JP2674257B2 - Exposure and development equipment for photosensitive organic coatings - Google Patents

Exposure and development equipment for photosensitive organic coatings

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Publication number
JP2674257B2
JP2674257B2 JP2044950A JP4495090A JP2674257B2 JP 2674257 B2 JP2674257 B2 JP 2674257B2 JP 2044950 A JP2044950 A JP 2044950A JP 4495090 A JP4495090 A JP 4495090A JP 2674257 B2 JP2674257 B2 JP 2674257B2
Authority
JP
Japan
Prior art keywords
exposure
photosensitive organic
semiconductor substrate
wafer
storage unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2044950A
Other languages
Japanese (ja)
Other versions
JPH03246930A (en
Inventor
武夫 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
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Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2044950A priority Critical patent/JP2674257B2/en
Publication of JPH03246930A publication Critical patent/JPH03246930A/en
Application granted granted Critical
Publication of JP2674257B2 publication Critical patent/JP2674257B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は半導体装置の製造工程にて使用される感光性
有機被膜の露光現像装置に関する。The present invention relates to an exposure / developing apparatus for a photosensitive organic film used in the manufacturing process of a semiconductor device.

［従来の技術］ 半導体装置の製造工程においては、半導体基板上に感
光性有機被膜、所謂フォトレジスト膜を形成し、このフ
ォトレジスト膜を露光した後に現像してパターン形成す
ることにより、半導体基板上又は表面に所望の電極又は
素子領域等を形成している。このため、半導体装置の特
性及び製造歩留りを向上させるためには、フォトレジス
ト膜のパターン寸法の再現性を向上させることが極めて
重要である。[Prior Art] In a manufacturing process of a semiconductor device, a photosensitive organic film, that is, a so-called photoresist film is formed on a semiconductor substrate, and the photoresist film is exposed and then developed to form a pattern. Alternatively, a desired electrode or element region or the like is formed on the surface. Therefore, in order to improve the characteristics and manufacturing yield of the semiconductor device, it is extremely important to improve the reproducibility of the pattern dimension of the photoresist film.

従来、フォトレジスト膜の露光装置と現像装置とは別
々に設置されているため、この間を搬送する必要上、露
光から現像までの時間ｔがロット毎又はウェハ毎に異な
っている。しかしながら、半導体基板とフォトレジスト
膜との境界にて規定されるレジストパターンの寸法は、
例えば第３図に示すように、露光直後からの経過時間ｔ
に依存して経時的に変化してしまう。このため、時間ｔ
がt1乃至t3の範囲で異なると、パターン寸法の再現性が
低下してしまうという難点がある。Conventionally, since the exposure device and the development device for the photoresist film are separately installed, the time t from the exposure to the development is different for each lot or each wafer because it is necessary to convey between these devices. However, the dimension of the resist pattern defined by the boundary between the semiconductor substrate and the photoresist film is
For example, as shown in FIG. 3, the elapsed time t from immediately after exposure is t
Will change over time depending on. Therefore, time t
Is different in the range of t 1 to t 3 , there is a problem that the reproducibility of the pattern dimension is deteriorated.

近年、パターン寸法の再現性及び半導体装置の生産性
の向上を目的として、インライン方式により自動化した
半導体装置の製造ラインが導入されている。このインラ
イン方式においては、露光機と現像機との間を自動搬送
装置により直接連結しているため、フォトレジスト膜の
露光から現像までの時間ｔが常に一定に保たれている。In recent years, in order to improve the reproducibility of pattern dimensions and the productivity of semiconductor devices, an in-line automated semiconductor device manufacturing line has been introduced. In this in-line method, since the exposure machine and the developing machine are directly connected by an automatic transport device, the time t from the exposure of the photoresist film to the development is always kept constant.

［発明が解決しようとする課題］ しかしながら、従来の感光性有機被膜の露光現像装置
においては、露光から現像までの時間ｔは常に一定であ
るものの、その時間ｔがt1乃至t2の短い時間であるた
め、フォトレジスト膜の現像が常に第３図の領域Ｉで示
す範囲の時間内に行なわれている。この領域Ｉにおいて
は、露光によりレジスト膜の化学反応が進行しているた
め、時間ｔがt2よりも長い領域IIに比してレジストパタ
ーン寸法の変化が大きいので、時間ｔを一定にしてもウ
ェア面内におけるレジストパターンの寸法のバラツキが
大きくなってしまう。[Problems to be Solved by the Invention] However, in the conventional exposure and development apparatus for a photosensitive organic film, the time t from exposure to development is always constant, but the time t is a short time from t 1 to t 2 . Therefore, the development of the photoresist film is always carried out within the time range shown by the area I in FIG. In this region I, since the chemical reaction of the resist film is progressing by the exposure, the change of the resist pattern size is larger than that in the region II where the time t is longer than t 2. The dimensional variation of the resist pattern in the wear surface becomes large.

