CN105668500B - High-sensitivity wide-range force sensor and manufacturing method thereof - Google Patents
High-sensitivity wide-range force sensor and manufacturing method thereof Download PDFInfo
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- CN105668500B CN105668500B CN201610034473.2A CN201610034473A CN105668500B CN 105668500 B CN105668500 B CN 105668500B CN 201610034473 A CN201610034473 A CN 201610034473A CN 105668500 B CN105668500 B CN 105668500B
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- silicon
- lower floor
- substrate
- pressure drag
- thin film
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0037—For increasing stroke, i.e. achieve large displacement of actuated parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/007—For controlling stiffness, e.g. ribs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00658—Treatments for improving the stiffness of a vibrating element
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
Abstract
The invention discloses a high-sensitivity wide-range force sensor and a manufacturing method thereof. The sensor comprises a substrate (1), a lower-layer silicon cantilever beam (2), an upper-layer silicon thin film (3), a first dielectric layer (41), second dielectric layers (42), a first piezoresistor (51), a second piezoresistor (52), a first outgoing guide line (61) and a second outgoing guide line (62), wherein the first outgoing guide line (61) and the second outgoing guide line (62) are outgoing lines of the first piezoresistor (51) and the second piezoresistor (52); the substrate (1) is hollow, the lower-layer silicon cantilever beam (2) is located in a hollow area of an upper surface of the center of the substrate (1), and the surface of the lower-layer silicon cantilever beam (2) is level with the upper surface of the substrate (1), one end of the lower-layer silicon cantilever beam (2) is connected with the substrate (1), and the other end of the lower-layer silicon cantilever beam (2) is suspended. The sensor provided by the invention has high sensitivity under the action of a small force, and also has a wide measurement range. The whole process of the manufacturing method of the sensor is simple.
Description
Technical field
A kind of a kind of the present invention relates to force transducer, it particularly relates to the pressure resistance type power sensing of High-sensitivity wide-range
Device and its manufacture method.
Background technology
In the micro mechanical device manufactured using semi-conducting material and MEMS technology, force transducer develops more ripe
One class.At present, force transducer has been widely used for the fields such as Industry Control, biology, medical treatment.MEMS force transducers press its work
Principle is broadly divided into piezoresistive force sensor, capacitive force transducer etc., and the force transducer of main flow is still pressure on the market at present
Resistive.Although piezoresistive force sensor is because measuring deformation using piezoresistive effect, with certain temperature effects, need using certain
Temperature-compensating mechanism, but its simple structure, sensitivity is high, the linearity is good, be easily integrated and measure and facilitate, and is still current master
Want application principle.The measurement range and precision of force transducer generally can not be taken into account very well, especially in wind pressure measurement field, blast
Size and wind speed square are directly proportional, therefore need sensor to have very high sensitivity during little wind, and while must also have very
Wide measurement range.Therefore design takes into account sensitivity and the power test structure of measurement range is very necessary.
The content of the invention：
Technical problem：The present invention proposes a kind of with higher sensitivity and with the High-sensitivity wide-range compared with wide-range
Force transducer and its manufacture method.
The content of the invention：For solving above-mentioned technical problem, the invention provides a kind of High-sensitivity wide-range force transducer, should
Sensor includes substrate, lower floor's silicon cantilever, upper strata silicon thin film, first medium layer and second dielectric layer, the first pressure drag and second
Pressure drag, and the first wire of extraction and second extraction wire of the first pressure drag and the second pressure drag；Wherein,
Substrate is hollow, and lower floor's silicon beam is located in substrate center upper surface hollow region, and surface and substrate top surface are flushed,
Lower floor's silicon beam one end and substrate connection, another section hanging；
The embedded lower floor's silicon beam of second pressure drag and substrate top surface junction, surface and lower floor's silicon beam are flushed；Upper strata silicon thin film
In cantilever design, its fixed area passes through first medium layer and substrate connects, and be secured to region connection is suspension region；The
One pressure drag is embedded between its fixed area and suspension region, is flushed with upper strata silicon thin film；The suspension region that upper strata silicon thin film is constituted
Have overlapping with lower floor silicon beam, and have the gap with first medium layer same thickness；Second dielectric layer covers upper strata silicon thin film with
The upper surface of layer silicon beam and substrate, the first lead and the second lead are located at second medium layer surface, are the first pressure drag and the respectively
The lead-out wire of two pressure drags.
