CN104317173B - A method of improving stripping technology yield rate - Google Patents
A method of improving stripping technology yield rate Download PDFInfo
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- CN104317173B CN104317173B CN201410648800.4A CN201410648800A CN104317173B CN 104317173 B CN104317173 B CN 104317173B CN 201410648800 A CN201410648800 A CN 201410648800A CN 104317173 B CN104317173 B CN 104317173B
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Abstract
The embodiment of the invention discloses a kind of methods for improving stripping technology yield rate, including photoresist is coated in substrate；The coating photoresist on the substrate is exposed, the figure for the negative bevel out of developing on the photoresist；The surface deposition metal layer of the photoresist retained in the substrate after development and the substrate exposed after the figure of negative bevel out that develops；Adhesive film is covered on the metal layer；The mode for opening the adhesive film along preset direction removes the metal layer of the surface attachment of the photoresist；The photoresist is removed.The method provided by the present invention for improving stripping technology yield rate can simply and effectively remove the metal layer on photoresist surface, and yield rate is significantly improved.
Description
Technical field
The present invention relates to photoetching process fields, more particularly to a kind of method for improving stripping technology yield rate.
Background technique
With the progress of semiconductor technology, its corresponding Product Process is also evolving, and stripping technology is exactly wherein
A kind of important Photolithography Technology.
Photoetching is processing and manufacturing one of integrated circuit pattern structure and the critical process of micro-structure.So-called photoetching is exactly benefit
Photochemical reaction occurs with photosensitive etch-resistant coating, prepares the figure to meet the requirements on various films or silicon in conjunction with caustic solution
Shape, to realize the purpose of making various circuit elements, selection doping, forming metal electrode and wiring.
Photoresist used in photoetching process, which is called, makees photoresist, is by light-sensitive compound, matrix resin and organic
The colloidal liquid that solvent etc. is mixed, after effect of light by specific wavelength, chemical structure changes, and causes light
Photoresist can dissolve in specific solution.
In a lithographic process, a kind of technique instead of lithographic method is stripping technology, that is, our Lift- for saying
off.It in stripping technology, first has to form litho pattern, then deposition film, finally removes photoresist with chemical reagent, this
The unwanted film of Shi Liantong can remove together.
However, if substrate surface has step, negative bevel is made in step large area in above-mentioned stripping technology, that
Stepped area photoresist thickness can be partially thin, in exposure process partially thin photoresist region will overexposure, after leading to development
Oblique angle becomes smaller；Secondly, step part diffusing reflection is bigger than plane when stepped area exposes, negative bevel becomes smaller after will also result in development.
It is connected after will cause Metal deposition in this way in photoresist side formation sheet metal, when impregnating removal photoresist due to soak
It cannot contact and react with photoresist, will result in the sordid problem of metal removal, to reduce stripping technology product
Yield rate.
Therefore, how to ensure that soak can be contacted with photoresist to react, clean removal photoresist, thus effectively
Ground solves the problems, such as metal residual, is a technical problem that technical personnel in the field need to solve at present.
Summary of the invention
The object of the present invention is to provide a kind of methods for improving stripping technology yield rate, can effectively solve photoresist surface
Metal residual problem, so that the yield rate of technique be made to be significantly improved.
In order to solve the above technical problems, the present invention provides the following technical scheme that
A method of stripping technology yield rate is improved, including coats photoresist in substrate；To coated in the substrate
On photoresist be exposed, the figure for the negative bevel out of developing on the photoresist；Retain in the substrate after development
The surface deposition metal layer of the substrate exposed after photoresist and the figure of negative bevel out that develops；Covering is viscous on the metal layer
Pad pasting；The mode for opening the adhesive film along preset direction removes the metal layer of the surface attachment of the photoresist；By the light
Photoresist removes.
Preferably, adhesive film is covered on the metal layer for being located at the photoresist side.
Preferably, adhesive film is covered on all metal layers of deposit.
It is preferably, described that open the adhesive film along preset direction include: to open the adhesive film in one direction.
It is preferably, described that open the adhesive film along preset direction include: to open the adhesive film from edge to centre.
Preferably, the adhesive film is blue film.
Preferably, the blue film is the blue film of electron level.
Preferably, the substrate is to have the substrate of step.
Preferably, the photoresist thickness is 2-3 times of metal layer thickness, including endpoint value.