例えば、ノボラック樹脂及びナフトキノンジアジドス
ルホン酸エステルからなるポジ型フォトレジスト膜をシ
リコン基板上に形成した後にパターン形成する場合、領
域Ｉ及び領域IIでの1.0μｍパターンのバラツキは３σ
（σ；標準偏差）で夫々0.05μｍ及び0.025μｍとな
り、明らかに領域IIに比して領域Ｉでのパターン寸法の
再現性が劣っている。For example, when a positive photoresist film made of a novolac resin and naphthoquinone diazide sulfonate is formed on a silicon substrate and then patterned, the 1.0 μm variation in the regions I and II is 3σ.
(Σ; standard deviation) is 0.05 μm and 0.025 μm, respectively, and the reproducibility of the pattern dimension in the region I is clearly inferior to that in the region II.

このように、従来のインライン方式の露光現像装置を
使用した場合、異なるウェハ間におけるフォトレジスト
膜のパターン寸法の再現性は向上するものの、同一ウェ
ハ面内におけるパターン寸法の再現性が悪いという問題
点がある。As described above, when the conventional in-line type exposure and development apparatus is used, the reproducibility of the pattern dimension of the photoresist film between different wafers is improved, but the reproducibility of the pattern dimension within the same wafer surface is poor. There is.

本発明はかかる問題点に鑑みてなされたものであっ
て、同一半導体基板上における感光性有機被膜のパター
ン寸法の再現性をより一層向上させることができる感光
性有機被膜の露光現像装置を提供することを目的とす
る。The present invention has been made in view of the above problems, and provides an exposure / development apparatus for a photosensitive organic film capable of further improving the reproducibility of the pattern dimensions of the photosensitive organic film on the same semiconductor substrate. The purpose is to

［課題を解決するための手段］ 本発明に係る感光性有機被膜の露光現像装置は、その
表面上に感光性有機被膜が形成された半導体基板を選択
的に露光する露光部と、露光後の前記半導体基板を順次
装入し所定期間保管した後順次排出する保管部と、この
保管部から出た前記半導体基板を現像する現像部とを有
し、前記保管部は、選択的に露光された前記感光性有機
被膜のパターン寸法が安定するまでの所定期間前記半導
体基板を保管するものであることを特徴とする。[Means for Solving the Problems] An exposure / developing apparatus for a photosensitive organic film according to the present invention includes an exposure unit for selectively exposing a semiconductor substrate having a photosensitive organic film formed on the surface thereof, and an exposure unit after the exposure. The semiconductor substrate has a storage unit that is sequentially loaded, stored for a predetermined period of time, and then sequentially discharged, and a developing unit that develops the semiconductor substrate discharged from the storage unit. The storage unit is selectively exposed. The semiconductor substrate is stored for a predetermined period until the pattern size of the photosensitive organic coating becomes stable.

［作用］ 本発明においては、その表面上に感光性有機被膜が形
成された半導体基板を露光部において選択的に露光した
後に、前記半導体基板を保管部において所定期間保管す
る。この場合に、所定のパターン寸法に基づいて露光さ
れた前記感光性有機被膜は、露光後から前記所定期間が
経過すると、露光による化学反応が完了してパターン寸
法の変化が小さくなり、パターン寸法が安定する。そし
て、前記保管部から出た前記半導体基板を現像部にて現
像すると、前記半導体基板の全面において均一なパター
ン寸法の再現性を得ることができる。[Operation] In the present invention, after the semiconductor substrate having the photosensitive organic film formed on the surface thereof is selectively exposed in the exposure section, the semiconductor substrate is stored in the storage section for a predetermined period. In this case, the photosensitive organic coating exposed on the basis of the predetermined pattern dimension, when the predetermined period has elapsed after the exposure, the chemical reaction due to the exposure is completed and the change in the pattern dimension is reduced, and the pattern dimension is reduced. Stabilize. Then, when the semiconductor substrate that has come out of the storage unit is developed in the developing unit, it is possible to obtain uniform pattern dimension reproducibility over the entire surface of the semiconductor substrate.

［実施例］ 次に、本発明の実施例について添付の図面を参照して
説明する。Example Next, an example of the present invention will be described with reference to the accompanying drawings.

