CN105428250B - A kind of method of ltcc substrate surface cavity planarization process - Google Patents
A kind of method of ltcc substrate surface cavity planarization process Download PDFInfo
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- CN105428250B CN105428250B CN201510832133.XA CN201510832133A CN105428250B CN 105428250 B CN105428250 B CN 105428250B CN 201510832133 A CN201510832133 A CN 201510832133A CN 105428250 B CN105428250 B CN 105428250B
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- dry film
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- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000741 silica gel Substances 0.000 claims abstract description 36
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 36
- 239000011241 protective layer Substances 0.000 claims abstract description 27
- 239000000945 filler Substances 0.000 claims abstract description 11
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 11
- 238000011161 development Methods 0.000 claims abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 70
- 239000010409 thin film Substances 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005457 optimization Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 description 18
- 238000011049 filling Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000010931 gold Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 239000003292 glue Substances 0.000 description 7
- 238000004026 adhesive bonding Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 238000012822 chemical development Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001935 peptisation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229920001059 synthetic polymer Polymers 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
Landscapes
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
The present invention relates to LTCC, film and electric hybrid board manufacturing technology field; the invention discloses a kind of method of the cavity planarization process when ltcc substrate surface makes thin film circuit; it is specifically included Step 1: photo-conductive film is overlayed on the ltcc substrate surface containing cavity; it is set to cover the cavity area of substrate and plane domain; overall exposing and development are carried out to photo-conductive film surface again; so that the photo-conductive film dissolving at cavity area edge; the dry film of whole cavity area comes off, and the dry film of non-cavity area forms dry film protective layer；Step 2: silica gel colloidal sol is struck off unnecessary silica gel after standing coated on dry film protective layer and in cavity, baking-curing silica gel in baking oven is put into after standing again, forms silicone filler block；Step 3: ltcc substrate entirety magnetron sputtering Au film layers.Because cavity body structure influences to be eliminated, ltcc substrate surface can be directly integrated high-precision thin film circuit, and design universality is improved, and has obvious optimization for the product line of multi-varieties and small-batch.
Description
Technical field
The present invention relates to LTCC（LTCC）, film and electric hybrid board manufacturing technology field, be specifically one kind
The method of cavity planarization process during the making thin film circuit of ltcc substrate surface, using this method so that substrate surface planarizes
To integrate high-precision thin film circuit in substrate surface.
Background technology
High-precision thin film circuit figure is made on traditional ltcc substrate surface（Hereinafter referred to as LTCC-D）Technique in, due to
The presence of LTCC cavitys, gluing uniformity is on the one hand have impact on, so that thin film circuit band line precision is affected, on the other hand
The prefabricated printed circuit of its own bottom also faces chemical compatibility problems.To avoid the influence of cavity, existing exemplar uses more
Without cavity design, so as to cause LTCC-D circuit applications to be restricted.
Now LTCC-D products are mainly derived from the companies such as European KERAMIS projects, IBM in the industry, and such circuit is for spy
Different Project design, market are outflowed without goods shelf productses.Because major manufacturer takes technique secrecy provision, disclosure is had not seen
Method on the high-precision surface thin film circuit graphic making of ltcc substrate containing cavity.
CN201410409113.7 discloses a kind of preparation method of ltcc substrate high-precision surface resistance, it is characterised in that
Comprise the following steps：(1) surface of multilayer ltcc substrate is ground and polished；(2) the LTCC bases treated to step (1)
Plate is cleaned with acetone and ethanol respectively successively, does drying and processing afterwards；(3) ltcc substrate after step (2) processing is taken
Go out, fill the cavity on ltcc substrate with photoresist, do drying and processing afterwards；(4) ltcc substrate after step (3) processing is taken
Go out, produce the exposed photoetching offset plate figure in resistance position on ltcc substrate surface with photoresist；(5) by after step (4) processing
Ltcc substrate is sent into magnetic control platform, sputters tantalum nitride film layer；(6) ltcc substrate after step (5) processing is heated
Baking, places into stripping photoresist in acetone, cleans afterwards and drying and processing；(7) by the ltcc substrate after step (6) processing
It is sent into magnetic control platform, sputters titanium tungsten-nickel-golden membranous layer；(8) ltcc substrate after step (7) processing is taken out, uses photoetching
Cavity on glue filling ltcc substrate, does drying and processing afterwards；(9) ltcc substrate after step (8) processing is taken out, uses photoetching
Glue produces the exposed photoetching offset plate figure of electrode area on ltcc substrate surface；(10) ltcc substrate after step (9) is handled,
The progress gold-plated thickening of electrode area in gold plating liquid is put into, cleans afterwards and drying is handled；(11) by after step (10) processing
Ltcc substrate carries out processing of removing photoresist；(12) position beyond the ltcc substrate Top electrode after step (11) processing is carried out successively wet
Fa Kejin, wet method carve nickel and wet method carves titanium tungsten；(13) ltcc substrate after step (12) processing is made annealing treatment；(14) it is right
Ltcc substrate after step (13) processing carries out sheet resistance resistance measurement.Complete the preparation of ltcc substrate sheet resistance.This is special
Profit, specifically using in the cavity that photoresist is injected on ltcc substrate with syringe first, and makes in cavity fill part
The surface of photoresist is concordant with the holding of ltcc substrate surface, and ltcc substrate is placed on hot plate and carries out drying and processing；Then with even
Spin coating photoresist on the ltcc substrate of glue machine after treatment.
