CN108622843A - MEMS microphone and forming method thereof - Google Patents
MEMS microphone and forming method thereof Download PDFInfo
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- CN108622843A CN108622843A CN201710175110.5A CN201710175110A CN108622843A CN 108622843 A CN108622843 A CN 108622843A CN 201710175110 A CN201710175110 A CN 201710175110A CN 108622843 A CN108622843 A CN 108622843A
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- film
- shakes
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- piece
- shake
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0096—For avoiding stiction when the device is in use, i.e. after manufacture has been completed
- B81C1/00976—Control methods for avoiding stiction, e.g. controlling the bias voltage
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
Abstract
A kind of MEMS microphone of present invention offer and forming method thereof, the MEMS microphone includes：Backplane film, the backplane film include opposite the first face and the second face, and the backplane film includes functional areas and surrounds the Support of the functional areas；The piece film that shakes on first face of backplane film, the functional areas, which shake in piece film, has first to shake film perforation, and described first shakes film perforation through the piece film that shakes；The separator to shake in film perforation positioned at described first, the separator protrude from the piece film that shakes towards the face of backplane film；Support element between the backplane film and the piece film that shakes of the Support.The separator can play the role of shaking piece film and backplane film described in support, and so as to prevent from shaking, piece film is contacted with the backplane film, and then the piece film that can prevent from shaking mutually is adsorbed with the backplane film, influences the normal work of MEMS microphone.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of MEMS microphone and forming method thereof.
Background technology
MEMS, that is, MEMS (Microelectro Mechanical Systems), is in microelectric technique basis
On the research frontier of multi-crossed disciplines that grows up.By development in more than 40 years, it has also become attract attention great in the world
One of sciemtifec and technical sphere.It is related to a variety of subjects such as electronics, machinery, material, physics, chemistry, biology, medicine and technology, tool
Have broad application prospects.
MEMS (Micro Electro Mechanical System) microphone is the microphone manufactured based on MEMS technology, is exactly briefly an electricity
Container is integrated on micro- silicon wafer.MEMS microphone can bear very high Reflow Soldering temperature, be easy and cmos device and other
Voicefrequency circuit is integrated, and has low-noise performance, to make it using more and more extensive.
The composition of MEMS microphone is usually anti-interference by MEMS tiny currents, micro- integrated converting circuit, the operatic tunes, RF
These parts of circuit composition.The micro- capacitance cartridges of MEMS include the silicon vibrating diaphragm and silicon backplane for receiving sound, and silicon vibrating diaphragm can be straight
Audio signal is received, micro- integrated circuit, audio of micro- integrated circuit high resistant are transferred to by MEMS tiny currents
The electric signal of low-resistance is converted and zoomed into electric signal, while being filtered through RF anti-noise circuits, output and the matched telecommunications of front end circuit
Number, just complete acoustic-electric conversion.By the reading to electric signal, to realize the identification to sound.
The performance for the MEMS microphone that the prior art is formed is poor.
Invention content
Problems solved by the invention is to provide a kind of MEMS microphone and forming method thereof, can improve MEMS microphone
Performance.
To solve the above problems, the present invention provides a kind of MEMS microphone, including：Backplane film, the backplane film includes phase
To the first face and the second face, the backplane film includes functional areas and surrounds the Support of the functional areas；Positioned at the backplane
The piece film that shakes on the first face of film, the functional areas, which shake in piece film, has first to shake film perforation, and described first film perforation that shakes shakes through described
Piece film, the functional areas, which shake, has gap between piece film and backplane film；The separator to shake in film perforation positioned at described first, it is described every
Off member protrudes from the piece film that shakes towards the face of backplane film；Support between the backplane film and the piece film that shakes of the Support
Part.
Optionally, the material of the separator is silicon nitride or silicon oxynitride.
Optionally, the functional areas first, which shake in piece film, also has second to shake film perforation, and described second shakes film perforation through described
Shake piece film.
Optionally, described first shake film perforation number be it is multiple, described second shake film perforation number be it is multiple, described second
The film perforation that shakes surround described first shake film perforation arrangement.
Optionally, described first film perforation that shakes is circular hole, and described first shakes a diameter of 0.2 μm~10 μm of film perforation；Adjacent
One spacing shaken between film perforation is 20 μm~100 μm.
Optionally, there is back of the body chamber in the second face of the functional areas backplane film, there is the back of the body in the backplane film in the back of the body bottom of chamber portion
The backplane film is run through in pole hole, the backplane hole.
