CN114967374A - Wafer developing method - Google Patents
Wafer developing method Download PDFInfo
- Publication number
- CN114967374A CN114967374A CN202210624955.9A CN202210624955A CN114967374A CN 114967374 A CN114967374 A CN 114967374A CN 202210624955 A CN202210624955 A CN 202210624955A CN 114967374 A CN114967374 A CN 114967374A
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- wafer
- developed
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 33
- 238000004381 surface treatment Methods 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000002791 soaking Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention discloses a wafer developing method, which relates to the technical field of semiconductors, and comprises the following steps: obtaining a wafer to be developed, wherein the surface of the wafer to be developed is provided with a photoresist; carrying out surface treatment on the wafer to be developed to enable the photoresist to be in a wet state, so as to obtain a wet wafer after surface treatment; and developing the wet wafer to obtain a developed wafer. By the mode, the developing uniformity is improved, and the developing cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer developing method.
Background
In the integrated circuit manufacturing process, there are high requirements on the uniformity of the wafer development process. In the conventional method for ensuring the development uniformity, development improvement is generally performed on different areas in a wafer respectively, or the development uniformity is improved by improving a stage adsorption device. However, both of the two optimization methods have high cost, long time consumption and poor improvement effect.
Disclosure of Invention
In order to solve the above problem, a wafer developing method according to an embodiment of the present invention is provided, where the wafer developing method includes:
obtaining a wafer to be developed, wherein the surface of the wafer to be developed is provided with a photoresist;
carrying out surface treatment on the wafer to be developed to enable the photoresist to be in a wet state, so as to obtain a wet wafer after surface treatment;
and developing the wet wafer to obtain a developed wafer.
Optionally, obtaining a wafer to be developed includes:
obtaining an original wafer, wherein the surface of the original wafer is provided with the photoresist;
and dehydrating the original wafer to obtain the wafer to be developed.
Optionally, dehydrating the original wafer to obtain the wafer to be developed, including:
baking the original wafer to obtain a baked wafer;
and cooling the baked wafer to obtain the wafer to be developed.
Optionally, cooling the first wafer to obtain the wafer to be developed, including:
and cooling the first wafer through a cold plate to obtain the wafer to be developed.
Optionally, performing surface treatment on the wafer to be developed to change the photoresist into a wet state, so as to obtain a wet wafer after surface treatment, including:
and carrying out first surface treatment or second surface treatment on the wafer to be developed to enable the photoresist to be in a wet state, so as to obtain the wet wafer.
Optionally, performing a first surface treatment on the wafer to be developed to change the photoresist into a wet state, so as to obtain the wet wafer, including:
washing the wafer to be developed through pure water to obtain a first wafer to be developed after washing;
and drying the first wafer to be developed to obtain the wet wafer.
Optionally, performing a first gain process on the cooled wafer to be developed to obtain a gain-processed wafer to be developed, including:
and soaking the wafer to be developed in a developing solution, and obtaining the wet wafer after a preset time.
Optionally, developing the wet wafer to obtain a developed wafer, including:
and developing the wet wafer by the developing solution to obtain a developed wafer.
Optionally, after obtaining the developed wafer, the method further includes:
washing the developing wafer by deionized water to obtain a first washed developing wafer;
and drying the first developing wafer to obtain a dried second developing wafer.
Optionally, after obtaining the spin-dried second developed wafer, the method further includes:
and hardening the second developed wafer to obtain a finished product wafer.
According to the scheme provided by the embodiment of the invention, by obtaining the wafer to be developed, the surface of the wafer to be developed is provided with the photoresist; carrying out surface treatment on the wafer to be developed to enable the photoresist to be in a wet state, so as to obtain a wet wafer after surface treatment; and developing the wet wafer to obtain a developed wafer. The developing cost is reduced while the developing uniformity is improved.
The foregoing description is only an overview of the technical solutions of the embodiments of the present invention, and the embodiments of the present invention can be implemented according to the content of the description in order to make the technical means of the embodiments of the present invention more clearly understood, and the detailed description of the embodiments of the present invention is provided below in order to make the foregoing and other objects, features, and advantages of the embodiments of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the embodiments of the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic flow chart illustrating a wafer developing method according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating comparison of wafer development effects provided by the embodiment of the invention.
