CN115025896B

CN115025896B - Nozzle, semiconductor substrate processing method and substrate processing equipment

Info

Publication number: CN115025896B
Application number: CN202210618308.7A
Authority: CN
Inventors: 梅晓波
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2022-06-01
Filing date: 2022-06-01
Publication date: 2023-06-23
Anticipated expiration: 2042-06-01
Also published as: CN115025896A

Abstract

The present disclosure provides a nozzle, a method of processing a semiconductor substrate, and a substrate processing apparatus. The nozzle is used for discharging the treatment liquid to the substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; comprising the following steps: the support main body is in an inverted truncated cone shape; the support body has a first end face and a second end face; the central axis of the first end face and the central axis of the second end face are coincident with the central axis of the bearing table, the diameter of the first end face is larger than that of the second end face, and the distance between the first end face and the bearing table is larger than that between the second end face and the bearing table; a slim nozzle group including a plurality of slim nozzles; the liquid inlet end of the thin pipe nozzle is arranged on the first end face, the liquid outlet end of the thin pipe nozzle is arranged on the second end face, and the liquid outlet direction when the liquid outlet end discharges the treatment liquid is provided with a direction vector consistent with the target rotation direction; the target rotation direction is a rotation direction of the substrate. The nozzle can improve the production efficiency and yield of the substrate.

Description

Nozzle, semiconductor substrate processing method and substrate processing equipment

Technical Field

The present disclosure relates to the field of integrated circuit manufacturing technology, and in particular, to a nozzle, a method for processing a semiconductor substrate, and a substrate processing apparatus.

Background

Generally, in a wet process of a semiconductor, in which a semiconductor substrate (e.g., a wafer) is placed in a single chip stage, a process liquid is sprayed to the wafer to chemically react the surface of the wafer or remove particles attached to the surface of the wafer, and reaction byproducts or particles are flowed to the outside of the wafer along with waste, the wet process is etched or cleaned by a wet process to improve the surface structure or cleanliness of the wafer.

At present, when a wafer is wet etched or cleaned by most single chip microcomputer stations, when a nozzle sprays treatment liquid to the surface of the wafer, the treatment liquid or waste liquid often splashes to the side wall of the nozzle or a cavity under the action of the rotating wafer and then drips onto the wafer after the process is finished, so that the reaction uniformity or cleanliness of the surface of the wafer is adversely affected, the wet etching or cleaning efficiency of the wafer is reduced, and the yield of the wafer is reduced.

Disclosure of Invention

The embodiment of the disclosure provides a nozzle, a processing method of a semiconductor substrate and substrate processing equipment, which can reduce sputtering of the processing liquid when the processing liquid is discharged to the substrate, improve the uniformity of wet etching or cleaning of the surface of the substrate, and improve the production efficiency and yield of the substrate.

In a first aspect, the present disclosure provides a nozzle for discharging a processing liquid to a substrate placed on a stage while the stage drives the substrate to rotate along a central axis of the stage; the nozzle includes:

the support main body is in an inverted circular truncated cone shape; the support body has a first end face and a second end face; the central axis of the first end face and the central axis of the second end face are coincident with the central axis of the bearing table, the diameter of the first end face is larger than that of the second end face, and the distance between the first end face and the bearing table is larger than that between the second end face and the bearing table;

a slim nozzle group including a plurality of slim nozzles; the liquid inlet end of the thin pipe nozzle is arranged on the first end face, the liquid outlet end of the thin pipe nozzle is arranged on the second end face, and the liquid outlet direction when the liquid outlet end discharges the treatment liquid is provided with a direction vector consistent with the target rotation direction; the target rotation direction is a rotation direction of the substrate.

The nozzle is used for discharging the treatment liquid to the substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; comprising the following steps: the support main body is in an inverted circular truncated cone shape; the support body has a first end face and a second end face; the central axis of the first end face and the central axis of the second end face are coincident with the central axis of the bearing table, the diameter of the first end face is larger than that of the second end face, and the distance between the first end face and the bearing table is larger than that between the second end face and the bearing table; a slim nozzle group including a plurality of slim nozzles; the liquid inlet end of the thin pipe nozzle is arranged on the first end face, the liquid outlet end of the thin pipe nozzle is arranged on the second end face, and the liquid outlet direction when the liquid outlet end discharges the treatment liquid is provided with a direction vector consistent with the target rotation direction; the target rotation direction is a rotation direction of the substrate. When the processing liquid is discharged to the substrate, the nozzle discharges the processing liquid through the plurality of thin pipe nozzles included in the thin pipe nozzle group, and the liquid outlet direction when the processing liquid is discharged is along the target rotation direction, and the target rotation direction is the rotation direction of the substrate, so that the sputtering of the processing liquid is reduced, a water film covering the substrate can be gently formed on the substrate, the dispersed spraying can be performed through the plurality of liquid outlet ends along the liquid outlet direction along the rotation direction of the substrate, the water film uniformly covering the substrate can be formed on the substrate when the processing liquid is discharged through the plurality of liquid outlet ends, the substrate is subjected to efficient wet etching or cleaning, the wet etching or cleaning efficiency and uniformity of the substrate can be improved, and the production efficiency and the yield of the substrate are improved.