Optionally, the separator includes towards the end face of the backplane film, and the end face shakes piece film surface described in
Distance is 0.05 μm~0.5 μm.
Correspondingly, the present invention also provides a kind of forming methods of MEMS microphone, including：Back pole plate, the backplane are provided
Plate includes opposite the first face and the second face, and the back pole plate includes functional areas and surrounds the Support of the functional areas；Institute
It states and forms supporting layer on the first face of back pole plate；It is formed and is shaken piece film on the supporting layer, the functional areas shake piece film and supporting layer
In have first to shake film perforation, described first film perforation that shakes shakes through the functional areas and piece film and extends in the supporting layer；Institute
It states first and shakes and form separator in film perforation, the separator piece film that shakes described in extends in the supporting layer；Formed it is described every
After off member, reduction processing is carried out to second face of functional areas back pole plate, the back pole plate is made to form backplane film；Form backplane
After film, the supporting layer of the functional areas is removed, support element is formed between the Support backplane film and the piece film that shakes.
Optionally, the material of the separator is silicon nitride or silicon oxynitride.
Optionally, the step of forming the separator include：It shakes film perforation bottom and side wall surface described first, Yi Jisuo
It states and forms separation layer on the piece film that shakes；Some or all of shake on piece film separation layer described in removal, forms separator.
Optionally, the technique of separation layer of some or all of shaking described in removal on piece film includes dry etch process.
Optionally, the thickness of the separation layer is 0.05 μm~0.5 μm.
Optionally, the functional areas, which shake in piece film, also has second to shake film perforation, and described second shakes film perforation through the piece that shakes
Film.
Optionally, described second film perforation that shakes extends in the supporting layer；Shake described in formation piece film the step of include：Institute
It states and forms the piece film that initially shakes on supporting layer；First graphical treatment carried out to the initial piece film that shakes, formation shake piece film and from
First film perforation and second that shakes that the piece film that shakes extends in the supporting layer shakes film perforation.
Optionally, the step of carrying out the first graphical treatment to shake piece film and the supporting layer include：In the piece film that shakes
It is upper to form patterned mask layer；Piece film is shaken to described and supporting layer performs etching, using the mask layer as mask described in formation
First film perforation and second that shakes shakes film perforation.
Optionally, described first shake film perforation and second shake film perforation number be it is multiple, described second shake film perforation surround described in
First shake film perforation arrangement.
Optionally, the first depth for shaking film perforation is 0.05 μm~0.5 μm in the supporting layer.
Optionally, described first film perforation that shakes is circular hole, and described first shakes a diameter of 0.2 μm~10 μm of film perforation；Described
One spacing shaken between film perforation is 20 μm~100 μm.
Optionally, after reduction processing, further include：Second graphical processing is carried out to the functional areas backplane film, in institute
It states and forms backplane hole in the backplane film of functional areas, the backplane film is run through in the backplane hole.
Optionally, it shakes described in formation before piece film, further includes：Second graph is carried out to first face of functional areas back pole plate
Change is handled, and backplane hole is formed in first face of functional areas back pole plate；The reduction processing is in the functional areas backplane film
Back of the body chamber is formed in two faces, and the backplane hole is made to run through the backplane film.
Compared with prior art, technical scheme of the present invention has the following advantages：
In the MEMS microphone that technical solution of the present invention provides, described first, which shakes, has separator, the isolation in film perforation
Part protrudes from the piece film that shakes towards the face of backplane film.When being formed by MEMS microphone during the work time, piece film is shaken outside
When occuring bending and deformation under force effect, the separator can play the role of shake described in isolation piece film and backplane film, so as to
The piece film that enough prevents from shaking is contacted with the backplane film, and then the piece film that can prevent from shaking mutually is adsorbed with the backplane film, influences MEMS
The normal work of microphone.In addition, shaking described first forms separator in film perforation, the separator can be made towards the back of the body
The end face of pole film shake described in piece film surface distance it is smaller, to be not easy to reduce the functional areas shake piece film and backplane film it
Between gap size, to the flexural deformation of piece film of shaking described in being not easy to influence, and then can ensure the property for being formed by MEMS
Energy.
In the forming method for the MEMS microphone that technical solution of the present invention provides, shakes described first and form isolation in film perforation
Part, the separator protrude from the piece film that shakes towards the face of backplane film.When being formed by MEMS microphone during the work time,
When the piece film that shakes occurs bending and deformation under external force, the separator can play the work of shake described in isolation piece film and backplane film
With, so as to prevent from shaking, piece film is contacted with the backplane film, and then the piece film that can prevent from shaking mutually is adsorbed with the backplane film,
Influence the normal work of MEMS microphone.Therefore, the forming method can improve the performance of MEMS microphone.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of MEMS microphone；
Fig. 2 to Figure 13 is the structural schematic diagram of each step of one embodiment of forming method of the MEMS microphone of the present invention.
