CN105668500A - High-sensitivity wide-range force sensor and manufacturing method thereof - Google Patents

High-sensitivity wide-range force sensor and manufacturing method thereof Download PDF

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Publication number
CN105668500A
CN105668500A CN201610034473.2A CN201610034473A CN105668500A CN 105668500 A CN105668500 A CN 105668500A CN 201610034473 A CN201610034473 A CN 201610034473A CN 105668500 A CN105668500 A CN 105668500A
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silicon
substrate
floor
pressure drag
thin film
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CN201610034473.2A
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CN105668500B (en
Inventor
秦明
叶一舟
王芳
高磬雅
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Southeast University
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Southeast University
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021Transducers for transforming electrical into mechanical energy or vice versa
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0037For increasing stroke, i.e. achieve large displacement of actuated parts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067Mechanical properties
    • B81B3/007For controlling stiffness, e.g. ribs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015Cantilevers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065Mechanical properties
    • B81C1/00658Treatments for improving the stiffness of a vibrating element
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material

Abstract

The invention discloses a high-sensitivity wide-range force sensor and a manufacturing method thereof. The sensor comprises a substrate (1), a lower-layer silicon cantilever beam (2), an upper-layer silicon thin film (3), a first dielectric layer (41), second dielectric layers (42), a first piezoresistor (51), a second piezoresistor (52), a first outgoing guide line (61) and a second outgoing guide line (62), wherein the first outgoing guide line (61) and the second outgoing guide line (62) are outgoing lines of the first piezoresistor (51) and the second piezoresistor (52); the substrate (1) is hollow, the lower-layer silicon cantilever beam (2) is located in a hollow area of an upper surface of the center of the substrate (1), and the surface of the lower-layer silicon cantilever beam (2) is level with the upper surface of the substrate (1), one end of the lower-layer silicon cantilever beam (2) is connected with the substrate (1), and the other end of the lower-layer silicon cantilever beam (2) is suspended. The sensor provided by the invention has high sensitivity under the action of a small force, and also has a wide measurement range. The whole process of the manufacturing method of the sensor is simple.

