JP4185710B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus and a substrate processing method for performing development processing on a semiconductor substrate in a photolithography process in manufacturing a semiconductor device.
[0002]
[Prior art]
In the photolithography process of semiconductor device manufacturing, a photoresist is applied to the surface of a semiconductor wafer (hereinafter referred to as “wafer”), a mask pattern is exposed on the resist, and this is developed to form a resist pattern on the wafer surface. is doing.
[0003]
In such a photolithography process, development processing is performed by a method such as a paddle method or a dip method. For example, in the paddle type, the developer is supplied to the wafer, while in the dip type, the wafer is immersed in the developer to proceed with the development process, and thereafter the rinse liquid as a cleaning liquid using pure water or the like is used for the wafer. The developer is washed away by supplying it above. Finally, in order to remove the rinsing liquid from the wafer, a drying process is performed by air blowing, rotating the wafer, or the like.
[0004]
[Problems to be solved by the invention]
Incidentally, miniaturization of semiconductor devices in recent years has further progressed, and fine and high aspect ratio resist patterns have appeared. Due to the fineness and high aspect ratio of the resist pattern, for example, when the rinsing liquid comes out between the patterns in the drying process, an attractive force is generated between the patterns due to the surface tension of the rinsing liquid. The problem of “falling” has occurred. As a countermeasure for such a problem, for example, there is a method of reducing the surface tension of the rinse liquid by mixing a surfactant in the rinse liquid. In this method, it is required that the rinsing liquid be uniformly supplied onto the substrate, but there is a problem that the rinsing liquid cannot be uniformly replaced with respect to the developer.
[0005]
Further, for example, when the surfactant contains impurities such as particles, a product defect may occur when the rinse liquid containing the surfactant is supplied onto the substrate.
[0006]
In view of the circumstances as described above, an object of the present invention is to uniformly supply a rinsing liquid onto a substrate when a processing solution such as a developing solution is washed away. It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of preventing the impurities from adhering to the substrate even when impurities are included in the rinse liquid.
[0007]
[Means for Solving the Problems]
  In order to achieve the above object, a substrate processing apparatus according to a first aspect of the present invention includes a means for supplying a processing liquid onto a substrate and a rinsing liquid containing a first processing agent for reducing surface tension. An elongated nozzle that discharges onto a substrate to which a processing liquid is supplied;A mechanism for moving the nozzle in a horizontal direction at least on the substrate in a direction substantially perpendicular to the longitudinal direction of the nozzle. The nozzle is moved by the moving mechanism, and the nozzle is in contact with the processing liquid on the substrate. While rinsing liquid is discharged.
[0008]
  In the present invention, since the rinsing liquid having a reduced surface tension is discharged onto the substrate supplied with the processing liquid by the elongated nozzle, the rinsing liquid can be uniformly diffused on the substrate, and the pattern The fall can be prevented. Here, the processing solution is, for example, a developing solution, but also includes a pure water supplied onto the substrate after the developing solution is supplied onto the substrate. In this case, after the developing solution is replaced with pure water, the rinsing solution of the present invention can be supplied onto the substrate to uniformly replace the pure water. In addition, a nonionic surfactant can be used as the first treatment agent.The rinsing liquid can be uniformly supplied to the entire surface of the substrate while gradually replacing the treatment liquid with the rinsing liquid. Since the impact on the substrate due to the discharge of the rinsing liquid can be reduced as compared with the case where the rinsing liquid is discharged by separating the nozzle from the processing liquid on the substrate, pattern collapse can be effectively prevented. Further, by moving the nozzle on the substrate while being in contact with the processing liquid, the processing liquid can be replaced with the rinsing liquid while being scraped and removed to some extent by the nozzle, so that the replacement can be performed efficiently.
[0009]
In one embodiment of the present invention, the rinsing liquid further includes a second processing agent that disperses impurities present in the processing liquid and the rinsing liquid. Conventionally, when a rinsing liquid containing impurities is supplied onto a substrate, there is a high possibility that the impurities gather and adhere to the resist pattern. However, according to the present invention, since the impurities can be diffused by the second treatment agent, the impurities can flow simultaneously when the rinse liquid flows from the substrate, and there is no problem. Here, an anionic surfactant can be used as the second treating agent.
[0010]
  One aspect of the present invention is,By using a nozzle whose length is substantially the same as or longer than the diameter of the substrate, a more uniform rinsing liquid can be supplied. The discharge amount of the rinsing liquid is preferably 40 ml to 500 ml per substrate. This is because if the amount exceeds 500 ml, the flow rate may increase when the rinsing liquid is discharged, and pattern collapse tends to occur. On the other hand, if the amount is less than 40 ml, there is a possibility that it cannot be uniformly supplied to the entire surface of the substrate. More preferably, it is 100 ml-200 ml.
[0011]
  One aspect of the present invention is,The nozzle is preferably disposed at a height of 0.5 mm to 1.5 mm from the substrate surface. This is because it is difficult to control the contact between the nozzle and the substrate surface in a range lower than 0.5 mm. Since the processing liquid is deposited on the substrate at a height of about 2 mm, it is ensured at a position lower than 2 mm. This is for removing the treatment liquid.
[0012]
Further, by setting the height of the nozzle as described above, while the nozzle is discharging the rinse liquid, the amount of the rinse liquid already supplied onto the substrate and the rinse liquid currently discharged are continuously and integrally formed. It will cause little impact.
[0013]
In one embodiment of the present invention, the nozzle is on the side in the movement direction of the nozzle and formed on the side opposite to the movement direction of the nozzle, and a right-angled portion formed from the lower end portion contacting the processing liquid on the substrate to the upper side. And a curved portion formed upward from the lower end portion. In the present invention, when the nozzle is moved in contact with the processing liquid, it is possible to promote the action of scraping and removing the processing liquid at the right-angle shaped part formed on the moving direction side, and on the opposite side to the moving direction. The curved portion formed in the step can promote the action of uniformizing the discharged rinse liquid.
