CN202488705U - MEMS (Micro-electromechanical Systems) silicon microphone utilizing eutectic bonding and SOI (Silicon On Insulator) silicon wafer - Google Patents
MEMS (Micro-electromechanical Systems) silicon microphone utilizing eutectic bonding and SOI (Silicon On Insulator) silicon wafer Download PDFInfo
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- CN202488705U CN202488705U CN2012200274173U CN201220027417U CN202488705U CN 202488705 U CN202488705 U CN 202488705U CN 2012200274173 U CN2012200274173 U CN 2012200274173U CN 201220027417 U CN201220027417 U CN 201220027417U CN 202488705 U CN202488705 U CN 202488705U
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Abstract
The utility model relates to an MEMS (Micro-electromechanical Systems) silicon microphone utilizing eutectic bonding and an SOI (Silicon On Insulator) silicon wafer, comprising a rear polar plate and a diaphragm body, wherein the rear polar plate and the diaphragm body are connected by eutectic bonding; the diaphragm body comprises an SOI silicon base; the SOI silicon base comprises a vibration thin film; the SOI silicon base is internally etched with a deep pit; the rear polar plate is internally provided with a separation groove penetrating through the rear polar plate to form a first polar plate region and a second polar plate region, which are separated from each other; the second polar plate region is internally provided with a plurality of sound holes passing through the second polar plate region; the sound holes are distributed corresponding to the deep pit below; the sound holes are arranged corresponding to the second polar plate region and an air gap is reserved between the surface of the region, which is close to the vibration thin film, and the vibration thin film; the first polar plate region is provided with a first metal welding disc; the surface of the second polar plate region, which is correspondingly far away from the vibration thin film, is provided with a second metal welding disc; and the rear polar plate corresponding to the second polar plate region is insulated from the vibration thin film through an insulting medium layer. The MEMS silicon microphone utilizing the eutectic bonding and the SOI silicon wafer is simple and compact in structure and convenient to prepare and improves the yield and the flexibility of a capacitance type silicon microphone.
Description
Technical field
The utility model relates to a kind of MEMS silicon microphone, and especially a kind of MEMS silicon microphone that adopts eutectic bonding and soi wafer belongs to the technical field of silicon microphone.
Background technology
Mike's wind energy is converted into the corresponding signal of telecommunication to people's voice signal, is widely used in mobile phone, computer, telephone set, camera and video camera etc.Traditional electret capacitor microphone adopts Teflon as vibration film, can not bear the high temperature at nearly 300 degree of printed circuit board (PCB) solder reflow process, thereby can only separate with the assembling of integrated circuit, and hand assembled has increased production cost greatly separately.
The development of nearly 30 years MEMS (Microelectromechanical Systems) technology and technology; Particularly based on the technological development of silicon MEMS; Realized the microminiaturized and low-cost of many transducers (like pressure sensor, accelerometer, gyroscope etc.).The MEMS silicon microphone has begun industrialization, in the application of high-end mobile phone, replaces traditional electret capacitor microphone gradually.
The MEMS microphone mainly still adopts capacitive principle, is made up of a vibration film and back pole plate, and one several microns spacing is arranged between vibration film and the back pole plate, forms capacitance structure.After high-sensitive vibration film is experienced outside audio frequency sound pressure signal, change the distance between vibration film and back pole plate, thereby form capacitance variations.Connect cmos amplifier behind the MEMS microphone and change into the variation of voltage signal to capacitance variations, become electricity output after amplifying again.
People's voice sound pressure signal is very faint, and vibration film must be very sensitive.Vibrating membrane adopts conventional semiconducter process-deposit to obtain usually, and material can adopt multiple or multilayer material obtains (such as DOPOS doped polycrystalline silicon, metal and silicon nitride composite membrane etc.).Because material coefficient of thermal expansion coefficient difference and high-temperature technology, the vibration film after the preparation has residual stress in various degree, has influenced the sensitivity of vibration film greatly.So, during as vibration film, after preparation, generally can adopt additional anneal technology with polysilicon, regulate residual stress and drop to minimum; If as vibration film, reduce residual stress through the ratio between conditioned reaction gas in the preparation with silicon nitride.But adopt this method little, and repeatability is bad, realizes also comparatively complicated the effect that reduces residual stress.In addition, also can adopt the mechanical structure that changes vibration film, change general plate vibration film into the line film, epistasis, or on vibration film, cut small groove, reduce the purpose that residual Ying Li ﹑ increases sensitivity thereby reach.But the method that changes the vibration film structure can cause complicated process of preparationization, increases cost, reduces yield.