Description

A kind of high sensitivity wide-range power sensor and manufacture method thereof
Technical field
The present invention relates to a kind of power sensor, specifically, relate to a kind of pressure resistance type power of high sensitivity wide-rangeSensor and manufacture method thereof.
Background technology
In the micro mechanical device that adopts semi-conducting material and MEMS technique to manufacture, power sensor is to develop comparativelyA ripe class. At present, power sensor has been widely used in the fields such as Industry Control, biology, medical treatment. MEMSPower sensor is mainly divided into piezoresistive force sensor, capacitive force transducer etc. by its operation principle, and current cityOn face, the power sensor of main flow is still pressure resistance type. Although piezoresistive force sensor is because adopting piezoresistive effect to measure shapeBecome, there is certain temperature effect, need to adopt certain temperature-compensating mechanism, but it is simple in structure, sensitiveSpend high, the linearity good, it is integrated to be easy to and it is convenient to measure, and is still current main application principle. Power sensorMeasurement category and precision can not finely be taken into account conventionally, especially in wind pressure measurement field, the size of blast and wind speedSquare be directly proportional, when therefore little wind, need sensor to have very high sensitivity, and also must have very wide simultaneouslyMeasurement category. Therefore to take into account the power test structure of sensitivity and measurement category very necessary in design.
Summary of the invention:
Technical problem: the present invention proposes and a kind ofly there is higher sensitivity and there is highly sensitive compared with wide-rangeDegree wide-range power sensor and manufacture method thereof.
Summary of the invention: for solving the problems of the technologies described above, the invention provides a kind of high sensitivity wide-range powerSensor, this sensor comprises substrate, lower floor's silicon cantilever, upper strata silicon thin film, first medium layer and second is situated betweenMatter layer, the first pressure drag and the second pressure drag, and first wire and second of drawing of the first pressure drag and the second pressure drag drawsGo out wire; Wherein,
Substrate hollow, lower floor's silicon beam is positioned at substrate center upper surface hollow region, and shows on surface and substrateFace flushes, and lower floor's silicon beam one end is connected with substrate, and another section unsettled;
The second pressure drag embeds lower floor's silicon beam and substrate top surface junction, and surface and lower floor's silicon beam flush; Upper strataSilicon thin film is cantilever design, and its FX is connected with substrate by first medium layer, connects with its FXWhat connect is suspension region; The first pressure drag is embedded between its FX and suspension region, neat with upper strata silicon thin filmFlat; The suspension region that upper strata silicon thin film forms and lower floor's silicon beam have overlapping, and have with first medium layer thick equallyThe gap of degree; Second medium layer covers the upper surface of upper strata silicon thin film and lower floor's silicon beam and substrate, the first lead-in wireBeing positioned at second medium layer surface with the second lead-in wire, is respectively the lead-out wire of the first pressure drag and the second pressure drag.
Preferably, the power sensitive beam rigidity of its lower floor's silicon cantilever and upper strata silicon thin film is different, upper strata silicon thin filmPower sensitive beam rigidity is less than lower floor's silicon cantilever sensitive beam rigidity.
Preferably, between lower floor's silicon cantilever and upper strata silicon thin film, have gap, its gap width equals firstThe thickness of dielectric layer.
The present invention also provides a kind of manufacture method of high sensitivity wide-range power sensor, the method comprise asLower step:
Step 1: select the N-type soi wafer that substrate is crystal orientation, remove by reactive ion etching etching technicsThe silicon membrane layer of partial SOI silicon chip top and corresponding silica first medium layer, form upper strata silicon thin film and revealGo out lower floor's silicon substrate 1;
Step 2: then taking photoresist as mask, photoetching also uses ion implantation technology B Implanted ion to form firstPressure drag and the second pressure drag also remove photoresist;
Step 3: the lower 950 DEG C of annealing of nitrogen atmosphere, and thermal oxide forms second medium layer;
Step 4: photoetching also goes out the fairlead of the first pressure drag and the second pressure drag part with hf etching, adopt magneticControl sputtering deposit metallic aluminium etching form pressure drag the first lead-in wire and the second lead-in wire;
Step 5: adopt tetramethyl aqua ammonia from back side corrosion substrate silicon to certain thickness;