[0014]
In one embodiment of the present invention, the nozzle includes means for discharging a rinsing liquid obliquely toward the moving direction of the nozzle. Thereby, since there exists an effect | action which displaces and removes the process liquid on a board | substrate to the moving direction of a nozzle, it can replace with a rinse liquid effectively.
[0015]
One embodiment of the present invention further includes a mechanism for rotating the nozzle in a plane parallel to the substrate surface, and discharges the rinse liquid while rotating the nozzle by the rotation mechanism. For example, when the length of the nozzle is almost the same as the diameter of the substrate, the rinsing liquid can be uniformly supplied to the entire surface of the substrate by rotating the nozzle by 180 ° or more.
[0016]
In one embodiment of the present invention, the nozzle is configured such that the discharge direction of the rinse liquid from the central part to one end part and the discharge direction of the rinse liquid from the central part to the other end part are oblique to the rotation direction of the nozzle. It is formed to face. As a result, for example, when the rinse liquid is discharged while rotating around the center of the nozzle, the rinse liquid can be discharged so as to face the rotation direction, so that the processing liquid on the substrate is pushed in the nozzle movement direction. It can be effectively replaced with a rinsing solution.
[0017]
In one embodiment of the present invention, the nozzle includes means for discharging a rinsing liquid so as to gradually face the outside of the substrate from the center to the end of the nozzle. Thereby, it can remove so that a process liquid may be diffused toward the peripheral part from the center part of a board | substrate, and a rinse liquid can be supplied uniformly. Also, if the rinsing liquid is discharged so that the discharge amount gradually decreases from the central part to the end part of the nozzle, the rinsing liquid flows from the central part to the peripheral part of the substrate. The rinsing liquid can be supplied uniformly over the entire surface of the substrate.
[0018]
  A substrate processing apparatus according to a second aspect of the present invention includes a rotation holding unit that rotatably holds a substrate, means for supplying a processing liquid onto the substrate held by the rotation holding unit, and a processing liquid. A long nozzle for discharging a rinsing liquid containing a first treatment agent for reducing the surface tension on the substrate rotated by the rotation holding unit;Then, the rinsing liquid is discharged while the nozzle is in contact with the processing liquid on the substrate.
[0019]
  In the present invention, since the rinsing liquid having a reduced surface tension is discharged onto the substrate supplied with the processing liquid by the elongated nozzle, the rinsing liquid can be uniformly diffused on the substrate, and the pattern The fall can be prevented. In particular, for example, since the rinse liquid is discharged while rotating the substrate with respect to a stationary long nozzle, the rinse liquid can be uniformly discharged over the entire surface of the substrate.By moving the nozzle on the substrate while being in contact with the processing liquid, the processing liquid can be replaced with the rinsing liquid while being scraped and removed to some extent by the nozzle, so that the replacement can be performed efficiently.The nozzle length is preferably the same as the substrate diameter or shorter than the substrate diameter. If the length of the nozzle is almost the same as the diameter of the substrate, the substrate can be supplied to the entire surface by rotating the substrate by 180 ° or more. If it rotates more than the rotation, it can be supplied to the entire surface of the substrate.
[0020]
In one embodiment of the present invention, the number of rotations of the substrate is 500 rpm or less. Thus, pattern fall can be prevented by setting it as a comparatively low rotation speed. More preferably, it is 100 rpm or less.
[0021]
When the length of the nozzle is substantially the same as the diameter of the substrate, the discharge direction of the rinse liquid from the central part to one end part and the discharge direction of the rinse liquid from the central part to the other end part are The nozzles are formed so as to be inclined obliquely relative to the substrate. As a result, the rinsing liquid can be discharged so as to face the relative nozzle rotation direction, so that the action of removing the processing liquid on the substrate by pushing it in the nozzle movement direction works and the rinsing is effectively performed. Can be replaced with liquid.
[0022]
According to one aspect of the present invention, when the length of the nozzle is substantially the same as the radius of the substrate, the nozzle gradually discharges from the center of the substrate to the peripheral portion on the substrate. And a means for discharging a rinse liquid. Thereby, it can remove so that a process liquid may flow toward the peripheral part from the center part of a board | substrate, and it can supply a rinse liquid uniformly.
[0023]
  A substrate processing method according to a first aspect of the present invention includes a step of supplying a processing liquid onto a substrate, and a step of reducing surface tension while moving an elongated nozzle on the substrate supplied with the processing liquid. And a step of discharging a rinse liquid containing one treatment agent from the nozzle.In the step of discharging the rinse liquid from the nozzle, the nozzle discharges the rinse liquid while being in contact with the processing liquid on the substrate.To do.
[0024]
  In the present invention, since the rinsing liquid having a reduced surface tension is discharged onto the substrate supplied with the processing liquid by the elongated nozzle, the rinsing liquid can be uniformly diffused on the substrate, and the pattern The fall can be prevented.By moving the nozzle on the substrate while being in contact with the processing liquid, the processing liquid can be replaced with the rinsing liquid while being scraped and removed to some extent by the nozzle, so that the replacement can be performed efficiently.
[0025]
  The substrate processing method according to the second aspect of the present invention includes a step of supplying a processing liquid onto the substrate, and a first processing agent that reduces the surface tension while rotating the substrate supplied with the processing liquid. And a step of discharging the rinse liquid onto the substrate by a long-shaped nozzle.In the step of discharging the rinsing liquid onto the substrate by a long nozzle, the rinsing liquid is discharged while the nozzle is in contact with the processing liquid on the substrate.To do.
[0026]
  In the present invention, for example, the rinsing liquid is discharged while rotating the substrate with respect to the stationary long nozzle, so that the rinsing liquid can be discharged uniformly over the entire surface of the substrate.By moving the nozzle on the substrate while being in contact with the processing liquid, the processing liquid can be replaced with the rinsing liquid while being scraped and removed to some extent by the nozzle, so that the replacement can be performed efficiently.
[0027]
DETAILED DESCRIPTION OF THE INVENTION
1 to 3 are views showing an overall configuration of a coating and developing treatment apparatus according to an embodiment of the present invention. FIG. 1 is a plan view, and FIGS. 2 and 3 are a front view and a rear view.
[0028]
The coating and developing treatment apparatus 1 carries a plurality of semiconductor wafers W in the wafer cassette CR, for example, in units of 25, from the outside to the apparatus 1 or unloads from the apparatus 1, or carries in / out the wafer W from / to the wafer cassette CR. A cassette station 10 for processing, a processing station 12 in which various single-wafer processing units for performing predetermined processing on the wafer W one by one in the coating and developing process are arranged in multiple stages at predetermined positions, and this processing The interface unit 14 for transferring the wafer W between the station 12 and the exposure apparatus 100 provided adjacent to the station 12 is integrally connected.
[0029]
In the cassette station 10, as shown in FIG. 1, a plurality of, for example, five wafer cassettes CR are mounted in a row in the X direction at the position of the protrusion 20 a on the cassette mounting table 20 with the respective wafer entrances facing the processing station 12 side. The wafer carrier 22 that is placed and movable in the cassette arrangement direction (X direction) and in the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. ing. Further, the wafer transfer body 22 is configured to be rotatable in the θ direction so that it can also access a heat treatment system unit belonging to a third processing unit section G3 having a multistage structure, which will be described later, as shown in FIG. It has become.
[0030]
As shown in FIG. 1, the processing station 12 includes a third processing unit G3, a fourth processing unit G4, and a fifth processing unit G5 from the cassette station 10 side on the rear side of the apparatus (upper side in the drawing). A first main wafer transfer device A1 is provided between each of the third processing unit part G3 and the fourth processing unit part G4. In the first main wafer transfer device A1, the first main wafer transfer body 16 selectively accesses the first processing unit G1, the third processing unit G3, the fourth processing unit G4, and the like. It is installed so that it can. Further, a second main wafer transfer device A2 is provided between the fourth processing unit G4 and the fifth processing unit G5, and the second main wafer transfer device A2 is similar to the first, The second main wafer carrier 17 is installed so as to selectively access the second processing unit part G2, the fourth processing unit part G4, the fifth processing unit part G5, and the like.
[0031]
Further, a heat treatment unit is installed on the back side of the first main wafer transfer apparatus A1, and for example, an adhesion unit (AD) 110 for hydrophobizing the wafer W, a heating unit (for heating the wafer W) ( HP) 113 are stacked in multiple stages as shown in FIG. The adhesion unit (AD) may further include a mechanism for adjusting the temperature of the wafer W. On the back side of the second main wafer transfer device A2, a peripheral exposure device (WEE) 120 that selectively exposes only the edge portion of the wafer W, and a film thickness inspection device that inspects the resist film thickness applied to the wafer W 119 and line width inspection devices 118 for inspecting the line width of the resist pattern are provided in multiple stages. The film thickness inspection apparatus 119 and the line width inspection apparatus 118 may be provided outside the apparatus without being provided in the coating and developing treatment apparatus 1 as described above. In addition, a heat treatment unit (HP) 113 may be arranged on the back side of the second main wafer transfer device A2 in the same manner as the back side of the first main wafer transfer device A1.
[0032]
As shown in FIG. 3, in the third processing unit G3, an oven-type processing unit that performs a predetermined process by placing the wafer W on a mounting table, for example, a high-temperature heat processing unit that performs a predetermined heat process on the wafer W (BAKE), a cooling processing unit (CPL) that cools the wafer W with accurate temperature control, a transition unit (TRS) that serves as a transfer unit of the wafer W from the wafer transport body 22 to the main wafer transport body 16, The transfer / cooling processing units (TCP), which are separately provided in the upper and lower two stages, are divided into a transfer part and a cooling part, for example, are stacked in 10 stages in order from the top. In the third processing unit G3, in the present embodiment, the third stage from the bottom is provided as a spare space. Even in the fourth processing unit G4, for example, a post-baking unit (POST), a transition unit (TRS) serving as a wafer transfer unit, a pre-baking unit (PAB) that heat-treats the wafer W after forming a resist film, and a cooling processing unit (CPL) is stacked in, for example, 10 stages in order from the top. Further, in the fifth processing unit G5, for example, as a thermal processing means, a post-exposure baking unit (PEB) for performing heat treatment on the exposed wafer W, a cooling processing unit (CPL), and a wafer W transfer unit. For example, transition units (TRS) are stacked in 10 stages in order from the top, for example.
[0033]
For example, as shown in the fourth processing unit part G4 of FIG. 1, the heating processing unit includes a temperature control plate C for controlling the temperature of the wafer W on the front side, and heating for heating the wafer W. A plate H is disposed on the back side.
[0034]
In FIG. 1, a first processing unit part G1 and a second processing unit part G2 are provided side by side in the Y direction on the front side of the processing station 12 (downward in the drawing). Between the first processing unit part G1 and the cassette station 10 and between the second processing unit part G2 and the interface part 14, it is used for temperature control of the processing liquid supplied by the processing unit parts G1 and G2. Liquid temperature control pumps 24 and 25 are provided, respectively, and clean air from an air conditioner (not shown) provided outside the coating and developing treatment apparatus 1 is supplied into the processing units G1 to G5. Ducts 31 and 32 are provided.