Preferably, its lower floor's silicon cantilever is different with the power sensitive beam rigidity of upper strata silicon thin film, and upper strata silicon thin film power is sensitive
Beam is rigidly less than lower floor's silicon cantilever sensitive beam rigidity.
Preferably, there is gap between lower floor's silicon cantilever and upper strata silicon thin film, its gap width is equal to first medium layer
Thickness.
Present invention also offers a kind of manufacture method of High-sensitivity wide-range force transducer, the method includes following step
Suddenly：
Step 1：The N-type soi wafer for selecting substrate to be crystal orientation, removes partial SOI by reactive ion etching etching technics
Silicon membrane layer and corresponding silicon oxide first medium layer above silicon chip, forms upper strata silicon thin film and exposes lower floor's silicon substrate 1；
Step 2：Then with photoresist as mask, photoetching and with ion implantation technology injection boron ion formed the first pressure drag and
Second pressure drag simultaneously removes photoresist；
Step 3：The lower 950 DEG C of annealing of nitrogen atmosphere, and thermal oxide forms second dielectric layer；
Step 4：Photoetching simultaneously goes out the fairlead of the first pressure drag and the second pressure drag part with hf etching, using magnetron sputtering
Deposit metallic aluminium and etching forms the first lead of pressure drag and the second lead；
Step 5：Substrate silicon is corroded to certain thickness from the back side using tetramethyl aqua ammonia；
Step 6：Back side photoetching simultaneously etches the lower floor's silicon in silicon groove with deep reaction ion etching technique, forms lower floor's silicon cantilever
Beam；
Step 7：Front is protected with glue, using Fluohydric acid. wet etching from the back side by lower floor's silicon cantilever and upper strata silicon thin film
Power sensitive beam separates release, and since then, the manufacturing process of this sensor is completed.
Beneficial effect：1) Sensitivity in Pressure Sensors and range are realized using the presser sensor beam of two different sensitivities
Optimization so that the force transducer low power effect under have higher sensitivity while with wider range；2) work as the external world
When power is larger, the larger sensitive beam of lower rigid can be provided to top power sensitive beam and effectively be supported, it is ensured that sensor is tied
The reliability of structure；3) whole technique can be easily manufactured sensors with auxiliary electrode, process is simple with soi wafer.
Description of the drawings
Cross-sectional schematics of the Fig. 1 for present configuration.
Fig. 2 a are that front silicon fiml etching and piezo-resistive arrangement form schematic diagram.
Fig. 2 b are that front pressure drag lead forms schematic diagram.
Fig. 2 c are silicon back side deep etch schematic diagram.
Fig. 2 d are back side silicon cutting release and Facad structure release schematic diagram.
There is in two figures unified mark.Wherein：Substrate 1, lower floor's silicon cantilever 2, upper strata silicon thin film 3, first medium layer
41 and second dielectric layer 42, the first pressure drag 51 and the second pressure drag 52, and the extraction first of the first pressure drag 51 and the second pressure drag 52
Wire 61 and the second extraction wire 62.
Specific embodiment
The present invention will be further described below in conjunction with the accompanying drawings.
Invention proposes a kind of with higher sensitivity and with the piezoresistive force sensor structure compared with wide-range.The sensing
Device is made using soi wafer, the sensitive knot of power for having higher sensitivity but range narrower using the upper layer of silicon film production of soi wafer
Structure；Made with compared with wide-range but the slightly lower power sensitive structure of sensitivity using body silicon, with reference to above-mentioned two different sensitivity and
The sensor construction of measurement range, has obtained a kind of having higher sensitivity and the force transducer compared with wide-range concurrently.The sensor institute
When survey external force is less, the highly sensitive structure in upper strata is bent downwardly, and lower floor's Wide measuring range sensitive structure keeps constant, now sensor
Output by the highly sensitive structures shape in upper strata；When institute's dynamometry reaches certain threshold value, upper strata sensitive structure force side is quick with lower floor
The stress end in contact of sense structure, now lower floor's sensitive structure start-up operation, while lower floor's sensitive structure also functions to stop effect, are protected
Shield upper strata beam is due to transshipping the infringement being likely to result in.
