CN109062010A - Improve the method for photoresist surface roughness - Google Patents

Improve the method for photoresist surface roughness Download PDF

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Publication number
CN109062010A
CN109062010A CN201811060348.4A CN201811060348A CN109062010A CN 109062010 A CN109062010 A CN 109062010A CN 201811060348 A CN201811060348 A CN 201811060348A CN 109062010 A CN109062010 A CN 109062010A
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CN
China
Prior art keywords
photoresist
wafer
photoresist surface
solvent
surface roughness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811060348.4A
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Chinese (zh)
Inventor
成智国
耿文练
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Shanghai Huali Integrated Circuit Manufacturing Co Ltd
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Shanghai Huali Integrated Circuit Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Shanghai Huali Integrated Circuit Manufacturing Co Ltd filed Critical Shanghai Huali Integrated Circuit Manufacturing Co Ltd
Priority to CN201811060348.4A priority Critical patent/CN109062010A/en
Publication of CN109062010A publication Critical patent/CN109062010A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a kind of methods for improving photoresist surface roughness, are related to semiconductor integrated circuit manufacturing technology, comprising: carry out silicic acid anhydride to the crystal column surface after cleaning using HMDS；The cold plate for being sent to even film developing machine through the wafer after silicic acid anhydride is cooled to room temperature, is ω by revolving speed0Spin coating method photoresist is uniformly coated on crystal column surface；With stoving temperature T0The wafer for being coated with photoresist is dried；With rotational speed omega1Wafer after drying is rotated, and is sprayed simultaneously with solvent on photoresist surface, wherein ω1< ω0；And with stoving temperature T1Wafer after spraying is dried again, wherein T1< T0, to improve the roughness on photoresist surface, the subsequent progress of wafer is promoted more evenly, adequately to expose.