[0035]
As shown in FIG. 2, in the first processing unit G1, five spinner type processing units that perform predetermined processing by placing the wafer W on a spin chuck in a cup CP, for example, resist as a resist film forming unit. The coating processing unit (COT) has three stages, and a bottom coating unit (BARC) for forming an antireflection film for preventing reflection of light during exposure is superposed in two stages and five stages in order from the bottom. Similarly, in the second processing unit G2, five spinner type processing units, for example, development processing units (DEV) as development processing units are stacked in five stages. In the resist coating processing unit (COT), the drainage of the resist solution is troublesome both in terms of mechanism and maintenance, and thus is preferably arranged in the lower stage. However, it can be arranged in the upper stage as required.
[0036]
In addition, chemical chambers (CHM) 26 and 28 for supplying the above-described predetermined processing liquid to the respective processing unit units G1 and G2 are provided at the lowermost stages of the first and second processing unit units G1 and G2, respectively. Yes.
[0037]
A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages on the front surface of the interface section 14, and a wafer carrier 27 is provided in the center. The wafer carrier 27 moves in the X and Z directions to access both cassettes CR and BR. Further, the wafer carrier 27 is configured to be rotatable in the θ direction, and can also access the fifth processing unit G5. Further, as shown in FIG. 3, a plurality of high-precision cooling processing units (CPL) are provided on the back surface of the interface unit 14, for example, in two upper and lower stages. The wafer carrier 27 can also access this cooling processing unit (CPL).
[0038]
Next, the development processing unit (DEV) according to the present invention will be described in detail. 4 and 5 are a plan view and a cross-sectional view showing a development processing unit (DEV) according to an embodiment of the present invention.
[0039]
In this unit, a fan / filter unit F for supplying clean air into the casing 41 is mounted above the casing 41. In the lower part, an annular cup CP is disposed near the center of the unit bottom plate 51, which is smaller than the width of the casing 41 in the Y direction, and a spin chuck 42 is disposed inside thereof. The spin chuck 42 is configured to be rotated by the rotational driving force of the motor 43 while the wafer W is fixedly held by vacuum suction.
[0040]
In the cup CP, pins 48 for transferring the wafer W are provided so as to be moved up and down by a driving device 47 such as an air cylinder. As a result, the wafer can be delivered to and from the main wafer transfer body 17 through the opening 41a while the shutter 52 provided to be openable and closable is open. A drain port 45 for waste liquid is provided at the bottom of the cup CP. A waste liquid pipe 33 is connected to the drain port 45, and the waste liquid pipe 33 communicates with a waste liquid port (not shown) below using a space N between the unit bottom plate 51 and the housing 41.
[0041]
The developing solution nozzle 53 for supplying the developing solution to the surface of the wafer W is formed in, for example, an elongated shape having a length substantially the same as the diameter of the wafer W, and is connected to the chemical chamber (CHM) via the supply pipe 34. 27 (FIG. 2) is connected to a developer tank (not shown). The developer nozzle 53 is detachable from the nozzle holding member 60 of the nozzle scan arm 36. The nozzle scan arm 36 is attached to an upper end portion of a vertical support member 49 that is horizontally movable on a guide rail 44 laid in one direction (Y direction) on the unit bottom plate 51. For example, the nozzle scan arm 36 is vertically driven by a belt drive mechanism. It moves in the Y direction integrally with the support member 49. As a result, the developer nozzle 53 waits on the developer nozzle bus 46 disposed outside the cup CP except when the developer is supplied, and is transferred to the wafer W when the developer is supplied. It has become. The developer nozzle 53 has, for example, a plurality of discharge holes (not shown) formed at the lower end thereof, and the developer is discharged from the plurality of discharge holes.
[0042]
Further, a guide rail 144 for a rinse nozzle is laid on the side of the cup CP in parallel with the guide rail 44, for example. A vertical support 149 is installed on the guide rail 144 so as to be movable in the Y direction by, for example, a belt drive mechanism. A motor 78 is attached to the upper portion of the vertical support 149, and a rinse nozzle arm 136 is attached to be movable in the X direction by, for example, a ball screw mechanism. A rinse nozzle 153 is attached to the rinse nozzle arm 136 via a nozzle holding member 160.
[0043]
The rinse nozzle arm 136 is configured to be movable, for example, in the vertical direction (Z direction) by a vertical support 149 having an air cylinder mechanism, for example, so that the height of the rinse nozzle 153 is adjusted. It has become. Specifically, the height relative to the wafer W held by the spin chuck 42 can be adjusted. The movement of the XYZ movement mechanism for moving the rinse nozzle 153 is controlled by the movement mechanism controller 40, whereby the rinse nozzle bus 146 on which the rinse nozzle 153 is on standby and the cup CP. It is possible to move between the wafers W accommodated in the wafer. The developer on the wafer is washed away by discharging the rinse liquid from the rinse nozzle 153 onto the wafer. In FIG. 5, the rinse nozzle 153 is omitted.
[0044]
6 and 7 are perspective views from below of the rinse nozzle 153 according to the first embodiment. The rinse nozzle 153 has an elongated shape like the developer nozzle 53, and a slit for discharging the rinse liquid supplied from the supply pipe 63 onto the wafer W as shown in FIG. A shaped discharge port 64 is formed. FIG. 7 shows a rinse nozzle according to another embodiment. Similarly, a plurality of holes 66 for discharging the rinse liquid supplied from the supply pipe 63 onto the wafer are formed.
[0045]
FIG. 8 is a schematic configuration diagram of a supply mechanism for supplying the rinse liquid.
[0046]
A first supply pipe 61 is connected to a pure water tank 37 in which pure water is stored, and a surfactant tank 38 in which, for example, a surfactant that reduces the surface tension of pure water is stored is connected to the pure water tank 37. A second supply pipe 62 is connected. In this embodiment, for example, a nonionic surfactant is used as the surfactant. The supply pipes 61 and 62 are connected to, for example, a static mixer 56, and the static mixer 56 is connected to the rinse nozzle 153 through a supply pipe 63. A first bellows pump 54 is connected to the first supply pipe 61 between the pure water tank 37 and the static mixer 56, and pure water is supplied to the static mixer 56 by the operation of the first bellows pump 54. It is like that. A second bellows pump 55 is connected to the second supply pipe 62 between the surfactant tank 38 and the static mixer 56, and the surfactant is supplied to the static mixer 56 by the operation of the second bellows pump 55. Is to be supplied. The operating amounts of the first and second bellows pumps 37 and 38 are controlled by the control unit 65. By mixing the pure water and the surfactant by the static mixer 56, a rinsing liquid having a predetermined concentration having a surface tension lower than the surface tension of the pure water is created, and this rinsing liquid is supplied to the rinsing nozzle via the supply pipe 63. 153 to be supplied.
[0047]
Next, an example of processing steps in the coating and developing treatment apparatus 1 configured as described above will be described.
[0048]
First, in the cassette station 10, the wafer carrier 22 accesses the cassette CR containing the unprocessed wafer W on the cassette mounting table 20 and takes out one wafer W from the cassette CR. The wafer W is transferred to the first main transfer apparatus A1 via the transfer / cooling processing unit (TCP), and is transferred into, for example, the adhesion unit (AD) 110 to be subjected to a hydrophobic treatment. Next, the film is transferred to, for example, a bottom coating unit (BARC), where an antireflection film may be formed to prevent reflection of exposure light from the wafer during exposure.
[0049]
Next, the wafer W and the wafer W are carried into a resist coating unit (COT) to form a resist film. When the resist film is formed, the wafer W is transferred to the pre-baking unit (PAB) by the first main transfer device A1. Here, first, the wafer W is placed on the temperature control plate C, the wafer W is moved to the heating plate H side while being temperature controlled, and is placed on the heating plate H and subjected to heat treatment. After the heat treatment is performed, the wafer W is transferred again to the first main transfer device A1 via the temperature control plate C. Thereafter, the wafer W is cooled at a predetermined temperature in a cooling processing unit (CPL).
[0050]
Next, the wafer W may be taken out by the second main transfer device A2 and transferred to the film thickness inspection device 119 to measure the resist film thickness. Then, the wafer W is transferred to the exposure apparatus 100 via the transition unit (TRS) and the interface unit 14 in the fifth processing unit G5, and is subjected to exposure processing here. When the exposure process is completed, the wafer W is transferred to the second main transfer device A2 via the interface unit 14 and the transition unit (TRS) in the fifth processing unit G5, and then the post-exposure baking unit (PEB). Temperature control and heat treatment are performed. After the exposure process, the wafer W may be temporarily stored in the buffer cassette BR in the interface unit 14.
[0051]
Then, the wafer W is conveyed to a development processing unit (DEV) and subjected to development processing. After this development processing, a predetermined heat treatment (post-baking) may be performed. After the development process is completed, the wafer W is subjected to a predetermined cooling process in the cooling unit (COL) and returned to the cassette CR through the extension unit (EXT).
[0052]
Next, the operation of the development processing unit (DEV) will be described.
[0053]
First, as shown in FIGS. 9A and 9B, the developer is discharged while moving the developer nozzle 53 on the stationary wafer W in the direction indicated by the arrow A, and the developer is accumulated on the wafer W. It is done. Then, the developing process is performed for a predetermined time, for example, 60 seconds while the developer is piled up on the entire surface of the wafer. Next, as shown in FIG. 10A, the rinse nozzle 153 is disposed at a predetermined position outside the peripheral edge of the wafer W. At this time, the distance t between the lower end portion of the rinse nozzle 153 and the surface of the wafer W is arranged at a position smaller than the thickness of the developer 50 deposited on the wafer. Then, while maintaining this distance t, the rinse liquid is discharged as shown in FIG. 10B while moving on the wafer in the same manner as the movement of the developer nozzle 53 shown in FIG. in this case,
In this way, by moving the rinse nozzle 153 in contact with the developer 50, the impact on the wafer due to the discharge of the rinse liquid compared to when the rinse nozzle 153 is separated from the developer on the wafer and the rinse liquid is discharged. Therefore, the pattern collapse can be effectively prevented. Further, by moving the rinse nozzle 153 while being in contact with the developer, the developer can be replaced with the rinse solution while being scraped and removed to some extent by the nozzle 153, so that the replacement can be performed efficiently. In this case, the distance t is preferably 0.5 mm to 1.5 mm. This is because it is difficult to control the contact between the nozzle 153 and the wafer surface in a range lower than 0.5 mm, and since the developer is deposited on the wafer at a height of about 2 mm, the position is surely lower than 2 mm. This is because the developer is removed.
[0054]
Further, with the height of the rinse nozzle 153, while the nozzle 153 is discharging the rinse liquid, the amount of the rinse liquid already supplied onto the wafer and the rinse liquid currently discharged are continuously and integrally formed. It will cause little impact.
[0055]
The discharge amount of the rinsing liquid is preferably 40 ml to 500 ml per substrate. This is because if it exceeds 500 ml, the flow rate at the time of discharging the rinsing liquid may increase, conversely, pattern collapse tends to occur, and if it is less than 40 ml, there is a possibility that it cannot be uniformly supplied to the entire wafer surface. The movement of the rinse nozzle 153 may reciprocate on the wafer to supply a predetermined amount of rinse liquid.
[0056]
After the rinsing liquid is supplied to the entire surface of the wafer as described above, the wafer W is rotated, the rinsing liquid is spun off by centrifugal force, and the wafer is dried. Since the rinse liquid having a reduced surface tension is used, the pattern collapse does not occur even if the shaking-drying process is performed in this way.
[0057]
As described above, in this embodiment, the rinsing liquid having a reduced surface tension is ejected by the long rinsing nozzle 153 having substantially the same length as the diameter of the wafer W. The rinsing liquid can be diffused, and pattern collapse can be prevented. Of course, the length of the rinse nozzle 153 may be longer than the diameter of the wafer W.
[0058]
FIG. 11 is a configuration diagram showing another embodiment of the rinsing liquid supply mechanism. In FIG. 11, the same components as those in FIG. 8 are denoted by the same reference numerals, and the description thereof is omitted.
[0059]
The rinse liquid supply mechanism further includes a dispersant tank 67 that stores the dispersant, and a third supply pipe 59 is connected to the dispersant tank 67. The third supply pipe 59 is connected to the static mixer 56, and a third bellows pump 58 is provided between the dispersant tank 67 and the static mixer 56. As the dispersant stored in the dispersant tank 67, for example, an anionic surfactant is used. Then, by controlling the operation of the third bellows pump 58 by the control unit 65, a dispersing agent is further mixed with a mixed liquid of pure water and a surfactant to create a rinsing liquid.
[0060]
As a result, conventionally, when a rinsing liquid containing impurities such as particles is supplied onto the wafer, there is a high possibility that the impurities gather and adhere to the resist pattern. However, according to the present embodiment, since the impurities can be diffused by the dispersant, there is no problem because the impurities can be simultaneously flowed when the rinse liquid flows from the wafer in the shake-off drying process.
[0061]
FIG.12 and FIG.13 is an expanded sectional view which shows 2nd Embodiment of a rinse nozzle.
[0062]
The rinsing nozzle 75A shown in FIG. 12 has a lower end portion of the discharge portion 70 for discharging the rinsing liquid and a moving direction side 70a indicated by an arrow E of the nozzle 75A formed in a right angle shape, while the moving direction of the nozzle 75A is The opposite side 70b is formed in a curved shape. Reference numeral 70c denotes a flow path for the rinsing liquid. By adopting such a shape, when the nozzle 75A is moved in contact with the developer 50, the action of scraping and removing the developer 50 with the right-angle shaped portion 70a can be promoted, and the curved portion The action of uniformly rinsing the rinse liquid 57 discharged by 70b can be promoted.
[0063]
In the rinse nozzle 75B shown in FIG. 13, the discharge flow path 70d is formed obliquely to the movement direction (arrow E) of the nozzle 75B with respect to the surface of the wafer W. Thereby, since there exists an effect | action which pushes and removes the developing solution 50 on a wafer to the moving direction of a nozzle, it can replace with the rinse liquid 57 effectively.
[0064]
The discharge flow paths 70c and 70d of the rinse nozzles 75A and 75B may be plural or slit-like as shown in FIG. 6 or FIG.
[0065]
Next, a case where the rinse liquid is discharged while rotating the wafer W will be described with reference to FIGS.
[0066]
In FIG. 14, the rinse liquid is discharged while rotating the wafer W while the rinse nozzle 153 </ b> A having substantially the same length as the diameter of the wafer W is stationary at the center of the wafer W. Thereby, if the wafer W is rotated by 180 ° or more, the rinse liquid 57 can be uniformly supplied to the entire surface of the wafer W. As a result, since the rinsing liquid is not discharged to the outside of the wafer W, the amount of the rinsing liquid used can be reduced as compared with the case where the nozzle is moved as in the above embodiment.
[0067]
In FIG. 15, a rinse nozzle 153 </ b> B having a length substantially the same as the radius of the wafer W is placed so that one end thereof is positioned at the center of the wafer W, and the rinse liquid is rotated while rotating the wafer W. Is discharged. Thereby, if the wafer W is rotated by 360 ° or more, the rinse liquid 57 can be uniformly supplied to the entire surface of the wafer W. In this case as well, since the rinsing liquid is not discharged to the outside of the wafer W, the amount of the rinsing liquid used can be reduced and the nozzle 153B can be formed shorter than in the case of moving the nozzle as in the above embodiment. Manufacturing cost can be reduced.
[0068]
Further, in the embodiment shown in FIGS. 14 and 15, the rotation speed of the wafer W is set to 500 rpm or less. By setting the number of rotations to a relatively low value in this way, the impact that the wafer W receives by the rotation can be reduced as much as possible, and pattern collapse can be prevented. In this case, more preferably, it is 100 rpm or less.
[0069]
Next, a third embodiment of the rinse nozzle will be described with reference to FIG. In the present embodiment, similarly to the case shown in FIG. 14, the rinsing liquid is discharged by the rinsing nozzle 80 which is stationary while rotating the wafer. The discharge flow path of the rinse nozzle 80 has, for example, an oblique flow path 70d shown in FIG. The rinsing liquid discharge direction D1 from the central part of the nozzle 80 to the one end part 80a and the rinsing liquid discharge direction D2 from the central part to the other end part 80b are opposite to each other as indicated by arrows. This is because when the rotation direction of the wafer W is the direction of the arrow R, the rinsing liquid is discharged so as to be directed in the relative rotation direction of the nozzle 80 with respect to the wafer W. Thereby, the action of removing the developer on the wafer in the moving direction of the nozzle 80 works, and the rinse liquid can be effectively replaced.
[0070]
Next, a fourth embodiment of the rinse nozzle will be described. FIG. 17 is a view of the rinse nozzle as seen from below, and the rinse nozzle shown in FIG. 17A has a plurality of discharge holes 66 formed so that the diameter gradually decreases from the center to the end of the nozzle. Yes. In addition, the rinse nozzle shown in FIG. 17B is formed such that the pitch between the plurality of ejection holes 66 gradually increases from the center to the end of the nozzle. By discharging the rinsing liquid with the rinsing nozzles such as these, the flow rate of the rinsing liquid discharged from the peripheral part of the wafer is increased at the central part and flows from the central part of the wafer to the peripheral part. It can be removed efficiently and the rinsing liquid can be supplied uniformly over the entire surface of the wafer. These nozzles are particularly effective when used for discharging the rinsing liquid while rotating the wafer shown in FIG.
[0071]
FIG. 18 is a front view showing a fifth embodiment of the rinse nozzle. The rinse nozzle shown in FIG. 18A is formed such that a plurality of ejection holes 68 for ejecting the rinse liquid gradually face the outside of the wafer W from the central portion to the end portion of the nozzle. Further, the length of the rinse nozzle shown in FIG. 18B has substantially the same length as the radius of the wafer W, and the plurality of discharge holes 68 are gradually formed on the wafer W from the wafer central portion to the peripheral portion. It is formed so as to face the outside of the wafer W. By rinsing the rinsing liquid with these rinsing nozzles, the processing liquid can be removed so as to diffuse from the center to the peripheral edge of the wafer, and the rinsing liquid can be supplied uniformly. These nozzles are particularly effective when used for discharging the rinsing liquid while rotating the wafer shown in FIG.
[0072]
The present invention is not limited to the embodiments described above, and various modifications are possible.
[0073]
In the above-described embodiment, the rinse liquid with reduced surface tension is supplied onto the wafer supplied with the developer. For example, after the developer is replaced with pure water, the rinse with reduced surface tension is added to the pure water. A liquid may be supplied to replace the pure water with the rinse liquid.
[0074]
In the rinse nozzle shown in FIG. 13, the discharge flow path 70d is inclined with respect to the wafer. However, the rinse nozzle shown in FIG. 12 may be discharged with the rinse nozzle itself tilted as it is. .
[0075]
In the embodiment shown in FIGS. 14 and 15, the rinsing liquid is discharged while rotating the wafer. However, the rinsing nozzles 153A and 153B are provided with a rotation mechanism, and the nozzles 153A and 153B are parallel to the surface of the wafer. You may make it rotate within.
[0076]
It is also possible to adjust the temperature of pure water used for the rinse liquid. In this case, for example, it is preferable to maintain the temperature of pure water at 50 ° C to 60 ° C. Thus, the surface tension of pure water can be lowered by setting the temperature of pure water to a relatively high temperature, and as a result, the surface tension of the rinse liquid can be lowered. Therefore, the amount of surfactant added can be reduced. The upper limit is set to 60 ° C. because when the temperature exceeds 60 ° C., the resist on the wafer may be dissolved.
[0077]
In the above-described embodiment, the rinse nozzle is moved while being in contact with the developer on the wafer. For example, when a resist with a low aspect ratio that does not cause pattern collapse is to be processed, the rinse nozzle, the developer, It is also possible to discharge the rinsing liquid by releasing the button.
[0078]
Furthermore, in the said embodiment, although the semiconductor wafer was used as a board | substrate, the glass substrate used for not only this but a liquid crystal device may be used.
[0079]
【The invention's effect】
As described above, according to the present invention, the rinsing liquid can be uniformly supplied onto the substrate when the processing liquid such as the developer is washed away. Moreover, even when impurities are contained in the treatment liquid or the rinse liquid by adding the dispersant to the rinse liquid, the impurities can be prevented from adhering to the substrate, and product defects do not occur.
[Brief description of the drawings]
FIG. 1 is a plan view of a coating and developing treatment apparatus to which the present invention is applied.
FIG. 2 is a front view of the coating and developing treatment apparatus shown in FIG.
FIG. 3 is a rear view of the coating and developing treatment apparatus shown in FIG.
FIG. 4 is a plan view of a development processing unit according to an embodiment of the present invention.
FIG. 5 is a cross-sectional view of the development processing unit shown in FIG.
FIG. 6 is a perspective view from below showing the rinse nozzle according to the first embodiment.
7 is a perspective view from below showing another example of the rinse nozzle in FIG. 6. FIG.
FIG. 8 is a configuration diagram of a rinse liquid supply mechanism according to an embodiment.
FIG. 9 is a diagram illustrating an operation when supplying a developing solution in a developing process.
FIG. 10 is a diagram showing an operation when supplying a rinsing liquid in the development processing.
FIG. 11 is a configuration diagram showing a rinse liquid supply mechanism according to another embodiment.
FIG. 12 is an enlarged view of a rinse nozzle according to a second embodiment of the present invention.
13 is an enlarged view showing another example of the rinse nozzle shown in FIG.
FIG. 14 is a perspective view according to an embodiment for discharging a rinsing liquid while rotating a substrate.
FIG. 15 is a perspective view according to an embodiment in which a rinse liquid is discharged while rotating the substrate.
FIG. 16 is a plan view for explaining a rinse nozzle according to a third embodiment of the present invention.
FIG. 17 is a plan view from the bottom of a rinse nozzle according to a fourth embodiment of the present invention.
FIG. 18 is a front view of a rinse nozzle according to a fifth embodiment of the present invention.
[Explanation of symbols]
W ... Semiconductor wafer
t ... distance
D1, D2 ... discharge direction
37 ... Pure water tank
38 ... Surfactant tank
40 ... Movement mechanism controller
42 ... Spin chuck
43 ... Motor
50. Developer
53 ... Developer nozzle
54, 55, 58 ... Bellows pump
56 ... Static mixer
57 ... Rinse solution
64: Discharge port
65 ... Control unit
66 ... discharge hole
67 ... Dispersant tank
68: Discharge hole
70: Discharge part
75A, 75B, 80, 153, 153A, 153B ... rinse nozzle

Claims (29)

Means for supplying a treatment liquid onto the substrate;
An elongated nozzle that discharges a rinsing liquid containing a first processing agent that reduces surface tension onto a substrate supplied with the processing liquid ;
A mechanism for moving the nozzle in a horizontal direction at least on the substrate in a direction substantially perpendicular to the longitudinal direction thereof,
A substrate processing apparatus , wherein the nozzle is moved by the moving mechanism and the rinsing liquid is discharged while the nozzle is in contact with the processing liquid on the substrate. The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the first processing agent is a nonionic surfactant. The substrate processing apparatus according to claim 1,
The rinsing liquid further includes a second processing agent for dispersing impurities present in the processing liquid and the rinsing liquid. The substrate processing apparatus according to claim 3, wherein
The substrate processing apparatus, wherein the second processing agent is an anionic surfactant. The substrate processing apparatus according to claim 1,
A discharge amount of the rinse liquid is 40 ml to 500 ml per substrate. The substrate processing apparatus according to claim 1,
The length of the nozzle is substantially the same as the diameter of the substrate or longer than the diameter of the substrate. The substrate processing apparatus according to claim 1,
The substrate processing apparatus further comprising means for disposing the nozzle at a height position of 0.5 mm to 1.5 mm from the substrate surface. The substrate processing apparatus according to claim 1,
The nozzle includes a right-angled shape portion formed from the lower end portion contacting the processing liquid on the substrate to the upper side on the moving direction side of the nozzle, and the opposite side of the nozzle moving direction from the lower end portion to the upper side. A substrate processing apparatus, comprising: a curved portion formed. The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the nozzle includes means for discharging a rinsing liquid obliquely toward the moving direction of the nozzle. The substrate processing apparatus according to claim 1,
A substrate processing apparatus, further comprising a mechanism for rotating the nozzle in a plane parallel to the substrate surface, wherein the rinsing liquid is discharged while the nozzle is rotated by the rotating mechanism. The substrate processing apparatus according to claim 10, comprising:
The length of the said nozzle is substantially the same as the diameter of a board | substrate. The substrate processing apparatus characterized by the above-mentioned. The substrate processing apparatus according to claim 11,
The nozzle is formed such that the discharge direction of the rinsing liquid from the center to one end and the discharge direction of the rinsing liquid from the center to the other end are oblique to the rotation direction of the nozzle. A substrate processing apparatus. The substrate processing apparatus according to claim 11,
The substrate processing apparatus according to claim 1, wherein the nozzle includes means for discharging a rinsing liquid so as to gradually face the outside of the substrate from a central portion to an end portion of the nozzle. The substrate processing apparatus according to claim 11,
The substrate processing apparatus, wherein the nozzle includes means for discharging a rinsing liquid so that a discharge amount gradually decreases from a central portion to an end portion of the nozzle. A rotation holding unit for holding the substrate rotatably;
Means for supplying a processing liquid onto the substrate held by the rotation holding unit;
A long nozzle for discharging a rinsing liquid containing a first processing agent that lowers the surface tension onto a substrate that is supplied with the processing liquid and rotated by the rotation holding unit ;
A substrate processing apparatus, wherein the nozzle discharges a rinsing liquid while being in contact with the processing liquid on the substrate. The substrate processing apparatus according to claim 15, wherein
The substrate processing apparatus, wherein the first processing agent is a nonionic surfactant. The substrate processing apparatus according to claim 15, wherein
The rinsing liquid further includes a second processing agent for dispersing impurities present in the processing liquid and the rinsing liquid. The substrate processing apparatus according to claim 17,
The substrate processing apparatus, wherein the second processing agent is an anionic surfactant. The substrate processing apparatus according to claim 15, wherein
A discharge amount of the rinse liquid is 40 ml to 500 ml per substrate. The substrate processing apparatus according to claim 15, wherein
The length of the nozzle is substantially the same as the diameter of the substrate or shorter than the diameter of the substrate. The substrate processing apparatus according to claim 15, wherein
The number of rotations of the substrate is 500 rpm or less. The substrate processing apparatus according to claim 21, wherein
The number of rotations of the substrate is 100 rpm or less. The substrate processing apparatus according to claim 15, wherein
A substrate processing apparatus, further comprising means for disposing the nozzle at a height of 0.5 mm to 1.5 mm from the held substrate surface. The substrate processing apparatus according to claim 20, wherein
When the length of the nozzle is substantially the same as the diameter of the substrate, the discharge direction of the rinse liquid from the central part to one end part and the discharge direction of the rinse liquid from the central part to the other end part are The substrate processing apparatus is characterized in that the nozzle is formed so as to be inclined obliquely relative to the substrate relative to the substrate. The substrate processing apparatus according to claim 20, wherein
The nozzle includes means for discharging a rinsing liquid so that the nozzle is gradually directed to the outside from the center to the end of the nozzle when the length is substantially the same as the diameter of the substrate. A substrate processing apparatus. The substrate processing apparatus according to claim 20, wherein
When the nozzle has a length substantially the same as the radius of the substrate, the nozzle has means for discharging a rinsing liquid so that the discharge amount gradually decreases from the center of the substrate to the peripheral portion on the substrate. A substrate processing apparatus comprising the substrate processing apparatus. The substrate processing apparatus according to claim 20, wherein
When the nozzle has a length substantially the same as the diameter of the substrate, the nozzle includes means for discharging a rinsing liquid so that the discharge amount gradually decreases from the center to the end of the nozzle. A substrate processing apparatus. Supplying a processing liquid onto the substrate;
Discharging a rinsing liquid containing a first treatment agent that lowers the surface tension from the nozzle while moving the elongated nozzle on the substrate supplied with the treatment liquid , and
In the step of discharging the rinsing liquid from the nozzle, the rinsing liquid is discharged while the nozzle is in contact with the processing liquid on the substrate. Supplying a processing liquid onto the substrate;
A step of discharging a rinse liquid containing a first treatment agent that reduces the surface tension while rotating the substrate supplied with the treatment liquid onto the substrate by using a long-shaped nozzle , and
In the step of discharging the rinse liquid onto the substrate with a long nozzle , the substrate processing method includes discharging the rinse liquid while the nozzle is in contact with the processing liquid on the substrate.

Images