CN103607687A - MEMS microphone defect monitoring structure and manufacturing method thereof - Google Patents
MEMS microphone defect monitoring structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN103607687A CN103607687A CN201310630284.8A CN201310630284A CN103607687A CN 103607687 A CN103607687 A CN 103607687A CN 201310630284 A CN201310630284 A CN 201310630284A CN 103607687 A CN103607687 A CN 103607687A
- Authority
- CN
- China
- Prior art keywords
- layer
- concave configuration
- electrode layer
- medium layer
- mems microphone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
The invention discloses an MEMS microphone defect monitoring structure. The MEMS microphone defect monitoring structure comprises a lining with a cavity, a first medium layer, a lower electrode layer, a second medium layer, an upper electrode layer, an insulating layer, an air gap and release holes, wherein the first medium layer is provided with through holes communicated with the cavity, the lower electrode layer comprises a vibration film and a first leading-out portion connected with the vibration film, a body portion where a plurality of holes are formed is arranged on the insulating layer, the upper electrode layer comprises a second leading-out portion and a plurality of downward-concave structures, and the downward-concave structures are formed below the holes and not connected with one another, extend toward the vibration film and are provided hollow portions. The downward-concave structures and the body portion of the insulation layer form a back electrode structure, the cross section of each downward-concave structure is in a U shape, the bottom of each downward-concave structure is parallel to the vibration film, the bottoms of the downward-concave structures and the vibration film form a plurality of flat plate capacitors, the air gap is formed between the vibration film and the back electrode structure, and the release holes are formed in the back electrode structure and communicated with the air gap and the through holes. The deformation conditions of different areas of the vibration film in the vibration state can be conveniently measured through the MEMS microphone defect monitoring structure.
Description
Technical field
The present invention relates to technical field of microelectronic mechanical systems, particularly a kind of MEMS microphone defect monitoring structure and manufacture method thereof.
Background technology
MEMS microphone is one of the most successful MEMS product so far, it is by manufacturing the microphone of compatible Surface Machining or Bulk micro machining manufacture with integrated circuit, utilize the CMOS technology that continues micro, can do very littlely, can be widely applied in the portable equipments such as mobile phone, notebook computer, panel computer and video camera.
MEMS microphone has vibration film and the back electrode film of hanging structure, and whether crooked, to rate of finished products, control extremely important if how to realize this double-layer films of on-line monitoring.
Generally with white light interference or confocal laser, carry out at present the pattern test of film, but the method has certain limitation, be mainly reflected in: when film is larger, in the situation that guaranteeing resolution, its visual field is less, need to utilize splicing to form a complete sub-picture; In addition adopt white light interference or confocal laser can only test the pattern of topmost thin film, for the pattern to lower film is also tested, prior art is after graphical to the topmost thin film of whole silicon chip, the segment chip of choosing in whole silicon chip is removed its topmost thin film, thereby expose lower film, carries out on-line monitoring.Specifically, mask aligner by 4 times or 5 times projection multiplying powers dwindles 4～5 times of exposure field (shot) that are exposed to silicon chip by the figure in reticle, in an exposure field, there are several chips (die), therefore only need an exposure field to connect an exposure field and carry out multiexposure, multiple exposure, finally realize the photolithography patterning of whole silicon chip.
Yet the chip of having removed topmost thin film can only be for on-line monitoring, the microphone function of itself lost efficacy, and in each exposure field, had a chip losing efficacy like this, can cause undoubtedly cost to rise.
Summary of the invention
The object of the present invention is to provide a kind of MEMS microphone defect monitoring structure and manufacture method thereof, can carry out process monitoring to MEMS vibration membrane for microphone, accurately and easily the deformation of measuring vibrations film diverse location.