第１図（ａ）は本発明の第１の実施例に係る感光性有
機被膜の露光現像装置を示す模式的正面図、第１図
（ｂ）はその模式的平面図である。FIG. 1 (a) is a schematic front view showing an exposure / developing apparatus for a photosensitive organic film according to the first embodiment of the present invention, and FIG. 1 (b) is a schematic plan view thereof.

第１図（ａ）及び（ｂ）に示すように、露光機１の側
方には支持台８がその一端を露光機１の側面に隣接させ
て設置されていて、この支持台８上には保管ユニット
２、現像カップ部３及びホットプレート４が適長間隔を
おいて順次配設されており、支持台８の他端部にはアン
ロード部５が設けられている。As shown in FIGS. 1 (a) and 1 (b), a support base 8 is installed on the side of the exposure machine 1 with one end thereof being adjacent to the side surface of the exposure machine 1, and on the support base 8. The storage unit 2, the developing cup unit 3, and the hot plate 4 are sequentially arranged at appropriate intervals, and the unloading unit 5 is provided at the other end of the support base 8.

露光機１にはレジスト膜が塗布されたウェハが装入さ
れ、露光機１はこのウェハを所定のパターンで露光する
ようになっている。保管ユニット２は露光機１の側面に
密接するようにして支持台８上に設置され、その両側部
は支持台８からその幅方向両側に突出している。この保
管ユニット２内には、露光機１により露光された複数の
ウェハが保管されるようになっている。現像カップ部３
は、現像液を貯留するカップ3aを有していて、ウェハは
カップ3a内の現像液に浸漬されて現像される。ホットプ
レート４は、適宜の加熱源を有していて、これによりウ
ェハを加熱することができるようになっている。アンロ
ード部５は現像後のウェハを次工程に送り出すための部
分である。A wafer coated with a resist film is loaded in the exposure device 1, and the exposure device 1 exposes this wafer in a predetermined pattern. The storage unit 2 is installed on the support base 8 so as to be in close contact with the side surface of the exposure machine 1, and both side portions thereof project from the support base 8 to both sides in the width direction thereof. In this storage unit 2, a plurality of wafers exposed by the exposure device 1 are stored. Development cup part 3
Has a cup 3a for storing the developing solution, and the wafer is immersed in the developing solution in the cup 3a for development. The hot plate 4 has an appropriate heating source so that the wafer can be heated. The unload section 5 is a section for sending the developed wafer to the next step.

また、ウェハは上述の露光機１、保管ユニット２、現
像カップ部３、ホットプレート４及びアンロード部５の
相互間を搬送部６及び７により順次搬送されるようにな
っている。搬送部６は、支持台８上の保管ユニット２内
に設けられた搬送路6a及びこの搬送路6aに摺動可能に固
定された挾持部6bから構成されていて、ウェハは挾持部
6bにより挾持されて搬送路6aに沿って搬送される。搬送
部７は、支持台８の幅方向縁部に設けられた搬送路7a及
びこの搬送路7aに摺動可能に固定された挾持部7bから構
成されていて、ウェハは挾持部7bにより挾持されて搬送
路7aに沿って搬送される。Further, the wafer is sequentially transported by the transport units 6 and 7 among the above-described exposure machine 1, storage unit 2, developing cup unit 3, hot plate 4 and unloading unit 5. The transfer section 6 is composed of a transfer path 6a provided in the storage unit 2 on the support 8 and a holding section 6b slidably fixed to the transfer path 6a, and the wafer is held by the holding section.
It is held by 6b and conveyed along the conveying path 6a. The transfer section 7 is composed of a transfer path 7a provided on the widthwise edge of the support base 8 and a holding section 7b slidably fixed to the transfer path 7a, and the wafer is held by the holding section 7b. And is transported along the transport path 7a.

次に、このように構成された露光性有機被膜の露光現
像装置の動作について説明する。Next, the operation of the exposure / development apparatus for the light-exposed organic film thus configured will be described.

先ず、レジスト膜が塗布されたウェハを露光機１内に
装入し、露光機１により前記ウェハを所定のパターンで
露光する。First, a wafer coated with a resist film is loaded into the exposure device 1, and the exposure device 1 exposes the wafer in a predetermined pattern.

次に、搬送部６によりこのウェハを保管ユニット２内
に搬送して保管する。そして、この保管ユニット２内に
て前記ウェハを所定時間、例えば約３時間保持した後
に、前記ウェハを搬送部６及び７により搬送してカップ
3a内の現像液に浸漬することにより、前記ウェハを現像
する。Next, the wafer is transferred into the storage unit 2 by the transfer unit 6 and stored therein. Then, after holding the wafer in the storage unit 2 for a predetermined time, for example, about 3 hours, the wafer is transferred by the transfer units 6 and 7 to a cup.
The wafer is developed by immersing it in the developing solution in 3a.

次に、搬送部６により前記ウェハをホットプレート４
に搬送し、ホットプレート４によって前記ウェハを加熱
することにより前記レジスト膜をポストベークする。Next, the wafer is transferred to the hot plate 4 by the transfer unit 6.
Then, the resist film is post-baked by heating the wafer by the hot plate 4.

次いで、搬送部６により前記ウェハをアンロード部５
に搬送し、このアンロード部５から前記ウェハを次工程
に送り出す。Next, the wafer is unloaded by the carrier unit 6
Then, the wafer is sent from the unloading section 5 to the next step.

本実施例によれば、露光機１により露光されたウェハ
が保管ユニット２内に例えば約３時間保持されるので、
この期間にレジスト膜のパターン寸法の変化が小さくな
り、パターン寸法が安定する。即ち、この期間を設ける
ことにより、第３図に示すように、露光後現像までの時
間ｔを領域II内に設定することができる。従って、現像
カップ部３において前記ウェハを現像すると、全てのウ
ェハの全面においてパターン寸法の再現性を著しく向上
させることができる。According to the present embodiment, since the wafer exposed by the exposure device 1 is held in the storage unit 2 for about 3 hours,
During this period, the change in the pattern dimension of the resist film becomes small, and the pattern dimension becomes stable. That is, by providing this period, as shown in FIG. 3, the time t from the exposure to the development can be set within the region II. Therefore, if the wafer is developed in the developing cup unit 3, the reproducibility of the pattern size can be remarkably improved on the entire surfaces of all the wafers.

第２図は本発明の第２の実施例に係る感光性有機被膜
の露光現像装置を示す模式的正面図である。本実施例は
第１の実施例の保管ユニット２に調温調湿手段を設けた
ものであるので、第２図において第１図（ａ）及び
（ｂ）と同一物には同一符号を付してその部分の詳細な
説明は省略する。FIG. 2 is a schematic front view showing an exposure and development apparatus for a photosensitive organic film according to the second embodiment of the present invention. In this embodiment, the storage unit 2 of the first embodiment is provided with the temperature adjusting / humidifying means, and therefore, in FIG. 2, the same parts as those in FIGS. 1 (a) and 1 (b) are designated by the same reference numerals. The detailed description of that part is omitted.

第２図に示すように、保温ユニット２の周囲には温湿
度調節室９が設けられている。そして、保温ユニット２
の内部の温度及び湿度は温湿度調節室９により調整でき
るようになっている。As shown in FIG. 2, a temperature / humidity control chamber 9 is provided around the heat retention unit 2. And the heat retention unit 2
The temperature and humidity inside the container can be adjusted by the temperature / humidity control chamber 9.

従来、カップ3a内の現像液の温度を調整することによ
り、レジスト膜のパターン寸法の再現性を向上させてい
るが、このような現像液の温度調整だけではパターン寸
法の再現性が不十分である。しかしながら、本実施例に
おいては、現像液の温度調整に加えて、温湿度調節室９
を設けることによりウェハの温度及び湿度を調整するこ
とができるので、現像時のレジスト膜と現像液との化学
反応を十分に制御することができる。このため、レジス
ト膜のパターン寸法の再現性をより一層向上させること
ができる。Conventionally, the reproducibility of the pattern dimension of the resist film is improved by adjusting the temperature of the developing solution in the cup 3a, but the reproducibility of the pattern dimension is insufficient only by adjusting the temperature of the developing solution. is there. However, in this embodiment, in addition to the temperature adjustment of the developer, the temperature / humidity adjustment chamber 9
Since the temperature and humidity of the wafer can be adjusted by providing, the chemical reaction between the resist film and the developing solution during development can be sufficiently controlled. Therefore, the reproducibility of the pattern dimension of the resist film can be further improved.

［発明の効果］ 以上説明したように本発明によれば、その表面上に感
光性有機被膜が形成された半導体基板を露光部において
選択的に露光した後に、前記半導体基板を保管部におい
て所定期間保管するから、経時的変化による前記感光性
有機被膜のパターン寸法のバラツキを防止することがで
き、半導体基板の全面において感光性有機被膜のパター
ン寸法の再現性を著しく向上させることができる。従っ
て、半導体装置の特性及び製造歩留りをより一層向上さ
せることができる。[Effects of the Invention] As described above, according to the present invention, a semiconductor substrate having a photosensitive organic film formed on its surface is selectively exposed in an exposure unit, and then the semiconductor substrate is stored in a storage unit for a predetermined period of time. Since it is stored, it is possible to prevent variations in the pattern size of the photosensitive organic film due to changes over time, and it is possible to significantly improve the reproducibility of the pattern size of the photosensitive organic film over the entire surface of the semiconductor substrate. Therefore, the characteristics and manufacturing yield of the semiconductor device can be further improved.

【図面の簡単な説明】[Brief description of the drawings]

第１図（ａ）は本発明の第１の実施例に係る感光性有機
被膜の露光現像装置を示す模式的正面図、第１図（ｂ）
はその模式的平面図、第２図は本発明の第２の実施例に
係る感光性有機被膜の露光現像装置を示す模式的正面
図、第３図はレジスト膜のパターン寸法と露光後現像ま
での時間との関係を示すグラフ図である。 1;露光機、2;保管ユニット、3;現像カップ部、3a;カッ
プ、4;ホットプレート、5;アンロード部、6,7;搬送路、
6a,7a;搬送路、6b,7b;挾持部、8;支持台、9;温湿度調節
室FIG. 1 (a) is a schematic front view showing an exposure and development apparatus for a photosensitive organic film according to the first embodiment of the present invention, and FIG. 1 (b).
Is a schematic plan view thereof, FIG. 2 is a schematic front view showing an exposure and development apparatus for a photosensitive organic film according to a second embodiment of the present invention, and FIG. 3 is a pattern dimension of a resist film and post-exposure development. It is a graph which shows the relationship with the time of. 1; exposure machine, 2; storage unit, 3; development cup section, 3a; cup, 4; hot plate, 5; unload section, 6, 7; transport path,
6a, 7a; transport path, 6b, 7b; holding part, 8; support base, 9; temperature and humidity control room

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】その表面上に感光性有機被膜が形成された
半導体基板を選択的に露光する露光部と、露光後の前記
半導体基板を順次装入し所定期間保管した後順次排出す
る保管部と、この保管部から出た前記半導体基板を現像
する現像部とを有し、前記保管部は、選択的に露光され
た前記感光性有機被膜のパターン寸法が安定するまでの
所定期間前記半導体基板を保管するものであることを特
徴とする感光性有機被膜の露光現象装置。1. An exposure unit for selectively exposing a semiconductor substrate having a photosensitive organic film formed on its surface, and a storage unit for sequentially loading the exposed semiconductor substrate, storing it for a predetermined period, and then sequentially discharging it. And a developing unit for developing the semiconductor substrate out of the storage unit, the storage unit having the semiconductor substrate for a predetermined period until the pattern size of the selectively exposed photosensitive organic film is stabilized. An exposure phenomenon device for a photosensitive organic film, characterized in that
JP2044950A 1990-02-26 1990-02-26 Exposure and development equipment for photosensitive organic coatings Expired - Lifetime JP2674257B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2044950A JP2674257B2 (en) 1990-02-26 1990-02-26 Exposure and development equipment for photosensitive organic coatings

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2044950A JP2674257B2 (en) 1990-02-26 1990-02-26 Exposure and development equipment for photosensitive organic coatings

Publications (2)

Publication Number Publication Date
JPH03246930A JPH03246930A (en) 1991-11-05
JP2674257B2 true JP2674257B2 (en) 1997-11-12

Family

ID=12705768

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Application Number Title Priority Date Filing Date
JP2044950A Expired - Lifetime JP2674257B2 (en) 1990-02-26 1990-02-26 Exposure and development equipment for photosensitive organic coatings

Country Status (1)

Country Link
JP (1) JP2674257B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2559153B2 (en) * 1990-03-23 1996-12-04 リソテックジャパン株式会社 Developing method and apparatus
JP2776453B2 (en) * 1993-02-19 1998-07-16 日本ビクター株式会社 Photoresist developing apparatus and developing method
CN110928149B (en) * 2018-09-20 2024-04-19 长鑫存储技术有限公司 Control method and control system for critical dimension

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61210628A (en) * 1985-03-15 1986-09-18 Toshiba Corp Method and apparatus for continuous treatment of wafer
JPH03116819A (en) * 1989-09-29 1991-05-17 Hitachi Ltd Manufacture of semiconductor device and device therefor

Also Published As

Publication number Publication date
JPH03246930A (en) 1991-11-05

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