JP3634983B2 - Heat treatment equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a heat treatment apparatus that heats an object to be processed such as a semiconductor wafer in a resist processing step, for example.
[0002]
[Prior art]
In the manufacturing process of a semiconductor device, a photolithography technique is used. In the photolithography technique, a resist is applied to the surface of a semiconductor wafer (hereinafter simply referred to as “wafer”), the applied resist is exposed to a predetermined pattern, and further developed. As a result, a resist film having a predetermined pattern is formed on the wafer, and a circuit having a predetermined pattern is formed by performing film formation and etching.
[0003]
Conventionally, such a series of resist processing is performed using a coating and developing processing system in which, for example, a resist solution coating unit, a development processing unit, and a heat processing unit are integrated.
[0004]
FIG. 13 is a front view showing an example of a heat treatment unit in a conventional coating and developing treatment system.
As shown in FIG. 13, a hot plate 102 for heating the wafer W is arranged at substantially the center of the heat processing unit 101, and a plurality of support pins 103 for transferring the wafer W can appear and disappear from the surface of the hot plate 102. It has become. Further, around the hot plate 102, a shutter member 104 that can be moved in and out so as to surround the hot plate 102 is disposed.
[0005]
An exhaust cover 105 for exhausting the atmosphere on the hot plate 102 is disposed on the upper surface of the hot plate 102. The exhaust cover 105 has a conical shape with a diameter substantially equal to that of the hot plate 102, and is connected to an exhaust device (not shown) from its substantially center (position corresponding to approximately the center of the hot plate 102).
[0006]
Then, with the support pins 103 protruding from the hot plate 102 and the shutter member 104 being submerged, the wafer W is delivered from a transfer device (not shown).
[0007]
Next, the support pin 103 descends and sinks from the hot plate 102, the shutter member 104 rises, and a closed space is formed between the hot plate 102, the shutter member 104, and the exhaust cover 105. In this state, the wafer W is subjected to heat treatment, and the volatilized solvent is exhausted through the exhaust cover 105.
[0008]
Thereafter, the support pins 103 are lifted to float the wafer W from the hot plate 102, and at the same time, the shutter member 104 is lowered to transfer the wafer W to the transfer device.
[0009]
[Problems to be solved by the invention]
However, in the heat treatment unit 101 described above, the atmosphere of the solvent volatilized in the closed space formed between the hot plate 102, the shutter member 104, and the exhaust cover 105 during the heat treatment is filled. There is a problem that when the shutter member 104 is moved down to transfer the wafer W to the transfer device after the heat treatment is completed, the volatilized solvent leaks out of the heat treatment unit 101 and adversely affects other processes. Further, since the above-described conventional exhaust cover 105 has a structure connected to the exhaust device from the center, the exhaust flow in the exhaust cover 105 is biased and cannot be uniformly exhausted. There is also a problem of worsening the uniformity. Furthermore, there is a problem that the evaporated solvent is condensed on a portion of the exhaust cover 105 where the temperature is low, and when the amount increases, the condensed solvent falls on the wafer W.
[0010]
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a heat treatment apparatus in which a volatilized solvent does not leak out of the apparatus.
Another object of the present invention is to provide a heat treatment apparatus capable of uniformly exhausting air.
Still another object of the present invention is to provide a heat treatment apparatus in which a volatilized solvent is not condensed and does not fall on an object to be treated.
[0011]
[Means for Solving the Problems]
In order to solve such a problem, the heat treatment apparatus according to the first aspect of the present invention includes a heat treatment region having a first region on which a workpiece is placed and heated, the first region, and the first region. An exhaust cover having an exhaust hole provided so as to face a second region surrounding one region, and an exhaust means for exhausting the first and second regions through the exhaust hole A shutter member that closes a gap between the outer periphery of the first region and the exhaust cover when heating the object to be processed; It comprises.