Back pole plate also has the frequency band of control microphone except forming the electric capacity with vibration film, reduces functions such as acoustic noise.It need have certain rigidity, can be because of the vibration or the acoustic pressure deformation of outside.In addition, general design also need on back pole plate preparation hundreds of to thousands of diameters be several microns perforation, the frequency band that is used for regulating microphone with reduce acoustic noise.
Summary of the invention
The purpose of the utility model is to overcome the deficiency that exists in the prior art, and a kind of MEMS silicon microphone that adopts eutectic bonding and soi wafer is provided, and it is simple and compact for structure, and preparation is convenient, improves the yield and the sensitivity of capacitance silicon microphone.
According to the technical scheme that the utility model provides, the MEMS silicon microphone of said employing eutectic bonding and soi wafer comprises back pole plate and is positioned at the vibrating diaphragm body of said back pole plate below; Said back pole plate is connected through eutectic bonding with the vibrating diaphragm body; Said vibrating diaphragm body comprises that SOI is silica-based, the silica-based involving vibrations film of said SOI, and the center in said SOI is silica-based is etched with dell, and said dell extends to vibration film from the silica-based corresponding surface that forms the vibration film opposite side of SOI; Be provided with the separating tank that connects back pole plate in the said back pole plate, back pole plate forms first plate regions and second plate regions that is separated through separating tank; Be provided with the sound hole of some perforation second plate regions in said second plate regions, said hole and the corresponding distribution of the dell of below; The second plate regions correspondence is provided with between region surface and the vibration film of hole and contiguous vibration film has air gap; Said first plate regions is provided with first metal pad corresponding to the surface away from vibration film, said first metal pad and the first plate regions ohmic contact, and be electrically connected with vibration film; The second plate regions correspondence is provided with second metal pad away from the surface of vibration film, said second metal pad and the second plate regions ohmic contact, and the corresponding back pole plate of second plate regions is isolated through insulating medium layer and vibration film insulation.
The surface deposition of the corresponding adjacent back pole plate of said vibration film has second to be electrically connected metal, and said second is electrically connected metal and vibration film ohmic contact; The surface deposition of the corresponding contiguous vibration film of back pole plate has first to be electrically connected metal; Said first is electrically connected metal covers first plate regions, the corresponding surface of second plate regions simultaneously; First is electrically connected the metal and the first plate regions ohmic contact, and first is electrically connected metal through insulating medium layer and second plate regions insulation isolation; Back pole plate is electrically connected metal through first and the second electrical connection metal is connected with vibrating diaphragm body eutectic bonding.
The material of said back pole plate comprises silicon, and the silica-based corresponding below that forms vibration film of SOI is provided with oxygen buried layer and supporting layer, and said oxygen buried layer and vibration film are formed on the supporting layer respectively.
The aperture in said sound hole is 40 μ m ~ 100 μ m.The thickness of said back pole plate is 200 ~ 400 μ m, and the thickness of vibrating diaphragm body is 250 ~ 450 μ m.
The material that the said first electrical connection metal and second is electrically connected metal comprises Al-Ge, Au-Ge or Au.The degree of depth of said shallow hole is 2 ~ 4 μ m.
The material of said first metal pad and second metal pad comprises aluminium or gold.Said insulating medium layer and mask layer are silicon oxide layer.
