CN104779178B - Bottom anti-reflective layer forming method - Google Patents

Bottom anti-reflective layer forming method Download PDF

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Publication number
CN104779178B
CN104779178B CN201410014457.8A CN201410014457A CN104779178B CN 104779178 B CN104779178 B CN 104779178B CN 201410014457 A CN201410014457 A CN 201410014457A CN 104779178 B CN104779178 B CN 104779178B
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barc
reflective layer
bottom anti
wafer
forming method
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CN104779178A (en
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邹永祥
王鹢奇
杨晓松
王跃刚
易旭东
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Semiconductor Manufacturing International Shanghai Corp
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Semiconductor Manufacturing International Shanghai Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention provides a kind of bottom anti-reflective layer (BARC) forming method, only rotating wafer 3~8 seconds after dripping BARC to crystal circle center, the shorter BARC of this process time is also uncured, side washing liquid is dripped then to crystal round fringes, and rotating wafer 13~18 seconds, keep BARC thickness uniform, simultaneously because BARC is also uncured when side washing, the BARC that crystal round fringes can effectively be removed, to form BARC in homogeneous thickness in crystal column surface.

Description

Bottom anti-reflective layer forming method
Technical field
The present invention relates to ic manufacturing technology field, more particularly to a kind of bottom anti-reflective layer (BARC) formation side Method.
Background technology
In general, in the manufacturing process of semiconductor devices, can be formed on the conductive layer or dielectric layer of semiconductor devices A kind of photoetching agent pattern is not covered with the partial electroconductive layer or medium of photoetching agent pattern then using photoresist as mask Layer is not protected, can be in the etch process by place to go, or is injected in ion implantation technology.With semiconductor devices Integrated level improve, the linewidth requirements of semiconductor devices are smaller and smaller, and the control of crux size is also more and more important, certainly to carve The requirement of etching technique is also higher and higher.In order to meet the requirement of photoetching, in addition to the continuous upgrading in litho machine equipment aspect In addition, the quality and precision of photoetching are also improved using other technologies, for example use anti-reflection layer (ARC).The work of anti-reflection layer With being：Prevent light by being reflected at wafer interface after photoresist, because the reflection light for returning to photoresist can be with incidence Light interferes, and photoresist is caused to be unable to uniform exposure.The development of ARC have passed through top anti-reflection layer (TARC) and bottom counnter attack Penetrate two stages of layer (BARC).
What is be currently mainly used is organic bottom anti-reflective layer, at low cost, refractive index is reproducible, flatness Good advantage, simultaneously because organic substance, can do over again.The refractive index of organic bottom anti-reflection layer will be matched with photoresist, Reflection of the incident light at photoresist-organic bottom anti-reflection layer interface can be eliminated in this way；In addition, organic bottom anti-reflection layer is also Light can be absorbed, so light is just absorbed when by organic bottom anti-reflection layer, it is next without reaching Interface is reflected.
After coating BARC, it usually needs remove wafer using EBR (Edge Bead Removal remove flange) method Edge specific width BARC, this is because after spin coating BARC, BARC flow under the influence of centrifugal force wafer edge or The back side, after dry, these BARC, which are easy to peel off, simultaneously generates particle, to become defect or failure in subsequent technical process Source, EBR methods are one side washing nozzle for liquid of assembly on photoresist spin coating device, are sprayed out of described side washing nozzle for liquid few Amount can remove the solvent of BARC to the edge and the back side of wafer, utilize the characteristic of sprayed solvent and BARC similar compatibilities will BARC is removed.However, finding in actual production, the BARC at 10 edge of wafer is always thicker than the BARC20 of other positions after EBR Degree is big, as shown in virtual coil in Fig. 1, causes to leave residue when subsequent etching（residue）, and then generate and purse up defect （peeling defect）.
Invention content
The purpose of the present invention is to provide a kind of bottom anti-reflective layer forming methods, to solve the BARC of crystal round fringes than it The big problem of the BARC thickness of its position.
In order to solve the above technical problems, the present invention provides a kind of bottom anti-reflective layer forming method, including：
S1：Bottom anti-reflective layer is dripped to crystal circle center（BARC）；
S2：Rotate the wafer 3~8 seconds；And
S3：Side washing liquid, while rotating wafer 13~18 seconds are dripped to the crystal round fringes.
Further, in the step S1 of the bottom anti-reflective layer forming method, the wafer is static.
Further, in the step S1 of the bottom anti-reflective layer forming method, the wafer rotary speed be 100~ 500 revs/min.
Further, in the step S1 of the bottom anti-reflective layer forming method, dropping liquid amount is 2~4ml.
Further, anti-to crystal circle center drop bottom in the step S1 of the bottom anti-reflective layer forming method Reflecting layer.
Further, in the step S2 of the bottom anti-reflective layer forming method, the wafer rotary speed is 1000 ~3000 revs/min.
Further, in the step S3 of the bottom anti-reflective layer forming method, the wafer rotary speed is 1000 ~2000 revs/min.
Further, in the step S3 of the bottom anti-reflective layer forming method, side washing flow quantity is 30~70ml/ min。
Compared with prior art, only rotating wafer 3~8 seconds after the present invention drips BARC to crystal circle center, this process time compared with Short BARC is also uncured, drips side washing liquid, and rotating wafer 13~18 seconds then to crystal round fringes, keeps BARC thickness uniform, simultaneously BARC is also uncured when due to side washing, can effectively remove the BARC of crystal round fringes, in homogeneous thickness to be formed in crystal column surface BARC。
Description of the drawings
Fig. 1 is the schematic diagram for the BARC that the prior art is formed；
Fig. 2 is the flow diagram of the bottom anti-reflective layer forming method of one embodiment of the invention；
Fig. 3 A~Fig. 3 D are the schematic diagrames during the bottom anti-reflective layer forming method of one embodiment of the invention.
Specific implementation mode
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention Specific implementation mode be described in detail.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still the present invention can be with Implemented different from other manner described here using other, those skilled in the art can be without prejudice to intension of the present invention In the case of do similar popularization, therefore the present invention is not limited by following public specific embodiment.
Secondly, combination schematic diagram of the present invention is described in detail, when describing the embodiments of the present invention, for purposes of illustration only, table Show that the sectional view of device architecture can disobey general proportion and make partial enlargement, and the schematic diagram is example, is not answered herein Limit the scope of protection of the invention.In addition, three-dimensional space that should be comprising length, width and depth in actual fabrication.
In the background technology it has been already mentioned that coating BARC in the prior art and carrying out crystal round fringes after EBR techniques BARC is often bigger than the BARC thickness of other positions, causes to leave residue when subsequent etching.Through inventor the study found that this is After dripping BARC to crystal circle center in the prior art, such as 25 seconds meeting rotating wafer long period is so that BARC is paved with whole wafer Surface, BARC cures substantially during this, drips side washing liquid then to the left and right positions crystal round fringes 1mm, then rotating wafer 10 seconds with Remove the BARC of wafer side wall.However since substantially cured BARC is impacted wafer side by the powerful impact force of side washing liquid Edge position causes the BARC of crystal round fringes bigger than the BARC thickness of other positions, and even dripping side washing liquid can not obtain well Effect.For this purpose, the present invention provides a kind of bottom anti-reflective layer forming method, only rotating wafer 3 after dripping BARC to crystal circle center ~8 seconds, the shorter BARC of this process time was also uncured, drips side washing liquid, and rotating wafer 13~18 seconds then to crystal round fringes, makes BARC thickness is uniform, simultaneously because BARC is also uncured when side washing, the BARC of crystal round fringes can be effectively removed, in wafer table Face forms BARC in homogeneous thickness.
The bottom anti-reflective layer forming method of the present invention is made into one below in conjunction with Fig. 2 and Fig. 3 A~3D and specific embodiment Step is described in detail.
As shown in Figure 3A, step S1, BARC nozzle 1 is first carried out and is moved to 100 center of wafer to 100 center of wafer Drip BARC.In this step, wafer 100 can be static, can also such as 100~500 revs/min of low speed rotation, total dropping liquid amount E.g. 2~4ml, preferably 3ml.The wafer 100 can be the wafer of various sizes, such as 6 inches, 8 inches or 12 inches. It could be formed with that various film layers are either active or passive device on the wafer 100, in the application, in order to simplify attached drawing, only Blank face plate is shown.
As shown in Figure 3B, then execute step S2, rotating wafer 3~8 seconds, preferably 5 seconds so that BARC200 be paved with it is whole A crystal column surface.In this step, rotary speed such as 1000~3000 revs/min, preferably 2000~2500 of wafer 100 Rev/min.
As shown in figs. 3 c and 3d, step S3 is then executed, that is, executes removal flange（Edge Bead Removal, EBR) Technique assembles a side washing nozzle for liquid 2 on photoresist spin coating device, drips side washing liquid to wafer frontside edge, utilizes centrifugal force Side washing liquid stream is set to utilize the characteristic of sprayed side washing liquid and BARC similar compatibilities to remove BARC to the edge and the back side of wafer 100 It removes, and keeps BARC thickness uniform by rotation.In this step, rotating wafer 13~18 seconds, preferably 15 seconds.The rotation of wafer 100 Such as 1000~2000 revs/min, preferably 1500 revs/min of rotary speed.The model of the side washing liquid is, for example, OK73, dropping liquid Flow is, for example, 30~70ml/min, preferably 50~60ml/min.In the present embodiment, side washing nozzle for liquid 2 is moved to away from described Drip side washing liquid in the position of 1~1.5mm of wafer frontside edge.
Then, you can conventional technique is carried out, such as spin coating photoresist（PR）, to photoresist carry out EBR and baking, to photoetching Glue such as is exposed and develops at the techniques.
Compared with prior art, present invention reduces the times of step S2, when the BARC on wafer is not yet fully hardened Side washing is begun to, even if since the impact force of side washing liquid keeps the BARC thickness of crystal round fringes larger, but side washing liquid is not also complete Solidification be easier to remove, while increase step S3 time on the one hand can effective side washing, and can guarantee wafer on BARC can be equal It is even to be coated in crystal column surface.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims Range.