[0013]
Claim 2 The heat treatment apparatus of the present invention according to A heat treatment region having a first region on which an object is placed and heated, and an exhaust hole provided so as to face the first region and a second region surrounding the first region An exhaust cover; and exhaust means for exhausting the first and second regions through the exhaust hole, The exhaust means exhausts the first and second regions through the exhaust holes even when the object to be processed is not heated.
[0014]
Claim 3 The heat treatment apparatus of the present invention according to A heat treatment region having a first region on which the object to be processed is placed and heated, and an exhaust hole provided so as to face the first region and the second region surrounding the first region are provided. And an exhaust cover connected to the exhaust means from a side surface and an exhaust means for exhausting the first and second regions through the exhaust holes in a box-shaped structure, The exhaust cover has a box-shaped structure and is connected to the exhaust means from a side surface.
[0015]
Claim 4 The heat treatment apparatus of the present invention according to A heat treatment region having a first region on which an object is placed and heated, and an exhaust hole provided so as to face the first region and a second region surrounding the first region An exhaust cover and exhaust means for exhausting the first and second regions through the exhaust hole; Heating means for heating the exhaust cover And ingredients To prepare.
[0016]
Claim 5 The heat treatment apparatus of the present invention according to A heat treatment region having a first region on which an object is placed and heated, and an exhaust hole provided so as to face the first region and a second region surrounding the first region An exhaust cover and exhaust means for exhausting the first and second regions through the exhaust hole; A plate-like member having a large number of through holes attached to the inlet of the exhaust hole And ingredients To prepare.
[0017]
Claim 6 The heat treatment apparatus according to the present invention includes a heat treatment region having a first region on which an object to be processed is placed and heated, the first region and a second region surrounding the first region, Are exhausted at the same time.
[0018]
Claim 7 The heat treatment apparatus of the present invention according to claim 6 In the heat treatment apparatus described above, the first region and the second region are exhausted even when the object to be processed is not heated.
[0019]
Claim 1, 6 In the present invention according to the description, since the second region surrounding the first region on which the workpiece is placed and heated is exhausted, the solvent volatilized in the first region is the second region. In this region, the air is exhausted and does not leak out of the apparatus. In addition, since the gas not including the surrounding solvent is introduced into the exhaust cover from the second region, the concentration of the volatile solvent in the exhaust cover is reduced, and the volatilized solvent is condensed and attached in the exhaust cover. Less.
[0020]
Claim 1 In the present invention, when the object to be processed is heated, the gap between the outer periphery of the first region and the exhaust cover is closed by the shutter member in addition to the exhaust of the second region. The exhaust flowing in the exhaust cover in the region does not disturb the flow of the exhaust flowing in the exhaust cover in the first region, and the volatilized solvent does not leak out of the apparatus.
[0021]
Claim 2 , 7 In the present invention, since the first and second regions are exhausted even when the object to be processed is not heated, the volatilized solvent does not leak out of the apparatus even after the heat treatment is completed.
[0022]
Claim 3 In the present invention, since the exhaust cover has a box-type structure, the exhaust cover functions as a buffer for temporarily storing the gas to be exhausted, and exhaust is performed from the side. The inside can be exhausted more uniformly, and therefore the exhaust cover can provide more uniform exhaust.
[0023]
Claim 4 In the present invention, since the exhaust cover is heated, the volatilized solvent does not adhere to the exhaust cover due to condensation.
[0024]
Claim 5 In the present invention according to the present invention, since the plate-like member having a large number of through holes is attached to the inlet of the exhaust hole, more uniform exhaust can be performed. Further, even if the solvent volatilized on the exhaust cover is condensed, the possibility of the solvent falling on the object to be processed is reduced.
[0025]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
1 is a plan view of a coating and developing treatment system according to an embodiment of the present invention, FIG. 2 is a front view of the coating and developing treatment system shown in FIG. 1, and FIG. 3 is a rear view of the coating and developing system shown in FIG. is there.