Compared with prior art, above-mentioned technical proposal has the advantage that
The method that stripping technology yield rate is improved provided by the embodiment of the present invention, covers adhesive film on the metal layer, and
Adhesive film is opened along preset direction to paste the metal layer on removal photoresist surface, since stickup film quality is soft and pastes removal light
Dynamics is moderate when the metal layer on photoresist surface, so removing the metal on photoresist surface using adhesive film.In addition, along default side
To adhesive film is opened, substrate and metal layer Impact direction are fixed, and stress is also just more stable, thus, effectively removing photoresist
When the metal layer on surface, substrate will not be damaged because substrate is frangible.When the metal layer removal on photoresist surface, photoetching
The area of glue exposure is continuously increased, and when impregnating removal photoresist, effective contact area of photoresist and soak is also bigger,
The reaction of photoresist and soak is also more abundant, photoresist fully reacting, and the kish of surface attachment will also be done
Net gets rid of, and the yield rate of stripping technology is thus improved.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is stripping technology flow chart provided by a kind of specific embodiment of the present invention；
Fig. 2 is photoresist provided by a kind of specific embodiment of the present invention and the effect after the surface deposition metal layer of substrate
Fruit schematic diagram；
Fig. 3 is the effect signal that the side adhesive film of photoresist is opened provided by a kind of specific embodiment of the present invention
Figure；
Fig. 4 is the effect of the adhesive film on all metal layers for open provided by a kind of specific embodiment of the present invention deposit
Fruit schematic diagram；
Fig. 5 is the effect diagram after removal photoresist provided by a kind of specific embodiment of the present invention.
Specific embodiment
Just as described in the background section, in current stripping technology, when especially substrate surface has step, photoresist table
Face metal removal is not clean, reduces stripping technology yield rate.Inventor is the study found that in photoresist side shape after Metal deposition
The connection of straticulation metal, will affect soak and photoresist haptoreaction, so that having metal residual, to make stripping technology finished product
Rate reduces.
On the basis of the studies above, the embodiment of the invention provides it is a kind of improve stripping technology yield rate method,
This method comprises: coating photoresist in substrate；The photoresist being coated in substrate is exposed, is developed on a photoresist out
The figure of negative bevel；The table of the photoresist retained in substrate after development and the substrate exposed after the figure of negative bevel out that develops
Face deposited metal；Adhesive film is covered on the metal layer；The mode for opening adhesive film along preset direction removes the surface of photoresist
The metal layer of attachment；The photoresist is removed.
Scheme provided by the embodiment of the present invention simply and effectively eliminates the metal layer on photoresist surface, so that impregnating
Liquid and photoresist can sufficiently react, and improve stripping technology yield rate.
It is understandable in order to enable the above objects, features and advantages of the present invention to become apparent, with reference to the accompanying drawing to this hair
Bright specific embodiment is described in detail.
Detail is elaborated in the following description to fully understand the present invention.But the present invention can with it is a variety of not
Other way described herein is same as to implement, those skilled in the art can do class without violating the connotation of the present invention
Like popularization.Therefore the present invention is not limited to the specific embodiments disclosed below.
Fig. 1, Fig. 2 and Fig. 5 are please referred to, Fig. 1 is stripping technology flow chart provided by a kind of specific embodiment of the present invention；
Fig. 2 is the effect signal after photoresist provided by a kind of specific embodiment of the present invention and the surface deposition metal layer of substrate
Figure；Fig. 5 is the effect diagram after removal photoresist provided by a kind of specific embodiment of the present invention.
In the first embodiment of the present invention, with to have the substrate of step with improve stripping technology yield rate method be
Example is provided for the embodiments of the invention the method for improving stripping technology yield rate and is described.As shown in Figure 1, the present invention is real
Applying the method that stripping technology yield rate is improved provided by example includes:
Step 110: coating photoresist on a substrate 200.As shown in Fig. 2, the substrate 200 refers generally to the chips such as silicon wafer,
Substrate 200 is cleaned and is dried before coating photoresist, guarantee the substances such as 200 surface free from dust of substrate, grease, water,
To guarantee adhesiveness and photoetching quality, then on 200 surface of substrate, one layer of adhesiveness of coating is good, and thickness is moderate, and thickness is uniform
Photoresist.
Step 120: coating photoresist on a substrate 200 being exposed, the figure for the negative bevel out of developing on a photoresist
Shape.So-called exposure, which just refers to, carries out selective light chemical reaction to photoresist, dissolves photoresist change in developer solution
Property.So-called development is exactly to dissolve unwanted photoresist after exposure, is developed usually using developing solution dissolution photoresist, special
In the case of can be developed using the modes such as ultrasonic development.The figure of negative bevel out of developing is exactly figure required for finished product.