The advantage of the utility model: back pole plate and vibrating diaphragm body form capacitive silicon microphone structure; Separating tank and some holes are set on the back pole plate; Through separating tank back pole plate is separated formation first plate regions and second plate regions; First metal pad on first plate regions is outwards drawn the signal of telecommunication of the vibration film on the vibrating diaphragm body after metal, second is electrically connected the metal corresponding matching through being electrically connected with first; Second metal pad on second plate regions can outwards be drawn back pole plate as the signal of telecommunication of another utmost point of electric capacity, is convenient to the encapsulation of following adopted flip chip bonding technology; The diameter in sound hole is designed to about 50 microns, uses two sides wet corrosion technique simultaneously, has practiced thrift process time and production cost, has reduced the physical dimension of microphone; Reduced the risk of the product failure that causes because of the location; Vibration film is taken on by the device layer of SOI, simplified manufacture craft and reduced vibration film stress, improved consistency of product and yield; Insulating medium layer has guaranteed the electric insulation at electric capacity the two poles of the earth behind the eutectic bonding; Manufacture craft is simple, highly sensitive, high conformity and to produce yield high, and this microphone can use flip chip bonding technology and ASIC to be packaged as a whole, and can use SMT technology to carry out follow-up printed circuit board (PCB) to mount, and is convenient and reliable.
Description of drawings
Fig. 1 is the three-dimensional structure sketch map of the utility model.
Fig. 2 is the corresponding vertical view of Fig. 1.
Fig. 3 is the structural representation of the utility model.
Fig. 4 ~ 14 are that the concrete processing step of the utility model is implemented cutaway view, wherein:
Fig. 4 is for obtaining the cutaway view behind the shallow hole on the utility model back pole plate.
Fig. 5 is for obtaining the cutaway view behind the insulating medium layer on the utility model back pole plate.
Fig. 6 obtains the cutaway view behind first contact hole and first location hole for the utility model etching.
Fig. 7 obtains the cutaway view behind second contact hole, the 3rd contact hole, second location hole and the 3rd location hole for the utility model etching.
Fig. 8 forms first cutaway view that be electrically connected behind metal and the metal pad layer for the utility model.
Fig. 9 obtains separating tank and the cutaway view of sound behind the hole for the utility model etching.
Figure 10 is the cutaway view behind the silica-based upward formation of the utility model SOI mask layer.
Figure 11 forms the cutaway view after the hole is distinguished for the utility model etching.
Figure 12 forms the cutaway view behind the dell for the utility model etching.
Figure 13 forms second cutaway view that be electrically connected behind the metal for the utility model.
Figure 14 passes through the cutaway view after eutectic bonding forms silicon microphone for the utility model.
Embodiment
Below in conjunction with concrete accompanying drawing and embodiment the utility model is described further.
Like Fig. 1 ~ shown in Figure 14: the utility model comprises back pole plate 1; Separating tank 2; Air gap 3; Insulating medium layer 4; First metal pad 5; Second metal pad 6; Sound hole 7; First is electrically connected metal 8; Second is electrically connected metal 9; Vibrating diaphragm body 10; Vibration film 11; Oxygen buried layer 12; Supporting layer 13; Dell 14; First plate regions 15; Second plate regions 16; First contact hole 17; First location hole 18; Second contact hole 19; Second location hole 20; The 3rd contact hole 21; Mask layer 22; Shallow hole 23; The 3rd location hole 24 and hole district 25.
Like Fig. 1, Fig. 2, Fig. 3 and shown in Figure 14: the MEMS silicon microphone of the utility model comprises back pole plate 1 and is positioned at the vibrating diaphragm body 10 of said back pole plate 1 below; Said back pole plate 1 and vibrating diaphragm body 10 are connected through eutectic bonding; Said vibrating diaphragm body 10 comprises that SOI is silica-based, the silica-based involving vibrations film 11 of said SOI, and the center in said SOI is silica-based is etched with dell 14, and said dell 14 extends to vibration film 11 from the silica-based corresponding surface that forms vibration film 11 opposite sides of SOI; Be provided with the separating tank 2 that connects back pole plate 1 in the said back pole plate 1, back pole plate 1 forms first plate regions 15 and second plate regions 16 that is separated through separating tank 2.
