to the surface that forms vibrating diaphragm and the metal bonding layer 7 on back pole plate silica-based 1.After vibrating diaphragm silica-based 9 was installed on back pole plate silica-based 1, vibrating diaphragm silica-based 9 was positioned over the top that sound hole 18 is set, and was positioned at a side of cmos circuit 2; The position of deep hole 14 is corresponding with sound hole 18,6 matched in clearance of vibrating diaphragm body thin film 12 and bottom electrode, and the gap of vibrating diaphragm body thin film 12 and 6 of bottom electrodes is connected with sound hole 18.Vibrating diaphragm body thin film 12 and bottom electrode 6 form two conductive electrodes of Electret Condencer Microphones, vibrating diaphragm body thin film 12 is electrically connected to input 19 in cmos circuit 2 by metal bonding layer 7, thereby the charge pump in cmos circuit 2 can provide the operating voltage of microphone, and can carry out by the amplifier of inside voice signal and amplify.Corresponding to being set, vibrating diaphragm body thin film 12 another sides are provided with insulation support layer 11 on vibrating diaphragm silica-based 9, described insulation support layer 11 is provided with mask layer 13, described insulation support layer 11 and mask layer 13 are positioned at the outer ring of dell 14, can form the etching window 21 of etching dell 14 by insulation support layer 11 and mask layer 13.
As Fig. 2～shown in Figure 16: the MEMS silicon microphone of said structure, realize by following processing step:
A, provide the back pole plate with cmos circuit 2 silica-based 1;
Described cmos circuit 2 can reach the Top-down design of silicon microphone and cmos circuit 2 by the preparation of common process step by the back pole plate with cmos circuit 2 silica-based 1 is provided;
B, at above-mentioned back pole plate silica-based 1 corresponding to the surface deposition electric insulation layer that forms cmos circuit 2, described electric insulation layer is covered in the surface of back pole plate silica-based 1;
As shown in Figure 4: described electric insulation layer comprises the first insulating medium layer 3 and the second insulating medium layer 4, and described the first insulating medium layer 3 is silicon nitride layer, and the second insulating medium layer 4 is silicon dioxide layer; The first insulating medium layer 3 and the second insulating medium layer 4 can be protected cmos circuit 2, and the first insulating medium layer 3 and the second insulating medium layer 4 are covered in cmos circuit 2 simultaneously simultaneously;
C, optionally shelter with etching and be covered in electric insulation layer on cmos circuit 2, form input link slot 15 and output link slot 16 directly over cmos circuit 2 correspondences, described input link slot 15 is by being positioned at the electric insulation layer and 16 isolation of output link slot of cmos circuit 2 centers;
As shown in Figure 5: by dry method or wet etching method, remove the first insulating medium layer 3 and second insulating medium layer 4 of cmos circuit 2 top corresponding parts, thereby can access input link slot 15 and output link slot 16, input link slot 15 is isolated by the electric insulation layer of center with output link slot 16;
D, at above-mentioned back pole plate silica-based 1 corresponding to the surface deposition metal level that electric insulation layer is set, described metal level is covered on electric insulation layer, and be filled in input link slot 15 and output link slot 16, and form metal bonding layer 7 and bottom electrode 6 on back pole plate silica-based 1;
As shown in Figure 6: described metal level forms by sputter or thermal evaporation, and metal level is filled in input link slot 15 and output link slot 16, thereby forms input 19 and output 20; Form bottom electrode 6 at the metal level of silica-based 1 corresponding position of back pole plate, the metal level of bottom electrode 6 outer rings forms metal bonding layer 7, and described metal bonding layer 7 is electrically connected to input 19; 6 of bottom electrodes have location hole 17;
E, bore a hole corresponding to the surface that bottom electrode 6 is set at above-mentioned back pole plate silica-based 1, form some sound hole 18 on back pole plate silica-based 1, described sound hole 18 is from the surface of bottom electrode 6 to downward-extension and connect back pole plate silica-based 1;
As shown in Figure 7: the first insulating medium layer 3 and the second insulating medium layer 4 that first will remove location hole 17 belows during perforation, during perforation, adopt picosecond laser bundle or dark pasc reaction ion etching method to bore a hole, by forming the back pole plate structure of Electret Condencer Microphone after above-mentioned technique;
F, provide vibrating diaphragm silica-based 9, and etch shallow hole 10 in the center of vibrating diaphragm silica-based 9, described shallow hole 10 is connected with the shallow slot 8 of silica-based 9 one ends of vibrating diaphragm;