Step 6: back side photoetching is also used the lower floor's silicon in deep reaction ion etching technique etch silicon groove, forms lower floorSilicon cantilever;
Step 7: glue protection for positive, adopt hydrofluoric acid wet etching from the back side by lower floor's silicon cantilever and upper strataSilicon thin film power sensitive beam separates and discharges, and since then, the manufacturing process of this sensor completes.
Beneficial effect: 1) utilize the presser sensor beam of two different sensitivity to realize pressure sensor spiritThe optimization of sensitivity and range, has in making this power sensor have higher sensitivity under low power effectWide range; 2), in the time that extraneous power is larger, the sensitive beam that below rigidity is larger can be carried top power sensitive beamFor effectively supporting, ensure the reliability of sensor construction; 3) whole technique can be passable with soi waferProduce easily sensors with auxiliary electrode were, technique is simple.
Brief description of the drawings
Fig. 1 is the cross-sectional schematic of structure of the present invention.
Fig. 2 a is that front silicon fiml etching and pressure drag structure form schematic diagram.
Fig. 2 b is that front pressure drag lead-in wire forms schematic diagram.
Fig. 2 c is silicon back side deep etch schematic diagram.
Fig. 2 d is that back side silicon cutting release and Facad structure discharge schematic diagram.
In two figure, there is unified mark. Wherein: substrate 1, lower floor's silicon cantilever 2, upper strata silicon thin film 3,First medium layer 41 and second medium layer 42, the first pressure drag 51 and the second pressure drag 52, and the first pressure drag 51Draw wire 62 with first wire 61 and second of drawing of the second pressure drag 52.
Detailed description of the invention
Below in conjunction with accompanying drawing, the present invention will be further described.
Invention has proposed a kind ofly to have higher sensitivity and have the piezoresistive force sensor structure compared with wide-range. ShouldSensor utilizes soi wafer to make, and utilizes the upper strata silicon fiml making of soi wafer to have higher sensitivity but rangeNarrower power sensitive structure; Utilize body silicon to make and have compared with wide-range but the slightly low power sensitive structure of sensitivity, knotClose and state the sensor construction of two different sensitivity and measurement category, obtained one have concurrently higher sensitivity andCompared with the power sensor of wide-range. When external force that this sensor is surveyed is less, the highly sensitive structure in upper strata is bent downwardly, underLayer Wide measuring range sensitive structure remains unchanged, and the now output of sensor is by the highly sensitive structures shape in upper strata; WhenWhen institute's dynamometry reaches certain threshold value, sensitive structure force side, upper strata contacts with the force side of lower floor's sensitive structure, thisTime lower floor sensitive structure start working, lower floor's sensitive structure also plays stop effect simultaneously, protection upper strata beam due toThe infringement that overload may cause.
The power sensor that the present invention proposes, in order to have higher sensitivity and wider range concurrently, utilizes two kinds of differencesThe power sensitive structure sensing impressed pressure of sensitivity. The schematic diagram of this sensor as shown in Figure 1.
This sensor comprises substrate 1, lower floor's silicon cantilever 2, upper strata silicon thin film 3, first medium layer 41 andSecond medium layer 42, the first pressure drag 51 and the second pressure drag 52, and the drawing of the first pressure drag 51 and the second pressure drag 52Go out the first wire 61 and second and draw wire 62; Wherein,
Substrate 1 hollow, lower floor's silicon beam 2 is positioned at substrate 1 center upper surface hollow region, and surface and liningThe end 1 upper surface flush, lower floor's silicon beam 2 one end are connected with substrate 1, and another section is unsettled;
The second pressure drag 52 embeds lower floor's silicon beam 2 and substrate 1 upper surface junction, surface and lower floor's silicon beam 2Flush; Upper strata silicon thin film 3 is cantilever design, and its FX is connected with substrate 1 by first medium layer 41,What be connected with its FX is suspension region; The first pressure drag 51 be embedded in its FX and suspension region itBetween, flush with upper strata silicon thin film 3; The suspension region that upper strata silicon thin film 3 forms and lower floor's silicon beam 2 have overlapping,And have and the gap of first medium layer 41 same thickness; Second medium layer 42 cover upper strata silicon thin film 3 and underThe upper surface of layer silicon beam 2 and substrate 1, the first lead-in wire 61 and the second lead-in wire 62 are positioned at second medium layer 42Surface is respectively the lead-out wire of the first pressure drag 51 and the second pressure drag 52.