Claims (8)

1. a kind of bottom anti-reflective layer forming method, which is characterized in that including：
S1：Bottom anti-reflective layer is dripped to crystal column surface；
S2：Rotate the wafer 3~8 seconds；
S3：When the bottom anti-reflective layer is also uncured, side washing liquid is dripped to the crystal round fringes, while rotating the wafer 13 ~18 seconds.
2. bottom anti-reflective layer forming method as described in claim 1, which is characterized in that in step S1, the wafer is static.
3. bottom anti-reflective layer forming method as described in claim 1, which is characterized in that in step S1, the wafer rotation Speed is 100~500 revs/min.
4. bottom anti-reflective layer forming method as described in claim 1, which is characterized in that in step S1, dropping liquid amount is 2~ 4ml。
5. bottom anti-reflective layer forming method as described in claim 1, which is characterized in that in step S1, to the wafer Drip bottom anti-reflective layer in center.
6. bottom anti-reflective layer forming method as described in claim 1, which is characterized in that in step S2, the wafer rotation Speed is 1000~3000 revs/min.
7. bottom anti-reflective layer forming method as described in claim 1, which is characterized in that in step S3, the wafer rotation Speed is 1000~2000 revs/min.
8. bottom anti-reflective layer forming method as described in claim 1, which is characterized in that in step S3, side washing flow quantity is 30~70ml/min.
CN201410014457.8A 2014-01-13 2014-01-13 Bottom anti-reflective layer forming method Active CN104779178B (en)

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CN108493099A (en) * 2018-04-11 2018-09-04 武汉新芯集成电路制造有限公司 A kind of wafer bonding method
CN112162471A (en) * 2020-10-29 2021-01-01 沈阳芯源微电子设备股份有限公司 Method for removing glue pile at edge of square sheet

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CN103019050A (en) * 2011-09-22 2013-04-03 三星电子株式会社 Diluent composition for RRC process and EBR process, and apparatus for supplying the same

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CN1400631A (en) * 2001-07-26 2003-03-05 株式会社东芝 Film coating process, film coating apparatus and semiconductor device making process
CN102576193A (en) * 2009-10-09 2012-07-11 Az电子材料美国公司 Positive-working photoimageable bottom antireflective coating
CN102087993A (en) * 2009-12-04 2011-06-08 中芯国际集成电路制造(上海)有限公司 Groove forming method
CN103019050A (en) * 2011-09-22 2013-04-03 三星电子株式会社 Diluent composition for RRC process and EBR process, and apparatus for supplying the same
CN102709175A (en) * 2012-05-23 2012-10-03 上海宏力半导体制造有限公司 Forming method of photoresist layer in deep groove process

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