As shown in Figure 8: described shallow hole 10 and shallow slot 8 carry out etching by the dry etching method, the degree of depth of shallow hole 10 and shallow slot 8 is consistent, the degree of depth of shallow hole 10 is 2 microns to 3 microns, shallow slot 8 and shallow hole 10 are that same processing step preparation forms, can guarantee not contacting of 6 connecting lines of vibrating diaphragm body thin film 12 and bottom electrode by shallow slot 8, avoid short circuit; The existence of shallow slot 8 can not affect the above acoustical behavior of microphone 50Hz;
G, on above-mentioned vibrating diaphragm silica-based 9 growth insulation support layer 11, described insulation support layer 11 covers two corresponding surfaces of vibrating diaphragm silica-based 9;
As shown in Figure 9: described insulation support layer 11 is the silicon dioxide layer that forms on vibrating diaphragm silica-based 9 by thermal oxidation method, and the thickness of insulation support layer 11 is the 100nm left and right;
H, on the insulation support layer 11 of above-mentioned vibrating diaphragm silica-based 9 deposit vibrating diaphragm body thin film 12, described vibrating diaphragm body thin film 12 covers the insulation support layers 11 on vibrating diaphragms silica-based 9 corresponding surfaces;
As shown in figure 10: described vibrating diaphragm body thin film 12 is formed on the insulation support layer 11 on vibrating diaphragm silica-based 9 corresponding surfaces by LPCVD (low-pressure chemical vapor deposition) coprecipitation mode, and the material of vibrating diaphragm body thin film 12 comprises conductive polycrystalline silicon or monocrystalline silicon; After obtaining vibrating diaphragm body thin film 12, remove residual stress on vibrating diaphragm body thin film 12 by the high annealing mode, the residual stress that obtains vibrating diaphragm body thin film 12 is 0; The temperature of high annealing is 1000～1100 degree, and the thickness of vibrating diaphragm body thin film 12 is 0.7 micron～1.2 microns;
I, remove on vibrating diaphragm silica-based 9 corresponding to the vibrating diaphragm body thin film 12 that shallow hole 10 opposite side surfaces are set;
As shown in figure 11: remove vibrating diaphragm silica-based 9 corresponding to the vibrating diaphragm body thin film 12 that shallow hole 10 another sides are set by the dry etching method, vibrating diaphragm silica-based 9 corresponding to the vibrating diaphragm body thin film 12 that shallow hole 10 1 side surfaces are set as vibrating diaphragm;
J, on two surfaces of above-mentioned vibrating diaphragm silica-based 9 deposit mask layer 13, described mask layer 13 is covered in vibrating diaphragm silica-based 9 corresponding surface;
As shown in figure 12: described mask layer 13 is the silicon nitride layer that forms by LPCVD, and the thickness of mask layer 13 is 100nm, by the mask of mask layer 13 as potassium hydroxide or tetramethyl aqua ammonia bulk silicon etching;
K, removal above-mentioned vibrating diaphragm silica-based 9 keep the mask layer 13 of silica-based 9 another sides of vibrating diaphragm corresponding to the mask layer 13 that shallow hole 10 1 side surfaces are set;
As shown in figure 13: in order to access vibrating diaphragm, need to be with vibrating diaphragm silica-based 9 corresponding to the mask layer 13 that shallow hole 10 surfaces are set, after removing mask layer 13, make vibrating diaphragm body thin film 12 surfaces expose;
L, the lip-deep mask layer 13 of etching vibrating diaphragm silica-based 9 and insulation support layer 11 keep the mask layer 13 and the insulation support layer 11 that are positioned at silica-based 9 end edge of vibrating diaphragm; Form etching window 21 on vibrating diaphragm silica-based 9, described etching window 21 extends to the surface of vibrating diaphragm silica-based 9 from mask layer 13 surfaces;
As shown in figure 14: by photoetching and dry etching method etching vibrating diaphragm silica-based 9 corresponding to part mask layer 13 and insulation support layer 11 that shallow hole 10 another sides are set, thereby form etching window 21 on vibrating diaphragm silica-based 9, the axis of the axis of described etching window 21 and vibrating diaphragm silica-based 9 is located along the same line; Etching window 21 and shallow hole 10 are positioned at surface corresponding to vibrating diaphragm silica-based 9;
M, utilize 21 pairs of vibrating diaphragms of above-mentioned etching window silica-based 9 to carry out etching, obtain being positioned at the dell 14 of vibrating diaphragm silica-based 9, described dell 14 connects vibrating diaphragms silica-based 9;
As shown in figure 15: carry out the body silicon etching by potassium hydroxide solution or tetramethyl aqua ammonia, obtain dell 14, etch into insulation support layer 11 during etching dell 14 always;
N, above-mentioned vibrating diaphragm silica-based 9 is installed on back pole plate silica-based 1 by eutectic bonding corresponding to the surface that vibrating diaphragm body thin film 12 is set, vibrating diaphragm body thin film 12 is electrically connected to cmos circuit 2 by metal bonding layer 7.
