CN110161803A - Improve the photolithography method of photoresist and substrate adhesiveness - Google Patents
Improve the photolithography method of photoresist and substrate adhesiveness Download PDFInfo
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- CN110161803A CN110161803A CN201910499184.3A CN201910499184A CN110161803A CN 110161803 A CN110161803 A CN 110161803A CN 201910499184 A CN201910499184 A CN 201910499184A CN 110161803 A CN110161803 A CN 110161803A
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- substrate
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- adhesiveness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
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- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The present invention provides a kind of photolithography methods for improving photoresist and substrate adhesiveness, are related to Photolithography Technology field, the photoresist and the photolithography method of substrate adhesiveness provided by the invention of improving includes toasting to substrate；Substrate after baking is subjected to spin coating processing；Processing is exposed to the substrate after spin coating；It is dried after being exposed to the substrate after exposure；Standing cooling is carried out to the substrate dried after exposure；Develop to substrate.The photolithography method provided by the invention for improving photoresist and substrate adhesiveness is without using substrate surface tackifier, by before spin coating to the baking of substrate, and the standing after the baking and baking after exposure is cooling, the adhesiveness between substrate and photoresist can be effectively raised, meet technique requirement, increases equipment mould group without additional.
Description
Technical field
The present invention relates to Photolithography Technology fields, more particularly, to a kind of photoetching for improving photoresist and substrate adhesiveness
Method.
Background technique
In semiconductor technology and micro-nano technology field, photoetching process is indispensable processing link.Traditional photoetching
Technique includes three gluing, exposure, development major processing steps.Photoresist is uniformly coated to substrate surface first, then is led to
Overexposure ray machine exposure mask figure realizes mask pattern the transfer on from mask plate to substrate finally by development.
In a lithographic process, it will do it substrate tackified finish, before spin coating usually to increase the bonding of photoresist and substrate
Degree, thus figure deformation or peeling during avoiding lithography process.In general semiconductor fabrication processes, usually using pregnancy
The tackified finish of base disilazane progress substrate surface.It is general to be changed using gas phase at the hot plate linging progress substrate surface of counterdie
It is kind, but this needs to be transformed glue spreader increase module, and increases hot plate occupancy.And the method for using rotation linging carries out
When processing, and because process easily causes substrate surface particle contamination, linging uneven, for the dosage of hexamethyldisilazane
Larger equal shortcomings are received without being processed quotient.
Therefore, how a kind of improvement photoresist for avoiding the tackifier such as hexamethyldisilazane from using is provided and substrate adheres to
The photolithography method of degree is one of those skilled in the art's technical problem to be solved.
Summary of the invention
The purpose of the present invention is to provide a kind of photolithography methods for improving photoresist and substrate adhesiveness, without using substrate
Surface thickening agent has good adhesiveness between substrate and photoresist, increase equipment mould group without additional.
To achieve the above object, the present invention the following technical schemes are provided:
The present invention provides a kind of photolithography method for improving photoresist and substrate adhesiveness, comprising:
Substrate is toasted；
Substrate after baking is subjected to spin coating processing；
Processing is exposed to the substrate after spin coating；
It is dried after being exposed to the substrate after exposure；
Standing cooling is carried out to the substrate dried after exposure；
Develop to substrate.
It is further, described that substrate is toasted, comprising:
It is 160-180 DEG C that baking temperature, which is arranged, baking time 50-80s.
It is further, described that substrate is toasted, comprising:
The substrate is attached using heating board to be toasted.
Further, it is described substrate is toasted after, and before the substrate by after baking carries out spin coating processing,
Further include:
The substrate is cooled to 20-24 DEG C.
Further, the substrate by after baking carries out spin coating processing, comprising:
After toasting to the substrate in 60s, spin coating processing is carried out to the substrate.
Further, before the substrate to after spin coating is exposed processing, further includes:
Baking is handled before being exposed using 90-110 DEG C of temperature to the substrate, baking time 57-63s.
Further, the substrate after described pair of exposure is dried after being exposed, comprising:
Baking is handled after being exposed using 90-110 DEG C of temperature to the substrate, baking time 60-180s.
Further, the substrate dried after described pair of exposure carries out standing cooling, comprising:
Cooling time is 10-30min.
Further, it is described develop to substrate after, further includes:
Baking is handled after being exposed using 100-130 DEG C of temperature to the substrate, and baking temperature is greater than exposure front baking
Roasting temperature, baking time 60-120s.
Further, it is described substrate is toasted before, further includes:
The substrate is cleaned.