Description

Improve the method for photoresist surface roughness
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology more particularly to a kind of sides for improving photoresist surface roughness Method.
Background technique
In semiconductor integrated circuit manufacturing technology, photoetching process is wherein one of committed step.Photoresist is photoetching work The most key material in skill, after photoresist is spin-coated on crystal column surface, it is necessary to it is handled by baking, it will be molten in photoresist Agent evaporation improves photoresist the thickness uniformity and in subsequent etching work so as to improve the adhesion between photoresist and wafer Line width uniformity in skill.
With continuing deeply for photoetching technique node (28nm-20nm-14nm), the thickness of required photoresist is more and more thinner, Uniform ground to photoresist surface and grain defect control require it is also higher and higher, spin coating surface irregularity it is whole or The excessive photoresist of grain defect can all cause the large area of post-exposure figure to fail, to bring to production technology great Economic loss.
Currently, the wafer after spin coating photoresist carries out baking processing in the hot plate of even film developing machine, held by three thimbles The wafer that spin coating has photoresist is carried, so that it is kept the gap of 25~100um with hot plate, to improve the uniformity of stoving temperature.So And the photoresist after coating is with the promotion of stoving temperature, molecular chain movement gradually aggravates, and intermolecular free volume increases, The evaporation rate of middle solvent is also gradually accelerated.When photoresist reaches highest stoving temperature, the evaporation rate of solvent also accordingly reaches To maximum value.The rapid evaporation of solvent very likely will lead to the microstructure that protrusion is presented in photoresist superficial expansion, roughness It greatly increases.Fig. 1 is seen, Fig. 1 is photoresist schematic surface after baking process in the prior art, as shown in Figure 1, being coated on There are microcosmic bulge-structures 300 on the surface of photoresist 200 on wafer 100.Therefore, subsequent to photoetching coating technique itself When bring defect carries out particle detections, these bulge-structures 300 are more easier to cause adverse effect.
In semiconductor integrated circuit manufacturing technology, how to improve the roughness on photoresist surface is a problem.
Summary of the invention
Purpose of the present invention is to provide a kind of methods for improving photoresist surface roughness, comprising: S1: applying hexamethyl Two silicon amine gastral cavity steam (HMDS) carry out silicic acid anhydride to the crystal column surface after cleaning；S2: after through silicic acid anhydride The cold plate that wafer is sent to even film developing machine is cooled to room temperature, and is ω by revolving speed0Spin coating method photoresist is uniform It is coated on crystal column surface；S3: with stoving temperature T0The wafer for being coated with photoresist is dried；S4: with rotational speed omega1Rotation is through step Wafer after rapid S3 drying, and being sprayed simultaneously with solvent on photoresist surface, wherein ω1< ω0；And S5: with stoving temperature T1Wafer after step S4 spray is dried again, wherein T1< T0。
Further, apply 120 DEG C of hmds gastral cavity steam (HMDS) to the wafer after cleaning in step S1 Surface carries out silicic acid anhydride 30s.
Further, photoresist surface is sprayed using solvent identical with the solvent in photoresist in step S4 Leaching.
Further, ω1={ (ω0- 800)~(ω0-500)}r/min。
Further, solvent is sprayed on the bulge-structure on photoresist surface in step S4.
Further, T1={ (T0- 50)~(T0-25)}℃。
In an embodiment of the present invention, by spraying solvent on photoresist surface, bulge-structure is dissolved, and pass through rotation Turn so that the photoresist even spread dissolved on a small quantity, greatly improves the roughness on photoresist surface, raising photoresist table The accuracy of face particle detections；On the other hand the subsequent progress of wafer can be promoted more evenly, adequately to expose, make photoetching offset plate figure More intact is transferred to silicon substrate.
Detailed description of the invention
Fig. 1 is photoresist schematic surface after baking process in the prior art.
Fig. 2 is the flow chart of the method for the improvement photoresist surface roughness of one embodiment of the invention.
Fig. 3 is the process schematic of the improvement photoresist surface roughness of one embodiment of the invention.
Specific embodiment
Below in conjunction with attached drawing, clear, complete description is carried out to the technical solution in the present invention, it is clear that described Embodiment is a part of the embodiments of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field is general Logical technical staff's all other embodiment obtained under the premise of not making creative work belongs to what the present invention protected Range.