The power sensitive beam rigidity of lower floor's silicon cantilever 2 and upper strata silicon thin film 3 is different, and silicon thin film 3 power in upper strata are quickSense beam rigidity is less than lower floor's silicon cantilever 2 sensitive beam rigidity.
Between lower floor's silicon cantilever 2 and upper strata silicon thin film 3, have gap, its gap width equals first mediumThe thickness of layer 41.
The present invention also provides a kind of manufacture method of high sensitivity wide-range power sensor, the method comprise asLower step:
Step 1: select the N-type soi wafer that substrate is crystal orientation, remove by reactive ion etching etching technicsThe silicon membrane layer 3 of partial SOI silicon chip top and corresponding silica first medium layer 41, form upper strata silicon thinFilm 3 also exposes lower floor's silicon substrate 1;
Step 2: then taking photoresist as mask, photoetching also uses ion implantation technology B Implanted ion to form firstPressure drag 51 and the second pressure drag 52 also remove photoresist;
Step 3: the lower 950 DEG C of annealing of nitrogen atmosphere, and thermal oxide forms second medium layer 42;
Step 4: photoetching also goes out the fairlead of the first pressure drag 51 and the second pressure drag 52 parts with hf etching,Adopt magnetron sputtering depositing metal aluminium etching to form pressure drag first and go between 61 and second lead-in wire 62;
Step 5: adopt tetramethyl aqua ammonia from back side corrosion substrate silicon to certain thickness;
Step 6: back side photoetching is also used the lower floor's silicon in deep reaction ion etching technique etch silicon groove, forms lower floorSilicon cantilever 2;
Step 7: glue protection for positive, adopt hydrofluoric acid wet etching from the back side by lower floor's silicon cantilever 2 andLayer silicon thin film 3 power sensitive beam separate and discharge, and since then, the manufacturing process of this sensor completes.
In the time that the cantilever beam free end that this sensor upper strata silicon fiml 3 is formed imposes less pressure, this beam stressLower curved, its Root Stress is concentrated simultaneously, and the resistance of the pressure drag 51 of root changes, by detecting its resistanceOr accessed bridge measurement voltage and can be reflected stressed size; When institute, reinforcing reaches after certain threshold value, isAbove-mentioned cantilever beam free end will contact with the free end of lower floor silicon beam 2, and impressed pressure will make lower floor's beam 2 rootsPressure drag 52 changes, same, passable by detecting its resistance variations or being accessed bridge measurement voltageReflect stressed size. The rigidity designing due to lower floor's beam 2 is larger, and therefore its measurement category is wide, also simultaneouslyProtection upper strata cantilever beam is subject to do energetically the used time can be because overload is damaged.
The present invention a kind ofly has higher sensitivity concurrently and compared with the piezoresistive force sensor of wide-range. By substrate 1, underLayer silicon beam 2, upper strata silicon thin film 3, dielectric layer 41 and 42, pressure drag 51 and 52 and draw wire 61 and 62Composition. This sensor is provided with two different rigidities and the upper and lower overlapping power sensitive beam of its free end, when there being outer masterpieceWhile being used in the sense beam of upper strata, can there is corresponding deformation in upper or upper and lower two power sensitive beam, according to sensitive beam rootThe pressure drag of portion changes can be now applied to the pressure on sensor.
The manufacturing process of this sensor is:
1) selecting substrate is the N-type soi wafer in (100) crystal orientation, goes by reactive ion etching etching technicsFall the silicon membrane layer 3 of partial SOI silicon chip top and corresponding silicon oxide intermediate 41, form upper strataSilicon-sensitive beam 3 also exposes lower floor's silicon substrate 1;
2) then taking photoresist as mask, photoetching and with ion implantation technology B Implanted ion form exert oneself quickThe pressure drag 51 of sense beam and 52 and remove photoresist that (Fig. 2 a);
3) the lower 950 DEG C of annealing of nitrogen atmosphere, and thermal oxide forms oxidation insulating layer 42;
4) photoetching go out the fairlead of pressure drag 51 and 52 parts with hf etching, adopts magnetron sputtering depositMetallic aluminium etching form pressure drag lead-in wire 61 and 62, and (Fig. 2 b);
5) to certain thickness, (Fig. 2 c) from back side corrosion substrate silicon to adopt tetramethyl aqua ammonia;
6) back side photoetching, also with the lower floor's silicon in deep reaction ion etching technique etch silicon groove, forms lower floor's silicon beam2; Positive with glue protection, adopt hydrofluoric acid wet etching to separate from the back side by upper and lower two-layer power sensitive beam(d), since then, the manufacturing process of this sensor completes Fig. 2 substantially in release.