For reaching above-mentioned purpose, the invention provides a kind of defect monitoring structure of MEMS microphone, comprising: substrate, it has cavity; First medium layer, is formed at described substrate top surface, has the through hole communicating with described cavity; Lower electrode layer, involving vibrations film and the first lead division being attached thereto, described vibrating membrane is positioned at the top of described through hole; Second medium layer, is positioned at described vibrating membrane with first medium layer and the lower electrode layer top of exterior domain; Be positioned at successively upper electrode layer and insulating barrier on described second medium layer, described insulating barrier has main part, in described main part, form a plurality of perforates, described upper electrode layer comprises the second lead division and a plurality of concave configuration with hollow bulb of extending towards described vibrating membrane that form below described perforate, and the main part of described concave configuration and described insulating barrier forms back electrode structure; The cross section of wherein said concave configuration is concave shape, and its bottom is parallel with described vibrating membrane; Described a plurality of concave configuration is not connected mutually, and draws respectively by a plurality of described the second lead divisions; The bottom of described a plurality of concave configuration and described vibrating membrane form a plurality of capacity plate antennas; Air-gap, is formed between described vibrating membrane and described back electrode structure; And release aperture, be formed in described back electrode structure, be communicated with described air-gap.
Optionally, described release aperture is formed in the main part of described concave configuration and/or described insulating barrier.
Optionally, the material of described upper electrode layer and described lower electrode layer is the polysilicon of metal or doping.
Optionally, the material of described insulating barrier is silicon nitride, and the material of described first medium layer and second medium layer is silica.
Optionally, described defect monitoring structure is formed in the certain chip of whole silicon chip by using one times of reticle to expose, and the graphics chip of described one times of reticle is corresponding to the graphics chip of whole silicon chip.
The present invention also provides a kind of manufacture method of above-mentioned MEMS microphone defect monitoring structure, comprises the following steps: on substrate, form successively first medium layer, patterned lower electrode layer and second medium layer; The first lead division that described lower electrode layer defines vibrating membrane and is connected with described vibrating membrane; Described in etching, second medium layer to form a plurality of grooves in described second medium layer; On said structure, deposit upper electrode layer graphical, described upper electrode layer defines a plurality of one deck and the concave configuration with hollow bulb of horizontally outward extending from described trenched side-wall upper end and a plurality of second lead divisions of being connected corresponding to described a plurality of concave configuration of being deposited as in described groove; The cross section of described concave configuration is concave shape, and described a plurality of concave configuration is not connected mutually; Deposit the 3rd dielectric layer graphical, described the 3rd dielectric layer is only filled in the hollow bulb of described a plurality of concave configuration; On said structure, depositing insulating layer graphical, removes the described insulating barrier on described the 3rd dielectric layer, and described insulating barrier has the main part that surrounds described the 3rd dielectric layer; Etching is removed described the 3rd medium to form the perforate that exposes described a plurality of concave configuration in described insulating barrier main part; The main part of described insulating barrier and described a plurality of concave configuration form back electrode structure; In described back electrode structure, form the release aperture that a plurality of bottoms extend to described second medium layer; Formation runs through the cavity of described substrate, and described cavity top is positioned at described vibrating membrane with the below of inner region; And carry out release process by described cavity and described release aperture, remove described first medium layer and the second medium layer of described cavity top, the air-gap forming between described back electrode structure and described vibrating membrane, the bottom of described a plurality of concave configuration and described vibrating membrane form a plurality of capacity plate antennas.
Optionally, in described back electrode structure, forming the step that a plurality of bottoms extend to the release aperture of described second medium layer is: deposition upper electrode layer is also graphical, described upper electrode layer defines described a plurality of concave configuration and described a plurality of the second lead division, and at least part of described concave configuration, forms through hole and using as described release aperture; And/or in the main part of described insulating barrier, etch described release aperture.
Optionally, the material of described upper electrode layer and described lower electrode layer is the polysilicon of metal or doping.
Optionally, described insulating material is silicon nitride, and the material of described first medium layer is silica.
Optionally, described defect monitoring structure is formed in the certain chip of whole silicon chip, and the required a plurality of reticle of each step of carrying out described manufacture method are one times of reticle, and the graphics chip of described one times of reticle is corresponding to the graphics chip of whole silicon chip.
