487980 五、發明說明（ο 發明之領域 本發明提供一種去除一半導體晶片表面之一光阻層的 方法，尤指一種適用於少量生產中，以快速去除半導體晶 片表面之光阻層的方法。 背景說明 在半導體製程中，當半導體晶片表面的光阻層經過曝 光（Exposure)及曝光後烘烤（p〇st Exposure Bake)的製程 後，便可進行顯影（Development)製程，以使光阻層所轉 移的潛在圖案顯現出來。一般顯影製程包含有三個步驟， 首先以去離子水（DI water)將半導體晶片預濕 (Pre-wet)，然後將顯影液喷灑在半導%體晶片”表面上來進 行混拌顯景》（P u d d 1 e D e v e 1 ο p ) ’最後對半導體晶片表面進 行一去光阻製程，以去除光阻層。 習知去除一半導體晶片表面之一光阻層的方法係先將 整批次（batch)之半導體晶片置入—乾式去光阻反應室 (dry strip chamber)中，進行一灰化（ashing)製程，藉 由一氧氣電漿（02 plasma)或一臭氧電漿（〇3 pUsma)，以 去除半&體曰曰片上之光阻層。通常每批次内含2 4片之該半 導體晶片，因此該灰化製程需耗時約3〇分鐘。487980 V. Description of the invention (ο Field of the invention The present invention provides a method for removing a photoresist layer on the surface of a semiconductor wafer, especially a method suitable for small-scale production to quickly remove the photoresist layer on the surface of a semiconductor wafer. Background In the semiconductor manufacturing process, after the photoresist layer on the surface of the semiconductor wafer is subjected to the process of exposure and exposure exposure, the development process can be performed to make the photoresist layer The transferred potential pattern is revealed. The general development process includes three steps. First, the semiconductor wafer is pre-wet with DI water, and then the developer is sprayed on the surface of the semiconductor wafer. "Pudd 1 e De eve 1 ο p" 'Finally, a photoresist removal process is performed on the surface of the semiconductor wafer to remove the photoresist layer. It is known to remove a photoresist layer on the surface of a semiconductor wafer. First, the entire batch of semiconductor wafers is placed in a dry strip chamber, and an ashing process is performed. A gas plasma (02 plasma) or an ozone plasma (〇3 pUsma) to remove the semi-amplified photoresist layer. Usually each batch contains 24 pieces of the semiconductor wafer, so the ashing The process takes about 30 minutes.
第5頁 487980 五、發明說明（2) 由於光阻層主要是由樹酯（r e s i η )、感光劑 (sensitizer)、以及溶劑（solvent)等三種不同的成分所 組成的碳氫化合物，因此在完成該灰化（a s h i n g )製程後， 會於該半導體晶片表面殘餘聚合物（polymer)、有機化合 物(organic component)以及微粒（particle)等物質。戶斤 以習知方法是接著將該半導體晶片置入一第一清洗槽中， 進行一第一浸泡清洗製程，以去除該半導體晶片表面之聚 合物以及有機化合物。該第一浸泡清洗製程係利用一硫酸 (sulfuric acid, H2S04)與雙氧水(hydrogen peroxide， Η 2〇 2)的混合溶液當作一第一浸泡清洗溶液，且浸泡清洗每 批次該半導體晶片需歷時約1 5分鐘。 接著將該半導體晶片置入一第二清洗槽中，進行一第 二浸泡清洗製程，以去除該半導體晶片表面之該第一浸泡 清洗溶液。該第二浸泡清洗製程係利用一去離子水（D I w a t e r )當作一第二浸泡清洗溶液，且浸泡清洗每批次該半 導體晶片需歷時約1 0分鐘。 之後將該半導體晶片置入一第三清洗槽中，進行一第 三浸泡清洗製程，以去除該半導體晶片表面之有機化合物 以及微粒。該第三浸泡清洗製程係利用一標準清洗溶液 (S C - 1 )當作一第三浸泡清洗溶液，且浸泡清洗每批次該半 導體晶片亦需歷時約1 0分鐘。Page 5 487980 V. Description of the invention (2) Since the photoresist layer is mainly a hydrocarbon compound composed of three different components, such as resin (resi η), sensitizer, and solvent, it is being completed. After the ashing process, substances such as polymers, organic components, and particles will remain on the surface of the semiconductor wafer. A conventional method is to place the semiconductor wafer in a first cleaning tank and perform a first immersion cleaning process to remove the polymer and organic compounds on the surface of the semiconductor wafer. The first immersion cleaning process uses a mixed solution of sulfuric acid (H2S04) and hydrogen peroxide (Η202) as a first immersion cleaning solution, and it takes time to immerse and clean each batch of the semiconductor wafer. About 15 minutes. The semiconductor wafer is then placed in a second cleaning tank, and a second immersion cleaning process is performed to remove the first immersion cleaning solution on the surface of the semiconductor wafer. The second immersion cleaning process uses a deionized water (D I w a t e r) as a second immersion cleaning solution, and the immersion cleaning of each batch of the semiconductor wafer takes about 10 minutes. The semiconductor wafer is then placed in a third cleaning tank, and a third immersion cleaning process is performed to remove organic compounds and particles on the surface of the semiconductor wafer. The third immersion cleaning process uses a standard cleaning solution (SC-1) as a third immersion cleaning solution, and the immersion cleaning of each batch of semiconductor wafers also takes about 10 minutes.