In an alternative embodiment, the liquid outlet ends of the plurality of thin tube nozzles are uniformly distributed around the central axis of the second end face, and the liquid inlet ends of the plurality of thin tube nozzles are uniformly distributed around the central axis of the first end face.

Above-mentioned nozzle, a plurality of tubule nozzles go out the liquid end round the axis of second terminal surface evenly distributed, just a plurality of tubule nozzles the feed liquor end round the axis of first terminal surface evenly distributed. The liquid outlet ends of the plurality of thin tube nozzles of the nozzle are uniformly distributed around the axis of the second end face, the liquid inlet ends of the plurality of thin tube nozzles are uniformly distributed around the axis of the first end face, the treatment liquid can be more uniformly discharged to the substrate, the sputtering of the treatment liquid is further reduced, the uniformity of wet etching or cleaning of the substrate is more effectively improved, and the production efficiency and the yield of the substrate are improved.

In an alternative embodiment, the diameter of the second end face is 50% to 80% of the diameter of the first end face.

In an alternative embodiment, the height of the support body is 1.5 to 2.5 times the diameter of the second end face.

In an alternative embodiment, the diameter of the first end face is 2-4 cm.

In an alternative embodiment, the diameter of the second end face is 1.6-3.2 cm.

In an alternative embodiment, the fine tube nozzle group includes 2 to 8 fine tube nozzles.

In an alternative embodiment, the thin tube nozzle is a straight tube with uniform thickness.

The nozzle is characterized in that the thin pipe nozzle is a straight pipe with uniform thickness, and is beneficial to smoothly discharging the treatment liquid in the thin pipe nozzle from the liquid outlet end, so that the treatment liquid is efficiently discharged to the substrate, the sputtering of the treatment liquid can be reduced, and the production efficiency and the yield of the substrate are improved.

In an alternative embodiment, the liquid outlet end is inscribed with the second end surface and has an inscribed point, and the projection of the thin tube nozzle on the plane of the second end surface is parallel to the tangential direction of the second end surface at the inscribed point.

The liquid outlet end of the thin pipe nozzle is internally tangent with the circular second end surface and is provided with an internally tangent point; the projection of the thin pipe nozzle on the plane where the second end face is located is parallel to the tangential direction of the second end face at the inscription point, so that the liquid outlet direction of the thin pipe nozzle is along the rotation direction of the substrate, more sufficient liquid outlet components can be provided along the tangential line of the rotation direction of the substrate, the thin pipe nozzles are uniformly distributed, the substrate can be subjected to more sufficient wet etching or cleaning by discharging the treatment liquid to the substrate, the sputtering of the treatment liquid is further reduced, the uniformity of the wet etching or cleaning of the substrate is improved, and the production efficiency and the yield of the substrate are improved. In another embodiment, the liquid inlet end of the thin tube nozzle is inscribed with the circular first end surface, so that the space of the nozzle can be utilized to the maximum extent, and the inclination angle of the thin tube nozzle is easier to control.

In an alternative embodiment, the diameter of the slim tube nozzle is 0.2 to 0.6cm.

In an alternative embodiment, a first included angle is formed between the axis of any of the slim tube nozzles and a facet on which the second end surface is located.

And the included angle between the axis of any thin pipe nozzle and the plane where the second end face is positioned is a first included angle. The included angle between the axis of any thin pipe nozzle and the plane where the second end face is located is the same, so that the treatment liquid can be more uniformly discharged to the substrate, the sputtering of the treatment liquid is effectively reduced, the uniformity of wet etching or cleaning of the surface of the substrate is improved, and the production efficiency and the yield of the substrate are further improved.

In an alternative embodiment, the first included angle is 68 ° to 88 °.

In a second aspect, the present disclosure provides a method of processing a semiconductor substrate, the method comprising:

selecting a nozzle according to the target rotating speed of the semiconductor substrate; the nozzle is used for discharging the treatment liquid to the substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the nozzle includes: the support main body is in an inverted circular truncated cone shape; the support body has a first end face and a second end face; the central axis of the first end face and the central axis of the second end face are coincident with the central axis of the bearing table, the diameter of the first end face is larger than that of the second end face, and the distance between the first end face and the bearing table is larger than that between the second end face and the bearing table; a slim nozzle group including a plurality of slim nozzles; the liquid inlet end of the thin pipe nozzle is arranged on the first end face, the liquid outlet end of the thin pipe nozzle is arranged on the second end face, and the liquid outlet direction when the liquid outlet end discharges the treatment liquid is provided with a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate; in the nozzles, a first included angle corresponding to the target rotating speed is formed between the axis of any thin pipe nozzle and a small circular plane where the second end face is positioned;

And discharging the treatment liquid to the semiconductor substrate arranged on the bearing table through the nozzle, wherein the bearing table drives the semiconductor substrate to rotate along the central axis of the bearing table at the target rotating speed.