Detailed Description
Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention can be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
Fig. 1 is a schematic flow chart illustrating a wafer developing method according to an embodiment of the present invention. As shown in fig. 1, the wafer developing method includes:
step 11, obtaining a wafer to be developed, wherein the surface of the wafer to be developed is provided with a photoresist;
and step 13, developing the wet wafer to obtain a developed wafer.
In the embodiment, by obtaining a wafer to be developed, a photoresist is arranged on the surface of the wafer to be developed; carrying out surface treatment on the wafer to be developed to enable the photoresist to be in a wet state, so as to obtain a wet wafer after surface treatment; and developing the wet wafer to obtain a developed wafer. The developing cost is reduced while the developing uniformity is improved.
In an alternative embodiment of the present invention, step 11 may include:
step 111, obtaining an original wafer, wherein the surface of the original wafer is provided with the photoresist;
and 112, dehydrating the original wafer to obtain the wafer to be developed.
In this embodiment, the original wafer is dehydrated to effectively remove the water adsorbed on the wafer surface, so that a flat and uniform photoresist coating can be obtained to the maximum extent and good adhesion between the photoresist and the wafer can be achieved.
In yet another alternative embodiment of the present invention, step 112 may comprise:
step 1121, baking the original wafer to obtain a baked wafer;
and step 1122, cooling the baked wafer to obtain the wafer to be developed.
Specifically, the first wafer is cooled through a cold plate, and the wafer to be developed is obtained.
In this embodiment, the baking is a post-exposure bake in order to remove most of the solvent in the photoresist and fix the exposure characteristics of the photoresist. Generally, a shorter soft-bake time or lower temperature will result in an increased dissolution rate of the gum in the developer and higher sensitivity, but a reduced contrast. In practice the soft-bake process requires experimental determination by trial and error to optimize contrast while maintaining acceptable sensitivity, typical soft-bake temperatures are 90-100 ℃ for periods ranging from 30 seconds with a hot plate to 30 minutes with an oven.
In yet another alternative embodiment of the present invention, step 12 may comprise:
and 121, performing first surface treatment or second surface treatment on the wafer to be developed to change the photoresist into a wet state, so as to obtain the wet wafer.
As shown in fig. 2, in this embodiment, the left wafer in fig. 2 is a wafer developed by the conventional method, and the right wafer is a wafer developed by the wafer developing method provided in the embodiment of the present invention, as can be seen from the comparison, the maximum thickness of the left wafer is 844 nm, the minimum thickness is 726 nm, the maximum thickness of the right wafer is 820 nm, and the minimum thickness is 756 nm, so it can be seen that the uniformity of the wafer after surface treatment is better, the problem of non-uniformity of wafer development is solved, and at the same time, the cost is low and the efficiency is high.
In yet another alternative embodiment of the present invention, step 121 may comprise:
step 1211, washing the wafer to be developed through pure water to obtain a first wafer to be developed after washing;
and 1212, drying the first wafer to be developed to obtain the wet wafer.
In this embodiment, the wafer to be developed is rinsed by pure water to obtain a rinsed first wafer to be developed, and the rinsed first wafer to be developed is dried to obtain a wet wafer, so that the wetting and surface reaction of the photoresist and the developing solution can be effectively increased, and the developing uniformity is greatly improved, wherein the water temperature of the pure water is between 16 ℃ and 32 ℃, preferably 23.5 ℃, and the developing uniformity is the best after rinsing by using the pure water with the temperature.
In yet another optional embodiment of the present invention, step 121 may further include:
step 1213, soaking the wafer to be developed in a developing solution, and obtaining the wet wafer after a preset time.
In the embodiment, the wafer to be developed is soaked in the developing solution, and after the preset time, the wet wafer is obtained, so that the infiltration and surface reaction of the photoresist and the developing solution can be effectively increased, and the developing uniformity is greatly improved.
In yet another alternative embodiment of the present invention, step 13 may comprise:
and 131, developing the wet wafer through the developing solution to obtain a developed wafer.
In this embodiment, the developer is a chemical solvent that dissolves the soluble regions of the photoresist resulting from exposure.
In another optional embodiment of the present invention, after step 131, the method may further include:
step 132, washing the developed wafer by deionized water to obtain a washed first developed wafer;
step 133, spin-drying the first developed wafer to obtain a spin-dried second developed wafer.
In this embodiment, the deionized water is the deionized water from which the impurities in the form of ions are removed, and the wafer can be developed more clearly by rinsing with the deionized water.
In still another alternative embodiment of the present invention, after step 133, the method may further include:
and 134, hardening the second developed wafer to obtain a finished wafer.
