CN111983893A - Gluing and photoetching method applied to wafer with steps on surface - Google Patents
Gluing and photoetching method applied to wafer with steps on surface Download PDFInfo
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- CN111983893A CN111983893A CN202010889758.0A CN202010889758A CN111983893A CN 111983893 A CN111983893 A CN 111983893A CN 202010889758 A CN202010889758 A CN 202010889758A CN 111983893 A CN111983893 A CN 111983893A
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004026 adhesive bonding Methods 0.000 title claims abstract description 12
- 238000001259 photo etching Methods 0.000 title abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 41
- 239000003292 glue Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000001459 lithography Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0209—Multistage baking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention relates to the technical field of photoetching technology, in particular to a gluing and photoetching method applied to a wafer with steps on the surface, which comprises the following steps of performing tackifying treatment on the surface of the wafer; gluing the wafer subjected to tackifying treatment to form a photoresist layer on the surface of the wafer; baking the photoresist layer for the first time; and baking the photoresist layer subjected to the first baking for the second time, wherein the temperature of the baking for the second time is lower than that of the baking for the first time. When the surface of the wafer has relatively large fluctuation (for example, the step height is more than 5um), bubbles are easily formed at the step after the rotary gluing. The invention removes the air bubbles by adding the second baking, and the developing effect is not influenced.
Description
Technical Field
The invention relates to the technical field of photoetching processes, in particular to a gluing and photoetching method applied to a wafer with steps on the surface.
Background
Photoetching is a key process in integrated circuit manufacture, which transfers a pattern prepared on a mask plate in advance to a substrate by utilizing the principle of photochemical reaction, so that selective etching and ion implantation become possible. Photoetching is a crucial link in the preparation process of the micro-nano device; the preparation of semiconductor devices, photoelectric devices and micro-electromechanical systems is not independent of photoetching technology.
At present, when a photoetching process is carried out on a substrate according to a standard process photoetching, as shown in fig. 1, because a larger step appears on the surface of the substrate, bubbles are easily generated at the step after gluing, and because the bubble area loses support, the bubble area can be broken in the subsequent process, so that bad spots can be directly formed, and further the imaging quality is influenced.
Disclosure of Invention
In order to overcome the technical problems, the invention provides a glue coating and photoetching method applied to a wafer with steps on the surface, which can remove bubbles and simultaneously can not influence the developing effect.
In order to achieve the above object, the present invention provides a glue spreading method applied to a wafer with a step on the surface, comprising the following steps:
performing tackifying treatment on the surface of the wafer;
gluing the wafer subjected to tackifying treatment to form a photoresist layer on the surface of the wafer;
baking the photoresist layer for the first time;
and baking the photoresist layer subjected to the first baking for the second time, wherein the temperature of the baking for the second time is lower than that of the baking for the first time.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic structural diagram of a patterned photoresist layer in the prior art;
FIG. 2 is a schematic structural diagram of a patterned photoresist layer according to an embodiment of the invention.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
The embodiment of the invention relates to a preparation method of a graphical photoresist layer, which comprises the following steps:
1) performing tackifying treatment on the surface of a wafer, wherein the wafer is a wafer with steps on the surface;
specifically, a tackifier, which is Hexamethyldisilazane (HMDS), is coated on the surface of the wafer. In this process, the wafer is first transferred to a reaction chamber, which is a sealed structure having a hot plate at the bottom for heating the wafer, typically at a temperature of 90-150 ℃. When the wafer is sent into the cavity, the cavity is vacuumized, and the cavity is simultaneously subjected to vacuum detection, so that the HMDS is prevented from being leaked, and pollution to people and the environment is avoided. And then the HMDS is carried into the reaction cavity by the nitrogen to react with the wafer placed in the cavity, so that the surface state of the wafer is changed from hydrophilicity to hydrophobicity. The specific reaction process is as follows:
the reaction time is generally between 60s and 300s, and the main reason for performing this step before coating is that the photoresist is hydrophobic, and the untreated wafer is hydrophilic, so that the photoresist cannot be well adhered to the wafer, coating defects occur, and post-lithography pattern peeling easily occurs. 2) Gluing the wafer subjected to tackifying treatment to form a photoresist layer on the surface of the wafer;
specifically, the wafer is first rotated at a certain rotation speed, and meanwhile, the photoresist is sprayed on the wafer for a certain time, and in the embodiment of the present invention, the time for coating the photoresist is 20 to 25 seconds. Compared with the traditional process, the invention reduces the gluing time, reduces the glue consumption of a single wafer and can eliminate glue residue on the back surface of the wafer. And then, standing the wafer for a certain time, wherein the standing time of the wafer is 25-35 seconds in the embodiment of the invention, so that the standing time is increased, and the number of bubble defects on the surface of the wafer can be reduced. Then, carrying out glue homogenizing operation on the wafer, wherein the glue homogenizing operation is divided into three steps, firstly, adjusting the rotating speed of the wafer to be a lower value, and carrying out first-step glue homogenizing for a certain time; then adjusting the rotating speed of the wafer to a higher rotating speed, and carrying out second-step glue homogenizing for a certain time; and finally, adjusting the rotation speed of the wafer to an intermediate rotation speed, carrying out third step of glue homogenizing for a certain time, and finishing the glue homogenizing operation. In one embodiment of the present invention, the wafer is sprayed at 500RPM for 20 s. The rotating speed of the glue homogenizing is divided into three steps in sequence, wherein the rotating speed and the time are respectively 800RPM and 17 s; 4000RPM, time 5 s; 1500RPM, time 55s, rest time 30 s. In other different thick film processes, one skilled in the art can use other parameters as desired. When the wafer rotating speed in the first step is lower than that in the third step, bubbles can be further reduced, and the yield is improved.