In an alternative embodiment, the selecting the nozzle according to the target rotation speed of the semiconductor substrate includes:

if the target rotating speed is greater than 2000 revolutions per minute, selecting a nozzle with the first included angle of 80 degrees;

if the target rotating speed is between 1000 and 2000 revolutions per minute, selecting a nozzle with the first included angle of 83 degrees;

and if the target rotating speed is less than 1000 revolutions per minute, selecting the nozzle with the first included angle of 85 degrees.

Through the cooperation of the first included angle of the nozzle and the rotating speed of the substrate, the sputtering phenomenon is controlled when the substrate rotates, the sputtering of the treatment liquid is effectively reduced, the wet etching or cleaning uniformity of the surface of the substrate is improved, and the production efficiency and the yield of the substrate are further improved.

In a third aspect, the present disclosure provides a substrate processing apparatus comprising a nozzle, a frame, and a susceptor disposed on the frame;

the bearing table is provided with a bearing surface for placing a substrate; the bearing table drives the substrate to rotate along the central axis of the bearing table; the central axis of the bearing table is perpendicular to the bearing surface, the central axis of the bearing table coincides with the central axis of the substrate, and the substrate rotates around the central axis of the substrate;

The nozzle is used for discharging the treatment liquid to the substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the nozzle includes:

a slim nozzle group including a plurality of slim nozzles; the liquid inlet end of the thin pipe nozzle is arranged on the first end face, the liquid outlet end of the thin pipe nozzle is arranged on the second end face, and the liquid outlet direction when the liquid outlet end discharges the treatment liquid is provided with a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate;

the second end face is parallel to the bearing surface, and the central axis of the second end face coincides with the central axis of the bearing table.

In an alternative embodiment, the diameter of the first end face is 2-4 cm.

In an alternative embodiment, the included angle between the axis of any of the slim tube nozzles and the plane where the second end surface is located is a preset first included angle.

In an alternative embodiment, the first included angle is 68 ° to 88 °.

In an alternative embodiment, the substrate processing apparatus further includes:

the control valves are arranged on the thin pipe nozzles and correspond to the thin pipe nozzles one by one;

and a control unit for opening or closing part or all of the control valves in response to a control command to change the number of the fine tube nozzles participating in discharging the treatment liquid in the fine tube nozzle group.

The above substrate processing apparatus further comprises: the control valves are arranged on the thin pipe nozzles and correspond to the thin pipe nozzles one by one; and a control unit for opening or closing part or all of the control valves in response to a control command to change the number of the fine tube nozzles participating in discharging the treatment liquid in the fine tube nozzle group. The substrate processing equipment can adjust the number of the thin pipe nozzles, flexibly adjust the spraying force, effectively reduce the sputtering of the processing liquid, improve the uniformity of wet etching or cleaning of the surface of the substrate, and further improve the production efficiency and the yield of the substrate.

The technical effects caused by any implementation manner of the second aspect to the third aspect may be referred to the technical effects caused by the implementation manner of the first aspect, and are not described herein.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.

FIG. 1 is a schematic diagram of a related art nozzle spraying a processing liquid onto a wafer;

FIG. 2 is a schematic top view of a nozzle structure provided in an embodiment of the present disclosure;

FIG. 3 is a schematic front view of the structure of the nozzle of FIG. 2 in an embodiment of the present disclosure;

FIG. 4 is a schematic top view of a configuration of a nozzle with a target rotational direction of counterclockwise direction provided by an embodiment of the present disclosure;

fig. 5 is a schematic top view of the structure of one nozzle including 6 slim nozzles provided in an embodiment of the present disclosure;

fig. 6 is a schematic structural view of a substrate processing apparatus according to an embodiment of the present disclosure.

Detailed Description

For the purposes of clarity, technical solutions and advantages of the present application, the following description will be given in further detail with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.

In the presently disclosed embodiments, the word "exemplary" is used in a sense of "serving as an example, embodiment, or illustration. Any embodiment described as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.

The terms "first," "second," and the like herein are used for descriptive purposes only and are not to be construed as either explicit or implicit relative importance or to indicate the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature, and in the description of embodiments of the disclosure, unless otherwise indicated, the meaning of "a plurality" is two or more.

Some of the terms in the embodiments of the present disclosure are explained below to facilitate understanding by those skilled in the art.

Fig. 1 is a schematic diagram of a related art nozzle spraying a processing liquid onto a wafer. The wafer 20 in fig. 1 is placed on a carrier surface, and the wafer 20 rotates about a central axis 21 of the wafer 20. As shown in fig. 1, when the wafer 20 is wet etched or cleaned by the singlechip stage, when the nozzle 10 sprays the processing liquid 11 onto the surface of the wafer 20, the processing liquid 11 always splashes under the action of the rotation of the wafer 20 along the rotation direction rot.1, as shown by the splashed processing liquid 13 in fig. 1, the splashed processing liquid 13 falls onto the nozzle 10 or the chamber side wall 31 of the chamber 30 and then drops onto the wafer 20 after the processing is completed, thereby adversely affecting the reaction uniformity or cleanliness of the surface of the wafer 20, reducing the wet etching or cleaning efficiency of the wafer 20 and reducing the yield of the wafer 20.