Force transducer proposed by the present invention is in order to have higher sensitivity and wider range concurrently, sensitive using two kinds of differences
The power sensitive structure sensing impressed pressure of degree.The schematic diagram of the sensor is as shown in Figure 1.
The sensor includes substrate 1, lower floor's silicon cantilever 2, upper strata silicon thin film 3, first medium layer 41 and second dielectric layer
42, the first pressure drag 51 and the second pressure drag 52, and first wire of extraction 61 and second of the first pressure drag 51 and the second pressure drag 52 draws
Go out wire 62；Wherein,
Substrate 1 is hollow, and lower floor's silicon beam 2 is in 1 center upper surface hollow region of substrate, and 1 upper surface of surface and substrate
Flush, 2 one end of lower floor silicon beam and substrate 1 connect, another section hanging；
Second pressure drag 52 is embedded in lower floor silicon beam 2 and 1 upper surface junction of substrate, and surface and lower floor silicon beam 2 are flushed；Upper layer of silicon
Thin film 3 is in cantilever design, and its fixed area passes through first medium layer 41 and substrate 1 connects, and be secured to region connection is outstanding
Floating region domain；First pressure drag 51 is embedded between its fixed area and suspension region, is flushed with upper strata silicon thin film 3；3 structure of upper strata silicon thin film
Into suspension region and lower floor silicon beam 2 have overlapping, and have the gap with 41 same thickness of first medium layer；Second dielectric layer 42 is covered
The upper surface of layer silicon thin film 3 and lower floor silicon beam 2 and substrate 1 is covered, the first lead 61 and the second lead 62 are located at second dielectric layer
42 surfaces, are the lead-out wire of the first pressure drag 51 and the second pressure drag 52 respectively.
Lower floor's silicon cantilever 2 is different with the power sensitive beam rigidity of upper strata silicon thin film 3,3 power sensitive beam rigidity of upper strata silicon thin film
Less than 2 sensitive beam rigidity of lower floor's silicon cantilever.
There is gap between lower floor's silicon cantilever 2 and upper strata silicon thin film 3, its gap width is equal to the thickness of first medium layer 41
Degree.
Present invention also offers a kind of manufacture method of High-sensitivity wide-range force transducer, the method includes following step
Suddenly：
Step 1：The N-type soi wafer for selecting substrate to be crystal orientation, removes partial SOI by reactive ion etching etching technics
Silicon membrane layer 3 and corresponding silicon oxide first medium layer 41 above silicon chip, forms upper strata silicon thin film 3 and exposes lower floor's silicon substrate
1；
Step 2：Then with photoresist as mask, photoetching simultaneously forms the first pressure drag 51 with ion implantation technology injection boron ion
With the second pressure drag 52 and remove photoresist；
Step 3：The lower 950 DEG C of annealing of nitrogen atmosphere, and thermal oxide forms second dielectric layer 42；
Step 4：Photoetching simultaneously goes out the fairlead of 52 part of the first pressure drag 51 and the second pressure drag with hf etching, using magnetic control
Sputtering deposit metallic aluminium and etching form pressure drag the first lead 61 and the second lead 62；
Step 5：Substrate silicon is corroded to certain thickness from the back side using tetramethyl aqua ammonia；
Step 6：Back side photoetching simultaneously etches the lower floor's silicon in silicon groove with deep reaction ion etching technique, forms lower floor's silicon cantilever
Beam 2；
Step 7：Front is protected with glue, will be lower floor's silicon cantilever 2 and upper layer of silicon thin from the back side using Fluohydric acid. wet etching
3 power sensitive beam of film separates release, and since then, the manufacturing process of this sensor is completed.
It is when the cantilever beam free end constituted to the sensor upper strata silicon fiml 3 imposes less pressure, curved under the beam stress,
Its Root Stress is concentrated simultaneously, and the resistance of the pressure drag 51 of root changes, by detecting its resistance or being accessed bridge survey
Amount voltage can reflect the size of institute's stress；When it is reinforced reach certain threshold value after, be that above-mentioned cantilever beam free end will be with lower floor
The pressure drag 52 for making 2 root of lower floor's beam is produced change by the free end in contact of silicon beam 2, impressed pressure, likewise, by detecting its electricity
Resistive is accessed the size that bridge measurement voltage can reflect institute's stress.Due to lower floor's beam 2 design rigidity it is larger, because
This its measurement range width, while also protect upper strata cantilever beam to receive to damage due to overload when acting on energetically.