[0026]
As shown in FIGS. 1 to 3, the coating and developing processing system 1 has a configuration in which a cassette station 10, a processing station 11, and an interface unit 12 are integrally connected. In the cassette station 10, a plurality of wafers W, for example, 25 wafers, are transferred from the outside to the coating / developing system 1 in the cassette station 10, and unloaded from the coating / developing system 1 to the outside. Further, the wafer W is unloaded / loaded into / from the cassette C. In the processing station 11, various single-wafer type processing units that perform predetermined processing on the wafer W one by one in the coating and developing processing step are arranged in multiple stages at predetermined positions. In the interface unit 12, the wafer W is transferred to and from an exposure apparatus 13 provided adjacent to the coating and developing treatment system 1.
[0027]
In the cassette station 10, as shown in FIG. 1, a plurality of, for example, four cassettes C are arranged at the position of the positioning projection 20 a on the cassette mounting table 20, and each wafer W entrance / exit is directed toward the processing station 11. (Up and down direction in FIG. 1). A wafer transfer body 21 movable in the cassette C arrangement direction (X direction) and the wafer W arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C is movable along the transfer path 21a. Yes, each cassette C is selectively accessed.
[0028]
The wafer transfer body 21 is configured to be rotatable in the θ direction and, as will be described later, an alignment unit (ALIM) and an extension unit (EXT) belonging to the multistage unit section in the third processing unit group G3 on the processing station 11 side. Can also be accessed.
[0029]
As shown in FIG. 1, the processing station 11 is provided with a vertical transfer type transfer device 22 at the center thereof, and various processing units are arranged in a multistage integrated manner around one set or a plurality of sets. A processing unit group is configured. In the coating and developing processing system 1, five processing unit groups G1, G2, G3, G4, and G5 can be arranged, and the first and second processing unit groups G1 and G2 are arranged on the front side of the system. The third processing unit group G3 is disposed adjacent to the cassette station 10, the fourth processing unit group G4 is disposed adjacent to the interface unit 12, and further includes a fifth processing unit group G5 indicated by a broken line. It can be arranged on the back side. The transfer device 22 is configured to be rotatable in the θ direction and movable in the Z direction, and the wafer W can be transferred to and from each processing unit.
[0030]
In the first processing unit group G1, as shown in FIG. 2, two spinner type processing units, for example, a resist solution coating unit (COT), for performing predetermined processing by placing the wafer W on the spin chuck in the cup CP, and Development processing units (DEV) are stacked in two stages from the bottom. Similarly to the first processing unit group G1, in the second processing unit group G2, two spinner type processing units, for example, a resist solution coating unit (COT) and a development processing unit (DEV) are provided in order from the bottom. It is stacked on the stage.
[0031]
As shown in FIG. 2, a high-performance filter 23 such as a ULPA filter is provided in the upper part of the coating and developing treatment system 1 for each of the three zones (the cassette station 10, the processing station 11, and the interface unit 12). ing. When the air supplied from the upstream side of the high-performance filter 23 passes through the high-performance filter 23, particles and organic components are collected and removed. Therefore, through the high performance filter 23, the cassette mounting table 20, the transfer path 21a of the wafer transfer body 21, the first to second processing unit groups G1 and G2, and the third to fifth processing units to be described later. A down flow of clean air from above is supplied to the groups G3, G4, G5 and the interface unit 12 in the direction of solid arrows or dotted arrows in FIG.
[0032]
In the third processing unit group G3, as shown in FIG. 3, an oven-type processing unit that carries out a predetermined process by placing the wafer W on a mounting table, for example, a cooling unit (COL) that performs a cooling process, and a resist fixing property. For improving the so-called hydrophobization treatment (AD), alignment unit (ALIM) for alignment, extension unit (EXT), pre-baking unit (PREBAKE) for performing pre-exposure heat treatment and post Baking units (POBAKE) are stacked in, for example, eight stages from the bottom.
