JPH03246930A - Aligner/developer for photosensitive organic coating film - Google Patents
Aligner/developer for photosensitive organic coating filmInfo
- Publication number
- JPH03246930A JPH03246930A JP2044950A JP4495090A JPH03246930A JP H03246930 A JPH03246930 A JP H03246930A JP 2044950 A JP2044950 A JP 2044950A JP 4495090 A JP4495090 A JP 4495090A JP H03246930 A JPH03246930 A JP H03246930A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- exposure
- photosensitive organic
- pattern
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011248 coating agent Substances 0.000 title abstract 3
- 238000000576 coating method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 25
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 naphthoquinonediazide sulfonic acid ester Chemical class 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は半導体装置の製造工程にて使用される感光性有
機被膜の露光現像装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an exposure and development apparatus for photosensitive organic films used in the manufacturing process of semiconductor devices.
［従来の技術］
半導体装置の製造工程においては、半導体基板上に感光
性有機被膜、所謂フォトレジスト膜を形成し、このフォ
トレジスト膜を露光した後に現像してパターン形成する
ことにより、半導体基板上又は表面に所望の電極又は素
子領域等を形成している。このため、半導体装置の特性
及び製造歩留りを向上させるためには、フォトレジスト
膜のノくターン寸法の再現性を向上させることが極めて
重要である。[Prior Art] In the manufacturing process of semiconductor devices, a photosensitive organic film, a so-called photoresist film, is formed on a semiconductor substrate, and this photoresist film is exposed to light and then developed to form a pattern. Alternatively, desired electrodes or element regions are formed on the surface. Therefore, in order to improve the characteristics and manufacturing yield of semiconductor devices, it is extremely important to improve the reproducibility of the notch dimensions of the photoresist film.
従来、フォトレジスト膜の露光装置と現像装置とは別々
に設置されているため、この間を搬送する必要上、露光
から現像までの時間ｔがロット毎又はウェハ毎に異なっ
ている。しかしながら、半導体基板とフォトレジスト膜
との境界酪こて規定されるレジストパターンの寸法は、
例えｉｆ第３図番と示すように、露光直後からの経過時
間ｔｓこ依存して経時的に変化してしまう。このため、
時間ｔがｔｌ乃至ｔ３の範囲で異なると、７寸ターン寸
法の再現性が低下してしまうとｔ）う難点カイある。Conventionally, an exposure device and a development device for a photoresist film are installed separately, and the time t from exposure to development differs from lot to lot or from wafer to wafer due to the necessity of transporting the photoresist film between them. However, the dimensions of the resist pattern defined by the boundary between the semiconductor substrate and the photoresist film are
For example, as shown by the number IF in the third figure, it changes over time depending on the elapsed time ts immediately after exposure. For this reason,
If the time t is different in the range of tl to t3, there is a problem that the reproducibility of the 7-inch turn dimension will be reduced.
近年、パターン寸法の再現性及び半導体装置の生産性の
向上を目的として、インライン方式により自動化した半
導体装置の製造ラインが導入されている。このインライ
ン方式におｃｚ ｚ ＠ｉ 、露光機と現像機との間を
自動搬送装置により直接連結しているため、フォトレジ
スト膜の露光から現像までの時間ｔが常に一定に保たれ
ている。In recent years, in-line automated semiconductor device manufacturing lines have been introduced for the purpose of improving pattern size reproducibility and semiconductor device productivity. In this in-line system, the exposure machine and the developing machine are directly connected by an automatic transport device, so that the time t from exposure to development of the photoresist film is always kept constant.
［発明が解決しようとする課題］
しかしながら、従来の感光性有機被膜の露光現像装置に
おいては、露光から現像までの時間ｔは常に一定である
ものの、その時間ｔがｔｌ乃至ｔ２の短い時間であるた
め、フォトレジスト膜の現像が常に第３図の領域工で示
す範囲の時間内に行なわれている。この領域工において
は、露光によりレジスト膜の化学反応が進行しているた
め、時間ｔがｔ２よりも長い領域■に比してレジストパ
ターン寸法の変化が大きいので、時間ｔを一定にしても
ウェハ面内におけるレジストパターンの寸法のバラツキ
が大きくなってしまう。[Problems to be Solved by the Invention] However, in conventional exposure and development devices for photosensitive organic films, although the time t from exposure to development is always constant, the time t is a short time from tl to t2. Therefore, the development of the photoresist film is always carried out within the time range shown by the area processing in FIG. In this region processing, the chemical reaction of the resist film is progressing due to exposure, so the change in resist pattern dimensions is large compared to region (2) where time t is longer than t2. This increases the variation in the dimensions of the resist pattern within the plane.