The present disclosure provides a nozzle, a method of processing a semiconductor substrate, and a substrate processing apparatus, which solve the problem that sputtering of a processing liquid is likely to occur when the processing liquid is discharged to a substrate in a manufacturing process of a semiconductor device in the related art, resulting in lower wet etching or cleaning efficiency and yield of the substrate. The nozzle is used for discharging the treatment liquid to the substrate arranged on the bearing surface, and the substrate rotates around the central axis of the substrate; comprising the following steps: the support main body is in a cone shape; the support body has a first end face and a second end face; the first end face and the second end face are coaxial, and the diameter of the first end face is larger than that of the second end face; a slim nozzle group including a plurality of slim nozzles; the liquid inlet end of the thin pipe nozzle is arranged on the first end face, the liquid outlet end of the thin pipe nozzle is arranged on the second end face, and the liquid outlet direction of the thin pipe nozzle when the liquid outlet end discharges the treatment liquid is along the target rotation direction; the target rotation direction is a rotation direction of the substrate; the plurality of fine tube nozzles form a water film in the substrate to cover a central region of the substrate when the processing liquid is discharged. When the processing liquid is discharged to the substrate, the nozzle discharges the processing liquid through the plurality of thin pipe nozzles included in the thin pipe nozzle group, and the liquid outlet direction when the processing liquid is discharged is along the target rotation direction, and the target rotation direction is the rotation direction of the substrate, so that the sputtering of the processing liquid is reduced, a water film covering the substrate can be gently formed on the substrate, the dispersed spraying can be performed through the plurality of liquid outlet ends along the liquid outlet direction along the rotation direction of the substrate, the water film uniformly covering the substrate can be formed on the substrate when the processing liquid is discharged through the plurality of liquid outlet ends, the substrate is subjected to efficient wet etching or cleaning, the wet etching or cleaning efficiency and uniformity of the substrate can be improved, and the production efficiency and the yield of the substrate are improved.

In order to further explain the technical solution provided by the embodiments of the present disclosure, the nozzle provided by the embodiments of the present disclosure is further described below. The substrate in the embodiment of the present application may be the wafer shown in fig. 1.

Fig. 2 shows a simplified top view of a nozzle structure provided by an embodiment of the present disclosure. A nozzle 100 for discharging a processing liquid to a substrate placed on a susceptor while the susceptor drives the substrate to rotate along a central axis of the susceptor; as shown in fig. 2, the nozzle 100 includes:

a support body 101, wherein the support body 101 is in an inverted truncated cone shape; the support body 101 has a first end face 1011 and a second end face 1012; the central axes of the first end face 1011 and the second end face 1012 are coincident with the central axis of the bearing table, the diameter D1 of the first end face is larger than the diameter D2 of the second end face, and the distance between the first end face 1011 and the bearing table is larger than the distance between the second end face 1012 and the bearing table;

a slim nozzle group 102, the slim nozzle group 102 including a plurality of slim nozzles 1021; the liquid inlet end 10211 of the tubule nozzle 1021 is on the first end surface 1011, the liquid outlet end 10212 of the tubule nozzle 1021 is on the second end surface 1012, and the liquid outlet direction when the liquid outlet end 10212 discharges the processing liquid has a direction vector consistent with the target rotation direction rot.st1; the target rotation direction rot.st1 is the rotation direction of the substrate.

In some embodiments, the plurality of tubule nozzles 1021 may form a water film within the substrate that covers a central region of the substrate when discharging the processing liquid. The central region of the substrate is the region at the central axis of the substrate.

In order to more clearly illustrate the structure of the nozzle 100 shown in fig. 1, fig. 3 shows a brief front view of the nozzle 100 shown in fig. 2. As shown in fig. 3, the nozzle 100 includes: the support body 101, the support body 101 is cone; the support body 101 has a first end face 1011 and a second end face 1012; the first end face 1011 and the second end face 1012 are coaxial, the central axis of the first end face 1011 and the central axis of the second end face 1012 are coincident with the central axis of the bearing platform, and the diameter D1 of the first end face is larger than the diameter D2 of the second end face; a tubule nozzle group 102 comprising a plurality of tubule nozzles 1021; the liquid inlet end 10211 of the tubule nozzle 1021 is on the first end surface 1011, the liquid outlet end 10212 of the tubule nozzle 1021 is on the second end surface 1012, and the liquid outlet direction when the liquid outlet end 10212 discharges the processing liquid follows the target rotation direction rot.st1, therefore, the liquid outlet direction when the liquid outlet end 10212 discharges the processing liquid has a direction vector which is consistent with the target rotation direction rot.st1; the target rotation direction rot.st1 is the rotation direction of the substrate.