Specific implementation mode
There are problems for the MEMS microphone of the prior art, such as：The performance of MEMS microphone is poor.
In conjunction with a kind of MEMS microphone, the poor reason of the MEMS microphone performance is analyzed：
Fig. 1 is a kind of structural schematic diagram of MEMS microphone.
Referring to FIG. 1, the MEMS microphone includes：Silicon shakes piece 11 and silicon backplane 12, and the silicon shakes piece 11 and silicon backplane
12 both ends are connected by support element 10；The silicon is separately connected to shake the pad 13 of piece 11 and silicon backplane 12.
Wherein, at work, the silicon piece 11 that shakes occurs bending and deformation the MEMS microphone under the pressure of sound wave, and silicon is made to shake
The distance between piece 11 and silicon backplane 12 change, to the capacitance of make silicon shake capacitor that piece 11 and silicon backplane 12 are formed
Change therewith, to export electric signal.However, since the silicon shakes, piece 11 is easy in bending process to be contacted with silicon backplane 12,
Microphone is caused to fail.
In addition, silicon shakes, piece 11 can be attached together with silicon backplane 12 due to electrostatic attraction or intermolecular Van der Waals force, from
And after causing external force to disappear, the silicon piece 11 that shakes is not easy to separate with silicon backplane 12, influences the normal work of MEMS microphone, makes
The performance of MEMS microphone is poor.
To solve the technical problem, the present invention provides a kind of MEMS microphones, including：Backplane film, the backplane film
Including opposite the first face and the second face, the backplane film includes functional areas and surrounds the Support of the functional areas；Positioned at institute
State the piece film that shakes on the first face of backplane film, the functional areas, which shake in piece film, has first to shake film perforation, and described first film perforation that shakes runs through
The piece film that shakes, the functional areas, which shake, has gap between piece film and backplane film；The separator to shake in film perforation positioned at described first,
The separator protrudes from the piece film that shakes towards the face of backplane film；Between the backplane film and the piece film that shakes of the Support
Support element.
Wherein, described first shakes and has separator in film perforation, and the separator protrudes from the piece film that shakes towards backplane film
Face.When being formed by MEMS microphone during the work time, when the piece film that shakes occurs bending and deformation under external force, it is described every
Off member can play the role of shake described in isolation piece film and backplane film, and so as to prevent from shaking, piece film is contacted with the backplane film,
And then the piece film that can prevent from shaking mutually is adsorbed with the backplane film, influences the normal work of MEMS microphone.In addition, described
One, which shakes, forms separator in film perforation, can make the separator towards the end face of the backplane film shake described in piece film surface away from
From smaller, shake the size in gap between piece film and backplane film to be not easy to reduce the functional areas, to be not easy to influence institute
The flexural deformation for the piece film that shakes is stated, and then can ensure the performance for being formed by MEMS.
To make the above purposes, features and advantages of the invention more obvious and understandable, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 2 to Figure 10 is the structural schematic diagram of each step of one embodiment of forming method of the MEMS microphone of the present invention.
Referring to FIG. 2, providing back pole plate 100, the back pole plate 100 includes opposite the first face 101 and the second face 102,
The back pole plate 100 includes functional areas A and surrounds the Support B of the functional areas A.
The back pole plate 100 is used to be subsequently formed the backplane film of MEMS microphone.100 functional areas A of the back pole plate is used for
It is subsequently formed backplane hole.For being subsequently formed support element on the Support B.
In the present embodiment, the material of the back pole plate 100 is silicon.In other embodiments, the material of the back pole plate is also
Can be germanium or SiGe.
Referring to FIG. 3, second graphical processing is carried out to 100 first face 101 of functional areas A back pole plates, in the work(
Backplane hole 103 can be formed in area's A back pole plates 100.
The backplane hole 103 is used for as the air gap that flows in and out the backplane film 104 between the piece film 120 that shakes
Channel.
In the present embodiment, the step of second graphical processing, includes：In 100 first face of functional areas A back pole plates
Graph layer is formed on 101；Using the graph layer as mask, the back pole plate 100 is performed etching, in the functional areas A backplanes
Backplane hole 103 is formed in plate 100.