Claims (4)

1. a high sensitivity wide-range power sensor, is characterized in that, this sensor comprises substrate (1),Lower floor's silicon cantilever (2), upper strata silicon thin film (3), first medium layer (41) and second medium layer (42),The first pressure drag (51) and the second pressure drag (52), and the drawing of the first pressure drag (51) and the second pressure drag (52)Go out the first wire (61) and second and draw wire (62); Wherein,
Substrate (1) hollow, lower floor's silicon beam (2) is positioned at substrate (1) center upper surface hollow region, andSurface and substrate (1) upper surface flush, lower floor's silicon beam (2) one end is connected with substrate (1), and another section is outstandingEmpty;
The second pressure drag (52) embed lower floor's silicon beam (2) and substrate (1) upper surface junction, surface with underLayer silicon beam (2) flushes; Upper strata silicon thin film (3) is cantilever design, and its FX is by first medium layer(41) be connected with substrate (1), what be connected with its FX is suspension region; The first pressure drag (51) embeddingBetween its FX and suspension region, flush with upper strata silicon thin film (3); Upper strata silicon thin film (3) structureBecome suspension region and lower floor's silicon beam (2) have overlapping, and have and first medium layer (41) same thickness betweenGap; Second medium layer (42) covers the upper of upper strata silicon thin film (3) and lower floor's silicon beam (2) and substrate (1)Surface, the first lead-in wire (61) and the second lead-in wire (62) are positioned at second medium layer (42) surface, are respectivelyThe lead-out wire of the first pressure drag (51) and the second pressure drag (52).
2. high sensitivity wide-range power sensor according to claim 1, is characterized in that its lower floorThe power sensitive beam rigidity of silicon cantilever (2) and upper strata silicon thin film (3) is different, and upper strata silicon thin film (3) power is quickSense beam rigidity is less than lower floor's silicon cantilever (2) sensitive beam rigidity.
3. high sensitivity wide-range power sensor according to claim 1 and 2, is characterized in that, underBetween layer silicon cantilever (2) and upper strata silicon thin film (3), have gap, its gap width equals first mediumThe thickness of layer (41).
4. a manufacture method for high sensitivity wide-range power sensor, is characterized in that, the method comprise asLower step:
Step 1: select the N-type soi wafer that substrate is crystal orientation, remove by reactive ion etching etching technicsThe silicon membrane layer (3) of partial SOI silicon chip top and corresponding silica first medium layer (41), in formationLayer silicon thin film (3) also exposes lower floor's silicon substrate 1;
Step 2: then taking photoresist as mask, photoetching also uses ion implantation technology B Implanted ion to form firstPressure drag (51) and the second pressure drag (52) also remove photoresist;
Step 3: the lower 950 DEG C of annealing of nitrogen atmosphere, and thermal oxide forms second medium layer (42);
Step 4: photoetching also goes out drawing of the first pressure drag (51) and the second pressure drag (52) part with hf etchingLine hole, adopts magnetron sputtering depositing metal aluminium etching formation pressure drag first to go between (61) and the second lead-in wire (62);
Step 5: adopt tetramethyl aqua ammonia from back side corrosion substrate silicon to certain thickness;
Step 6: back side photoetching is also used the lower floor's silicon in deep reaction ion etching technique etch silicon groove, forms lower floorSilicon cantilever (2);
Step 7: glue protection for positive, adopt hydrofluoric acid wet etching from the back side by lower floor's silicon cantilever (2)Separate release with upper strata silicon thin film (3) power sensitive beam, since then, the manufacturing process of this sensor completes.
CN201610034473.2A 2016-01-19 2016-01-19 High-sensitivity wide-range force sensor and manufacturing method thereof Expired - Fee Related CN105668500B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108426658A (en) * 2018-03-26 2018-08-21 温州大学 Ring contacts high range condenser type micropressure sensor

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US20030032293A1 (en) * 2001-08-07 2003-02-13 Korean Institute Of Science And Technology High sensitive micro-cantilever sensor and fabricating method thereof
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CN1536335A (en) * 2003-04-10 2004-10-13 北京大学 Microcantilever sensor and its making method
CN1970434A (en) * 2006-12-13 2007-05-30 清华大学 Method for manufacturing piezoresistance type microcantilever beam sensor on SOI silicon sheet
CN103921171A (en) * 2014-04-17 2014-07-16 西安交通大学 Wide-range piezoresistive high-frequency-response fixed type four-component milling force sensor
CN104237652A (en) * 2014-09-03 2014-12-24 西安交通大学 Beam membrane structure high-voltage electrostatic field sensor chip based on voltage-sensitive principle
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CN1415968A (en) * 2002-12-13 2003-05-07 中国科学院上海微系统与信息技术研究所 Single chip integrated acceleration transducer of piezoresistance for micro girder construction in straight pull and vertical compression as well as its preparation method
CN1536335A (en) * 2003-04-10 2004-10-13 北京大学 Microcantilever sensor and its making method
CN1970434A (en) * 2006-12-13 2007-05-30 清华大学 Method for manufacturing piezoresistance type microcantilever beam sensor on SOI silicon sheet
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CN104237652A (en) * 2014-09-03 2014-12-24 西安交通大学 Beam membrane structure high-voltage electrostatic field sensor chip based on voltage-sensitive principle
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108426658A (en) * 2018-03-26 2018-08-21 温州大学 Ring contacts high range condenser type micropressure sensor
CN108426658B (en) * 2018-03-26 2020-05-19 温州大学 Ring contact high-range capacitance type micro-pressure sensor

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Inventor after: Qin Ming

Inventor after: Ye Yizhou

Inventor after: Wang Fang

Inventor after: Gao Xinya

Inventor before: Qin Ming

Inventor before: Ye Yizhou

Inventor before: Wang Fang

Inventor before: Gao Qingya

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Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province

Patentee after: Southeast University

Address before: 210033 Xigang office, Qixia District, Nanjing, Jiangsu, No. 8, Qi Min Dong Road, Xingshan City,

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Granted publication date: 20170322

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