The photolithography method provided by the invention for improving photoresist and substrate adhesiveness can generate it is following the utility model has the advantages that
In the photolithography method provided by the invention for improving photoresist and substrate adhesiveness, substrate is toasted first, is made
Obtaining substrate surface can become hydrophobic from hydrophilic, increase the adhesiveness of photoresist and substrate；Then the substrate after baking is carried out even
Glue processing；Then the substrate after spin coating is exposed, exposure mask is carried out by different mask plates, thus in the substrate of spin coating
Figure needed for achieving the purpose that expose out；It is dried after being then exposed to the substrate after exposure, improves photoresist and substrate adheres to
Standing wave effect while spending, after mitigating exposure；Standing cooling then is carried out to the substrate dried after exposure, avoids the occurrence of glue-line stripping
From or degumming phenomenon；Finally develop to substrate, by the characteristic of photoresist, prepares required exposure mask in substrate to reach
The purpose of figure layer.
For compared with the existing technology, the photolithography method of improvement photoresist provided by the invention and substrate adhesiveness is without making
With substrate surface tackifier, by cooling to the standing after the baking and baking after the baking of substrate, and exposure before spin coating,
The adhesiveness between substrate and photoresist can be effectively raised, technique requirement is met, increases equipment mould group without additional.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of photolithography method for improving photoresist and substrate adhesiveness provided by the invention；
Fig. 2 is another photolithography method for improving photoresist and substrate adhesiveness provided by the invention.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Fig. 1 is a kind of photolithography method for improving photoresist and substrate adhesiveness provided by the invention；
Fig. 2 is another photolithography method for improving photoresist and substrate adhesiveness provided by the invention.
The purpose of the present embodiment is that a kind of photolithography method for improving photoresist and substrate adhesiveness is provided, as shown in Figure 1,
Include:
Substrate is toasted；
Substrate after baking is subjected to spin coating processing；
Processing is exposed to the substrate after spin coating；
It is dried after being exposed to the substrate after exposure；
Standing cooling is carried out to the substrate dried after exposure；
Develop to substrate.
In the photolithography method provided by the invention for improving photoresist and substrate adhesiveness, substrate is toasted first, is made
Obtaining substrate surface can become hydrophobic from hydrophilic, increase the adhesiveness of photoresist and substrate；Then the substrate after baking is carried out even
Glue processing；Then the substrate after spin coating is exposed, exposure mask is carried out by different mask plates, thus in the substrate of spin coating
Figure needed for achieving the purpose that expose out；It is dried after being then exposed to the substrate after exposure, improves photoresist and substrate adheres to
Standing wave effect while spending, after mitigating exposure；Standing cooling then is carried out to the substrate dried after exposure, avoids the occurrence of glue-line stripping
From or degumming phenomenon；Finally develop to substrate, by the characteristic of photoresist, prepares required exposure mask in substrate to reach
The purpose of figure layer.
For compared with the existing technology, improvement photoresist and the photolithography method of substrate adhesiveness provided in this embodiment are not necessarily to
Using substrate surface tackifier, by cold to the standing after the baking and baking after the baking of substrate, and exposure before spin coating
But, the adhesiveness between substrate and photoresist can be effectively raised, technique requirement is met, increases equipment mould without additional
Group.
Wherein, in order to which the adhesiveness for more effectively increasing photoresist and substrate is wrapped in step toasts substrate
Include: setting baking temperature is 160-180 DEG C, baking time 50-80s.After substrate surface carries out high temperature drying processing,
In short period, surface can become hydrophobic from hydrophilic, to enhance the combination of photoresist and substrate, effectively increase light
The adhesiveness of photoresist and substrate；And the baking is the baking before spin coating, can't finally be had an impact to gluing effect.
Specifically, baking temperature can be 160 DEG C, 165 DEG C, 170 DEG C, 175 DEG C, 180 DEG C.Baking time can for 50s,
60s、70s、80s。
Wherein, in order to enable cured effect is more preferable, substrate is attached using heating board when toasting to substrate and is toasted.
Further, after being toasted to substrate, and before the substrate after toasting carries out spin coating processing, further includes:
Substrate is cooled to 20-24 DEG C, to promote the homogeneity of spin coating film thickness during spin coating.
It specifically, can be by substrate after being toasted to substrate, and before the substrate after toasting carries out spin coating processing
It is cooled to 20 DEG C, 23 DEG C, 24 DEG C.
Wherein, in order to enable Painting effect is more preferable, carrying out spin coating processing to substrate should not be with substrate baking procedure interval mistake
It is long, after toasting to substrate in 60s, spin coating processing is carried out to substrate, that is, is needed after toasting with before spin coating processing
Substrate is cooled to 20-24 DEG C in 60s.