Be provided with the sound hole 7 of some perforation second plate regions 16 in said second plate regions 16, the dell 14 corresponding distributions of said sound hole 7 and below; Region surface and 11 of vibration films that second plate regions, 16 correspondences are provided with hole 7 and contiguous vibration film 11 have air gap 3; Said first plate regions 15 is provided with first metal pad 5 corresponding to the surface away from vibration film 11, said first metal pad 5 and first plate regions, 15 ohmic contact, and be electrically connected with vibration film 11; Second plate regions, 16 correspondences are provided with second metal pad 6 away from the surface of vibration film 11; Said second metal pad 6 and second plate regions, 16 ohmic contact, and second plate regions, 16 corresponding back pole plates 1 are isolated through insulating medium layer 4 and vibration film 11 insulation.
Particularly, the surface deposition of said vibration film 11 corresponding adjacent back pole plates 1 has second to be electrically connected metal 9, and said second is electrically connected metal 9 and vibration film 11 ohmic contact; The surface deposition of back pole plate 1 corresponding contiguous vibration film 11 has first to be electrically connected metal 8; Said first is electrically connected metal 8 covers first plate regions 15, the corresponding surface of second plate regions 16 simultaneously; First is electrically connected metal 8 and first plate regions, 15 ohmic contact, and first is electrically connected metal 8 through insulating medium layer 4 and the 16 insulation isolation of second plate regions; Back pole plate 1 is electrically connected metal 8 through first and the second electrical connection metal 9 is connected with vibrating diaphragm body 10 eutectic bondings.
First is electrically connected metal 8 is electrically connected with first metal pad 5 through first plate regions 15, thereby can make two capacitance electrodes of silicon microphone be positioned on the same plane; Be electrically connected with vibration film 11 through the second electrical connection metal 9 because first is electrically connected metal 8, thereby first metal pad 5 can be electrically connected with vibration film 11, thereby first metal pad 5 can be as the extraction electrode of vibrating diaphragm body 10; Second metal pad 6 is electrically connected with second plate regions 16, thereby second metal pad 6 is as the extraction electrode of back pole plate 1.First metal pad 5 can be connected with outside cmos circuit through lead-in wire bonding or flip chip bonding technology with second metal pad 6 again.The aperture in sound hole 7 is 40 μ m ~ 100 μ m; Generally the aperture with sound hole 7 is taken as 50 μ m; The material of back pole plate 1 is a silicon; The thickness of back pole plate 1 is 300 μ m, and the structure of size, quantity, position and the separating tank 2 in sound hole 7 can be set on demand, is as the criterion with lower acoustic noise can access required bandwidth.
Said vibrating diaphragm body 10 is processed by SOI (SOI is silica-based), and said SOI is silica-based to be comprised supporting layer 13, be positioned at the oxygen buried layer 12 on the supporting layer 13 and be positioned at the vibration film 11 on the said oxygen buried layer 12; Vibration film 11 is the silica-based device layer of SOI.Said vibration film 11 has conductivity preferably, as a utmost point of electric capacity.For forming the vibration film 11 of desired structure, to the silica-based etching of carrying out of SOI, etching obtains connecting the dell 14 of supporter 13 and oxygen buried layer 12.Wet etching silicon technology etching is adopted in the hole that connects supporter 13, and wet etching silicon nitride process etching is adopted in the hole that connects oxygen buried layer 12.Second is electrically connected metal 9 is electrically connected metal 8 and adopts the lift-off technologies formation with first, the first electrical connection metal 8 is electrically connected metal 9 and is the metal that can carry out eutectic bonding with second, and eutectic temperature is higher than 300 ℃, as: Al-Ge, Au-Ge, Au etc.