As an example, the photoresist layer may be a positive photoresist layer. After the positive photoresist layer is exposed, the photoresist in the exposed area can be removed by using a developing solution.
3) Baking the photoresist layer for the first time;
specifically, the wafer with the surface covered with the photoresist is baked by adopting a constant-temperature hot plate baking mode, the baking in the step is used for evaporating an organic solvent in the photoresist, and the temperature of the hot plate and the baking time can be automatically adjusted by a person skilled in the art according to needs. However, the temperature of this step is not too high, and the time is not too long, which may affect the developing result.
In one embodiment of the present invention, the first baking temperature is 110 ℃ and the first baking time is 90 s. Other parameters may be used as desired by one of ordinary skill in the art.
4) Baking the photoresist layer after the first baking for the second time;
because the surface of the wafer is provided with the step with the height larger than 5um, when the wafer is coated with glue in a rotating mode, some gas is sealed below the photoresist at the step, exposure is carried out if the gas is not removed, and finally, the final photoetching result has a bubbling defect and the product yield is influenced. The second step of baking of the invention can well remove the bubbles at the step.
Specifically, the wafer with the photoresist covering the surface is baked by using a constant-temperature hot plate baking mode, and it is worth mentioning that the too long baking time makes the development after exposure difficult and the development cannot be performed completely, so that the embodiment does not prolong the time of the first baking to remove bubbles, but adds the second baking step alone and adjusts the second baking temperature, thereby removing bubbles and not affecting the development.
Wherein the temperature of the second baking is 80-110 ℃, the temperature of the second baking is lower than that of the first baking, and if the temperature of the second baking is higher than that of the first baking, the final development result is influenced;
it is worth mentioning that the length of the baking time will affect the bubble removal effect, and if the baking time is too short, the bubbles will not be completely removed, and if the baking time is too long, the developing difficulty will be increased, so the time of the second baking is greatly shortened compared with the time of the first baking, preferably 100-.
In one embodiment of the invention, the baking temperature of the second baking is 90 ℃ and the baking time is 120s, and in other embodiments, the baking time of the second baking can also be 100 seconds or 300 seconds. Other parameters may be used as desired by one of ordinary skill in the art.
5) Exposing the photoresist layer by using a mask plate to form an exposure area in the photoresist layer;
6) baking the exposed photoresist layer for the third time;
specifically, the baking temperature of the third baking is 110 ℃ and the baking time is 90 ℃. For I-Line lithography, the main effect of this step is to improve the standing wave effect at the side of the lithographic pattern. Since light has a wave-particle duality during propagation, the patterned after the photolithography, if directly developed, will have a sidewall with a shape of a positive spin curve. To obtain steep sidewalls, the wafer needs to be baked after exposure. Similarly, the baking is also performed by using a constant-temperature hot plate to improve the appearance of the side wall of the graph. Other parameters may be used as desired by one of ordinary skill in the art.
7) And developing the photoresist layer baked for the third time to remove the photoresist in the exposure area.
Specifically, the developing solution is sprayed to the whole wafer through the spray head, and when the developing solution is fully distributed, the wafer is in a static state. The stage is a reaction stage of the developing solution and the photosensitive photoresist, the reaction time can directly influence the developing effect, generally 30-300 s can be adopted, and the specific time can be adjusted according to actual conditions. After the development is finished, the fixing process is entered. In the process, deionized water can be sprayed to the surface of the wafer through the spray head, the wafer can rotate at a high speed, the deionized water is thrown to the whole wafer, and the developing solution and the developing by-products are flushed out of the wafer through centrifugal force. Therefore, the rotation speed will affect the rinsing effect, and the developing by-products will cause defects on the wafer surface if they cannot be completely rinsed out, which will affect the yield. The speed is typically between 1500rpm and 3000 rpm.
As shown in fig. 1-2, comparing the photoresist layer formed by the conventional scheme with the photoresist layer formed by the scheme of the present application, it can be seen that the photoresist layer formed by the conventional scheme is easy to generate bubbles 100 at the step, and the bubbles are removed by adding the second baking, and the development is not affected.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (8)
1. A gluing method applied to a wafer with steps on the surface is characterized by comprising the following steps:
performing tackifying treatment on the surface of the wafer;
gluing the wafer subjected to tackifying treatment to form a photoresist layer on the surface of the wafer;
baking the photoresist layer for the first time;
and baking the photoresist layer subjected to the first baking for the second time, wherein the temperature of the baking for the second time is lower than that of the baking for the first time.
2. A paste coating method applied to a wafer having a step on its surface according to claim 1, wherein the paste coating step comprises:
rotating the wafer, and coating the wafer by adopting a spraying rotation type;
standing the coated wafer;
and rotating the wafer to carry out glue homogenizing.
3. A paste applying method to a wafer having a step on a surface thereof according to claim 2, wherein said step of spreading the paste comprises:
firstly, adjusting the rotating speed of a wafer to be a first rotating speed, and carrying out first-step glue homogenizing;
then adjusting the rotation speed of the wafer to a second rotation speed, and carrying out second-step glue homogenizing;
and finally, adjusting the rotation speed of the wafer to a third rotation speed, and carrying out third step of glue homogenizing.
4. A method of applying paste to a wafer having a step thereon according to claim 3, wherein said first rotation speed is less than a third rotation speed, and said third rotation speed is less than said second rotation speed.
5. A photolithography method, comprising the glue spreading method applied to a wafer with a step on the surface according to any one of 1 to 4, further comprising the following steps after the second baking is performed:
exposing the photoresist layer by using a mask plate to form an exposure area in the photoresist layer;
baking the exposed photoresist layer for the third time;
and developing the photoresist layer baked for the third time to remove the photoresist in the exposure area.
6. The photolithography method according to claim 5, wherein the temperature of the first baking is 90 to 110 ℃ and the temperature of the second baking is 80 to 110 ℃.
7. The lithography method as claimed in claim 5, wherein the time of the first baking is 60-110s, and the temperature of the second baking is 100-300 s.
8. The lithography method according to claim 5, wherein said first baking and said second baking are both baking using a hot plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010889758.0A CN111983893A (en) | 2020-08-28 | 2020-08-28 | Gluing and photoetching method applied to wafer with steps on surface |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010889758.0A CN111983893A (en) | 2020-08-28 | 2020-08-28 | Gluing and photoetching method applied to wafer with steps on surface |
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| CN111983893A true CN111983893A (en) | 2020-11-24 |
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| CN202010889758.0A Pending CN111983893A (en) | 2020-08-28 | 2020-08-28 | Gluing and photoetching method applied to wafer with steps on surface |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112666800A (en) * | 2020-12-31 | 2021-04-16 | 深圳市芯思杰联邦国际科技发展有限公司 | Photoetching method |
| CN114232104A (en) * | 2021-11-18 | 2022-03-25 | 浙江大学杭州国际科创中心 | Silicon carbide seed crystal bonding method |
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| US5174857A (en) * | 1990-10-29 | 1992-12-29 | Gold Star Co., Ltd. | Slope etching process |
| CN101078890A (en) * | 2006-05-22 | 2007-11-28 | 中芯国际集成电路制造(上海)有限公司 | Method for eliminating air bubble from photoresist and stud bump making method |
| CN101893823A (en) * | 2009-05-21 | 2010-11-24 | 中芯国际集成电路制造(北京)有限公司 | Method for preventing damage of photoresist layer graph |
| CN103576466A (en) * | 2012-07-24 | 2014-02-12 | 无锡华润上华半导体有限公司 | Photoetching method |
| CN106941075A (en) * | 2017-03-08 | 2017-07-11 | 扬州国宇电子有限公司 | The trench schottky surface planarisation processing technology of semiconductor chip |
| CN107731904A (en) * | 2017-10-11 | 2018-02-23 | 成都海威华芯科技有限公司 | A kind of wafer dorsal pore photoresist fill method |
| CN109062010A (en) * | 2018-09-12 | 2018-12-21 | 上海华力集成电路制造有限公司 | Improve the method for photoresist surface roughness |
| CN110161803A (en) * | 2019-06-10 | 2019-08-23 | 浙江水晶光电科技股份有限公司 | Improve the photolithography method of photoresist and substrate adhesiveness |
-
2020
- 2020-08-28 CN CN202010889758.0A patent/CN111983893A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5174857A (en) * | 1990-10-29 | 1992-12-29 | Gold Star Co., Ltd. | Slope etching process |
| CN101078890A (en) * | 2006-05-22 | 2007-11-28 | 中芯国际集成电路制造(上海)有限公司 | Method for eliminating air bubble from photoresist and stud bump making method |
| CN101893823A (en) * | 2009-05-21 | 2010-11-24 | 中芯国际集成电路制造(北京)有限公司 | Method for preventing damage of photoresist layer graph |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112666800A (en) * | 2020-12-31 | 2021-04-16 | 深圳市芯思杰联邦国际科技发展有限公司 | Photoetching method |
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| CN114232104A (en) * | 2021-11-18 | 2022-03-25 | 浙江大学杭州国际科创中心 | Silicon carbide seed crystal bonding method |
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