The invention has the advantages that by thering is a plurality of concave configuration of extending towards vibration membrane and the back electrode structure of insulating body portion, reduce the bottom of a plurality of concave configuration and thereby the distance of vibrating membrane forms a plurality of capacity plate antennas, when electrode vibration film bends deformation instantly, can be by the capacitance of each capacity plate antenna of test, assess the different distortion situation in each diverse location/region of vibrating membrane, compared to traditional optical monitoring method, the present invention adopts the not vibrated film size restrictions of electricity monitoring, more simple and convenient.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the MEMS microphone defect monitoring structure of one embodiment of the invention;
Fig. 2 is the vertical view of the back electrode structure of the MEMS microphone defect monitoring structure shown in Fig. 1;
Fig. 3 to Fig. 9 is the cutaway view of MEMS microphone defect monitoring structure manufacture method of the present invention;
Figure 10 is the schematic diagram for the manufacture of the reticle of MEMS microphone defect monitoring structure of the present invention.
Embodiment
For making content of the present invention more clear understandable, below in conjunction with Figure of description, content of the present invention is described further.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
First, the MEMS microphone defect monitoring structure of one embodiment of the invention is described.As shown in Figure 1, MEMS microphone defect monitoring structure comprises Semiconductor substrate 101, first medium layer 102, lower electrode layer 103, second medium layer 102 ', upper electrode layer and insulating barrier 105.Wherein, be formed with cavity 110 in substrate, its shape can be cylindrical or conical.First medium layer 102 is formed at Semiconductor substrate 101 upper surfaces, and it has the through hole being communicated with cavity 110.Lower electrode layer 103 is electric conducting material, and it comprises interconnective vibrating membrane 103a and the first lead division (not shown), and vibrating membrane 103a draws by the first lead division.Second medium layer 102 ' is formed on the lower electrode layer 103 and first medium layer 102 ' of vibrating membrane 103a with exterior domain.Upper electrode layer is electric conducting material, and it is positioned on second medium layer 102 '.Insulating barrier 105 is positioned on upper electrode layer, it comprises main part 105a, in main part 105a, be formed with a plurality of perforates, upper electrode layer forms a plurality of concave configuration with hollow bulb 104a 104 of extending towards vibrating membrane 103a below these perforates, and insulating barrier main part 105a and a plurality of concave configuration 104 form the back electrode structure of the present embodiment microphone monitor structure.As shown in Figure 1, concave configuration 104 is concave shape in the cross section perpendicular to substrate top surface direction, pitch smaller between its bottom and vibrating membrane 103 is also unsettled above vibrating membrane 103a abreast, and the part that horizontally outward extend its upper end is positioned at the insulating barrier below of perforate periphery.Between these concave configuration 104, be not connected mutually each other, and each concave configuration 104 is drawn by second lead division (referring to Fig. 2) of a upper electrode layer respectively.Thus, the bottom of these concave configuration 104 and vibrating membrane 103a have just formed a plurality of capacity plate antennas.
In addition, have a plurality of release aperture (Fig. 2 does not show) that form air-gap for carrying out release process in back electrode structure, these release aperture can be formed in concave configuration 104 or be formed in the main part 105a of insulating barrier.Insulating barrier also comprises support portion, and the upper electrode layer of support portion and support portion below can be supported on lower electrode layer 103 by second medium layer 102 ', back electrode structure is suspended on above vibrating membrane 103a and and vibrating membrane 103a between form air-gap 111.Vibrating membrane 103a is supported on substrate 101 by first medium layer.The material of lower electrode layer and upper electrode layer is such as the polysilicon that is the metals such as Al, W, Cu or doping.The material of first medium layer 102 and second medium layer 102 ' for example for the non-impurity-doped silica (USG) of the silica of hot oxide growth, plasma enhanced chemical vapor deposition (PECVD) method deposition, mix the silica (PSG) of phosphorus or be mixed with the silica (BPSG) of boron phosphorus.The material of insulating barrier 105 is for example silicon nitride or other insulating material.In the present embodiment, the main part 105a of vibrating membrane 103a and insulating barrier is shaped as circle, and the first lead division and the second lead division are elongated rectangular, forms and is electrically connected to external circuit.The formation method the present invention who is electrically connected to is not limited, the contact hole that for example extends to the first lead division and the second lead division by forming bottom when upper/lower electrode layer is metal is directly drawn, thereby form metal electrode liner in by contact hole when upper/lower electrode layer is the polysilicon of doping, forms the methods such as electrical connection and all can.