The present invention is a kind of to have higher sensitivity and the piezoresistive force sensor compared with wide-range concurrently.By substrate 1, lower floor's silicon beam
2nd, upper strata silicon thin film 3, dielectric layer 41 and 42, pressure drag 51 and 52, and extraction wire 61 and 62 constitute.The sensor is provided with two not
It is with the power sensitive beam that rigidity and its free end are overlapped up and down, when there is external force to act in the sense beam of upper strata, upper or upper and lower two
Power sensitive beam can occur corresponding deformation, now can be applied on a sensor according to the change of the pressure drag of sensitive beam root
Pressure.
The manufacturing process of this sensor is：
1) select substrate for the N-type soi wafer of (100) crystal orientation, partial SOI is removed by reactive ion etching etching technics
Silicon membrane layer 3 and corresponding silicon oxide intermediate 41 above silicon chip, forms upper layer of silicon sensitive beam 3 and exposes lower floor's silicon substrate 1；
2) and then with photoresist as mask, photoetching simultaneously forms sensitive beam of exerting oneself with ion implantation technology injection boron ion
Pressure drag 51 and 52 simultaneously removes photoresist (Fig. 2 a)；
3) the lower 950 DEG C of annealing of nitrogen atmosphere, and thermal oxide forms oxidation insulating layer 42；
4) photoetching go out the fairlead of pressure drag 51 and 52 parts with hf etching, using magnetron sputtering deposit metallic aluminium simultaneously
Etching forms pressure drag lead 61 and 62 (Fig. 2 b)；
5) substrate silicon is corroded to certain thickness (Fig. 2 c) from the back side using tetramethyl aqua ammonia；
6) back side photoetching the lower floor's silicon in silicon groove is etched with deep reaction ion etching technique, form lower floor silicon beam 2；Front
Protected with glue, upper and lower two-layer power sensitive beam is separated from the back side by release (Fig. 2 d), since then, this sensing using Fluohydric acid. wet etching
The manufacturing process of device is basically completed.
Claims (4)
1. a kind of High-sensitivity wide-range force transducer, it is characterised in that the sensor includes substrate (1), lower floor's silicon cantilever
(2), upper strata silicon thin film (3), first medium layer (41) and second dielectric layer (42), the first pressure drag (51) and the second pressure drag (52),
And first pressure drag (51) and the second pressure drag (52) the first extraction wire of extraction (61) and the second extraction wire (62)；Wherein,
Substrate (1) is hollow, and lower floor's silicon cantilever (2) is located in substrate (1) center upper surface hollow region, and surface and substrate
(1) upper surface flush, lower floor's silicon cantilever (2) one end and substrate (1) connection, the other end are hanging；
Embedded lower floor's silicon cantilever (2) of second pressure drag (52) and substrate (1) upper surface junction, surface and lower floor's silicon cantilever
(2) flush；Upper strata silicon thin film (3) is in cantilever design, and its fixed area passes through first medium layer (41) and substrate (1) connects, with
Its fixed area connection is suspension region；First pressure drag (51) is embedded between its fixed area and suspension region, with upper layer of silicon
Thin film (3) is flushed；The suspension region and lower floor's silicon cantilever (2) that upper strata silicon thin film (3) is constituted has overlapping, and has and first medium
The gap of layer (41) same thickness；Second dielectric layer (42) covers upper strata silicon thin film (3) and lower floor's silicon cantilever (2) and substrate
(1) upper surface, the first extraction wire (61) and the second extraction wire (62) are located at second dielectric layer (42) surface, are the respectively
The lead-out wire of one pressure drag (51) and the second pressure drag (52).
2. High-sensitivity wide-range force transducer according to claim 1, it is characterised in that its lower floor's silicon cantilever (2)
Different with the power sensitive beam rigidity of upper strata silicon thin film (3), upper strata silicon thin film (3) power sensitive beam rigidity is less than lower floor's silicon cantilever
(2) power sensitive beam rigidity.
3. High-sensitivity wide-range force transducer according to claim 1 and 2, it is characterised in that lower floor's silicon cantilever (2)
There is gap and upper strata silicon thin film (3) between, its gap width is equal to the thickness of first medium layer (41).
