CN115025896A - Nozzle, semiconductor substrate processing method and substrate processing equipment - Google Patents

Nozzle, semiconductor substrate processing method and substrate processing equipment Download PDF

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Publication number
CN115025896A
CN115025896A CN202210618308.7A CN202210618308A CN115025896A CN 115025896 A CN115025896 A CN 115025896A CN 202210618308 A CN202210618308 A CN 202210618308A CN 115025896 A CN115025896 A CN 115025896A
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CN
China
Prior art keywords
nozzle
substrate
face
central axis
end surface
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Granted
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CN202210618308.7A
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Chinese (zh)
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CN115025896B (en
Inventor
梅晓波
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to CN202210618308.7A priority Critical patent/CN115025896B/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B05B1/16—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening having selectively- effective outlets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/26—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with means for mechanically breaking-up or deflecting the jet after discharge, e.g. with fixed deflectors; Breaking-up the discharged liquid or other fluent material by impinging jets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The present disclosure provides a nozzle, a method of processing a semiconductor substrate, and a substrate processing apparatus. The nozzle is used for discharging treatment liquid to a substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the method comprises the following steps: the supporting body is in an inverted frustum shape; the support body has a first end face and a second end face; the central axis of the first end surface and the central axis of the second end surface are superposed with the central axis of the bearing platform, the diameter of the first end surface is larger than that of the second end surface, and the distance between the first end surface and the bearing platform is larger than that between the second end surface and the bearing platform; the thin tube nozzle group comprises a plurality of thin tube nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid has a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate. The nozzle can improve the production efficiency and yield of the substrate.

Description

Nozzle, semiconductor substrate processing method and substrate processing equipment
Technical Field
The present disclosure relates to the field of integrated circuit manufacturing technologies, and in particular, to a nozzle, a method for processing a semiconductor substrate, and a substrate processing apparatus.
Background
Generally, in a wet semiconductor process, a semiconductor substrate (e.g., a wafer) is placed in a single wafer stage, a treating solution is sprayed on the wafer to chemically react with the surface of the wafer or remove particles attached to the surface of the wafer, and reaction byproducts or particles are flowed out of the wafer along with a waste solution, and the wet process is performed by wet etching or cleaning to improve the structure or cleanliness of the surface of the wafer.
At present, for most single chip machines, when a wafer is wet-etched or cleaned, when a nozzle sprays a treatment liquid to the surface of the wafer, the treatment liquid or waste liquid is splashed to the nozzle or the side wall of a chamber under the action of the rotating wafer and then drops onto the wafer after the process is completed, so that adverse effects are caused on the reaction uniformity or cleanliness of the surface of the wafer, the wet-etching or cleaning efficiency of the wafer is reduced, and the yield of the wafer is reduced.
Disclosure of Invention
The embodiment of the disclosure provides a nozzle, a method for processing a semiconductor substrate and a substrate processing device, which can reduce the sputtering of a processing liquid, improve the uniformity of wet etching or cleaning on the surface of the substrate and improve the production efficiency and yield of the substrate when the processing liquid is discharged to the substrate.
In a first aspect, the present disclosure provides a nozzle for discharging a treatment solution to a substrate placed on a susceptor, while the susceptor drives the substrate to rotate along a central axis of the susceptor; the nozzle includes:
a support body having an inverted frustum shape; the support body has a first end face and a second end face; the central axis of the first end surface and the central axis of the second end surface are superposed with the central axis of the bearing table, the diameter of the first end surface is larger than that of the second end surface, and the distance between the first end surface and the bearing table is larger than that between the second end surface and the bearing table;
a tubule nozzle set including a plurality of tubule nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid has a direction vector consistent with the target rotation direction; the target rotation direction is a rotation direction of the substrate.
The nozzle provided by the embodiment is used for discharging the treatment liquid to the substrate arranged on the bearing table, and meanwhile, the bearing table drives the substrate to rotate along the central axis of the bearing table; the method comprises the following steps: a support body having an inverted frustum shape; the support body has a first end face and a second end face; the central axis of the first end surface and the central axis of the second end surface are superposed with the central axis of the bearing table, the diameter of the first end surface is larger than that of the second end surface, and the distance between the first end surface and the bearing table is larger than that between the second end surface and the bearing table; a tubule nozzle set including a plurality of tubule nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid has a direction vector consistent with the target rotation direction; the target rotation direction is a rotation direction of the substrate. This nozzle, when discharging the treatment fluid to the base plate, discharge the treatment fluid through a plurality of tubule nozzles that tubule nozzle group includes, and play liquid direction when discharging the treatment fluid is along target direction of rotation, and target direction of rotation is the direction of rotation of base plate to reduce the sputter of treatment fluid, can gently form the cover on the base plate the water film of base plate can disperse the injection along the play liquid direction along the direction of rotation of base plate through a plurality of play liquid ends, and can form when a plurality of play liquid ends discharge the treatment fluid evenly cover the water film of base plate carries out efficient wet etching or washing to the base plate, can improve the wet etching or cleaning efficiency and the homogeneity of base plate, promotes the production efficiency and the yield of base plate.
In an optional implementation manner, the liquid outlet ends of the plurality of thin tube nozzles are uniformly distributed around the central axis of the second end surface, and the liquid inlet ends of the plurality of thin tube nozzles are uniformly distributed around the central axis of the first end surface.
The liquid outlet ends of the thin tube nozzles are uniformly distributed around the central axis of the second end surface, and the liquid inlet ends of the thin tube nozzles are uniformly distributed around the central axis of the first end surface. This nozzle a plurality of tubule nozzles go out the liquid end round the axis evenly distributed at the second terminal surface, just a plurality of tubule nozzles the feed liquor end round the axis evenly distributed of first terminal surface can discharge the treatment fluid to the base plate more evenly, further reduces the sputter of treatment fluid, more effectively promotes the wet etching or the abluent degree of consistency to the base plate, improves the production efficiency and the yield of base plate.
In an alternative embodiment, the diameter of the second end face is 50% to 80% of the diameter of the first end face.
In an alternative embodiment, the height of the support body is 1.5 to 2.5 times the diameter of the second end face.
In an alternative embodiment, the diameter of the first end face is 2-4 cm.
In an alternative embodiment, the diameter of the second end face is 1.6-3.2 cm.
In an optional embodiment, the number of the tubule nozzles included in the tubule nozzle group is 2 to 8.
In an alternative embodiment, the thin tube nozzle is a straight tube with uniform thickness.
The nozzle is a straight pipe with uniform thickness, and is beneficial to smoothly discharging the treatment liquid in the nozzle from the liquid outlet end, so that the treatment liquid is efficiently discharged to the substrate, the sputtering of the treatment liquid can be reduced, and the production efficiency and the yield of the substrate are improved.
In an optional implementation manner, the liquid outlet end is internally tangent to the second end face and has an internally tangent point, and a projection of the tubule nozzle on a plane where the second end face is located is parallel to a tangential direction of the second end face at the internally tangent point.
In the nozzle, the liquid outlet end of the thin tube nozzle is internally tangent to the circular second end surface and is provided with an internally tangent intersection point; the tubule nozzle is in projection on the plane of second terminal surface place with the second terminal surface is in the tangential direction of interior contact point parallels for the play liquid direction of this tubule nozzle is along the direction of rotation of base plate, and can provide more sufficient play liquid component along the tangential of the direction of rotation of base plate, makes each tubule nozzle distribute evenly, can carry out more abundant wet corrosion or washing to the base plate through discharging the treatment fluid to the base plate, further reduces the sputter of treatment fluid, promotes the wet corrosion or abluent degree of consistency to the base plate, improves the production efficiency and the yield of base plate. In another embodiment, the liquid inlet end of the capillary nozzle is internally tangent to the circular first end surface, so that the space of the nozzle can be utilized to the maximum extent, and the inclination angle of the capillary nozzle can be controlled more easily.
In an alternative embodiment, the diameter of the thin tube nozzle is 0.2-0.6 cm.
In an alternative embodiment, a first included angle is formed between the axis of any thin tube nozzle and the small circular plane where the second end face is located.
In the nozzle, the included angle between the axis of the thin tube nozzle and the plane where the second end face is located is a first included angle. The included angle between the axis of any thin tube nozzle and the plane where the second end face is located is the same, treatment liquid can be uniformly discharged to the substrate, sputtering of the treatment liquid is effectively reduced, the wet etching or cleaning uniformity of the surface of the substrate is improved, and the production efficiency and yield of the substrate are further improved.
In an alternative embodiment, the first included angle is 68 ° to 88 °.
In a second aspect, the present disclosure provides a method of processing a semiconductor substrate, the method comprising:
selecting a nozzle according to the target rotating speed of the semiconductor substrate; the nozzle is used for discharging treatment liquid to a substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the nozzle includes: a support body having an inverted frustum shape; the support body has a first end face and a second end face; the central axis of the first end surface and the central axis of the second end surface are superposed with the central axis of the bearing table, the diameter of the first end surface is larger than that of the second end surface, and the distance between the first end surface and the bearing table is larger than that between the second end surface and the bearing table; a tubule nozzle set including a plurality of tubule nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid has a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate; in the nozzle, a first included angle corresponding to the target rotating speed is formed between the axis of any thin tube nozzle and a small circular plane where the second end face is located;
and discharging treatment liquid to the semiconductor substrate arranged on the bearing platform through the nozzle, wherein the bearing platform drives the semiconductor substrate to rotate at the target rotating speed along the central axis of the bearing platform.
In an alternative embodiment, the selecting the nozzle according to the target rotation speed of the semiconductor substrate includes:
if the target rotating speed is greater than 2000 revolutions per minute, selecting the nozzle with the first included angle of 80 degrees;
if the target rotating speed is between 1000 and 2000 revolutions per minute, selecting the nozzle with the first included angle of 83 degrees;
and if the target rotating speed is less than 1000 revolutions per minute, selecting the nozzle with the first included angle of 85 degrees.
Through the cooperation of the first included angle of the nozzle and the rotating speed of the substrate, the phenomenon of splashing when the substrate rotates is controlled, the splashing of the treatment liquid is effectively reduced, the wet etching or cleaning uniformity of the surface of the substrate is improved, and the production efficiency and the yield of the substrate are further improved.
In a third aspect, the present disclosure provides a substrate processing apparatus, including a nozzle, a frame, and a susceptor disposed on the frame;
the bearing table is provided with a bearing surface for placing a substrate; the bearing table drives the substrate to rotate along the central axis of the bearing table; the central axis of the bearing table is perpendicular to the bearing surface, the central axis of the bearing table is superposed with the central axis of the substrate, and the substrate rotates around the central axis of the substrate;
the nozzle is used for discharging treatment liquid to a substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the nozzle includes:
a support body in the shape of an inverted frustum; the support body has a first end face and a second end face; the central axis of the first end surface and the central axis of the second end surface are coincided with the central axis of the bearing table, the diameter of the first end surface is larger than that of the second end surface, and the distance between the first end surface and the bearing table is larger than that between the second end surface and the bearing table;
a tubule nozzle set including a plurality of tubule nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid has a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate;
the second end face is parallel to the bearing face, and the central axis of the second end face is superposed with the central axis of the bearing table.
In an optional embodiment, the liquid outlet ends of the thin tube nozzles are uniformly distributed around the central axis of the second end surface, and the liquid inlet ends of the thin tube nozzles are uniformly distributed around the central axis of the first end surface.
In an alternative embodiment, the diameter of the second end face is 50% to 80% of the diameter of the first end face.
In an alternative embodiment, the height of the support body is 1.5 to 2.5 times the diameter of the second end face.
In an alternative embodiment, the diameter of the first end face is 2-4 cm.
In an alternative embodiment, the diameter of the second end face is 1.6-3.2 cm.
In an optional embodiment, the number of the tubule nozzles included in the tubule nozzle group is 2 to 8.
In an alternative embodiment, the fine tube nozzle is a straight tube of uniform thickness.
In an optional implementation manner, the liquid outlet end is internally tangent to the second end face and has an internally tangent point, and a projection of the tubule nozzle on a plane where the second end face is located is parallel to a tangential direction of the second end face at the internally tangent point.
In an alternative embodiment, the diameter of the thin tube nozzle is 0.2-0.6 cm.
In an optional embodiment, an included angle between the axis of any one of the tubule nozzles and the plane where the second end face is located is a preset first included angle.
In an alternative embodiment, the first included angle is 68 ° to 88 °.
In an alternative embodiment, the substrate processing apparatus further includes:
the control valves are arranged on the thin tube nozzles and correspond to the thin tube nozzles one to one;
a control unit for opening or closing part or all of the control valves in response to a control command to change the number of the slim tube nozzles in the slim tube nozzle group involved in discharging a treatment liquid.
The substrate processing apparatus described above, further comprising: the control valves are arranged on the thin tube nozzles and correspond to the thin tube nozzles one to one; a control unit for opening or closing part or all of the control valves in response to a control command to change the number of the slim tube nozzles in the slim tube nozzle group involved in discharging a treatment liquid. The substrate processing equipment can adjust the number of the thin tube nozzles, flexibly adjust the spraying force, effectively reduce the sputtering of the processing liquid, improve the wet etching or cleaning uniformity of the substrate surface, and further improve the production efficiency and yield of the substrate.
The technical effects brought by any one implementation manner of the second aspect to the third aspect may be referred to the technical effects brought by the implementation manner of the first aspect, and are not described herein again.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a schematic view illustrating a related art nozzle spraying a processing solution onto a wafer;
FIG. 2 is a schematic top view of a nozzle configuration provided by an embodiment of the present disclosure;
FIG. 3 is a schematic front view of the structure of the nozzle of FIG. 2 in an embodiment of the disclosure;
FIG. 4 is a schematic top view of a nozzle structure provided by an embodiment of the present disclosure, wherein the target rotation direction is counterclockwise;
FIG. 5 is a schematic top view of a nozzle structure including 6 slim-line nozzles provided in an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of a substrate processing apparatus according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application clearer, the present application will be described in further detail with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the disclosed embodiments, the word "exemplary" is used to mean "serving as an example, embodiment, or illustration. Any embodiment described as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.
The terms "first" and "second" are used herein for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature, and in the description of embodiments of the disclosure, unless stated otherwise, "plurality" means two or more.
Some terms in the embodiments of the present disclosure are explained below to facilitate understanding by those skilled in the art.
Generally, in a wet semiconductor process, a semiconductor substrate (e.g., a wafer) is placed in a single wafer stage, a treating solution is sprayed on the wafer to chemically react with the surface of the wafer or remove particles attached to the surface of the wafer, and reaction byproducts or particles are flowed out of the wafer along with a waste solution, and the wet process is performed by wet etching or cleaning to improve the structure or cleanliness of the surface of the wafer.
At present, for most single chip machines, when a wafer is wet-etched or cleaned, when a nozzle sprays a treatment liquid to the surface of the wafer, the treatment liquid or waste liquid is splashed to the nozzle or the side wall of a chamber under the action of the rotating wafer and then drops onto the wafer after the process is completed, so that adverse effects are caused on the reaction uniformity or cleanliness of the surface of the wafer, the wet-etching or cleaning efficiency of the wafer is reduced, and the yield of the wafer is reduced.
Fig. 1 is a schematic view illustrating a nozzle spraying a processing solution to a wafer according to a related art. The wafer 20 of fig. 1 is placed on the carrier surface, and the wafer 20 rotates around a central axis 21 of the wafer 20. As shown in fig. 1, when the single chip microcomputer platform wets or cleans the wafer 20, when the nozzle 10 sprays the processing liquid 11 onto the surface of the wafer 20, the processing liquid 11 is often splashed under the action of the rotation of the wafer 20 along the rotation direction rot.1, and as shown by the splashed processing liquid 13 in fig. 1, the splashed processing liquid 13 falls onto the nozzle 10 or the chamber sidewall 31 of the chamber 30 and then drops onto the wafer 20 after the process is completed, so that the reaction uniformity or cleanliness of the surface of the wafer 20 is adversely affected, the wet etching or cleaning efficiency of the wafer 20 is reduced, and the yield of the wafer 20 is reduced.
The present disclosure provides a nozzle, a method for processing a semiconductor substrate, and a substrate processing apparatus, which solve the problem that in the manufacturing process of a semiconductor device in the related art, sputtering of a processing liquid is likely to occur when the processing liquid is discharged to a substrate, resulting in low wet etching or cleaning efficiency and yield of the substrate. The nozzle is used for discharging treatment liquid to the substrate on the bearing surface, and the substrate rotates around the central axis of the substrate; the method comprises the following steps: the supporting main body is in a cone shape; the support body has a first end face and a second end face; the first end surface and the second end surface are coaxial, and the diameter of the first end surface is larger than that of the second end surface; the thin tube nozzle group comprises a plurality of thin tube nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid is along the target rotation direction; the target rotation direction is a rotation direction of the substrate; the plurality of thin tube nozzles are used for forming a water film covering the central area of the substrate in the substrate when the processing liquid is discharged. This nozzle, when discharging the treatment fluid to the base plate, discharge the treatment fluid through a plurality of tubule nozzles that tubule nozzle group includes, and play liquid direction when discharging the treatment fluid is along target direction of rotation, and target direction of rotation is the direction of rotation of base plate to reduce the sputter of treatment fluid, can gently form the cover on the base plate the water film of base plate can disperse the injection along the play liquid direction along the direction of rotation of base plate through a plurality of play liquid ends, and can form when a plurality of play liquid ends discharge the treatment fluid evenly cover the water film of base plate carries out efficient wet etching or washing to the base plate, can improve the wet etching or cleaning efficiency and the homogeneity of base plate, promotes the production efficiency and the yield of base plate.
In order to further explain the technical solutions provided by the embodiments of the present disclosure, the nozzles provided by the embodiments of the present disclosure are further explained below. The substrate in the embodiment of the present application may be a wafer shown in fig. 1.
Fig. 2 illustrates a schematic top view of a structure of a nozzle provided by an embodiment of the present disclosure. A nozzle 100 for discharging a treatment solution to the substrate placed on the susceptor, and simultaneously the susceptor drives the substrate to rotate along a central axis of the susceptor; as shown in fig. 2, the nozzle 100 includes:
a support body 101, the support body 101 being in the shape of an inverted circular truncated cone; the support body 101 has a first end face 1011 and a second end face 1012; the central axis of the first end surface 1011 and the central axis of the second end surface 1012 are both superposed with the central axis of the bearing platform, the diameter D1 of the first end surface is larger than the diameter D2 of the second end surface, and the distance between the first end surface 1011 and the bearing platform is larger than the distance between the second end surface 1012 and the bearing platform;
a tubule nozzle set 102, the tubule nozzle set 102 including a plurality of tubule nozzles 1021; a liquid inlet end 10211 of the thin tube nozzle 1021 is arranged on the first end surface 1011, a liquid outlet end 10212 of the thin tube nozzle 1021 is arranged on the second end surface 1012, and a liquid outlet direction when the liquid outlet end 10212 discharges the treatment liquid has a direction vector consistent with a target rotation direction rot.St1; st1 is the rotation direction of the substrate.
In some embodiments, the plurality of tubule nozzles 1021 may form a water film covering a central region of the substrate within the substrate when discharging the processing liquid. The central region of the base plate is the region at the central axis of the base plate.
To more clearly illustrate the structure of the nozzle 100 shown in fig. 1, fig. 3 shows a schematic front view of the nozzle 100 shown in fig. 2. As shown in fig. 3, the nozzle 100 includes: a supporting body 101, the supporting body 101 being in the shape of a cone; the support body 101 has a first end face 1011 and a second end face 1012; the first end surface 1011 is coaxial with the second end surface 1012, the central axis of the first end surface 1011 and the central axis of the second end surface 1012 are superposed with the central axis of the bearing platform, and the diameter D1 of the first end surface is larger than the diameter D2 of the second end surface; a tubule nozzle set 102 comprising a plurality of tubule nozzles 1021; a liquid inlet end 10211 of the thin tube nozzle 1021 is arranged on the first end surface 1011, a liquid outlet end 10212 of the thin tube nozzle 1021 is arranged on the second end surface 1012, and a liquid outlet direction when the liquid outlet end 10212 discharges the treatment liquid is along the target rotation direction rot.St1, so that the liquid outlet direction when the liquid outlet end 10212 discharges the treatment liquid has a direction vector consistent with the target rotation direction rot.St1; st1 is the rotation direction of the substrate.
It is understood that the liquid discharge direction of the liquid discharge end 10212 for discharging the processing liquid has a direction vector directed perpendicularly to the substrate, in addition to the above-mentioned direction vector corresponding to the target rotation direction rot.st 1. This disclosure does not describe the direction vector pointing perpendicularly to the substrate in any detail.
The nozzle 100 provided in this embodiment is configured to discharge the treatment solution to the substrate placed on the susceptor, and the susceptor drives the substrate to rotate along a central axis of the susceptor; the method comprises the following steps: a support body 101, the support body 101 being in an inverted frustum shape; the support body 101 has a first end face 1011 and a second end face 1012; the central axis of the first end surface 1011 and the central axis of the second end surface 1012 are superposed with the central axis of the bearing platform, and the diameter D1 of the first end surface is larger than the diameter D2 of the second end surface; a tubule nozzle set 102, the tubule nozzle set 102 including a plurality of tubule nozzles 1021; a liquid inlet end 10211 of the thin tube nozzle 1021 is arranged on the first end surface 1011, a liquid outlet end 10212 of the thin tube nozzle 1021 is arranged on the second end surface 1012, and a liquid outlet direction when the liquid outlet end 10212 discharges the treatment liquid has a direction vector consistent with a target rotation direction rot.St1; st1 is the rotation direction of the substrate. This nozzle, when discharging the treatment fluid to the base plate, discharge the treatment fluid through a plurality of tubule nozzles that tubule nozzle group includes, and play liquid direction when discharging the treatment fluid is along target direction of rotation, and target direction of rotation is the direction of rotation of base plate to reduce the sputter of treatment fluid, can gently form the cover on the base plate the water film of base plate can disperse the injection along the play liquid direction along the direction of rotation of base plate through a plurality of play liquid ends, and can form when a plurality of play liquid ends discharge the treatment fluid evenly cover the water film of base plate carries out efficient wet etching or washing to the base plate, can improve the wet etching or cleaning efficiency and the homogeneity of base plate, promotes the production efficiency and the yield of base plate.
In an embodiment of the present disclosure, the substrate may be a wafer. The target rotation direction rot.st1 of the substrate shown in fig. 2 is clockwise. It should be noted that, in other embodiments of the present application, the rotation direction of the substrate may be counterclockwise. As shown in fig. 4, when the rotation direction rot.st2 of the substrate is opposite to the target rotation direction rot.st1 shown in fig. 2, the direction of the plurality of thin tube nozzles 1021 ' included in the thin tube nozzle group 102 ' in the nozzle 100 ' is also different from the direction of the plurality of thin tube nozzles 1021 in fig. 2, so that the liquid discharge direction when the treatment liquid is discharged from the liquid discharge end is kept along the rotation direction of the substrate.
In an alternative embodiment, the liquid outlet ends of the plurality of tubule nozzles are evenly distributed around the central axis of the second end surface, and the liquid inlet ends of the plurality of tubule nozzles are evenly distributed around the central axis of the first end surface.
Exemplarily, the thin tube nozzle set 102 in the nozzle 100 shown in fig. 2 includes 2 thin tube nozzles 1021, liquid outlet ends of the 2 thin tube nozzles 1021 are uniformly distributed around a central axis of the second end surface 1012, and liquid inlet ends of the 2 thin tube nozzles 1021 are uniformly distributed around a central axis of the first end surface 1011.
It is to be understood that, although the tubule nozzle group 102 illustrated in fig. 2 includes 2 tubule nozzles 1021, the number of tubule nozzles included in the tubule nozzle group in the embodiment of the present application is not limited to 2, but may be more.
In one possible implementation, the diameter of the second end face is 50% to 80% of the diameter of the first end face.
Illustratively, in the nozzle 100 shown in FIG. 2, the diameter D2 of the second end face is 50%, 60%, 70%, or 80% of the diameter D1 of the first end face.
In an alternative embodiment, the first end face has a diameter of 2-4 cm.
Illustratively, referring to FIG. 2, the diameter D1 of the first end surface is 2-4 cm, for example, the diameter D1 of the first end surface may be 2, 3, 4 cm.
In an alternative embodiment, the diameter of the second end face is 1.6-3.2 cm.
Illustratively, referring to fig. 2, the diameter D2 of the second end surface ranges from 1.6 to 3.2cm, for example, the diameter D2 of the second end surface may be 1.8cm, 2cm, 2.2cm, 2.5cm, 2.8cm, or 3 cm.
In an alternative embodiment, the height of the support body is 1.5 to 2.5 times the diameter of the second end face.
The height of the support body is the distance between the first end face and the second end face in the support body.
Illustratively, the height H of the support body shown in FIG. 2 is 1.5-2.5 times the diameter D2 of the second end face, for example, the height H of the support body may be 2 times the diameter D2 of the second end face.
In a possible implementation manner, the number of the thin tube nozzles included in the thin tube nozzle group is 2-8.
Illustratively, referring to fig. 5, in the nozzle 100 ″, the tubule nozzle group 102 includes 6 tubule nozzles 1021. In other embodiments, the number of tubule nozzles 1021 is 2, 3, 4, or 8.
In an alternative embodiment, the fine tube nozzle is a straight tube of uniform thickness.
Illustratively, as shown in fig. 2, the thin tube nozzle 1021 in the nozzle 100 is a straight tube of uniform thickness.
In an alternative embodiment, the projection of the tubule nozzle on the large circle plane where the first end face is located is inscribed with the target circle along the target rotation direction; the target circle is a projection of the second end surface on the large circular plane.
Exemplarily, a projection of the tubule nozzle 1021 shown in fig. 2 on a large circular plane where the first end surface 1011 is located is inscribed with the target circle Circl _ Tar along the target rotation direction rot.st 1; the target circle Circl Tar is the projection of the second end surface 1012 onto the large circular plane.
In an alternative embodiment, the diameter of the thin tube nozzle is 0.2-0.6 cm.
Illustratively, the diameter d1 of the tubule nozzle 1021 shown in FIG. 2 is 0.2-0.6 cm, for example, the diameter d1 may be 0.2cm, 0.3cm, 0.4cm, 0.5cm, 0.6 cm.
In an optional embodiment, an included angle between the axis of any thin tube nozzle and the small circular plane where the second end face is located is a preset first included angle.
For example, in the nozzle 100 shown in fig. 3, an included angle between the axis of any thin tube nozzle 1021 and the small circular plane where the second end surface 1012 is located is a preset first included angle ang.
In an alternative embodiment, the first included angle is 68 ° to 88 °.
Illustratively, the first included angle ang is 68 ° to 88 °, for example, the first included angle ang may have a value of 70 °, 75 °, 80 °, or 85 °.
In the embodiment of this application, change the contained angle between the axis of tubule nozzle and the small circle plane at second terminal surface place, change first contained angle promptly, can pass through under the condition that the diameter D2 at the second terminal surface keeps unchangeable, realize through the mode that changes the size of the diameter D1 of first terminal surface.
In the semiconductor manufacturing process wet process, the higher the rotating speed is, the more obvious the splashing phenomenon is caused, and the nozzles with small included angles are more needed, so that the nozzles with different included angles can be selected corresponding to different rotating speeds.
In an alternative embodiment, the first included angle is 80 °; the nozzle is used for discharging the processing liquid to the substrate when the rotating speed of the substrate is more than 2000 revolutions per minute.
For example, in the support body of one nozzle, the diameter D2 of the second end surface is 2.5cm, the distance H between the first end surface and the second end surface is 5cm, and if the diameter D1 of the first end surface is 3.3cm, the included angle between the axis of the thin tube nozzle and the small circular plane where the second end surface is located may be 80 °, and the first included angle is 80 °. When the rotation speed of the substrate is more than 2000 revolutions per minute, the processing liquid is discharged to the substrate by adopting the nozzle with the first included angle of 80 degrees. That is, the nozzle is used to discharge the processing liquid to the substrate when the rotation speed of the substrate is 2000 rpm or more.
In an alternative embodiment, the first included angle is 83 °; the nozzle is used for discharging the treatment liquid to the substrate when the rotating speed of the substrate is 1000-2000 revolutions per minute.
For example, in the support body of one nozzle, the diameter D2 of the second end surface is 2.5cm, the distance H between the first end surface and the second end surface is 5cm, and if the diameter D1 of the first end surface is 3cm, the included angle between the axis of the capillary nozzle and the small circular plane where the second end surface is located may be 83 °, and the first included angle is 83 °. When the rotation speed of the substrate is 1000-2000 revolutions per minute, the nozzle with the first included angle of 83 degrees is adopted to discharge the treatment liquid to the substrate. That is, the nozzle is used for discharging the treating liquid to the substrate when the rotating speed of the substrate is 1000-2000 revolutions per minute.
In an alternative embodiment, the first included angle is 85 °; the nozzle is used for discharging the processing liquid to the substrate when the rotating speed of the substrate is less than 1000 revolutions per minute.
For example, in the support body of one nozzle, the diameter D2 of the second end surface is 2.5cm, the distance H between the first end surface and the second end surface is 5cm, and if the diameter D1 of the first end surface is 2.8cm, the included angle between the axis of the tubule nozzle and the small circular plane where the second end surface is located may be 85 °, and the first included angle is 85 °. When the rotating speed of the substrate is less than 1000 revolutions per minute, the processing liquid is discharged to the substrate by adopting the nozzle with the first included angle of 85 degrees. That is, the nozzle is used to discharge the processing liquid to the substrate when the rotation speed of the substrate is less than 1000 revolutions per minute.
When the rotating speed is less than 1000 revolutions per minute, 85 DEG nozzles are recommended; when the rotating speed is 1000-2000 revolutions per minute, a nozzle with an angle of 83 degrees is recommended; when the rotating speed is more than 2000 revolutions per minute, the nozzle with the angle of 80 degrees is recommended, and the spraying phenomenon of the processing liquid can be reduced by selecting the nozzle according to the rotating speed.
The nozzle provided by the embodiment is used for discharging the treatment liquid to the substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the method comprises the following steps: the supporting body is in an inverted frustum shape; the support body has a first end face and a second end face; the central axis of the first end surface and the central axis of the second end surface are superposed with the central axis of the bearing platform, the diameter of the first end surface is larger than that of the second end surface, and the distance between the first end surface and the bearing platform is larger than that between the second end surface and the bearing platform; the thin tube nozzle group comprises a plurality of thin tube nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid has a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate. The nozzle can reduce the sputtering of the treatment liquid, promote the wet corrosion or cleaning of the surface of the substrate, improve the production efficiency of the substrate and improve the yield of the substrate.
Based on the same inventive concept as the nozzle shown in fig. 2, the embodiment of the present disclosure also provides a method for processing a semiconductor substrate. Since the processing method of the semiconductor substrate is a method corresponding to the nozzle of the present disclosure, and the principle of the method for solving the problem is similar to that of the nozzle, the implementation of the method can refer to the implementation of the embodiment of the nozzle, and repeated details are not repeated.
The embodiment of the disclosure also provides a processing method of a semiconductor substrate, which includes the following steps:
in step A1, a nozzle is selected based on a target rotational speed of the semiconductor substrate.
The nozzle is used for discharging treatment liquid to the substrate arranged on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the nozzle includes: the supporting body is in an inverted frustum shape; the support body has a first end face and a second end face; the central axis of the first end surface and the central axis of the second end surface are superposed with the central axis of the bearing platform, the diameter of the first end surface is larger than that of the second end surface, and the distance between the first end surface and the bearing platform is larger than that between the second end surface and the bearing platform; the thin tube nozzle group comprises a plurality of thin tube nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid has a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate; in the nozzle, a first included angle corresponding to the target rotating speed is formed between the axis of any thin tube nozzle and the small circular plane where the second end face is located.
In an alternative embodiment, selecting the nozzle based on a target rotational speed of the semiconductor substrate includes: if the target rotating speed is greater than 2000 revolutions per minute, selecting a nozzle with a first included angle of 80 degrees; if the target rotating speed is between 1000 and 2000 revolutions per minute, selecting a nozzle with a first included angle of 83 degrees; and if the target rotating speed is less than 1000 revolutions per minute, selecting a nozzle with a first included angle of 85 degrees.
Step a2, discharging the treating liquid to the semiconductor substrate placed on the susceptor through the nozzle, the susceptor driving the semiconductor substrate to rotate along the central axis of the susceptor at a target rotation speed.
Based on the same inventive concept as the nozzle shown in fig. 2, the embodiment of the present disclosure also provides a substrate processing apparatus. Since the substrate processing apparatus is an apparatus corresponding to the nozzle of the present disclosure, and the principle of solving the problem of the apparatus is similar to that of the nozzle, the implementation of the apparatus can refer to the implementation of the embodiment of the nozzle, and repeated descriptions are omitted.
Fig. 6 is a schematic structural view illustrating a substrate processing apparatus according to an embodiment of the present disclosure, and as shown in fig. 6, the substrate processing apparatus includes a nozzle 600, a frame 601, and a susceptor 602 disposed on the frame 601;
the bearing table 602 has a bearing surface for placing the substrate 603, the bearing table 602 drives the substrate 603 to rotate along a central axis 6021 of the bearing table 602, the central axis 6021 is perpendicular to the bearing surface, the central axis 6021 of the bearing table 602 is coincident with a central axis 6031 of the substrate 603, and the substrate 603 rotates around the central axis 6031;
a nozzle 600 for discharging a processing liquid to the substrate 603 placed on the susceptor 602, the susceptor 602 driving the substrate 603 to rotate along a central axis 6021 of the susceptor 602; the nozzle 600 includes:
the support body is in an inverted frustum shape; the support body has a first end face and a second end face; the central axis of the first end surface and the central axis of the second end surface are superposed with the central axis of the bearing platform, the diameter of the first end surface is greater than that of the second end surface, and the distance between the first end surface and the bearing platform is greater than that between the second end surface and the bearing platform;
the thin tube nozzle group comprises a plurality of thin tube nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid has a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate;
the second end surface is parallel to the bearing surface, and the central axis of the second end surface coincides with the central axis 6021 of the bearing table 602.
In an alternative embodiment, the liquid outlet ends of the plurality of thin tube nozzles are uniformly distributed around the central axis of the second end surface, and the liquid inlet ends of the plurality of thin tube nozzles are uniformly distributed around the central axis of the first end surface.
In an alternative embodiment, the diameter of the second end surface is 50% to 80% of the diameter of the first end surface.
In an alternative embodiment, the height of the support body is 1.5 to 2.5 times the diameter of the second end face.
In an alternative embodiment, the diameter of the first end face is 2-4 cm.
In an alternative embodiment, the diameter of the second end face is 1.6-3.2 cm.
In an alternative embodiment, the thin tube nozzle group comprises 2-8 thin tube nozzles.
In an alternative embodiment, the fine tube nozzle is a straight tube of uniform thickness.
In an alternative embodiment, the projection of the tubule nozzle on the large circle plane where the first end face is located is inscribed with the target circle along the target rotation direction; the target circle is a projection of the second end surface on the large circular plane.
In an alternative embodiment, the diameter of the thin tube nozzle is 0.2-0.6 cm.
In an alternative embodiment, the included angle between the axis of any thin tube nozzle and the small circular plane where the second end face is located is a preset first included angle.
In an alternative embodiment, the first included angle is 68 ° to 88 °.
In an alternative embodiment, the substrate processing apparatus further comprises:
the control valves are arranged on the thin tube nozzles and correspond to the thin tube nozzles one to one;
and the control unit is used for responding to the control command to open or close part or all of the control valves so as to change the number of the thin tube nozzles in the thin tube nozzle group for discharging the treatment liquid.
In specific implementation, the nozzle of the embodiment of the present application, the tubule nozzle set includes a plurality of tubule nozzles, for example, 6 tubule nozzles, and each tubule nozzle has a diameter of 0.4 cm. When the number of the narrow tube nozzles is reduced to 6, for example, 6, or the diameter of each narrow tube nozzle is reduced from 0.4cm, for example, adjusted to 0.25cm, a larger jetting force can be obtained.
The substrate processing apparatus of this embodiment, further comprising: the control valves are arranged on the thin tube nozzles and correspond to the thin tube nozzles one to one; and the control unit is used for responding to the control command to open or close part or all of the control valves so as to change the number of the thin tube nozzles in the thin tube nozzle group, which are involved in discharging the treatment liquid. The substrate processing equipment can adjust the number of the thin tube nozzles, flexibly adjust the spraying force, effectively reduce the sputtering of the processing liquid, improve the wet etching or cleaning uniformity of the surface of the substrate, and further improve the production efficiency and yield of the substrate.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present application without departing from the spirit and scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations as well.

Claims (16)

1. A nozzle is characterized in that the nozzle is used for discharging treatment liquid to a substrate placed on a bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the nozzle includes:
a support body having an inverted frustum shape; the support body has a first end face and a second end face; the central axis of the first end surface and the central axis of the second end surface are superposed with the central axis of the bearing table, the diameter of the first end surface is larger than that of the second end surface, and the distance between the first end surface and the bearing table is larger than that between the second end surface and the bearing table;
a tubule nozzle set including a plurality of tubule nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid has a direction vector consistent with the target rotation direction; the target rotation direction is a rotation direction of the substrate.
2. The nozzle of claim 1, wherein the liquid outlet ends of the plurality of tubule nozzles are evenly distributed about the central axis of the second end face, and the liquid inlet ends of the plurality of tubule nozzles are evenly distributed about the central axis of the first end face.
3. The nozzle of claim 1, wherein the diameter of the second end face is 50% to 80% of the diameter of the first end face.
4. The nozzle of claim 1, wherein the height of the support body is 1.5 to 2.5 times the diameter of the second end face.
5. The nozzle of claim 1, wherein the first end surface has a diameter of 2-4 cm.
6. The nozzle of claim 1, wherein the second end face has a diameter of 1.6 to 3.2 cm.
7. The nozzle according to claim 1, wherein the thin tube nozzle group comprises 2-8 thin tube nozzles.
8. The nozzle according to claim 1, wherein the thin tube nozzle is a straight tube having a uniform thickness.
9. The nozzle of claim 8, wherein the liquid outlet end is internally tangent to the second end face and has an internally tangent point, and a projection of the tubule nozzle on a plane where the second end face is located is parallel to a tangential direction of the second end face at the internally tangent point.
10. The nozzle of claim 8, wherein the slim tube nozzle has a diameter of 0.2 to 0.6 cm.
11. The nozzle of claim 8, wherein the axis of any of the capillary nozzles is at a first angle to the plane of the substrate.
12. The nozzle of claim 11 wherein said first included angle is in the range of 68 ° to 88 °.
13. A method of processing a semiconductor substrate, the method comprising:
selecting a nozzle according to the target rotating speed of the semiconductor substrate; the nozzle is used for discharging treatment liquid to a substrate placed on the bearing table, and the bearing table drives the substrate to rotate along the central axis of the bearing table; the nozzle includes: a support body having an inverted frustum shape; the support body has a first end face and a second end face; the central axis of the first end surface and the central axis of the second end surface are coincided with the central axis of the bearing table, the diameter of the first end surface is larger than that of the second end surface, and the distance between the first end surface and the bearing table is larger than that between the second end surface and the bearing table; a tubule nozzle set including a plurality of tubule nozzles; the liquid inlet end of the thin tube nozzle is arranged on the first end face, the liquid outlet end of the thin tube nozzle is arranged on the second end face, and the liquid outlet direction of the thin tube nozzle when the liquid outlet end discharges the treatment liquid has a direction vector consistent with the target rotation direction; the target rotation direction is the rotation direction of the substrate; in the nozzle, a first included angle corresponding to the target rotating speed is formed between the axis of any thin tube nozzle and a small circular plane where the second end face is located;
and discharging treatment liquid to the semiconductor substrate arranged on the bearing platform through the nozzle, wherein the bearing platform drives the semiconductor substrate to rotate at the target rotating speed along the central axis of the bearing platform.
14. The method of claim 13, wherein selecting the nozzle based on a target rotational speed of the semiconductor substrate comprises:
if the target rotating speed is greater than 2000 revolutions per minute, selecting a nozzle with the first included angle of 80 degrees;
if the target rotating speed is between 1000 and 2000 revolutions per minute, selecting the nozzle with the first included angle of 83 degrees;
and if the target rotating speed is less than 1000 revolutions per minute, selecting the nozzle with the first included angle of 85 degrees.
15. A substrate processing apparatus, comprising:
a frame body;
the bearing table is arranged on the frame body and is provided with a bearing surface for placing a substrate; the bearing table drives the substrate to rotate along the central axis of the bearing table; the central axis of the bearing table is perpendicular to the bearing surface, the central axis of the bearing table is superposed with the central axis of the substrate, and the substrate rotates around the central axis of the substrate;
the nozzle of any one of claims 1 to 12, wherein the second end face is parallel to the bearing surface and a central axis of the second end face coincides with a central axis of the bearing table.
16. The substrate processing apparatus of claim 15, further comprising:
the control valves are arranged on the thin tube nozzles and correspond to the thin tube nozzles one to one;
a control unit for opening or closing part or all of the control valves in response to a control command to change the number of the slim tube nozzles in the slim tube nozzle group involved in discharging a treatment liquid.
CN202210618308.7A 2022-06-01 2022-06-01 Nozzle, semiconductor substrate processing method and substrate processing equipment Active CN115025896B (en)

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