CN108383076A

CN108383076A - Film structural component and the method for being used to form film structural component

Info

Publication number: CN108383076A
Application number: CN201810105212.4A
Authority: CN
Inventors: A·德厄
Original assignee: Infineon Technologies AG
Current assignee: Infineon Technologies AG
Priority date: 2017-02-03
Filing date: 2018-02-02
Publication date: 2018-08-10
Anticipated expiration: 2038-02-02
Also published as: DE102017102190A1; US10927002B2; DE102017102190B4; US20190256351A1; US10336607B2; CN108383076B; US20180222749A1

Abstract

Film structural component includes the membrane structure for having conductive film layer.Conductive film layer has suspension region and diaphragm area.In addition, the suspension region arrangement of conductive film layer is on the insulating layer.In addition, insulating layer is arranged on bearing substrate.In addition, film structural component includes to electrode structure.There is cavity vertically arranged between electrode structure and the diaphragm area of conductive film layer.In addition, the edge of the conductive film layer using the conductive film layer and the vertical range between electrode structure more than half as the laterally projecting edge more than the insulating layer of amplitude.In addition, the conductive film layer absorbs in the diaphragm area offset of the conductive film layer and is applied to 90% or more power in the membrane structure.

Description

Film structural component and the method for being used to form film structural component

Technical field

Example is related to the manufacturing technology for film structural component, the method for relating more specifically to film structural component and forming film structural component.

Background technology

Manufacture film structural component (such as microphone, pressure sensor or acceleration transducer) generally includes multiple with high costs Processing step.It can be desirable to providing the low-cost film structural component with the long-life.

Invention content

Film structural component with longer service life and/or improved electrical characteristics may need the lower scheme of cost.

Theme that can be through the invention covers the demand.

Some examples are related to film structural component.Film structural component includes the membrane structure for having conductive film layer.Conductive film layer has suspension area Domain and diaphragm area.In addition, the suspension region arrangement of conductive film layer is on the insulating layer.In addition, insulating layer is arranged on bearing substrate. In addition, film structural component includes to electrode structure.There is cavity vertically arranged between electrode structure and the diaphragm area of conductive film layer. In addition, the edge of conductive film layer is laterally prominent by amplitude of more than half of conductive film layer and the vertical range between electrode structure It is more than the edge of insulating layer to go out.In addition, conductive film layer is absorbed in the diaphragm area offset of conductive film layer and is applied in membrane structure 90% or more power.

Some examples are related to film structural component.Film structural component includes the membrane structure for having conductive film layer.Conductive film layer has suspension area Domain and diaphragm area.In addition, the suspension region arrangement of conductive film layer is on the insulating layer.In addition, insulating layer is arranged on bearing substrate. In addition, film structural component includes to electrode structure.Include gap to electrode structure.In addition, in the conductive counter-electrode layer to electrode structure It is vertically arranged between the diaphragm area of conductive film layer to have cavity.In addition, film structural component includes the insulation system to electrode structure.Absolutely The first part of edge structure is arranged at least part to the wall portion in the gap of electrode structure.In addition, the of insulation system Two parts extend vertically up in cavity.

Some examples are related to film structural component.Film structural component includes the membrane structure for having conductive film layer.Conductive film layer is led including first Electric material.In addition, conductive film layer has suspension region and diaphragm area.In addition, the suspension region of conductive film layer is arranged in insulating layer On.In addition, insulating layer is arranged on bearing substrate.Film structural component further include have conductive counter-electrode layer to electrode structure.It is conductive Include the second conductive material to electrode layer.In addition, having vertically arranged between electrode structure and the diaphragm area of conductive film layer Cavity.In addition, the first conductive material is different from the second conductive material.

Some examples are related to being used to form the method for film structural component.This method includes forming the conduction of membrane structure on the insulating layer Film layer.Conductive film layer has suspension region and diaphragm area.In addition, insulating layer is arranged on bearing substrate.In addition, this method includes At least laterally formed to electrode structure in the region of conductive film layer.The method further includes：To electrode structure and conduction Vertically arranged cavity is formed between the diaphragm area of film layer, to which cavity is extended vertically from the conductive counter-electrode layer to electrode structure To the diaphragm area of conductive film layer.The edge of conductive film layer with the half of conductive film layer and the vertical range between electrode structure with Upper is the laterally projecting edge more than insulating layer of amplitude.

Description of the drawings

Embodiment is illustrated in further detail below with regard to appended attached drawing.Diagram：

Fig. 1 is the schematic cross-sectional of film structural component；

Fig. 2 is the schematic cross-sectional of other film structural component；

Fig. 3 is the schematic cross-sectional of other film structural component；

Fig. 4 is the schematic cross-sectional of other film structural component；

Fig. 5 is the flow chart for the method for being used to form other film structural component；

Fig. 6 a-6h are the exemplary process steps for being used to form other film structural component；

Fig. 7 a-7h are the exemplary process steps for being used to form other film structural component；

Fig. 8 is the schematic cross-sectional of other film structural component；

Fig. 9 a-9h are the exemplary process steps for being used to form other film structural component；And

Figure 10 is the schematic cross-sectional of other film structural component.

Specific implementation mode

Various embodiments are more fully described referring now to attached drawing, some embodiments are shown in the accompanying drawings.It is in the figure For the sake of clear, thickness of line, layer, and or area size may be shown by exaggeration.

In only showing being described below of the attached drawing of some exemplary embodiments, identical reference numeral may refer to identical Or similar component.In addition, recapitulative reference numeral can be used for repeatedly occurring in one embodiment or in the accompanying drawings but It is the component and object being collectively described about one or more features.As long as unobvious or impliedly being obtained from specification Other aspects, then component or object with identical either recapitulative reference numeral described in can individually, some Or it still may also differently be designed in the same manner in terms of all features (such as its size).

Although embodiment can be modified and be changed in various ways, embodiment is used as example quilt in the accompanying drawings It shows and will be described in detail herein.However it is clear that, it is not intended to it limits implementations to corresponding disclosed Form, but embodiment cover in fact it is the repertoire being located within the scope of the present invention and/or structure retrofit, equivalence side Case and alternative.Identical reference numeral refers to same or analogous element in entire description of the drawings.

It is noted that being referred to as and another element " connection " or the element of " coupling " can be directly connected to another element or coupling It closes, or can have therebetween element.When two elements A and B are combined by "or", then they are understood to imply All possible combination, such as " only A ", " only B " and " A and B ".Alternative statement for same combination is " in A and B It is at least one ".Same situation is suitable for the combination of 2 or more elements.

Term used herein is only used for description specific embodiment, without limiting embodiment.As used herein, as long as up and down Text is not otherwise noted clearly, and otherwise singulative "an", "one" and " described, should " also include plural form.In addition, answering It should be appreciated that expression is such as " by comprising " as used herein, "comprising", " having " and/or " having " illustrate exist Feature, integer, step, the course of work, the element and/or component being previously mentioned, but do not preclude the presence or addition of one in other words One or more features, integer, step, the course of work, element, component and/or a combination thereof.

As long as no other definition, then all terms (including technical terms and scientific terms) used herein have and this The identical meaning that the those of ordinary skill of field that the present invention belongs to is usually assigned.As long as further, it is understood that not having herein There are clearly in addition restriction, expression (such as those be defined in common dictionary expression) to be interpreted as having with it in phase The consistent meaning of meaning in the context of pass technology.

Fig. 1 shows the schematic cross-sectional of film structural component 100.Film structural component 100 includes the membrane structure for having conductive film layer 111 110.In addition, conductive film layer 111 has suspension region 112 and diaphragm area 113.In addition, the suspension region 112 of conductive film layer 111 It is arranged on (first) insulating layer 120.In addition, (first) insulating layer 120 is arranged on bearing substrate 130.Film structural component 100 also wraps It includes to electrode structure 140.In addition, vertically arranged between the diaphragm area 113 to electrode structure 140 and conductive film layer 111 have Cavity 150.In addition, (transverse direction) edge 114 of conductive film layer 111 is in conductive film layer 111 and hanging down between electrode structure 140 Directly (or more than 75%, it is more than 90% apart from more than half or more than 100%) being amplitude, laterally projecting is more than (first) insulating layer 120 (transverse direction) edge 121.In addition, the conductive film layer 111 is absorbed when the diaphragm area 113 of the conductive film layer 111 deviates And it is applied to the power for being more than for 90% (being either more than 95% or more than 99%) in the membrane structure 110.

