JPS61102034A - Method of developing photo-resist - Google Patents

Abstract

PURPOSE:To equalize the size of a pattern in a wafer surface by arranging a plurality of nozzles in the radial direction, separately controlling the temperature and quantity of a developer fed from the nozzles and rotatably applying the developer. CONSTITUTION:Several developer dropping nozzles 3 are mounted in the radial direction of a semiconductor substrate 2, and the temperature and flow rate of a developer fed from each nozzle are controlled independently. Accordingly, the developer dropped from respective nozzle flows on the surface of the substrate 2, and is mixed with a novel developer dropped from the next nozzle with a proceeding to the periphery, thus compensating a temperature change, then reducing the width of temperature distribution to one over several of conventional devices, provided that a pattern in uniform size is acquired in a substrate surface.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to spray development of a photoresist coated and selectively exposed on a semiconductor substrate in a semiconductor device manufacturing process.

[Conventional technology]

Conventionally, spin development of photoresist has been carried out by supplying a developing solution from an upper dripping nozzle onto the surface of a rotating semiconductor substrate that is attracted onto a chuck.

[Problem that the invention seeks to solve]

However, when developing quinonediazide-based photoresists, etc., where the development speed changes significantly depending on the developer temperature, if the initial developer temperature and the semiconductor substrate temperature are different, the center of the substrate will be Development is carried out at the temperature of the developer, but as the developer dropped in the center flows to the periphery, the temperature of the developer approaches the temperature of the semiconductor substrate due to the conduction of heat from the semiconductor substrate. However, there is a drawback that the development speed changes in the radial direction, resulting in variations in pattern dimensions within the substrate surface.

[Means for solving problems]

In order to eliminate the above-mentioned runner-up problem, the present invention provides a plurality of dripping nozzles in the radial direction on the semiconductor substrate, and independently controls the temperature and amount of the developer supplied by each nozzle.
The development speed is made constant within the plane of the semiconductor substrate.

That is, by using the developing method according to the present invention, there is an advantage that uniform pattern dimensions can be obtained within the plane of the semiconductor substrate.

〔Example〕

Next, the present invention will be explained with reference to the drawings. FIG. 3 shows a conventional spin development method, in which a developer supply nozzle 3 is located above the center of a semiconductor substrate 2 adsorbed on a film 1. ing. The dropped developer flows toward the outer periphery along the arrows according to the spin of the semiconductor substrate 2. At this time, the developing solution approaches the temperature T2 of the semiconductor substrate from the initial temperature T1 on both sides. FIG. 4 is a graph showing this temperature distribution. From this, it can be seen that the developer temperature is distributed within the surface of the semiconductor substrate 20 with a maximum width of IT, -T, l, and as a result, a significant difference in pattern size occurs between the center and the outer periphery.

FIG. 1 shows an example of spin development according to an embodiment of the present invention, in which, unlike the conventional case, a plurality of developer dripping nozzles 3 are installed in the radial direction of the semiconductor substrate 2, and the developer is supplied from each nozzle. As for the temperature and flow rate, the temperature and flow rate are controlled by iK. The developing solution sieved from each nozzle 3 is directed onto the surface of the semicircular substrate 2 according to the arrows. As it flows toward the periphery, it mixes with new developer dripped from the next nozzle, causing a change in temperature. FIG. 2 shows a graph of the temperature distribution at this time, and the temperature distribution can be suppressed to a fraction of that of the conventional method.

〔Effect of the invention〕

In this way, according to the present invention, a pattern with uniform dimensions can be obtained within the plane of the semiconductor substrate.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing a process according to an embodiment of the present invention, and FIG. 2 is a graph showing a temperature distribution according to this embodiment. The third figure is a sectional view showing the conventional example, and FIG. 4 is a graph showing the temperature distribution according to the conventional example. 1...Char, ri, 2...Semiconductor substrate,
3...Developer dripping nozzle, T1...Developer temperature of center nozzle, T2...Temperature of semiconductor substrate, r...Radius of semiconductor substrate J no Z Tsushi Figure 7 7! 7 r - Gakuson 4 note 1 (Center / Kari t distance height 1 Figure Z Figure 3 θ r - Semi-dorin grave handling medium 1 Iga t 3 /) Range Shin Diagram 4

Claims (1)

[Claims] Multiple developer supply nozzles in spin development method,
A photoresist characterized by making the pattern dimensions on a semiconductor substrate uniform within the wafer surface by individually controlling the temperature and amount of developer supplied from each nozzle arranged in the radial direction. Development method.