JP2017041555A - Substrate processing device and nozzle cleaning method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To clean a nozzle and an enclosure member attached to the nozzle.SOLUTION: A substrate processing device according to an embodiment includes a nozzle, an enclosure member, a moving mechanism, and a cleaning part. The nozzle discharges a process liquid to the substrate. The enclosure member is attached to the nozzle so as to enclose a tip portion of the nozzle. The moving mechanism moves the nozzle and the enclosure member. The cleaning part cleans the nozzle and the enclosure member, which are moved by the moving mechanism, with a cleaning fluid.SELECTED DRAWING: Figure 2A

Description

  The disclosed embodiment relates to a substrate processing apparatus and a nozzle cleaning method.

  2. Description of the Related Art Conventionally, a substrate processing apparatus that performs substrate processing such as cleaning processing by supplying a processing liquid to a substrate such as a semiconductor wafer or a glass substrate is known.

  Such a substrate processing apparatus includes a nozzle that discharges a processing liquid toward the substrate. Note that an enclosure member surrounding the nozzle may be provided around the nozzle in order to prevent the discharged processing liquid from being scattered.

  For example, Patent Document 1 discloses a semiconductor substrate cleaning apparatus in which a conical umbrella-shaped cover is attached as an enclosure member.

  In addition, the substrate processing apparatus may be provided with a nozzle cleaning mechanism for cleaning the nozzle itself in order to prevent the substrate from being contaminated by the processing liquid remaining on the nozzle itself (see, for example, Patent Document 2).

JP 2000-188273 A JP 2007-258462 A

  However, the above-described conventional technology has room for further improvement in that the nozzle and the enclosure member attached to the nozzle are cleaned. For example, the apparatus disclosed in Patent Document 1 includes a nozzle to which an enclosure member is attached, but does not include a nozzle cleaning mechanism that cleans the nozzle.

  Further, for example, the nozzle cleaning mechanism disclosed in Patent Document 2 cleans the nozzle by spraying a cleaning liquid on the nozzle. However, when this method is adopted, there is a problem that cleaning unevenness is likely to occur in the nozzle. . Moreover, this nozzle cleaning mechanism cleans the nozzle without an enclosure member, and does not wash the nozzle to which the enclosure member is attached.

  An object of one embodiment is to provide a substrate processing apparatus and a nozzle cleaning method capable of cleaning a nozzle and an enclosure member attached to the nozzle.

  A substrate processing apparatus according to an aspect of an embodiment includes a nozzle, a surrounding member, a moving mechanism, and a cleaning unit. The nozzle discharges the processing liquid toward the substrate. The enclosing member is attached to the nozzle so as to enclose the tip of the nozzle. The moving mechanism moves the nozzle and the enclosure member. The cleaning unit cleans the nozzle and the enclosure member moved by the moving mechanism with the cleaning liquid.

  According to one aspect of the embodiment, the nozzle and the enclosure member attached to the nozzle can be cleaned.

FIG. 1 is a diagram illustrating a schematic configuration of a substrate processing system according to an embodiment. FIG. 2A is a schematic plan view showing the configuration of the processing unit. FIG. 2B is a schematic cross-sectional view taken along line A-A ′ shown in FIG. 2A. FIG. 2C is a schematic perspective view illustrating the configuration of the nozzle cleaning unit. FIG. 2D is a schematic cross-sectional view illustrating the configuration of the nozzle cleaning unit. FIG. 2E is a schematic plan view illustrating the configuration of the nozzle cleaning unit. FIG. 3 is a flowchart illustrating a processing procedure of a nozzle cleaning process executed by the substrate processing system according to the embodiment. FIG. 4A is an explanatory diagram (part 1) of each process of the nozzle cleaning process. FIG. 4B is an explanatory diagram (No. 2) of each process of the nozzle cleaning process. FIG. 4C is an explanatory diagram (No. 3) of each process of the nozzle cleaning process. FIG. 4D is an explanatory diagram (part 4) of each process of the nozzle cleaning process. FIG. 4E is an explanatory diagram (No. 5) of each process of the nozzle cleaning process. FIG. 4F is a diagram illustrating a modified example of the nozzle drying process. FIG. 5A is a diagram (No. 1) illustrating a modified example of a nozzle. FIG. 5B is a diagram (No. 2) illustrating a modified example of the nozzle.