Shown in Fig. 4 ~ 14: the MEMS silicon microphone of said structure, can realize through following processing step:
A, back pole plate 1 is provided, and is etched with shallow hole 23 in the center of said back pole plate 1 one sides;
As shown in Figure 4: the material of said back pole plate 1 is a silicon, and back pole plate 1 has excellent conducting performance, and back pole plate 1 is as a utmost point of silicon microphone, and the thickness of back pole plate 1 is 300 μ m; Be etched in through RIE (reactive ion etching, Reactive Ion Etching) and obtain shallow hole 23 on the back pole plate 1, the degree of depth of said shallow hole 23 is 2.5 ~ 3 μ m, and the air gap 3 of 11 of back pole plate 1 and vibration films can be provided through shallow hole 23;
B, all form insulating medium layer 4, and said insulating medium layer 4 covers the corresponding surface of shallow holes 23 on above-mentioned back pole plate 1 corresponding surface;
As shown in Figure 5: said insulating medium layer 4 is a silicon dioxide; Said insulating medium layer 4 obtains through thermal oxidation; Insulating medium layer 4 covers on the back pole plate 1 corresponding surface; Simultaneously corresponding formation on shallow hole 23 surfaces also forms insulating medium layer 4, can make the isolated insulation of 11 of back pole plate 1 and vibration films through insulating medium layer 4; Simultaneously, insulating medium layer 4 can be as the mask layer in wet etching sound hole;
C, optionally shelter and the corresponding insulating medium layer 4 that forms shallow hole 23 1 side surfaces of etching back pole plate 1; Obtain the first required contact hole 17 and be positioned at first location hole 18 of shallow hole 23, said first contact hole 17 and first location hole 18 all extend to back pole plate 1 from the surface of insulating medium layer 4;
As shown in Figure 6: said first contact hole 17 and first location hole 18 all extend on the back pole plate 1 from insulating medium layer 4 surfaces, do not have the insulating medium layer 4 of etching still can be retained on the back pole plate 1 simultaneously; Win electrical connection metal 8 and back pole plate 1 ohmic contact be can make through first contact hole 17, formation sound hole 7 and separating tank 2 can be used in through first location hole 18; Said etching also is to adopt the RIE lithographic method;
D, optionally shelter and the corresponding insulating medium layer 4 that forms shallow hole 23 opposite sides surface of etching back pole plate 1; Obtain required second contact hole 19, second location hole 20, the 3rd location hole 24 and the 3rd contact hole 21; Said second contact hole 19, second location hole 20, the 3rd location hole 24 and the 3rd contact hole 21 all extend to back pole plate 1, the second contact hole 19 and the 17 corresponding distributions of first contact hole from the surface of insulating medium layer 4;
As shown in Figure 7: in order to make the win metal pad 5 and second metal pad 6 and back pole plate 1 ohmic contact; Adopt the RIE lithographic method; Optionally shelter and etching insulating medium layer 4; Can obtain simultaneously second contact hole 19, second location hole 20, the 3rd location hole 24 and the 3rd contact hole 21, the second contact holes 19 be positioned at first contact hole 17 directly over, second contact hole 19 and the 3rd contact hole 21 all are positioned at the outer ring of shallow hole 23; After forming second contact hole 19 and the 3rd contact hole 21, the metal pad material can be filled in second contact hole 19 and the 3rd contact hole 21; Second location hole 20 and the 3rd location hole 24 all be positioned at shallow hole 23 directly over, and corresponding with first location hole 18 in the shallow hole 23; Therefore, when using the silicon wet etching, the corresponding matching through first location hole 18, second location hole 20 and the 3rd location hole 24 can form required separating tank 2 and sound hole 7;
E, employing lift-off technology form the first required electrical connection metal 8 on the above-mentioned back pole plate 1 corresponding surface that forms shallow hole 23, and at opposite side surface formation metal pad layer; Said first is electrically connected metal level 8 is filled in first contact hole 17, and with back pole plate 1 ohmic contact; The metal pad layer is filled in second contact hole 19 and the 3rd contact hole 21, and with back pole plate 1 ohmic contact;
As shown in Figure 8: the metal material that vapor deposition or sputter are required; Pass through lift-off technology then; Can access first required electrical connection metal 8 and the metal pad layer; The first electrical connection metal 8 covers corresponding insulating medium layer 4 surfaces that form outside the shallow hole 23 of back pole plate 1 one ends, and is filled in first contact hole 17, thereby can form the ohmic contact of the first electrical connection metal 8 and back pole plate 1; The metal pad layer is filled in second contact hole 19 and the 3rd contact hole 21 respectively and is covered on the corresponding insulation dielectric layer 4; The material of metal pad layer is generally aluminium or gold, and the material of the first electrical connection metal 8 is for can form the required material of eutectic bonding; The thickness of metal pad layer is 1 ~ 2 μ m;