In the present embodiment, the back pole plate 100 is not run through in the backplane hole 103.In other embodiments, the backplane hole
It may also extend through the back pole plate.
In the present embodiment, the back pole plate 100 is performed etching by dry etch process.
Referring to FIG. 4, forming supporting layer 110 on 100 first face 101 of the back pole plate.
The supporting layer 110 is subsequently used for forming support element.
In the present embodiment, the material of the supporting layer 110 is silica.In other embodiments, the material of the supporting layer
Material can also be silicon oxynitride.
In the present embodiment, the technique for forming the supporting layer 110 includes：Chemical vapor deposition method, physical vapour deposition (PVD)
Technique or atom layer deposition process.
In the present embodiment, the supporting layer 110 is also located at 103 bottom and top of backplane hole.
It is formed and is shaken piece film subsequently on the supporting layer 110, the functional areas A, which shakes in piece film and supporting layer 110, has the
One shakes film perforation, and described first film perforation that shakes shakes through the functional areas A and piece film and extends in the supporting layer 110.
Also have second to shake film perforation in the present embodiment, in the piece film that shakes, shake described in formation piece film the step of such as Fig. 5 to scheming
Shown in 7.
The piece film that initially shakes is formed on the supporting layer 110, the initial piece film that shakes is across 103 top of the backplane hole.
In the present embodiment, formed it is described it is initial shake piece film the step of it is as shown in Figure 5 and Figure 6.
Referring to FIG. 5, providing composite structure, the composite structure includes the initial piece film 120 that shakes；To the composite structure
The initial piece film 120 that shakes carries out being bonded processing with 100 first face 101 of the back pole plate.
In the present embodiment, the composite structure further includes substrate 105, positioned at the substrate 105 and it is initial shake piece film 120 it
Between stop-layer 131.
The initial piece film 120 that shakes is for being subsequently formed the piece film that shakes.The substrate 105 is used to support the initial piece film that shakes
120, to be conducive to be bonded.The stop-layer 131 may be used also for controlling the process of substrate described in subsequent etching 105
For being subsequently formed mask layer.
In the present embodiment, the material of the supporting layer 110 is silicon.In other embodiments, the material of the supporting layer is also
Can be germanium or SiGe.
In the present embodiment, the material of the stop-layer 131 is silica.
In the present embodiment, the material of the substrate 105 is silicon, germanium or SiGe.
Referring to FIG. 6, after the bonding processing, the substrate 105 (as shown in Figure 5) is removed.
In the present embodiment, the technique for removing the substrate 105 includes dry etch process.In other embodiments, it removes
The technique of the substrate may include wet-etching technology.
In the present embodiment, during removing substrate 105, the stop-layer 131 can be used for the substrate
105 processes performed etching are controlled, and the loss to the piece film 120 that initially shakes is reduced.
Referring to FIG. 7, carrying out the first graphical treatment to the initial film 120 and supporting layer 110, the piece film 123 that shakes is formed
And the film perforation 121 and second that shakes of shake that piece film 123 extends in the supporting layer 110 described in first shakes film perforation 122.
Described first shake film perforation 121 be subsequently used for accommodate separator；Described second shakes film perforation 122 for making air pass in and out institute
State the gap to shake between piece film 123 and the backplane film being subsequently formed.
In the present embodiment, the step of first graphical treatment, includes：It shakes on piece film 120 (as shown in Figure 6) described
Form patterned mask layer 132；It is mask to initial piece film 120 and the supporting layer 110 of shaking with the mask layer 132
It performs etching, forms first film perforation 121 and second that shakes and shake film perforation 122.
In other embodiments, it can also shake film perforation without described second in the piece film that shakes.
For simplification of flowsheet, described first shakes film perforation 121 and second film perforation 122 that shakes is formed in same technique, to
Described second film perforation 122 that shakes also extends in the supporting layer 110.
The step of forming the mask layer 132 include：Patterned first photoresist is formed on the stop-layer 131；
The stop-layer 131 is performed etching using first photoresist as mask, forms mask layer 132, the functional areas A mask layers
There are multiple openings, the open bottom to expose the initial piece film 120 that shakes in 132.
The opening is in subsequent etching process, making the initial piece film 120 that shakes of the open bottom be etched, shape
It shakes film perforation 122 at first film perforation 121 and second that shakes.
There is obtuse angle angle (not shown) between the side wall of the opening and the initial piece film surface of shaking, to make
The open top size is larger, shakes film perforation to which the separation layer for being easy to make to be subsequently formed passes through the opening and enters described first
121。
Described first shake film perforation 121 and second shake film perforation 122 be circular hole, described first shake film perforation 121 number be it is multiple,
Described second number for shaking film perforation 122 is multiple.