In sum, the present invention utilizes a plurality of concave configuration that disjunct cross section of extending to vibrating membrane is concave shape mutually of back electrode structure, make bottom and the vibrating membrane of a plurality of concave configuration form a plurality of capacity plate antennas, the flexural deformation situation of the change monitoring vibrating membrane regional of capacitance that thus can be by measuring each capacity plate antenna when the vibration.
Below in conjunction with specific embodiments the manufacture method of MEMS microphone defect monitoring structure of the present invention is described in detail.For technical scheme of the present invention is described better, please refer to Fig. 3 to figure be MEMS microphone structure manufacture method cutaway view of the present invention.
First, please refer to Fig. 3, in Semiconductor substrate 101, form successively first medium layer 102, patterned lower electrode layer 103 and second medium layer 102 '.Specifically, first deposit first medium layer 102.The material of substrate 101 can be silicon, germanium or germanium silicon.First medium layer 102 can be for the silica of hot oxide growth, the non-impurity-doped silica (USG) of plasma enhanced chemical vapor deposition (PECVD) method deposition, mix the silica (PSG) of phosphorus or be mixed with the silica (BPSG) of boron phosphorus.Then on first medium layer 102, deposit lower electrode layer 103 graphical to form connected vibrating membrane 103a and the first lead division.Vibrating membrane 103a is circular, and the first lead division can be elongated rectangle.Lower electrode layer material is electric conducting material, can be the polysilicon of the metals such as Al, W, Cu or doping.Afterwards, on patterned lower electrode layer 103 and first medium layer 102, deposit second medium layer 102 '.Second medium layer 102 ' is as the sacrificial layer material between MEMS microphone defect monitoring structure vibrating membrane and back electrode structure, and its thickness may be defined as the height of air-gap between the vibrating membrane of final defect monitoring structure and back electrode structure.Second medium layer 102 ' equally can be for the silica of hot oxide growth, the non-impurity-doped silica (USG) of plasma enhanced chemical vapor deposition (PECVD) method deposition, mix the silica (PSG) of phosphorus or be mixed with the silica (BPSG) of boron phosphorus.
Then, please refer to Fig. 4, etching second medium layer 102 ', to form a plurality of grooves.Groove is formed in second medium layer 102 ' and does not extend to lower electrode layer 103.
Then, as shown in Figure 5, deposition upper electrode layer is also graphical, this upper electrode layer is deposited as one deck and horizontally outward extends from groove 106 sidewall upper in aforesaid a plurality of grooves 106, form the concave configuration with hollow bulb 104a 104 of a plurality of concave shapes, between these concave configuration 104, be not connected mutually each other.Patterned upper electrode layer also defines a plurality of the second lead divisions, respectively at these concave configuration 104 are corresponding one by one, are connected and each concave configuration 104 is drawn.In addition, follow-up for carrying out the release aperture of release process in order to form, during graphical upper electrode layer, can define and the sizable through hole 107 that runs through upper electrode layer of release aperture simultaneously, this through hole (release aperture) 1007 bottoms extend to second medium layer 102 ', can in subsequent step, by this release aperture, carry out release process thus.
Afterwards, as shown in Figure 6, deposit the 3rd dielectric layer 102 ' ' and graphical, make the 3rd dielectric layer 102 ' ' be filled in the concave configuration 104 of concave shape.If it should be noted that, in abovementioned steps, formed through hole 107, the 3rd dielectric layer 102 ' ' to be filled in equally in this through hole 107 as release aperture.The 3rd dielectric layer 102 ' ' equally can be for the silica of hot oxide growth, the non-impurity-doped silica (USG) of plasma enhanced chemical vapor deposition (PECVD) method deposition, mix the silica (PSG) of phosphorus or be mixed with the silica (BPSG) of boron phosphorus.
Please continue to refer to Fig. 7, depositing insulating layer 106 graphical on said structure, is etched insulating barrier on the 3rd dielectric layer to remove and exposes the 3rd dielectric layer 102 ' '.In this etching process, the 3rd dielectric layer 102 ' ' also can be used as etching stop layer.Insulating barrier 105 can be divided into main part 105a and support portion, and main part 105a surrounds these concave configuration 104, and support portion is by upper electrode layer or itself be supported on second medium layer 102 '.The material of insulating barrier 105 can be silicon nitride or other insulating material, and the shape of main part 105a can be circular.