F, the above-mentioned back pole plate 1 of wet etching; Form the separating tank 2 that connects back pole plate 1 at above-mentioned second location hole 20 and first location hole, 18 corresponding region etchings; Make back pole plate 1 separate and form first plate regions 15 and second plate regions 16, and formation is positioned at first metal pad 5 on first plate regions 15 and is positioned at second metal pad 6 on second plate regions 16; And form some the holes 7 that connect back pole plate 1 with first location hole, 18 corresponding regional etchings at the 3rd location hole 24;
As shown in Figure 9: in order to form separating tank 2 and sound hole 7; Need be to back pole plate 1 two sides while wet etching; The solution of said wet etching be TMAH (tetramethylammonium hydroxide, Tetramethy lammonium Hydroxide, TMAH) or KOH (potassium hydroxide); When corrode simultaneously on the two sides, can reduce etching time, and can reduce the physical dimension of microphone, thereby can practice thrift cost; After wet etching obtains separating tank 2; Can make back pole plate 1 form first plate regions 15 and second plate regions 16; The metal pad layer separates formation first metal pad 5 and second metal pad 6; First metal pad 5 is positioned on first plate regions 15, and second metal pad 6 is positioned on second plate regions 16; Simultaneously, the sound hole 7 of formation is positioned at second plate regions 16, and when etching formed separating tank 2 and sound hole 7, corresponding insulation dielectric layer 4 was as the corrosion mask layer;
G, vibrating diaphragm body 10 is provided, said vibrating diaphragm body 10 comprises that SOI is silica-based, the silica-based involving vibrations film 11 of said SOI;
Said vibrating diaphragm body 10 adopts SOI silica-based, silica-based supporting layer 13, oxygen buried layer 12 and the vibration film 11 of comprising of SOI; After adopting SOI silica-based, form in dell 14 processes in etching, when adopting KOH solution wet etching, can erode to oxygen buried layer 12 and stop, being convenient to accurately control the degree of depth that etching obtains dell 14; Adopt the silica-based sensitivity that also can improve silicon microphone of SOI;
H, form mask layer 22 on the surface of the silica-based correspondence of above-mentioned SOI;
Shown in figure 10: said mask layer 22 is a silica, and mask layer 22 is through silica-based thermal oxidation obtains to SOI; The silica-based thickness of SOI is 350 μ m, and the thickness of vibration film 11 is 2 ~ 3 μ m;
I, optionally shelter and the said mask layer 22 of etching, and utilize the silica-based supporting layer 13 of the said SOI of wet etching, obtain the hole district 25 of required perforation supporting layer 13;
Shown in figure 11: as to utilize the RIE etching with silica-based corresponding mask layer 22 etchings that form vibration film 11 opposite sides surface of SOI, remove the mask layer 22 of center; Utilize the silica-based mask layer 22 of going up reservation of SOI as barrier bed, to the silica-based wet etching that carries out of SOI, the liquid of said wet etching is KOH; Behind the wet etching, can extend to oxygen buried layer 12 from the silica-based surface etch of SOI in Jiang Keng district 25; At this moment, during wet etching, be that supporting layer 13 is carried out the silicon wet etching; Said hole district 25 is corresponding with the dell that need obtain 14;
J, utilize the above-mentioned SOI of wet etching silica-based once more, remove above-mentioned mask layer 22 and SOI silica-based in corresponding oxygen buried layer 12, obtain and cheat district's 25 corresponding dells 14;
Shown in figure 12: as during wet etching, to be the etching that silica is carried out once more; After oxygen buried layer 12 carried out wet etching, can access required dell 14, dell 14 etches into till the vibration film 11; Because oxygen buried layer 12 is silica with mask layer 22, so the mask layer 22 of SOI silicon substrate surface can remove simultaneously, remove the mask layer 22 on vibration film 11 surfaces after, can vibration film 12 be drawn as another utmost point of electric capacity;
K, employing lift-off technology form required second on the surface of vibration film 11 and are electrically connected metal 9;
In order to realize eutectic bonding and vibration film 11 outwards drawn that form second through lift-off technology on vibration film 11 surfaces and be electrically connected metal 9, said second is electrically connected metal 9 and vibration film 11 ohmic contact; The second electrical connection metal 9 is electrically connected metal 8 with first makes back pole plate 1 to be integral with vibrating diaphragm body 10 eutectic bondings;
L, back pole plate 1 is electrically connected second on metal 8 and the vibration film 11 through first and is electrically connected metal 9 eutectic bondings, makes the required silicon microphones of formation after back pole plate 1 and the 10 corresponding connections of vibrating diaphragm body.