It is applied to the film knot since conductive film layer 111 is absorbed when the diaphragm area 113 of the conductive film layer 111 deviates It is more than 90% power on structure 110, therefore the other layer for enhancing membrane structure 110 can be saved.Thereby, it is possible at low cost Film structural component 100 is provided honest and cleanly.Further, since (transverse direction) edge 114 of conductive film layer 111 is in conductive film layer 111 and to electrode Vertical range between structure 140 more than half be laterally projecting (transverse direction) edge more than (first) insulating layer 120 of amplitude 121, therefore the electrolysis coupling (for example, parasitic capacitance can be reduced) of conductive film layer 111 and bearing substrate 130 can be optimized.As a result, When determining the capacitance of the capacitor formed by membrane structure 110 and to electrode structure 140 (for example, being examined by means of film structural component 100 When measuring sound wave), signal-to-noise ratio can be improved.Thus the film structural component 100 has improved electrical characteristics.In addition, due to conductive film Layer 111 (transverse direction) edge 114 using the vertical range in conductive film layer 111 and between electrode structure 140 more than half as width Laterally projecting (transverse direction) edge 121 more than (first) insulating layer 120 is spent, therefore causes described lead when diaphragm area 113 deviates The region (such as in the opposite direction) for protruding past described (transverse direction) edge 121 of electrolemma layer 111 deviates.As a result, in film area When domain 113 deviates, reduces the voltage of conductive film layer 111, especially reduce the voltage in suspending region 112.Thus, it is possible to carry The service life of highly conductive film layer 111, and thus improve the service life of film structural component 100.

Such as conductive film layer 111 can have outburst area or protruding portion, laterally projecting outburst area is more than insulating layer 120 (transverse direction) edge 121.Outburst area can have lateral dimension (for example, in 114 He of (transverse direction) edge of conductive film layer 111 Between (transverse direction) edge 121 of insulating layer 120), which is more than conductive film layer 111 and between electrode structure 140 The half of vertical range (or more than 75%, is more than 90% or more than 100%).For example, conductive film layer 111 can be absorbed described The diaphragm area 113 of conductive film layer 111 appears in being more than 90% and (either more than 95% or be more than in membrane structure 110 when deviating 99%) power.Conductive film layer 111 can be for example (such as p doping or n adulterate) polysilicon layer or (such as p adulterate or n mix Miscellaneous) amorphous polysilicon layer.For example, the lateral dimension (for example, width) of conductive film layer 111 can be to electrode structure 140 110% or more (or 125% or more or 150% or more) of lateral dimension (for example, width).The lateral ruler of conductive film layer 111 It is very little can be greater than 1 μm (or be more than 10 μm, be more than 50 μm, be more than 100 μm or be more than 250 μm), and less than 1000 μm (or Less than 750 μm, it is less than 500 μm, or be less than 400 μm).The vertical dimension (for example, thickness) of conductive film layer 111 can be, for example, (the first) 25% or more (either 50% or more or 75% or more) of the vertical dimension (for example, thickness) of insulating layer 120, and/ Or the vertical dimension (for example, thickness) to electrode structure 140 5% or more (or 10% or more, 20% or more or 30% with On).For example, the vertical dimension of conductive film layer 111 can be more than 50nm (or be more than 100nm, be more than 200nm, be more than 300nm, or More than 330nm) and less than 1 μm (be either less than 750nm and be either less than 500nm less than 400nm or less than 350nm).It leads The suspension region 112 of electrolemma layer 111 may, for example, be such region of conductive film layer 111：The region is laterally fully located at ( One) in the region of insulating layer 120.For example, the diaphragm area 113 of conductive film layer 111 is such region of conductive film layer 111：It should Region is laterally fully located at outside the region of (first) insulating layer 120.

For example, conductive film layer 111 and the vertical range between electrode structure 140 can be：Diaphragm area 113 not by Conductive film layer 111 in the state of load or when diaphragm area 113 does not deviate and the vertical range between electrode structure 140. In the state of diaphragm area 113 not being loaded, for example, diaphragm area 113 can be big towards the pressure on the surface of cavity 150 Pressure on the small surface departing from cavity 150 equal to diaphragm area 113.For example, conductive film layer 111 and to electrode structure 140 Between vertical range can be to 50% or more of the vertical dimension of electrode structure 140 (or 75% or more, 100% or more, 125% or more or 150% or more).

For example, may include conductive counter-electrode layer to electrode structure 140.For example, conductive counter-electrode layer can be (for example, p What doping or n were adulterated) polysilicon layer, (for example, what p doping or n were adulterated) amorphous polysilicon layer, metal layer (such as aluminium layer, layers of copper Or layer gold) or alloy-layer (for example, aluminum bronze layer).1 can be greater than to the lateral dimension (for example, width) of electrode structure 140 μm (or be more than 10 μm, be more than 50 μm, be more than 100 μm or be more than 250 μm), and less than 1000 μm (or be less than 750 μm, be less than 500 μm, or it is less than 400 μm).For example, to the vertical dimension of electrode structure 140 can be more than 500nm (or be more than 750nm, be more than 1 μm or be more than 1.5 μm), and less than 10 μm (or be less than 5 μm, be less than 4 μm, be less than 3 μm, or be less than 2 μm).

For example, (first) insulating layer 120 can be silica (SiO₂) layer or silicon nitride (Si₃N₄) layer.(the first) insulating layer 120 can be the insulating layer of such as structuring.For example, (first) insulating layer can be arranged in the surface 131 of bearing substrate 130 On.

For example, may include the gap for having insulation system to electrode structure 140.In addition, insulation system is at least one (the first) it is partially disposed at least part of the wall portion in the gap to electrode structure 140.For example, insulation system may include Silicon oxide or silicon nitride.For example, the cross section of insulation system can have ellipse, round or rectangle.Insulation system can example Such as shape with sleeve shaped or closed tube.For example, the cross section in gap can have round, ellipse or flute profile.For example, empty Gap can be the opening to electrode structure 140.For example, the lateral dimension in gap can be more than 200nm (or more than 500nm, greatly In 1 μm, or it is more than 5 μm).For example, the lateral dimension of insulation system can be more than 100nm (or more than 200nm, more than 500nm Or it is more than 1 μm).

For example, the material of the material of insulation system and (first) insulating layer 120 can be different.For example, insulation system can be with Including silicon nitride, and (first) insulating layer 120 may include silica, and vice versa.

For example, the lateral dimension (for example, width) of insulation system can be equivalent to the transverse direction in the gap to electrode structure 140 Size (for example, width).First part to electrode structure 140 and can be effective to the second part of electrode structure 140 as a result, Ground is mechanically connected to each other and at the same time being electrically insulated from each other.

Such as the second part of insulation system can extend vertically up to cavity from the conductive counter-electrode layer to electrode structure 140 In 150.It is possible thereby to limit the diaphragm area 113 of conductive film layer 111 towards the side to electrode structure 140 by means of insulation system To offset.Thus, it is possible to which the diaphragm area 113 in the sharp deflections of diaphragm area 113 is avoided to be adhered to at electrode structure 140. Thus, it is possible to improve the service life of film structural component 100.For example, insulation system can form the spacer or buffering for diaphragm area 113 Part.The vertical dimension of the second part of insulation system may, for example, be in conductive film layer 111 and hanging down between electrode structure 140 More than 10% (or 20%, 30% or 40%) of straight distance below with 90% (or 80%, 70% or 60%).

For example, second insulating layer can be arranged vertically between electrode structure 140 and diaphragm area 113.Second insulating layer Cavity 150 can laterally be surrounded.

For example, the material of insulation system and the material of second insulating layer can be different.Second insulating layer and (first) are insulated Layer 120 can be for example including identical material.Second insulating layer can be the insulating layer of such as structuring.

For example, conductive counter-electrode layer 141 can be divided into first part and second part by gap.First part and second Dividing can be electrically insulated from each other.A part (such as second part) in the part of conductive counter-electrode layer 141 can be set as a result, It sets on undefined current potential (" floating potential ").For example, gap can surround conductive counter-electrode from three sides or Ω shapes The second part of layer 141.The second part of conductive counter-electrode layer 141 may, for example, be the fringe region of conductive counter-electrode layer 141.

For example, the first part of conductive counter-electrode layer 141 may be coupled to contact structures.The of conductive counter-electrode layer 141 Two parts can be that current potential is free (such as electrically floating).Thus, it is possible to reduce the parasitic capacitance of film structural component.As a result, true (for example, detecting sound wave by means of film structural component when determining the capacitance of the capacitor formed by membrane structure 110 and to electrode structure 140 When), signal-to-noise ratio can be improved.Thus, it is possible to form the film structural component with improved electrical characteristics.