Then etching is removed the 3rd dielectric layer 102 ' exposing as shown in Figure 8 ', thereby in insulating barrier main part 105a, form a plurality of perforates 108 that expose concave configuration 104, the part that concave configuration 104 sidewall upper are horizontally outward extended is positioned at these perforate 108 periphery belows.Now, insulating barrier main part 105a and a plurality of concave configuration 105a form the back electrode structure of MEMS microphone defect monitoring structure.
In above-mentioned manufacturing step, can also in insulating barrier, form release aperture 107.Specifically, be in depositing insulating layer patterned step, the position etching at main part except the 3rd dielectric layer forms the release aperture 107 that bottom extends to second medium layer.
Please refer to again Fig. 9, the back side of substrate 101 is carried out graphically, to form the cavity 110 that runs through substrate.Specifically, first above said structure, apply one deck and be easy to the protective material of removing, the front protecting of completed structure is got up, in the region of the corresponding vibrating membrane in the back side of substrate 101, etch cavity 110 afterwards, remove afterwards protective material.Wherein the step of etching cavity comprises by substrate back upward; Apply overleaf photoresist and expose and develop; Use dark silicon etching equipment to carry out etching, the silicon of substrate exposure position is removed completely; Remove photoresist etc.Cavity 110 is cylindrical or conical cavity, and its top should be positioned at the below of inner side, vibrating membrane 103a region.Protective material can be photoresist or blue film (blue tape) etc.Before forming the step of cavity 110, also be included in the first lead division and the second lead division and form the step (not shown) being electrically connected to, the present invention is not limited the generation type being electrically connected on lead division, for example can extend to the contact hole of the first lead division and the second lead division by forming bottom, and expose the first lead division and the second lead division; Polysilicon or the metal for doping according to the material of upper/lower electrode layer forms electrode metal liner or directly using lead division as liner, draws on the first lead division and the second lead division afterwards, in order to form, is electrically connected to.
Finally, by release aperture 107 and cavity, with release process such as wet corrosion technique or gaseous corrosion techniques, discharge, respectively the second medium layer 102 ' of cavity top and first medium layer 102 are removed to the final MEMS microphone defect monitoring structure forming as shown in Figure 1.For the wet etching liquid discharging, be for example the mixed solution BOE of HF solution or hydrogen fluoride HF and ammonium fluoride NH4F.The second medium layer 102 ' of cavity top forms air-gap 111 after removing between vibrating membrane 103a and back electrode structure.The support section of insulating barrier with and the upper electrode layer of below by the second medium layer 102 ' of not removing, be supported on lower electrode layer 103,103 of lower electrode layers are supported on substrate by the first medium layer 102 of not removing.The bottom of a plurality of concave configuration 104 and vibrating membrane 103a form a plurality of capacity plate antennas, measure the capacitance of these capacity plate antennas by lead division, just can obtain the flexural deformation situation of vibrating membrane zones of different under vibrational state.
On the other hand, in the manufacture method of tradition monitoring structure, be that mask aligner by 4 times or 5 times projection multiplying powers dwindles 4～5 times of exposure field that are exposed to silicon chip by the figure in reticle, through multiexposure, multiple exposure, realize whole silicon chip photolithography patterning, can cause like this problem of the chip failing excessive cost rising that is used as monitoring structure in silicon chip.For this reason, the defect monitoring structure in the present invention is to be formed in the certain chip of whole silicon chip by using one times of reticle to expose.Specifically, in each step of monitoring structure manufacture method, all adopt the reticle of a times, the graphics chip of the corresponding whole silicon chip of graphics chip of reticle, its exposure range is corresponding whole silicon chip also, therefore by single exposure, just can complete the photolithography patterning of a manufacturing step of whole silicon chip.In the graphics chip of each reticle, can be made as corresponding to the certain chip position of silicon chip the figure of monitoring structure of the present invention, as shown in figure 10, at specific 5 chip positions of whole silicon chip for the manufacture of monitoring structure, the chip that only has thus these 5 positions is chip failing, has effectively avoided cost rising.