The patent similar approach is once used in research in 11 years initial stage, but can only to carry out depth extremely shallow for photoresist fill process
（Below 0.4mm）, area is minimum（Below 3x3mm）Cavity filling.Because containing a large amount of organic molten before photoresist drying
Agent, volume will drastically shrink after drying, can not realize smooth filling.
When small and shallow in cavity, photoetching gluing method can slightly flatten cavity, but also be simply possible to use in make precision 100 ±
More than 10um resistance, and high-precision conduction band can not be realized（20±2um）.This method is at all without available actually in engineering
Property.
The content of the invention
The technology that influence gluing uniformity for cavity of the prior art be present asks that the invention discloses a kind of LTCC bases
The method of plate surface cavity planarization process.
Technical scheme is as follows：
The invention discloses a kind of method of ltcc substrate surface cavity planarization process, it specifically includes following step
Suddenly：
Step 1: photo-conductive film, which is overlayed, on the ltcc substrate surface containing cavity, makes it cover the cavity area of substrate
And plane domain, then overall exposing and development are carried out to photo-conductive film surface so that the photo-conductive film dissolving at cavity area edge,
The dry film of whole cavity area comes off, and the dry film of non-cavity area forms dry film protective layer；Step 2: silica gel colloidal sol is coated in
On dry film protective layer and in cavity, unnecessary silica gel is struck off after standing, is put into baking oven and is toasted admittedly after standing again
SiClx glue, form silicone filler block；Step 3: removing dry film protective layer using organic solution, then dry film protective layer is being removed
Substrate surface afterwards integrally deposits continuous Au golden films.Realize that planarization is uniform so as to improve photoresist spin coating by this method
Property, to make high-precision thin film circuit, dry film is selected first as protecting and directly exposing shaping, then selects silica gel to carry out
Filling realizes that structure planarizes, and redeposited continuous Au golden films are to eliminate surface differential, so as to realize making thin-film electro
Cavity planarization process during road, using this method so that substrate surface is planarized to integrate high-precision film in substrate surface
Circuit.
Further, above-mentioned exposed and developed using exposure machine progress, exposure wavelength can be with 340nm-480nm.Using
Exposure machine is realized, more efficient, and operation is simpler.The wavelength is dry film wavelength photoreceptor.
Further, the above-mentioned method for striking off unnecessary silica gel is to be close to dry film protective layer by unnecessary silica gel using scraper
Strike off, struck off using scraper or equivalent way.
Further, above-mentioned organic solution is acetone.
Further, above-mentioned Au golden films realize overall deposition using magnetron sputtering apparatus.
Technical scheme more than, beneficial effects of the present invention are：Silicone filler shrinks very little, it is possible to achieve flat
Whole filling, completely eliminate cavity influence.Based on this, we eliminate the problems such as its pollution and surface tension, realize
Integrated artistic.Substrate surface is planarized using silicone filler, having avoided cavity sunk structure influences gluing uniformity, so as to shadow
The problem of ringing thin film circuit band line precision, ensure that LTCC-D band line precision is better than 20 ± 2 μm, improve circuit performance；Due to chamber
Body structure no longer influences processing technology, and design universality is improved, and has obvious optimization for the product line of multi-varieties and small-batch.
Protected without mask direct forming dry film, reduce production cost, also improve production efficiency, while eliminate and fill by Au films
The physical difference of block and substrate surface, band line precision is set to meet to require.
Brief description of the drawings
Fig. 1 is the ltcc substrate containing cavity body structure of the present invention.
Fig. 2 is to overlay the ltcc substrate after photo-conductive film.
Fig. 3 show the ltcc substrate after forming photo-conductive film protective layer.
Fig. 4 show the signal of silicone filler method.
Fig. 5 show the ltcc substrate after silicone filler planarization.
Fig. 6 forms the continuous, ltcc substrate of flat surface after showing thin film sputtering metallization.