When vibrating diaphragm silica-based 9 was installed on back pole plate silica-based 1 by the eutectic bonding method, the contiguous cmos circuit 2 of shallow slot 8 on vibrating diaphragm silica-based 9 can be avoided the short circuit that connects by shallow slot 8.
As Fig. 1～shown in Figure 16: during work, the output of cmos circuit 2 is connected with external detection equipment, 6 of vibrating diaphragm body thin film 12 and bottom electrodes form capacitance structures.When having sound, the outside enters from dell 14 or sound hole 18; The sound that enters dell 14 or sound hole 18 can produce active forces to vibrating diaphragm body thin film 12, and the surface of vibrating diaphragm body thin film 12 is subject to active force can produce corresponding deformation.When deformation occured for vibrating diaphragm body thin film 12, vibrating diaphragm body thin film 12 forms capacitance structures with 6 of bottom electrodes, and corresponding variation also can occur, and carried out exporting change by output 20 after the charge pump by cmos circuit 2 and amplifier, detected the voice signal of correspondence.
Back pole plate of the present invention is realized on back pole plate silica-based 1, the diameter in sound hole 18 is designed to 50 microns to 100 microns, can directly bore a hole to 300 microns back pole plates to 500 micron thickness silica-based 1 with laser beam or dark pasc reaction ion etching method fully, not need back pole plate silica-based 1 is carried out attenuate.And on the back pole plate that usually designs, sound hole 18 sizes are several microns, can't realize with laser beam technique; If with dark pasc reaction ion etching method, because of the restriction of the etching depth-to-width ratio of its technique, realize several microns sound hole perforation, need to carry out attenuate to back pole plate silica-based 1.And back pole plate Design ﹠ preparation method of the present invention when guaranteeing microphone property, has been simplified preparation technology, has realized the compatibility of cmos circuit 2 with silicon microphone back pole plate technique, and can be integrated on same back pole plate silica-based 1.7 single one steps of techniques of use of bonding metal layer required when the bottom electrode 6 of microphone and eutectic bonding complete, and have further simplified technological process.Metal-silicon eutectic bonding method can when realizing microphone diaphragm silicon chip and back pole plate bonding, realize that circuit connects the conductive polycrystalline silicon vibrating diaphragm to the link 5 of cmos amplifier circuit.Shallow slot 8 degree of depth on vibrating diaphragm silica-based 9 are between 2 microns to 3 microns, its role is to guarantee that vibrating diaphragm body thin film 12 and below are positioned at bottom electrode 6 and do not contact between the metal lead wire of cmos amplifier circuit 2 inputs, avoid short circuit.The design of shallow slot 8 can cause frequency acoustic to leak, but can not affect the desired acoustical behavior more than 50 hertz of silicon microphone.Form the vibrating diaphragm body thin film 12 of vibrating diaphragm by LPCVD method precipitation, subsequently by the mode of high annealing, reduce residual stress close to zero.Carry out the corrosion of body silicon with potassium hydroxide or tetramethyl Dilute Ammonia Solution, form the dell 14 of microphone.Metal-silicon eutectic bonding method is finally completed the bonding of microphone diaphragm silica-based 9 and back pole plate silica-based 1, realizes the vertical integrated MEMS silicon microphone chip preparation of cmos circuit.
Claims (5)
1. the MEMS silicon microphone preparation method with the cmos circuit Top-down design, is characterized in that, described MEMS silicon microphone preparation method comprises the steps:
(a), provide the have cmos circuit back pole plate silica-based (1) of (2);
(b), at above-mentioned back pole plate silica-based (1) corresponding to the surface deposition electric insulation layer that forms cmos circuit (2), described electric insulation layer is covered in the surface of back pole plate silica-based (1);
(c), optionally shelter with etching and be covered in electric insulation layer on cmos circuit (2), cmos circuit (2) corresponding directly over form input link slot (15) and output link slot (16), described input link slot (15) is by being positioned at the electric insulation layer and output link slot (16) isolation of cmos circuit (2) center;
(d), at above-mentioned back pole plate silica-based (1) corresponding to the surface deposition metal level that electric insulation layer is set, described metal level is covered on electric insulation layer, and be filled in input link slot (15) and output link slot (16), and at upper metal bonding layer (7) and the bottom electrode (6) of forming of back pole plate silica-based (1);
(e), bore a hole corresponding to the surface that bottom electrode (6) is set at above-mentioned back pole plate silica-based (1), in the upper some sound holes (18) that form of back pole plate silica-based (1), described sound hole (18) is from the surface of bottom electrode (6) to downward-extension and connect back pole plate silica-based (1);