It will be appreciated that the liquid outlet direction of the liquid outlet 10212 when discharging the processing liquid has a direction vector directed perpendicularly to the substrate in addition to the above-described direction vector coincident with the target rotation direction rot.st1. The direction vector of the vertical pointing substrate is not described in detail in this disclosure.

The nozzle 100 provided in this embodiment is configured to discharge a processing liquid to a substrate placed on a carrier, and the carrier drives the substrate to rotate along a central axis of the carrier; comprising the following steps: a support body 101, wherein the support body 101 is in an inverted truncated cone shape; the support body 101 has a first end face 1011 and a second end face 1012; the central axes of the first end face 1011 and the second end face 1012 are coincident with the central axis of the bearing platform, and the diameter D1 of the first end face is larger than the diameter D2 of the second end face; a slim nozzle group 102, the slim nozzle group 102 including a plurality of slim nozzles 1021; the liquid inlet end 10211 of the tubule nozzle 1021 is on the first end surface 1011, the liquid outlet end 10212 of the tubule nozzle 1021 is on the second end surface 1012, and the liquid outlet direction when the liquid outlet end 10212 discharges the processing liquid has a direction vector consistent with the target rotation direction rot.st1; the target rotation direction rot.st1 is the rotation direction of the substrate. When the processing liquid is discharged to the substrate, the nozzle discharges the processing liquid through the plurality of thin pipe nozzles included in the thin pipe nozzle group, and the liquid outlet direction when the processing liquid is discharged is along the target rotation direction, and the target rotation direction is the rotation direction of the substrate, so that the sputtering of the processing liquid is reduced, a water film covering the substrate can be gently formed on the substrate, the dispersed spraying can be performed through the plurality of liquid outlet ends along the liquid outlet direction along the rotation direction of the substrate, the water film uniformly covering the substrate can be formed on the substrate when the processing liquid is discharged through the plurality of liquid outlet ends, the substrate is subjected to efficient wet etching or cleaning, the wet etching or cleaning efficiency and uniformity of the substrate can be improved, and the production efficiency and the yield of the substrate are improved.

In embodiments of the present disclosure, the substrate may be a wafer. The target rotation direction rot.st1 of the substrate shown in fig. 2 is clockwise. It should be noted that in other embodiments of the present application, the rotation direction of the substrate may be counterclockwise. As shown in fig. 4, if the direction of rotation rot.st2 of the substrate is opposite to the direction of the target direction of rotation rot.st1 shown in fig. 2, the direction of the plurality of tubule nozzles 1021' included in the group of tubule nozzles 102' in the nozzle 100' is also different from the direction of the plurality of tubule nozzles 1021 in fig. 2 so as to keep the liquid outlet direction along the direction of rotation of the substrate when the liquid outlet end discharges the processing liquid.

In an alternative embodiment, the liquid outlet ends of the plurality of thin tube nozzles are uniformly distributed around the central axis of the second end surface, and the liquid inlet ends of the plurality of thin tube nozzles are uniformly distributed around the central axis of the first end surface.

Illustratively, the tubule nozzle group 102 in the nozzle 100 shown in fig. 2 includes 2 tubule nozzles 1021, the liquid outlet ends of the 2 tubule nozzles 1021 are evenly distributed about the central axis of the second end face 1012, and the liquid inlet ends of the 2 tubule nozzles 1021 are evenly distributed about the central axis of the first end face 1011.

It is to be understood that although the tubule nozzle group 102 shown in fig. 2 includes 2 tubule nozzles 1021, the number of tubule nozzles included in the tubule nozzle group in the embodiments of the present application is not limited to 2, but may be more.

In one possible implementation, the diameter of the second end face is 50% -80% of the diameter of the first end face.

Illustratively, the nozzle 100 shown in FIG. 2 has a diameter D2 of the second end surface that is 50%, 60%, 70%, or 80% of the diameter D1 of the first end surface.

In an alternative embodiment, the first end face has a diameter of 2 to 4cm.

Illustratively, referring to FIG. 2, the diameter D1 of the first end face is 2-4 cm, e.g., the diameter D1 of the first end face may be 2, 3, 4cm.

Illustratively, referring to FIG. 2, the diameter D2 of the second end face may have a value in the range of 1.6-3.2 cm, e.g., D2 of the second end face diameter may be 1.8cm, 2cm, 2.2cm, 2.5cm, 2.8cm, 3cm.

The height of the supporting body is the distance between the first end face and the second end face in the supporting body.

Illustratively, the height H of the support body shown in fig. 2 is 1.5 to 2.5 times the diameter D2 of the second end face, for example, the height H of the support body may be 2 times the diameter D2 of the second end face.

In one possible implementation, the fine tube nozzle group includes 2 to 8 fine tube nozzles.

Illustratively, referring to fig. 5, in the nozzle 100", the tubule nozzle group 102 includes 6 tubule nozzles 1021. In other embodiments, the number of tubule nozzles 1021 is 2, 3, 4, or 8.

In an alternative embodiment, the slim tube nozzle is a straight tube of uniform thickness.