4. a kind of manufacture method of High-sensitivity wide-range force transducer, it is characterised in that the method comprises the steps：
Step 1：The N-type soi wafer for selecting substrate to be crystal orientation, removes partial SOI silicon chip by reactive ion etching etching technics
The upper strata silicon thin film (3) and corresponding silicon oxide first medium layer (41) of top, forms upper strata silicon thin film (3) and exposes lower floor's silicon
Substrate (1)；
Step 2：Then with photoresist as mask, photoetching simultaneously forms the first pressure drag (51) with ion implantation technology injection boron ion
With the second pressure drag (52) and remove photoresist；
Step 3：The lower 950 DEG C of annealing of nitrogen atmosphere, and thermal oxide forms second dielectric layer (42)；
Step 4：Photoetching simultaneously goes out the fairlead of the first pressure drag (51) and the second pressure drag (52) part with hf etching, using magnetic control
Sputtering deposit metallic aluminium and etching form the first extraction wire of pressure drag (61) and the second extraction wire (62)；
Step 5：Substrate silicon is corroded to certain thickness from the back side using tetramethyl aqua ammonia；
Step 6：Back side photoetching simultaneously etches the lower floor's silicon in silicon groove with deep reaction ion etching technique, forms lower floor's silicon cantilever
(2)；
Step 7：Front is protected with glue, using Fluohydric acid. wet etching from the back side by lower floor's silicon cantilever (2) and upper strata silicon thin film
(3) power sensitive beam separates release, and since then, the manufacturing process of this sensor is completed.
Priority Applications (1)
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| CN201610034473.2A CN105668500B (en) | 2016-01-19 | 2016-01-19 | High-sensitivity wide-range force sensor and manufacturing method thereof |
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| CN201610034473.2A CN105668500B (en) | 2016-01-19 | 2016-01-19 | High-sensitivity wide-range force sensor and manufacturing method thereof |
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| CN105668500B true CN105668500B (en) | 2017-03-22 |
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| CN107892268B (en) * | 2017-11-13 | 2023-07-14 | 苏州敏芯微电子技术股份有限公司 | Pressure sensor and method for manufacturing the same |
| CN108426658B (en) * | 2018-03-26 | 2020-05-19 | 温州大学 | Ring contact high-range capacitance type micro-pressure sensor |
| CN110307919B (en) * | 2019-07-31 | 2024-01-19 | 中国电子科技集团公司第五十八研究所 | High-sensitivity wide-range capacitive force sensor and preparation method thereof |
| CN114354024B (en) * | 2022-03-17 | 2022-06-07 | 成都凯天电子股份有限公司 | High-sensitivity modal coupling type silicon resonance pressure sensor and pressure calculation method thereof |
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| US6797631B2 (en) * | 2001-08-07 | 2004-09-28 | Korea Institute Of Science And Technology | High sensitive micro-cantilever sensor and fabricating method thereof |
| CN1279362C (en) * | 2002-12-13 | 2006-10-11 | 中国科学院上海微系统与信息技术研究所 | Single chip integrated acceleration transducer of piezoresistance for micro girder construction in straight pull and vertical compression as well as its preparation method |
| CN1240994C (en) * | 2003-04-10 | 2006-02-08 | 北京大学 | Microcantilever sensor and its making method |
| CN100506686C (en) * | 2006-12-13 | 2009-07-01 | 清华大学 | Method for manufacturing piezoresistance type micro-cantilever beam sensor on SOI silicon sheet |
| CN103921171B (en) * | 2014-04-17 | 2016-04-06 | 西安交通大学 | A kind of wide range piezoresistance type high-frequency rings fixed four component Milling Force sensors |
| CN104237652B (en) * | 2014-09-03 | 2016-08-24 | 西安交通大学 | A kind of beam diaphragm structure high-voltage electrostatic field based on pressure-sensitive principle sensor chip |
| CN104536063B (en) * | 2015-01-16 | 2017-01-18 | 东南大学 | Piezoresistance sensitivity and capacitance sensitivity combined rain sensor structure |
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Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: Southeast University Address before: 210033 Xigang office, Qixia District, Nanjing, Jiangsu, No. 8, Qi Min Dong Road, Xingshan City, Patentee before: Southeast University |
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