[0033]
Similarly, in the fourth processing unit group G4, as shown in FIG. 3, an oven-type processing unit that performs a predetermined process by placing the wafer W on the mounting table, for example, a cooling unit (COL) that performs a cooling process, Extension cooling unit (EXTCOL), extension unit (EXT), adhesion unit (AD), pre-baking unit (PREBAKE), and post-baking unit (POBAKE), which also serve as processing, are stacked in order from the bottom, for example, in 8 stages ing.
[0034]
In this way, the cooling unit (COL) and the extension cooling unit (EXTCOL) having a low processing temperature are arranged in the lower stage, and the pre-baking unit (PREBAKE), the post-baking unit (POBAKE) and the adhesion unit (AD) having a high processing temperature. ) In the upper stage can reduce the thermal mutual interference between the units.
[0035]
As shown in FIG. 1, the interface unit 12 has the same dimensions as the processing station 11 in the depth direction (X direction), but is set to a smaller size in the width direction. As shown in FIGS. 1 and 2, a portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages on the front side of the interface unit 12, and the peripheral exposure device 24 is arranged on the other back side. Is arranged.
[0036]
A wafer carrier 25 is provided at the center of the interface unit 12. The wafer transfer body 25 moves in the X direction and the Z direction (vertical direction) so that both cassettes CR and BR and the peripheral exposure apparatus 24 can be accessed. The wafer transfer body 25 is configured to be rotatable also in the θ direction, and the extension unit (EXT) belonging to the fourth processing unit group G4 on the processing station 11 side, and further on the adjacent exposure apparatus 13 side. The wafer transfer table (not shown) can also be accessed.
[0037]
FIG. 4 is a front view of a post-baking unit (POBAKE) according to the heat treatment apparatus of the present invention.
As shown in FIG. 4, a hot plate 31 for heat-treating the wafer W is disposed almost at the center of the post-baking unit (POBAKE). In the hot plate 31, for example, a pipe (not shown) through which heated fluid flows is provided, and the hot plate 31 is heated by flowing the heated fluid through the pipe. A plurality of support pins 32 for transferring the wafer W are arranged on the hot plate 31 so as to be able to appear and retract, and are raised and lowered by an elevating mechanism 33 arranged on the back surface of the hot plate 31.
[0038]
In addition, a shutter member 34 is disposed around the hot plate 31 so as to surround the hot plate 31, and is moved up and down by an elevating mechanism 35 disposed on the back surface of the hot plate 31. Further, the inner wall of the shutter member 34 is provided with a number of ejection holes 36 for ejecting high temperature gas, for example, N2 as inert gas. The ejection hole 36 is connected to a hot gas supply device (not shown).
An exhaust cover 37 having a box-shaped structure is disposed on the upper surface of the hot plate 31.
[0039]
FIG. 5 is a view of the exhaust cover 37 as seen from the direction of arrows AA in FIG. As shown in FIGS. 4 and 5, an exhaust hole 38 is provided on the surface of the exhaust cover 37 facing the hot plate 31. The exhaust hole 38 has a size that extends not only to the first region (1) on the hot plate 31 but also to the second region (2) surrounding the first region (1). A plate-like member 40 having a large number of through holes 39 is disposed at the inlet of the exhaust hole 38.
[0040]
A heating device 41 for heating the inside of the exhaust cover 37 is disposed on the exhaust cover 37.
Further, an exhaust pipe 42 is connected to one side surface of the exhaust cover 37, and an exhaust device 43 is connected to the exhaust pipe 42. The first region (1) and the second region (2) are exhausted by the exhaust device 43 through the exhaust hole 38.
[0041]
Next, the operation will be described.
First, the wafer W is transferred from the transfer device 22 onto the support pins 32 with the support pins 32 protruding from the hot plate 31 and the shutter member 34 being submerged. Next, the support pin 32 descends and sinks from the hot plate 31, the shutter member 34 rises, and a closed space is formed between the hot plate 31, the shutter member 34, and the exhaust cover 37. In this state, the wafer W is heated.
[0042]
FIG. 6 is a partially enlarged view of FIG. 4 at that time.
