JP4780808B2 - Development processing method and development processing apparatus - Google Patents

Development processing method and development processing apparatus Download PDF

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JP4780808B2
JP4780808B2 JP2009022347A JP2009022347A JP4780808B2 JP 4780808 B2 JP4780808 B2 JP 4780808B2 JP 2009022347 A JP2009022347 A JP 2009022347A JP 2009022347 A JP2009022347 A JP 2009022347A JP 4780808 B2 JP4780808 B2 JP 4780808B2
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substrate
supply nozzle
developer
gas
development processing
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JP2010182715A (en
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太郎 山本
孝介 吉原
勇一 吉田
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Tokyo Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3071—Process control means, e.g. for replenishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • B05B1/3033—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages the control being effected by relative coaxial longitudinal movement of the controlling element and the spray head
    • B05B1/304—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages the control being effected by relative coaxial longitudinal movement of the controlling element and the spray head the controlling element being a lift valve
    • B05B1/3046—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages the control being effected by relative coaxial longitudinal movement of the controlling element and the spray head the controlling element being a lift valve the valve element, e.g. a needle, co-operating with a valve seat located downstream of the valve element and its actuating means, generally in the proximity of the outlet orifice
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

Description

この発明は、例えば半導体ウエハや液晶ガラス基板（ＦＰＤ基板）等の現像処理方法及び現像処理装置に関するものである。   The present invention relates to a development processing method and a development processing apparatus such as a semiconductor wafer and a liquid crystal glass substrate (FPD substrate).

一般に、半導体デバイスの製造においては、例えば半導体ウエハやＦＰＤ基板等（以下にウエハ等という）にレジスト液を塗布し、マスクパターンを露光処理して回路パターンを形成させるために、フォトリソグラフィ技術が利用されている。このフォトリソグラフィ技術においては、スピンコーティング法によりウエハ等にレジスト液を塗布し、これにより形成されたレジスト膜を所定の回路パターンに応じて露光し、この露光パターンを現像処理することによりレジスト膜に回路パターンが形成されている。   Generally, in the manufacture of semiconductor devices, for example, a photolithography technique is used to form a circuit pattern by applying a resist solution to a semiconductor wafer, an FPD substrate or the like (hereinafter referred to as a wafer) and exposing the mask pattern. Has been. In this photolithography technique, a resist solution is applied to a wafer or the like by a spin coating method, the resist film formed thereby is exposed according to a predetermined circuit pattern, and this exposure pattern is developed to form a resist film. A circuit pattern is formed.

このようなフォトリソグラフィ工程において、近年のデバイスパターンの微細化、薄膜化に伴いデバイスパターンのスリミング技術や露光の解像度を上げる要請が高まっている。露光の解像度を上げる方法の一つとして、ウエハの表面に盛られた現像液の表面に温度調整された気体を吹き付けて現像液の温度を最適温度にする方法が知られている（例えば特許文献１参照）。   In such a photolithography process, with the recent miniaturization and thinning of device patterns, there is an increasing demand for increasing the device pattern slimming technique and the exposure resolution. As one method for increasing the resolution of exposure, a method is known in which a temperature-adjusted gas is blown onto the surface of a developer placed on the surface of a wafer to optimize the temperature of the developer (for example, Patent Documents). 1).

また、従来の現像処理装置として、ウエハを水平に保持した基板保持部を鉛直軸回りに回転させながらウエハの外周縁側から中心部に向かう半径方向に現像液供給ノズルを移動させることにより、ウエハの表面に螺旋状に現像液を液盛りして現像処理を施すものが知られている（例えば、特許文献２参照）。   Further, as a conventional development processing apparatus, by moving a developing solution supply nozzle in the radial direction from the outer peripheral edge side of the wafer toward the center while rotating the substrate holding portion that holds the wafer horizontally around the vertical axis, There is known a technique in which a developing solution is spirally formed on the surface and subjected to development processing (see, for example, Patent Document 2).

特開平２−４６４６５号公報（特許請求の範囲、第１図）Japanese Patent Laid-Open No. 2-46465 (Claims, Fig. 1) 特開２００５−２１００５９号公報（特許請求の範囲、図６）Japanese Patent Laying-Open No. 2005-210059 (Claims, FIG. 6)

しかしながら、特許文献１記載の技術においては、ウエハ等の表面に現像液を液盛りした後に、気体吹出ノズルより温度調整された気体を現像液の表面に吹き付ける技術であるため、現像液の供給と気体の吹き付けとの間に時間差が生じ、現像液の温度調整による解像性が十分得られないという問題がある。   However, in the technique described in Patent Document 1, since the developer is deposited on the surface of a wafer or the like and then the temperature-adjusted gas is sprayed onto the surface of the developer from the gas blowing nozzle, There is a problem that a time difference occurs between the gas spraying and sufficient resolution cannot be obtained by adjusting the temperature of the developer.

また、特許文献２に記載の技術においては、ウエハの外周縁側から中心部に向かう半径方向に現像液供給ノズルを移動させながら現像液を液盛りするため、ウエハ表面に液盛りされた現像液はノズル移動方向の後方側に液盛りの裾部が生じ、該裾部においてはウエハ表面の回路パターンに接触する現像液の量が少ないため解像性が十分得られない懸念がある。特に、ＥＵＶ（Extreme Ultra Violet）レジストにおいては、波長が１３〜１４ｎｍと極めて短い軟Ｘ線を利用するため、解像性が十分得られない。   In the technique described in Patent Document 2, the developer is accumulated while moving the developer supply nozzle in the radial direction from the outer peripheral edge side of the wafer toward the center portion. There is a concern that a liquid-filled skirt is formed on the rear side in the nozzle movement direction, and the resolution is not sufficiently obtained at the skirt because the amount of the developer contacting the circuit pattern on the wafer surface is small. In particular, an EUV (Extreme Ultra Violet) resist uses soft X-rays with an extremely short wavelength of 13 to 14 nm, so that sufficient resolution cannot be obtained.

この発明は上記事情に鑑みてなされたもので、基板の表面に供給されて液盛りされた現像液の液盛りの裾部に活性化を促して解像性の向上及び現像処理効率の向上を図れるようにした現像処理方法及び現像処理装置を提供することを目的とするものである。   The present invention has been made in view of the above circumstances, and promotes activation at the bottom of the puddle of the developer supplied and poured onto the surface of the substrate to improve resolution and development processing efficiency. An object of the present invention is to provide a development processing method and a development processing apparatus which can be achieved.

上記課題を解決するために、この発明の現像処理方法は、表面にレジストが塗布され、露光された後の基板の表面に現像液を供給して現像を行う現像処理方法を前提とし、 基板の中心から外周方向に向かうように中心側に気体供給ノズルを外周方向側に現像液供給ノズルを互いに隣接した状態で一体化して配置して、 基板を水平に保持した基板保持部を鉛直軸回りに回転させながら基板の中心部上方から上記現像液供給ノズルより現像液を供給して液盛りすると同時に、上記現像液供給ノズルと上記気体供給ノズルとを基板の中心部から基板の外周縁に向かって径方向に移動させながら、更に上記現像液供給ノズルの移動方向の後方側に生じる現像液の裾部に向かって上記気体供給ノズルから処理時の基板の温度よりも高温の気体を供給して現像処理を行う、ことを特徴とする（請求項１）。 In order to solve the above-described problems, the development processing method of the present invention is based on the development processing method in which a resist is applied to the surface and a developer is supplied to the surface of the substrate after exposure to perform development . A gas supply nozzle on the center side and a developer supply nozzle on the outer peripheral side are integrated and arranged adjacent to each other so as to go from the center to the outer peripheral direction, and the substrate holding unit that holds the substrate horizontally is arranged around the vertical axis. While rotating, the developer is supplied from the developer supply nozzle from above the center of the substrate and accumulated, and at the same time, the developer supply nozzle and the gas supply nozzle are moved from the center of the substrate toward the outer periphery of the substrate. While moving in the radial direction, a gas having a temperature higher than the temperature of the substrate at the time of processing is supplied from the gas supply nozzle toward the bottom of the developer generated on the rear side in the moving direction of the developer supply nozzle. Performing image processing, characterized in that (claim 1).

この発明の現像処理装置は、請求項１記載の現像処理方法を具現化するもので、表面にレジストが塗布され、露光された後の基板の表面に現像液を供給して現像を行う現像処理装置を前提とし、基板を水平に保持する基板保持部と、上記基板保持部を鉛直軸回りに回転させる回転駆動機構と、上記基板保持部に保持された基板の表面に対して現像液を供給する現像液供給ノズルと、上記現像液供給ノズルと互いに隣接した状態で一体化され、上記基板の表面に供給された現像液の液盛りの裾部に向かって気体を供給する気体供給ノズルと、気体供給源から上記気体供給ノズルに供給される気体の温度を処理時の基板の温度より高温に調整する温度調整部と、上記現像液供給ノズル及び気体供給ノズルを基板の中心から外周縁側に向かって移動する移動機構と、上記気体供給源と気体供給ノズルとを接続する気体供給管路に介設される気体流量調整可能な弁機構と、上記回転駆動機構、温度調整部、移動機構及び弁機構を制御する制御手段と、を具備し、上記制御手段からの制御信号に基づいて、基板の中心から外周方向に向かうように中心側に上記気体供給ノズルを外周方向側に上記現像液供給ノズルを配置して、鉛直軸回りに回転する基板の中心部上方から上記現像液供給ノズルより現像液を供給して液盛りすると同時に、上記現像液供給ノズルと上記気体供給ノズルとを基板の中心部から基板の外周縁に向かって径方向に移動させながら、更に上記現像液供給ノズルの移動方向の後方側に生じる現像液の裾部に向かって上記気体供給ノズルから処理時の基板の温度よりも高温の気体を供給して現像処理を行う、ことを特徴とする（請求項４）。 The development processing apparatus of the present invention embodies the development processing method according to claim 1, wherein a resist is applied to the surface and a developing solution is supplied to the surface of the substrate after exposure to perform development. Assuming the apparatus, a substrate holding unit that holds the substrate horizontally, a rotation drive mechanism that rotates the substrate holding unit around a vertical axis, and a developer supplied to the surface of the substrate held by the substrate holding unit A developer supply nozzle that is integrated with the developer supply nozzle adjacent to each other, and a gas supply nozzle that supplies gas toward the bottom of the liquid deposit of the developer supplied to the surface of the substrate; A temperature adjusting unit that adjusts the temperature of the gas supplied from the gas supply source to the gas supply nozzle to be higher than the temperature of the substrate during processing, and the developer supply nozzle and the gas supply nozzle from the center of the substrate toward the outer peripheral side. Move A moving mechanism, a valve mechanism capable of adjusting the gas flow rate interposed in a gas supply line connecting the gas supply source and the gas supply nozzle, the rotational drive mechanism, the temperature adjusting unit, the moving mechanism, and the valve mechanism. Control means for controlling, and based on a control signal from the control means, the gas supply nozzle is arranged at the center side and the developer supply nozzle is arranged at the outer circumference direction side from the center of the substrate toward the outer circumference direction. Then, the developer is supplied from the developer supply nozzle from above the central portion of the substrate rotating around the vertical axis , and at the same time, the developer supply nozzle and the gas supply nozzle are moved from the center of the substrate to the substrate. While moving in the radial direction toward the outer peripheral edge of the developing solution, the temperature of the developing solution supply nozzle is higher than the temperature of the substrate during processing from the gas supply nozzle toward the bottom of the developing solution generated on the rear side in the moving direction of the developing solution supply nozzle. Supplying the body to perform the development processing, characterized in that (claim 4).

この発明において、上記気体として不活性ガス例えば窒素（Ｎ２）ガスを使用することができる（請求項２，５）。   In the present invention, an inert gas such as nitrogen (N 2) gas can be used as the gas.

また、請求項３記載の発明は、請求項１又は２記載の現像処理方法において、現像処理を行う基板上のレジストの種類に応じて、上記基板保持部により保持された基板の回転数、現像液供給ノズル及び気体供給ノズルの移動速度、気体の吐出量及び気体の温度を制御する、ことを特徴とする。   According to a third aspect of the present invention, there is provided the development processing method according to the first or second aspect, wherein the number of rotations of the substrate held by the substrate holding portion and development are determined according to the type of resist on the substrate to be developed. The moving speed of the liquid supply nozzle and the gas supply nozzle, the discharge amount of the gas, and the temperature of the gas are controlled.

また、請求項６記載の現像処理装置は、請求項４又は５記載の現像処理装置において、上記制御手段は、現像処理を行う基板上のレジストの種類に応じた現像液の溶解温度を記憶し、該記憶されたデータに基づく制御信号に基づいて、上記基板保持部により保持された基板の回転数、現像液供給ノズル及び気体供給ノズルの移動速度、気体の吐出量及び気体の温度を制御する、ことを特徴とする。   According to a sixth aspect of the present invention, in the development processing apparatus according to the fourth or fifth aspect, the control means stores the dissolution temperature of the developer according to the type of resist on the substrate to be developed. Based on a control signal based on the stored data, the number of rotations of the substrate held by the substrate holding unit, the moving speed of the developer supply nozzle and the gas supply nozzle, the gas discharge amount, and the gas temperature are controlled. It is characterized by that.

（１）請求項１，２，４，５記載の発明によれば、基板の中心から外周方向に向かうように中心側に上記気体供給ノズルを外周方向側に上記現像液供給ノズルを配置して、鉛直軸回りに回転する基板の中心部上方から現像液供給ノズルより現像液を供給して液盛りすると同時に、現像液供給ノズルと気体供給ノズルとを基板の中心部から基板の外周縁に向かって径方向に移動させながら、更に現像液供給ノズルの移動方向の後方側に生じる現像液の裾部に向かって気体供給ノズルから処理時の基板の温度よりも高温の気体を供給して現像処理を行う、ことにより、液盛りされた現像液の裾部に基板の温度より高温の気体が供給されるので現像液が溶解して基板表面の回路パターンに均一に接触して現像処理が施される。 (1) According to the first, second, fourth, and fifth aspects of the present invention, the gas supply nozzle is disposed on the center side and the developer supply nozzle is disposed on the outer circumferential direction side from the center of the substrate toward the outer peripheral direction. The developer is supplied from the developer supply nozzle from above the central portion of the substrate rotating about the vertical axis to be accumulated, and at the same time, the developer supply nozzle and the gas supply nozzle are directed from the center of the substrate toward the outer periphery of the substrate. Then, a gas having a temperature higher than the temperature of the substrate at the time of processing is supplied from the gas supply nozzle toward the bottom of the developer generated on the rear side in the direction of movement of the developer supply nozzle while moving in the radial direction. As a result, a gas at a temperature higher than the temperature of the substrate is supplied to the bottom of the accumulated developer, so that the developer dissolves and uniformly contacts the circuit pattern on the surface of the substrate for development processing. The

（２）請求項３，６記載の発明によれば、現像処理を行う基板上のレジストの種類に応じて、基板保持部により保持された基板の回転数、現像液供給ノズル及び気体供給ノズルの移動速度、気体の吐出量及び気体の温度を制御することにより、上記（１）に加えて更に現像液を基板表面の回路パターンに均一に接触して現像処理を施すことができる。   (2) According to the third and sixth aspects of the invention, the number of rotations of the substrate held by the substrate holding unit, the developer supply nozzle, and the gas supply nozzle according to the type of resist on the substrate to be developed. By controlling the moving speed, the gas discharge amount, and the gas temperature, in addition to the above (1), the developing solution can be further uniformly contacted with the circuit pattern on the substrate surface for development.

この発明によれば、上記のように構成されているので、以下のような効果が得られる。   According to this invention, since it is configured as described above, the following effects can be obtained.

（１）請求項１，２，４，５記載の発明によれば、液盛りされた現像液の裾部に基板の温度より高温の気体を供給することで、現像液が溶解して基板表面の回路パターンに均一に接触して現像処理が施されるので、液盛りの袖部の現像液が活性化して現像処理効率の向上を図ることができる。   (1) According to the first, second, fourth, and fifth aspects of the invention, the developer is dissolved by supplying a gas at a temperature higher than the temperature of the substrate to the bottom of the accumulated developer, whereby the surface of the substrate is dissolved. Since the developing process is performed in contact with the circuit pattern uniformly, the developing solution on the sleeve portion of the liquid is activated and the development processing efficiency can be improved.

（２）請求項３，６記載の発明によれば、現像処理を行う基板上のレジストの種類に応じて、基板保持部により保持された基板の回転数、現像液供給ノズル及び気体供給ノズルの移動速度、気体の吐出量及び気体の温度を制御することにより、更に現像液を基板表面の回路パターンに均一に接触して現像処理を施すことができるので、上記（１）に加えて更に現像処理効率の向上を図ることができる。   (2) According to the third and sixth aspects of the invention, the number of rotations of the substrate held by the substrate holding unit, the developer supply nozzle, and the gas supply nozzle according to the type of resist on the substrate to be developed. By controlling the moving speed, the gas discharge amount, and the gas temperature, the developer can be further brought into contact with the circuit pattern on the substrate surface for further development processing. The processing efficiency can be improved.

この発明に係る現像処理装置を適用した塗布・現像処理装置に露光処理装置を接続した処理システムの全体を示す概略平面図である。1 is a schematic plan view showing an entire processing system in which an exposure processing apparatus is connected to a coating / development processing apparatus to which a development processing apparatus according to the present invention is applied. 上記処理システムの概略斜視図である。It is a schematic perspective view of the said processing system. この発明に係る現像処理装置を示す概略断面図である。1 is a schematic cross-sectional view showing a development processing apparatus according to the present invention. 上記現像処理装置の概略平面図である。It is a schematic plan view of the development processing apparatus. この発明における現像処理の状態を示す断面図（ａ）及び拡大断面図（ｂ）である。It is sectional drawing (a) and the expanded sectional view (b) which show the state of the image development processing in this invention. この発明における現像処理の状態を示す概略平面図である。It is a schematic plan view which shows the state of the development processing in this invention.

以下、この発明の最良の形態について、添付図面に基づいて説明する。ここでは、この発明に係る現像処理装置を塗布・現像処理装置に適用した場合について説明する。   The best mode of the present invention will be described below with reference to the accompanying drawings. Here, a case where the development processing apparatus according to the present invention is applied to a coating / development processing apparatus will be described.

上記処理システムは、図１及び図２に示すように、被処理基板である半導体ウエハＷ（以下にウエハＷという）を複数枚例えば２５枚密閉収納するキャリア１０を搬出入するためのキャリアステーション１と、このキャリアステーション１から取り出されたウエハＷにレジスト塗布，現像処理等を施す処理部２と、ウエハＷの表面に光を透過する液層を形成した状態でウエハＷの表面を液浸露光する露光部４と、処理部２と露光部４との間に接続されて、ウエハＷの受け渡しを行うインターフェース部３とを具備している。   As shown in FIGS. 1 and 2, the processing system includes a carrier station 1 for carrying in and out a carrier 10 for hermetically storing a plurality of, for example, 25 semiconductor wafers W (hereinafter referred to as wafers W) as substrates to be processed. Then, the wafer W taken out from the carrier station 1 is subjected to immersion exposure on the surface of the wafer W in a state where a processing unit 2 for applying resist, developing, etc. and a liquid layer transmitting light on the surface of the wafer W are formed. And an interface unit 3 that is connected between the processing unit 2 and the exposure unit 4 and transfers the wafer W.

キャリアステーション１は、キャリア１０を複数個並べて載置可能な載置部１１と、この載置部１１から見て前方の壁面に設けられる開閉部１２と、開閉部１２を介してキャリア１０からウエハＷを取り出すための受け渡し手段Ａ１とが設けられている。   The carrier station 1 includes a mounting unit 11 on which a plurality of carriers 10 can be placed side by side, an opening / closing unit 12 provided on a front wall as viewed from the mounting unit 11, and a wafer from the carrier 10 via the opening / closing unit 12. Delivery means A1 for taking out W is provided.

インターフェース部３は、処理部２と露光部４との間に前後に設けられる第１の搬送室３Ａ及び第２の搬送室３Ｂにて構成されており、それぞれに第１のウエハ搬送部３０Ａ及び第２のウエハ搬送部３０Ｂが設けられている。   The interface unit 3 includes a first transfer chamber 3A and a second transfer chamber 3B that are provided between the processing unit 2 and the exposure unit 4 in the front-rear direction, and includes a first wafer transfer unit 30A and a second transfer chamber 3B, respectively. A second wafer transfer unit 30B is provided.

また、キャリアステーション１の奥側には筐体２０にて周囲を囲まれる処理部２が接続されており、この処理部２には手前側から順に加熱・冷却系のユニットを多段化した棚ユニットＵ１，Ｕ２，Ｕ３及び液処理ユニットＵ４，Ｕ５の各ユニット間のウエハＷの受け渡しを行う主搬送手段Ａ２，Ａ３が交互に配列して設けられている。また、主搬送手段Ａ２，Ａ３は、キャリアステーション１から見て前後方向に配置される棚ユニットＵ１，Ｕ２，Ｕ３側の一面部と、後述する例えば右側の液処理ユニットＵ４，Ｕ５側の一面部と、左側の一面をなす背面部とで構成される区画壁２１により囲まれる空間内に配置されている。また、キャリアステーション１と処理部２との間、処理部２とインターフェース部３との間には、各ユニットで用いられる処理液の温度調節装置や温湿度調節用のダクト等を備えた温湿度調節ユニット２２が配置されている。   Further, a processing unit 2 surrounded by a housing 20 is connected to the back side of the carrier station 1, and the processing unit 2 is a shelf unit in which heating / cooling units are sequentially arranged from the front side. Main transfer means A2 and A3 for transferring the wafer W between the units U1, U2 and U3 and the liquid processing units U4 and U5 are alternately arranged. The main transport means A2 and A3 include one surface portion on the shelf unit U1, U2 and U3 side arranged in the front-rear direction when viewed from the carrier station 1, and one surface portion on the right liquid processing unit U4 and U5 side which will be described later. And a space surrounded by a partition wall 21 composed of a rear surface portion forming one surface on the left side. Further, between the carrier station 1 and the processing unit 2 and between the processing unit 2 and the interface unit 3, a temperature / humidity provided with a temperature control device for the processing liquid used in each unit, a duct for temperature / humidity control, and the like. An adjustment unit 22 is arranged.

棚ユニットＵ１，Ｕ２，Ｕ３は、液処理ユニットＵ４，Ｕ５にて行われる処理の前処理及び後処理を行うための各種ユニットを複数段例えば１０段に積層した構成とされており、その組み合わせはウエハＷを加熱（ベーク）する加熱ユニット（ＨＰ）、ウエハＷを冷却する冷却ユニット（ＣＰＬ）等が含まれる。また、液処理ユニットＵ４，Ｕ５は、例えば図２に示すように、レジストや現像液などの薬液収納部の上に反射防止膜を塗布するボトム反射防止膜塗布ユニット（ＢＣＴ）２３，塗布ユニット（ＣＯＴ）２４、ウエハＷに現像液を供給して現像処理する現像ユニット（ＤＥＶ）２５等を複数段例えば５段に積層して構成されている。この発明に係る現像処理装置５０は現像ユニット（ＤＥＶ）２５に設けられている。   The shelf units U1, U2, and U3 are configured such that various units for performing pre-processing and post-processing of the processing performed in the liquid processing units U4 and U5 are stacked in a plurality of stages, for example, 10 stages. A heating unit (HP) for heating (baking) the wafer W, a cooling unit (CPL) for cooling the wafer W, and the like are included. Further, as shown in FIG. 2, for example, the liquid processing units U4 and U5 include a bottom antireflection film coating unit (BCT) 23 for coating an antireflection film on a chemical solution storage unit such as a resist or a developer, and a coating unit ( COT) 24, a developing unit (DEV) 25 for supplying a developing solution to the wafer W and developing it, and the like are stacked in a plurality of stages, for example, five stages. The development processing apparatus 50 according to the present invention is provided in a development unit (DEV) 25.

上記現像処理装置５０は、図３及び図４に示すように、ウエハＷの搬入出口５１ａを有するケーシング５１内に、ウエハＷの裏面側中央部を吸引吸着して水平に保持する基板保持部をなすスピンチャック４０を具備している。なお、搬入出口５１ａにはシャッタ５１ｂが開閉可能に配設されている。   As shown in FIGS. 3 and 4, the development processing apparatus 50 includes a substrate holding portion that sucks and holds the center portion on the back side of the wafer W in a casing 51 having a carry-in / out port 51 a for the wafer W and holds it horizontally. A spin chuck 40 is provided. A shutter 51b is disposed at the loading / unloading port 51a so as to be openable and closable.

上記スピンチャック４０は軸部４１を介して例えばサーボモータ等の回転駆動機構４２に連結されており、この回転駆動機構４２によりウエハＷを保持した状態で回転可能に構成されている。なお、回転駆動機構４２は、制御手段であるコントローラ６０に電気的に接続されており、コントローラ６０からの制御信号に基づいてスピンチャック４０の回転数が制御されるようになっている。   The spin chuck 40 is connected to a rotation drive mechanism 42 such as a servo motor via a shaft 41, and is configured to be rotatable while the wafer W is held by the rotation drive mechanism 42. The rotation drive mechanism 42 is electrically connected to a controller 60 that is a control means, and the rotation speed of the spin chuck 40 is controlled based on a control signal from the controller 60.

また、スピンチャック４０に保持されたウエハＷの側方を囲むようにしてカップ４３が設けられている。このカップ４３は、円筒状の外カップ４３ａと、上部側が内側に傾斜した筒状の内カップ４３ｂとからなり、外カップ４３ａの下端部に接続された例えばシリンダ等の昇降機構４４により外カップ４３ａが昇降し、更に内カップ３２は外カップ４３ａの下端側内周面に形成された段部に押し上げられて昇降可能なように構成されている。なお、昇降機構４４はコントローラ６０に電気的に接続されており、コントローラ６０からの制御信号に基づいて外カップ４３ａが昇降するように構成されている。   A cup 43 is provided so as to surround the side of the wafer W held by the spin chuck 40. The cup 43 includes a cylindrical outer cup 43a and a cylindrical inner cup 43b whose upper side is inclined inward, and the outer cup 43a is connected to the lower end of the outer cup 43a by an elevating mechanism 44 such as a cylinder. The inner cup 32 is configured to be lifted and lowered by being pushed up by a step formed on the inner peripheral surface of the lower end side of the outer cup 43a. The elevating mechanism 44 is electrically connected to the controller 60, and is configured such that the outer cup 43a moves up and down based on a control signal from the controller 60.

また、スピンチャック４０の下方側には円形板４５が設けられており、この円形板４５の外側には断面が凹部状に形成された液受け部４６が全周に亘って設けられている。液受け部４６の底面にはドレイン排出口４７が形成されており、ウエハＷから零れ落ちるか、あるいは振り切られて液受け部４６に貯留された現像液やリンス液はこのドレイン排出口４７を介して装置の外部に排出される。また、円形板４５の外側には断面山形のリング部材４８が設けられている。なお、図示は省略するが、円形板４５を貫通する例えば３本の基板支持ピンである昇降ピンが設けられており、この昇降ピンと図示しない基板搬送手段との協働作用によりウエハＷはスピンチャック４０に受け渡しされるように構成されている。   A circular plate 45 is provided on the lower side of the spin chuck 40, and a liquid receiving portion 46 whose cross section is formed in a concave shape is provided around the entire circumference of the circular plate 45. A drain discharge port 47 is formed on the bottom surface of the liquid receiving part 46, and the developer and the rinse liquid stored in the liquid receiving part 46 after falling off from the wafer W or being shaken off are stored via the drain discharge port 47. Discharged outside the device. A ring member 48 having a mountain cross section is provided outside the circular plate 45. Although not shown, elevating pins that are, for example, three substrate support pins penetrating the circular plate 45 are provided, and the wafer W is spin chucked by the cooperative action of the elevating pins and a substrate transfer means (not shown). 40.

一方、スピンチャック４０に保持されたウエハＷの上方側には、ウエハＷの表面の中央部と隙間を介して対向するようにして、昇降及び水平移動可能な現像液供給ノズル５２（以下に現像ノズル５２という）と、この現像ノズル５２のウエハ中心側に並行に隣接する気体供給ノズルをなす窒素（Ｎ２）ガス供給ノズル５３（以下にＮ２ノズル５３という）が設けられている。   On the other hand, on the upper side of the wafer W held by the spin chuck 40, a developer supply nozzle 52 (hereinafter referred to as a developer) that can be moved up and down and horizontally so as to face the center of the surface of the wafer W through a gap. Nozzle 52) and a nitrogen (N2) gas supply nozzle 53 (hereinafter referred to as N2 nozzle 53) forming a gas supply nozzle adjacent in parallel to the wafer center side of the developing nozzle 52 are provided.

この場合、現像ノズル５２は、帯状に現像液を供給（吐出）するスリット状の吐出口（図示せず）を有している。この吐出口は、例えば、その長さ方向がウエハＷの中心部から外周部に向かうように配置されている。なお、吐出口は、ウエハＷの中心部から外周部に向かう直線（半径）に沿って伸びる場合だけでなく、この直線に対して僅かに角度をもたせて交差させてもよい。また、Ｎ２ノズル５３は、現像ノズル５２よりウエハＷ上に供給（吐出）された現像液Ｄの液盛りＤ１の裾部Ｄ２に向かってＮ２ガスを供給（噴射）するスリット状の吐出口（図示せず）を有している（図５（ａ）参照）。このＮ２ノズル５３の吐出口は、例えば、その長さ方向がウエハＷの中心部から外周部に向かうように配置されている。なお、Ｎ２ノズル５３の吐出口は、ウエハＷの中心部から外周部に向かう直線（半径）に沿って伸びる場合だけでなく、現像ノズル５２と共にこの直線に対して僅かに角度をもたせて交差させてもよい。なお、現像ノズル５２の吐出口は必ずしもスリット状である必要はなく、円形状の吐出口であってもよい。   In this case, the developing nozzle 52 has a slit-like discharge port (not shown) that supplies (discharges) the developer in a strip shape. For example, the discharge ports are arranged such that the length direction thereof extends from the central portion of the wafer W to the outer peripheral portion. In addition, the discharge port may cross not only when extending along a straight line (radius) from the center portion of the wafer W to the outer peripheral portion but also with a slight angle with respect to the straight line. Further, the N2 nozzle 53 is a slit-like discharge port for supplying (injecting) N2 gas toward the bottom D2 of the liquid D1 of the developer D supplied (discharged) onto the wafer W from the developing nozzle 52 (see FIG. (See FIG. 5A). For example, the discharge port of the N2 nozzle 53 is arranged so that the length direction thereof extends from the center portion of the wafer W to the outer peripheral portion. The discharge port of the N2 nozzle 53 not only extends along a straight line (radius) from the center of the wafer W to the outer periphery, but also intersects the straight line with the developing nozzle 52 with a slight angle. May be. It should be noted that the discharge port of the developing nozzle 52 does not necessarily have a slit shape, and may be a circular discharge port.

上記のように互いに隣接した状態で一体化される現像ノズル５２とＮ２ノズルは、ノズルアーム５４Ａの一端側に支持されており、このノズルアーム５４Ａの他端側は図示しない昇降機構を備えた移動基台５５Ａと連結されており、更に移動基台５５Ａは例えばボールねじやタイミングベルト等のノズル移動機構５６ＡにてＸ方向に伸びるガイド部材５７Ａに沿って横方向に移動可能なように構成されている。このように構成することにより、ノズル移動機構５６Ａを駆動することにより、現像ノズル５２とＮ２ノズル５３は、ウエハＷの中心部から外周部に向かう直線（半径）に沿って移動する。   As described above, the developing nozzle 52 and the N2 nozzle that are integrated in a state adjacent to each other are supported on one end side of the nozzle arm 54A, and the other end side of the nozzle arm 54A is provided with a lifting mechanism (not shown). The movable base 55A is connected to the base 55A, and is configured to be movable in the lateral direction along a guide member 57A extending in the X direction by a nozzle moving mechanism 56A such as a ball screw or a timing belt. Yes. With this configuration, by driving the nozzle moving mechanism 56A, the developing nozzle 52 and the N2 nozzle 53 move along a straight line (radius) from the center of the wafer W toward the outer periphery.

なお、カップ４３の一方の外方側には、現像ノズル５２の待機部５９Ａが設けられており、この待機部５９Ａで現像ノズル５２のノズル先端部の洗浄などが行われる。   Note that a standby portion 59A of the developing nozzle 52 is provided on one outer side of the cup 43, and the nozzle tip portion of the developing nozzle 52 is cleaned by this standby portion 59A.

また、スピンチャック４０に保持されたウエハＷの上方側には、ウエハＷの表面の中央部と隙間を介して対向するようにして、洗浄液であるリンス液例えば純水を供給（吐出）するリンスノズル５８が昇降及び水平移動可能に設けられている。   Further, a rinsing for supplying (discharging) a rinsing liquid as a cleaning liquid, for example, pure water, on the upper side of the wafer W held by the spin chuck 40 so as to face the central portion of the surface of the wafer W through a gap. A nozzle 58 is provided so as to be movable up and down and horizontally.

このリンスノズル５８は、ノズルアーム５４Ｂの一端側に互いに平行状態に保持されており、このノズルアーム５４Ｂの他端側は図示しない昇降機構を備えた移動基台５５Ｂと連結されており、更に移動基台５５Ｂは例えばボールねじやタイミングベルト等のノズル移動機構５６ＢにてＸ方向に伸びるガイド部材５７Ｂに沿って横方向に移動可能、すなわちウエハＷの中心部から基板の外周縁に向かって径方向に移動可能なように構成されている。なお、カップ４３の一方の外方側には、リンスノズル５８の待機部５９Ｂが設けられている。   The rinse nozzle 58 is held in parallel with each other on one end side of the nozzle arm 54B, and the other end side of the nozzle arm 54B is connected to a moving base 55B provided with a lifting mechanism (not shown). The base 55B can be moved laterally along a guide member 57B extending in the X direction by a nozzle moving mechanism 56B such as a ball screw or a timing belt, that is, radially from the center of the wafer W toward the outer peripheral edge of the substrate. It is configured to be movable. A standby portion 59B of the rinse nozzle 58 is provided on one outer side of the cup 43.

また、現像ノズル５２は、開閉弁Ｖ１を介設した現像液供給管７０を介して現像液供給源７１に接続されている。この場合、現像液供給管７０における現像ノズル５２側には、現像液が所定温度となるように温度調整する二重管７２ａと熱交換器７２ｂとからなる温度調整部７２が設けられている。一方、Ｎ２ノズル５３は、流量調整可能な制御弁Ｖ０を介設したＮ２ガス供給管７３を介してＮ２ガス供給源７４に接続されている。この場合、Ｎ２ガス供給管７３には、Ｎ２ガスを所定温度すなわち処理時のウエハＷの温度より高温例えば３０〜５０℃となるように温度調整するＮ２ガス温度調整部７５が設けられている。   The developing nozzle 52 is connected to a developing solution supply source 71 via a developing solution supply pipe 70 provided with an on-off valve V1. In this case, a temperature adjusting unit 72 including a double pipe 72a and a heat exchanger 72b for adjusting the temperature of the developer so as to reach a predetermined temperature is provided on the developing nozzle 52 side of the developer supply pipe 70. On the other hand, the N2 nozzle 53 is connected to an N2 gas supply source 74 via an N2 gas supply pipe 73 provided with a control valve V0 capable of adjusting the flow rate. In this case, the N2 gas supply pipe 73 is provided with an N2 gas temperature adjusting unit 75 that adjusts the temperature of the N2 gas so as to be higher than the predetermined temperature, that is, the temperature of the wafer W during processing, for example, 30 to 50 ° C.

また、リンスノズル５８は、リンスノズル５８と洗浄液供給源である純水供給源７７とを接続する純水供給管７６に開閉弁Ｖ２が介設されている。   The rinsing nozzle 58 is provided with an open / close valve V2 in a pure water supply pipe 76 that connects the rinsing nozzle 58 and a pure water supply source 77 that is a cleaning liquid supply source.

なお、上記ノズル移動機構５６Ａ，５６Ｂ、開閉弁Ｖ１，Ｖ２、制御弁Ｖ０、温度調整部７２及びＮ２ガス温度調整部７５は、それぞれ上記コントローラ６０に電気的に接続されており、コントローラ６０に予め記憶された制御信号に基づいて現像ノズル５２の水平移動、リンスノズル５８の水平移動、開閉弁Ｖ１，Ｖ２，制御弁Ｖ０の開閉駆動、現像液及びＮ２ガスの温度調整が行われるように構成されている。この場合、現像液の温度及びＮ２ガスの温度は、レジストの種類に応じて所定温度に設定される。すなわち、現像液及びＮ２ガスの温度は、現像液に対するレジストの種類毎の溶解特性に応じて現像液の温度が制御される。   The nozzle moving mechanisms 56A and 56B, the on-off valves V1 and V2, the control valve V0, the temperature adjusting unit 72, and the N2 gas temperature adjusting unit 75 are electrically connected to the controller 60, respectively. Based on the stored control signal, the developing nozzle 52 is horizontally moved, the rinsing nozzle 58 is horizontally moved, the on-off valves V1, V2 and the control valve V0 are opened / closed, and the temperature of the developer and N2 gas is adjusted. ing. In this case, the temperature of the developer and the temperature of the N2 gas are set to predetermined temperatures according to the type of resist. That is, the temperature of the developer and N2 gas is controlled according to the solubility characteristics of each type of resist in the developer.

ここで、レジストの種類に対応づけた現像液の温度設定値について一例を挙げると、例えばＫｒＦ光源用のレジストであって、例えば現像液に対して溶解性の低いレジスト種類の場合には現像液の温度設定値を高く例えば４０〜６０℃に設定する。また、例えばＡｒＦ光源用のレジストであって、例えば現像液に対して溶解性の高いレジスト種類の場合には現像液の温度設定値を低く例えば２０〜４０℃に設定する。更にまた、Ｉ線，Ｇ線などの光源用レジストのように、低温で溶解性が促進されるレジストの場合には温度設定値を例えば１０〜２０℃に設定する。また、ＥＵＶレジストの場合の現像液の温度設定値を１０〜３０℃に設定する。一方、Ｎ２ガスの温度は、上記現像液の温度と同じであって、処理時のウエハＷの温度より高温に設定する。   Here, as an example of the temperature setting value of the developer corresponding to the type of resist, for example, in the case of a resist for KrF light source, for example, a resist type having low solubility in the developer, the developer Is set to a high temperature, for example, 40 to 60 ° C. For example, in the case of a resist for ArF light source, for example, a resist type that is highly soluble in the developer, the temperature setting value of the developer is set low, for example, 20 to 40 ° C. Furthermore, in the case of a resist whose solubility is promoted at a low temperature, such as a resist for a light source such as I-line and G-line, the temperature set value is set to 10 to 20 ° C., for example. Further, the temperature setting value of the developer in the case of EUV resist is set to 10 to 30 ° C. On the other hand, the temperature of the N 2 gas is the same as the temperature of the developer, and is set higher than the temperature of the wafer W during processing.

次に、上記のように構成される現像処理装置５０の動作態様について説明する。まず、ノズル移動機構５６Ａを駆動して現像ノズル５２とＮ２ノズル５３をウエハ表面の中心部上方位置に移動し、図５及び図６に示すように、回転駆動機構４２の駆動によって低速例えば５０ｒｐｍで回転するウエハＷの表面に現像ノズル５２より現像液を供給（吐出）すると同時に、現像液の液盛りＤ１の裾部Ｄ２に向かって所定の温度に設定されたウエハＷの温度より高温のＮ２ガスを供給（噴射）した状態で、現像ノズル５２とＮ２ノズル５３をウエハＷの中心部から外周縁部に向かう直線（半径）に沿って移動して現像処理を行う。このように現像ノズル５２にＮ２ノズル５３を追随させて現像することにより、図５（ａ）に示すように、現像ノズル５２よりウエハＷの表面に供給（吐出）された現像液Ｄの液盛りＤ１のウエハ中心側の裾部Ｄ２にＮ２ノズル５３よりウエハＷより高温のＮ２ガスが供給（噴射）されるので、図５（ｂ）に示すように、裾部Ｄ２の少ない量の現像液が溶解されてウエハＷの表面に形成された回路パターンＰに均一に接触して現像処理が施される。   Next, an operation mode of the development processing apparatus 50 configured as described above will be described. First, the nozzle moving mechanism 56A is driven to move the developing nozzle 52 and the N2 nozzle 53 to a position above the center of the wafer surface. As shown in FIGS. The developer is supplied (discharged) from the developing nozzle 52 to the surface of the rotating wafer W, and at the same time, N2 gas having a temperature higher than the temperature of the wafer W set to a predetermined temperature toward the bottom D2 of the developer liquid D1. Is supplied (sprayed), the developing nozzle 52 and the N2 nozzle 53 are moved along a straight line (radius) from the center portion of the wafer W to the outer peripheral edge portion to perform development processing. By developing the N2 nozzle 53 following the developing nozzle 52 in this way, as shown in FIG. 5A, the liquid volume of the developer D supplied (discharged) to the surface of the wafer W from the developing nozzle 52 is obtained. Since N2 gas having a temperature higher than that of the wafer W is supplied (injected) from the N2 nozzle 53 to the skirt portion D2 on the wafer center side of D1, as shown in FIG. 5B, a small amount of developer in the skirt portion D2 is generated. The circuit pattern P that has been melted and formed on the surface of the wafer W is uniformly contacted and developed.

この現像処理後、ノズル移動機構５６Ｂを駆動してリンスノズル５８をウエハ表面の中心部上方位置に移動し、回転するウエハＷの表面にリンスノズル５８よりリンス液すなわち純水を供給（吐出）する。これによりリンスノズル５８より供給（吐出）された純水ＤＩＷによってウエハ表面のレジスト溶解成分を含む現像液が洗い流される。その後、回転駆動機構４２の駆動によりウエハＷを高速回転例えば回転数を２０００ｒｐｍにしてウエハ表面の液を振り切るスピン乾燥処理を行う。   After this development processing, the nozzle moving mechanism 56B is driven to move the rinse nozzle 58 to a position above the center of the wafer surface, and a rinse liquid, that is, pure water is supplied (discharged) from the rinse nozzle 58 onto the surface of the rotating wafer W. . As a result, the developer containing the resist dissolving component on the wafer surface is washed away by the pure water DIW supplied (discharged) from the rinse nozzle 58. Thereafter, the wafer W is rotated at a high speed by driving the rotation driving mechanism 42, for example, the rotation speed is set to 2000 rpm, and a spin drying process for shaking off the liquid on the wafer surface is performed.

次に、上記塗布・現像装置を用いてウエハＷを処理する手順について、図１及び図２を参照しながら簡単に説明する。ここでは、ウエハＷの表面にボトム反射防止膜（ＢＡＲＣ）を形成し、その上層にノントップコートレジストを塗布した場合について説明する。まず、例えば２５枚のウエハＷを収納したキャリア１０が載置部１１に載置されると、開閉部１２と共にキャリア１０の蓋体が外されて受け渡し手段Ａ１によりウエハＷが取り出される。そして、ウエハＷは棚ユニットＵ１の一段をなす受け渡しユニット（図示せず）を介して主搬送手段Ａ２へと受け渡され、塗布処理の前処理として例えばユニット（ＢＣＴ）２３にてその表面にボトム反射防止膜（ＢＡＲＣ）が形成される。その後、主搬送手段Ａ２により棚ユニットＵ１〜Ｕ３の一つの棚をなす加熱処理部に搬送されてプリベーク（ＣＬＨＰ）され、更に冷却された後、主搬送手段Ａ２によりウエハＷは塗布ユニット（ＣＯＴ）２４内に搬入され、ウエハＷの表面全体に薄膜状にノントップコートレジストが塗布される。その後、主搬送手段Ａ２により棚ユニットＵ１〜Ｕ３の一つの棚をなす加熱処理部に搬送されてプリベーク（ＣＬＨＰ）され、更に冷却された後、棚ユニットＵ３の受け渡しユニットを経由してインターフェース部３へ搬送される。このインターフェース部３において、第１の搬送室３Ａ及び第２の搬送室３Ｂの第１のウエハ搬送部３０Ａ及び第２のウエハ搬送部３０Ｂによって露光部４に搬送され、ウエハＷの表面に対向するように露光手段（図示せず）が配置されて露光が行われる。露光を終えたウエハＷは逆の経路で主搬送手段Ａ３まで搬送され、現像ユニット（ＤＥＶ）２５に搬入される。現像ユニット（ＤＥＶ）２５に搬入されたウエハＷは、現像処理装置５０によって、上述したように、ウエハＷの表面に現像ノズル５２より現像液を供給（吐出）すると同時に、現像液の液盛りＤ１の裾部Ｄ２に向かって所定の温度に設定されたウエハＷの温度より高温のＮ２ガスを供給（噴射）した状態で、現像ノズル５２に追随させてＮ２ノズル５３をウエハＷの中心部から外周縁部に向かう直線（半径）に沿って移動して現像処理を行った後、リンスノズル５８をウエハ表面の中心部上方位置に移動し、回転するウエハＷの表面にリンスノズル５８より純水を供給（吐出）して洗浄処理が施され、その後、ウエハＷを高速回転して乾燥する。   Next, a procedure for processing the wafer W using the coating / developing apparatus will be briefly described with reference to FIGS. Here, a case where a bottom antireflection film (BARC) is formed on the surface of the wafer W and a non-top coat resist is applied to the upper layer will be described. First, for example, when the carrier 10 containing 25 wafers W is placed on the placement unit 11, the lid of the carrier 10 is removed together with the opening / closing unit 12, and the wafer W is taken out by the delivery means A1. Then, the wafer W is delivered to the main transfer means A2 via a delivery unit (not shown) that forms one stage of the shelf unit U1, and is placed on the surface of the wafer W by a unit (BCT) 23 as a pretreatment of the coating treatment. An antireflection film (BARC) is formed. After that, the main transfer unit A2 transfers the wafer W to a heat treatment unit forming one shelf of the shelf units U1 to U3, pre-bake (CLHP), and after cooling, the main transfer unit A2 applies the wafer W to the coating unit (COT). Then, a non-top coat resist is applied to the entire surface of the wafer W in a thin film shape. After that, after being transported to the heat processing unit forming one shelf of the shelf units U1 to U3 by the main transport means A2, prebaked (CLHP), and further cooled, the interface unit 3 via the delivery unit of the shelf unit U3. It is conveyed to. In the interface unit 3, the first wafer transfer unit 30 </ b> A and the second wafer transfer unit 30 </ b> B of the first transfer chamber 3 </ b> A and the second transfer chamber 3 </ b> B are transferred to the exposure unit 4 and face the surface of the wafer W. Thus, exposure means (not shown) is arranged to perform exposure. After the exposure, the wafer W is transferred to the main transfer means A3 through the reverse path and is transferred into the developing unit (DEV) 25. The wafer W carried into the development unit (DEV) 25 is supplied (discharged) from the development nozzle 52 to the surface of the wafer W by the development processing device 50 as described above, and at the same time, the developer accumulation P1 In the state where N2 gas higher in temperature than the temperature of the wafer W set to a predetermined temperature is supplied (sprayed) toward the bottom portion D2, the N2 nozzle 53 is removed from the center of the wafer W by following the developing nozzle 52. After the development process is performed by moving along a straight line (radius) toward the peripheral edge, the rinse nozzle 58 is moved to a position above the center of the wafer surface, and pure water is supplied from the rinse nozzle 58 to the surface of the rotating wafer W. The wafer W is supplied (discharged) and subjected to a cleaning process, and then the wafer W is rotated at high speed and dried.

その後、ウエハＷは主搬送手段Ａ３により現像ユニット（ＤＥＶ）２５から搬出され、主搬送手段Ａ２、受け渡し手段Ａ１を経由して載置部１１上の元のキャリア１０へと戻されて一連の塗布・現像処理を終了する。   Thereafter, the wafer W is unloaded from the developing unit (DEV) 25 by the main transfer unit A3, and returned to the original carrier 10 on the mounting portion 11 via the main transfer unit A2 and the transfer unit A1, and a series of coating operations.・ End development processing.

なお、上記実施形態では、ウエハＷの表面にボトム反射防止膜（ＢＡＲＣ）を形成し、その表面にレジスト層を形成した場合について説明したが、ボトム反射防止膜（ＢＡＲＣ）なしの場合においても、上記実施形態と同様の効果が得られる。この場合の処理手順は、レジスト塗布工程→プリベーク工程→液浸露光工程→ポストエクスポージャーベーク工程→現像工程（現像処理→洗浄・乾燥処理）の順に処理される。   In the above embodiment, the case where the bottom antireflection film (BARC) is formed on the surface of the wafer W and the resist layer is formed on the surface has been described, but even in the case where the bottom antireflection film (BARC) is not provided, The same effect as the above embodiment can be obtained. The processing procedure in this case is processed in the order of resist coating process → pre-baking process → immersion exposure process → post-exposure baking process → developing process (developing process → cleaning / drying process).

Ｗ 半導体ウエハ（基板）
４０ スピンチャック（基板保持部）
４２ 回転駆動機構
５０ 現像処理装置
５２ 現像ノズル（現像液供給ノズル）
５３ Ｎ２ノズル（気体供給ノズル）
５６Ａ ノズル移動機構
６０ コントローラ（制御手段）
７５ Ｎ２ガス温度調整部
Ｖ０ 制御弁（弁機構）
Ｄ 現像液
Ｄ１ 液盛り
Ｄ２ 裾部 W Semiconductor wafer (substrate)
40 Spin chuck (substrate holder)
42 Rotation drive mechanism 50 Development processing device 52 Development nozzle (developer supply nozzle)
53 N2 nozzle (gas supply nozzle)
56A Nozzle moving mechanism 60 controller (control means)
75 N2 gas temperature regulator V0 Control valve (valve mechanism)
D Developer D1 Liquid D2 Bottom

Claims (6)

表面にレジストが塗布され、露光された後の基板の表面に現像液を供給して現像を行う現像処理方法において、
基板の中心から外周方向に向かうように中心側に気体供給ノズルを外周方向側に現像液供給ノズルを互いに隣接した状態で一体化して配置して、
基板を水平に保持した基板保持部を鉛直軸回りに回転させながら基板の中心部上方から上記現像液供給ノズルより現像液を供給して液盛りすると同時に、上記現像液供給ノズルと上記気体供給ノズルとを基板の中心部から基板の外周縁に向かって径方向に移動させながら、更に上記現像液供給ノズルの移動方向の後方側に生じる現像液の裾部に向かって上記気体供給ノズルから処理時の基板の温度よりも高温の気体を供給して現像処理を行う、ことを特徴とする現像処理方法。 In a development processing method in which a resist is applied to the surface and development is performed by supplying a developer to the surface of the substrate after exposure,
Arrange the gas supply nozzle on the center side so as to go from the center of the substrate to the outer peripheral direction and the developer supply nozzle on the outer peripheral direction side in an integrated state in a state adjacent to each other,
The developer supply nozzle and the gas supply nozzle are supplied at the same time as the developer is supplied from the developer supply nozzle from above the central portion of the substrate while rotating the substrate holding portion holding the substrate horizontally around the vertical axis. During the processing from the gas supply nozzle toward the bottom of the developer generated further in the rearward direction of the developer supply nozzle in the radial direction from the center of the substrate toward the outer peripheral edge of the substrate. A development processing method, wherein a development process is performed by supplying a gas having a temperature higher than that of the substrate . 請求項１記載の現像処理方法において、
上記気体が不活性ガスであることを特徴とする現像処理方法。 The development processing method according to claim 1,
A development processing method, wherein the gas is an inert gas. 請求項１又は２記載の現像処理方法において、
現像処理を行う基板上のレジストの種類に応じて、上記基板保持部により保持された基板の回転数、現像液供給ノズル及び気体供給ノズルの移動速度、気体の吐出量及び気体の温度を制御する、ことを特徴とする現像処理方法。 The development processing method according to claim 1 or 2,
The number of rotations of the substrate held by the substrate holding unit, the moving speed of the developer supply nozzle and the gas supply nozzle, the gas discharge amount, and the gas temperature are controlled according to the type of resist on the substrate to be developed. A development processing method characterized by the above. 表面にレジストが塗布され、露光された後の基板の表面に現像液を供給して現像を行う現像処理装置において、
基板を水平に保持する基板保持部と、
上記基板保持部を鉛直軸回りに回転させる回転駆動機構と、
上記基板保持部に保持された基板の表面に対して現像液を供給する現像液供給ノズルと、
上記現像液供給ノズルと互いに隣接した状態で一体化され、上記基板の表面に供給された現像液の液盛りの裾部に向かって気体を供給する気体供給ノズルと、
気体供給源から上記気体供給ノズルに供給される気体の温度を処理時の基板の温度より高温に調整する温度調整部と、
上記現像液供給ノズル及び気体供給ノズルを基板の中心から外周縁側に向かって移動する移動機構と、
上記気体供給源と気体供給ノズルとを接続する気体供給管路に介設される気体流量調整可能な弁機構と、
上記回転駆動機構、温度調整部、移動機構及び弁機構を制御する制御手段と、を具備し、
上記制御手段からの制御信号に基づいて、基板の中心から外周方向に向かうように中心側に上記気体供給ノズルを外周方向側に上記現像液供給ノズルを配置して、鉛直軸回りに回転する基板の中心部上方から上記現像液供給ノズルより現像液を供給して液盛りすると同時に、上記現像液供給ノズルと上記気体供給ノズルとを基板の中心部から基板の外周縁に向かって径方向に移動させながら、更に上記現像液供給ノズルの移動方向の後方側に生じる現像液の裾部に向かって上記気体供給ノズルから処理時の基板の温度よりも高温の気体を供給して現像処理を行う、ことを特徴とする現像処理装置。 In a development processing apparatus for developing by supplying a developer to the surface of the substrate after the resist is applied and exposed to the surface,
A substrate holder for horizontally holding the substrate;
A rotation drive mechanism for rotating the substrate holding unit around a vertical axis;
A developer supply nozzle for supplying a developer to the surface of the substrate held by the substrate holder;
A gas supply nozzle that is integrated with the developer supply nozzle adjacent to each other, and supplies gas toward the bottom of the liquid deposit of the developer supplied to the surface of the substrate;
A temperature adjusting unit for adjusting the temperature of the gas supplied from the gas supply source to the gas supply nozzle to be higher than the temperature of the substrate during processing;
A moving mechanism for moving the developer supply nozzle and the gas supply nozzle from the center of the substrate toward the outer peripheral edge;
A valve mechanism capable of adjusting a gas flow rate interposed in a gas supply line connecting the gas supply source and the gas supply nozzle;
A control means for controlling the rotational drive mechanism, the temperature adjusting unit, the moving mechanism, and the valve mechanism;
Based on the control signal from the control means, the gas supply nozzle is arranged on the center side and the developer supply nozzle is arranged on the outer peripheral direction side so as to go from the center of the substrate to the outer peripheral direction, and the substrate rotates about the vertical axis. center at the same time upward from the developer is supplied from the developer supply nozzle to puddling, move radially toward the outer peripheral edge of the substrate and the developer supply nozzle and the gas supply nozzle from the center portion of the substrate The developing process is further performed by supplying a gas having a temperature higher than the temperature of the substrate at the time of processing from the gas supply nozzle toward the bottom of the developing solution generated on the rear side in the moving direction of the developing solution supply nozzle. A development processing apparatus. 請求項４記載の現像処理装置において、
上記気体が不活性ガスであることを特徴とする現像処理装置。 The development processing apparatus according to claim 4.
A development processing apparatus, wherein the gas is an inert gas. 請求項４又は５記載の現像処理装置において、
上記制御手段は、現像処理を行う基板上のレジストの種類に応じた現像液の溶解温度を記憶し、該記憶されたデータに基づく制御信号に基づいて、上記基板保持部により保持された基板の回転数、現像液供給ノズル及び気体供給ノズルの移動速度、気体の吐出量及び気体の温度を制御する、ことを特徴とする現像処理装置。 The development processing apparatus according to claim 4 or 5,
The control means stores the dissolution temperature of the developer according to the type of resist on the substrate to be developed, and based on a control signal based on the stored data, the control unit stores the substrate held by the substrate holding unit. A development processing apparatus characterized by controlling a rotation speed, a moving speed of a developer supply nozzle and a gas supply nozzle, a gas discharge amount, and a gas temperature.
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JP6007925B2 (en) * 2013-05-28 2016-10-19 東京エレクトロン株式会社 Substrate cleaning apparatus, substrate cleaning method, and storage medium
JP6303968B2 (en) * 2014-10-10 2018-04-04 東京エレクトロン株式会社 Developing device, developing method, and storage medium
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JP3227595B2 (en) * 1996-08-20 2001-11-12 東京エレクトロン株式会社 Development processing method and development processing apparatus
JP4098908B2 (en) * 1999-01-29 2008-06-11 大日本スクリーン製造株式会社 Substrate processing apparatus and substrate processing method
JP3673704B2 (en) * 1999-07-28 2005-07-20 東京エレクトロン株式会社 Substrate processing apparatus and method
JP3554519B2 (en) * 2000-02-24 2004-08-18 東京エレクトロン株式会社 Development processing method and development processing apparatus
JP2003031475A (en) * 2001-07-16 2003-01-31 Dainippon Screen Mfg Co Ltd Development apparatus and method therefor
US7077585B2 (en) * 2002-07-22 2006-07-18 Yoshitake Ito Developing method and apparatus for performing development processing properly and a solution processing method enabling enhanced uniformity in the processing
JP2004349501A (en) * 2003-05-22 2004-12-09 Dainippon Screen Mfg Co Ltd Substrate processing method and substrate processing apparatus
WO2005055294A1 (en) * 2003-12-02 2005-06-16 Tokyo Electron Limited Developing method and developing apparatus
JP2006202893A (en) * 2005-01-19 2006-08-03 Toshiba Corp Developing method and developing apparatus
JP4318709B2 (en) * 2006-10-10 2009-08-26 東京エレクトロン株式会社 Development processing method and development processing apparatus
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