When practical operation; Back pole plate 1 is connected bonding with vibrating diaphragm body 10 for ease; In preparation technology; When forming separating tank 2, first plate regions 15 necessarily is connected with 16 maintenances of second plate regions, thereby win plate regions 15 and second plate regions 16 are connected as one through eutectic bonding and vibrating diaphragm body 10 simultaneously; When scribing; Again the corresponding part that connects first plate regions 15 and second plate regions 16 in the separating tank 2 is removed; Make back pole plate 1 form first plate regions 15 and second plate regions 16 that is separated from each other, guarantee two electrode partial actions as silicon microphone.
In order to form required silicon microphone, need back pole plate 1 and vibrating diaphragm body 10 be linked together; During connection, through reaching required being connected behind the first electrical connection metal 8 and the second electrical connection metal, 9 eutectic bondings; After the first electrical connection metal 8 is electrically connected metal 9 electrical connections with second simultaneously; Can reach being electrically connected of first metal pad 5 and vibration film 11; While second metal pad 6 and second plate regions, 16 ohmic contact; Second plate regions 16 is electrically connected metal 8, second through insulating medium layer 4 and is electrically connected metal 9 and vibration film 11 insulation isolation with first, therefore can form two electrodes of required silicon microphone at grade, can convenient be connected with outside cmos signal amplifying circuit.
Like Fig. 1 ~ shown in Figure 14: during use, first metal pad 5, second metal pad 6 are linked to each other with outside CMOS amplifying circuit through lead-in wire bonding or flip chip bonding technology.During work, silica-based 1 of vibration film 11 and back pole plate form capacitance structure; When the outside had sound from dell 14 entering, the sound of entering can produce active forces to vibration film 11, and the surface of vibration film 11 receives active force can produce corresponding deformation.When deformation took place vibration film 11, the capacitance structure of silica-based 1 formation of vibration film 11 and back pole plate also can take place change, can detect corresponding voice signal through external cmos signal amplifying circuit.
The utility model back pole plate 1 forms capacitive silicon microphone structure with vibrating diaphragm body 10; Separating tank 2 and some holes 7 are set on the back pole plate 1; Through separating tank 2 back pole plate 1 is separated formation first plate regions 15 and second plate regions 16; First metal pad 5 on first plate regions 15 is outwards drawn the signal of the vibration film on the vibrating diaphragm body 10 11 after metal 8, second is electrically connected metal 9 corresponding matching through being electrically connected with first; Second metal pad 6 on second plate regions 16 can extremely outwards be drawn back pole plate 1 as another of electric capacity, is convenient to the encapsulation of following adopted flip chip bonding technology; The diameter in sound hole 7 is designed to about 50 microns, uses two sides wet corrosion technique simultaneously, has practiced thrift process time and production cost, has reduced the physical dimension of microphone; Reduced the risk of the product failure that causes because of the location; Vibration film 11 is taken on by the device layer of SOI, simplified manufacture craft and reduced vibration film 11 stress, improved consistency of product and yield; Insulating medium layer 4 has guaranteed the electric insulation at electric capacity the two poles of the earth behind the eutectic bonding; Manufacture craft is simple, highly sensitive, high conformity and to produce yield high; This microphone can use flip chip bonding technology and ASIC to be packaged as a whole; And can use SMT (surface mounting technology, Surface Mounted Technology) technology to carry out follow-up printed circuit board (PCB) and mount, convenient and reliable.