In one embodiment of the invention, it is to provide a kind of method for improving photoresist surface roughness, comprising: apply pregnancy Two silicon amine gastral cavity steam (HMDS) of base carries out silicic acid anhydride to the crystal column surface after cleaning；It will be through the crystalline substance after silicic acid anhydride The cold plate that circle is sent to even film developing machine is cooled to room temperature (such as 22 DEG C), is ω by revolving speed0Spin coating method by photoetching Glue is uniformly coated on crystal column surface；With stoving temperature T0The wafer for being coated with photoresist is dried；With rotational speed omega1Rotation is through drying Wafer after dry, and being sprayed simultaneously with solvent on photoresist surface, wherein ω1< ω0；And with stoving temperature T1To through spraying Wafer afterwards is dried again, wherein T1< T0。
Specifically, referring to Fig. 2, Fig. 2 is the stream of the method for the improvement photoresist surface roughness of one embodiment of the invention Cheng Tu, and referring to Fig. 3, Fig. 3 is the process schematic of the improvement photoresist surface roughness of one embodiment of the invention.Such as Fig. 2 With shown in Fig. 3, the method for the improvement photoresist surface roughness includes:
S1: silicic acid anhydride is carried out to the crystal column surface after cleaning using hmds gastral cavity steam (HMDS).
Specifically, in an embodiment of the present invention, using 120 DEG C of hmds gastral cavity steam (HMDS) to cleaning after 100 surface of wafer carry out silicic acid anhydride 30s.
S2: being cooled to room temperature (such as 22 DEG C) for the cold plate for being sent to even film developing machine through the wafer after silicic acid anhydride, It is ω by revolving speed0Spin coating method photoresist is uniformly coated on crystal column surface.
Specifically, industry common standard spin coating method can be used photoresist 200 is equal in one embodiment of the invention It is even to be coated on crystal column surface, the present invention to spin coating method without limitation.ω0It also can be according to the material of the photoresist of practical application Material setting.
S3: with stoving temperature T0The wafer for being coated with photoresist is dried.
Specifically, in one embodiment of the invention, to stoving temperature T0Without limitation, T0It can be according to the photoresist of practical application Material setting.It is as shown in Figure 3 after step S3 drying, the solvent in photoresist 200 on wafer 100 is evaporated, so And the solvent of rapid evaporation will lead to photoetching gel surface molecular chain movement and be further exacerbated by, to make photoresist superficial expansion and hold Microcosmic bulge-structure 300 is easily formed, roughness increases.
S4: with rotational speed omega1The wafer after step S3 drying is rotated, and is sprayed simultaneously with solvent on photoresist surface, Middle ω1< ω0。
Specifically, in step S4 as shown in Figure 3, using solvent identical with the solvent in photoresist to photoresist surface It is sprayed, then the solvent 400 sprayed dissolves the bulge-structure 300 on 200 surface of photoresist, forms the photoetching dissolved on a small quantity Glue, while with rotational speed omega1Rotating wafer, so that the photoresist dissolved on a small quantity is uniformly coated on preceding layer photoresist surface again.
As described above, rotational speed omega1Less than rotational speed omega0, namely with the rotational speed omega relative to standard spin coating method0It is smaller Rotational speed omega1Rotating wafer can make the solvent 400 of spray dissolve the bulge-structure 300 on 200 surface of photoresist, and can make The photoresist dissolved on a small quantity is uniformly coated on preceding layer photoresist surface again, and reduces the loss of litho machine.Specifically, this hair In a bright embodiment, ω1={ (ω0- 800)~(ω0- 500) } r/min namely ω1Between (ω0- 800) r/min to (ω0- 500) between r/min.
Specifically, in an embodiment of the present invention, by the spray of solvent 400 on the bulge-structure 300 on photoresist surface.
S5: with stoving temperature T1Wafer after step S4 spray is dried again, wherein T1< T0。
Specifically, the bulge-structure 300 on 200 surface of photoresist is molten after drying again after step S5 as shown in Figure 3 Agent dissolution, secondary spin-coating film dissolve bulge-structure, and pass through rotation so by spraying solvent on photoresist surface So that the photoresist even spread dissolved on a small quantity, greatly improves the roughness on photoresist surface, photoresist surface is improved The accuracy of particle detections；On the other hand the subsequent progress of wafer can be promoted more evenly, adequately to expose, make photoetching offset plate figure more Intact is transferred to silicon substrate.
As described above, revolving speed T1Less than revolving speed T0, namely with the lower temperature of stoving temperature in opposite step S3 to spray Wafer afterwards is dried again.Specifically, in one embodiment of the invention, T1={ (T0- 50)~(T0- 25) } DEG C namely T1Between (T0- 50) DEG C to (T0- 25) between DEG C.
In this way, in an embodiment of the present invention, by the way that on photoresist surface, bulge-structure is dissolved for solvent spray, and By rotation so that the photoresist even spread dissolved on a small quantity, greatly improves the roughness on photoresist surface, light is improved The accuracy of photoresist surface particles detection；On the other hand the subsequent progress of wafer can be promoted more evenly, adequately to expose, make photoetching Glue pattern it is more intact be transferred to silicon substrate.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution The range of scheme.