例えば、ノボラック樹脂及びナフトキノンジアジドスル
ホン酸エステルからなるポジ型フォトレジスト膜をシリ
コン基板上に形成した後にパターン形成する場合、領域
Ｉ及び領域■での１．０μｍパターンのバラツキは３σ
（σ；標準偏差）で夫々０．０５μｍ及び０．０２５μ
ｍとなり、明らかに領域■に比して領域Ｉでのパターン
寸法の再現性が劣っている。For example, when patterning is performed after forming a positive photoresist film made of novolac resin and naphthoquinonediazide sulfonic acid ester on a silicon substrate, the variation in the 1.0 μm pattern in region I and region II is 3σ.
(σ; standard deviation) is 0.05 μm and 0.025 μm, respectively.
m, and the reproducibility of pattern dimensions in area I is clearly inferior to area (3).
このように、従来のインライン方式の露光現像装置を使
用した場合、異なるウェハ間におけるフォトレジスト膜
のパターン寸法の再現性は向上するものの、同一ウェハ
面内におけるパターン寸法の再現性が悪いという問題点
がある。As described above, when using a conventional in-line type exposure and development device, although the reproducibility of the pattern dimensions of the photoresist film between different wafers is improved, the problem is that the reproducibility of the pattern dimensions within the same wafer is poor. There is.
本発明はかかる問題点に鑑みてなされたものであって、
同一半導体基板上における感光性有機被膜のパターン寸
法の再現性をより一層向上させることができる感光性有
機被膜の露光現像装置を提供することを目的とする。The present invention has been made in view of such problems, and includes:
An object of the present invention is to provide an exposure and development apparatus for a photosensitive organic film that can further improve the reproducibility of pattern dimensions of a photosensitive organic film on the same semiconductor substrate.
［課題を解決するための手段］
本発明に係る感光性有機被膜の露光現像装置は、その表
面上に感光性有機被膜が形成された半導体基板を選択的
に露光する露光部と、露光後の前記半導体基板を所定期
間保管する保管部と、この保管部から出た前記半導体基
板を現像する現像部とを有することを特徴とする。[Means for Solving the Problems] The exposure and development device for a photosensitive organic film according to the present invention includes an exposure section that selectively exposes a semiconductor substrate on which a photosensitive organic film is formed, and a The present invention is characterized by comprising a storage section for storing the semiconductor substrate for a predetermined period of time, and a developing section for developing the semiconductor substrate taken out from the storage section.
［作用］
本発明においては、その表面上に感光性有機被膜が形成
された半導体基板を露光部において選択的に露光した後
に、前記半導体基板を保管部において所定期間保管する
。この場合に、所定のパターン寸法に基づいて露光され
た前記感光性有機被膜は、露光後から前記所定期間が経
過すると、露光による化学反応が完了してパターン寸法
の変化が小さくなり、パターン寸法が安定する。そして
、前記保管部から出た前記半導体基板を現像部にて現像
すると、前記半導体基板の全面において均一なパターン
寸法の再現性を得ることができる。[Operation] In the present invention, after selectively exposing a semiconductor substrate having a photosensitive organic film formed on its surface in an exposure section, the semiconductor substrate is stored in a storage section for a predetermined period of time. In this case, in the photosensitive organic film that has been exposed to light based on a predetermined pattern dimension, when the predetermined period of time has elapsed after exposure, the chemical reaction due to exposure is completed and the change in pattern dimension becomes small, and the pattern dimension changes. Stabilize. When the semiconductor substrate taken out from the storage section is developed in the development section, it is possible to obtain uniform pattern size reproducibility over the entire surface of the semiconductor substrate.
［実施例コ
次に、本発明の実施例について添付の図面を参照して説
明する。[Embodiments] Next, embodiments of the present invention will be described with reference to the accompanying drawings.
第１図（ａ）は本発明の第１の実施例に係る感光性有機
被膜の露光現像装置を示す模式的正面図、第１図（ｂ）
はその模式的平面図である。FIG. 1(a) is a schematic front view showing an exposure and development apparatus for a photosensitive organic film according to the first embodiment of the present invention, and FIG. 1(b)
is a schematic plan view thereof.