Illustratively, as shown in fig. 2, the slim tube nozzle 1021 in the nozzle 100 is a straight tube having uniform thickness.

In an alternative embodiment, the projection of the thin tube nozzle onto the large circular plane in which the first end face is located is inscribed with the target circle along the target rotation direction; the target circle is the projection of the second end face onto the large circle plane.

Illustratively, the projection of the tubule nozzle 1021 shown in fig. 2 onto the large circular plane in which the first end face 1011 lies, inscribes the target circle circle_tar along the target rotational direction rot.st1; the target circle circle_tar is the projection of the second end face 1012 onto the large circular plane.

In an alternative embodiment, the diameter of the tubule nozzle is 0.2 to 0.6cm.

Illustratively, the diameter d1 of the tubule nozzle 1021 shown in FIG. 2 is 0.2-0.6 cm, e.g., the diameter d1 may be 0.2cm, 0.3cm, 0.4cm, 0.5cm, 0.6cm.

In an alternative embodiment, the included angle between the axis of any thin tube nozzle and the small circular plane where the second end face is located is a preset first included angle.

Illustratively, in the nozzle 100 shown in fig. 3, the included angle between the axis of any of the tubule nozzles 1021 and the facet on which the second end face 1012 is located is a preset first included angle ang.

In an alternative embodiment, the first included angle is 68 ° to 88 °.

Illustratively, the first included angle ang is 68-88, e.g., the first included angle ang may have a value of 70 °, 75 °, 80 °, or 85 °.

In the embodiment of the application, changing the included angle between the axis of the thin tube nozzle and the small circular plane where the second end face is located, that is, changing the first included angle, can be achieved by changing the size of the diameter D1 of the first end face under the condition that the diameter D2 of the second end face is kept unchanged.

In the wet process of semiconductor manufacture, the larger the rotation speed is, the more obvious the splash phenomenon is caused, and the smaller the included angle nozzle is needed, so the nozzles with different included angles can be selected corresponding to different rotation speeds.

In an alternative embodiment, the first included angle is 80 °; the nozzle is used for discharging the treatment liquid to the substrate when the rotation speed of the substrate is more than 2000 rpm.

For example, in the supporting body of one nozzle, the diameter D2 of the second end face is 2.5cm, the distance H between the first end face and the second end face is 5cm, if the diameter D1 of the first end face is 3.3cm, the included angle between the axis of the tubule nozzle and the facet where the second end face is located may be 80 °, and at this time, the first included angle takes on a value of 80 °. When the rotation speed of the substrate is more than 2000 revolutions per minute, the nozzle with the first included angle of 80 degrees is adopted to discharge the treatment liquid to the substrate. That is, the nozzle is used to discharge the processing liquid to the substrate when the rotation speed of the substrate is 2000 rotations per minute or more.

In an alternative embodiment, the first included angle is 83 °; the nozzle is used for discharging the treatment liquid to the substrate when the rotation speed of the substrate is 1000-2000 rpm.

For example, in the supporting body of one nozzle, the diameter D2 of the second end face is 2.5cm, the distance H between the first end face and the second end face is 5cm, if the diameter D1 of the first end face is 3cm, the included angle between the axis of the tubule nozzle and the small circular plane where the second end face is located may be 83 °, and at this time, the first included angle takes a value of 83 °. When the rotation speed of the substrate is 1000-2000 rpm, the first nozzle with the included angle of 83 degrees is adopted to discharge the treatment liquid to the substrate. That is, the nozzle is used to discharge the processing liquid to the substrate when the rotation speed of the substrate is 1000 to 2000 rotations per minute.

In an alternative embodiment, the first included angle is 85 °; the nozzle is used for discharging the treatment liquid to the substrate when the rotation speed of the substrate is less than 1000 rotations per minute.

For example, in the supporting body of one nozzle, the diameter D2 of the second end face is 2.5cm, the distance H between the first end face and the second end face is 5cm, if the diameter D1 of the first end face is 2.8cm, the included angle between the axis of the tubule nozzle and the facet where the second end face is located may be 85 °, and at this time, the first included angle takes a value of 85 °. When the rotating speed of the substrate is less than 1000 revolutions per minute, the first nozzle with the included angle of 85 degrees is adopted to discharge the treatment liquid to the substrate. That is, the nozzle is used to discharge the processing liquid to the substrate when the rotation speed of the substrate is less than 1000 rotations per minute.

The use of 85 ° nozzles is recommended when the rotational speed is less than 1000 revolutions per minute; when the rotation speed is 1000-2000 rpm, it is recommended to use 83 ° nozzle; when the rotation speed is more than 2000 rpm, it is recommended to use 80 ° nozzles, and the above-mentioned selection of the nozzles according to the rotation speed can reduce the splashing phenomenon of the treatment liquid.