In the present embodiment, described first shake film perforation 121 surround described second shake film perforation 122 arrangement.
If first in the supporting layer 110 shake film perforation 121 and second shake film perforation 122 depth it is excessive, follow-up shape
At separator towards the end face of the back pole plate 100 to the piece film 123 that shakes distance it is excessive, be formed by MEMS microphone
In the course of work, the bending for the piece film 123 that shakes described in the easy influence of the separator, to influence to be formed by MEMS microphone
Performance；If first in the supporting layer 110 shake film perforation 121 and second shake film perforation 122 depth it is too small, be subsequently formed
The distance of separator towards the end face of the back pole plate 100 to the piece film 123 that shakes is too small, be unfavorable for inhibiting to shake piece film 123 with it is follow-up
The backplane film of formation contacts.Specifically, first in the supporting layer 110 shake film perforation 121 and second shake film perforation 122 depth be
0.05 μm~0.5 μm.
If described first shake film perforation 121 diameter it is excessive, be easy to influence described in shake the intensity of piece film 120；If described
First shake film perforation 121 diameter it is too small, being unfavorable for subsequently shaking described first forms separation layer in film perforation 121.In the present embodiment,
Described first film perforation 121 that shakes is identical as described second diameter of film perforation 122 that shakes.Specifically, described first shakes film perforation 121 and described
Second a diameter of 0.2 μm~10 μm m for shaking film perforation 122.
It subsequently shakes described first and forms separator in film perforation 121, the separator piece film 123 that shakes described in extends to institute
It states in supporting layer 110.
In the present embodiment, the step of forming the separator, is as shown in Figure 8 and Figure 9.
Referring to FIG. 8, described first shake formed on 121 bottom and side wall surface of film perforation and the piece film 123 that shakes every
Absciss layer 150.
The separation layer 150 is subsequently used for forming separator.
In the present embodiment, the material of the separation layer 150 is silicon nitride.Silicon nitride is electrical insulator, and is subsequently formed
After the contact of backplane film, it is not easy to the charge in backplane film is influenced, to be not easy to influence backplane film and the electricity for the formation of piece film 123 of shaking
The capacitance of container；The intensity of silicon nitride is higher, it is not easy to be broken.In other embodiments, the material of the separation layer can be with
For silicon oxynitride.
In the present embodiment, the technique for forming the separation layer 150 includes chemical vapor deposition method or physical vapour deposition (PVD)
Technique.
If the thickness of the separation layer 150 is excessive, it is easy to bring difficulty to subsequent etching technics；If the isolation
The thickness of layer 150 is too small, and the separator for being easy to make to be subsequently formed is broken during the work time.Specifically, in the present embodiment,
The thickness of the separation layer 150 is 0.05 μm~0.5 μm.
Referring to FIG. 9, the separation layer 150 that some or all of shakes on piece film 123 described in removal, forms separator 151.
It should be noted that the separator 151 protrudes from the piece film 123 that shakes towards the face of back pole plate 200.When institute's shape
At MEMS microphone during the work time, when the piece film 123 that shakes occurs bending and deformation under external force, the separator 151
Can play the role of shake described in support piece film 123 and the backplane film that is subsequently formed, so as to prevent from shaking piece film 123 with it is described
Backplane film contacts, and then the piece film 123 that can prevent from shaking mutually is adsorbed with the backplane film, influences the normal work of MEMS microphone
Make.Therefore, the forming method can improve the performance of MEMS microphone.In addition, described first shake formed in film perforation 121 every
Off member 151, can make the separator 151 towards the end face of the back pole plate 100 shake described in 123 surface of piece film distance compared with
It is small, it shakes the size in gap between piece film 123 and the backplane film being subsequently formed to be not easy to reduce the functional areas A, to not
It shakes described in being easy to influence the flexural deformation of piece film 123, and then improves the performance for being formed by MEMS, such as：Institute's shape can be improved
At the sensitivity of MEMS, and energy loss is reduced, improves quality factor.
Some or all of shake in the present embodiment, described in removal on piece film 123 separation layer 150 the step of include：Described
Patterned second photoresist is formed on separation layer 150；The separation layer 150 is carved using second photoresist as mask
Erosion forms separator 151.
In the present embodiment, the technique performed etching to the separation layer 150 includes dry etch process.Dry etching has
Good line width control, can accurately control the position of the separation layer 150 of removal, to form the separator 151 of structural integrity.