第6頁 487980 五、發明說明（3) 接著將該半導體晶片置入一第四清洗槽中，進行一第 四浸泡清洗製程’以去除該半導體晶片表面之該弟二浸泡 清洗溶液所含之酸液。該第四浸泡清洗製程係利用一去離 子水當作一第四浸泡清洗溶液，且浸泡清洗每批次該半導 體晶片仍需歷時約1 0分鐘。 最後以介於2 0 0 0至2 5 0 0 r p m之間之水平轉速，旋乾該 批次半導體晶片，完成去除光阻層3 2之製程。由於旋乾每 片該半導體晶片需耗時1 5秒’故旋乾整批次之該半導體晶 片需歷時約6分鐘。因此連同灰化製程、各項浸泡清洗製 程以及將整批次之該半導體晶片移槽之手續，習知去除光 阻製程共需耗時約2小時。 然而當產品處於試產（pi lot run)階段時，會先進行 單片或少量之投產。可是習知去光阻製程係針對批次量產 (b a t c h p r 〇 d u c t i ο η )所設計，所以即使僅有單片或少量之 投料量，仍需依批次方式進入機台清洗，需耗費約2小時 的時間才可以完全去除光阻，生產效率極差，並且相對地 提高了生產成本。因此找出一種適用於少量生產中，並能 快速去除半導體晶片表面之光阻層的方法，實為一重要課 發明概述Page 6 487980 V. Description of the invention (3) The semiconductor wafer is then placed in a fourth cleaning tank, and a fourth immersion cleaning process is performed to remove the acid contained in the second immersion cleaning solution on the surface of the semiconductor wafer. liquid. The fourth immersion cleaning process uses a deionized water as a fourth immersion cleaning solution, and it takes about 10 minutes for each batch of semiconductor wafers to be immersed and cleaned. Finally, the batch of semiconductor wafers is spin-dried at a horizontal rotation speed between 2000 and 2500 r p m to complete the process of removing the photoresist layer 32. Since it takes 15 seconds' to spin-dry each semiconductor wafer, it takes about 6 minutes to spin-dry the entire batch of semiconductor wafers. Therefore, together with the ashing process, the various immersion cleaning processes, and the procedures for moving the entire batch of the semiconductor wafer, the conventional photoresist removal process takes about 2 hours. However, when the product is in the pi lot run stage, it will first be put into production in a single piece or a small amount. However, the conventional photoresist removal process is designed for batch production (batchpr 〇ducti ο η), so even if there is only a single piece or a small amount of input, it still needs to enter the machine for cleaning in batch mode, which costs about 2 Only hours can completely remove the photoresist, the production efficiency is extremely poor, and the production cost is relatively increased. Therefore, it is an important lesson to find a method suitable for small-scale production and capable of quickly removing the photoresist layer on the surface of a semiconductor wafer.