Claims (5)
1. MEMS silicon microphone that adopts eutectic bonding and soi wafer comprises back pole plate (1) and is positioned at the vibrating diaphragm body (10) of said back pole plate (1) below; It is characterized in that: said back pole plate (1) is connected through eutectic bonding with vibrating diaphragm body (10); Said vibrating diaphragm body (10) comprises that SOI is silica-based; The silica-based involving vibrations film of said SOI (11); Center in said SOI is silica-based is etched with dell (14), and said dell (14) extends to vibration film (11) from the silica-based corresponding surface that forms vibration film (11) opposite side of SOI; Be provided with the separating tank (2) that connects back pole plate (1) in the said back pole plate (1), back pole plate (1) forms first plate regions (15) and second plate regions (16) that is separated through separating tank (2); Be provided with the sound hole (7) of some perforation second plate regions (16) in said second plate regions (16), the corresponding distribution of dell (14) of said sound hole (7) and below; Second plate regions (16) correspondence is provided with between region surface and the vibration film (11) of hole (7) and contiguous vibration film (11) has air gap (3); Said first plate regions (15) is provided with first metal pad (5) corresponding to the surface away from vibration film (11), said first metal pad (5) and first plate regions (15) ohmic contact, and be electrically connected with vibration film (11); The corresponding surface away from vibration film (11) of second plate regions (16) is provided with second metal pad (6); Said second metal pad (6) and second plate regions (16) ohmic contact, and the corresponding back pole plate (1) of second plate regions (16) is isolated through insulating medium layer (4) and vibration film (11) insulation.
2. the MEMS silicon microphone of employing eutectic bonding according to claim 1 and soi wafer; It is characterized in that: the surface deposition of the corresponding adjacent back pole plate of said vibration film (11) (1) has second to be electrically connected metal (9), and said second is electrically connected metal (9) and vibration film (11) ohmic contact; The surface deposition of the corresponding contiguous vibration film of back pole plate (1) (11) has first to be electrically connected metal (8); Said first is electrically connected metal (8) covers first plate regions (15), the corresponding surface of second plate regions (16) simultaneously; First is electrically connected metal (8) and first plate regions (15) ohmic contact, and the first electrical connection metal (8) is isolated through insulating medium layer (4) and second plate regions (16) insulation; Back pole plate (1) is electrically connected metal (8) through first and the second electrical connection metal (9) is connected with vibrating diaphragm body (10) eutectic bonding.
3. the MEMS silicon microphone of employing eutectic bonding according to claim 1 and soi wafer; It is characterized in that: the material of said back pole plate (1) comprises silicon; The silica-based corresponding below that forms vibration film (11) of SOI is provided with oxygen buried layer (12) and supporting layer (13), and said oxygen buried layer (12) is formed at respectively on the supporting layer (13) with vibration film (11).
4. the MEMS silicon microphone of employing eutectic bonding according to claim 1 and soi wafer is characterized in that: the aperture in said sound hole (7) is 40 μ m ~ 100 μ m.
5. the MEMS silicon microphone of employing eutectic bonding according to claim 1 and soi wafer is characterized in that: the thickness of said back pole plate (1) is 200 ~ 400 μ m, and the thickness of vibrating diaphragm body (10) is 250 ~ 450 μ m.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102611975A (en) * | 2012-01-20 | 2012-07-25 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
| CN105191350A (en) * | 2013-03-13 | 2015-12-23 | 欧姆龙株式会社 | Capacitance type sensor, acoustic sensor, and microphone |
| US11049788B2 (en) | 2019-10-18 | 2021-06-29 | Microsoft Technology Licensing, Llc | Integrated circuit chip device with thermal control |
-
2012
- 2012-01-20 CN CN2012200274173U patent/CN202488705U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102611975A (en) * | 2012-01-20 | 2012-07-25 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
| CN102611975B (en) * | 2012-01-20 | 2014-04-23 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
| CN105191350A (en) * | 2013-03-13 | 2015-12-23 | 欧姆龙株式会社 | Capacitance type sensor, acoustic sensor, and microphone |
| CN105191350B (en) * | 2013-03-13 | 2018-04-03 | 欧姆龙株式会社 | Electrostatic capacity sensor, sound transducer and microphone |
| US11049788B2 (en) | 2019-10-18 | 2021-06-29 | Microsoft Technology Licensing, Llc | Integrated circuit chip device with thermal control |
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