CN105810567A - Manufacturing method of polyimide layer - Google Patents
Manufacturing method of polyimide layer Download PDFInfo
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- CN105810567A CN105810567A CN201610307238.8A CN201610307238A CN105810567A CN 105810567 A CN105810567 A CN 105810567A CN 201610307238 A CN201610307238 A CN 201610307238A CN 105810567 A CN105810567 A CN 105810567A
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- film
- polyimide layer
- manufacture method
- semiconductor substrate
- substrate wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
Abstract
The invention provides a manufacturing method of a polyimide layer. A one-step postdevelopment bake step is added between a development step and a solidifying step; a gas which can exist in a coating evenly volatilizes in advance in a low-temperature baking environment of 100-200 DEG C; meanwhile, certain reflow performance of the coating is kept; and tight adhesion to the surface of a semiconductor substrate wafer at the bottom part can be maintained, so that the defect that round spots are finally caused by uneven gas volatilization in the polyimide layer caused by a later solidifying and molding technology is reduced or even eliminated.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to the manufacture method of a kind of polyimide layer.
Background technology
Due to polyimides (Polyimide, PI) heat-resisting quantity, dielectric and the excellent radiation resistance that material is prominent, therefore in microelectronics industry, especially in extensive and super large-scale integration, substantial amounts of application is obtained, layer insulation is carried out when it is used as dielectric layer, stress can be reduced as cushion, improve yield rate；And the impact on device of the environment especially ray can be reduced when it is used as protective layer; particle can also be played shielding action; the soft error (softerror) of minimizing or abatement device; such as coating polyimide protective layer on microelectronic component; can the migration of blocks electrons effectively; prevent device from corroding, increase the moisture resistant ability of device；And when the surface-coated polyimides of chip is as cushion, can effectively prevent the collapsing brokenly of producing due to thermal stress impact.Additionally, due to the linear expansion coefficient of polyimides is close with copper, strong with the bonding force of Copper Foil compound, also it is commonly used for flexible print circuit board.In semiconductor crystal wafer manufacture process, polyimides is alternatively arranged as photoresist and uses, and its resolution is up to submicron order.
At present, the manufacturing process of a kind of typical polyimide layer in semiconductor crystal wafer manufacture process, including:
(1) coating (coat): polyimide precursor composition resin is applied on a semiconductor wafer；(2) (pre-bake) is dried: make the solvent evaporated away in combinations thereof resin to form film；(3) exposure (exposure): exposure, mainly for transferring on film by specific pattern, completes typically via adopting ultraviolet exposure equipment and some photomask；(4) development (developer): adopt developing solution dissolution and remove unexposed part on film, then completes to clean with flushing liquor, just obtains above-mentioned specific pattern；(5) heat cure (cure): heat and be transformed into polyimide resin being coated with film resin, form polyimide layer.
Due in the manufacturing process of above-mentioned polyimide layer, heat cure can be made directly after development step, so that the polyimide precursor composition resin in film is converted into polyimide resin, temperature is typically in more than 350 DEG C, in the process, the gas evaporation (evaporation) of film various piece can not completely the same (non-uniformity), thus the polyimide layer resulted in exists substantial amounts of circular flaw (Circulardefect), as shown at 10 in figure 1, these circular flaws can affect the reliability of successive process and device, it is thus desirable to the manufacture method of a kind of new polyimide layer, these circular flaws are even eliminated to reduce.
Summary of the invention
It is an object of the invention to provide the manufacture method of a kind of polyimide layer, it is possible to reduce circular flaw in the polyimide layer even eliminating final molding.
For solving the problems referred to above, the present invention proposes the manufacture method of a kind of polyimide layer, comprises the following steps:
Coating: polyimides predecessor is coated on semi-conductive substrate wafer to form film；
Exposure: adopt exposure sources and a mask plate that described film is exposed, to be transferred on described film by the pattern on described mask plate；
Development: adopt developer solution to remove unexposed part in described film, and rinse described Semiconductor substrate wafer；
Postdevelopment bake: under 120 DEG C～200 DEG C baking temperatures, the described film after development is toasted；
Solidify: the described film that described postdevelopment bake is crossed solidifies, and makes described film be converted into polyimide layer.
Further, before carrying out described applying step, the surface of described Semiconductor substrate wafer is carried out prerinse process and dries.
Further, before carrying out described step of exposure, first remove the film of described Semiconductor substrate crystal round fringes, then described Semiconductor substrate wafer is placed in 50 DEG C～150 DEG C environment and dries.