第7頁 487980 五、發明說明（4) 因此本發明之主要目的在於提供一種一種適用於少量 生產中’去除半導體晶片表面之光阻層的方法’以解決上 述習知製作方法的問題。 在本發明的最佳實施例中，首先將一半導體晶片置入 一乾式去光阻反應室（dry strip chamber)中，進行一歷 時約6 0秒之乾式去光阻製程’以去除該半導體晶片上之一 光阻層。接著將該半導體晶片固定於一裝置有複數個喷嘴 (nozzle)之濕式清洗反應室（wet clean chamber)中之一 旋轉座上，水平旋轉該半導體晶片，並對該半導體晶片進 行一包含一第一清洗製程、一第二清洗製程、一第三清洗 製程以及一第四清洗製程，歷時約1 4 5秒之濕式清洗製 程。最後進行一歷時約2 0秒之旋乾製程，旋乾該半導體晶 片，以完成該去除光阻層製程。 由於本發明之方法係以將清洗溶液喷灑於旋轉中之半 導體晶片表面的清洗方式，取代習知之浸泡清洗方式，是 以當產品處於試產（p i 1 〇 t r u η )階段進行單片生產時，僅 需不到4分鐘的時間，即可將半導體晶片表面之光阻層去 除。因此試產效率得以大幅提高，進而相對降低生產成 本。 發明之詳細說明Page 7 487980 V. Description of the invention (4) Therefore, the main object of the present invention is to provide a method of 'removing the photoresist layer on the surface of a semiconductor wafer' which is suitable for small-scale production, so as to solve the problem of the conventional manufacturing method. In the preferred embodiment of the present invention, a semiconductor wafer is first placed in a dry strip chamber, and a dry strip process is performed for about 60 seconds to remove the semiconductor wafer. On one photoresist layer. Then, the semiconductor wafer is fixed on a rotating seat in a wet clean chamber equipped with a plurality of nozzles, and the semiconductor wafer is horizontally rotated. A cleaning process, a second cleaning process, a third cleaning process, and a fourth cleaning process are wet cleaning processes that last for about 145 seconds. Finally, a spin-drying process is performed for about 20 seconds, and the semiconductor wafer is spin-dried to complete the photoresist layer removal process. Since the method of the present invention is a cleaning method in which a cleaning solution is sprayed on the surface of a rotating semiconductor wafer, instead of the conventional immersion cleaning method, when the product is in monolithic production when the product is in pilot production (pi 1 trutru η) stage In less than 4 minutes, the photoresist layer on the surface of the semiconductor wafer can be removed. Therefore, the trial production efficiency has been greatly improved, and the production cost has been relatively reduced. Detailed description of the invention
第8頁 487980 五、發明說明（5) a月參考圖一與圖二，圖一與圖二為本發明去除一半導 體晶片表面之一光阻層之方法示意圖。如圖一所示，半導 體晶片30表面包含一光阻層32以及其他元件（未顯示）。由 於其他元件之形成並非本發明之重點，故不在此贅述。首 先將半導體晶片30置入一乾式去光阻反應室（dry strip chamber)中，於180至2 〇 (rc之溫度下進行一乾式去光阻製 程。該，式去光阻製程係為一歷時約6〇秒之灰化（ashing) 製程，藉由一氧氣電漿（〇2 plasma)或一臭氧電漿（〇3 plasma)，以去除半導體晶片30上之光阻層32。 由於光阻層32主要是由樹S旨（resin)、感光劑 (sensitizer)、以及溶劑（s〇ivent)等三種不同的成分所 組成的碳氫化合物，因此會於該半導體晶片表面殘餘聚合 物（polymer)、有機化合物（organic component)以及微粒 (particle)等物質。在完成該灰化（ashing)製程後，如圖 二所示，接著將半導體晶片3 0固定於一裝置有至少一第一 喷嘴（nozzle) 34、一第二喷嘴36與一第三喷嘴38之濕式清 洗反應室（wet clean chamber)中之一旋轉座4 0上，並水 平旋轉半導體晶片30。其中，第一噴嘴34、第二喷嘴36與 第三喷嘴3 8係於後續清洗製程中，用以分別喷灑各項清洗 製程所需之清洗溶液於半導體晶片3 0表面，因此第一喷嘴 3 4、第二噴嘴3 6與第三喷嘴3 8亦可為裝置於一輸出管之開 口端的同一喷嘴，而該輸出管則係分別連接以複數個清洗 溶液之供給裝置。Page 8 487980 V. Description of the invention (5) Refer to Figures 1 and 2 for a month. Figures 1 and 2 are schematic diagrams of the method for removing a photoresist layer on half of the surface of a semiconductor wafer according to the present invention. As shown in FIG. 1, the surface of the semiconductor wafer 30 includes a photoresist layer 32 and other components (not shown). Since the formation of other components is not the focus of the present invention, it will not be repeated here. First, the semiconductor wafer 30 is placed in a dry strip chamber, and a dry strip process is performed at a temperature of 180 to 200 (rc). The process of the strip process is one duration. The ashing process of about 60 seconds uses an oxygen plasma or an ozone plasma to remove the photoresist layer 32 on the semiconductor wafer 30. Because of the photoresist layer 32 is mainly a hydrocarbon compound composed of three different components, such as resin, sensitizer, and solvent. Therefore, residual polymer, organic Organic components, particles, etc. After the ashing process is completed, as shown in Figure 2, the semiconductor wafer 30 is then fixed to a device with at least one first nozzle 34 A second nozzle 36 and a third nozzle 38 in one of the wet clean reaction chambers (wet clean chamber) on a rotating seat 40 and horizontally rotate the semiconductor wafer 30. Among them, the first nozzle 34, the second nozzle 36 Tied with the third nozzle 3 8 In the cleaning process, the cleaning solution required for each cleaning process is sprayed on the surface of the semiconductor wafer 30, so the first nozzle 34, the second nozzle 36, and the third nozzle 38 can also be output by the device. The open end of the tube is the same nozzle, and the output tube is connected to a supply device for a plurality of cleaning solutions, respectively.