  Hereinafter, embodiments of a substrate processing apparatus and a nozzle cleaning method disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.

  FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.

  As shown in FIG. 1, the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.

  The carry-in / out station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of carriers C that accommodate a plurality of substrates, in this embodiment a semiconductor wafer (hereinafter referred to as a wafer W) in a horizontal state, are placed on the carrier placement unit 11.

  The transport unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transport device 13 and a delivery unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism. Do.

  The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transport unit 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on the transport unit 15.

  The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the processing unit 16 using a wafer holding mechanism. I do.

  The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17.

  Further, the substrate processing system 1 includes a control device 4. The control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.

  Such a program may be recorded on a computer-readable storage medium, and may be installed in the storage unit 19 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.

  The wafer W carried into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.

  Next, a schematic configuration of the processing unit 16 will be described with reference to FIGS. 2A and 2B. FIG. 2A is a schematic plan view showing the configuration of the processing unit 16. 2B is a schematic cross-sectional view taken along line A-A ′ shown in FIG. 2A.

  As shown in FIG. 2A, the processing unit 16 includes a substrate holding mechanism 22, a recovery cup 23, a nozzle head 24, a moving mechanism 25, and a nozzle cleaning unit 30 in a chamber 21.

  The substrate holding mechanism 22 holds the wafer W horizontally and rotates the held wafer W around the vertical axis. The recovery cup 23 is disposed so as to surround the substrate holding mechanism 22, and receives and recovers the processing liquid scattered outward of the wafer W due to the centrifugal force accompanying the rotation.

  The nozzle head 24 supplies a processing liquid from above the wafer W toward the wafer W. Specifically, the nozzle head 24 includes a nozzle 241 and a surrounding member 245 as shown in FIG. 2B. The nozzle 241 discharges the processing liquid supplied from the processing liquid supply source 244 to the processing liquid supply pipe 242 via the valve 243 toward the wafer W.

  The enclosing member 245 is formed in a hollow cone shape having an upper end portion and a lower end portion opened, for example, an umbrella shape as shown in FIG. 2B, and the nozzle 241 is provided inside the umbrella so as to surround the tip end portion of the nozzle 241. It is attached. Note that the surrounding member 245 plays a role of preventing scattering of the processing liquid discharged from the nozzle 241.

  A through hole 246 is formed in the vicinity of the upper end portion of the enclosing member 245. As will be described later, the through hole 246 allows the cleaning liquid to pass from the inside of the umbrella when the enclosure member 245 is immersed in the cleaning liquid, so that the enclosure member 245 is easily immersed.

  As shown in FIG. 2A, the moving mechanism 25 turns the nozzle head 24 in the horizontal direction (here, the XY plane direction) and moves it up and down in the vertical direction (here, the Z-axis direction).

  The nozzle cleaning unit 30 performs cleaning by immersing the nozzle head 24 in a cleaning liquid. As the cleaning liquid, HDIW (warm pure water) or the like can be used.

  Next, the configuration of the nozzle cleaning unit 30 will be described more specifically with reference to FIGS. 2C to 2E. FIG. 2C is a schematic perspective view illustrating the configuration of the nozzle cleaning unit 30. FIG. 2D is a schematic cross-sectional view illustrating the configuration of the nozzle cleaning unit 30. FIG. 2E is a schematic plan view showing the configuration of the nozzle cleaning unit 30.

  As shown in FIG. 2C, the nozzle cleaning unit 30 includes a cleaning tank 31. The cleaning tank 31 stores a cleaning liquid. The control unit 18 (see FIG. 1) uses the moving mechanism 25 described above to move the nozzle 241 and the enclosure member 245 into and out of the cleaning tank 31 (see arrow a0 in FIG. 2C).

  Specifically, as shown in FIG. 2D, the cleaning tank 31 is formed in a shape having an inclination angle corresponding to the shape of the nozzle 241 and the surrounding member 245. That is, the cleaning tank 31 has a first region 31 a having a shape that is recessed corresponding to the tip of the nozzle 241 at the center of the bottom surface.

  Moreover, the washing tank 31 has the 2nd area | region 31b of the shape formed so that it might become a downward gradient toward the outer peripheral part from the center part of the bottom face. The first region 31a immerses the nozzle 241 in the cleaning liquid. The second region 31b immerses the enclosure member 245 in the cleaning liquid.