For example, bearing substrate 130 can have gap.(the first) insulating layer 120 can laterally surround gap.It leads as a result, The surrounding enviroment for the film structural component 100 that the diaphragm area 113 of electrolemma layer 111 may be coupled to.Pass through the week in film structural component 100 as a result, Pressure change (for example, the pressure change caused by sound wave) in surrounding environment, may be implemented the offset of diaphragm area 113.

For example, gap can be laterally located in the region of cavity 150.For example, gap can penetrate bearing substrate 130. Optionally, the depth in gap can be less than the thickness of bearing substrate 130.

For example, the lateral dimension of the diaphragm area 113 of conductive film layer 111 can be at the surface of bearing substrate 130 131 110% or more (or 125% or more or 150% or more) of the lateral dimension in gap.As a result, in the surrounding enviroment of film structural component 100 In pressure change when, the offset of diaphragm area 113 can be reduced.Thus, it is possible to detect higher pressure by means of film structural component 100 Or higher pressure difference.

For example, anti-sticking layer can be disposed at the surface of the diaphragm area 113 of the conductive film layer 111.It is possible thereby to keep away Exempt from diaphragm area 113 deviate during the conductive film layer 111 to the adherency at electrode structure 140.It is possible thereby to increase film structure The service life of part 100.

For example, hydrophobic layer can be disposed at the surface of the diaphragm area 113 of conductive film layer 111.It is possible thereby to avoid Water accumulation at 113 surface of diaphragm area.It is possible thereby to reduce the corrosion of diaphragm area, and thus improve the service life of film structural component 100.

For example, anti-sticking layer or hydrophobic layer can be perfluoro decyl trichlorosilane (FDTS) layers.Thus anti-sticking layer or hydrophobic layer It can inexpensively be arranged on the surface of diaphragm area 113.Thereby, it is possible to inexpensively provide film structural component 100.The perfluor last of the ten Heavenly stems Base trichlorosilane layer may, for example, be single layer (for example, single layer).

For example, bearing substrate 130 can be glass matrix (for example, chip glass or sheet glass) or semiconductor substrate (example Such as, semiconductor wafer or semiconductor chip).For example, bearing substrate 130 can be silicon (Si) base semiconductor matrix, silicon carbide (SiC) Base semiconductor matrix, GaAs (GaAs) base semiconductor matrix, gallium nitride (GaN) base semiconductor matrix or insulating silicon (SOI) Semiconductor substrate.

For example, vertical direction, vertical dimension or perpendicular to the surface of bearing substrate 130 131 depth and be parallel to The horizontal direction or lateral dimension on the surface 131 of bearing substrate 130 can be measured.The surface 131 of bearing substrate 130 being capable of example The front side of bearing substrate 130 in this way.The front side of bearing substrate 130 may, for example, be the surface of bearing substrate 130, on a surface Than manufacturing more complicated structure on the rear side of bearing substrate 130, this is because when having formd structure on front side, after The technological parameter (for example, temperature) of side and processing can be restricted.

For example, conductive layer, which can have, is less than 1 × 10¹⁵Ω m (or it is less than 1 × 10¹⁰Ω m are less than 1 × 10⁵Ω m, or be less than 1 Ω m) specific (electricity) resistance.

For example, the diaphragm area 113 of conductive film layer 111 and capacitor can be formed to electrode structure 140.By making diaphragm area 113 deviate relative to electrode structure 140, thus it is possible to vary the capacitance of capacitor.For example, film structural component 100 may include circuit, it should Circuit is used for sensing capacitor capacitance variations and generates the electric signal for the condenser capacitance variation for indicating detected.It is carrying In the case that matrix 130 is semiconductor substrate, circuit can be formed on semiconductor substrate.

For example, film structural component 100 can be the element of MEMS (MEMS) component (for example, MEMS microphone), Mike The element of wind, the element of pressure sensor or acceleration transducer, or form MEMS component (for example, MEMS microphone), wheat Gram wind, pressure sensor or acceleration transducer.

For example, capacitive MEMS microphone may include that offset film (for example, diaphragm area 113) and can be connected to shell The static base electrode (for example, to electrode structure 140) of sound connector, and for bias (Vorspannen) and read special With integrated circuit (ASIC).

Fig. 2 shows the schematic cross-sectionals of other film structural component 200.Film structural component 200 can be as combined illustrated by Fig. 1 Film structural component 100 constructs like that.Film structural component 200 includes the membrane structure 110 (for example, film) being arranged on the first insulating layer 120.Film Structure 110 includes conductive film layer 111.In addition, the laterally projecting side more than the first insulating layer 120 in the edge 114 of conductive film layer 111 Edge 121.In addition, film 200 includes the second insulating layer 210 being arranged in membrane structure 110.It is disposed in second insulating layer 210 To electrode structure 140 (such as backboard).There are multiple gaps 220 to electrode structure 140.In addition, to electrode structure 140 and leading Cavity 150 is vertically arranged between electrolemma layer 111.For example, can realize the week of cavity 150 and film structural component 200 by gap 220 Pressure balance between surrounding environment.Second insulating layer 210 laterally limits cavity 150.In addition, bearing substrate 130 has gap 230.The lateral dimension in gap 230 is less than the cross of the lateral dimension of cavity 150 and the diaphragm area 113 less than conductive film layer 111 To size.In addition, being disposed with the first contact structures 240 on conductive film layer 111, and it is disposed on to electrode structure 140 Second contact structures 250.Such as contact structures 240,250 may be used as the connection for conductive film layer 111 and to electrode structure 140 Junction (such as bonding structure).For example, the metal layer that contact structures 240,250 can include respectively structuring (such as is tied The aluminium layer of structure) or structuring alloy-layer (such as aluminum-copper alloy layer of structuring).

Fig. 2 shows the examples with four layers of film structural component 200.Such as film structural component can be formed or manufactured in two weeks 200.For example, described four layers may include film (for example, membrane structure 110), backboard (for example, to electrode structure 140), one or more A conjunction plane (for example, contact structures 240,250) and cavity 150.For example, in film structural component 200, it is all unnecessary to delete Element, and can pass through intellectual technology engineering (for example, when forming the film structural component 200) realize low cost.

For example, in film structural component 200, the quantity of layer can be reduced to bare minimum according to energy converter basic function： Can offset film (for example, diaphragm area 113), the static base electrode of perforation or backboard (for example, to electrode structure 140), towards holding Carry the access aperture (for example, gap 230) of the film in matrix 130 and with the metallic connection parts of external circuit device (for example, contacting Structure 240,250).

Other concrete condition and aspect combines above-mentioned or aftermentioned embodiment to be mentioned.Shown in fig. 2 Embodiment can include corresponding to the optional additional feature of the one or more of one or more aspects, and the feature combines The proposed scheme either embodiment illustrated by one or more aforementioned (such as Fig. 1) or aftermentioned (such as Fig. 3-Figure 10) It is mentioned.

Fig. 3 shows the schematic cross-sectional of other film structural component 300.Film structural component includes the film knot for having conductive film layer 111 Structure 110.Conductive film layer 111 has suspension region 112 and diaphragm area 113.In addition, the suspension region 112 of conductive film layer 111 is arranged On (first) insulating layer 120.In addition, (first) insulating layer 120 is arranged on bearing substrate 130.In addition, film structural component 300 wraps It includes to electrode structure 140.Include gap 220 to electrode structure 140.In addition, in the conductive counter-electrode layer to electrode structure 140 Cavity 150 is vertically arranged between 141 and the diaphragm area 113 of conductive film layer 111.In addition, film structural component 300 includes to electrode structure 140 insulation system 310.The first part of insulation system 310 is arranged in the wall portion 221 in the gap 220 of electrode structure 140 In at least part.In addition, the second part of insulation system 310 extends vertically up in cavity 150.

By at least part of the wall portion 221 in gap 220 arrange insulation system 310, can inexpensively by Insulation system 310 is mechanically anchored at electrode structure 140.Thus, it is possible to inexpensively provide film structural component 300.In addition, Since the second part of insulation system 310 extends perpendicularly into cavity 150, the diaphragm area 113 of conductive film layer 111 to It and the offset in the direction of electrode structure 140 is restricted.It is possible thereby to avoid the film in the sharp deflections of diaphragm area 113 Region 113 and the contact between electrode structure 140.It is possible thereby to avoid the film area in the sharp deflections of diaphragm area 113 Domain 113 is adhered to at electrode structure 140.It is possible thereby to increase the service life of film structural component 300.

Film structural component 300 and its element can carry out structure as film structural component 100 and its element in conjunction with illustrated by Fig. 1 It makes.For example, (first) insulating layer can be arranged on the surface 131 of bearing substrate 130.