In sum, compared with prior art, MEMS microphone defect monitoring structure provided by the present invention can carry out by electrical method the process monitoring of vibrating membrane, only need just can assess by testing the capacitance of each capacity plate antenna the different distortion situation in each diverse location/region of vibrating membrane, the not vibrated film size restrictions of defect monitoring structure of the present invention, more simple and convenient.
Although the present invention discloses as above with preferred embodiment; so described many embodiment only give an example for convenience of explanation; not in order to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a defect monitoring structure for MEMS microphone, is characterized in that, comprising:
Substrate, it has cavity;
First medium layer, is formed at described substrate top surface, has the through hole communicating with described cavity;
Lower electrode layer, involving vibrations film and the first lead division being attached thereto, described vibrating membrane is positioned at the top of described through hole;
Second medium layer, is positioned at described vibrating membrane with first medium layer and the lower electrode layer top of exterior domain;
Be positioned at successively upper electrode layer and insulating barrier on described second medium layer, described insulating barrier has main part, in described main part, form a plurality of perforates, described upper electrode layer comprises the second lead division and a plurality of concave configuration with hollow bulb of extending towards described vibrating membrane that form below described perforate, and the main part of described concave configuration and described insulating barrier forms back electrode structure; The cross section of wherein said concave configuration is concave shape, and its bottom is parallel with described vibrating membrane; Described a plurality of concave configuration is not connected mutually, and draws respectively by a plurality of described the second lead divisions; The bottom of described a plurality of concave configuration and described vibrating membrane form a plurality of capacity plate antennas;
Air-gap, is formed between described vibrating membrane and described back electrode structure; And
Release aperture, is formed in described back electrode structure, is communicated with described air-gap.
2. the defect monitoring structure of MEMS microphone as claimed in claim 1, is characterized in that, described release aperture is formed in the main part of described concave configuration and/or described insulating barrier.
3. the defect monitoring structure of MEMS microphone as claimed in claim 1, is characterized in that, the material of described upper electrode layer and described lower electrode layer is the polysilicon of metal or doping.
4. the defect monitoring structure of MEMS microphone as claimed in claim 1, is characterized in that, the material of described insulating barrier is silicon nitride, and the material of described first medium layer and second medium layer is silica.
5. the defect monitoring structure of MEMS microphone as claimed in claim 1, it is characterized in that, described defect monitoring structure is formed in the certain chip of whole silicon chip by using one times of reticle to expose, and the graphics chip of described one times of reticle is corresponding to the graphics chip of whole silicon chip.
6. a manufacture method for the defect monitoring structure of MEMS microphone, is characterized in that, comprises the following steps:
On substrate, form successively first medium layer, patterned lower electrode layer and second medium layer; The first lead division that described lower electrode layer defines vibrating membrane and is connected with described vibrating membrane;
Described in etching, second medium layer to form a plurality of grooves in described second medium layer;
On said structure, deposit upper electrode layer graphical, described upper electrode layer defines a plurality of one deck and the concave configuration with hollow bulb of horizontally outward extending from described trenched side-wall upper end and a plurality of second lead divisions of being connected corresponding to described a plurality of concave configuration of being deposited as in described groove; The cross section of described concave configuration is concave shape, and described a plurality of concave configuration is not connected mutually;
Deposit the 3rd dielectric layer graphical, described the 3rd dielectric layer is only filled in the hollow bulb of described a plurality of concave configuration;
On said structure, depositing insulating layer graphical, removes the described insulating barrier on described the 3rd dielectric layer, and described insulating barrier has the main part that surrounds described the 3rd dielectric layer;
Etching is removed described the 3rd medium to form the perforate that exposes described a plurality of concave configuration in described insulating barrier main part; The main part of described insulating barrier and described a plurality of concave configuration form back electrode structure;
In described back electrode structure, form the release aperture that a plurality of bottoms extend to described second medium layer;
Formation runs through the cavity of described substrate, and described cavity top is positioned at described vibrating membrane with the below of inner region; And
By described cavity and described release aperture, carry out release process, remove described first medium layer and the second medium layer of described cavity top, the air-gap forming between described back electrode structure and described vibrating membrane, the bottom of described a plurality of concave configuration and described vibrating membrane form a plurality of capacity plate antennas.