  The nozzle cleaning unit 30 includes a first supply path 321 that supplies a cleaning liquid to the cleaning tank 31 and a second supply path 322. The first supply path 321 communicates with the first region 31a, and discharges the cleaning liquid supplied from the cleaning liquid supply source 324 via the valve 323 to the first region 31a.

  The second supply path 322 communicates with the second region 31b, and discharges the cleaning liquid supplied from the cleaning liquid supply source 324 via the valve 323 to the second region 31b. Although FIG. 2D shows an example in which the first supply path 321 and the second supply path 322 are branched from the same supply system of cleaning liquid, the cleaning liquid may be supplied from separate supply systems.

  Further, the nozzle cleaning unit 30 includes an overflow drain path 331. The overflow drain path 331 discharges the cleaning liquid exceeding the upper limit liquid level of the cleaning tank 31 from the cleaning tank 31.

  The nozzle cleaning unit 30 includes a first drain path 341 and a second drain path 342. A drain device 344 such as a vacuum pump is connected to the first drain path 341 and the second drain path 342 via a valve 343.

  The first drain path 341 communicates with the first region 31a and discharges the cleaning liquid stored in the cleaning tank 31 from the first region 31a. The second drain path 342 communicates with the second region 31b and discharges the cleaning liquid stored in the cleaning tank 31 from the second region 31b.

  The second drain path 342 is provided so that the cleaning liquid is discharged at a slower speed than the first drain path 341. Specifically, for example, the second drain path 342 may be structurally narrower than the first drain path 341, an intermediate tank may be provided in the middle of the second drain path 342, or the second drain A dedicated valve may be provided in the path 342 to control this.

  The nozzle cleaning unit 30 includes an inert gas supply path 351. The inert gas supply path 351 is provided above the overflow drain path 331, and discharges an inert gas such as N2 supplied from the inert gas supply source 353 via the valve 352 into the cleaning tank 31, The nozzle 241 and the surrounding member 245 are dried.

  Further, a plurality of discharge ports of the first supply path 321, the second supply path 322, and the inert gas supply path 351 described above can be arranged in the cleaning tank 31.

  Specifically, as shown in FIG. 2E, for example, a plurality of (three in this case) discharge ports of the first supply path 321 are arranged at equal intervals on the circumference of the same circle C1 around the first drain path 341. Are arranged so that the vortex is formed by the liquid flow of the discharged cleaning liquid.

  Similarly, for example, a plurality of (three in this case) discharge ports of the second supply path 322 are arranged at equal intervals on the circumference of the same circle C2 around the second region 31b (see FIG. 2D). The direction is provided so as to be a tangential direction of the same circle C2, and the vortex is formed by the flow of the discharged cleaning liquid.

  Accordingly, when the nozzle 241 and the surrounding member 245 are inserted into the cleaning tank 31 and immersed in the cleaning liquid, the nozzle 241 and the surrounding member 245 are cleaned with the swirling cleaning liquid (hereinafter referred to as “immersion tornado cleaning”). Therefore, the nozzle 241 and the enclosure member 245 can be reliably cleaned without uneven cleaning.

  Further, for example, a plurality of (three in this case) discharge ports of the inert gas supply path 351 are arranged at equal intervals around the outer periphery of the cleaning tank 31, and the central portion of the cleaning tank 31 where the discharge direction is positioned at the nozzle 241. It is provided to face.

  As a result, when the nozzle 241 and the enclosure member 245 are dried, the inert gas can be supplied uniformly and uniformly to the inside of the umbrella of the nozzle 241 and the enclosure member 245. The member 245 can be dried.

  Each of the discharge ports of the first supply path 321 may be provided not only on the circumference of the same circle C1 but also on different circumferences as long as a vortex is formed by the liquid flow of the discharged cleaning liquid. Good. Similarly, each of the discharge ports of the second supply path 322 may be provided not only on the circumference of the same circle C2 but also on different circumferences. Of course, the number of discharge ports of each of the first supply path 321, the second supply path 322, and the inert gas supply path 351 is not limited to three.

  On the other hand, as shown in FIG. 2E, the number of outlets of the second drain path 342 may be one, for example. In this case, it is preferable that the bottom surface of the second region 31 b of the cleaning tank 31 is inclined toward the discharge port of the single second drain path 342. Note that the second drain path 342 may not necessarily have one discharge port as long as the cleaning liquid can be discharged at a slower rate than the first drain path 341.

  Next, a specific operation in the nozzle cleaning unit 30 will be described with reference to FIGS. 3 and 4A to 4E. FIG. 3 is a flowchart showing the procedure of the nozzle cleaning process executed by the substrate processing system 1 according to this embodiment. 4A to 4E are explanatory diagrams (No. 1) to (No. 5) of each process of the nozzle cleaning process.

  First, the procedure of the nozzle cleaning process will be schematically described with reference to FIG. FIG. 3 shows a processing procedure from a state in which the control unit 18 controls the moving mechanism 25 to insert the nozzle head 24 into the cleaning tank 31 of the nozzle cleaning unit 30. In the nozzle cleaning unit 30, each process shown in FIG. 3 is executed under the control of the control unit 18.

  As shown in FIG. 3, the nozzle cleaning unit 30 first performs a rough cleaning process for roughly cleaning the nozzle head 24 inserted into the cleaning tank 31 (step S101). This facilitates removal of dirt adhering to the nozzle 241 and the surrounding member 245. The specific operation of the rough cleaning process will be described later with reference to FIG. 4A.

  Subsequently, in the nozzle cleaning unit 30, the above-described immersion tornado cleaning process is performed (step S102). Thereby, the dirt adhering to the nozzle 241 and the enclosure member 245 is surely washed away. The specific operation of the immersion tornado cleaning process will be described later with reference to FIG. 4B.

  Subsequently, in the nozzle cleaning unit 30, a first drain process is performed (step S103). This is a first stage process for discharging the cleaning liquid stored in the cleaning tank 31. The specific operation of the first drain process will be described later with reference to FIG. 4C.

  Subsequently, in the nozzle cleaning unit 30, a second drain process is performed (step S104). This is a second stage process for discharging the cleaning liquid stored in the cleaning tank 31. The specific operation of the second drain process will be described later with reference to FIG. 4D.

  Subsequently, the nozzle cleaning unit 30 performs a nozzle drying process (step S105). Thereby, the nozzle 241 and the surrounding member 245 wet with the cleaning liquid are dried. The specific operation of the nozzle drying process will be described later with reference to FIG. 4E.

  Hereinafter, each process of the nozzle cleaning process shown in FIG. 3 will be described more specifically. As shown in FIG. 4A, in the rough cleaning process, first, the valve 323 is opened, and the cleaning liquid L is supplied from the cleaning liquid supply source 324 (see arrow a1 in the figure).

  At this time, the cleaning liquid L is discharged from the first supply path 321 toward the first region 31a, and the tip of the nozzle 241 is roughly cleaned. The cleaning liquid L is discharged from the second supply path 322 toward the second region 31b, and the inside of the enclosure member 245 is roughly cleaned.

  In the rough cleaning process, the valve 343 is opened and the drain device 344 operates, and the cleaning liquid L is discharged from the first drain path 341 and the second drain path 342 (see arrows a2 and a3 in the figure). ).

  Subsequently, as shown in FIG. 4B, in the immersion tornado cleaning process, the valve 343 is closed and the discharge of the cleaning liquid L from the first drain path 341 and the second drain path 342 is temporarily stopped.

  On the other hand, the cleaning liquid L is continuously supplied from the cleaning liquid supply source 324 with the valve 323 being opened (see arrow a4 in the figure), and the cleaning liquid L discharged from the first supply path 321 and the second supply path 322 is supplied to the cleaning tank 31. The nozzle 241 and the enclosure member 245 are immersed.

  At this time, the liquid flow of the cleaning liquid L is swirled as described in the description of FIG. 2E, and the immersed nozzle 241 and the surrounding member 245 are tornado cleaned. Thereby, the dirt adhering to the nozzle 241 and the surrounding member 245 can be reliably removed.

  The cleaning liquid L that exceeds the upper limit liquid level of the cleaning tank 31 is discharged from the overflow drain path 331 (see arrow a5 in FIG. 4B).

  Subsequently, as shown in FIG. 4C, in the first drain process, the valve 323 is closed, and the supply of the cleaning liquid L from the cleaning liquid supply source 324 is stopped. On the other hand, the valve 343 is opened, and the cleaning liquid L stored in the cleaning tank 31 is discharged from the first drain path 341 and the second drain path 342 (see arrows a6 and a7 in the figure).

  As described above, at this time, the cleaning liquid L is discharged from the second drain passage 342 at a slower rate than that from the first drain passage 341. For this reason, even if the cleaning liquid L is completely discharged from the first region 31a in which the nozzle 241 has been immersed in the cleaning liquid L, the cleaning liquid L still remains in the second region 31b in a state in which the outer peripheral portion of the enclosure member 245 is immersed. .

  4D, in the second drain process, the cleaning liquid L is discharged from the second drain passage 342 at a low speed so as not to shake the liquid level of the cleaning liquid L remaining in the second region 31b. Is continued (see arrow a8 in the figure).

  In this way, by gradually discharging the cleaning liquid L immersed in the outer peripheral portion of the enclosing member 245 at a low speed, it is possible to substantially prevent the cleaning liquid L from remaining on the surface of the enclosing member 245.

  Next, as shown in FIG. 4E, in the nozzle drying process, after the cleaning liquid L is completely discharged and the valve 343 is closed, the nozzle 241 and the enclosure member 245 are lifted by the moving mechanism 25 (see arrow a9 in the figure). .

  Then, after the moving mechanism 25 positions the nozzle 241 and the surrounding member 245 in the vicinity of the discharge port of the inert gas supply path 351, the valve 352 is opened, and the inert gas is supplied from the inert gas supply source 353 to the nozzle 241. The nozzle 241 and the enclosure member 245 are dried by being discharged (see arrow a10 in the figure).

  At this time, the control unit 18 moves the nozzle 241 and the enclosure member 245 of the inert gas supply path 351 by the moving mechanism 25 so that the inert gas uniformly spreads inside the umbrella of the nozzle 241 and the enclosure member 245 without unevenness. It may be raised and lowered near the discharge port.

  In FIG. 4E, as indicated by an arrow a10 in the drawing, the inert gas is discharged in the horizontal direction (XY plane direction), and the discharge direction is, for example, along the inside of the umbrella of the enclosure member 245. It may be.

  FIG. 4F is a diagram illustrating a modified example of the nozzle drying process. Specifically, as shown in FIG. 4F, the inert gas supply path 351A may be provided such that the discharge direction of the discharge port is along the inside of the umbrella of the enclosure member 245 (in the drawing). Arrow a11).

  In such a case, the inert gas is first supplied along the inside of the umbrella of the enclosing member 245 and gathers from multiple directions in the vicinity of the nozzle 241 in the central portion, so that the nozzle 241 and the enclosing member 245 are inactivated as described above. The inert gas can be evenly distributed without being raised or lowered near the discharge port of the active gas supply path 351A.

  By operating the nozzle cleaning unit 30 as described above, the nozzle 241 to which the enclosing member 245 is attached can be efficiently cleaned with high performance.

  As described above, the substrate processing system 1 (corresponding to an example of the “substrate processing apparatus”) according to the present embodiment includes the nozzle 241, the enclosure member 245, the moving mechanism 25, and the nozzle cleaning unit 30 (“cleaning unit”). For example).

  The nozzle 241 discharges the processing liquid toward the wafer W (corresponding to an example of “substrate”). The enclosing member 245 is attached to the nozzle 241 so as to enclose the tip of the nozzle 241. The moving mechanism 25 moves the nozzle 241 and the surrounding member 245. The nozzle cleaning unit 30 cleans the nozzle 241 and the surrounding member 245 moved by the moving mechanism 25 with a cleaning liquid.

  Therefore, according to the substrate processing system 1 according to the present embodiment, the nozzle 241 and the surrounding member 245 attached to the nozzle 241 can be cleaned.

  In the above-described embodiment, the case where the surrounding member 245 has a hollow cone shape whose bottom surface is a circle is shown as an example, but may be a hollow cone shape whose bottom surface is a polygon. Further, the side surface of the cone may be a curved surface instead of a flat surface.

  In the embodiment described above, the cleaning liquid in the second region 31b is discharged from the second drain path 342 at a slower speed than the first drain path 341 in order to substantially prevent liquid remaining on the surface of the surrounding member 245. The case is given as an example.

  In other words, it is only necessary to change the relative position of the cleaning liquid and the surrounding member 245 so as not to fluctuate the cleaning liquid level in the second region 31b. Therefore, it can also be realized by moving the surrounding member 245 side. is there.

  Specifically, the enclosure member 245 immersed in the cleaning liquid in the second region 31b may be gradually separated from the second region 31b by the moving mechanism 25 at a moving speed slower than that during the liquid processing lifting / lowering operation. The operation by the moving mechanism 25 may be combined with the discharge of the cleaning liquid from the second drain path 342.

  In the above-described embodiment, an umbrella-shaped form having a linear inclination has been described as an example, but the shape of the surrounding member 245 is not limited to this. For example, the surrounding member 245 may have a bowl-like (substantially hemispherical) shape with a curved shape (for example, FIG. 5A). The enclosing member 245 does not necessarily have an inclined surface, and a part thereof has a vertical surface (a surface parallel to the Z-axis direction) or a horizontal surface (a surface parallel to the X-axis or Y-axis direction). (For example, FIG. 5B). The second supply path 322 only needs to be provided corresponding to the shape of the surrounding member 245, and may be in a position where the cleaning liquid can be directly supplied to the upper surface side of the surrounding member 245.

  In the above-described embodiment, the cleaning liquid is mainly HDIW and the inert gas is mainly N 2. However, the cleaning liquid and the inert gas are not limited respectively. These can be replaced with, for example, a cleaning liquid and an inert gas that can provide appropriate cleaning performance according to the type of processing liquid discharged from the nozzle 241 and the like.

  Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

DESCRIPTION OF SYMBOLS 1 Substrate processing system 2 Loading / unloading station 3 Processing station 4 Control apparatus 16 Processing unit 24 Nozzle head 25 Moving mechanism 30 Nozzle cleaning part 31 Cleaning tank 31a 1st area | region 31b 2nd area | region 241 Nozzle 245 Enclosure member 321 1st supply path 322 1st 2 supply path 331 overflow drain path 341 first drain path 342 second drain path 351, 351A inert gas supply path W wafer

Claims (8)

A nozzle for discharging a processing liquid toward the substrate;
An enclosing member attached to the nozzle so as to enclose the tip of the nozzle;
A moving mechanism for moving the nozzle and the enclosure member;
A substrate processing apparatus comprising: a cleaning unit that cleans the nozzle and the surrounding member moved by the moving mechanism with a cleaning liquid. The cleaning unit includes a cleaning tank,
The washing tank is
A first region in which the nozzle is immersed in the cleaning liquid;
The substrate processing apparatus according to claim 1, further comprising: a second region in which the enclosure member is immersed in the cleaning liquid. A first drain passage provided in communication with the first region for discharging the cleaning liquid;
The substrate processing apparatus according to claim 2, further comprising: a second drain passage that is provided in communication with the second region and discharges the cleaning liquid. The discharge rate of the cleaning liquid in the second drain path is
The substrate processing apparatus according to claim 3, wherein the substrate processing apparatus is slower than a discharge speed of the cleaning liquid in the first drain path. The moving mechanism is
The enclosure member immersed in the cleaning liquid in the second region is gradually separated from the second region at a moving speed that does not substantially cause liquid residue on the surface of the enclosure member. 4. The substrate processing apparatus according to 4. A supply path for supplying the cleaning liquid to the cleaning tank;
The outlet of the supply path is
The substrate processing apparatus according to any one of claims 2 to 5, wherein the substrate processing apparatus is disposed in a direction in which a vortex is formed in the cleaning tank by the flow of the cleaning liquid discharged from the discharge port. The substrate processing apparatus according to claim 1, wherein the enclosing member is formed in a hollow cone shape. Using a substrate processing apparatus comprising a nozzle that discharges a processing liquid toward the substrate, an enclosure member that is attached to the nozzle so as to surround the tip of the nozzle, and a moving mechanism that moves the nozzle and the enclosure member, The nozzle washing | cleaning method characterized by including the washing | cleaning process of wash | cleaning the said nozzle and the said enclosure member which were moved by the said moving mechanism with a washing | cleaning liquid.

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