487980 五、發明說明（6) 接著在半導體晶片30的水平轉速約介於5 0 0至2 5 0 0rpm 之間之條件下，對半導體晶片3 0進行一利用一内含臭氧 (ozone, 03)之去離子水（deionized water, DI water)’ 或一硫酸（sulfuric acid, H2S04)與雙氧水（hydr〇gerl peroxide，Η 20 2)的混合溶液當作〆第一清洗溶液，且歷時 約4 0秒之第一清洗製程，將該第一清洗溶液經由第一喷嘴 3 4喷灑於半導體晶片3 0之表面，以去除半導體晶片3 0表面 之聚合物（polymer)以及有機化合物（orSanic component) ° 之後在半導體晶片3 0的水平轉速約介於1 0 0 0至 2 0 0 0 rpm之間之條件下，對半導體晶片3 0進行一利用一去 離子水當作一第二清洗溶液，且歷時約2 0秒之第二清洗製 程，以去除半導體晶片3 0表面之該第，清洗溶液。 然後再於半導體晶片3 0的水平轉速約介於5 0 0至 2 5 0 0 rpm之間之條件下，進行一利用〆氣水（amm〇nia，， NH 3)與雙氧水的混合溶液，或一標準清洗溶液（SC-1 )當作 一第三清洗溶液，且歷時約4 0秒之第彡清，製程’將該第 三清洗溶液經由第二喷嘴3 6噴灑於半導.體晶片3 0之表面’ 以去除半導體晶片30表面之微粒（particle) ° 之後於半導體晶片30的水平轉速約介於5⑽至2〇〇〇rpm487980 V. Description of the invention (6) Next, under the condition that the horizontal rotation speed of the semiconductor wafer 30 is between 500 and 2 500 rpm, the semiconductor wafer 30 is subjected to a utilization of ozone (ozone, 03). Deionized water (DI water) 'or a mixed solution of sulfuric acid (H2S04) and hydrogen peroxide (HdrOgerl peroxide (Η20 2)) is used as the first cleaning solution for about 40 seconds. In the first cleaning process, the first cleaning solution is sprayed on the surface of the semiconductor wafer 30 through the first nozzle 34 to remove the polymer and the organic compound (orSanic component) on the surface of the semiconductor wafer 30. Under the condition that the horizontal rotation speed of the semiconductor wafer 30 is between 100 and 2000 rpm, a deionized water is used as a second cleaning solution for the semiconductor wafer 30, and it lasts for about A second cleaning process of 20 seconds to remove the first cleaning solution on the surface of the semiconductor wafer 30. Then, under the condition that the horizontal rotation speed of the semiconductor wafer 30 is between 500 and 2500 rpm, a mixed solution of tritium water (ammonia, NH 3) and hydrogen peroxide is performed, or A standard cleaning solution (SC-1) is used as a third cleaning solution, and the third cleaning solution lasts about 40 seconds. The process' sprays this third cleaning solution on the semiconductor via the second nozzle 36. Surface of 0 'to remove particles on the surface of the semiconductor wafer 30 ° After the horizontal rotation speed of the semiconductor wafer 30 is between about 5 ⑽ to 2000 rpm
第10頁 487980 、發明說明（7) ，間之條件下，進行一利用去離子水（DI water)當作一 ^四β洗溶液，且歷時約2 0秒之第四清洗製糕，將該第四 清洗溶液經由第三喷嘴3 8喷灑於半導體晶片3 〇之表面，以 去除半導體晶片3 0表面之該第三清洗溶液。 最後以介於2 0 0 0至2 5 0 0 r p m之間之水平轉速，旋乾半 導體晶片3 0，完成去除光阻層3 2之製程。由於此旋乾製程 僅歷時2 0秒，故本發明去除光阻層3 2之製程共耗時將近3 分鐘。 ιρ 在本發明之另一實施例中，更可以在進行完灰化製程 後，對半導體晶片30進行一利用SC-1當作清洗溶液，且歷 時約30秒之清洗製程，將該清洗溶液喷灑於半導體晶片3〇 之表面，以去除半導體晶片3 〇表面之聚合物、有機化合物 以及微粒，並隨後以去離子水清洗半導體晶片3 0之表面， 以於耗時僅1 5秒之條件下，去除殘餘之第二清洗溶液。最 後再以介於2 0 0 0至2 5 0 0rpm之間之水平轉速旋乾半導體晶 片3 0，完成去除光阻層3 2之製程，則連同灰化製程在内， 此去除光阻層3 2之製程所花費時間更可縮至約2分鐘。 