Other concrete condition and aspect combines above-mentioned or aftermentioned embodiment to be mentioned.Shown in fig. 3 Embodiment can include corresponding to the optional additional feature of the one or more of one or more aspects, in conjunction with proposed Scheme either mention by one or more aforementioned embodiments (such as Fig. 1-Fig. 2) or aftermentioned embodiment (such as Fig. 4-Figure 10) The feature.

Fig. 4 shows the schematic cross-sectional of other film structural component 400.Film structural component 400 includes the film for having conductive film layer 111 Structure 110.Conductive film layer 111 includes the first conductive material.In addition, conductive film layer 111 has suspension region 112 and diaphragm area 113.In addition, the suspension region 112 of conductive film layer 111 is arranged on (first) insulating layer 120.In addition, (first) insulating layer 120 It is arranged on bearing substrate 130.Film structural component 400 further include have conductive counter-electrode layer 141 to electrode structure 140.It is conductive right Electrode layer 141 further includes the second conductive material.In addition, between the diaphragm area 113 to electrode structure 140 and conductive film layer 111 It is vertically arranged to have cavity 150.In addition, the first conductive material is different from the second conductive material.

Because conductive film layer 111 and conductive counter-electrode layer 141 have different conductive materials, conductive counter-electrode layer 141 can be formed by conductive material more lower than 111 cost of conductive film layer.Thereby, it is possible to inexpensively provide film structural component 400。

For example, the first conductive material can be flexible conducting material.Second conductive material may, for example, be rigid conductive material Material.For example, (first) insulating layer can be arranged on the surface 131 of bearing substrate 130.

For example, the first conductive material can be polysilicon.Second conductive material can be at least one in metal and alloy Kind.It is possible thereby to save be used to form conjunction plane (such as bonding structure) to the with high costs attached of electrode structure 140 Add metallization.It is possible thereby to inexpensively provide membrane structure element 400.For example, the second conductive material can be aluminium, copper or aluminium Copper alloy.

Film structural component 400 and its element can carry out structure as film structural component 100 and its element in conjunction with illustrated by Fig. 1 It makes.

Other concrete condition and aspect combines above-mentioned or aftermentioned embodiment to be mentioned.Shown in Fig. 4 Embodiment can include corresponding to the optional additional feature of the one or more of one or more aspects, and the feature combines Proposed scheme either one or more aforementioned embodiments (such as Fig. 1-Fig. 3) or aftermentioned embodiment (such as Fig. 5- Figure 10) it is mentioned.

Fig. 5 shows the flow chart for the method 500 for being used to form other film structural component.This method 500 is included in (first) The conductive film layer 111 of 510 membrane structures 110 is formed on insulating layer 120.Conductive film layer 111 has suspension region 112 and diaphragm area 113.In addition, (first) insulating layer 120 is arranged on bearing substrate 130.In addition, method 500 includes at least in conductive film layer 111 Region in laterally form 520 pairs of electrode structures 140.The method 500 further includes：Described to electrode structure 140 and institute It states and forms 530 vertically arranged cavitys 150 between the diaphragm area 113 of conductive film layer 111, to which the cavity 150 is from described right The conductive counter-electrode layer 141 of electrode structure 140 extends vertically up to the diaphragm area 113 of the conductive film layer 111.Conductive film layer 111 With the vertical range in conductive film layer 111 and between electrode structure 140, more than half (or is more than at (transverse direction) edge 114 75%, 100%) it is amplitude, laterally projecting (transverse direction) edge 121 more than (first) insulating layer 120 to be more than 90% or be more than.

Since (transverse direction) edge 114 of conductive film layer 111 is in conductive film layer 111 and hanging down between electrode structure 140 It is directly laterally projecting (transverse direction) edge 121 more than (first) insulating layer 120 of amplitude apart from more than half, therefore can optimizes and lead The electrolysis coupling (for example, parasitic capacitance can be reduced) of electrolemma layer 111 and bearing substrate 130.It is determining as a result, by membrane structure 110 With (such as when detecting sound wave by means of film structural component) when the capacitance of the capacitor formed to electrode structure 140, letter can be improved It makes an uproar ratio.Thus, it is possible to form the film structural component with improved electrical characteristics.In addition, due to (transverse direction) edge 114 of conductive film layer 111 It is more than (first) that using the vertical range in conductive film layer 111 and between electrode structure 140, more than half is laterally projecting as amplitude (transverse direction) edge 121 of insulating layer 120, therefore cause when diaphragm area 113 deviates the conductive film layer 111 protrudes past institute State region (such as in the opposite direction) offset at (transverse direction) edge 121.As a result, when diaphragm area 113 deviates, reduce conductive film The voltage of layer 111, especially reduces the voltage in suspending region 112.Thus, it is possible to form the film structural component with the long-life.

For example, film structural component 100 described in conjunction with Figure 1, film described in conjunction with Figure 2 can be formed by means of method 500 Component 200, film structural component described in conjunction with Figure 3 300 and/or film structural component described in conjunction with Figure 4 400.

For example, it may include depositing conductive layer and structure at (first) insulating layer 120 to form 510 conductive film layers 111 Change deposited conductive layer.

For example, method 500 may further include the formation second insulating layer 210 in membrane structure 110.To electrode structure 140 formation 520 can be happened in second insulating layer 210.Method 500 may further include in electrode structure 140 Form gap 220.Gap 220 can be penetrated right through to electrode structure 140.It is possible thereby in sky in subsequent processing step Insulation system 310 (such as being electrically isolated the part to electrode structure 140) is formed in gap.For example, in electrode structure 140 Forming gap 220 can execute before forming 530 cavitys 150.

Optionally, the formation 530 of cavity 150 may include laterally removed in the region of diaphragm area 113 it is sacrificial Domestic animal layer (for example, carbon-coating).

For example, gap 220 extends in second insulating layer 210.Gap 220 can terminate in and to electrode structure In 140 such vertical range：The vertical range be the thickness of second insulating layer 210 25% (or 50%, 75% or 90%) more than.

For example, gap 220 can terminate in and in such vertical range of electrode structure 140：The vertical range is 75% (or 60% or 50%) of 210 thickness of second insulating layer is below.Since the vertical dimension in the gap of second insulating layer 210 is The 75% of conductive film layer 111 and the vertical range between electrode structure 140 is hereinafter, therefore can be in subsequent processing step Structure is formed in the gap of second insulating layer 210, which extend into cavity 150 and be spaced with conductive film layer 111.

Such as conductive counter-electrode layer 141 can be divided at least two electrically insulative portions by gap 220.Conduction is to electricity as a result, A part in the part of pole layer 141 can be set on undefined current potential (" floating potential ").It is possible thereby to reduce The parasitic capacitance of film structural component.(the example when determining the capacitance of the capacitor formed by membrane structure 110 and to electrode structure 140 as a result, Such as, when detecting sound wave by means of film structural component), signal-to-noise ratio can be improved.Thus, it is possible to form the film with improved electrical characteristics Component.

For example, it may include covering to electrode structure 140 and etching through covering to form gap 220 in electrode structure 140 Lid to electrode structure 140.It can be real for example in to the processing step being etched to electrode structure 140 through cover Gap 220 is formed in present second insulating layer 210.

For example, method 500 can also include forming third insulation on the wall portion 221 to the gap 220 of electrode structure 140 Layer.For example, third insulating layer can be formed by the deposition of insulative material on the surface to electrode structure 140.It is exhausted in deposition When edge material, insulating materials can enter in the gap 220 to electrode structure 140.

For example, third insulating layer can fill the gap 220 to electrode structure 140.It is possible thereby to (such as in segmentation) Realize the mechanical connection of the wall portion opposite each other in gap 220.

For example, the material of second insulating layer 210 and the material of third insulating layer can be different.Thus second insulating layer 210 It can be treated differently for printing in subsequent processing step with third insulating layer.For example, in subsequent processing step, second absolutely Edge layer 210 can be removed at least partly, and third insulating layer is retained, and vice versa.Such as second insulating layer 210 can be with It is silicon oxide layer, and third insulating layer can be silicon nitride layer, vice versa.

Such as method 500 can also include partly removing third insulating layer so that the remainder shape of third insulating layer At insulation system 310.At least one first part of insulation system 310 can be arranged in the gap 220 of electrode structure 140 At at least part of wall portion 221.It is possible thereby to the spacer or bolster formed by insulation system 310 be formed, for limit The maximum vertical displacement of the diaphragm area 113 of conductive film layer 111 processed.It is possible thereby to which diaphragm area 113 is avoided to be adhered to electrode structure At 140.Thus, it is possible to form the film structural component with the long-life.