In this embodiment, the film hardening may be performed by thermal baking. The developed glue film is softened and expanded, the adhesive force between the glue film and the surface of the wafer is reduced, and in order to ensure that the next etching process can be smoothly carried out and the photoresist and the surface of the wafer are better bonded, the residual solvent is further evaporated to harden the photoresist, namely, the adhesiveness of the photoresist to the wafer is improved through film hardening treatment, so that preparation is prepared for the next process. Typical film temperatures are 120 to 130 deg.C, which is slightly higher for negative paste temperatures, up to 150 deg.C. The c hardening is usually performed in a hot plate or oven, and the photoresist flows slightly during heating, causing slight deformation of the lithographic pattern.
In the description provided herein, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the embodiments of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects.
Furthermore, those skilled in the art will appreciate that while some embodiments herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that the word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names. The steps in the above embodiments should not be construed as limiting the order of execution unless specified otherwise.
Claims (10)
1. A wafer developing method is characterized by comprising the following steps:
obtaining a wafer to be developed, wherein the surface of the wafer to be developed is provided with a photoresist;
carrying out surface treatment on the wafer to be developed to enable the photoresist to be in a wet state, so as to obtain a wet wafer after surface treatment;
and developing the wet wafer to obtain a developed wafer.
2. The wafer developing method according to claim 1, wherein the obtaining of the wafer to be developed comprises:
obtaining an original wafer, wherein the surface of the original wafer is provided with the photoresist;
and dehydrating the original wafer to obtain the wafer to be developed.
3. The wafer developing method according to claim 2, wherein the step of dehydrating the original wafer to obtain the wafer to be developed comprises:
baking the original wafer to obtain a baked wafer;
and cooling the baked wafer to obtain the wafer to be developed.
4. The wafer developing method according to claim 3, wherein the step of cooling the first wafer to obtain the wafer to be developed comprises:
and cooling the first wafer through a cold plate to obtain the wafer to be developed.
5. The wafer developing method according to claim 1, wherein the surface treatment is performed on the wafer to be developed to change the photoresist into a wet state, so as to obtain a wet wafer after the surface treatment, and the method comprises the following steps:
and carrying out first surface treatment or second surface treatment on the wafer to be developed to enable the photoresist to be in a wet state, so as to obtain the wet wafer.
6. The wafer developing method according to claim 5, wherein the step of performing a first surface treatment on the wafer to be developed to change the photoresist into a wet state to obtain the wet wafer comprises:
washing the wafer to be developed through pure water to obtain a first wafer to be developed after washing;
and drying the first wafer to be developed to obtain the wet wafer.
7. The wafer developing method according to claim 5, wherein the step of performing a first gain process on the cooled wafer to be developed to obtain a gain-processed wafer to be developed comprises:
and soaking the wafer to be developed in a developing solution, and obtaining the wet wafer after a preset time.
8. The wafer developing method according to claim 1, wherein developing the wet wafer to obtain a developed wafer comprises:
and developing the wet wafer by the developing solution to obtain a developed wafer.
9. The wafer developing method according to claim 1, further comprising, after obtaining the developed wafer:
washing the developing wafer by deionized water to obtain a first washed developing wafer;
and drying the first developing wafer to obtain a dried second developing wafer.
10. The wafer developing method according to claim 8, further comprising, after obtaining the spin-dried second developed wafer:
and hardening the second developed wafer to obtain a finished product wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210624955.9A CN114967374A (en) | 2022-06-02 | 2022-06-02 | Wafer developing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210624955.9A CN114967374A (en) | 2022-06-02 | 2022-06-02 | Wafer developing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114967374A true CN114967374A (en) | 2022-08-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210624955.9A Pending CN114967374A (en) | 2022-06-02 | 2022-06-02 | Wafer developing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114967374A (en) |
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2022
- 2022-06-02 CN CN202210624955.9A patent/CN114967374A/en active Pending
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Effective date of registration: 20231227 Address after: Room 1605, Building 1, No. 117 Yingshan Red Road, Huangdao District, Qingdao City, Shandong Province, 266400 Applicant after: Qingdao Haicun Microelectronics Co.,Ltd. Address before: 100191 A03, 10th floor, No. 6 Zhichun Road (Jinqiu International Building), Haidian District, Beijing Applicant before: Zhizhen storage (Beijing) Technology Co.,Ltd. |