相較於習知技術，由於本發明之方法係以將清洗溶液 喷灑於旋轉中之半導體晶片表面的清洗方式，取代習知之 浸泡清洗方式，是以當產品處於試產（p i 1 01 r u η )階段進 行單片生產時，僅需約4分鐘的時間，即可將半導體晶片Page 10 487980, description of the invention (7), under the condition, a fourth washing cake using DI water as a ^ 4 β washing solution, which lasts about 20 seconds, The fourth cleaning solution is sprayed on the surface of the semiconductor wafer 30 through the third nozzle 38 to remove the third cleaning solution on the surface of the semiconductor wafer 30. Finally, the semiconductor wafer 30 is spin-dried at a horizontal speed between 2000 and 2500 r p m to complete the process of removing the photoresist layer 32. Since the spin-drying process only takes 20 seconds, the process of removing the photoresist layer 32 according to the present invention takes a total of nearly 3 minutes. ιρ In another embodiment of the present invention, after the ashing process is performed, the semiconductor wafer 30 may be subjected to a cleaning process using SC-1 as a cleaning solution, which lasts for about 30 seconds, and the cleaning solution is sprayed. Sprinkle on the surface of the semiconductor wafer 30 to remove the polymer, organic compounds, and particles on the surface of the semiconductor wafer 30, and then clean the surface of the semiconductor wafer 30 with deionized water in a time-consuming condition of only 15 seconds. To remove the remaining second cleaning solution. Finally, the semiconductor wafer 30 is spin-dried at a horizontal rotation speed between 2000 and 2500 rpm to complete the process of removing the photoresist layer 32. The photoresist layer 3 is removed together with the ashing process. The process time of 2 can be shortened to about 2 minutes. Compared with the conventional technology, the method of the present invention uses a cleaning method in which a cleaning solution is sprayed on the surface of a rotating semiconductor wafer, instead of the conventional immersion cleaning method. When the product is in trial production (pi 1 01 ru η ) Stage for monolithic production, the semiconductor wafer can be processed in about 4 minutes
第11頁 487980 五、發明說明（8) 表面之光阻層去除。此外，本發明更可藉由複數種清洗溶 液的搭配與選擇，而將去除光阻層之製程所花費時間縮至 約2分鐘。因此試產效率得以大幅提高，則生產成本亦相 對隨之降低，進而提昇產品競爭力。 以上所述僅本發明之較佳實施例，凡依本發明申請專 利範圍所做之均等變化與修飾，皆應屬本發明專利之涵蓋 範圍。 487980 圖式簡單說明 圖示之簡單說明 圖一與圖二為本發明去除一半導體晶片表面之一光阻 層之方法示意圖。 圖示之符號說明 30 半 導體晶片 32 光阻層 34 第 一喷嘴 36 第二喷嘴 38 第 三喷嘴 40 旋轉座Page 11 487980 V. Description of the invention (8) The photoresist layer on the surface is removed. In addition, the present invention can further reduce the time taken for the process of removing the photoresist layer to about 2 minutes by combining and selecting a plurality of cleaning solutions. Therefore, the trial production efficiency can be greatly improved, and the production cost will be relatively reduced accordingly, which will increase the competitiveness of the product. The above are only the preferred embodiments of the present invention, and all equivalent changes and modifications made in accordance with the scope of the patent application of the present invention shall fall within the scope of the patent of the present invention. 487980 Brief description of the diagrams Brief description of the diagrams Figures 1 and 2 are schematic diagrams of a method for removing a photoresist layer on the surface of a semiconductor wafer according to the present invention. Explanation of symbols in the diagram 30 Semiconductor chip 32 Photoresist layer 34 First nozzle 36 Second nozzle 38 Third nozzle 40 Rotary seat