As shown by the solid line arrow in FIG. 6, the exhaust cover 37 surrounds not only the first region (1) on the hot plate 31 but also the first region (1), that is, the outer periphery of the shutter member 34. Exhaust is also performed in the area (2) of 2.
[0043]
Thereafter, the support pins 32 are lifted to float the wafer W from the hot plate 31, and at the same time, the shutter member 34 is lowered and the wafer W is delivered to the transfer device 22.
[0044]
FIG. 7 is a partially enlarged view of FIG. 4 at that time.
Even in this case, that is, when the wafer W is not heated, the exhaust cover 37 has the first region {circle around (1)} on the hot plate 31 and the second region surrounding it as shown by the solid line arrow in FIG. Exhaust the area (2).
[0045]
As described above, according to this embodiment, the first region {circle around (1)} on the hot plate 31 and the second region {circle around (2)} surrounding the first region {circle around (1)} are exhausted. The solvent volatilized in 1) is exhausted also in the second region (1) and does not leak out of the unit, and does not adversely affect other processes. In addition, during the heat treatment in which the concentration of the volatile solvent becomes high, the first region {circle around (1)} and the second region {circle around (2)} are blocked by the shutter member, so that the exhaust gas is exhausted in the second region {circle around (2)}. Since the exhaust flowing in the cover 37 does not disturb the flow of the exhaust flowing in the exhaust cover 37 in the first region {circle around (1)}, the volatilized solvent is less likely to leak from the shutter member 34. Volatile solvent will not leak out of the unit. In addition, since exhaust is performed by the exhaust cover 37 even when the heat treatment is not performed, the volatilization occurs even when the shutter member 34 is lowered to deliver the wafer W to the transfer device 22 after the heat treatment is completed. No solvent leaks out of the unit.
[0046]
Further, according to this embodiment, since the gas not including the surrounding solvent is taken into the exhaust cover 37 from the second region (2), the concentration of the volatile solvent in the exhaust cover 37 is reduced, and the volatilization is performed. The deposited solvent is less likely to be condensed in the exhaust cover 37. In addition, since the inside of the exhaust cover 37 is heated by the heating device 41, no condensation occurs.
[0047]
Further, since the exhaust cover 37 has a box-type structure, the exhaust cover 37 functions as a buffer for temporarily storing gas to be exhausted, and exhaust is performed from the side surface. Therefore, the exhaust cover 37 can exhaust the air more uniformly.
[0048]
Next, another embodiment of the present invention will be described. FIG. 8 shows another embodiment of the partially enlarged view of FIG. 4 shown in FIG.
As shown in FIG. 8, a heating mechanism, for example, a temperature detection mechanism for detecting the temperature of the heater 200 and the shutter member 34, for example, a thermocouple 201 is provided inside the shutter member 34. The heater 200 is connected to a power supply device, for example, an AC power source 202, and is configured so that the temperature of the shutter member 34 can be set to a predetermined temperature by the power from the AC power source 202. Further, the temperature detection data of the thermocouple 201 is captured by a control mechanism, for example, the CPU 203, and based on the temperature detection data, the CPU 203 is configured to instruct the AC power source 202 the amount of power to be sent to the heater 200. Yes. Thus, since the temperature of the shutter member 34 can be set to a desired temperature, for example, a temperature that suppresses the adhesion of the solvent volatilized from the wafer W, it is possible to prevent the generation factor that the solvent adheres to become particles. The yield of processing of the wafer W can be improved.
[0049]
Further, since the temperature of N2 ejected from the ejection hole 36 provided in the shutter member 34 can be heated to a desired temperature, the temperature of N2 and the temperature in the processing space should be set to substantially the same temperature. The temperature drop of the wafer W at the blowout portion of N2 can be suppressed, the in-plane uniformity of the temperature of the wafer W can be improved, and the processing yield of the wafer W can be improved.