Further, before being exposed processing to the substrate after spin coating, further includes: using 90-110 DEG C of temperature to base
Baking processing, baking time 57-63s before bottom is exposed.The step can increase the volatilization of the solvent in photoresist, equally
Preferably increase the adhesiveness of substrate and photoresist.
Specifically, can be used 90 DEG C, 100 DEG C, 110 DEG C of temperature substrate is exposed before baking processing, when baking
Between can be 57s, 60s, 63s.
Wherein, it is dried after being exposed to the substrate after exposure, comprising: substrate is exposed using 90-110 DEG C of temperature
Baking is handled after light, baking time 60-180s.The step can be improved the adhesiveness of substrate and photoresist, and can have
Effect mitigates the standing wave effect after exposure.
Specifically, can be used 90 DEG C, 100 DEG C, baking is handled after 110 DEG C of temperature is exposed substrate, when baking
Between be 60s, 90s, 120s, 150s, 180s.
Wherein, stand cooling cooling time to the substrate dried after exposure as 10-30min.Cool down chip uniformly
To room temperature, glue-line removing or degumming phenomenon are avoided the occurrence of.
Further, after developing to substrate, after being exposed using 100-130 DEG C of temperature to substrate at baking
Reason, baking temperature, which is greater than, exposes preceding baking temperature, baking time 60-120s.By the step, can further volatilize glue
Solvent in layer increases the adhesiveness of substrate and glue-line, and baking temperature, which is greater than, exposes preceding baking temperature, can be avoided glue after development
Layer dries situations such as collapsing, causing figure deformation, while avoiding difficult phenomenon of removing photoresist during following process.
Further, substrate is cleaned before being toasted to substrate, removes substrate residual organic matter.
In conclusion embodiment according to the present invention optional factor is more.Claim according to the present invention can combine
A variety of implementation methods out, thus claim combinations according to the present invention go out technical method protection scope of the present invention it
It is interior.The present invention is further described through below in conjunction with specific embodiments.
Embodiment one:
As shown in Figure 1, the photolithography method of a kind of the improvement photoresist and substrate adhesiveness that provide according to the present invention, comprising:
Step S101, toasts substrate；
Substrate after baking is carried out spin coating processing by step S102；
Step S103 is exposed processing to the substrate after spin coating；
Step S104 dries after being exposed to the substrate after exposure；
Step S105 carries out standing cooling to the substrate dried after exposure；
Step S106, develops to substrate.
Specific operation process is as follows:
It carries out step S101 first to toast substrate, setting baking temperature is 160-180 DEG C, and baking time is
50-80s increases the adhesiveness of photoresist and substrate；It then carries out step S102 and the substrate after baking is subjected to spin coating processing；
It then carries out step S103 and processing is exposed to the substrate after spin coating；Step S104 is then carried out to carry out the substrate after exposure
It is dried after exposure, baking is handled after being specially exposed using 90-110 DEG C of temperature to substrate, baking time 60-
180s, improves the adhesiveness of substrate and photoresist, and can effectively mitigate the standing wave effect after exposure；Then carry out S105 pairs
The substrate dried after exposure carries out standing cooling, cooling time 10-30min；S106 is finally carried out to develop to substrate.
Embodiment two:
As shown in Fig. 2, the photolithography method of a kind of the improvement photoresist and substrate adhesiveness that provide according to the present invention, comprising:
Step S201, cleans substrate；
Step S202, toasts substrate；
Substrate is cooled to 20-24 DEG C by step S203；
Substrate after baking is carried out spin coating processing by step S204；
Step S205, baking is handled before being exposed using 90-110 DEG C of temperature to substrate, baking time 57-
63s；
Step S206 is exposed processing to the substrate after spin coating；
Step S207 dries after being exposed to the substrate after exposure；
Step S208 carries out standing cooling to the substrate dried after exposure；
Step S209, develops to substrate；
Step S210, baking is handled after being exposed using 100-130 DEG C of temperature to substrate, and baking temperature, which is greater than, to expose
Baking temperature before light, baking time 60-120s.
Specific operation process is as follows:
It carries out step S201 first to clean substrate, to remove substrate residual organic matter；Then carry out step S202
Substrate is toasted, setting baking temperature is 160-180 DEG C, baking time 50-80s, increases photoresist and substrate
Adhesiveness；It then carries out step S203 and substrate is cooled to 20-24 DEG C, to promote the homogeneity of spin coating film thickness during spin coating；
After to substrate baking in 60s, step S204 is carried out by the substrate after baking and carries out spin coating processing；Then carry out step S205
Baking is handled before being exposed using 90-110 DEG C of temperature to substrate, baking time 57-63s, is increased in photoresist
Solvent volatilization, equally preferably increases the adhesiveness of substrate and photoresist；Then carry out step S206 to the substrate after spin coating into
Row exposure-processed；It then carries out drying after step S207 is exposed the substrate after exposure, specially uses 90-110 DEG C of temperature
Baking is handled after degree is exposed substrate, baking time 60-180s, improves the adhesiveness of substrate and photoresist, and can
With effective standing wave effect mitigated after exposing；It then carries out step S208 and standing cooling is carried out to the substrate dried after exposure, it is cooling
Time is 10-30min；Step S209 is then carried out to develop to substrate；It finally carries out step S210 and uses 100-130 DEG C
Temperature substrate is exposed after baking handle, baking temperature be greater than expose before baking temperature, baking time 60-120s.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of photolithography method for improving photoresist and substrate adhesiveness characterized by comprising
Substrate is toasted；
Substrate after baking is subjected to spin coating processing；
Processing is exposed to the substrate after spin coating；
It is dried after being exposed to the substrate after exposure；
Standing cooling is carried out to the substrate dried after exposure；
Develop to substrate.
2. the photolithography method according to claim 1 for improving photoresist and substrate adhesiveness, which is characterized in that described to base
It is toasted at bottom, comprising:
It is 160-180 DEG C that baking temperature, which is arranged, baking time 50-80s.
3. the photolithography method according to claim 1 for improving photoresist and substrate adhesiveness, which is characterized in that described to base
It is toasted at bottom, comprising:
The substrate is attached using heating board to be toasted.
4. the photolithography method according to claim 1 for improving photoresist and substrate adhesiveness, which is characterized in that described right
After substrate is toasted, and before the substrate by after baking carries out spin coating processing, further includes:
The substrate is cooled to 20-24 DEG C.
5. the photolithography method according to claim 4 for improving photoresist and substrate adhesiveness, which is characterized in that described to dry
Substrate after roasting carries out spin coating processing, comprising:
After to substrate baking in 60s, spin coating processing is carried out to the substrate.
6. the photolithography method according to claim 1 for improving photoresist and substrate adhesiveness, which is characterized in that described to even
Before substrate after glue is exposed processing, further includes:
Baking is handled before being exposed using 90-110 DEG C of temperature to the substrate, baking time 57-63s.
7. the photolithography method according to claim 1 for improving photoresist and substrate adhesiveness, which is characterized in that described pair of exposure
Substrate after light is dried after being exposed, comprising:
Baking is handled after being exposed using 90-110 DEG C of temperature to the substrate, baking time 60-180s.
8. the photolithography method according to claim 1 for improving photoresist and substrate adhesiveness, which is characterized in that described pair of exposure
The substrate dried after light carries out standing cooling, comprising:
Cooling time is 10-30min.
9. the photolithography method according to claim 6 for improving photoresist and substrate adhesiveness, which is characterized in that described to base
After bottom is developed, further includes:
Baking is handled after being exposed using 100-130 DEG C of temperature to the substrate, and baking temperature is greater than baking temperature before exposure
Degree, baking time 60-120s.
10. the photolithography method according to claim 1 for improving photoresist and substrate adhesiveness, which is characterized in that described right
Before substrate is toasted, further includes:
The substrate is cleaned.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910499184.3A CN110161803A (en) | 2019-06-10 | 2019-06-10 | Improve the photolithography method of photoresist and substrate adhesiveness |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910499184.3A CN110161803A (en) | 2019-06-10 | 2019-06-10 | Improve the photolithography method of photoresist and substrate adhesiveness |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111613557A (en) * | 2020-06-01 | 2020-09-01 | 厦门通富微电子有限公司 | Wafer processing equipment |
| CN111983893A (en) * | 2020-08-28 | 2020-11-24 | 中国科学院微电子研究所 | Gluing and photoetching method applied to wafer with steps on surface |
| CN112698553A (en) * | 2021-01-14 | 2021-04-23 | 陕西彩虹新材料有限公司 | Method for improving adhesion between photoresist and wafer |
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| CN106338889A (en) * | 2016-11-03 | 2017-01-18 | 西南石油大学 | Method for preparing microcosmic visual etching low-permeability model |
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| CN111613557A (en) * | 2020-06-01 | 2020-09-01 | 厦门通富微电子有限公司 | Wafer processing equipment |
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