第１図（ａ）及び（ｂ）に示すように、露光機１の側方
には支持台８がその一端を露光機１の側面に隣接させて
設置されていて、この支持台８上には保管ユニット２、
現像カップ部３及びホットプレート４が適長間隔をおい
て順次配設されており、支持台８の他端部にはアンロー
ド部５が設けられている。As shown in FIGS. 1(a) and (b), a support stand 8 is installed on the side of the exposure machine 1 with one end adjacent to the side of the exposure machine 1. is storage unit 2,
A developing cup section 3 and a hot plate 4 are sequentially arranged at appropriate length intervals, and an unloading section 5 is provided at the other end of the support table 8.
露光機１にはレジスト膜が塗布されたウェハが装入され
、露光機１はこのウェハを所定のパターンで露光するよ
うになっている。保管ユニット２は露光機１の側面に密
接するようにして支持台８上に設置され、その両側部は
支持台８からその幅方向両側に突出している。この保管
ユニット２内には、露光機１により露光された複数のウ
ェハが保管されるようになっている。現像カップ部３は
、現像液を貯留するカップ３ａを有していて、ウェハは
カップ３ａ内の現像液に浸漬されて現像される。ホット
プレート４は、適宜の加熱源を有していて、これにより
ウェハを加熱することができるようになっている。アン
ロード部５は現像後のウェハを次工程に送り出すための
部分である。A wafer coated with a resist film is loaded into the exposure machine 1, and the exposure machine 1 exposes this wafer in a predetermined pattern. The storage unit 2 is installed on the support stand 8 so as to be in close contact with the side surface of the exposure machine 1, and both sides of the storage unit 2 protrude from the support stand 8 on both sides in the width direction. In this storage unit 2, a plurality of wafers exposed by the exposure machine 1 are stored. The developing cup section 3 has a cup 3a that stores a developer, and the wafer is immersed in the developer in the cup 3a to be developed. The hot plate 4 has an appropriate heating source, and is capable of heating the wafer. The unloading section 5 is a section for sending the developed wafer to the next process.
また、ウェハは上述の露光機１、保管ユニット２、現像
カップ部３、ホットプレート４及びアンロード部５の相
互間を搬送部６及び７により順次搬送されるようになっ
ている。搬送部６は、支持台８上の保管ユニット２内に
設けられた搬送路６ａ及びこの搬送路６ａに摺動可能に
固定された挟持部６ｂから構成されていて、ウェハは挾
持部６ｂにより挾持されて搬送路６ａに沿って搬送され
る。搬送部７は、支持台８の幅方向縁部に設けられた搬
送路７ａ及びこの搬送路７ａに摺動可能に固定された挟
持部７ｂから構成されていて、ウェハは挟持部７ｂによ
り挟持されて搬送路７ａに沿って搬送される。Further, the wafer is sequentially transported between the above-mentioned exposure machine 1, storage unit 2, developing cup section 3, hot plate 4, and unloading section 5 by transport sections 6 and 7. The transport section 6 is composed of a transport path 6a provided in the storage unit 2 on the support stand 8 and a clamping part 6b slidably fixed to the transport path 6a, and the wafer is clamped by the clamping part 6b. and is transported along the transport path 6a. The transport section 7 is composed of a transport path 7a provided at the edge in the width direction of the support table 8, and a clamping part 7b slidably fixed to the transport path 7a, and the wafer is clamped by the clamping part 7b. and is transported along the transport path 7a.
次に、このように構成された感光性を機被膜の露光現像
装置の動作について説明する。Next, the operation of the photosensitive film exposure and development apparatus configured as described above will be explained.
先ず、レジスト膜が塗布されたウェハを露光機１内に装
入し、露光機１により前記ウェハを所定のパターンで露
光する。First, a wafer coated with a resist film is loaded into an exposure machine 1, and the wafer is exposed by the exposure machine 1 in a predetermined pattern.
次に、搬送部６によりこのウェハを保管ユニット２内に
搬送して保管する。そして、この保管ユニット２内にて
前記ウェハを所定時間、例えば約３時間保持した後に、
前記ウェハを搬送部６及び７により搬送してカップ３ａ
内の現像液に浸漬することにより、前記ウェハを現像す
る。Next, this wafer is transported into the storage unit 2 by the transport section 6 and stored. After holding the wafer in this storage unit 2 for a predetermined time, for example, about 3 hours,
The wafer is transferred by the transfer units 6 and 7 to the cup 3a.
The wafer is developed by immersing it in a developer solution.
次に、搬送部８により前記ウエノ−をホットプレート４
に搬送し、ホットプレート４によって前記ウェハを加熱
することにより前記レジスト膜をポストベークする。Next, the transfer unit 8 transfers the ueno to the hot plate 4.
The resist film is post-baked by heating the wafer with a hot plate 4.
次いで、搬送部６により前記ウェノ１をアンロード部５
に搬送し、このアンロード部５から前記ウェハを次工程
に送り出す。Next, the weno 1 is transferred to the unloading section 5 by the conveying section 6.
The wafer is transported to the next step from this unloading section 5.
本実施例によれば、露光機１により霧光されたウェハが
保管ユニット２内に例えば約３時間保持されるので、こ
の期間にレジスト膜のパターン寸法の変化が小さくなり
、パターン寸法が安定する。According to this embodiment, the wafer exposed to fog light by the exposure machine 1 is held in the storage unit 2 for, for example, about 3 hours, so that during this period, the change in pattern dimensions of the resist film becomes small and the pattern dimensions become stable. .
即ち、この期間を設けることにより、第８図に示すよう
に、露光後現像までの時間ｔを領域■内に設定すること
ができる。従って、現像カップ部３において前記ウェハ
を現像すると、全てのウエノ１の全面においてパターン
寸法の再現性を著しく向上させることができる。That is, by providing this period, the time t from exposure to development can be set within the region (2), as shown in FIG. Therefore, when the wafer is developed in the developing cup section 3, the reproducibility of pattern dimensions can be significantly improved over the entire surface of the wafer 1.
第２図は本発明の第２の実施例に係る感光性有機被膜の
露光現像装置を示す模式的正面図である。FIG. 2 is a schematic front view showing an exposure and development apparatus for a photosensitive organic film according to a second embodiment of the present invention.
本実施例は第１の実施例の保管ユニット２に調温調湿手
段を設けたものであるので、第２図において第１図（ａ
）及び（ｂ）と同一物には同一符号を付してその部分の
詳細な説明は省略する。In this embodiment, a temperature and humidity control means is provided in the storage unit 2 of the first embodiment, so in FIG.
) and (b) are given the same reference numerals, and detailed explanations of those parts will be omitted.
第２図に示すように、保温ユニット２の周囲には温湿度
調節室９が設けられている。そして、保温ユニット２の
内部の温度及び湿度は温湿度調節室９により調整できる
ようになっている。As shown in FIG. 2, a temperature and humidity adjustment chamber 9 is provided around the heat retention unit 2. The temperature and humidity inside the heat retention unit 2 can be adjusted by a temperature/humidity adjustment chamber 9.
従来、カップ３ａ内の現像液の温度を調整することによ
り、レジスト膜のパターン寸法の再現性を向上させてい
るが、このような現像液の温度調整だけではパターン寸
法の再現性が不十分である。Conventionally, the reproducibility of the pattern dimensions of the resist film has been improved by adjusting the temperature of the developer in the cup 3a, but the reproducibility of the pattern dimensions is insufficient just by adjusting the temperature of the developer in this way. be.
しかしながら、本実施例においては、現像液の温度調整
に加えて、温湿度調節室９を設けることによりウェハの
温度及び湿度を調整することができるので、現像時のレ
ジスト膜と現像液との化学反応を十分に制御することが
できる。このため、レジスト膜のパターン寸法の再現性
をより一層向上させることができる。However, in this embodiment, in addition to adjusting the temperature of the developer, the temperature and humidity of the wafer can be adjusted by providing a temperature/humidity control chamber 9, so that the chemistry between the resist film and the developer during development can be adjusted. The reaction can be well controlled. Therefore, the reproducibility of the pattern dimensions of the resist film can be further improved.
［発明の効果コ
以上説明したように本発明によれば、その表面上に感光
性有機被膜が形成された半導体基板を露光部において選
択的に露光した後に、前記半導体基板を保管部において
所定期間保管するから、経時的変化による前記感光性有
機被膜のパターン寸法のバラツキを防止することができ
、半導体基板の全面において感光性有機被膜のパターン
寸法の再現性を著しく向上させることができる。従って
、半導体装置の特性及び製造歩留りをより一層向上させ
ることができる。[Effects of the Invention] As explained above, according to the present invention, after selectively exposing a semiconductor substrate on the surface of which a photosensitive organic film is formed in an exposure section, the semiconductor substrate is kept in a storage section for a predetermined period of time. Since it is stored, it is possible to prevent variations in the pattern dimensions of the photosensitive organic film due to changes over time, and it is possible to significantly improve the reproducibility of the pattern dimensions of the photosensitive organic film over the entire surface of the semiconductor substrate. Therefore, the characteristics and manufacturing yield of the semiconductor device can be further improved.
第１図（ａ）は本発明の第１の実施例に係る感光性有機
被膜の露光現像装置を示す模式的正面図、第１図（ｂ）
はその模式的平面図、第２図は本発明の第２の実施例に
係る感光性有機被膜の露光現像装置を示す模式的正面図
、第３図はレジスト膜のパターン寸法と露光後現像まで
の時間との関係を示すグラフ図である。
１；露光機、２；保管ユニット、３；現像カップ部、３
ａ；カップ、４；ホットプレート、５；アンロード部、
６，７；搬送路、８ａ、７ａ；搬送路、８ｂ、７ｂ；挾
持部、８；支持台、９；温湿度調節室FIG. 1(a) is a schematic front view showing an exposure and development apparatus for a photosensitive organic film according to the first embodiment of the present invention, and FIG. 1(b)
is a schematic plan view thereof, FIG. 2 is a schematic front view showing an exposure and development apparatus for a photosensitive organic film according to a second embodiment of the present invention, and FIG. 3 is a diagram showing pattern dimensions of a resist film and development after exposure. It is a graph diagram showing the relationship between time and time. 1; Exposure machine, 2; Storage unit, 3; Developing cup section, 3
a; cup; 4; hot plate; 5; unloading section;
6, 7; Conveyance path, 8a, 7a; Conveyance path, 8b, 7b; Holding portion, 8; Support stand, 9; Temperature and humidity adjustment chamber
Claims (1)
基板を選択的に露光する露光部と、露光後の前記半導体
基板を所定期間保管する保管部と、この保管部から出た
前記半導体基板を現像する現像部とを有することを特徴
とする感光性有機被膜の露光現像装置。(1) An exposure section that selectively exposes a semiconductor substrate on whose surface a photosensitive organic film is formed, a storage section that stores the semiconductor substrate after exposure for a predetermined period, and the semiconductor that comes out of the storage section. 1. An exposure and development device for a photosensitive organic film, comprising a developing section for developing a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2044950A JP2674257B2 (en) | 1990-02-26 | 1990-02-26 | Exposure and development equipment for photosensitive organic coatings |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2044950A JP2674257B2 (en) | 1990-02-26 | 1990-02-26 | Exposure and development equipment for photosensitive organic coatings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03246930A true JPH03246930A (en) | 1991-11-05 |
| JP2674257B2 JP2674257B2 (en) | 1997-11-12 |
Family
ID=12705768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2044950A Expired - Lifetime JP2674257B2 (en) | 1990-02-26 | 1990-02-26 | Exposure and development equipment for photosensitive organic coatings |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2674257B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03274057A (en) * | 1990-03-23 | 1991-12-05 | General Signal Japan Kk | Developing method and device |
| JPH06243514A (en) * | 1993-02-19 | 1994-09-02 | Victor Co Of Japan Ltd | Photoresist developing device and developing method |
| CN110928149A (en) * | 2018-09-20 | 2020-03-27 | 长鑫存储技术有限公司 | Control method and control system for critical dimension |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210628A (en) * | 1985-03-15 | 1986-09-18 | Toshiba Corp | Method and apparatus for continuous treatment of wafer |
| JPH03116819A (en) * | 1989-09-29 | 1991-05-17 | Hitachi Ltd | Manufacture of semiconductor device and device therefor |
-
1990
- 1990-02-26 JP JP2044950A patent/JP2674257B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61210628A (en) * | 1985-03-15 | 1986-09-18 | Toshiba Corp | Method and apparatus for continuous treatment of wafer |
| JPH03116819A (en) * | 1989-09-29 | 1991-05-17 | Hitachi Ltd | Manufacture of semiconductor device and device therefor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03274057A (en) * | 1990-03-23 | 1991-12-05 | General Signal Japan Kk | Developing method and device |
| JPH06243514A (en) * | 1993-02-19 | 1994-09-02 | Victor Co Of Japan Ltd | Photoresist developing device and developing method |
| CN110928149A (en) * | 2018-09-20 | 2020-03-27 | 长鑫存储技术有限公司 | Control method and control system for critical dimension |
| CN110928149B (en) * | 2018-09-20 | 2024-04-19 | 长鑫存储技术有限公司 | Control method and control system for critical dimension |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2674257B2 (en) | 1997-11-12 |
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