The nozzle provided in the above embodiment is used for discharging the processing liquid to the substrate placed on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; comprising the following steps: the support main body is in an inverted truncated cone shape; the support body has a first end face and a second end face; the central axis of the first end face and the central axis of the second end face are coincident with the central axis of the bearing table, the diameter of the first end face is larger than that of the second end face, and the distance between the first end face and the bearing table is larger than that between the second end face and the bearing table; a slim nozzle group including a plurality of slim nozzles; the liquid inlet end of the thin pipe nozzle is arranged on the first end face, the liquid outlet end of the thin pipe nozzle is arranged on the second end face, and the liquid outlet direction when the liquid outlet end discharges the treatment liquid is provided with a direction vector consistent with the target rotation direction; the target rotation direction is a rotation direction of the substrate. The nozzle can reduce the sputtering of the treatment fluid, promote the wet etching or cleaning of the surface of the substrate, improve the production efficiency of the substrate and promote the yield of the substrate.

Based on the same inventive concept as the nozzle shown in fig. 2, a method of processing a semiconductor substrate is also provided in the embodiments of the present disclosure. Since the method for processing the semiconductor substrate is a method corresponding to the nozzle of the present disclosure, and the principle of solving the problem by the method is similar to that of the nozzle, the implementation of the method can be referred to the implementation of the embodiment of the nozzle, and the repetition is omitted.

The embodiment of the disclosure also provides a method for processing a semiconductor substrate, which comprises the following steps:

and A1, selecting a nozzle according to the target rotating speed of the semiconductor substrate.

The nozzle is used for discharging the treatment liquid to the substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the nozzle comprises: the support main body is in an inverted truncated cone shape; the support body has a first end face and a second end face; the central axis of the first end face and the central axis of the second end face are coincident with the central axis of the bearing table, the diameter of the first end face is larger than that of the second end face, and the distance between the first end face and the bearing table is larger than that between the second end face and the bearing table; a slim nozzle group including a plurality of slim nozzles; the liquid inlet end of the thin pipe nozzle is arranged on the first end face, the liquid outlet end of the thin pipe nozzle is arranged on the second end face, and the liquid outlet direction when the liquid outlet end discharges the treatment liquid is provided with a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate; in the nozzles, a first included angle corresponding to the target rotating speed is formed between the axis of any thin pipe nozzle and the small circular plane where the second end face is located.

In an alternative embodiment, selecting a nozzle based on a target rotational speed of a semiconductor substrate includes: if the target rotating speed is greater than 2000 revolutions per minute, selecting a nozzle with a first included angle of 80 degrees; if the target rotating speed is between 1000 and 2000 revolutions per minute, selecting a nozzle with a first included angle of 83 degrees; if the target rotation speed is less than 1000 revolutions per minute, a nozzle with a first included angle of 85 degrees is selected.

And A2, discharging the treatment liquid to the semiconductor substrate arranged on the bearing table through the nozzle, and driving the semiconductor substrate to rotate along the central axis of the bearing table at a target rotating speed by the bearing table.

Based on the same inventive concept as the nozzle shown in fig. 2, a substrate processing apparatus is also provided in an embodiment of the present disclosure. Since the substrate processing apparatus is an apparatus corresponding to the nozzle of the present disclosure, and the principle of the apparatus for solving the problem is similar to that of the nozzle, the implementation of the apparatus may refer to the implementation of the embodiment of the nozzle described above, and the repetition is omitted.

Fig. 6 illustrates a schematic structure of a substrate processing apparatus provided in an embodiment of the present disclosure, and as illustrated in fig. 6, the substrate processing apparatus includes a nozzle 600, a frame 601, and a susceptor 602 disposed on the frame 601;

The bearing table 602 has a bearing surface for placing the substrate 603, the bearing table 602 drives the substrate 603 to rotate along a central axis 6021 of the bearing table 602, the central axis 6021 is perpendicular to the bearing surface, the central axis 6021 of the bearing table 602 coincides with a central axis 6031 of the substrate 603, and the substrate 603 rotates around the central axis 6031;

a nozzle 600 for discharging a processing liquid to a substrate 603 placed on a stage 602, the stage 602 driving the substrate 603 to rotate along a central axis 6021 of the stage 602; the nozzle 600 includes:

the supporting main body is in an inverted truncated cone shape; the support body has a first end face and a second end face; the central axis of the first end face and the central axis of the second end face are coincident with the central axis of the bearing table, the diameter of the first end face is larger than that of the second end face, and the distance between the first end face and the bearing table is larger than that between the second end face and the bearing table;

the second end face is parallel to the bearing surface, and the central axis of the second end face coincides with the central axis 6021 of the bearing platform 602.

In an alternative embodiment, the first end face has a diameter of 2 to 4cm.

In an alternative embodiment, the tubule nozzle group comprises 2 to 8 tubule nozzles.

In an alternative embodiment, the first included angle is 68 ° to 88 °.

and a control unit for opening or closing part or all of the control valves in response to the control command to change the number of the fine tube nozzles participating in discharging the treatment liquid in the fine tube nozzle group.