[0050]
In addition, the through hole 39 above the first region {circle around (1)} has a hole diameter of φx2, and the through hole 39 above the second region {circle around (2)} has a hole diameter of φx1. The relationship between these hole diameters is set to a relationship of φx1> φx2.
Therefore, the exhaust amount per hole from the first region {circle around (1)} is smaller than the exhaust amount per hole of the second region {circle around (2)}. Thus, the through holes 39 of the first region {circle around (1)} By changing the diameter of the through hole 39 in the second region (2), the exhaust amount from the processing space in the shutter member 34 can be adjusted, the heat retaining property of the processing space is improved, and the temperature of the hot plate 31 is stabilized. can do. As a result, the in-plane uniformity of the temperature of the wafer W can be improved and the processing yield can be improved.
In the above description, the relationship between the hole diameter of the through hole 39 above the first region (1) and the hole diameter φx1 of the through hole 39 above the second region (2) is set to a relationship of φx1> φx2. It goes without saying that these relationships may be set to φx1 <φx2 in the W processing process or the like.
[0051]
Further, a through hole 39a is further provided in the side wall of the exhaust cover 37, and the gas can be sucked from the through hole 39a. By providing the through holes 39a on the side wall of the exhaust cover 37 in this way, the vertical flow gas sucked from the through holes 39 in the first region (1) and the through holes 39 in the second region (2) can be obtained. It can be accelerated to a horizontal flow, the generation of vortex in the exhaust cover 37 can be suppressed, and the adhesion of the solvent contained in the sucked gas in the exhaust cover 37 can be suppressed. Therefore, it is possible to prevent the generation factor of particles due to adhesion of the solvent, the yield of processing of the wafer W can be improved, and the maintenance time period for cleaning the inside of the exhaust cover 37 can be extended. And the operating rate of the apparatus can be improved.
[0052]
Next, another embodiment of the present invention will be described. FIG. 9 is another embodiment of the front view of the post-baking unit (POBAKE) shown in FIG. As shown in FIG. 9, the lower wall 210 of the exhaust pipe 42 serving as an exhaust path on the exhaust device 43 side is configured to be inclined downward at a predetermined angle θ toward the exhaust device 43. In this case, when condensation occurs in the exhaust cover 37, the liquid flows in the direction of the exhaust device 43. Therefore, the liquid condensed from the through holes 39 of the exhaust cover 37 leaks out and is prevented from adhering to the wafer W, so that the processing yield of the wafer W can be improved.
[0053]
Further, on the exhaust device 43 side of the lower wall 210, a trap portion 212 having a reservoir portion 211 that stores condensed liquid is disposed. A discharge port 213 for discharging the condensed liquid stored in the reservoir portion 211 is provided at a position below the reservoir portion 211 of the trap portion 212. The discharge port 213 is connected to the drainage passage 214 and discharged. It is comprised so that.
Further, a heating mechanism, for example, a heater 215 is provided on the side of the reservoir 211, the discharge port 213, and the drainage path 214 to prevent the condensed liquid from solidifying.
[0054]
In addition, a cooling mechanism 216 for forcibly liquefying a solvent or the like contained in the gas in the exhaust cover 37 is provided above the trap portion 212. The cooling mechanism 216 includes a power supply for the cooling mechanism 216. A DC power source is connected as a power supply mechanism for supplying power. Accordingly, the solvent or the like contained in the gas in the exhaust cover 37 is forcibly liquefied by the cooling mechanism 216 and collected in the trap portion 212.
By being configured in this way, the exhaust gas from the exhaust device 43 does not contain a solvent or the like, so the life of the exhaust device 43 can be extended.
[0055]
Next, another embodiment of the present invention will be described. 10 is another embodiment of the exhaust cover shown in FIG. 5 as viewed from the direction of arrows AA in FIG.
As shown in FIG. 10, exhaust pipes 42 as exhaust paths for exhausting the exhaust cover 37 are provided in a plurality of directions, for example, four directions. The exhaust pipes 42 provided in these four directions are connected to an exhaust device 43. Thus, since the inside of the exhaust cover 37 is exhausted from the four directions by the exhaust pipe 42, the exhaust cover 37 can be exhausted more uniformly, and exhaust unevenness on the wafer W can be prevented.