Step 130: being exposed after remaining photoresist 220 and the figure of negative bevel out that develops in substrate 200 after development
This whole upper surface of substrate 200 deposit one layer of metal layer.Effect after deposited metal is as shown in Fig. 2, in substrate 200
The upper surface of upper remaining photoresist 220 deposits the first metal layer 211, the substrate exposed after the figure of negative bevel out that develops
200 surface deposition third metal layer 213 can deposit second metal layer 212, second metal layer 212 in the side of photoresist 220
Connect the first metal layer 211 and third metal layer 213.
On the basis of first embodiment of the invention, the thickness of second embodiment of the present invention combination photoresist and the gold of deposit
The thickness for belonging to layer is provided for the embodiments of the invention the method for improving stripping technology yield rate and is described, and other parts please join
First embodiment is examined, this will not be repeated here.
On the basis of first embodiment of the invention, in second embodiment of the invention, carry out the raising stripping technology at
When the method for product rate, the thickness for the photoresist of selection coated in substrate is 2-3 times of the thickness of the metal layer of deposit, as long as
The ratio of the thickness of the thickness and metal layer of photoresist can guarantee that the adhesive film in the present invention can be relatively easy to light
The metal layer on the surface of photoresist is got rid of.
Step 140: covering adhesive film on the metal layer, the metal layer includes the first metal layer 211, the second metal
Layer 212 and third metal layer 213.
On the basis of above-mentioned two embodiment, third embodiment of the invention is described for adhesive film, other parts
Above-mentioned two embodiment is please referred to, this will not be repeated here.
In the third embodiment, the adhesive film of the metal layers on the surface of photoresist is removed as blue film, it is preferred to use electricity
The blue film of sub- grade.The blue film viscosity is moderate, and particle is fewer, and electrostatic is few, can achieve stickup removal photoresist in this way
Surface metal layer purpose while will not because of adhesive film itself property and the performance of substrate is impacted.
On the basis of above-mentioned first embodiment, second embodiment and 3rd embodiment, in following embodiment of the present invention,
Two new embodiments are described for the different paste positions of adhesive film, other parts please refer to above-mentioned several implementations
Example, this will not be repeated here.
In the fourth embodiment, one layer of adhesive film is covered each by the metal layer of photoresist side, to remove photoetching
The metal layer of glue side attachment.The purpose that adhesive film is only covered on the metal layer of the side of photoresist is, uses small amount
Adhesive film can remove photoresist side metal layer, saved cost, meanwhile, eliminate the gold of the side of photoresist
Category layer can expose the photoresist of certain area, and achieving the effect that, which contacts soak with photoresist, sufficiently reacts.
In the 5th embodiment, the surface of remaining photoresist and develop after the figure of negative bevel out in substrate after development
(i.e. the first metal layer 211, second metal layer 212 and third metal on all metal layers of the surface deposition of the substrate exposed
213) layer covers adhesive film, remove the metal layer of the surface attachment of photoresist.Adhesive film is covered on all metal layers of deposit
Purpose be, only need to cover a piece of adhesive film, save paste the time.Due to the third metal layer 213 contacted with substrate 200
Adhesiveness is preferable, and the adhesiveness of the first metal layer 211 on the surface of photoresist 220 and second metal layer 212 and photoresist 220
It is poor, during opening adhesive film, while the second metal layer 212 of the side of photoresist is removed, photoresist it is upper
The first metal layer 211 on surface can also be torn off, and such photoresist 220 will be exposed, and be become with the contact area of soak
Greatly, the removal speed of photoresist becomes faster.
Step 150: opening the adhesive film along preset direction, remove the metal layer of the surface attachment of photoresist.Using
The purpose of the metal layer of the surface attachment of adhesive film removal photoresist is, solves the surface that metal layer is covered on photoresist, resistance
Hindered contact of the photoresist with soak, thus influence photoresist and soak react and the metal layer of photoresist side
Due to being connected with the metal layer deposited in substrate, will not because of photoresist removal and completely fall off so that the surface of photoresist
Metal layer remove sordid problem.
In addition, under normal circumstances as the substrates such as silicon wafer are easier to be crushed, it is soft and paste removal photoresist to paste film quality
Dynamics is moderate when the metal layer on surface, thus this physics supplementary means is using the metal layer on adhesive film removal photoresist surface
It is comparatively gentle, it is not easy to impact substrate, even so, using the metal layer side on this removal photoresist surface of adhesive film
When formula, it is still necessary to according to preset direction, a little opens adhesive film, with reach pull apart the metal layer on photoresist surface without
Damage the purpose of substrate.