(f), provide vibrating diaphragm silica-based (9), and etch shallow hole (10) in the center of vibrating diaphragm silica-based (9), described shallow hole (10) is connected with the shallow slot (8) of silica-based (9) one ends of vibrating diaphragm;
(g), at the upper growth of above-mentioned vibrating diaphragm silica-based (9) insulation support layer (11), described insulation support layer (11) covers two corresponding surfaces of vibrating diaphragm silica-based (9);
(h), at the upper deposit vibrating diaphragm body thin film (12) of the insulation support layer (11) of above-mentioned vibrating diaphragm silica-based (9), described vibrating diaphragm body thin film (12) covers the insulation support layer (11) on silica-based (9) two surfaces of vibrating diaphragm;
(i), remove vibrating diaphragm silica-based (9) upward corresponding to the vibrating diaphragm body thin film (12) that shallow hole (10) opposite side surface is set;
(j), on two surfaces of above-mentioned vibrating diaphragm silica-based (9) deposit mask layer (13), described mask layer (13) is covered in vibrating diaphragm silica-based (9) corresponding surface;
(k), remove above-mentioned vibrating diaphragm silica-based (9) corresponding to the mask layer that shallow hole (10) one side surfaces are set (13), keep the mask layer (13) of vibrating diaphragm silica-based (9) another side;
(l), etching vibrating diaphragm silica-based (9) lip-deep mask layers (13) and insulation support layer (11), keep the mask layer (13) and the insulation support layer (11) that are positioned at vibrating diaphragm silica-based (9) end edge; In the upper etching window (21) that forms of vibrating diaphragm silica-based (9), described etching window (21) extends to the surface of vibrating diaphragm silica-based (9) from mask layer (13) surface;
(m), utilize above-mentioned etching window (21) to carry out etching to vibrating diaphragm silica-based (9), obtain being positioned at the dell (14) of vibrating diaphragm silica-based (9), described dell (14) connects vibrating diaphragm silica-based (9);
(n), above-mentioned vibrating diaphragm silica-based (9) is installed on back pole plate silica-based (1) by eutectic bonding corresponding to the surface that vibrating diaphragm body thin film (12) is set, vibrating diaphragm body thin film (12) is electrically connected to cmos circuit (2) by metal bonding layer (7).
2. the MEMS silicon microphone preparation method of according to claim 1 and cmos circuit Top-down design, it is characterized in that: in described step (h), after vibrating diaphragm body thin film (12) is deposited on insulation support layer (11), and remove the residual stress of vibrating diaphragm body thin film (12) by high annealing; The material of vibrating diaphragm body thin film (12) is conductive polycrystalline silicon or monocrystalline silicon.
3. the MEMS silicon microphone preparation method of according to claim 1 and cmos circuit Top-down design, it is characterized in that: the temperature of described vibrating diaphragm body thin film (12) high annealing is 1000 ~ 1100 degree; The thickness of vibrating diaphragm body thin film (12) is 0.7 ~ 1.2 μ m.
4. the MEMS silicon microphone preparation method of according to claim 1 and cmos circuit Top-down design, it is characterized in that: described mask layer (13) is silicon nitride film, and the thickness of mask layer (13) is 100nm.
5. the MEMS silicon microphone preparation method of according to claim 1 and cmos circuit Top-down design, it is characterized in that: the degree of depth of described shallow hole (10) is 2 ~ 3 μ m, and the degree of depth of shallow slot (8) is consistent with the degree of depth of shallow hole (10); Described shallow slot (8) is made for same processing step with shallow hole (10).
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| CN102611975B (en) * | 2012-01-20 | 2014-04-23 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
| CN102740207B (en) * | 2012-06-15 | 2015-08-05 | 歌尔声学股份有限公司 | Chip of a kind of integrated silicon micro-microphone and CMOS integrated circuit and preparation method thereof |
| CN103139691B (en) * | 2013-02-22 | 2015-03-11 | 上海微联传感科技有限公司 | Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof |
| CN103347241B (en) * | 2013-07-03 | 2018-08-28 | 上海集成电路研发中心有限公司 | capacitor type silicon microphone chip and preparation method thereof |
| JP2015182158A (en) * | 2014-03-24 | 2015-10-22 | セイコーエプソン株式会社 | MEMS device |
| CN105523518B (en) * | 2014-09-29 | 2017-08-08 | 原相科技股份有限公司 | Microcomputer electric component with low substrate coupling effect |
| CN104378724A (en) * | 2014-11-18 | 2015-02-25 | 缪建民 | MEMS silicon microphone without large back acoustic cavity |
| CN110366089B (en) * | 2018-04-11 | 2021-02-23 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
| CN109743670B (en) * | 2018-12-27 | 2021-03-23 | 深圳市新厚泰塑胶电子有限公司 | Design method for controlling initial phase of ECM |
| TWI732228B (en) * | 2019-02-19 | 2021-07-01 | 美律實業股份有限公司 | Microphone package structure |
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