Therefore, the processing yield of the wafer W can be improved.
[0056]
Next, another embodiment of the present invention will be described. FIG. 11 is another embodiment of the front view of the post-baking unit (POBAKE) according to the heat treatment apparatus shown in FIG.
As shown in FIG. 11, a cleaning brush 220 as a cleaning mechanism configured to be movable in the exhaust cover 37 is disposed in the exhaust cover 37.
As shown in FIG. 12, the cleaning brush 220 is configured to be held by an arm portion 221 and turnable by the movement of the arm portion 221. The cleaning brush 220 includes a body portion 222 and a plurality of hair bodies 223 planted in the body portion 222.
The cleaning brush 220 is operated after processing the wafer W or during maintenance of the apparatus, and can clean unnecessary substances attached to the exhaust cover 37.
Thereby, the period of the maintenance time for cleaning the inside of the exhaust cover 37 can be extended, and the operating rate of the apparatus can be improved.
[0057]
Further, the plurality of ejection holes 36 provided in the shutter member 34 supply a high temperature gas supply device, for example, an N2 supply device 230 as an inert gas, and a cleaning gas for cleaning unnecessary substances attached in the processing space and the exhaust cover 37. It connects with the three-way valve 232 which enables selection of each one with the cleaning gas supply apparatus 231 to perform.
The three-way valve 232 is controlled by an instruction signal 234 from the CPU 203 as a control mechanism.
That is, during the processing of the wafer W, the three-way valve 232 is connected to the N2 supply device 230 by the instruction signal 234 of the CPU 203, and after the processing of the wafer W or during the maintenance of the apparatus, a time when cleaning is required. The three-way valve 232 is connected to the cleaning gas supply device 231 by the instruction signal 234 of the CPU 203.
With such a configuration, it is possible to effectively clean the solvent or the like adhering to the inside of the apparatus, so that it is possible to prevent the generation factor that becomes particles, and the processing yield of the wafer W can be improved.
Further, the cleaning efficiency can be further enhanced by using the cleaning brush together with the cleaning brush.
[0058]
The present invention is not limited to the embodiment described above.
For example, in the above-described embodiment, the exhaust hole 38 is rectangular. However, the present invention is not limited to this and may be circular. By making the exhaust holes circular, the balance of exhaust is improved, and the possibility of the above-described turbulent flow can be further reduced.
Further, the present invention is naturally applicable not only to the wafer W but also to other objects to be processed such as an LCD substrate.
[0059]
【The invention's effect】
As explained above, claim 1, 6 According to the present invention as described, the solvent volatilized in the first region is exhausted also in the second region, and does not leak out of the apparatus. In addition, since the gas not including the surrounding solvent is introduced into the exhaust cover from the second region, the concentration of the volatile solvent in the exhaust cover is reduced, and the volatilized solvent is condensed and attached in the exhaust cover. Less.
[0060]
Claim 1 According to the present invention, the exhaust flowing in the exhaust cover in the second region does not disturb the flow of the exhaust flowing in the exhaust cover in the first region, and the volatilized solvent leaks out of the apparatus. Things will disappear.
[0061]
Claim 2 , 7 According to the present invention, the volatilized solvent does not leak out of the apparatus even after the heat treatment.
[0062]
Claim 3 According to the present invention, more uniform exhaust can be performed by the exhaust cover.
[0063]
Claim 4 According to the present invention, the volatilized solvent does not adhere to the exhaust cover due to condensation.
[0064]
Claim 5 According to the present invention, more uniform exhaust can be performed. Further, even if the solvent volatilized on the exhaust cover is condensed, the possibility of the solvent falling on the object to be processed is reduced.
[Brief description of the drawings]
FIG. 1 is a plan view of a coating and developing treatment system according to an embodiment of the present invention.