Referring to FIG. 3, the effect that Fig. 3 is the side adhesive film for opening photoresist provided by fourth embodiment of the invention is shown
It is intended to.
The adhesive film is opened along preset direction according to first embodiment, opens the side of photoresist in fourth embodiment
The effect of the adhesive film covered on metal layer as shown in figure 3, open covers viscous in 220 left side second metal layer 212 of photoresist
After pad pasting, 220 left side second metal layer 212 of the photoresist film that is stuck is got rid of.
Referring to FIG. 4, Fig. 4 is the adhesive film on all metal layers for open provided by fifth embodiment of the invention deposit
Effect diagram.
In 5th embodiment, the adhesive film that is covered along all metal layers that preset direction opens the surface of photoresist 220
Effect as shown in figure 4, opening photoresist 220 during, the second metal layer 212 of the side of photoresist 220 is pulled, light
The first metal layer 211 of the upper surface of photoresist 220, which is also torn, to be got rid of.
On the basis of above-mentioned all embodiments, carried out for the new embodiment that the different directions for opening adhesive film are made
Description, other parts please refer to above-mentioned several embodiments, and this will not be repeated here.
In the sixth embodiment of the present invention, opening the adhesive film along preset direction includes: to open in one direction
Adhesive film.As described above, the substrates such as silicon wafer are easier to be crushed, when opening adhesive film, in order to guarantee not cause to substrate
Damage, it is possible to the gold on the surface of photoresist is removed by the way of little by little opening adhesive film from one end in one direction
Belong to layer.
In the seventh embodiment of the present invention, along preset direction open the adhesive film include: from edge to centre one
Point point opens adhesive film, in such a way that this kind opens adhesive film, has not only accelerated the speed that adhesive film is opened, but also will not damage base
Bottom can also pull the metal layer on the surface of photoresist very well.
Step 160: photoresist removal.It the methods of is removed photoresist using soaks such as glue-dispensers and gets rid of 200 surface residual of substrate
Photoresist 220, meanwhile, being attached to still remaining metal layer on the surface of photoresist 220 also can be with the removal of photoresist 220
And clean removing.Effect after photoresist removal is as shown in figure 5, the substrate 200 exposed after the figure of negative bevel out that develops
The third metal layer 213 of surface deposition leave, the as finished product after stripping technology.
In conclusion the method for improving stripping technology yield rate provided by the embodiment of the present invention, covers on the metal layer
Adhesive film, and along preset direction open adhesive film to paste the metal layer on removal photoresist surface, due to paste film quality it is soft and
Dynamics is moderate when pasting the metal layer on removal photoresist surface, so removing the metal on photoresist surface using adhesive film.This
Outside, adhesive film is opened along preset direction, substrate and metal layer Impact direction are fixed, and stress is also just more stable, thus, effective
When removing the metal layer on photoresist surface, substrate will not be damaged because substrate is frangible.The metal layer on photoresist surface
When removal, the area of photoresist exposure is continuously increased, effective contact surface of photoresist and soak when impregnating removal photoresist
Product is also bigger, and the reaction of photoresist and soak is also more abundant, photoresist fully reacting, the kish of surface attachment
Also it will be got rid of by clean, the yield rate of stripping technology is thus improved.
Secondly, photoresist thickness is 2-3 times of metal layer thickness, including endpoint value in the embodiment of the present invention, guarantee in this way
Thickness proportion, that is, may make adhesive film can be relatively easy to the stickup of the metal layer on photoresist surface is got rid of.
Again, moderate according to the orchid film viscosity using the blue film of blue film, especially electron level in the embodiment of the present invention,
Grain is few, the few property of electrostatic, can preferably achieve the purpose that the metal layer for pasting removal photoresist surface without damaging substrate.
In addition, improved provided by the embodiment of the present invention in the method for stripping technology yield rate, it can be only in photoresist
Adhesive film is covered on side metal layer, the metal layer of the side of photoresist can be removed using less amount of adhesive film, is saved
Cost.Adhesive film can also be covered on entire metal layer, with the only covering adhesive film phase on the side metal layer of photoresist
Than, a piece of adhesive film only need to be covered, saves and pastes the time, meanwhile, the metal layer of photoresist upper surface can be also torn off, so that light
The area of photoresist exposure is bigger, and bigger with the contact area of soak, the reaction time is shortened.
Finally, when adhesive film is opened in the embodiment of the present invention in one direction, it is easy to operate, while guaranteeing that substrate stress is steady
Fixed, substrate will not be damaged by opening stickup membrane process.It can also little by little be taken off from edge to centre when opening adhesive film
Adhesive film is opened, compared with opening adhesive film in one direction, the speed for opening adhesive film is accelerated.