Claims (6)

1. a kind of method for improving photoresist surface roughness characterized by comprising
S1: silicic acid anhydride is carried out to the crystal column surface after cleaning using hmds gastral cavity steam (HMDS)；
S2: the cold plate for being sent to even film developing machine through the wafer after silicic acid anhydride is cooled to room temperature, and is ω by revolving speed0 Spin coating method photoresist is uniformly coated on crystal column surface；
S3: with stoving temperature T0The wafer for being coated with photoresist is dried；
S4: with rotational speed omega1The wafer after step S3 drying is rotated, and is sprayed simultaneously with solvent on photoresist surface, wherein ω1 < ω0；And
S5: with stoving temperature T1Wafer after step S4 spray is dried again, wherein T1< T0。
2. the method according to claim 1 for improving photoresist surface roughness, which is characterized in that applied in step S1 120 DEG C of hmds gastral cavity steam (HMDS) carry out silicic acid anhydride 30s to the crystal column surface after cleaning.
3. it is according to claim 1 improve photoresist surface roughness method, which is characterized in that in step S4 use with The identical solvent of solvent in photoresist sprays photoresist surface.
4. the method according to claim 1 for improving photoresist surface roughness, which is characterized in that ω1={ (ω0-800) ~(ω0-500)}r/min。
5. the method according to claim 1 for improving photoresist surface roughness, which is characterized in that by solvent in step S4 Spray is on the bulge-structure on photoresist surface.
6. the method according to claim 1 for improving photoresist surface roughness, which is characterized in that T1={ (T0- 50)~ (T0-25)}℃。
CN201811060348.4A 2018-09-12 2018-09-12 Improve the method for photoresist surface roughness Pending CN109062010A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111983893A (en) * 2020-08-28 2020-11-24 中国科学院微电子研究所 Gluing and photoetching method applied to wafer with steps on surface

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3300624B2 (en) * 1997-01-24 2002-07-08 東京エレクトロン株式会社 Substrate edge cleaning method
US20060241004A1 (en) * 2005-04-21 2006-10-26 Texas Instruments Incorporated Use of blended solvents in defectivity prevention
US20070077352A1 (en) * 2005-10-05 2007-04-05 Samsung Electronics Co., Ltd. Photoresist coating system and method
CN101635258A (en) * 2009-06-09 2010-01-27 上海宏力半导体制造有限公司 Method for preventing warpage of fresh high temperature oxidation (HTO) photo resist
CN102150234A (en) * 2008-11-05 2011-08-10 株式会社东芝 Film-forming apparatus, film-forming method and semiconductor device
US20120193763A1 (en) * 2011-01-28 2012-08-02 Renesas Electronics Corporation Method of manufacturing semiconductor device, semiconductor device and resist coater
US20160056049A1 (en) * 2014-08-25 2016-02-25 I-Shan Ke Wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth, its apparatus and edge-bead removal method by using the same
CN105457855A (en) * 2014-09-25 2016-04-06 苏斯微技术光刻有限公司 Method for coating a substrate with a lacquer and device for planarising a lacquer layer
CN106904567A (en) * 2015-12-23 2017-06-30 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and preparation method thereof, electronic installation
CN107102515A (en) * 2016-02-22 2017-08-29 东京毅力科创株式会社 Substrate processing method using same and substrate board treatment

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3300624B2 (en) * 1997-01-24 2002-07-08 東京エレクトロン株式会社 Substrate edge cleaning method
US20060241004A1 (en) * 2005-04-21 2006-10-26 Texas Instruments Incorporated Use of blended solvents in defectivity prevention
US20070077352A1 (en) * 2005-10-05 2007-04-05 Samsung Electronics Co., Ltd. Photoresist coating system and method
CN102150234A (en) * 2008-11-05 2011-08-10 株式会社东芝 Film-forming apparatus, film-forming method and semiconductor device
CN101635258A (en) * 2009-06-09 2010-01-27 上海宏力半导体制造有限公司 Method for preventing warpage of fresh high temperature oxidation (HTO) photo resist
US20120193763A1 (en) * 2011-01-28 2012-08-02 Renesas Electronics Corporation Method of manufacturing semiconductor device, semiconductor device and resist coater
US20160056049A1 (en) * 2014-08-25 2016-02-25 I-Shan Ke Wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth, its apparatus and edge-bead removal method by using the same
CN105457855A (en) * 2014-09-25 2016-04-06 苏斯微技术光刻有限公司 Method for coating a substrate with a lacquer and device for planarising a lacquer layer
CN106904567A (en) * 2015-12-23 2017-06-30 中芯国际集成电路制造(上海)有限公司 A kind of semiconductor devices and preparation method thereof, electronic installation
CN107102515A (en) * 2016-02-22 2017-08-29 东京毅力科创株式会社 Substrate processing method using same and substrate board treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111983893A (en) * 2020-08-28 2020-11-24 中国科学院微电子研究所 Gluing and photoetching method applied to wafer with steps on surface

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Application publication date: 20181221