CN112162471A - Method for removing glue pile at edge of square sheet - Google Patents
Method for removing glue pile at edge of square sheet Download PDFInfo
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- CN112162471A CN112162471A CN202011177623.8A CN202011177623A CN112162471A CN 112162471 A CN112162471 A CN 112162471A CN 202011177623 A CN202011177623 A CN 202011177623A CN 112162471 A CN112162471 A CN 112162471A
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- edge
- square
- glue
- photoresist
- thickness
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- 239000003292 glue Substances 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000000126 substance Substances 0.000 claims abstract description 34
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 239000007921 spray Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004528 spin coating Methods 0.000 abstract description 4
- 238000001259 photo etching Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a method for removing the problem of glue piling at the edge of a square sheet, and belongs to the technical field of semiconductor photoetching. The method aims at removing the glue stacking edge on the glass substrate square sheet and is suitable for the glass substrate square sheet. In the gluing process, the thickness of the glue film at the edge area of the square sheet is reduced in a chemical mode, and then the thickness of the edge glue film is consistent with the thickness of the glue film at the center position in a rotating and throwing mode. The improved spin coating process improves the consistency of the thickness of the edge and the center glue film, improves the utilization rate of the square sheet by adjusting various process parameters on the premise of ensuring the edge removing effect, optimizes the time consumption for processing edge glue stacking, and plays a role in reducing cost and increasing yield.
Description
Technical Field
The invention relates to the technical field of semiconductor photoetching, in particular to a method for removing edge stacking glue of a square sheet.
Background
In the field of displays, CRT displays, LCD displays, PDP displays, OLED displays and various display products have great market demand potential, and glass substrates are important raw materials for display panels. The square substrates in the glass substrate occupy a large share, and how to improve the utilization rate of the square substrates becomes the use bottleneck of the square substrates and is also an important factor for determining the productivity and the benefit of the display panel.
The photolithography is one of the most critical steps in the integrated circuit manufacturing process, and the photolithography process mainly comprises glue spreading, exposure, development and the like, wherein the surface uniformity of the glue spreading process has very important influence on the subsequent exposure and development and the performance of the whole final product.
The production experience shows that the surface gluing uniformity of the square sheet is mainly influenced by edge glue piling, the edge glue piling is easy to cause the problems of wind marks and the like, and the edge glue piling is mainly related to different centrifugal forces on the periphery of the glass substrate of the square sheet.
The existing edge photoresist removing method is divided into two modes of chemical removing and edge exposure, and has the advantages and the disadvantages that:
the edge exposure has the advantages of high production efficiency, low device cost, easy control of the process and neat edge profile, and has the disadvantage that the profile has a slope due to light scattering. For the square film, because the distances between the peripheral points of the film and the center are inconsistent, the exposure of the periphery of the square film is difficult to realize by a wafer exposure mode.
The chemical removal process is as follows: the chemical edge-removing needle head and the surface of the wafer form a certain angle, chemical liquid is sprayed to a designated position, and the wafer rotates in the spraying process, so that the edge of the wafer is removed. Chemical removal has the advantage of no slope over edge exposure, and has the disadvantages of long time consumption, high solvent consumption cost, and non-smooth profile of the removed area.
Disclosure of Invention
In order to solve the problems of edge glue piling and poor removal effect in the prior art of square sheet gluing, the invention aims to provide the method for removing the edge glue piling of the square sheet, the method removes the glue piling at the edge of the square sheet in the gluing process in a chemical mode, and then obviously improves the edge gluing uniformity through subsequent rotation, so that the glue piling area at the edge of the square sheet is reduced to be within 7mm from 42mm, and the utilization area of the square sheet can be increased to be more than 98%.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a method for removing edge stacking glue of a square sheet is used for removing edge stacking glue aiming at photoresist coated on the square sheet, and comprises the following steps:
(1) the square plate is conveyed to a gluing unit to be coated with photoresist;
(2) when the photoresist is coated, partially removing the photoresist film in the edge area of the wafer by adopting a chemical mode, namely reducing the thickness of the photoresist film in the edge area of the wafer, and controlling the size of the reduced area;
(3) after the edges of the square sheets are thinned, adjusting the rotating speed of the square sheets to 1200r-1400r, and rotating for 5s to enable the thinned edge parts of the square sheets to be re-coated with glue and enable the thickness of a glue film in a thinned area to be consistent with that of the central photoresist;
(4) and conveying the square sheet coated with the photoresist to a hot plate for post-baking treatment.
In the step (1), the coated photoresist has a viscosity of 10-30cp, and the thickness of the glue film formed on the glass substrate is 1-5 μm.
In the step (2), when the edge stacking glue is removed from the square sheet in a chemical mode: the target removal width is W1, and let POS1 be a point on the diagonal of the square piece, then W1 is the distance from POS1 to the outer corner of the square piece, and let POS2 be a point on the diagonal of the square piece and outside the edge of the square piece (outside the diagonal of the square piece), and a needle spraying chemicals (removal liquid) performs reciprocating scanning between POS1 and POS2, and the photoresist at the edge of the square piece is thinned to 50% -60% of the original thickness by controlling the chemical flow, needle angle, scanning speed and scanning time.
In the step (2), the distance between the POS1 and the POS2 is 2-4 mm; when the chemical mode (EBR) is adopted to spray the wine chemicals, the chemical flow, the needle angle, the scanning speed and the scanning time need to be determined according to the thickness, the characteristics and the like of the glue film on the square sheet. The thickness of the photoresist at the edge of the square sheet is reduced to 0.5-2 μm.
In the step (4), the baking temperature of the post-baking treatment is 110-.
The method is carried out by utilizing a glue film edge removing device, wherein the glue film edge removing device comprises a silicon wafer storage unit, a glue coating unit, a hot plate, an edge exposure unit and a developing unit, wherein: the silicon wafer storage unit is used for storing a silicon wafer, the gluing unit is used for spin coating of photoresist, the hot plate is used for post-baking treatment of the silicon wafer, the edge exposure unit is used for edge exposure of the silicon wafer, and the developing unit is used for developing.
The invention has the following advantages and beneficial effects:
1. the product utilization rate is improved: glass substrate square piece that does not pass through chemistry edging, marginal zone all have the heap of glue of different degree by 42mm department, and the influence such as exposure etching of heap glue to follow-up product is huge, to 8 cun square pieces, has seriously influenced the effective utilization space of square piece. The square sheet after the edge is removed by a chemical mode, the stacking width can be reduced to 7mm, and the product utilization rate of the square sheet is greatly improved.
2. Capacity is improved: in the method, the chemical edge removing process and the gluing process are carried out simultaneously, and after the thin edge is chemically cut, a corresponding photoresist rotating and throwing process is carried out, compared with the gluing process without the chemical edge removing process, the gluing time of the method is not greatly prolonged, and the gluing time of 5s is only increased for the coating of the photoresist with the thickness of 4 mu m. But the subsequent processing procedure of stacking the glue on the edge is omitted, and the productivity is greatly improved.
3. Accurate control of edge removal effects: in the chemical removal process, the fixed needle is washed for a long time at the position of POS1, the needle is scanned back and forth for a short time at POS1-POS2-POS1-POS2 to carry out chemical removal, and the positions of POS1 and POS2 are shown in figure 2. Through the scanning times, the scanning speed and the POS1 and POS2 position setting, the edge removing effect can be controlled more accurately by controlling parameters such as the flow of the chemical cleaning liquid, and the gluing uniformity of the edge and the center after gluing is improved.
Drawings
Fig. 1 is a schematic view of a gluing unit used in the present invention.
FIG. 2 is a schematic illustration of chemical edge deletion used in the present invention.
Fig. 3 is a graph showing the results of edge removal in comparative example 1.
FIG. 4 is a graph showing the spin-coating results of the chemical removal of example 1.
Detailed Description
The invention is described in detail below with reference to the figures and examples.
The invention provides a method for removing the problem of glue piling at the edge of a square sheet, which comprises the following specific steps:
firstly, the square sheets are conveyed into a cold plate by a storage unit through a robot for cooling, the cooling time is generally 45s, then the square sheets are conveyed to a gluing unit for rotary gluing, and the gluing schematic diagram is shown in figure 1;
and secondly, chemically removing while gluing, wherein the removing width W1 is set as the distance from an inner circle line POS1 of the square sheet to the edge of the square sheet, and the position of an outer circle line POS2 of the edge of the square sheet is required to exceed the outermost edge of the square sheet. During the removal process, the needle repeatedly scans and sprays the chemicals between POS1-POS2, and the scanning speed and the chemical flow are adjusted according to specific conditions. The chemicals are generally AZ EBR7030, manufactured by Merck electronic materials (Suzhou) Inc., and have a flow rate of 20-30ml/min and a scanning speed of 5-25 mm/s. After chemical thinning and removing, photoresist at the edge and the center is uniformly distributed through spin coating;
thirdly, the wafer enters a hot plate for post-baking treatment, the baking temperature is 110-.
Example 1:
the first step is as follows: the square sheet rotates along with the sheet bearing table, the glue coating spray head moves to a position right above the center of the square sheet, and the photoresist starts to be coated in a spinning mode; the coated photoresist has the viscosity of 10-30cp, the glue amount of 3.2ml, the gluing rate of 0.8ml/s, the rotation speed of a wafer bearing table of 500-3500 r/min and the gluing thickness of 3 mu m. In the gluing process, a needle is used for repeatedly scanning 3 times between POS1 (43 mm from the edge) and POS2 (2 mm outside the square sheet) to spray chemicals to shear and thin the edge to 50% -60% of the initial thickness.
The second step is that: after the edges of the square sheets are thinned, the rotating speed of the square sheets is adjusted to 1300r, the square sheets are rotated for 5s, the thinned edge parts of the square sheets are re-coated with glue, the thickness of a glue film in a thinning area is consistent with that of a central photoresist, and the photoresist at the edges and the central photoresist is uniformly distributed. As shown in fig. 2.
The third step: after the gluing is finished, the square sheets are sent to a hot plate for baking, the baking temperature is 110 ℃, and the baking time is 80 s.
In the embodiment, the photoresist with the thickness of 3 μm has excellent effects in reducing the photoresist stacking at the edge of the square piece and improving the surface uniformity of the square piece, as shown in fig. 4. Compared with the comparative example, the stacking width can be reduced to be within 7mm, and the uniformity of the film thickness outside the edge removal of 7mm is 3 mu m +/-5%. The utilization area of the 8-inch square sheet can reach more than 98 percent;
comparative example 1:
in this example, a conventional process is adopted, and edge detection is performed, and the specific implementation manner is as follows:
the first step is as follows: the square sheet rotates along with the sheet bearing table, the glue coating spray head moves to a position right above the center of the square sheet, and the photoresist starts to be coated in a spinning mode; the glue amount is 3.2ml, the glue coating speed is 0.8ml/s, the rotation speed of the wafer bearing table is 500-3500 r/min, and the photoresist can be completely coated on the square wafer. As shown in fig. 3.
The second step is that: after the gluing is finished, the square sheets are sent to a hot plate for baking, the baking temperature is 110 ℃, and the baking time is 80 s.
In the comparative example, using the same glue formulation, the width of the pile was about 42mm, the area of utilization of 8 inch square pieces was only about 80%, and the uniformity of the thickness of the trimmed 7mm film was 3 μm + -18%. The results are shown in FIG. 3.
The rotation speed and time, the amount of resist applied, and the rate of resist application may be different from the above parameters in terms of the flow rate, angle, and number of passes of the deburring needle depending on the viscosity coefficient, film thickness, and the like of the resist, but may be modified within the scope of the technical scope of the present invention.
Claims (6)
1. A method for removing glue pile on the edge of a square sheet is characterized by comprising the following steps: the method is used for removing edge stacking glue aiming at the photoresist coated on the square wafer, and specifically comprises the following steps:
(1) the square plate is conveyed to a gluing unit to be coated with photoresist;
(2) when the photoresist is coated, partially removing the photoresist film in the edge area of the wafer by adopting a chemical mode, namely reducing the thickness of the photoresist film in the edge area of the wafer, and controlling the size of the reduced area;
(3) after the edges of the square sheets are thinned, adjusting the rotating speed of the square sheets to 1200r-1400r, and rotating for 5s to enable the thinned edge parts of the square sheets to be re-coated with glue and enable the thickness of a glue film in a thinned area to be consistent with that of the central photoresist;
(4) and conveying the square sheet coated with the photoresist to a hot plate for post-baking treatment.
2. The method for removing the square piece edge stacking glue according to claim 1, wherein: in the step (1), the coated photoresist has a viscosity of 10-30cp, and the thickness of the glue film formed on the glass substrate is 1-5 μm.
3. The method for removing the square piece edge stacking glue according to claim 1, wherein: in the step (2), when the edge stacking glue is removed from the square sheet in a chemical mode: the target removal width is W1, and let POS1 be a point on the diagonal of the square piece, then W1 is the distance from POS1 to the outer corner of the square piece, and let POS2 be a point on the diagonal of the square piece and outside the edge of the square piece (outside the diagonal of the square piece), and a needle spraying chemicals (removal liquid) performs reciprocating scanning between POS1 and POS2, and the photoresist at the edge of the square piece is thinned to 50% -60% of the original thickness by controlling the chemical flow, needle angle, scanning speed and scanning time.
4. The method for removing the square piece edge stacking glue according to claim 3, wherein: in the step (2), the distance between the POS1 and the POS2 is 2-4 mm; when the chemical mode (EBR) is adopted to spray the wine chemicals, the chemical flow, the needle angle, the scanning speed and the scanning time need to be determined according to the thickness, the characteristics and the like of the glue film on the square sheet.
5. The method for removing the square piece edge stacking glue according to claim 3, wherein: the thickness of the photoresist at the edge of the square sheet is reduced to 0.5-2 μm.
6. The method for removing edge bead of glass substrate square sheet according to claim 1, wherein: in the step (4), the baking temperature of the post-baking treatment is 110-.
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CN202011177623.8A CN112162471A (en) | 2020-10-29 | 2020-10-29 | Method for removing glue pile at edge of square sheet |
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CN202011177623.8A CN112162471A (en) | 2020-10-29 | 2020-10-29 | Method for removing glue pile at edge of square sheet |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63234530A (en) * | 1987-03-24 | 1988-09-29 | Nec Corp | Resist periphery removing device |
CN201359681Y (en) * | 2009-03-04 | 2009-12-09 | 北京京东方光电科技有限公司 | Edge photoresist removal device |
CN102380817A (en) * | 2011-10-25 | 2012-03-21 | 上海宏力半导体制造有限公司 | Method for preventing low yield of wafer edge device |
CN102709175A (en) * | 2012-05-23 | 2012-10-03 | 上海宏力半导体制造有限公司 | Forming method of photoresist layer in deep groove process |
CN103913958A (en) * | 2014-03-18 | 2014-07-09 | 京东方科技集团股份有限公司 | Apparatus for removing photoresist at edge of substrate |
CN104362123A (en) * | 2014-10-10 | 2015-02-18 | 中国电子科技集团公司第四十一研究所 | Clamp and method for removing edge accumulated glue during square substrate photoetching |
CN104779178A (en) * | 2014-01-13 | 2015-07-15 | 中芯国际集成电路制造(上海)有限公司 | Bottom anti-reflective coating forming method |
CN208673043U (en) * | 2018-09-04 | 2019-03-29 | 长鑫存储技术有限公司 | A kind of photoresist coating apparatus |
CN210109551U (en) * | 2019-05-09 | 2020-02-21 | 德淮半导体有限公司 | Edge photoresist removing device and photoresist coating device |
-
2020
- 2020-10-29 CN CN202011177623.8A patent/CN112162471A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63234530A (en) * | 1987-03-24 | 1988-09-29 | Nec Corp | Resist periphery removing device |
CN201359681Y (en) * | 2009-03-04 | 2009-12-09 | 北京京东方光电科技有限公司 | Edge photoresist removal device |
CN102380817A (en) * | 2011-10-25 | 2012-03-21 | 上海宏力半导体制造有限公司 | Method for preventing low yield of wafer edge device |
CN102709175A (en) * | 2012-05-23 | 2012-10-03 | 上海宏力半导体制造有限公司 | Forming method of photoresist layer in deep groove process |
CN104779178A (en) * | 2014-01-13 | 2015-07-15 | 中芯国际集成电路制造(上海)有限公司 | Bottom anti-reflective coating forming method |
CN103913958A (en) * | 2014-03-18 | 2014-07-09 | 京东方科技集团股份有限公司 | Apparatus for removing photoresist at edge of substrate |
CN104362123A (en) * | 2014-10-10 | 2015-02-18 | 中国电子科技集团公司第四十一研究所 | Clamp and method for removing edge accumulated glue during square substrate photoetching |
CN208673043U (en) * | 2018-09-04 | 2019-03-29 | 长鑫存储技术有限公司 | A kind of photoresist coating apparatus |
CN210109551U (en) * | 2019-05-09 | 2020-02-21 | 德淮半导体有限公司 | Edge photoresist removing device and photoresist coating device |
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