Above to it is provided by the present invention it is a kind of improve stripping technology yield rate method be described in detail.It answers herein
With a specific example illustrates the principle and implementation of the invention, the explanation of above example is only intended to help to manage
Solve method and its core concept of the invention.It should be pointed out that for those skilled in the art, not departing from
, can be with several improvements and modifications are made to the present invention under the premise of the principle of the invention, these improvement and modification also fall into this hair
In bright scope of protection of the claims.
Claims (8)
1. a kind of method for improving stripping technology yield rate characterized by comprising
Photoresist is coated in substrate；
Coating photoresist on the substrate is exposed, the figure for the negative bevel out of developing on the photoresist；
The surface of the photoresist retained in the substrate after development and the substrate exposed after the figure of negative bevel out that develops is formed sediment
Product metal layer, 2-3 times with a thickness of the metal layer thickness of the photoresist, to reduce the metal layer on the photoresist surface
Removal difficulty；
Adhesive film is covered on the metal layer；
The mode for opening the adhesive film along preset direction removes the metal layer of the surface attachment of the photoresist；
The photoresist is removed；
Wherein, the table of the photoresist retained in the substrate after development and the substrate exposed after the figure of negative bevel out that develops
Face deposited metal includes:
The upper surface of remaining photoresist deposits the first metal layer on the substrate；The exposure after the figure of negative bevel out that develops
The surface deposition third metal layer of substrate out can deposit second metal layer in the side of photoresist, second metal layer connection the
One metal layer and third metal layer.
2. the method according to claim 1 for improving stripping technology yield rate, which is characterized in that be located at the photoresist
Adhesive film is covered on the metal layer of side.
3. the method according to claim 1 for improving stripping technology yield rate, which is characterized in that in all metals of deposit
Adhesive film is covered on layer.
4. the method according to claim 1 for improving stripping technology yield rate, which is characterized in that described to be taken off along preset direction
Opening the adhesive film includes: to open the adhesive film in one direction.
5. the method according to claim 1 for improving stripping technology yield rate, which is characterized in that described to be taken off along preset direction
Opening the adhesive film includes: to open the adhesive film from edge to centre.
6. the method according to claim 1 for improving stripping technology yield rate, which is characterized in that the adhesive film is orchid
Film.
7. the method according to claim 6 for improving stripping technology yield rate, which is characterized in that the orchid film is electron level
Blue film.
8. the method according to any one of claims 1 to 7 for improving stripping technology yield rate, which is characterized in that the base
Bottom is the substrate for having step.
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| CN106601768A (en) * | 2016-12-22 | 2017-04-26 | Tcl集团股份有限公司 | Transparent display device and preparation method therefor |
| CN112117321B (en) * | 2020-10-21 | 2024-03-01 | 维信诺科技股份有限公司 | Display panel and manufacturing method thereof |
| CN114038952A (en) * | 2021-09-09 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Light emitting diode chip, preparation method thereof and display device |
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| CN103091981A (en) * | 2013-01-10 | 2013-05-08 | 中国科学院半导体研究所 | Method for manufacturing metal grid template for photolithography by utilizing self-assembling ball |
| CN103293850A (en) * | 2013-05-08 | 2013-09-11 | 中国电子科技集团公司第五十五研究所 | Single-layered positive photoresist photoetching method applied to metal stripping |
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| CN101814450A (en) * | 2010-04-29 | 2010-08-25 | 上海宏力半导体制造有限公司 | Method for detecting adhesive force of metal layer on back of wafer |
| CN102651304A (en) * | 2011-02-23 | 2012-08-29 | 上海华虹Nec电子有限公司 | Method for improving wet-method metal-etching process |
| CN102881586A (en) * | 2012-10-12 | 2013-01-16 | 上海华力微电子有限公司 | Method for improving flatness of contact hole subjected to tungsten chemical mechanical polishing (CMP) |
| CN103487160A (en) * | 2013-09-27 | 2014-01-01 | 北京理工大学 | Method for manufacturing Pt resistor temperature sensor |
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|---|---|---|---|---|
| CN103091981A (en) * | 2013-01-10 | 2013-05-08 | 中国科学院半导体研究所 | Method for manufacturing metal grid template for photolithography by utilizing self-assembling ball |
| CN103293850A (en) * | 2013-05-08 | 2013-09-11 | 中国电子科技集团公司第五十五研究所 | Single-layered positive photoresist photoetching method applied to metal stripping |
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