Further, the mode of described drying is oven Convective Heating, infrared heating or hot plate heating.
Further, the mode of described postdevelopment bake is oven Convective Heating, infrared heating or hot plate heating.
Further, the temperature of described postdevelopment bake is 100 DEG C～200 DEG C, and baking time is 1min～7min.
Further, the temperature of described postdevelopment bake is 170 DEG C, and baking time is 5min.
Further, before described curing schedule, the described film first described postdevelopment bake crossed carries out thickness measure, and mends glue thickening when film is thin or remove photoresist when thickness thinning.
Further, adopting the described film that described postdevelopment bake is crossed by ultraviolet curing equipment or hot oven to solidify, solidification temperature is 300 DEG C～450 DEG C.
Compared with prior art, technical scheme has following technical effect that
1, between conventional development and curing schedule, a step postdevelopment bake step is added, this step makes the gas in film in advance and uniformly volatilize in 100 DEG C～200 DEG C low-temperature bake environment, it is maintained with the backflow performance that film is certain, it is able to maintain that the Semiconductor substrate crystal column surface tight adhesion with bottom, thus reducing the Postforming Technology that solidifies even eliminated later to be likely to cause the uneven volatilization of gas in polyimide layer and the round dot defect that finally causes.
2, the postdevelopment bake step increased can also remove developer solution and the flushing liquor that film absorbs, and is conducive to the accurate of coating thickness that postdevelopment bake is crossed to measure.
Accompanying drawing explanation
Fig. 1 is the circular flaw figure existed in a polyimide layer in prior art；
Fig. 2 is the manufacture method flow chart of the polyimide layer of the specific embodiment of the invention.
Detailed description of the invention
For making the purpose of the present invention, feature become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described, but, the present invention can realize by different forms, should simply not be confined to described embodiment.
Refer to Fig. 2, the present invention proposes the manufacture method of a kind of polyimide layer, comprises the following steps:
S1, coating: polyimides predecessor is coated on semi-conductive substrate wafer to form film；
S2, exposure: adopt exposure sources and a mask plate that described film is exposed, to be transferred on described film by the pattern on described mask plate；
S3, development: adopt developer solution to remove unexposed part in described film, and rinse described Semiconductor substrate wafer；
S4, postdevelopment bake: under 120 DEG C～200 DEG C baking temperatures, the described film after development is toasted；
S5, solidifies: the described film that described postdevelopment bake is crossed solidifies, and makes described film be converted into polyimide layer.
In step sl, Semiconductor substrate wafer owing to providing is usually the wafer after some retes are processed, some microgranules (particle) likely can be adhered at Semiconductor substrate crystal column surface, the existence of these microgranules can affect coating effect, therefore before coating polyimide predecessor on Semiconductor substrate wafer, preferably, quasiconductor substrate wafer surface is carried out prerinse process and dries, specifically, first Semiconductor substrate wafer is put in chemical tank and soak, to wash the microgranule of Semiconductor substrate crystal column surface residual, then quasiconductor substrate wafer is done dewatering roast process, the steam that during to remove soaking and washing, Semiconductor substrate crystal column surface adheres to, strengthen polyimide film below and cover the adhesive force of Semiconductor substrate crystal column surface.If the particle defects of Semiconductor substrate crystal column surface is very low and in stable, the reasonable situation of Moisture control, prerinse processes step and also can exempt, and to save the time, improves production capacity.Next the coating process of polyimides predecessor can be carried out, polyimides predecessor is typically due to remain containing solvent be in liquid, therefore when coating, centrifugal force during Semiconductor substrate wafer high speed rotating can be utilized, polyimides predecessor is uniformly sprayed at Semiconductor substrate crystal column surface, rotating speed and rotational time need to adjust with concrete technology, for instance spray the polyimides predecessor of 3ml in Semiconductor substrate crystal circle center.Rotating by the relatively low speed of 1000～1500 rpms makes polyimides predecessor be applied to the region from Semiconductor substrate crystal round fringes 5 millimeter for 20 seconds.It is then accelerated to final coating speed rotate about 35 seconds.Adding dead time of about 5 seconds in two processes can improve the even uniform degree of final film forming.
Due to the effect of centrifugal force when step S1 applies, Semiconductor substrate crystal round fringes can assemble unnecessary polyimides predecessor, the unnecessary polyimides predecessor in these edges can become polluter and damage the performance of Semiconductor substrate crystal column surface effective coverage, therefore needed to adopt before the exposure of step S2 and the technique such as scrape and remove the polyimides predecessor that Semiconductor substrate crystal round fringes is unnecessary, to ensure the functional of Semiconductor substrate wafer middle effective area.