Embodiment
With reference to Figure of description, embodiment of the invention is described in detail.
The invention discloses a kind of method of ltcc substrate surface cavity planarization process, it specifically includes following step
Suddenly：
Step 1: photo-conductive film, which is overlayed, on the ltcc substrate surface containing cavity, makes it cover the cavity area of substrate
And plane domain, then overall exposing and development are carried out to photo-conductive film surface so that the photo-conductive film dissolving at cavity area edge,
The dry film of whole cavity area comes off, and the dry film of non-cavity area forms dry film protective layer.Dry film（Dry film）It is being relative
Wet film（Wet film）For, dry film is a kind of high molecular compound, by producing polymerisation after ultraviolet irradiation
（By the course of reaction of monomer synthetic polymer）Form a kind of material of stabilization and be attached to ltcc substrate surface.Due to overlaying process
The edge of middle cavity can by certain level pulling force, therefore at this photo-conductive film significantly drawn it is thin, can be straight in developing process
Dissolving is connect, the dry film of cavity area is come off, is easy to subsequently carry out silicone filler.The photo-conductive film covering remained is all non-
Cavity area 3-2, protective layer 4-2 is formd, isolate substrate surface 4-1 and silica gel colloidal sol 4-3.
Step 2: silica gel colloidal sol is struck off unnecessary silica gel after standing coated on dry film protective layer and in cavity, pass through
Cross after standing again and be put into baking-curing silica gel in baking oven, form silicone filler block.After the completion of prepared by dry film protective layer, modulation
Silica gel colloidal sol carries out filling out chamber.Silica gel colloidal sol is coated in dry film protective layer and cavity, after standing 30s, is close to dry film using scraper
Protective layer strikes off unnecessary silica gel.After striking off silica gel, standing substrate 30min discharges bubble in silica gel colloidal sol, is then placed in 60
Baking 120min solidification silica gel, forms silicone filler block, so as to obtain smooth substrate surface, and separate cavities simultaneously in DEG C baking oven
Body bottom printed circuit, solve chemical compatibility problems.
Step 3: removing dry film protective layer using organic solution, organic solution such as acetone or other equivalent effects have
Machine solution removes dry film protective layer, to carry out subsequent technique.Then continuous Au golden films are integrally deposited in substrate surface, such as
Continuous Au films can integrally be deposited in substrate surface by using magnetron sputtering or equivalent of the apparatus, to eliminate filling block and substrate
Surface physics difference.
Further, above-mentioned exposed and developed using exposure machine progress, exposure wavelength can be 340nm-480nm, should
Wavelength is the wavelength photoreceptor of photo-conductive film.
The time that above-mentioned first time stands is 30s, and second of the time stood is 30min.More than 30s is stood for the first time,
Second of standing more than 30min.The purpose stood for the first time is silica gel is fully flowed, and second of purpose stood is discharge glue
Internal bubble.Determined by test of many times, the combination of both time of repose make it that the filling effect of silica gel is best.
Further, the above-mentioned method for striking off unnecessary silica gel is to be close to dry film protective layer by unnecessary silica gel using scraper
Strike off.It can certainly be struck off using other equivalent ways.
Temperature in above-mentioned baking oven is 60 DEG C, baking time 120min.Temperature can be 55-70 DEG C, and the time can be
120-240min.Determined by test of many times, 60 DEG C of+120min of combination of both temperature and times cause the solidification of silica gel to imitate
Fruit is best.Otherwise the possible season cracking of silica gel, influences flatness.
Photo-conductive film is overlayed in the upper surface of ltcc substrate containing chamber 1 first with hot roll unit, it is covered substrate chamber
Body region 1-1 and plane domain 1-2.Reuse exposure machine（Exposure wavelength 340nm）Overall exposing is carried out to photo-conductive film surface 2
And development.Due to during overlaying at cavity edge 2-1 by certain level pulling force, photo-conductive film is significantly drawn thin at this,
It can directly be dissolved in developing process, cavity area 3-1 dry films is come off（Dry film forms stable compound, but its after being exposed
Still there is certain dissolubility in developer solution.The dry film at cavity seamed edge edge drawn it is thin after, thickness is far smaller than other regions, aobvious
Dissolution time is very short in shadow liquid, so that the dry film of covering cavity portion integrally disconnects, come off.Dry film come off after without adhesiveness,
It can be removed simply by flushing or air-blowing.This is a kind of simplified technique of the innovation of this patent, can chemical development formation institute
Protective layer is needed, the step of eliminating using mask to developing again after cavity progress graph exposure）, it is easy to subsequently to carry out silica gel to fill out
Fill.The photo-conductive film remained covers all non-cavity area 3-2, forms protective layer 4-2, makes substrate surface 4-1 and silicon
Peptization glue 4-3 isolates.