7. the manufacture method of the defect monitoring structure of MEMS microphone as claimed in claim 6, is characterized in that, forms the step that a plurality of bottoms extend to the release aperture of described second medium layer to be in described back electrode structure:
Deposition upper electrode layer is also graphical, and described upper electrode layer defines described a plurality of concave configuration and described a plurality of the second lead division, and at least part of described concave configuration, forms through hole and using as described release aperture; And/or
In the main part of described insulating barrier, etch described release aperture.
8. the manufacture method of the defect monitoring structure of MEMS microphone as claimed in claim 6, is characterized in that, the material of described upper electrode layer and described lower electrode layer is the polysilicon of metal or doping.
9. the manufacture method of the defect monitoring structure of MEMS microphone as claimed in claim 6, is characterized in that, described insulating material is silicon nitride, and the material of described first medium layer is silica.
10. the manufacture method of the defect monitoring structure of MEMS microphone as claimed in claim 6, it is characterized in that, described defect monitoring structure is formed in the certain chip of whole silicon chip, carry out a plurality of reticle that each step of described manufacture method adopts and be one times of reticle, the graphics chip of described one times of reticle is corresponding to the graphics chip of whole silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310630284.8A CN103607687B (en) | 2013-11-29 | 2013-11-29 | A kind of MEMS microphone defect monitoring structure and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310630284.8A CN103607687B (en) | 2013-11-29 | 2013-11-29 | A kind of MEMS microphone defect monitoring structure and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103607687A true CN103607687A (en) | 2014-02-26 |
| CN103607687B CN103607687B (en) | 2018-10-16 |
Family
ID=50125883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310630284.8A Active CN103607687B (en) | 2013-11-29 | 2013-11-29 | A kind of MEMS microphone defect monitoring structure and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103607687B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104507014A (en) * | 2014-12-26 | 2015-04-08 | 上海集成电路研发中心有限公司 | MEMS microphone with fold-type vibrating film and manufacturing method of microphone |
| CN105502277A (en) * | 2014-09-24 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Micro electro mechanical system (MEMS) microphone, manufacturing method thereof and electronic device |
| CN108100988A (en) * | 2017-12-19 | 2018-06-01 | 苏州工业园区纳米产业技术研究院有限公司 | Silicon chip carries on the back chamber lithographic method and silicon wafer devices |
| CN108383076A (en) * | 2017-02-03 | 2018-08-10 | 英飞凌科技股份有限公司 | Film structural component and the method for being used to form film structural component |
| CN111918192A (en) * | 2020-08-19 | 2020-11-10 | 杭州士兰微电子股份有限公司 | MEMS microphone |
| CN117376796A (en) * | 2023-12-08 | 2024-01-09 | 瑞声光电科技(常州)有限公司 | Method for preparing micro electromechanical microphone |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1795699A (en) * | 2003-05-27 | 2006-06-28 | 星电株式会社 | Sound detection mechanism |
| EP1722595A1 (en) * | 2004-03-05 | 2006-11-15 | Matsushita Electric Industrial Co., Ltd. | Electret condenser |
| CN101094540A (en) * | 2006-06-20 | 2007-12-26 | 财团法人工业技术研究院 | Miniature acoustic transducer |
| CN101389155A (en) * | 2007-09-12 | 2009-03-18 | 美律实业股份有限公司 | Silicon wafer capacitor microphone |
| CN103139691A (en) * | 2013-02-22 | 2013-06-05 | 上海微联传感科技有限公司 | Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof |
| CN103402163A (en) * | 2013-07-26 | 2013-11-20 | 歌尔声学股份有限公司 | Shock-resistant silicon-based micro-electro mechanical system (MEMS) microphone and manufacturing method thereof |
-
2013
- 2013-11-29 CN CN201310630284.8A patent/CN103607687B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1795699A (en) * | 2003-05-27 | 2006-06-28 | 星电株式会社 | Sound detection mechanism |
| EP1722595A1 (en) * | 2004-03-05 | 2006-11-15 | Matsushita Electric Industrial Co., Ltd. | Electret condenser |