In specific implementation, the nozzle set of the embodiment of the present application includes a plurality of tubule nozzles, for example, 6 tubule nozzles, and each tubule nozzle has a diameter of 0.4cm. If the number of nozzles is reduced to 6, for example, 6, or the diameter of each nozzle is reduced from 0.4cm, for example, 0.25cm, a larger impact force can be obtained.

The substrate processing apparatus of this embodiment further includes: the control valves are arranged on the thin pipe nozzles and correspond to the thin pipe nozzles one by one; and a control unit for opening or closing part or all of the control valves in response to the control command to change the number of the fine tube nozzles participating in discharging the treatment liquid in the fine tube nozzle group. The substrate processing equipment can adjust the number of the thin pipe nozzles, flexibly adjust the spraying force, effectively reduce the sputtering of the processing liquid, improve the uniformity of wet etching or cleaning of the surface of the substrate, and further improve the production efficiency and the yield of the substrate.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.

Claims

1. The nozzle is characterized by being used for discharging treatment liquid to a substrate arranged on a bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the nozzle includes:

a slim nozzle group including a plurality of slim nozzles; the liquid inlet end of the thin pipe nozzle is arranged on the first end face, the liquid outlet end of the thin pipe nozzle is arranged on the second end face, and the liquid outlet direction when the liquid outlet end discharges the treatment liquid is provided with a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate; the plurality of thin pipe nozzles are used for forming a water film covering the central area of the substrate in the substrate when the treatment liquid is discharged; the thin pipe nozzle is a straight pipe with uniform thickness; the liquid outlet end is internally tangent to the second end surface and is provided with an internally tangent point, and the projection of the thin pipe nozzle on the plane where the second end surface is located is parallel to the tangential direction of the second end surface at the internally tangent point.

2. The nozzle of claim 1, wherein the liquid outlet ends of the plurality of tubule nozzles are evenly distributed about the central axis of the second end face, and the liquid inlet ends of the plurality of tubule nozzles are evenly distributed about the central axis of the first end face.

3. The nozzle of claim 1, wherein the diameter of the second end face is 50% -80% of the diameter of the first end face.

4. The nozzle of claim 1, wherein the height of the support body is 1.5-2.5 times the diameter of the second end face.

5. The nozzle of claim 1, wherein the first end face has a diameter of 2-2%

4cm。

6. The nozzle of claim 1, wherein the diameter of the second end face is 1.6-3.2 cm.

7. The nozzle of claim 1, wherein the fine tube nozzle group comprises 2 to 8 fine tube nozzles.

8. The nozzle of claim 1, wherein the diameter of the slim tube nozzle is 0.2-0.6 cm.

9. The nozzle of claim 1, wherein the axis of any of the tubule nozzles has a first angle with respect to the plane of the substrate.

10. The nozzle of claim 9, wherein the first included angle is in the range of 68 ° to 88 °.

11. A method of processing a semiconductor substrate, the method comprising:

selecting a nozzle according to the target rotating speed of the semiconductor substrate; the nozzle is used for discharging the treatment liquid to the substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the nozzle includes: the support main body is in an inverted circular truncated cone shape; the support body has a first end face and a second end face; the central axis of the first end face and the central axis of the second end face are coincident with the central axis of the bearing table, the diameter of the first end face is larger than that of the second end face, and the distance between the first end face and the bearing table is larger than that between the second end face and the bearing table; a slim nozzle group including a plurality of slim nozzles; the liquid inlet end of the thin pipe nozzle is arranged on the first end face, the liquid outlet end of the thin pipe nozzle is arranged on the second end face, and the liquid outlet direction when the liquid outlet end discharges the treatment liquid is provided with a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate; the plurality of thin pipe nozzles are used for forming a water film covering the central area of the substrate in the substrate when the treatment liquid is discharged; the thin pipe nozzle is a straight pipe with uniform thickness; the liquid outlet end is internally tangent to the second end surface and is provided with an internally tangent point, and the projection of the thin pipe nozzle on the plane of the second end surface is parallel to the tangential direction of the second end surface at the internally tangent point; in the nozzles, a first included angle corresponding to the target rotating speed is formed between the axis of any thin pipe nozzle and a small circular plane where the second end face is positioned;

12. The method of claim 11, wherein selecting the nozzle based on the target rotational speed of the semiconductor substrate comprises:

if the target rotating speed is 1000-2000 revolutions per minute, selecting a nozzle with the first included angle of 83 degrees;

and if the target rotating speed is smaller than 1000 revolutions per minute, selecting the nozzle with the first included angle of 85 degrees.

13. A substrate processing apparatus, comprising:

a frame body;

the bearing table is arranged on the frame body and is provided with a bearing surface for placing a substrate; the bearing table drives the substrate to rotate along the central axis of the bearing table; the central axis of the bearing table is perpendicular to the bearing surface, the central axis of the bearing table coincides with the central axis of the substrate, and the substrate rotates around the central axis of the substrate;

The nozzle according to any one of claims 1 to 10, wherein the second end face is parallel to the bearing surface, and a central axis of the second end face coincides with a central axis of the bearing table.

14. The substrate processing apparatus according to claim 13, further comprising: