JP2003257830A - Developing method and developing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent insolubles floating in a solution on a wafer from cohering in a developing process so as to reduce development failures and to shorten a developing time. <P>SOLUTION: An alkaline cleaning solution that is regulated so as to have a prescribed pH is reserved in a reservoir tank 83 serving as a supply source for a cleaning solution supply nozzle. The prescribed pH is selected so as to enable absolute value of ζ potential of the insolubles floating in the solution to attain its maximum. A developing solution is supplied to a wafer W, a still developing process is carried out for a prescribed time, and then the alkaline cleaning solution controlled so as to have the prescribed pH is supplied to the wafer W. By this setup, the ζ-potential of the insolubles can be restrained from approaching 0 mV while a cleaning operation is performed, so that the insolubles can be prevented from cohering. As a result, insolubles cohering and growing in grain diameter are prevented from adhering to the wafer W, and a cleaning time required for removing the insolubles attached to the wafer W is not necessary. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for developing a substrate.

[0002]

2. Description of the Related Art In a photolithography process in a semiconductor device manufacturing process, for example, a resist solution, which is a photosensitive material, is applied to the surface of a wafer and a resist coating process for forming a resist film is performed. An exposure process of exposing a wafer, a developing process of supplying a developing solution to the exposed wafer and developing the wafer are performed.

In the above developing process, a strong alkaline developing solution is usually supplied onto a wafer having a resist film formed thereon, and the wafer is statically developed for a predetermined time. After the developing step, a cleaning solution such as pure water is applied to the wafer. A cleaning step for supplying a wafer and cleaning the wafer is performed. In the developing step, a predetermined portion of the resist film, for example, an exposed portion is dissolved by the developing solution, and in the cleaning step, the insoluble matter which is not dissolved in the developing solution and is floating in the developing solution is removed.

[0004]

When pure water is supplied onto the wafer after the static development, the developer on the wafer is diluted and the pH value of the liquid on the wafer is rapidly lowered. Get closer to neutrality. Thus, when the liquid on the wafer approaches neutral, the zeta potential of insoluble matter such as resist particles dispersed in the liquid approaches 0 mV. Here, the zeta potential of the insolubilized material is used to evaluate the potential near the surface of the insolubilized material. Strictly speaking, the fixed layer formed around the insolubilized material in the liquid is based on the infinity of the insoluble material. It is the electric potential in a part (sliding surface) of the surrounding diffusion layer.

When the absolute value of the zeta potential of the insolubilized material decreases, the electric repulsive force between the insolubilized materials decreases, so that the insolubilized materials agglomerate and the particle size of the insolubilized material grows. The insolubilized material with grown grain size becomes an impurity that affects the development process and causes development defects.

Further, when each insoluble material aggregates, it tends to adhere to the wafer and the resist film. It is presumed that this is because the intermolecular force of the insoluble matter becomes large. The insoluble matter once attached to the wafer or the like cannot be easily removed even by shaking off the wafer, etc., and the remaining insoluble matter causes development defects. Further, in order to remove the adhered insoluble matter from the wafer or the like, it is necessary to continue supplying pure water to the wafer for a long time, and as a result, the total development processing time becomes long, resulting in a decrease in throughput.

The present invention has been made in view of the above points, and it is a development processing method for preventing aggregation of insoluble matter floating in a developing solution, reducing development defects and shortening development processing time. And to provide a development processing apparatus.

[0008]

According to a first aspect of the present invention, there is provided a development processing method for developing a substrate, which comprises developing the substrate by supplying a developing solution onto the substrate having a resist film formed thereon. And a cleaning step of cleaning the substrate by supplying a cleaning liquid onto the substrate after the developing step, wherein the liquid on the substrate at the cleaning step is an insoluble matter floating in the liquid. There is provided a development processing method characterized in that the pH value is adjusted so that the absolute value of the zeta potential is maximized.

There is a certain correlation between the pH value of the liquid and the zeta potential of the insoluble matter in the liquid,
Confirmed by the inventor. According to the present invention, the liquid on the substrate during the cleaning step is adjusted to a pH value such that the absolute value of the zeta potential of the insoluble matter is maximized. It is possible to reduce the size and prevent the insoluble matter from aggregating. Therefore, the grain size of the insoluble matter does not grow, and the insoluble matter does not adhere to the substrate or the like, so that development defects can be reduced. Further, since the cleaning time for removing the adhered insoluble matter can be reduced, the total development processing time can be shortened. The correlation curve between the pH value of the liquid on the substrate and the zeta potential of the insoluble matter may be obtained in advance, and the predetermined pH value may be calculated based on the correlation curve. The “insoluble matter” may be the one that is deposited from the resist film, the one that originally existed in the liquid, or the one that entered the liquid from the outside.

According to a second aspect of the present invention, there is provided a developing method for developing a substrate, comprising a developing step of supplying a developing solution onto the substrate having a resist film formed thereon to develop the substrate, and the developing step. And a cleaning step of supplying a cleaning solution onto the substrate to clean the substrate, wherein the liquid on the substrate during the cleaning step is an absolute value of the zeta potential of the insoluble matter suspended in the liquid. PH above which the specified value is exceeded
A development processing method is provided, which is adjusted to a value, and the predetermined value is not less than a minimum value at which aggregation of the insoluble matter is started.

According to the present invention, the pH value of the liquid on the substrate during the cleaning step is adjusted, and the absolute value of the zeta potential of the insolubilized material is maintained at a predetermined value or higher at which the insolubilized material does not aggregate. Can be prevented from growing in particle size.
Further, since the insoluble matter is dispersed and stable and does not adhere to the substrate or the like, development defects caused by the adhesion can be reduced. Further, since the cleaning time for removing the adhered insoluble matter can be reduced, the total development processing time can be shortened. The predetermined value is determined by experiments or the like according to the type of resist film, and is preferably at least 30 mV or higher.

The pH value may be adjusted by using a cleaning liquid adjusted to a predetermined pH value as the cleaning liquid. In this case, the pH value of the liquid on the substrate can be adjusted accurately. The adjustment of the pH value may be performed by supplying a pH value adjusting liquid onto the substrate separately from the cleaning liquid.

In the processing method, the neutral cleaning liquid may be supplied onto the substrate after the liquid on the substrate is adjusted to the predetermined pH value.

According to a fifth aspect of the present invention, there is provided a development processing apparatus in which a developing step of supplying a developing solution to a substrate and a cleaning step of subsequently supplying a cleaning solution to the substrate are performed. There is provided a development processing apparatus comprising a pH adjusting liquid supply section for supplying a pH adjusting liquid onto a substrate for adjusting the pH value of the liquid.

According to the present invention, the pH value of the liquid on the substrate during the cleaning process is adjusted to a value such that the absolute value of the zeta potential of the insoluble matter floating in the liquid is maintained at the maximum during development. can do. As a result, the insolubles do not aggregate with each other, the grain size growth of the insolubles can be suppressed, and proper development processing can be performed. Further, it is possible to prevent the insoluble matter from adhering to the substrate or the like and causing a development defect. Furthermore, the cleaning time for removing the insoluble matter adhering to the substrate can be reduced, and the total development processing time can be shortened.

The development processing apparatus is separately provided with the pH adjusting solution supply section and a cleaning solution supply section for supplying a cleaning solution to the substrate, and further, each of the pH value adjusting solution supply section and the cleaning solution supply section. A control unit that controls the supply flow rate of the liquid may be provided. In such a case, during the substrate cleaning process, the pH adjusting liquid and the cleaning liquid are respectively supplied to the substrate at a predetermined flow rate, so that the liquid on the substrate can be adjusted to a predetermined pH value.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Preferred embodiments of the present invention will be described below. FIG. 1 is a plan view schematically showing the configuration of a coating and developing treatment system 1 including a developing treatment apparatus for carrying out the developing treatment method according to the present embodiment.
Is a front view of the coating and developing treatment system 1, and FIG.
It is a rear view of the coating and developing treatment system 1.

As shown in FIG. 1, the coating / development processing system 1 carries in and out 25 wafers W to / from the coating / development processing system 1 from the outside in cassette units, and carries in / out the wafer W from / to the cassette C, for example. A cassette station 2, a processing station 3 in which various processing devices for performing predetermined processing in a single-wafer type in a coating and developing processing step are arranged in multiple stages, and a processing station 3 provided adjacent to the processing station 3. It has a structure in which the interface unit 4 for transferring the wafer W to and from the exposure apparatus which is not connected is integrally connected.

In the cassette station 2, a plurality of cassettes C can be placed in a line at a predetermined position on the cassette mounting table 5 in the X direction (vertical direction in FIG. 1).
The cassette C can accommodate a plurality of wafers W arranged in multiple stages. Then, the wafer carrier 7 that can be moved in the cassette arrangement direction (X direction) and the wafer arrangement direction of the wafers W accommodated in the cassette C (Z direction; vertical direction) is movable along the conveyance path 8. It is provided so that each cassette C can be selectively accessed.

The wafer carrier 7 has an alignment function for aligning the wafer W. The wafer carrier 7 is also configured to be accessible to the extension device 32 belonging to the third processing device group G3 on the processing station 3 side as described later.

The processing station 3 is provided with a main carrier unit 13 at the center thereof, and various processing units are arranged in multiple stages around the main carrier unit 13 to form a processing unit group. In this coating and developing treatment system 1, four processing device groups G1, G2, G3 and G4 are arranged, and the first and second processing device groups G1 and G2 are arranged on the front side of the coating and developing treatment system 1. The third processing unit group G3 is
The fourth processing unit group G4 is arranged adjacent to the cassette station 2, and the fourth processing unit group G4 is arranged adjacent to the interface unit 4. Further, as an option, a fifth processing unit group G5 indicated by a broken line can be separately arranged on the back side. The main transfer device 13 includes the processing device groups G1, G2, G3,
The wafer W can be loaded / unloaded into / from various processing devices, which will be described later, arranged in G4 and G5. The number and arrangement of the processing device groups differ depending on the type of processing performed on the wafer W, and the number of processing device groups can be arbitrarily selected as long as it is one or more.

In the first processing unit group G1, for example, as shown in FIG. 2, a resist coating device 17 for coating a resist solution on the wafer W to form a resist film on the wafer W, and the developing process according to the present embodiment. The development processing device 18 for carrying out the processing method is arranged in two stages in order from the bottom. Similarly, in the second processing device group G2, the resist coating device 19 and the developing processing device 20 are arranged in two stages in order from the bottom.

In the third processing unit group G3, for example, as shown in FIG. 3, a cooling unit 30 for cooling the wafer W,
An adhesion device 31 for enhancing the fixability of the resist liquid and the wafer W, an extension device 32 for transferring the wafer W, pre-baking devices 33, 34 for evaporating the solvent in the resist liquid, and a post-development processing device. Post-baking devices 35 for performing heat treatment are stacked in order from the bottom, for example, in six stages.

In the fourth processing device group G4, for example, a cooling device 40, an extension cooling device 41 for naturally cooling the mounted wafer W, an extension device 42, a cooling device 43, and a post-exposure baking process for performing a heat treatment after exposure are performed. The devices 44 and 45 and the post-baking device 46 are stacked in order from the bottom, for example, in seven stages.

In the center of the interface section 4, the interface shown in FIG.
For example, a wafer carrier 50 is provided as shown in FIG. The wafer carrier 50 is configured to be freely movable in the X direction (vertical direction in FIG. 1), the Z direction (vertical direction), and rotatable in the θ direction (rotational direction about the Z axis). The extension / cooling device 41 and the extension device 4 belonging to the fourth processing device group G4.
2. By accessing the peripheral exposure device 51 and an exposure device (not shown), the wafer W can be transferred to each. The exposure apparatus irradiates the wafer W on which the resist film is formed with a predetermined pattern of light to expose the wafer W.

Next, the structure of the above-described development processing device 18 will be described in detail. As shown in FIGS. 4 and 5, a spin chuck 60 that horizontally attracts and holds the wafer W is provided in the casing 18 a of the development processing apparatus 18. For example, below the spin chuck 60, a drive mechanism 61 that drives the spin chuck 60 is provided. The drive mechanism 61 is a rotation drive unit (not shown) including a motor or the like for rotating the spin chuck 60 at a predetermined rotation speed.
Also, it has a lifting drive unit (not shown) including a motor, a cylinder, or the like that moves the spin chuck 60 up and down.

Outside the spin chuck 60, an annular cup 62 having an open upper surface is provided so as to surround the spin chuck 60. The cup 62 receives the developer and the like scattered from the wafer W which is held by the spin chuck 60 and rotated, and prevents contamination of peripheral devices. At the bottom of the cup 62, a drain pipe 63 for draining the developer and the like scattered from the wafer W and the cup 6 are provided.
An exhaust pipe 64 for exhausting the atmosphere in 2 is connected.

Outside the cup 62, a substantially cylindrical out cup 65 having an open upper surface is provided so as to surround the cup 62, and the developing solution from the wafer W that cannot be received by the cup 62 is provided. It can prevent the scattering of developer etc.

As shown in FIG. 5, on the outside of the out cup 65, for example, on the outside in the negative direction of the M direction (left side in FIG. 5),
A standby part T is installed, and a developer supply nozzle 70 for supplying a developer to the wafer W is on standby in the standby part T.
In this embodiment, for example, TMAH (N (C
A strongly alkaline developing solution having a pH of about 13 such as H ₃ ) ₄ OH) is supplied from the developing solution supply nozzle 70.

The developing solution supply nozzle 70 has, for example, an elongated shape longer than at least the diameter of the wafer W, and a plurality of ejection openings (not shown) arranged in a line along the longitudinal direction at the lower part thereof. ) Is provided. The developing solution supply nozzle 70 can eject the developing solution at the same flow rate and the same flow rate from the plurality of ejection ports.

The developing solution supply nozzle 70 is held by an arm 71, and the arm 71 is movable on a linear rail 72 laid in the M direction (left and right direction in FIG. 5) by a moving mechanism (not shown). Is. The rail 72 extends from the standby portion T to the outside of the out cup 65 on the positive side in the M direction, and the developer supply nozzle 70 at least extends from the standby portion T to the end portion of the cup 62 on the positive side in the M direction. You can move. The developing solution supply nozzle 70 is held by an arm 71 so that its longitudinal direction is perpendicular to the M direction.
While the developing solution supply nozzle 70 discharges the developing solution, it moves from one end of the wafer W to the other end thereof,
The developer can be supplied to the entire surface. In addition, in the standby unit T,
A cleaning tank 73 for storing a predetermined solvent for cleaning the developing solution supply nozzle 70 is provided.

The positive direction side of the out cup 75 in the M direction (see FIG. 5).
A standby unit U is installed outside (on the right side of FIG. 1), and the standby unit U has a cleaning liquid supply nozzle 8 as a pH adjusting liquid supply unit capable of supplying, for example, two types of cleaning liquids to the wafer W.
0 is waiting. The cleaning liquid supply nozzle 80 is held by a rinse arm 81, and this rinse arm 81 is
For example, it can move on the same rail 72 as the arm 71. The cleaning liquid supply nozzle 80 is held by the rinse arm 81 so that the cleaning liquid can be supplied to the central portion of the wafer W when the cleaning liquid supply nozzle 80 moves onto the wafer W in the cup 62.

The cleaning liquid supply nozzle 80 is provided with two storage tanks 83, 84 via a pipe 82 as shown in FIG.
Connected to. The storage tank 83 has a predetermined pH.
A value, for example, an alkaline cleaning liquid adjusted to pH 10 is stored. The alkaline cleaning solution is, for example, pure water to which a developing solution is added. The predetermined pH value is obtained from a correlation curve between the zeta potential of the insoluble matter floating in the liquid and the pH value of the liquid obtained in advance as shown in FIG. 7, and the zeta potential of the insoluble matter is obtained. The pH value with the maximum absolute value of is selected.

On the other hand, the storage tank 84 stores, for example, a neutral cleaning liquid such as pure water. As shown in FIG. 6, a three-way valve 85 is provided at a branch point between the storage tank 83 and the storage tank 84 in the pipe 82, and an alkaline cleaning liquid and pure water are selectively supplied to the cleaning liquid supply nozzle 80. it can.

As shown in FIG. 5, for example, a cleaning tank 86 is provided in the standby portion U of the cleaning liquid supply nozzle 80. For example, the cleaning liquid supply nozzle 80 is immersed in the cleaning tank 86 in which a solvent is stored, The cleaning liquid adhering to the tip of the cleaning liquid supply nozzle 80 can be washed off. Further, it is possible to prevent the cleaning liquid adhering to the tip portion from drying and causing particles.