After the polyimides predecessor that quasiconductor substrate wafer edge is unnecessary is processed, preferably, drying before Semiconductor substrate wafer with film is exposed, its effect is mainly by relatively low temperature, fully remaining after the coating of volatilization polyimides predecessor solvent, the mobility making film reduces, so that ensuing exposure definition figure, improve the adhesive force of film and Semiconductor substrate wafer, reduce film stress in spin coating process, improve the resistance to mechanical friction, capability of film simultaneously.The mode of described drying can be oven Convective Heating, infrared heating or hot plate heating.Drying the setting of temperature, and the drying time of each temperature spot depends on the thickness of film and the type of heating, temperature selects too low, and in film, the solvent composition of residual is more, and follow-up developing powder is too fast, for graphic definition control less easily；Otherwise, if temperature selects too high, in film, the solvent composition of residual is less, exposure energy that relative needs are bigger, but for graphic definition control preferably.Drying time is not enough, and film viscosity is big, haftplatte phenomenon occurs, it is easy to damage glue, and drying time is long, then glue surface hardening, and heliosensitivity declines, and corrosion stability degenerates.Preferably, the temperature of drying is 50 DEG C～150 DEG C, for instance being 90 DEG C or 100 DEG C, baking time is 2～6 minutes.The baking of two steps or more multistep can be adopted for the drying that thickness is bigger, for instance begin with 50 DEG C～65 DEG C and dry a few minutes, then be warmed up to 90 DEG C～150 DEG C and drying a few minutes.Multistep is dried and solvent can be allowed must to evaporate into outside film more slowly and evenly, to avoid the surface defect being likely to be formed.
The main purpose of the exposure of step S2 is to be exposed on semiconductor crystal wafer by the figure on certain mask plate.When the exposure source light on exposure sources arrives film through this mask plate, the polyimides predecessor in film forms the material being not readily dissolved in developer solution, thus reaching the purpose of Graphic transitions.The exposure energy set on exposure sources and time of exposure depend on the thickness of film.
Step S3 development main purpose is to make graphical presentation, and removes unnecessary polyimides predecessor.The developer solution specifically adopting type of solvent carries out spray development, unexposed part is washed away, exposed portion then leaves pattern because of molecule crosslinked polymerization, in this process, developer solution and flushing liquor respectively need a nozzle, and the drop flowed out in nozzle should very thin, spray range to cover the region from crystal circle center to edge.
The postdevelopment bake main purpose of step S4 is by relatively low temperature, the solvent that fully after volatilization development, film is remaining, improve the adhesive force of film and Semiconductor substrate wafer, reduce the bubble in film, and make film keep certain mobility, and it is unlikely to make some region polyimides predecessor premature cure of film, so that the solidification rate in each region of film is homogeneous in subsequent curing step, and make the incidence rate of round dot defect decline.The mode of described postdevelopment bake is oven Convective Heating, infrared heating or hot plate heating, it is desirable to heat for hot plate, the uniform volatilization being so beneficial in polyimides predecessor gas.Baking temperature and baking time depend on coating thickness, it is preferred that the temperature of described postdevelopment bake is 100 DEG C～200 DEG C, and baking time is 1min～7min.The temperature of such as postdevelopment bake is 170 DEG C, and baking time is 5min, and after tested, the circular flaw rate in the polyimide layer after solidification drops to 0.58%.
After step S4, before the solidification of step S5, it is possible to the described film first described postdevelopment bake crossed carries out thickness measure (inspection).Owing to step S4 can also remove developer solution and the flushing liquor that film absorbs, therefore accuracy of measurement is greatly improved.According to measurement result, glue can be mended when film is thin and thickeies or remove photoresist when thickness thinning afterwards, thus ensureing that the polyimide layer solidifying aftershaping is smooth homogeneous.
The solidification main purpose of step S4 is that after making development, the polyimides predecessor in film is converted to final polyimides, and this curing process can adopt ultraviolet curing process or heat curing process.Wherein, the high-temperature baking that heat curing process is undertaken at 300 DEG C～450 DEG C temperature by being placed on by Semiconductor substrate wafer in hot oven (being also called curing oven), and keep well-ventilated in hot oven, thus the volatile material in solidification process is taken away.Solidification temperature is preferably 350 DEG C～390 DEG C, and the solidification incipient stage carries out linear intensification 3min～5min, keeps more than 30min after reaching final solidification temperature.Cooling after having solidified is preferably also the linear cooling of maintenance, and the Semiconductor substrate wafer such as need be cool below 200 DEG C after taking-up from hot oven again, react with the oxygen in air-prevention, and reduce the mechanical performance of polyimide layer.