Such as it forms 530 cavitys 150 and may include：In the region of the diaphragm area 113 of the conductive film layer 111 laterally Remove second insulating layer 210.During forming 530 cavity 150, the conductive film layer 111 is formed above the first insulating layer 120 Laterally projecting portion.Such as laterally projecting portion can be formed in this way, that is, (transverse direction) edge 114 of conductive film layer 111 is in conduction Film layer 111 and the vertical range more than half (or be more than 75%, be more than 90% or more than 100%) between electrode structure 140 For amplitude, laterally projecting (transverse direction) edge 121 more than (first) insulating layer 120.

Such as method 500 may include the first contact structures being collectively formed at the suspension region 112 of conductive film layer 111 240 and the second contact structures 250 at conductive counter-electrode layer 141.It is possible thereby to form the conduction for making membrane structure 110 Film layer 111 and the context layer that (such as by means of bonding structure) is in electrical contact to the conductive counter-electrode layer 141 of electrode structure 140.Example Such as, the first contact structures 240 are collectively formed and can include with the second contact structures 250：Deposit conductive layer (such as metal layer) The conductive layer being deposited with structuring so that the first contact structures 240 and the second contact structures 250 are retained.First contact knot Structure 240 for example can simultaneously or in a processing step be formed with the second contact structures 250.

For example, removal insulating layer may include isotropism or anisotropic etch process.Etch process can be dry Formula etch process (for example, reactive ion etching) or wet chemical etching technique.

Other concrete condition and aspect combines above-mentioned or aftermentioned embodiment to be mentioned.Shown in fig. 5 Embodiment can include corresponding to the optional additional feature of the one or more of one or more aspects, and the feature combines The proposed scheme either reality illustrated by one or more aforementioned (such as Fig. 1-Fig. 4) or aftermentioned (such as Fig. 6 a- Figure 10) Mode is applied to be mentioned.

Fig. 6 a to Fig. 6 h show the exemplary process step for being used to form other film structural component 600；The shape of film structural component 600 At can with combine Fig. 5 description method 500 similarly execute.In addition, film structural component 600 can be as in conjunction with the film structure described in Fig. 2 Part 200 is formed like that.

Fig. 6 a show the first processing step for being used to form film structural component 600.It sinks on the surface of bearing substrate 130 131 The first insulating layer 120 of product and conductive film layer 111.For example, bearing substrate 130 can be silicon substrate, the first insulating layer 120 can be borrowed Help chemical vapor deposition from deposition in tetraethyl orthosilicate (TEOS) (for example, stopping to 600nm), and conductive film layer 111 can To be amorphous polysilicon layer.First insulating layer 120 being capable of such as thickness with 600nm.For example, conductive film layer 111 can have There is the thickness of 330nm.After depositing conductive film layer 111, such as the p injection (examples of conductive film layer 111 (such as film) can be carried out Such as the injection of boron atom or phosphorus atoms) and subsequent annealing RR.For example, conductive film layer 111 can be the member of membrane structure 110 Part.

Fig. 6 b show the second processing step for being used to form film structural component 600.First insulating layer 120 and conductive film layer 111 It is structured.For example, the first insulating layer of structuring 120 and conductive film layer 111 may include the first insulating layer 120 of etching and conduction Film layer 111 (for example, poly- TEOS is etched).

For example, identical mask layer can be utilized or use poly- mask as the hard mask for oxide dry etching Structuring come the first insulating layer (for example, oxide) for realizing conductive film layer (for example, poly layer) and below conductive film layer. In saddlebag, the Resist Technology for topology and/or following processing step can be used for example.

Fig. 6 c show the third processing step for being used to form film structural component 600.The second insulation of deposition on bearing substrate 130 Layer 210 and conductive counter-electrode layer 141.For example, second insulating layer 210 can be by means of chemical vapor deposition from tetraethyl orthosilicate (TEOS) (for example, with distance of 3 × 600nm) is deposited in, and conductive counter-electrode layer 141 can be amorphous polysilicon layer.Make For alternative, conductive counter-electrode layer 141 may include thin silicon nitride (Si₃N₄) layer and polysilicon layer.It herein can be in film structure Charge effects occur in the operation of part.Second insulating layer 210 can be for example with 1.8 μm of thickness.For example, conductive counter-electrode layer 141 can be with 1.5 μm of thickness.After depositing conductive counter-electrode layer 141, such as conductive counter-electrode layer 141 can be carried out The p injections (such as injection of boron atom or phosphorus atoms) of (such as backboard) and subsequent annealing RR.For example, conductive counter-electrode layer 141 can be the element to electrode structure 140.

FIG. 6d shows that the 4th processing steps for being used to form film structural component 600.Second insulating layer 210 and conductive counter-electrode layer 141 are structured.Herein, three gaps 220 are formed in conductive counter-electrode layer 141 and second insulating layer 210.Gap 220 Extend up to conductive film layer 111.For example, structuring second insulating layer 210 and conductive counter-electrode layer 141 may include etching second Insulating layer 210 and etching conductive counter-electrode layer 141 (for example, poly- TEOS is etched).

For example, poly layer that can be in conductive counter-electrode layer 141 or on the edge of conductive film layer 111 or on film edge The middle topological structure for forming about 1 μm.In a saddlebag, for example, can be before oxide etching (for example, in etching the Before dioxide layer 210) realize the poly- spacer of removal.Herein, such as the bottom of conductive counter-electrode layer 141 or poly layer can be carried out Etching is cut, undercutting etching has the influence of the critical dimension to gap 220 (or perforation).

Fig. 6 e show the 5th processing step for being used to form film structural component 600.The deposited metal layer on bearing substrate 130 620.For example, metal layer 620 can be aluminium layer.For example, the metal (for example, aluminium) of metal layer 620 can penetrate 220 (example of gap Such as perforation) and cover the side wall of table top.

Fig. 6 f show the 6th processing step for being used to form film structural component 600.Deposited metal layer 620 is structured, To form the first contact structures 240 on the surface of conductive film layer 111, and formed on the surface of conductive counter-electrode layer 141 Second contact structures 250.For example, the metal layer 620 that structuring is deposited may include each to same of deposited metal layer 620 Property etching (for example, wet chemical etching), such as aluminium etching.For example, contact structures 240,250 can be formed for being in electrical contact conduction The conjunction plane (such as bonding structure) of film layer 111 and conductive counter-electrode layer 141.

For example, saddlebag may include isotropic aluminium etching (for example, passing through wet etching).Herein, it may be implemented Contact structures 240,250 or the high reliability of metallization.Furthermore it is possible to omit passivation.

Fig. 6 g show the 7th processing step for being used to form film structural component 600.Gap 230 is formed in bearing substrate 130. For example, before forming gap 230, the thickness of bearing substrate 130 can be reduced to 350 μm (for example, passing through grinding).For example, It may include reactive ion etching (English " deep reaction ion etching ", DRIE) to form gap 230.

For example, mill membrane process can carry out in mesa edge.Herein, for example, at least conductive counter-electrode layer 141 is arranged On the film of tolerance surface shape, and it is ground the rear side 132 of bearing substrate 130.

For example, protectiveness resist layer can be applied in a saddlebag, and execute steady film forming/demoulding work Skill.

Fig. 6 h show the 8th processing step for being used to form film structural component 600.Including conductive counter-electrode layer 141 to electricity Between pole structure 140 and the conductive film layer 111 of membrane structure 110, second insulating layer 210 is removed by part and forms cavity 150. In the case of part removal second insulating layer 210, the protruding portion of conductive film layer 111 is also formd above the first insulating layer 120, So that the laterally projecting edge 121 more than the first insulating layer 120 in the edge 114 of conductive film layer 111.For example, by means of hydrogen fluoride (HF) gas phase release process can partly remove second insulating layer 210.The remainder of second insulating layer 210 forms cavity 150 Horizontal boundary.Then, such as perfluoro decyl trichlorosilane (FDTS) anti-sticking layer can deposit (such as on conductive film layer 111 And/or on conductive counter-electrode layer 141).

Such as, it is convenient to omit spacer or bolster (English " convex block ") or adherency are formed (for example, in conductive film layer At 111, at conductive counter-electrode layer 141).

For example, the list of gas phase etching (for example, quickly and only with about 1 μm) and self-organizing can be executed in a saddlebag Layer (SAM) coating (for example, FDTS anti-sticking layers).Herein, the signal layer coating of self-organizing is also used as (potential) passivation.

The technique that Fig. 6 a to Fig. 6 h show poly-poly-arrangement with no spacer or bolster (English " convex block ") The example of flow.For example, in poly-poly-arrangement, conductive film layer 111 and conductive counter-electrode layer 141 can be polysilicon layers.