FIG. 2 is a front view of the coating and developing treatment system shown in FIG.
3 is a rear view of the coating and developing treatment system shown in FIG. 1. FIG.
FIG. 4 is a front view of a post-baking unit (POBAKE) according to the heat treatment apparatus of the present invention.
5 is a view of the exhaust cover as seen from the direction of arrows AA in FIG.
6 is a partially enlarged view of FIG. 4;
7 is a partially enlarged view of FIG. 4;
FIG. 8 is a diagram showing another embodiment of FIG. 6;
FIG. 9 is a diagram showing another embodiment of FIG. 4;
FIG. 10 is a diagram showing another embodiment of FIG. 5;
FIG. 11 is a diagram showing another embodiment of FIG. 4;
12 is a partially enlarged perspective view of FIG. 11. FIG.
FIG. 13 is a front view of a conventional heat treatment unit.
[Explanation of symbols]
31 Hot plate
34 Shutter member
37 Exhaust cover
38 Exhaust hole
39 Through hole
40 Plate member
41 Heating device
43 Exhaust system
W wafer

Claims (12)

A heat treatment region having a first region on which the workpiece is placed and heated;
An exhaust cover having an exhaust hole provided to face the first region and the second region surrounding the first region;
Exhaust means for exhausting the first and second regions through the exhaust holes ;
A heat treatment apparatus, comprising: a shutter member that closes a gap between an outer periphery of the first region and the exhaust cover when the object to be treated is heated . A heat treatment region having a first region on which the workpiece is placed and heated;
An exhaust cover having an exhaust hole provided to face the first region and the second region surrounding the first region;
Exhaust means for exhausting the first and second regions through the exhaust holes ,
The heat treatment apparatus, wherein the exhaust means exhausts the first and second regions through the exhaust holes even when the object to be processed is not heated. A heat treatment region having a first region on which the workpiece is placed and heated;
Have a first region and the first exhaust holes provided so as to face the second region surrounding the region, the structure of box-type, an exhaust cover coupled from the side to the exhaust means,
A heat treatment apparatus comprising exhaust means for exhausting the first and second regions through the exhaust holes. A heat treatment region having a first region on which the workpiece is placed and heated;
An exhaust cover having an exhaust hole provided to face the first region and the second region surrounding the first region;
Exhaust means for exhausting the first and second regions through the exhaust holes ;
A heat treatment apparatus comprising: heating means for heating the exhaust cover . A heat treatment region having a first region on which the workpiece is placed and heated;
An exhaust cover having an exhaust hole provided to face the first region and the second region surrounding the first region;
Exhaust means for exhausting the first and second regions through the exhaust holes ;
A heat treatment apparatus, comprising: a plate-like member having a large number of through holes attached to an inlet of the exhaust hole . A heat treatment region having a first region on which the workpiece is placed and heated;
A heat treatment apparatus characterized in that the first region and the second region surrounding the first region are exhausted simultaneously. It is a heat processing apparatus of Claim 6 , Comprising:
The heat treatment apparatus characterized in that the first region and the second region are evacuated even when the object to be treated is not heated. It is a heat processing apparatus of Claim 5 , Comprising:
The heat treatment apparatus, wherein a diameter of the through hole in the first region is different from a diameter of the through hole in the second region. The heat treatment apparatus according to claim 5 or 8 ,
The diameter of the through hole in the first region is smaller than the diameter of the through hole in the second region. The heat treatment apparatus according to claim 1 ,
A heat treatment apparatus, wherein the shutter member is provided with a heating mechanism. The heat treatment apparatus according to any one of claims 1 to 10 ,
The heat treatment apparatus according to claim 1, wherein a trap portion for removing impurities contained in the exhausted gas is provided in an exhaust path of the exhaust means. The heat treatment apparatus according to any one of claims 1 to 11 ,
A heat treatment apparatus comprising a cleaning mechanism for removing impurities in the exhaust cover.

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