In other embodiments, the separation layer can also be performed etching by wet-etching technology.
In the present embodiment, described second film perforation 122 that shakes surrounds described first and shakes the arrangement of film perforation 121, then described second shakes piece
Hole 122 is located at the periphery of the separator 151, i.e., the described separator 151 shakes 123 center of piece film close to the functional areas A.Due to shaking
Piece film 123 during the work time, is easiest to bend by paracentral region, and amount of deflection is larger, the back of the body for being easy and being subsequently formed
The contact of pole film, therefore, the separator 151 can effectively inhibit the piece film 123 that shakes close to 123 centers of piece film that shake the functional areas A
It is contacted with backplane film, and then improves the performance for being formed by MEMS microphone.
In the present embodiment, further include：Remove the described second separation layer 150 to shake in film perforation 122.Described second is removed to shake piece
Separation layer 150 in hole 122 can increase gas disengaging and shake the channel in gap between piece film 123 and backplane film, to be conducive to
Improve the working efficiency of formed MEMS microphone.In other embodiments, can also retain described second shake in film perforation every
Absciss layer.
The forming method further includes：Shake part or wholly off layer 132 on piece film 123 described in removal, exposes function
The piece film 123 that shakes of area A and Support B.
It is subsequently formed the first pad of the piece film 123 that shakes described in connection；Form the second pad for connecting the back pole plate 100.
In the present embodiment, the step of forming first pad and the second pad, is as shown in Figure 10 and Figure 11.
Referring to FIG. 10, being performed etching to the Support B supporting layers 110, the shape in the Support B supporting layers 110
At pad hole 140,140 bottom-exposed of the pad hole goes out the back pole plate 100.
The pad hole 140 is for subsequently accommodating the second pad.
In the present embodiment, the technique performed etching to the Support B supporting layers 110 includes dry etching or wet etching
Technique.
1 is please referred to Fig.1, shakes in the Support B and forms the first pad 141 on piece film 123；The pad hole 140 (such as
Shown in Figure 10) the second pad 142 of middle formation.
First pad 141 is electrically connected for realizing shake piece film 123 and the external circuit；Second pad
142 being electrically connected for realizing the backplane film being subsequently formed and external circuit.
In the present embodiment, the material of first pad, 141 and second pad 142 is copper or tungsten.
2 are please referred to Fig.1, is formed after the separator 151, to the second face 102 of the back pole plate 100 (as shown in figure 11)
Reduction processing is carried out, the back pole plate 100 is made to form backplane film 104.
The step of reduction processing includes：100 the second faces functional areas A 102 of the back pole plate and back pole plate 100 are supported
The second faces area B 102 carry out planarization process, reduce the thickness of the back pole plate 100；The functional areas A back pole plates 100 are carried out
Etching is thinned, the back pole plate 100 is made to form backplane film 104, and the backplane hole 103 is made to run through the backplane film 104.
The reduction processing forms back of the body chamber 105 in 104 second face 102 of functional areas A backplanes film, and makes the backplane
The backplane film 104 is run through in hole 103.
In the present embodiment, the technique of the planarization process includes passing through chemical mechanical milling tech.
In the present embodiment, the technique of the thinned etching includes dry etching or wet-etching technology.
The backplane hole 103 is used for as the air gap that flows in and out the backplane film 104 between the piece film 123 that shakes
Channel.
In the present embodiment, before the reduction processing, the backplane hole 103 is formed.It in other embodiments, can be with
After the reduction processing, second graphical processing is carried out to the first face of the functional areas backplane film, is carried on the back in the functional areas
Backplane hole is formed in the film of pole.
3 are please referred to Fig.1, is formed after backplane film 104, removes the supporting layer 110 (as shown in figure 12) of the functional areas A,
It shakes in the Support B and forms support element 111 between piece film 123 and backplane film 104.
The support element 111 makes between having between the backplane film 104 of the functional areas A and the piece film 123 that shakes of functional areas A
Gap, to make to be formed by MEMS microphone during the work time, the backplane film 104 can bend, described to make
The backplane film 104 of functional areas A and the distance between the piece film 123 that shakes of functional areas A change, to make the functional areas A's
Capacitance variations between backplane film 104 and the piece film 123 that shakes of functional areas A, and then convert voice signal to electric signal.
In the present embodiment, the technique for removing the supporting layer 110 of the functional areas A includes wet-etching technology.
It should be noted that 104 thickness of backplane film due to the functional areas A is smaller, and in functional areas A backplanes film 104
Supporting layer 110 with backplane hole 103, therefore the functional areas A is easily removed；However, due to the backplane of the Support B
104 thickness of film is larger, and the supporting layer 110 between Support B backplanes film 104 and the piece film 123 that shakes is not easily removed, to be formed
Support element 111.
To sum up, it in the forming method of MEMS microphone provided by the embodiment, shakes described first and forms separator in film perforation,
The separator protrudes from the piece film that shakes towards the face of backplane film.When being formed by MEMS microphone during the work time, shake
When piece film occurs bending and deformation under external force, the separator can play the work of shake described in isolation piece film and backplane film
With, so as to prevent from shaking, piece film is contacted with the backplane film, and then the piece film that can prevent from shaking mutually is adsorbed with the backplane film,
Influence the normal work of MEMS microphone.Therefore, the forming method can improve the performance of MEMS microphone.
2 are continued to refer to figure 1, the present invention also provides a kind of embodiments of MEMS microphone, including：Backplane film 104, the back of the body
Pole film 104 includes opposite the first face 101 and the second face 102, and the backplane film 104 includes functional areas A and surrounds the function
The Support B of area A；The piece film 123 that shakes on 104 first face 101 of the backplane film, the functional areas A, which shakes in piece film 123, to be had
There is first to shake film perforation 121, described first shakes film perforation 121 through the piece film 123 that shakes, and the functional areas A shakes piece film 123 and backplane
There is gap between film 104；The separator 151 to shake in film perforation 121 positioned at described first, the separator 151 protrude from described
Piece film 123 shake towards the face of backplane film 104；Support element between the backplane film 104 and the piece film 123 that shakes of the Support B
111。
There is backplane hole 103, the backplane hole 103 to run through the backplane film 104 in the functional areas A backplanes film 104.
In the present embodiment, the material of the separator 151 is silicon nitride or silicon oxynitride.
In the present embodiment, described first shake film perforation 121 and second shake film perforation 122 number be multiple, described second shakes piece
Hole 122 surround described first shake film perforation 121 arrangement.
Described first film perforation 121 that shakes is circular hole, and described first shakes a diameter of 0.2 μm~10 μm of film perforation 121；Adjacent first
The spacing shaken between film perforation 121 is 20 μm~100 μm.
The separator 151 includes towards the end face of the backplane film 104, and the end face shakes 123 surface of piece film described in
Distance be 0.05 μm~0.5 μm.
In the present embodiment, the MEMS microphone and the MEMS microphone that forming method is formed shown in Fig. 2 to Figure 12
Structure is identical, does not repeat herein.
To sum up, in MEMS microphone provided in this embodiment, described first, which shakes, has separator, the separator in film perforation
The piece film that shakes is protruded from towards the face of backplane film.When being formed by MEMS microphone during the work time, the piece film that shakes is in external force
When occuring bending and deformation under effect, the separator can play the role of shake described in isolation piece film and backplane film, so as to
The piece film that prevents from shaking is contacted with the backplane film, and then the piece film that can prevent from shaking mutually is adsorbed with the backplane film, influences MEMS wheats
The normal work of gram wind.In addition, shaking described first forms separator in film perforation, the separator can be made towards the backplane
The end face of film shake described in piece film surface distance it is smaller, shake between piece film and backplane film to be not easy to reduce the functional areas
The size in gap to the flexural deformation of piece film of shaking described in being not easy to influence, and then can ensure the performance for being formed by MEMS.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (20)
1. a kind of MEMS microphone, which is characterized in that including：
Backplane film, the backplane film include opposite the first face and the second face, and the backplane film includes functional areas and described in surrounding
The Support of functional areas；
The piece film that shakes on first face of backplane film, the functional areas, which shake in piece film, has first to shake film perforation, and described first
For the film perforation that shakes through the piece film that shakes, the functional areas, which shake, has gap between piece film and backplane film；
The separator to shake in film perforation positioned at described first, the separator protrude from the piece film that shakes towards the face of backplane film；
Support element between the backplane film and the piece film that shakes of the Support.
2. MEMS microphone as described in claim 1, which is characterized in that the material of the separator is silicon nitride or nitrogen oxidation
Silicon.
3. MEMS microphone as described in claim 1, which is characterized in that the functional areas first, which shake, also has second in piece film
Shake film perforation, and described second shakes film perforation through the piece film that shakes.
4. MEMS microphone as claimed in claim 3, which is characterized in that described first shake film perforation number be it is multiple, it is described
Second shake film perforation number be it is multiple, described second shake film perforation surround described first shake film perforation arrangement.