For example, processing step as much as possible can be skipped with cost of implementation saving in technological process.For this purpose, can be with Spacer or bolster are avoided the formation of, because the signal layer coating (such as FDTS anti-sticking layers) of self-organizing can undertake this task. This can be advanced optimized by process exploitation.In addition, the ripple of membrane structure 110 can be saved thus (such as optimizing film The perpendicular grooves and/or concentric ring of the tensile stress in region 113).Herein, polysilicon stress engineering can be executed.Furthermore it is possible to Omit the segmentation to electrode structure 140.It is possible thereby to realize increase parasitic capacitance, and it is achieved in average signal-to-noise ratio (SNR) System limitation.In addition, can save diaphragm area 113 thus pulls in test.Replace scheme as it, resonance can be based on (for example, determining the resonant frequency of membrane structure 110) executes dynamic wafer test.Herein, test can be sampled.

For example, the above-mentioned scheme enumerated can also be applied to other schemes of film structural component.For example, if 110 cloth of membrane structure It sets above to electrode structure 140, or if film is located at top, similar or identical principle can be followed and/or can be with Execute similar technological process.It can be additionally carried out chemically mechanical polishing herein.In addition, with double to electrode structure In the scheme of (such as with double backboards), similar or identical principle can be followed and/or similar technological process can be executed. Extra play (such as second pair of electrode structure) can be formed herein.

Other concrete condition and aspect combines above-mentioned or aftermentioned embodiment to be mentioned.In Fig. 6 a to Fig. 6 h Shown in embodiment can include corresponding to the optional additional features of the one or more of one or more aspects, the spy Sign combines proposed scheme, and either one or more aforementioned (such as Fig. 1-Fig. 5) or aftermentioned (such as Fig. 7 a- Figure 10) are described Bright embodiment is mentioned.

Fig. 7 a to Fig. 7 h show the exemplary process step for being used to form other film structural component 700；Form film structural component 700 The method 500 for combining Fig. 5 descriptions can be similar to and/or executed similar to the technological process for combining Fig. 6 a to Fig. 6 h to describe.Separately Outside, film structural component 700 can be formed as the film structural component 300 described in conjunction with Fig. 3.

Processing step shown in Fig. 7 a can similarly be executed with the processing step of combination Fig. 6 d descriptions.In bearing substrate The conductive film layer 111 of the first insulating layer 120 and structuring of structuring is formed on 130.In addition, forming the second insulation of structuring The conductive counter-electrode layer 141 of layer 210 and structuring.Herein, it is formed in conductive counter-electrode layer 141 and second insulating layer 210 Three gaps 220.The depth in the gap 220 in second insulating layer 210 is between conductive counter-electrode layer 141 and conductive film layer 111 Vertical range half.For example, structuring second insulating layer 210 and conductive counter-electrode layer 141 may include that etching is conductive right Electrode layer 141 and (such as by time control) half-etching second insulating layer 210 (for example, half poly- TEOS etchings).For example, gap 220 can be with the lateral cross of round or ellipse.

Then, as shown in figure 7b, deposition third insulating layer 710.Third insulating layer 710 enters gap 220 and covers it Wall portion.For example, insulating layer 710 can be the thin silicon nitride (Si for having 200nm thickness₃N₄) layer.

Then, as shown in Figure 7 c, part removes deposited third insulating layer 710, to form insulation system 310.Insulation Structure 310 is arranged at the wall portion in gap 220.In addition, being disposed with insulation system 310 in the edge of conductive counter-electrode layer 141. Part removal third insulating layer 710 can be by means of etch process (for example, by means of Si₃N₄Spacer etch) it carries out.At this In the edge 143 of conductive counter-electrode layer 141 and the edge 311 of insulation system 310 can be inclined or rounding.

In subsequent processing step, as shown in figure 7d, gap 220 (such as being etched by means of complete TEOS) is recessed into Conductive film layer 111.Then, as shown in figure 7e, deposited metal layer 620 (for example, aluminium layer).Herein, metal layer 620 enters gap In 220.For example, the material of metal layer 620 (such as aluminium) can enter in gap 220 (such as in perforation) and cover the side of table top Wall.

Then, as depicted in fig. 7f, deposited metal layer 620 is structured, to be formed on the surface of conductive film layer 111 First contact structures 240, and the second contact structures 250 are formed on the surface of conductive counter-electrode layer 141.For example, structuring Deposited metal layer 620 may include the isotropic etching (for example, wet chemical etching) of deposited metal layer 620, example Such as, aluminium etches.For example, contact structures 240,250 can be formed for being in electrical contact conductive film layer 111 and conductive counter-electrode layer 141 Conjunction plane (such as bonding structure).

Later, as shown in figure 7g, gap 230 is formed in bearing substrate 130.For example, before forming gap 230, hold Carrying the thickness of matrix 130 can be reduced to 350 μm (for example, passing through grinding).For example, formed gap 230 may include reaction from Son etching (English " deep reactive ion etch ", DRIE).

In subsequent processing step, as shown in Fig. 7 h, including conductive counter-electrode layer 141 to electrode structure 140 with Between the conductive film layer 111 of membrane structure 110, second insulating layer 210 is removed by part and forms cavity 150.The removal the in part In the case of two insulating layers 210, the protruding portion of conductive film layer 111 is also formd above the first insulating layer 120 so that conductive film The laterally projecting edge 121 more than the first insulating layer 120 in edge 114 of layer 111.For example, being released by means of hydrogen fluoride (HF) gas phase Second insulating layer 210 can partly be removed by letting off journey.The remainder of second insulating layer 210 forms the horizontal boundary of cavity 150.

For example, insulation system 310 (for example, silicon nitride column casing proximate matter) is used as anti-stick bolster, the insulation system installation At gap 220 (for example, perforation) and extend in cavity.

Fig. 7 a to Fig. 7 h are shown with the technique with spacer or poly-poly-arrangement of bolster (English " convex block ") The example of flow.For example, in poly-poly-arrangement, conductive film layer 111 and conductive counter-electrode layer 141 can be polysilicon layers.

Other concrete condition and aspect combines above-mentioned or aftermentioned embodiment to be mentioned.In Fig. 7 a to Fig. 7 h Shown in embodiment can include corresponding to the optional additional features of the one or more of one or more aspects, the spy Sign combines proposed scheme, and either one or more aforementioned (such as Fig. 1-Fig. 6 h) or aftermentioned (such as Fig. 8-Figure 10) are described Bright embodiment is mentioned.

Fig. 8 shows the schematic cross-sectional of other film structural component 800.Film structural component 800 can be similar to and combine Fig. 7 a to 7h Illustrated film structural component 700 constructs like that.Conductive counter-electrode layer 141 have multiple wide gap 220-1 and one it is narrow Gap 220-2.Gap 220-2 is very narrow so that in the processing step shown in Fig. 7 b and Fig. 7 c, the not shape in the 220-2 of gap The insulation system 310-1 being spaced at two, but form unique insulation system 310-2 of laterally filling gap 220-2.By A part 145 for this conductive counter-electrode layer 141 can be electrically isolated, to form current potential free space (English " float area "). Herein, the part 145 of conductive counter-electrode layer 141 can be mechanically connected to conductive counter-electrode layer 141 by insulation system 310-2 Rest part.

Fig. 8 shows the example of technological process, has poly-poly-cloth with spacer or bolster (English " convex block ") It sets, and with for dividing the alternative (such as with the alternative divided for backboard) to electrode structure 140.Example Such as, in poly-poly-arrangement, conductive film layer 111 and conductive counter-electrode layer 141 can be polysilicon layers.

For example, when be formed with less than the to the gap 220-2 (or structuring portion) of electrode structure 140 (for example, backboard) When the slot of the width of three insulating layer 710 (for example, spacer convexity layer) double thickness, third insulating layer 710 is formed along slot Connecting bridge.It is possible thereby to realize to the electrically separated of electrode structure 140 or conductive counter-electrode layer 141 (for example, polysilicon backsheet layer).

Other concrete condition and aspect combines above-mentioned or aftermentioned embodiment to be mentioned.It is as shown in fig. 8 Embodiment can include corresponding to the optional additional feature of the one or more of one or more aspects, and the feature combines The proposed scheme either reality illustrated by one or more aforementioned (such as Fig. 1-Fig. 7 h) or aftermentioned (such as Fig. 9 a- Figure 10) Mode is applied to be mentioned.

Fig. 9 a to Fig. 9 h show to form the exemplary process step of another film structural component 900.The formation of film structural component 900 can The technological process of Fig. 6 a to Fig. 6 h descriptions is combined similar to the method 500 for combining Fig. 5 descriptions, to be similar to and/or similar to knot The technological process of Fig. 7 a to Fig. 7 h descriptions is closed to execute.In addition, film structural component 900 can as in conjunction with the film structural component 300 described in Fig. 3 that Sample is formed.