A transfer port 9 for loading / unloading the wafer W into / from the development processing apparatus 18 is provided on the side surface of the casing 18a.
0 is provided, and the transfer port 90 can be opened and closed by a shutter 91.

Next, a development processing method carried out by the development processing apparatus 18 configured as described above will be described together with a photolithography process performed in the coating and developing processing system 1.

First, the wafer W taken out of the cassette C by the wafer carrier 7 is carried to the extension device 32 belonging to the third processing device group G3, and then to the adhesion device 31 by the main carrier device 13. In this adhesion device 31, the adhesiveness of the resist is improved, for example, a wafer W coated with HMDS
Is subsequently transferred to the cooling device 30, cooled to a predetermined temperature, and then transferred to the resist coating device 17.
In the resist coating process 17, for example, a positive resist solution is coated on the wafer W to form a resist film on the wafer W.

After that, the wafer W is sequentially transferred by the main transfer device 13 to the pre-baking device 33 and the extension cooling device 41, and the wafer transfer body 50 is further transferred.
Are conveyed to the peripheral exposure device 51 and subjected to predetermined processing in each device. Next, the wafer W is transferred to an exposure device (not shown), and the wafer W is irradiated with a predetermined pattern of light. By this exposure, the exposed portion of the resist film becomes soluble in the developing solution.

The wafer W after this exposure processing is transferred to the extension device 42 by the wafer transfer body 50, and then the wafer W is subjected to predetermined processing by the post-exposure baking device 44 and the cooling device 43 and then developed. It is conveyed to the processing device 18.

Wafer W carried into development processing apparatus 18
Are adsorbed and held on the spin chuck 60. Wafer W
When is absorbed and held, the developing process of the wafer W is started. In this developing process, first, the developing solution supply nozzle 70
Near the end of the wafer W on the positive side in the M direction while moving the wafer W to the start position S near the end of the wafer W on the negative side in the M direction and discharging the developing solution from the start position S. To the end position E of. As a result, a predetermined amount of the developing solution is placed on the wafer W and the static development is started for a predetermined time. In this static development, most of the resist film in the exposed area is dissolved in the developing solution, and a part of the resist film becomes insoluble matter and floats in the developing solution.

When the static development is performed for a predetermined time and the development process is completed, the wafer W cleaning process is performed. In the cleaning process, first, the cleaning liquid supply nozzle 80 moves to above the central portion of the wafer W, and the wafer W is rotated at a predetermined speed. Then, the alkaline cleaning liquid is first discharged from the cleaning liquid supply nozzle 80, and the alkaline cleaning liquid of pH 10 is supplied onto the wafer W. The developing solution on the wafer W is replaced with the alkaline cleaning solution, and the pH of the liquid on the wafer W is maintained at 10.
By doing so, the zeta potential of the insoluble matter in the liquid on the wafer W is, for example, -70 as shown in FIG.
It is maintained at mV, and the absolute value of the zeta potential is maintained at the maximum. During this time, the insoluble matter on the wafer W is suppressed from aggregating and is scattered to the outside of the wafer W by the centrifugal force.

After the alkaline cleaning liquid is supplied for a predetermined time, the three-way valve 85 is switched, and pure water is supplied onto the wafer W this time. By supplying this pure water, the development of the resist film is completely stopped, and the insoluble matter remaining on the wafer W is also completely removed. After a predetermined time has passed,
When the supply of pure water is stopped and the cleaning process is completed, the wafer W is rotated at high speed and the wafer W is shaken off and dried.
When this drying process is completed, the wafer W is transferred from the spin chuck 60 to the main transfer device 13, the wafer W is carried out of the developing processing device 18, and a series of developing processes is completed.

According to this embodiment, during the cleaning process, p
Since the alkaline cleaning liquid of H10 is supplied and the absolute value of the zeta potential of the insoluble matter on the wafer W is maintained at the maximum, the electric repulsive force between the insoluble matter is maintained and the insoluble matter can be prevented from agglomerating. Therefore, it is possible to prevent the grain size growth of the insoluble matter and the adhesion of the insoluble matter to the wafer W, etc. As a result, the development defects can be reduced. Further, since the cleaning time for removing the insoluble matter and the like adhering to the wafer W is not required, the total development processing time can be shortened.

Further, since pure water is supplied after the alkali cleaning liquid is supplied, the development of the resist film can be completely stopped, and impurities such as insoluble matter remaining on the wafer W are completely removed. be able to.

In the above embodiment, the pH value of the liquid on the wafer W is adjusted by supplying the alkali cleaning solution whose pH value has been adjusted to the wafer W in advance. However, the cleaning solution and the pH adjusting solution are separately provided. The pH value of the liquid supplied on the wafer W may be adjusted.

FIG. 8 shows such an example. The rinse arm 100 supplies a pure water supply nozzle 101 as a cleaning liquid supply unit for supplying a cleaning liquid, for example, pure water, and a pH adjusting liquid, for example, a developing liquid. It holds a pH adjusting liquid supply nozzle 102 as a pH adjusting liquid supply unit. The pure water supply nozzle 101 and the pH adjusting liquid supply nozzle 102 are held by the rinse arm 100 so as to be able to move upward near the center of the wafer W.

The pure water supply nozzle 101 is connected to a pure water supply device 104 by a pipe 103 as shown in FIG. 9, and the pH adjusting liquid supply nozzle 102 is connected to a pH adjusting liquid supply device 106 by a pipe 105. Connected for communication. Pure water supply device 104 and pH adjusting liquid supply device 1
06 is provided with a pumping mechanism such as a pump, a storage tank, etc., not shown, and a predetermined flow rate of pure water or p
The H adjustment liquid can be supplied to each of the nozzles 101 and 102.

The supply flow rates of the respective liquids from the pure water supply device 104 and the pH adjusting liquid supply device 106 are controlled by the controller 107. The control unit 107 determines that the liquid on the wafer W during the cleaning process has a set pH value, for example, pH 10
The supply flow rate of each liquid can be controlled so that

During the cleaning process performed after the developing process, the pure water supply nozzle 101 and the pH adjusting liquid supply nozzle 10
2 moves to the upper part of the vicinity of the center of the wafer W, and a predetermined flow rate of pure water and a pH adjusting liquid are applied to each nozzle 10 on the rotated wafer W.
1, 102 is discharged. The liquid discharged and mixed onto the wafer W is maintained at, for example, around pH 10, and the wafer W is cleaned in this state. After the lapse of a predetermined time, the supply of the pH adjusting liquid from the pH adjusting liquid supply nozzle 102 is stopped, and only the pure water is supplied from the pure water supply nozzle 101. Thereafter, the supply of pure water is stopped, and the wafer W is shaken off and dried as in the above-described embodiment.

In this example, since the pure water and the pH adjusting liquid are respectively discharged from the dedicated nozzles, the respective liquids do not mix with each other in the nozzles or the pipes, and the stable liquid supply can be always realized. Further, when only pure water is supplied onto the wafer W, it suffices to stop the supply of the pH adjusting liquid, so that this switching can be performed smoothly. The pH adjusting liquid is not limited to TMAH (N (CH ₃ ) ₄ OH), but N
It may be H ₄ or the like.

Further, in the above-mentioned embodiment, the pH value of the liquid on the wafer W is adjusted so that the absolute value of the zeta potential of the insoluble matter becomes maximum, but the absolute value of the zeta potential of the insoluble matter is The pH value of the liquid on the wafer W may be adjusted so as to be equal to or higher than a predetermined value at which the insoluble matter is not aggregated.
In such a case, for example, as shown in FIG. 7, a predetermined value V ₀ that is the absolute value of the minimum zeta potential at which the insoluble matter does not aggregate.
And a pH range in which the absolute value of the zeta potential of the insoluble matter can be maintained at a predetermined value V ₀ or more, for example, pH 8 to 14, are obtained in advance. And, during the washing process, p within the above pH range is used.
The cleaning liquid adjusted to H8 is supplied onto the wafer W. By doing so, similarly to the above-described embodiment, the agglomeration of the insoluble matter is prevented during the cleaning process, the grain size growth of the insoluble matter and the adhesion of the insoluble matter to the wafer W are suppressed, and the development defects can be reduced.

In the above embodiment, the present invention is applied to the developing treatment method for the wafer W. However, the present invention is applicable to substrates other than semiconductor wafers such as LCD substrates and mask reticle substrates for photomasks. It can also be applied to the development processing method.

[0054]

According to the present invention, it is possible to suppress the grain size growth of the insoluble matter floating in the developing solution during the development processing and prevent the insoluble matter from adhering to the substrate. It is possible to reduce development defects that occur. Therefore, the yield is improved. Further, since the cleaning time for removing the insoluble matter adhering to the substrate is not required, the development processing time is shortened and the throughput is improved.

[Brief description of drawings]

FIG. 1 is a plan view showing the outer appearance of a coating and developing treatment system having a developing treatment apparatus for carrying out the developing treatment method according to the present embodiment.

FIG. 2 is a front view of the coating and developing treatment system of FIG.

FIG. 3 is a rear view of the coating and developing treatment system of FIG.

FIG. 4 is an explanatory view of a vertical cross section of the development processing apparatus.

FIG. 5 is an explanatory view of a cross section of the development processing apparatus.

FIG. 6 is an explanatory diagram showing a supply system of a cleaning liquid supply nozzle.

FIG. 7 is a graph showing a correlation curve between a zeta potential of an insoluble matter in a liquid and a pH value of the liquid.

FIG. 8 is an explanatory view of a cross section showing a development processing apparatus including a pH adjusting liquid supply nozzle.

9 is an explanatory diagram showing a supply system of a pH adjusting liquid supply nozzle and a pure water supply nozzle of FIG.

[Explanation of symbols]

1 Coating and developing system 18 Development Processing Equipment 70 Developer Supply Nozzle 80 Cleaning liquid supply nozzle S start position E end position W wafer

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H01L 21/304 648 H01L 21/30 569F 569E F term (reference) 2H096 AA25 GA18 4D075 AC65 AC99 BB65Z BB99Y CA48 DA06 DB14 DC22 EA07 EA45 4F042 AA07 AB00 BA21 EB09 EB13 EB18 EB25 EB29 5F046 LA12 LA14 LA19

Claims (7)

[Claims] 1. A development processing method for developing a substrate, comprising supplying a developing solution onto a substrate having a resist film formed thereon,
A developing process for developing the substrate; and a cleaning process for supplying a cleaning liquid onto the substrate to clean the substrate after the developing process, wherein the liquid on the substrate at the cleaning process is suspended in the liquid. The developing method is characterized in that the pH value is adjusted so that the absolute value of the zeta potential of the insoluble matter is maximized. 2. A development processing method for developing a substrate, comprising supplying a developing solution onto the substrate having a resist film formed thereon,
A developing process for developing the substrate; and a cleaning process for supplying a cleaning liquid onto the substrate to clean the substrate after the developing process, wherein the liquid on the substrate at the cleaning process is suspended in the liquid. The pH value is adjusted such that the absolute value of the zeta potential of the insoluble matter is equal to or higher than a set value, and the set value is equal to or higher than the lowest value at which aggregation of the insoluble matter is started. Development processing method. 3. The development processing method according to claim 1, wherein the adjustment of the pH value is performed by using a cleaning solution having a predetermined pH value as the cleaning solution. . 4. The development processing method according to claim 1, wherein the pH value is adjusted by supplying a pH adjusting liquid onto the substrate separately from the cleaning liquid. 5. The neutral cleaning liquid is supplied onto the substrate after adjusting the liquid on the substrate to the pH value, according to claim 1, 2, 3 or 4. Development processing method. 6. A development processing apparatus in which a developing step of supplying a developing solution to a substrate and a cleaning step of subsequently supplying a cleaning solution to the substrate are performed, wherein a pH value of the liquid on the substrate during the cleaning step is adjusted. In order to achieve this, a development processing apparatus comprising a pH adjusting liquid supply unit for supplying a pH adjusting liquid onto the substrate. 7. The pH adjusting liquid supply unit and a cleaning liquid supply unit for supplying a cleaning liquid to the substrate are independently provided, and further, supply of each liquid from the pH adjusting liquid supply unit and the cleaning liquid supply unit. The development processing apparatus according to claim 6, further comprising a control unit that controls a flow rate.