After the completion of prepared by dry film protective layer, modulation silica gel colloidal sol carries out filling out chamber.Silica gel colloidal sol 4-3 is protected coated in dry film
On layer 4-3 and cavity 4-4, after standing 30s, it is close to dry film protective layer 4-3 using scraper 4-5 and strikes off unnecessary silica gel.Strike off silicon
After glue, standing substrate 30min discharges bubble in silica gel colloidal sol, is then placed in baking 120min solidification silica gel in 60 DEG C of baking ovens,
Silicone filler block 5-1 is formed, so as to obtain smooth substrate surface, and isolated chambers bottom printed circuit 5-2 simultaneously, solutionization
Learn compatibility issue.Finally, dry film protective layer 4-3 is removed using acetone or equivalent organic solution, to carry out subsequent technique.
Because silica gel and ltcc substrate surface differential are larger, the smooth rear film technique gluing uniformity of substrate surface is still
It can be affected, prevent band line precision from meeting to require.Therefore, magnetron sputtering or equivalent of the apparatus need to be used overall in substrate surface
Continuous Au films 6 are deposited, eliminate filling block 6-1 and substrate surface 6-2 physical differences.
The coefficient and parameter gone out given in the above embodiments, it is available to those skilled in the art to realize or use
Invention, invention, which does not limit, only takes foregoing disclosed numerical value, in the case where not departing from the thought of invention, the technology of this area
Personnel can make various modifications or adjustment to above-described embodiment, thus the protection domain invented is not by above-described embodiment institute
Limit, and should be the maximum magnitude for meeting the inventive features that claims are mentioned.
Claims (5)
1. a kind of method of ltcc substrate surface cavity planarization process, it specifically includes following step：Step 1: will be photosensitive
Dry film, which overlays, on the ltcc substrate surface containing cavity, makes it cover the cavity area of substrate and plane domain, then to photothermographic dry
Film surface carries out overall exposing and development so that the photo-conductive film dissolving at cavity seamed edge edge, the dry film of whole cavity area take off
Fall, the dry film of non-cavity area forms dry film protective layer；Step 2: by silica gel colloidal sol coated on dry film protective layer and cavity
It is interior, unnecessary silica gel is struck off after standing, baking-curing silica gel in baking oven is put into after standing again, forms silicone filler
Block；Step 3: removing dry film protective layer using organic solution, then the substrate surface after dry film protective layer is removed integrally deposits
Continuous Au golden films.
2. the method for ltcc substrate surface cavity planarization process as claimed in claim 1, it is characterised in that it is described exposure and
Development is carried out using exposure machine.
3. the method for ltcc substrate surface cavity planarization process as claimed in claim 1, it is characterised in that it is described will be unnecessary
The method that silica gel strikes off strikes off unnecessary silica gel to be close to dry film protective layer using scraper.
4. the method for ltcc substrate surface cavity planarization process as claimed in claim 1, it is characterised in that described organic molten
Liquid is acetone.
5. the method for ltcc substrate surface cavity planarization process as claimed in claim 1, it is characterised in that the Au golden films
Overall deposition is realized using magnetron sputtering apparatus.
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| CN201510832133.XA CN105428250B (en) | 2015-11-25 | 2015-11-25 | A kind of method of ltcc substrate surface cavity planarization process |
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| CN111128902A (en) * | 2019-12-30 | 2020-05-08 | 中国电子科技集团公司第五十四研究所 | Temporary filling mixed glue for LTCC substrate cavity and filling method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123227A (en) * | 2006-08-08 | 2008-02-13 | 台达电子工业股份有限公司 | Luminescent and heat radiation device and its encapsulation making method |
| CN101211903A (en) * | 2006-12-29 | 2008-07-02 | 育霈科技股份有限公司 | RF module package structure and its forming method |
| CN101727022A (en) * | 2008-10-22 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method of photosensitive dry film |
| CN104217831A (en) * | 2014-08-19 | 2014-12-17 | 中国电子科技集团公司第五十四研究所 | Preparation method for high-precision resister on LTCC base-plate surface |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123227A (en) * | 2006-08-08 | 2008-02-13 | 台达电子工业股份有限公司 | Luminescent and heat radiation device and its encapsulation making method |
| CN101211903A (en) * | 2006-12-29 | 2008-07-02 | 育霈科技股份有限公司 | RF module package structure and its forming method |
| CN101727022A (en) * | 2008-10-22 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method of photosensitive dry film |
| CN104217831A (en) * | 2014-08-19 | 2014-12-17 | 中国电子科技集团公司第五十四研究所 | Preparation method for high-precision resister on LTCC base-plate surface |
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