Processing step shown in Fig. 9 a can be similar to the processing step in conjunction with described in Fig. 7 a to execute.In bearing substrate The conductive film layer 111 of the first insulating layer 120 and structuring of structuring is formed on 130.In addition, forming the second insulation of structuring The conductive counter-electrode layer 141 of layer 210 and structuring.Here, it is formed in conductive counter-electrode layer 141 and second insulating layer 210 wide Gap 220-1 and narrow gap 220-2,220-3.For example, gap 220-2 can be used for spacer or bolster (English " convex block ") narrower bore, and gap 220-3 can be the narrow slot for segmentation.The depth in the gap 220 in second insulating layer 210 Degree is the half of the vertical range between conductive counter-electrode layer 141 and conductive film layer 111.For example, structuring second insulating layer 210 May include that etching conductive counter-electrode layer 141 and (such as by time control) half-etching second are exhausted with conductive counter-electrode layer 141 Edge layer 210 (for example, half poly- TEOS etchings).

Then, as shown in figure 9b, deposition third insulating layer 710.Third insulating layer 710 enters gap 220 and covers its wall Portion.For example, insulating layer 710 can be the thin silicon nitride (Si for having 200nm thickness₃N₄) layer.Third insulating layer 710 is filled up completely Narrow gap 220-2,220-3.

Later, as is shown in fig. 9 c, deposited third insulating layer 710 is (for example, silicon nitride (Si₃N₄) layer) be partially removed To form insulation system 310.Insulation system 310 is arranged in gap 220-2,220-3.The part of third insulating layer 710 removes May include etch process or isotropic Si₃N₄。

In subsequent processing step, as shown in figure 9d, gap 220-1 be recessed into conductive film layer 111 (for example, by means of Complete TEOS etchings).Later, as shown in figure 9e, deposited metal layer 620 (for example, aluminium layer).In this case, metal layer 620 enter in the 220-1 of gap.For example, the material of metal layer 620 (for example, aluminium) can enter gap 220-1 (for example, into Perforation) and table top side wall.

Then, as shown in figure 9f, deposited 620 structuring of metal layer, to be formed at the surface of conductive film layer 111 First contact structures 240 and the second contact structures 250 at the surface of conductive counter-electrode layer 141.For example, structuring is deposited Metal layer 620 may include deposited metal layer 620 isotropic etching (for example, wet chemical etching), for example, aluminium lose It carves.For example, contact structures 240,250 can form the conjunction plane for being in electrical contact conductive film layer 111 and conductive counter-electrode layer 141 (such as bonding structure).

Later, as shown in figure 9g, gap 230 is formed in bearing substrate 130.For example, before forming gap 230, hold Carrying the thickness of matrix 130 can be reduced to 350 μm (for example, passing through grinding).For example, formed gap 230 may include reaction from Son etching (English " deep reactive ion etch ", DRIE).

In subsequent processing step, as shown in Fig. 9 h, including conductive counter-electrode layer 141 to electrode structure 140 Between the conductive film layer 111 of membrane structure 110 cavity 150 is formd by partly removing second insulating layer 210.It is gone partly In the case of except second insulating layer 210, the protruding portion of conductive film layer 111 is also formd above the first insulating layer 120 so that lead The laterally projecting edge 121 more than the first insulating layer 120 in edge 114 of electrolemma layer 111.For example, by means of hydrogen fluoride (HF) gas Phase release process can partly remove second insulating layer 210.The remainder of second insulating layer 210 forms the transverse direction of cavity 150 Boundary.

For example, insulation system 310-1 can form spacer or bolster.Insulation system 310-2 can for example will be conductive It is electrically separated to the part 145 and the remainder of conductive counter-electrode layer 141 of electrode layer 141, to be formed with uncertain electricity The region (English " float area ") of position.Herein, the part 145 of conductive counter-electrode layer 141 can be via insulation system 310-2 It is mechanically connected to the remainder of conductive counter-electrode layer 141.

Fig. 9 a to Fig. 9 h show the example of technological process, have with spacer or bolster (English " convex block ") Poly-poly-arrangement, and with the segmentation to electrode structure 140 (such as with silicon nitride (Si₃N₄) segmentation or pass through silicon nitride Segmentation).For example, in poly-poly-arrangement, conductive film layer 111 and conductive counter-electrode layer 141 can be polysilicon layers.

For example, insulation system 310-1 can form silicon nitride (Si₃N₄) spacer or form silicon nitride (Si₃N₄) buffering Part.

Other concrete condition and aspect combines above-mentioned or aftermentioned embodiment to be mentioned.In Fig. 9 a to Fig. 9 h Shown in embodiment can include corresponding to the optional additional features of the one or more of one or more aspects, the spy Reality of the sign in conjunction with illustrated by proposed scheme either one or more aforementioned (such as Fig. 1-Fig. 8) or aftermentioned (such as Figure 10) Mode is applied to be mentioned.

Figure 10 shows the schematic cross-sectional of other film structural component 1000.Film structural component can be similar to and combine described by Fig. 4 Film structural component 400 and/or construct similar to the film structural component 600 in conjunction with described in Fig. 6 a to Fig. 6 h.With film structure shown in Fig. 6 h Part 600 is compared, and the conductive counter-electrode layer 141 of film structural component 1000 is metal layer (such as aluminium layer).It is possible thereby to save for conduction To the second contact structures 250 of the electrical contact (for example, by means of bonding structure) of electrode layer 141.

Figure 10 shows the example of the alternative for being further simplified film structural component.Herein, metallization also can For conductive counter-electrode layer 141 (for example, static backboard).This can lead to 3 layers of technology.Herein, can be for described three layers Conductive film layer 111 (such as film), conductive counter-electrode layer 141 (such as backboard with conjunction plane) and cavity 150.It is possible thereby to Realize the different mechanical properties of conductive counter-electrode layer 141 (for example, backboard).For example, it may be possible to will appear relative to the very big of silicon CT erroneous matchings.Additionally, it is possible to generate potential compression.In addition lower mechanical stiffness can be generated.

Other concrete condition and aspect combines above-mentioned or aftermentioned embodiment to be mentioned.It is as shown in fig. 10 Embodiment can include corresponding to the optional additional feature of the one or more of one or more aspects, and the feature combines Either one or more aforementioned (such as Fig. 1-9h) or aftermentioned illustrated embodiment are mentioned proposed scheme.

Some embodiments are related to the MEMS microphone of (for example, Ultra Low Cost (ULC)) of low cost.

Some embodiments are related to low-cost multilayer microphone.

According on one side, film structural component can be the element of conventional MEMS microphone system or form the MEMS of routine Microphone system.

According on one side, film structural component can be silicon (Si) MEMS microphone for having minimal number of optical layer.

According on one side, each function of the film structural component of (for example, microphone) can be related to lithography step.

According on one side, it is also possible to be located at the sacrificial layer under it using membrane structure portion and the etching of stator structure portion.

According on one side, MEMS structure element is cost sensitivity for (final) product.

According on one side, it may include a large amount of processing step to form MEMS component, includes 10 or more lithography layers, Cost can wherein be increased.

In the feature disclosed in explanation above-mentioned, following claims and attached drawing, can not only individually also can Enough in arbitrary combination, it is important and is used for the realization of the embodiment in its various design scheme.

Although having been combined device describes some aspects, it is clear, however, that these aspects are also constituted to correlation method Description, be also understood to the feature of corresponding method and step or method and step to the block or structural detail of device.It is similar Ground, combined method step or the aspect being described as method and step also illustrate that related device respective masses or concrete condition or The description of feature.

General the embodiment of the present invention can be implemented as program, firmware, computer program or the meter with program code Calculation machine program product is implemented as data, wherein when program is run on processor or programmable hardware component, program generation Code or data are effective for executing one of the method.Program code or data can also for example be stored in can be machine-readable On carrier or data medium.Program code or data can also be used as source code, machine code or syllabified code and conduct Other intermediate codes exist.Data medium can be digital storage media, magnetic storage medium (such as floppy disk, tape or hard Disk) or optical readable digital storage media.Programmable hardware component can pass through processor, computer processor (CPU= Central processing unit), graphics processor (GPU=graphics processing units), computer, computer system, dedicated integrated circuit (ASIC=application-specific integrated circuits), integrated circuit (IC=integrated circuits), monolithic system (SOC=systems on chip) may be programmed and patrol Collect element or field programmable gate array (FPGA=field programmable gate arrays) formation with microprocessor.