5. MEMS microphone as described in claim 1, which is characterized in that described first shakes film perforation for circular hole, and described first shakes
A diameter of 0.2 μm~10 μm of film perforation；Adjacent first spacing shaken between film perforation is 20 μm~100 μm.
6. MEMS microphone as described in claim 1, which is characterized in that have the back of the body in the second face of the functional areas backplane film
Chamber, it is described the back of the body bottom of chamber portion backplane film in have backplane hole, the backplane hole run through the backplane film.
7. MEMS microphone as described in claim 1, which is characterized in that the separator includes towards the end of the backplane film
Face, the end face shake described in piece film surface distance be 0.05 μm~0.5 μm.
8. a kind of forming method of MEMS microphone, which is characterized in that including：
Back pole plate is provided, the back pole plate includes opposite the first face and the second face, and the back pole plate includes functional areas and encirclement
The Support of the functional areas；
Supporting layer is formed on the first face of the back pole plate；
It being formed and is shaken piece film on the supporting layer, the functional areas, which shake in piece film and supporting layer, has first to shake film perforation, and described the
One film perforation that shakes shakes through the functional areas and piece film and extends in the supporting layer；
It shakes described first and forms separator in film perforation, the separator piece film that shakes described in extends in the supporting layer；
It is formed after the separator, reduction processing is carried out to second face of functional areas back pole plate, the back pole plate is made to be formed
Backplane film；
It is formed after backplane film, removes the supporting layer of the functional areas, formed between the Support backplane film and the piece film that shakes
Support element.
9. the forming method of MEMS microphone as claimed in claim 8, which is characterized in that the material of the separator is nitridation
Silicon or silicon oxynitride.
10. the forming method of MEMS microphone as claimed in claim 8, which is characterized in that the step of forming the separator
Including：It shakes described first and forms separation layer on film perforation bottom and side wall surface and the piece film that shakes；Shake piece film described in removal
Some or all of upper separation layer, forms separator.
11. the forming method of MEMS microphone as claimed in claim 10, which is characterized in that the portion to shake described in removal on piece film
Divide or the technique of whole separation layers includes dry etch process.
12. the forming method of MEMS microphone as claimed in claim 10, which is characterized in that the thickness of the separation layer is
0.05 μm~0.5 μm.
13. the forming method of MEMS microphone as claimed in claim 8, which is characterized in that the functional areas shake in piece film also
It shakes film perforation with second, described second shakes film perforation through the piece film that shakes.
14. the forming method of MEMS microphone as claimed in claim 13, which is characterized in that described second film perforation that shakes extends to
In the supporting layer；
Shake described in formation piece film the step of include：The piece film that initially shakes is formed on the supporting layer；To it is described it is initial shake piece film into
The first graphical treatment of row forms first for shaking piece film and shaking that piece film extends in the supporting layer described in and shakes film perforation and the
Two shake film perforation.
15. the forming method of MEMS microphone as claimed in claim 14, which is characterized in that piece film and the supporting layer of shaking
The step of carrying out the first graphical treatment include：Patterned mask layer is formed on the piece film that shakes；It is with the mask layer
Mask shakes piece film and supporting layer performs etching to described, forms described first film perforation and second that shakes and shakes film perforation.
16. the forming method of MEMS microphone as claimed in claim 13, which is characterized in that described first shakes film perforation and second
Shake film perforation number be it is multiple, described second shake film perforation surround described first shake film perforation arrangement.
17. the forming method of MEMS microphone as claimed in claim 8, which is characterized in that first shakes piece in the supporting layer
The depth in hole is 0.05 μm~0.5 μm.
18. the forming method of MEMS microphone as claimed in claim 8, which is characterized in that described first shake film perforation be circular hole,
Described first shakes a diameter of 0.2 μm~10 μm of film perforation；Described first spacing shaken between film perforation is 20 μm~100 μm.
19. the forming method of MEMS microphone as claimed in claim 8, which is characterized in that after reduction processing, further include：
Second graphical processing is carried out to the functional areas backplane film, forms backplane hole, the backplane in the functional areas backplane film
The backplane film is run through in hole.
20. the forming method of MEMS microphone as claimed in claim 8, which is characterized in that before the piece film that shakes described in formation, also
Including：Second graphical processing, the shape in first face of functional areas back pole plate are carried out to first face of functional areas back pole plate
At backplane hole；The reduction processing forms back of the body chamber in the second face of the functional areas backplane film, and the backplane hole is made to run through institute
State backplane film.
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