In sum, the manufacture method of the polyimide layer of the present invention, a step postdevelopment bake step is added between development and curing schedule, this step makes the gas in film in advance and uniformly volatilize in 100 DEG C～200 DEG C low-temperature bake environment, it is maintained with the backflow performance that film is certain, it is able to maintain that the Semiconductor substrate crystal column surface tight adhesion with bottom, thus the round dot defect reducing the cure process even eliminated later to be likely to cause the uneven volatilization of gas in polyimide layer and ultimately resulting in.
Obviously, invention can be carried out various change and modification without deviating from the spirit and scope of the present invention by those skilled in the art.So, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (8)
1. the manufacture method of a polyimide layer, it is characterised in that comprise the following steps:
Coating: polyimides predecessor is coated on semi-conductive substrate wafer to form film；
Exposure: adopt exposure sources and a mask plate that described film is exposed, to be transferred on described film by the pattern on described mask plate；
Development: adopt developer solution to remove unexposed part in described film, and rinse described Semiconductor substrate wafer；
Postdevelopment bake: under 120 DEG C～200 DEG C baking temperatures, the described film after development is toasted；
Solidify: the described film that described postdevelopment bake is crossed solidifies, and makes described film be converted into polyimide layer.
2. the manufacture method of polyimide layer as claimed in claim 1, it is characterised in that before carrying out described applying step, the surface of described Semiconductor substrate wafer is carried out prerinse process and dries.
3. the manufacture method of polyimide layer as claimed in claim 1, it is characterized in that, before carrying out described step of exposure, first remove the film of described Semiconductor substrate crystal round fringes, then described Semiconductor substrate wafer is placed in 50 DEG C～150 DEG C environment and dries.
4. the manufacture method of polyimide layer as claimed in claim 1, it is characterised in that the mode of described drying is oven Convective Heating, infrared heating or hot plate heating.
5. the manufacture method of polyimide layer as claimed in claim 1, it is characterised in that the mode of described postdevelopment bake is oven Convective Heating, infrared heating or hot plate heating, and baking time is 1min～7min.
6. the manufacture method of the polyimide layer as described in claim 1 or 5, it is characterised in that the temperature of described postdevelopment bake is 170 DEG C, baking time is 5min.
7. the manufacture method of polyimide layer as claimed in claim 1, it is characterised in that before described curing schedule, the described film first described postdevelopment bake crossed carries out thickness measure, and mends glue thickening when film is thin or remove photoresist when thickness thinning.
8. the manufacture method of polyimide layer as claimed in claim 1, it is characterised in that adopting the described film that described postdevelopment bake is crossed by ultraviolet curing equipment or hot oven to solidify, solidification temperature is 300 DEG C～450 DEG C.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111380331A (en) * | 2018-12-29 | 2020-07-07 | 中国科学院微电子研究所 | Microwave drying device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6482629A (en) * | 1987-09-25 | 1989-03-28 | Seiko Epson Corp | Formation of resist pattern |
| JPH05197159A (en) * | 1991-05-24 | 1993-08-06 | Toray Ind Inc | Forming method for polyimide pattern |
| CN101022205A (en) * | 2007-03-21 | 2007-08-22 | 山东华光光电子有限公司 | Method for producing semiconductor laser mask |
| CN103092008A (en) * | 2011-11-07 | 2013-05-08 | 上海华虹Nec电子有限公司 | Non-photosensitive polyimide photo-etching process |
| CN104570593A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method for coating material |
-
2016
- 2016-05-11 CN CN201610307238.8A patent/CN105810567B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6482629A (en) * | 1987-09-25 | 1989-03-28 | Seiko Epson Corp | Formation of resist pattern |
| JPH05197159A (en) * | 1991-05-24 | 1993-08-06 | Toray Ind Inc | Forming method for polyimide pattern |
| CN101022205A (en) * | 2007-03-21 | 2007-08-22 | 山东华光光电子有限公司 | Method for producing semiconductor laser mask |
| CN103092008A (en) * | 2011-11-07 | 2013-05-08 | 上海华虹Nec电子有限公司 | Non-photosensitive polyimide photo-etching process |
| CN104570593A (en) * | 2013-10-29 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Photoetching method for coating material |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111380331A (en) * | 2018-12-29 | 2020-07-07 | 中国科学院微电子研究所 | Microwave drying device |
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