The principle of the disclosure is only described by the description and the appended drawings.It is thus apparent that those skilled in the art can be with Various arrangements are obtained, although these arrangements are not explicitly described or show herein, embody the principle of the disclosure simultaneously And it is comprised in its essence and protection domain.In addition, being to understand this public affairs in all example principles enumerated herein Reader is assisted when the principle opened and the scheme contributed further Development Technology by inventor, and should be interpreted unlimited System it is such especially cited by example and condition use.In addition, about the principle of the disclosure, in terms of and it is exemplary all Here statement and its special example is intended to include their analog.

For example, block diagram can for example indicate to embody the conceptual view of the exemplary circuit of the principle of the disclosure.With similar Mode, it should be appreciated that the representatives such as all procedure charts, flow chart, state transition graph, pseudocode are substantially presented on computer The various processes implemented in readable medium and by computer or processor, it is whether bright but regardless of such computer or processor Really show.Disclosed method can be executed by means of device in the description or in the claims, which has The device of each step in corresponding step for executing these methods.

Further, it is understood that multiple disclosures of operation or function disclosed in specification or claims are not It should be interpreted to be designed in the form of in specific sequence.Therefore, the disclosure of a variety of operations or function is not limited to specific Sequence, unless these operation or function it is for technical reasons and non-interchangeable.In addition, in several examples, single operation can To include or be segmented into multiple sub-operations.As long as no clearly excluding, then such sub-operation can be included and Form a disclosed part for this single operation.

In addition, following claim is incorporated into regard to this in detailed description, wherein each claim can be independent Example as separation.If each claim can be individually present as the example of separation, though it should be noted that So dependent claims in the claims can be related to the specific combination with one or more of the other claim, but its Its example also can include the combination of dependent claims and each other subordinates or subject matter of the independent claims.As long as no Illustrate to be not intended to specifically to combine, herein it has been suggested that these are combined.In addition, the feature of claim should also be included in it is each In a others independent claims, even if the claim is not to depend directly on the independent claims to be made.

Claims

1. a kind of film structural component (100,200,600,700,800,900,1000), including：

Membrane structure (110), the membrane structure include conductive film layer (111), wherein the conductive film layer (111) has suspension region (112) and diaphragm area (112), wherein the suspension region (112) of the conductive film layer (111) is arranged on insulating layer (120), and And the wherein described insulating layer (120) is arranged on bearing substrate (130)；And

To electrode structure (140), wherein in the diaphragm area (113) to electrode structure (140) and the conductive film layer (111) Between vertically arranged have cavity (150)；

Wherein, the edge (114) of the conductive film layer (111) is in the conductive film layer (111) and described to electrode structure (140) more than half is the laterally projecting edge (121) more than the insulating layer (120) of amplitude for vertical range between, and Wherein 90% or more in the membrane structure (110) is applied to when the diaphragm area (113) of the conductive film layer (111) deviates Power by the conductive film layer (111) absorb.

2. film structural component according to claim 1, wherein described includes having insulation system (310) to electrode structure (140) Gap (220), and at least part of the wherein described insulation system (310) be arranged in it is described to electrode structure (140) At at least part of the wall portion (221) of the gap (220).

3. film structural component according to claim 2, wherein the second part of the insulation system (310) from described to electrode knot The conductive counter-electrode layer (141) of structure (140) extends vertically up in the cavity (150).

4. film structural component according to claim 2 or 3, wherein the material and the insulating layer of the insulation system (310) (120) material is different.

5. film structural component according to any one of claim 2 to 4, wherein the gap (220) are by the conductive counter-electrode Layer (141) is divided into first part and second part, and the wherein described first part and the second part are electrically insulated from each other.

6. film structural component according to claim 5, wherein the first part of the conductive counter-electrode layer (141) with contact Structure (250) connects, and the second part of the wherein described conductive counter-electrode layer (141) is that current potential is free.

7. film structural component according to any one of the preceding claims, wherein the bearing substrate (130) has gap (230), and the wherein described insulating layer (120) laterally surrounds the gap (230).

8. film structural component according to any one of the preceding claims, wherein in the film area of the conductive film layer (111) It is disposed with anti-sticking layer at the surface in domain (113).

9. film structural component according to claim 8, wherein the anti-sticking layer is perfluoro decyl trichlorosilane (FDTS) layer.

10. a kind of film structural component (300), including：

Membrane structure (110), the membrane structure include conductive film layer (111), wherein the conductive film layer (111) has suspension region (112) and diaphragm area (113), wherein the suspension region (112) of the conductive film layer (111) is arranged on insulating layer (120), and And the wherein described insulating layer (120) is arranged on bearing substrate (130)；And

To electrode structure (140), wherein described includes gap (220) to electrode structure (140), and wherein described to electrode It is vertically arranged between the conductive counter-electrode layer (141) of structure (140) and the diaphragm area (113) of the conductive film layer (111) to have Cavity (150)；And

The insulation system (310) to electrode structure (140), wherein the first part of the insulation system (310) is arranged in At at least part of the wall portion (221) in the gap (220) to electrode structure (140), and the wherein described insulation The second part of structure (310) extends vertically up in the cavity (150).

11. a kind of film structural component (400), including：

Membrane structure (110), the membrane structure include conductive film layer (111), wherein the conductive film layer (111) includes first conductive Material, wherein the conductive film layer (111) has suspension region (112) and diaphragm area (113), wherein the conductive film layer (111) suspension region (112) is arranged on insulating layer (120), and the wherein described insulating layer (120) is arranged in bearing substrate (130) on；And

With conductive counter-electrode layer (141) to electrode structure (140), wherein the conductive counter-electrode layer (141) includes second Conductive material, wherein it is described between electrode structure (140) and the diaphragm area (113) of the conductive film layer (111) vertically It is disposed with cavity (150), and wherein described first conductive material is different from second conductive material.

12. film structural component according to claim 11, wherein first conductive material is polysilicon, and wherein described Two conductive materials are at least one of metal and alloy.

13. a kind of method (500) being used to form film structural component, including：

The conductive film layer (111) that (510) membrane structure (110) is formed on insulating layer (120), wherein the conductive film layer (111) With suspension region (112) and diaphragm area (113), and the wherein described insulating layer (120) is arranged on bearing substrate (130)；

(520) are laterally formed at least in the region of the conductive film layer (111) to electrode structure (140)；And

(530) vertical cloth is formed between electrode structure (140) and the diaphragm area (113) of the conductive film layer (111) described The cavity (150) set, to which the cavity (150) vertically prolongs from the conductive counter-electrode layer (141) to electrode structure (140) Reach the diaphragm area (113) of the conductive film layer (111)；

The edge (114) of the wherein described conductive film layer (111) is in the conductive film layer (111) and described to electrode structure (140) vertical range between more than half the edges (121) of the insulating layer (120) is protruded past for amplitude.

14. according to the method for claim 13 (500), further including：

Second insulating layer (210) is formed in the membrane structure (110), wherein realizing shape in the second insulating layer (210) It is described to electrode structure (140) at (520)；And

Described to forming gap (220) in electrode structure (140), wherein the gap (220) pass perpendicularly through it is described to electrode Structure (140).

15. according to the method for claim 14 (500), wherein the gap (220) extend to the second insulating layer (210) in, and the wherein described gap (220) terminate at in such vertical range to electrode structure (140)：Institute State vertical range is less than the thickness of the second insulating layer (210) 75%.

16. the method (500) according to claims 14 or 15, wherein the gap (220) are by the conductive counter-electrode layer (141) it is divided at least two parts being electrically insulated from each other.

17. the method (500) according to any one of claim 14 to 16 further includes described to electrode structure (140) Gap (220) at least one wall portion (221) at formed third insulating layer (710).

18. according to the method for claim 17 (500), wherein the material of the second insulating layer (210) and the third The material of insulating layer (710) is different.

19. the method (500) according to claim 17 or 18 further includes partly removing the third insulating layer (710), So that the remainder of the third insulating layer (710) forms insulation system (310), wherein the insulation system (310) is extremely At at least part for the wall portion (221) that a few first part is arranged in the gap (220) to electrode structure (140).

20. the method (500) according to any one of claim 14 to 19 is wrapped wherein forming (530) described cavity (150) It includes：The second insulating layer (210) is laterally removed in the region of the diaphragm area (113) of the conductive film layer (111), and Wherein during formation (530) cavity (150), the conductive film layer (111) is formed above the insulating layer (120) Laterally projecting portion.

21. the method (500) according to any one of claim 13 to 20, further includes that the conductive film layer is collectively formed (111) the first contact structures (240) at suspension region (112) and the second contact at the conductive counter-electrode layer (141) Structure (250).