| CN101094540A (en) * | 2006-06-20 | 2007-12-26 | 财团法人工业技术研究院 | Miniature acoustic transducer |
| CN101389155A (en) * | 2007-09-12 | 2009-03-18 | 美律实业股份有限公司 | Silicon wafer capacitor microphone |
| CN103139691A (en) * | 2013-02-22 | 2013-06-05 | 上海微联传感科技有限公司 | Micro-electromechanical system (MEMS) silicon microphone utilizing multi-hole signal operation instruction (SOI) silicon bonding and manufacturing method thereof |
| CN103402163A (en) * | 2013-07-26 | 2013-11-20 | 歌尔声学股份有限公司 | Shock-resistant silicon-based micro-electro mechanical system (MEMS) microphone and manufacturing method thereof |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105502277A (en) * | 2014-09-24 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | Micro electro mechanical system (MEMS) microphone, manufacturing method thereof and electronic device |
| CN104507014A (en) * | 2014-12-26 | 2015-04-08 | 上海集成电路研发中心有限公司 | MEMS microphone with fold-type vibrating film and manufacturing method of microphone |
| CN104507014B (en) * | 2014-12-26 | 2018-08-28 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone and its manufacturing method with fold-type vibrating membrane |
| CN108383076A (en) * | 2017-02-03 | 2018-08-10 | 英飞凌科技股份有限公司 | Film structural component and the method for being used to form film structural component |
| CN108100988A (en) * | 2017-12-19 | 2018-06-01 | 苏州工业园区纳米产业技术研究院有限公司 | Silicon chip carries on the back chamber lithographic method and silicon wafer devices |
| CN111918192A (en) * | 2020-08-19 | 2020-11-10 | 杭州士兰微电子股份有限公司 | MEMS microphone |
| CN117376796A (en) * | 2023-12-08 | 2024-01-09 | 瑞声光电科技(常州)有限公司 | Method for preparing micro electromechanical microphone |
| CN117376796B (en) * | 2023-12-08 | 2024-02-06 | 瑞声光电科技(常州)有限公司 | Method for preparing micro electromechanical microphone |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103607687B (en) | 2018-10-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104507014B (en) | A kind of MEMS microphone and its manufacturing method with fold-type vibrating membrane | |
| US9681234B2 (en) | MEMS microphone structure and method of manufacturing the same | |
| CN103607687A (en) | MEMS microphone defect monitoring structure and manufacturing method thereof | |
| KR101528398B1 (en) | Mems device and method of making a mems device | |
| US10065852B2 (en) | MEMS device and manufacturing method thereof | |
| CN103281661A (en) | MEMS (micro electro mechanical system) microphone structure and manufacturing method of MEMS microphone structure | |
| US8587078B2 (en) | Integrated circuit and fabricating method thereof | |
| KR20140092769A (en) | Comb mems device and method of making a comb mems device | |
| US8252695B2 (en) | Method for manufacturing a micro-electromechanical structure | |
| JP6235023B2 (en) | Silicon etching method | |
| CN105502277A (en) | Micro electro mechanical system (MEMS) microphone, manufacturing method thereof and electronic device | |
| CN103402164A (en) | MEMS (micro-electromechanical system) microphone structure and manufacturing method thereof | |
| US7960805B2 (en) | MEMS structure with suspended microstructure that includes dielectric layer sandwiched by plural metal layers and the dielectric layer having an edge surrounded by peripheral metal wall | |
| CN111517272B (en) | Method for producing electrode | |
| US8640543B2 (en) | Micro-electro-mechanical system device, out-of-plane sensor and method for making micro-electro-mechanical system device | |
| JP2010074523A (en) | Method of etching sacrificial layer, method of manufacturing mems device, and mems device | |
| JP6151541B2 (en) | MEMS device and manufacturing method thereof | |
| KR20120004212A (en) | Method for fabricating capacitor | |
| CN104003350B (en) | A kind of wafer-grade vacuum encapsulation method of body silicon resonance type pressure transducer | |
| JP6041033B2 (en) | Manufacturing method of semiconductor substrate | |
| US9349644B2 (en) | Semiconductor device producing method | |
| CN114640933B (en) | MEMS microphone and preparation method thereof | |
| CN110121138B (en) | MEMS microphone with high sensitivity and high signal-to-noise ratio and manufacturing method thereof | |
| US8117919B2 (en) | Micro-electro-mechanical system device | |
| CN104743495B (en) | Test structure used for testing etching process and formation method and testing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |