JP2000133587A - Image pickup device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an image pickup device for operating uniform developing processing. SOLUTION: A developer feeding nozzle 42 is divided into plural areas 62a-62e. Then developer to be ejected from ejection ports 61 of each areas 62a-62e can be decreased accordingly, as it nears to the neighborhood of the center of rotation of a wafer W. Thus, the developing processing can be made uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing device for performing a developing process on an object such as a semiconductor wafer.

[0002]

2. Description of the Related Art For example, in a photoresist processing step in a semiconductor manufacturing process, a semiconductor wafer (hereinafter, referred to as a semiconductor wafer) is used.
A resist solution is applied to the surface of a substrate such as a "wafer" to form a resist film, and is exposed to a predetermined pattern and then developed with a developing solution. Conventionally, a developing device has been used to execute such a developing process.

In general, a developing device includes a spin chuck for holding and rotating a wafer by suction, and a developer supply nozzle movable to a predetermined position above the spin chuck. The developer supply nozzle has a so-called header-like configuration having a length longer than the diameter of the wafer, and discharge ports are formed on the lower surface of the developer supply nozzle in a state of being aligned in a line.

In order to supply a developing solution onto a wafer using such a developing solution supply nozzle, first, the developing solution is supplied to a predetermined position above the wafer held by the spin chuck, that is, a position overlapping with the diameter of the wafer. Move the nozzle. Next, the developer is supplied to the developer supply nozzle, and while the developer is discharged from the discharge port to the wafer, the wafer is rotated by 以上 or more to uniformly supply the developer over the entire wafer surface.

[0005]

However, in such a conventional developing device, almost pure developing solution that has not progressed is continuously supplied to the vicinity of the center of the wafer. There is a problem that the developing process varies because an increased amount of the developing solution flowing into the discharged pure developing solution from the center of the wafer is mixed. That is, since the development process does not progress toward the outer periphery of the wafer, the line width tends to be narrow near the center of the wafer and thick near the wafer edge.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and has as its object to provide a developing apparatus capable of performing a uniform developing process.

[0007]

According to a first aspect of the present invention, there is provided a developing apparatus according to the present invention, wherein discharge ports for discharging a developing solution are arranged in a row on a surface of a rotating object to be processed. A developing device having a nozzle, wherein the nozzle is divided into a plurality of areas, and a small amount of development is performed from a discharge port of an area corresponding to a vicinity of a rotation center of the processing target in each area as compared with other areas. The liquid is discharged.

[0008] The developing device of the present invention according to claim 2 is
A means for rotating while holding the object to be processed, a discharge port for discharging a developer on the surface of the object to be held and rotated, and a nozzle divided into a plurality of areas; Means for controlling the discharge amount of the developer so that a smaller amount of the developer is discharged from the discharge port of the area corresponding to the vicinity of the rotation center of the object to be processed as compared with other areas. .

According to a third aspect of the present invention, there is provided a developing device comprising:
3. The developing device according to claim 1, wherein said areas are arranged so as to be substantially symmetric with respect to a rotation center of said object.

According to a fourth aspect of the present invention, there is provided a developing device comprising:
4. The developing device according to claim 1, wherein the amount of the developer discharged from the area decreases as the position approaches the rotation center of the object to be processed. 5. .

According to a fifth aspect of the present invention, there is provided a developing device comprising:
The developing device according to any one of claims 1 to 4, wherein a part between the adjacent areas partially overlaps in a rotation direction of the substrate to be processed.

According to a sixth aspect of the present invention, there is provided the developing device,
The developing device according to any one of claims 1 to 5, wherein heights between the areas are different.

According to a seventh aspect of the present invention, there is provided the developing device according to the first aspect.
A developing device having a nozzle in which discharge ports for discharging a developing solution are arranged in a row on a surface of an object to be rotated, wherein the nozzle is divided into a plurality of areas, and is discharged from a discharge port of each area. The means for controlling the discharge amount of the developing solution is provided integrally with the nozzle.

The developing device of the present invention according to claim 8 is:
Means for rotating while holding the object to be processed, nozzles arranged in a row of discharge ports for discharging a developer on the surface of the object to be held and rotated, and a nozzle divided into a plurality of areas; Means for controlling the amount of developer discharged from the discharge port of each area.

According to a ninth aspect of the present invention, there is provided the developing device according to the first aspect.
9. The developing device according to claim 7, wherein a discharge time of the developer discharged from the area is shorter as approaching a vicinity of a rotation center of the object.

According to a tenth aspect of the present invention, there is provided the developing device according to any one of the seventh to ninth aspects, wherein the means for controlling the discharge amount of the developer is air. It is an operating valve or a solenoid valve.

According to the eleventh aspect of the present invention, there is provided the developing apparatus, wherein a means for rotating the object to be processed and a discharge port for discharging the developing solution are arranged in a row on the surface of the object to be held and rotated. And, a nozzle divided into a plurality of areas, an area corresponding to the vicinity of the outer periphery of the object to be processed and another area are separately provided, and the discharge amount of the developer discharged from the discharge port of each area is set. Control means.

According to a twelfth aspect of the present invention, there is provided the developing device according to the eleventh aspect, wherein the discharge time of the developer discharged from the area corresponding to the vicinity of the outer periphery is:
It is characterized in that it is longer than the discharge time of the developer discharged from other areas.

According to a thirteenth aspect of the present invention, in the developing device according to the eleventh or twelfth aspect, the concentration of the developing solution discharged from an area corresponding to the vicinity of the outer periphery is changed from another area. It is characterized in that the concentration is higher than the concentration of the discharged developer.

According to a fourteenth aspect of the present invention, there is provided the developing device according to any one of the eleventh to thirteenth aspects, wherein the developing solution is discharged from an area corresponding to the vicinity of the outer periphery. Is higher than the temperature of the developer discharged from the other area.

A developing device according to a fifteenth aspect of the present invention is the developing device according to any one of the eleventh to fourteenth aspects, wherein the rotation of the object to be processed among the plurality of areas is performed. A discharge port formed in an area corresponding to the vicinity of the center is formed in such a size that a small amount of developer is discharged toward the rotation center in the area.

According to the first and second aspects of the present invention, the nozzle is divided into a plurality of areas, and the area of the nozzle corresponding to the area near the center of rotation of the object to be processed is compared with the other areas. The ratio of the pure developer supplied near the rotation center of the object to be processed and the ratio of the pure developer supplied to the outer periphery of the object to be processed are configured so that a small amount of the developer is discharged. Almost coincides with each other, and variations in the development processing are reduced.

According to the third aspect of the present invention, since the areas are arranged so as to be substantially symmetrical with respect to the rotation center of the object, the object can be processed by rotating at least one half of the object. The developer can be supplied to the entire surface of the body and can be supplied uniformly in the rotation direction.

According to the fourth aspect of the present invention, since the developing solution discharged from the area is configured to approach the vicinity of the rotation center of the object and thus to be small in amount, the developer is discharged near the rotation center of the object. The ratio of the supplied pure developing solution and the ratio of the pure developing solution supplied to the outer periphery of the object to be processed are more accurately matched, and the variation in the developing process is further reduced.

According to a fifth aspect of the present invention, there is provided a developing device comprising:
Since the adjacent areas partially overlap with each other in the rotation direction, it is possible to eliminate the "blank" portion of the discharge port generated between the adjacent areas.

In the present invention according to claim 6, since the heights between the areas are different from each other, the timing at which the developer reaches the object to be processed corresponding to each area and the liquid at the time of collision may be obtained. The pressure can be controlled, and the development processing can be made uniform.

According to the present invention, the nozzle is divided into a plurality of areas, and the means for controlling the discharge amount of the developer discharged from the discharge port of each area is integrated with the nozzle. Since it is provided, the discharge time and discharge amount of the developer discharged from each area can be controlled more accurately.
Further, the number of pipes for sending the developer to the nozzle can be reduced.

According to the ninth aspect of the present invention, since the discharge time of the developing solution discharged from the area becomes shorter as approaching the vicinity of the rotation center of the object, the pure liquid supplied near the rotation center of the object is processed. The ratio of the proper developing solution and the ratio of the pure developing solution supplied to the outer periphery of the object to be processed almost coincide with each other, and variations in the developing process are reduced.

According to the tenth aspect of the present invention, since the means for controlling the discharge amount of the developer is an air operating valve or an electromagnetic valve, the on / off of the discharge of the developer can be switched with high sensitivity. The discharge time and discharge amount of the developer discharged from the area can be controlled more accurately.

According to the eleventh aspect of the present invention, the area corresponding to the vicinity of the outer periphery of the object to be processed and the other area are separately provided, and the discharge amount of the developer discharged from the discharge port of each area is controlled. Therefore, it is possible to control the ratio of the pure developer supplied near the rotation center of the object to be processed to be substantially equal to the ratio of the pure developer supplied to the outer periphery of the object. Thus, variations in the development processing are reduced.

In the twelfth aspect of the present invention, the discharge time of the developer discharged from the area corresponding to the vicinity of the outer periphery of the object is longer than the discharge time of the developer discharged from the other areas. Therefore, the ratio of the pure developer supplied near the rotation center of the object to be processed and the ratio of the pure developer supplied to the outer periphery of the object become almost the same, and the variation in the developing process is reduced. .

According to the thirteenth aspect of the present invention, since the concentration of the developing solution discharged from the area corresponding to the vicinity of the outer periphery of the object to be processed is higher than the concentration of the developing solution discharged from other areas, The developing speed in the vicinity of the outer periphery of the processing body can be increased, and variation in the developing process can be reduced.

In the developing device according to the present invention, the temperature of the developer discharged from the area corresponding to the vicinity of the outer periphery of the object to be processed is higher than the temperature of the developer discharged from the other areas. Therefore, the developing speed near the outer periphery of the object to be processed can be increased, and the variation in the developing process can be reduced.

According to the present invention, the discharge port formed in the area corresponding to the vicinity of the rotation center of the object discharges a smaller amount of the developing solution toward the rotation center in the area. It is formed in size. Therefore, the ratio of the pure developer near the center and the vicinity of the outer periphery in the area near the rotation center can be equalized, and the variation in the development processing in the area can be reduced.

[0035]

Embodiments of the present invention will be described below with reference to the drawings. 1 is a plan view of a coating and developing apparatus according to an embodiment of the present invention, FIG. 2 is a front view of the coating and developing apparatus shown in FIG. 1, and FIG. 3 is a rear view of the coating and developing system shown in FIG. is there.

As shown in FIGS. 1 to 3, the coating and developing apparatus 1 has a configuration in which a cassette station 10, a processing station 11, and an interface section 12 are integrally connected. At the cassette station 10,
A plurality of wafers W are loaded into the coating and developing apparatus 1 from the outside in units of cassettes C, for example, in units of 25 wafers, and unloaded from the coating and developing apparatus 1 to the outside. Further, the wafer W is carried in / out of the cassette C. In the processing station 11, various single-wafer processing units for performing predetermined processing on the wafers W one by one in the coating and developing processing steps are arranged at predetermined positions in multiple stages. Interface section 12
In this case, the wafer W is transferred to and from the exposure apparatus 13 provided adjacent to the coating and developing apparatus 1.

In the cassette station 10, as shown in FIG.
(For example, four) cassettes C are placed in a line in the X direction (vertical direction in FIG. 1) with their respective wafer W entrances facing the processing station 11 side. This cassette C arrangement direction (X direction) and the wafer W arrangement direction of the wafers W accommodated in the cassette C (Z direction; vertical direction)
Is movable along the transfer path 21a, and selectively accesses each cassette C.

The wafer carrier 21 is configured to be rotatable in the θ direction.
The alignment unit (ALIM) and the extension unit (EXT) belonging to the multi-stage unit in the third processing unit group G3 on the side can also be accessed.

In the processing station 11, as shown in FIG. 1, a vertical transfer type transfer device 22 is provided at the center thereof, around which various processing units are multi-tiered in one or more sets. They are arranged to form a processing unit group. In the coating and developing processing apparatus 1, five processing unit groups G1, G2, G3, G4, and G5 can be arranged, and the first and second processing unit groups G1, G1,
G2 is disposed on the front side of the system, the third processing unit group G3 is disposed adjacent to the cassette station 10, and the fourth processing unit group G4 is disposed on the interface unit 1.
5, and a fifth processing unit group G5 indicated by a broken line can be arranged on the back side. The transfer device 22 is configured to be rotatable in the θ direction and movable in the Z direction, and is capable of transferring the wafer W to and from each processing unit.

In the first processing unit group G1, as shown in FIG. 2, two spinner-type processing units for mounting a wafer W on a spin chuck in a cup CP and performing a predetermined processing, for example, a resist liquid application unit ( COT) and the development processing unit (DEV) are stacked in two stages from the bottom. And like the first processing unit group G1, the second
Also in the processing unit group G2, two spinner type processing units, for example, a resist liquid application unit (COT)
And a development processing unit (DEV) are stacked in two stages from the bottom.

As shown in FIG. 2, a high-performance filter 23 such as an ULPA filter is provided above the coating and developing apparatus 1 in the three zones (cassette station 10, processing station 11, interface section 1).
2) It is provided for each. When the air supplied from the upstream side of the high-performance filter 23 passes through the high-performance filter 23, particles and organic components are collected and removed. Therefore, through this high-performance filter 23,
The above-mentioned cassette mounting table 20, the transfer path 21a of the wafer transfer body 21, the first and second processing unit groups G1 and G2, and the third to fifth processing unit groups G3, G4 and G5 and the interface unit 12 described later. In the figure, a downflow of clean air from above is supplied in the direction of the solid arrow or the dotted arrow in FIG.

In the third processing unit group G3, as shown in FIG. 3, an oven-type processing unit for mounting the wafer W on a mounting table and performing a predetermined processing, for example, a cooling processing unit (COL) for performing a cooling processing, An adhesion unit (AD) for performing a so-called hydrophobizing process for improving the fixability of a resist, and an alignment unit (A) for performing positioning.
LIM), an extension unit (EXT), a pre-baking unit (PREBAKE) as a heating unit for performing a heating process before the exposure process, and a post-baking unit (POBAKE) are, for example, stacked in eight stages from the bottom.

Similarly, in the fourth processing unit group G4,
As shown in FIG. 3, an oven-type processing unit that places a wafer W on a mounting table and performs a predetermined process, for example, a cooling process unit (COL) that performs a cooling process, an extension / cooling process unit (EXTCOL) that also serves as a cooling process ),
Extension unit (EXT), Adhesion unit (AD), Pre-baking unit (PREB)
AKE) and post-baking unit (POBAK)
E) are stacked in order from the bottom, for example, in eight stages.

As described above, the cooling processing unit (COL) and the extension / cooling processing unit (EXTCOL) having the low processing temperature are arranged in the lower stage, and the pre-baking unit (PREBAKE), the post-baking unit (POBAKE) and the ad- By arranging the fusion unit (AD) in the upper stage, thermal mutual interference between the units can be reduced.

As shown in FIG. 1, the interface section 12 has the same dimensions in the depth direction (X direction) as the processing station 11, but has a smaller size in the width direction. As shown in FIGS. 1 and 2, a portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages on the front side of the interface unit 12, and the peripheral exposure device 24 is arranged on the rear side. Are arranged.

At the center of the interface section 12, a wafer transfer device 25 is provided. Wafer transfer device 2
Numeral 5 moves in the X direction and the Z direction (vertical direction) so that the cassettes CR and BR and the peripheral exposure device 24 can be accessed. The wafer transfer device 25 is configured to be rotatable also in the θ direction, and includes an extension unit (EXT) belonging to the fourth processing unit group G4 on the processing station 11 side and a transfer table on the exposure apparatus side. (Not shown) can also be accessed.

FIG. 4 shows the developing unit (DEV).
And FIG. 5 is a plan view of the same. As shown in FIGS. 4 and 5, this developing unit (DEV)
A drive motor 32 is provided at a central portion in the casing 31. The rotation speed of the drive motor 32 can be arbitrarily changed by a controller 33 separately provided outside the apparatus. A spin chuck 34 is provided above the drive motor 32 so as to be rotatable and vertically movable by the drive motor 32, and the wafer W to be subjected to the development processing is placed on the upper surface of the spin chuck 34. Then, it is held by suction in a horizontal state.

Around the spin chuck 34, there is provided an annular cup 35 made of resin or metal for preventing the developing solution and the cleaning solution from scattering. The side wall of the cup 35 has a shape having an inward slope that becomes narrower toward the upper part. The diameter of the opening 36 of the cup 35 is set to such a size that the horizontal wafer W can be lowered and carried into the cup 35 as it is.

The bottom surface 37 of the cup 35 is inclined, and a waste liquid pipe 38 is connected to the bottom of the bottom surface 37. An exhaust pipe 39 for exhausting the atmosphere inside the cup 35 is connected to the opposite side of the waste liquid pipe 38 across the drive motor 32. An annular wall 40 is provided upright on the bottom surface 37 of the cup 35. At the upper end of the annular wall 40, a rectifying plate 41 close to the rear surface of the wafer W held by the spin chuck 34 is provided. The periphery of the current plate 41 is inclined downward toward the outside.

A developer supply nozzle 42 is arranged in the casing 31 on the upper side of the cup 35.
The developer supply nozzle 42 is connected via a developer supply pipe 43 to a developer supply device 44 provided outside the development processing unit (DEV). Developer supply nozzle 4
As shown in FIG. 4, normal, that is, when processing is not performed, the developer 4 is stored in a closed container 45 and is on standby. The atmosphere of a solvent or the like filling the inside of the closed container 45 evaporates the developer and causes Solidification is prevented. The developer supply nozzle 42 is connected to the transport rail 4 shown in FIG.
5 is gripped by a gripping arm 47 that is movable on the
Reciprocation in the direction indicated by the arrow.

With the cup 35 interposed, the developer supply nozzle 4
A cleaning liquid header 48 is provided on the opposite side of the cleaning liquid header 2.
A cleaning nozzle 49 is provided below the cleaning liquid header 48. The cleaning liquid header 48 is connected to a pure water supply device 51 provided outside the development processing unit (DEV) via a cleaning liquid supply pipe 50, and pure water supplied from the pure water supply device 51 is supplied from a cleaning nozzle 49. It discharges. The cleaning liquid header 48 is also gripped by the gripping arm 47, like the developer supply nozzle 42, and is capable of reciprocating in the direction indicated by the arrow in FIG.

As shown in FIG. 4, the developing unit (D
In EV), a cleaning nozzle 52 for supplying a cleaning liquid such as pure water to the back surface of the wafer W is separately arranged. The cleaning nozzle 52 is connected to a cleaning liquid supply device 54 via a supply pipe 53. Therefore, for example, the back surface of the wafer W can be cleaned with pure water. The cleaning liquid supply device 54 may be shared with the pure water supply device 51.

FIG. 6 is a perspective view showing the structure of the developer supply nozzle 42, and FIG. 7 is a bottom view thereof. 6 and 7
As shown in (1), the developer supply nozzle 42 has a length substantially corresponding to the diameter of the wafer W, and a plurality of discharge ports 61 for discharging the developer onto the surface of the wafer W are provided on the lower surface thereof. The developer supply nozzle 42 has a plurality of areas, for example, 5 areas.
It is divided into two areas 62a to 62e. These areas 62a to 62e are symmetrical about the area 62c corresponding to the vicinity of the rotation center of the wafer W.
That is, the areas 62b and 62d are arranged symmetrically about the area 62c, and the areas 62a and 62e are arranged symmetrically about the area 62c.

A single pipe 63 is arranged in the developer supply nozzle 42 toward the diameter direction of the wafer W. The pipe 63 has one end connected to the pipe 4 shown in FIG.
3 and the developer supply device 4
4 supplies a developing solution. On the other hand, a pipe 64a extends from the pipe 63 toward each of the areas 62a to 62e.
To 64e are branched. Branched pipes 64a to 64
e is connected to the discharge port 61 of each of the areas 62a to 62e.

Further, on each of the branched pipes 64a to 64e, air operation valves 65a to 65e are respectively provided.
e is interposed. That is, the air operation valves 65a to 65e as means for controlling the discharge amount of the developer discharged from the discharge ports 61 of the respective areas 62a to 62e.
Are provided integrally with the developer supply nozzle 42. These air operation valves 65a to 65e are controlled by the controller 33 shown in FIG. In the present embodiment, with the above configuration, it is possible to reduce the number of pipes and control the ejection timing in units of 0.1 seconds for each area.

The development processing unit (D
EV) is configured as described above, and the wafer W that has been subjected to the exposure processing is placed in the spin chuck 34 in the cup 35.
When the developing solution supply nozzle 42 is placed on the wafer W, the developer supply nozzle 42 is grasped by the grasping arm 47, and the developer supply nozzle 42 moves to a predetermined position, that is, a position above the wafer W, which coincides with the diameter of the wafer W. Next, the developer supply nozzle 42 descends, and the developer is supplied from the developer supply device 44 to the developer supply nozzle 42 while the wafer W rotates at a low speed.

FIG. 8 is a view showing an example of the discharge timing of the developer discharged from the discharge ports 61 of the respective areas 62a to 62e when the developer is supplied as described above, and FIG. 9 shows an example of the discharge amount. FIG. These controls are all performed by the air operation valves 65a to 65a as described above.
The opening and closing timing of 65e and the restriction of the flow rate are performed.

As for the discharge timing, as shown in FIG. 8, the discharge of the developing solution is first started from the discharge ports 61 of the areas 62a and 62e corresponding to the vicinity of the outer periphery of the wafer W, and the wafer is delayed by 0.2 second from the discharge. The developing solution is discharged from the discharge ports 61 of the areas 62b and 62d corresponding to the vicinity of the center of W, and further discharged from the discharge port 61 of the area 62c corresponding to the vicinity of the center of the wafer W with a delay of 0.2 seconds. It has become. Then, the areas 62a and 62
The developer is discharged from the discharge port 61 of e for 2 seconds, the developer is discharged from the discharge ports 61 of the areas 62b and 62d for 1.8 seconds, and the developer is discharged from the discharge port 61 of the area 62c for 1.6 seconds. It is designed to be ejected. It is to be noted that such a time is merely an example.

As for the control of the discharge amount, as shown in FIG.
The largest amount of developer is discharged from the discharge port 61 of 2e,
Areas 62b and 62d corresponding to the vicinity of the middle of wafer W
The next largest amount of the developing solution is discharged from the discharge port 61, and the smallest amount of the developing solution is discharged from the discharge port 61 in the area 62c corresponding to the vicinity of the center of the wafer W.

That is, in this embodiment, each area 62a
Out of the area 62c corresponding to the vicinity of the center of rotation of the wafer W, a small amount of developer is discharged compared to the other areas, and furthermore, the discharge ports of the areas 62a to 62e. The developer discharged from the nozzle 61 approaches the vicinity of the rotation center of the wafer W, so that the amount thereof becomes small. Therefore, the ratio of the pure developer supplied near the center of rotation of the wafer W is equal to the ratio of the pure developer supplied to the middle portion and the outer periphery of the wafer W. Disappears. Therefore, the wafer W
Can have a uniform line width.

Next, another embodiment will be described. In the embodiment described above, when the developer supply nozzle 42 is divided into a plurality of areas 62a to 62e, as shown in FIG. 10, the discharge ports 61 at the boundaries between adjacent areas (for example, 62a and 62b) A “blank” portion 69 may occur between them. If there is such a "blank" portion 69, there is a possibility that the developing process becomes uneven. The following embodiments shown in FIGS. 11 and 12 prevent this.

FIG. 11 is a bottom view showing the structure of a developer supply nozzle according to another embodiment. As shown in FIG. 11, in the developer supply nozzle 70, a plurality of areas 62
a to 62e are arranged in a staggered manner. This eliminates the "blank" portion. In addition, in the above-described configuration, a portion where the discharge ports 61 overlap between adjacent areas occurs. In such a portion, the discharge ports may be smaller than other parts, for example, the area may be １ ／. Alternatively, the density of the discharge ports 61 in such a part is reduced, for example, 1 /
The density may be set to 2. Thereby, more uniform development processing can be performed.

FIG. 12 is a bottom view showing the structure of a developer supply nozzle according to another embodiment. As shown in FIG. 12, in the developer supply nozzle 71, a plurality of areas 62
a to 62e are arranged in a staircase shape in which a portion where the discharge port 61 overlaps between adjacent areas. This allows the above "
There is no "blank" portion. The portion where the discharge ports 61 overlap in the adjacent area can be configured in the same manner as described above.

FIG. 13 is a front view showing the structure of a developer supply nozzle according to still another embodiment. As shown in FIG. 13, in the developer supply nozzle 72, a plurality of areas 62a
It is configured such that the heights between ６２62e and ｅ62e are different. For example, areas 62a and 6 corresponding to the vicinity of the outer periphery of the wafer W
2e is the lowest position, the discharge port 61 of the area 62b and 62d corresponding to the vicinity of the middle of the wafer W is the next lowest position, the discharge port 61 of the area 62c corresponding to the vicinity of the center of the wafer W.
Is located at the highest position. By changing the height in this manner, the timing at which the developing solution discharged from each area reaches the wafer W can be controlled, whereby the developing process can be made uniform.

FIG. 14 is a view schematically showing a configuration of a developer supply nozzle according to still another embodiment. The developer supply nozzle 73 is provided in the same manner as in the above-described embodiments.
A number of discharge ports for discharging the developing solution to the surface of the wafer W are provided on the lower surface of the wafer W at a length substantially corresponding to the diameter of the wafer W. In the present embodiment, the discharge port is divided into seven areas 73a to 73g so as to be symmetric about the area 73d corresponding to the vicinity of the rotation center of the wafer W.

Each area 73 of the developer supply nozzle 73
Two pipes 74 and 75 are roughly connected to a to 73g. The two pipes 74 and 75 are provided with electromagnetic valves 76 and 77, respectively, and a developer supply pipe 43 connected to a developer supply device 44 as shown in FIG. It is connected to the.

One pipe 74 is connected to areas 73a and 73g, which are areas corresponding to the vicinity of the outer periphery of the wafer W. The other pipe 75 is connected to the wafer 73 excluding the areas 73a and 73g corresponding to the vicinity of the outer periphery. All other areas 73b-7 including area 73d near the center of W
3f. Specifically, the other pipe 7
5 is provided with branch pipes 75a to 75e. Each of the branch pipes 75a to 75e has an area 73 corresponding to the vicinity of the outer periphery.
a and 73g are connected to areas 73b to 73f, respectively. The branch pipes 75a to 75e are provided with needle valves 75f to 75j, respectively. By adjusting the opening amounts of the needle valves 75f to 75j, the developer supplied through the areas 73b to 73f is adjusted. The amount can be finely controlled.

In this embodiment, the developing solution can be supplied to the two systems of the areas 73a and 73g corresponding to the vicinity of the outer periphery of the wafer W and the other areas 73b to 73f. Therefore, the above-mentioned solenoid valves 76 and 77
The opening and closing operation of the area 73a corresponding to the vicinity of the outer periphery,
73 g of developer supplied from 73 g and other areas 73
The discharge amount of the developer supplied from b to 73f can be controlled separately. Therefore, if the operations of the electromagnetic valves 76 and 77 as the discharge amount control means are appropriately adjusted, the ratio of the pure developer supplied near the rotation center of the wafer W, which is the processing object, and the processing object Can be controlled so as to substantially match the ratio of the pure developer supplied to the outer periphery of the developing device, and the variation in the developing process can be reduced.

In particular, since the supply system of the developing solution to the areas 73a and 73g corresponding to the vicinity of the outer periphery of the wafer W, which tends to have a large line width, is made independent, the independent control is easy and the development balance can be easily maintained. Become.

FIG. 15 is a diagram schematically showing an example of a specific developer supply timing using the developer supply nozzle 73 shown in FIG. First, FIG.
As shown in, the solenoid valves 76 and 77 and the needle valve 7
The developing liquid is supplied from the ejection ports belonging to all the areas 73a to 73g for a predetermined time while leaving 5f to 75j open. Next, as shown in FIG. 15B, the electromagnetic valve 77 is closed, the discharge from the areas 73b to 73f is stopped, and the developer is supplied only from the areas 73a and 73g corresponding to the vicinity of the outer periphery for a predetermined time. Then, as shown in FIG. 15C, the electromagnetic valve 77 is opened again to supply the developer from the discharge ports belonging to all the areas 73a to 73g.
Thereby, the areas 73a and 73g corresponding to the vicinity of the outer periphery
The supply time of the pure developer to the other areas 73b to 73b
f, the ratio of the pure developer to the middle portion and the vicinity of the outer periphery of the wafer W is equalized.

The supply timing of the developing solution shown in FIG. 15 is of course only an example.
If the developing solution is supplied from the ejection ports belonging to all the areas 73a to 73g for a predetermined time, finally, the developing solution is supplied for a predetermined time from only the areas 73a and 73g corresponding to the vicinity of the outer periphery of the wafer W. You can also.

Further, as in the above-described embodiment, control is performed such that the discharge amount from the discharge port of the area 73d corresponding to the vicinity of the rotation center of the wafer W is the smallest, and the discharge amount gradually increases toward the outer periphery. In this case, the opening amounts of the needle valves 75f to 75j can be adjusted and controlled.

On the other hand, in the area 73d corresponding to the vicinity of the center of rotation of the wafer W, the center of the area 73d and the area
Again, there is a difference in the discharge amount of the developer. That is, the center of the area 73d is
3 is the center of rotation of the entirety, and when a predetermined supply pressure is applied by adjusting the throttle of the needle valve 75h in this area 73d, if the diameters of the discharge ports are all the same, the discharge is performed near the center of the area 73d. The amount increases, and the discharge amount decreases near the outer periphery. Therefore, in the area 73d corresponding to the vicinity of the rotation center of the wafer W, the size of the discharge port is not made constant but formed so as to become smaller as the vicinity of the rotation center, and the discharge amount of the developer in the area 73d is reduced. It is preferable to adopt a configuration in which the amount becomes smaller toward the rotation center.

FIG. 16 is a bottom view of the developer supply nozzle 73 showing the structure when the size of the discharge port is changed. FIG. 16A shows that each of the discharge ports 78 is formed in a hole shape.
As shown in the drawing, the hole diameter of the discharge port 78a near the center in the area 73d is the smallest, and the discharge ports 78b and 78c arranged near the outer periphery are formed such that the hole diameter becomes larger. FIG. 16B shows the state of the discharge port 7.
9 is formed in a slit shape along the length direction of the developer supply nozzle 73, and corresponds to an area 7 corresponding to the vicinity of the center of rotation.
In 3d, the slit width of the outlet port 79a near the center is the narrowest, and the outlet ports 79b, 79 formed near the outer periphery.
It is formed so that the slit width becomes wider as c increases. By forming in this manner, the area 73d
Even when the developer is supplied at a predetermined pressure, the discharge amount of the developer discharged from the discharge ports 78a, 79a near the center is small, and the discharge ports 78b, 78c, 79b,
The discharge amount of the developer discharged from 79c is increased, the supply ratio of the pure developer in the area 73d is averaged, and it is possible to prevent the line width from being varied in the area 73d.

In the present embodiment, the supply system of the developing solution to the areas 73a and 73g corresponding to the vicinity of the outer periphery of the wafer W is made independent. Therefore, by making the developer supplied through the pipe 74 a high concentration different from the developer supplied through the pipe 75, the developing speed near the outer periphery is increased, and the variation in the developing process is reduced. It can be reduced.

Further, a heating member (not shown) is provided in the pipe 74 so that the temperature of the developing solution discharged from the areas 73a and 73g corresponding to the vicinity of the outer periphery of the wafer W is reduced to other areas. The temperature of the developer discharged from the nozzles 73b to 73f can be controlled to be higher than the temperature of the developer.
The developing speed in the vicinity of the outer periphery can be increased, and variations in the developing process can be reduced.

The present invention is not limited to the above embodiment. For example, the present invention can naturally be applied not only to a developing device for developing a wafer W, but also to a developing device for developing another substrate such as an LCD substrate.

[0078]

As described above, according to the first aspect of the present invention, there is provided a developing apparatus having a nozzle in which discharge ports for discharging a developing solution are arranged in a row on the surface of an object to be rotated. Thus, the nozzle is divided into a plurality of areas, and a smaller amount of the developer is discharged from the discharge port of the area corresponding to the vicinity of the rotation center of the object to be processed than the other areas. With this configuration, the ratio of the pure developer supplied near the rotation center of the object to be processed and the ratio of the pure developer supplied to the outer periphery of the object become substantially equal, and the variation in the development processing Is reduced.

According to the second aspect of the present invention, the means for rotating while holding the object to be processed, and the discharge ports for discharging the developing solution on the surface of the object to be held and rotated are arranged in line.
In addition, a small amount of developer is discharged from a nozzle divided into a plurality of areas and a discharge port of an area corresponding to the vicinity of the rotation center of the object to be processed among the plurality of areas as compared with other areas. Means for controlling the discharge amount of the developing solution, the ratio of the pure developing solution supplied near the rotation center of the object to be processed and the pure liquid supplied to the outer periphery of the object to be processed are The ratio of the developing solution becomes almost the same, and the variation in the developing process is reduced.

According to the third aspect of the present invention, since the respective areas are arranged so as to be substantially symmetric with respect to the rotation center of the object to be processed, at least the object to be processed is 1/1/4. With two rotations, the developer can be supplied to the entire surface of the object to be processed, and can be supplied uniformly in the rotation direction.

According to the fourth aspect of the present invention, since the amount of the developing solution discharged from the area approaches the rotation center of the object to be processed and thus becomes small, the developer is discharged from the area near the rotation center of the object. The ratio of the pure developer supplied to the substrate and the ratio of the pure developer supplied to the outer periphery of the object to be processed more accurately coincide with each other, and the variation in the development processing is further reduced.

According to the fifth aspect of the present invention, since the adjacent areas partially overlap in the rotation direction of the substrate to be processed, the discharge ports formed between the adjacent areas are partially overlapped. The "blank" part can be eliminated. This makes it possible to make the development processing uniform.

According to the sixth aspect of the present invention, since the heights between the areas are different from each other, the timing at which the developer reaches the object to be processed corresponding to each area and the liquid at the time of collision can be obtained. The pressure can be controlled, and the development processing can be made uniform.

According to the seventh aspect of the present invention, there is provided a developing apparatus having a nozzle in which discharge ports for discharging a developing solution are arranged in a row on a surface of a rotating object to be processed. And the means for controlling the discharge amount of the developer discharged from the discharge port of each area is provided integrally with the nozzle, so that the discharge of the developer discharged from each area is performed. The time and the discharge amount can be controlled more accurately, and the number of pipes for sending the developer to the nozzle can be reduced.

According to the eighth aspect of the present invention, the means for rotating while holding the object to be processed, and the discharge ports for discharging the developing solution on the surface of the object to be held and rotated are arranged in line,
In addition, a nozzle divided into a plurality of areas, and a unit that is provided integrally with the nozzle and that controls a discharge amount of the developing solution discharged from a discharge port of each area is configured. The discharge time and discharge amount of the developer discharged from the area can be controlled more accurately, and the number of piping for sending the developer to the nozzle can be reduced.

According to the ninth aspect of the present invention, since the discharge time of the developer discharged from the area is configured to be shorter as approaching the vicinity of the rotation center of the object, the rotation of the object is reduced. The ratio of the pure developing solution supplied near the center and the ratio of the pure developing solution supplied to the outer periphery of the object to be processed almost coincide with each other, and the variation in the developing process is reduced.

According to the tenth aspect of the present invention, since the means for controlling the discharge amount of the developer is an air operating valve or a solenoid valve, it is possible to switch on / off the discharge of the developer with high sensitivity. Thus, the discharge time and discharge amount of the developer discharged from each area can be controlled more accurately.

According to the eleventh aspect of the present invention, the discharge amount of the developer discharged from the discharge port of each area is provided separately in an area corresponding to the vicinity of the outer periphery of the object and another area. Is controlled so that the ratio of the pure developer supplied near the rotation center of the object to be processed and the ratio of the pure developer supplied to the outer periphery of the object to be processed substantially coincide with each other. As a result, variations in the development processing are reduced.

According to the twelfth aspect of the present invention, the discharge time of the developer discharged from the area corresponding to the vicinity of the outer periphery of the object is longer than the discharge time of the developer discharged from the other areas. Since the length is long, the ratio of the pure developer supplied near the center of rotation of the object to be processed almost coincides with the ratio of the pure developer supplied to the outer periphery of the object to be processed. Less.

According to the thirteenth aspect of the present invention, the concentration of the developer discharged from the area corresponding to the vicinity of the outer periphery of the object is higher than the concentration of the developer discharged from the other areas. Further, it is possible to increase the developing speed in the vicinity of the outer periphery of the object to be processed, and to reduce variations in the developing process.

According to the present invention, the temperature of the developer discharged from the area corresponding to the vicinity of the outer periphery of the object to be processed is higher than the temperature of the developer discharged from the other areas. Because of the high processing speed, the developing speed in the vicinity of the outer periphery of the object can be increased, and the variation in the developing process can be reduced.

According to the fifteenth aspect of the present invention, the discharge port formed in the area corresponding to the vicinity of the rotation center of the object discharges a smaller amount of the developing solution toward the rotation center in the area. It is formed in such a size. Therefore, the ratio of the pure developer near the center and the vicinity of the outer periphery in the area near the rotation center can be equalized, and the variation in the development processing in the area can be reduced.

[Brief description of the drawings]

FIG. 1 is a plan view of a coating and developing apparatus according to an embodiment of the present invention.

FIG. 2 is a front view of the coating and developing apparatus shown in FIG.

FIG. 3 is a rear view of the coating and developing apparatus shown in FIG. 1;

FIG. 4 is a front view showing a configuration of a developing unit shown in FIG. 1;

FIG. 5 is a plan view illustrating a configuration of a developing unit illustrated in FIG. 4;

FIG. 6 is a perspective view showing a configuration of a developer supply nozzle shown in FIG.

FIG. 7 is a bottom view showing the configuration of the developer supply nozzle shown in FIG.

8 is a diagram illustrating an example of a discharge timing of a developer discharged from a discharge port of each area of the developer supply nozzle illustrated in FIG. 6;

9 is a diagram illustrating an example of a discharge amount of a developer discharged from a discharge port of each area of the developer supply nozzle illustrated in FIG. 6;

FIG. 10 is a diagram for explaining a problem when a developer supply nozzle is divided into a plurality of areas as in the present invention.

FIG. 11 is a bottom view illustrating a configuration of a developer supply nozzle according to another embodiment.

FIG. 12 is a bottom view illustrating a configuration of a developer supply nozzle according to another embodiment.

FIG. 13 is a front view showing a configuration of a developer supply nozzle according to still another embodiment.

FIG. 14 is a view schematically showing a configuration of a developer supply nozzle according to still another embodiment.

FIG. 15 is a diagram schematically illustrating an example of a specific developer supply timing using the developer supply nozzle 73 illustrated in FIG. 14;

FIG. 16 is a bottom view of a developer supply nozzle showing a structure when the size of a discharge port is changed.

[Explanation of symbols]

 34 Spin chuck 42, 73 Developer supply nozzle 61, 78, 79 Discharge port 62a-62e Divided multiple areas 65a-65e Air operating valve 76, 77 Solenoid valve DEV Development processing unit W Wafer

Claims (15)

[Claims] 1. A developing device having a nozzle in which discharge ports for discharging a developing solution are arranged in a row on a surface of an object to be rotated, wherein the nozzle is divided into a plurality of areas, and A developing device wherein a smaller amount of developing solution is discharged from a discharge port of an area corresponding to the vicinity of the rotation center of the object to be processed as compared with other areas. 2. A means for rotating while holding an object to be processed, and a nozzle in which discharge ports for discharging a developing solution are arranged in a row on the surface of the object to be held and rotated, and divided into a plurality of areas. And controlling the discharge amount of the developer so that a smaller amount of the developer is discharged from the discharge port of the area corresponding to the vicinity of the rotation center of the object to be processed among the plurality of areas as compared with the other areas. And a developing device. 3. The developing device according to claim 1, wherein said areas are arranged so as to be substantially symmetric with respect to a rotation center of said object. . 4. One of claims 1 to 3
3. The developing device according to claim 1, wherein the amount of the developer discharged from the area decreases as the position approaches the rotation center of the object. 5. One of claims 1 to 4
3. The developing device according to claim 1, wherein a part between the adjacent areas partially overlaps in a rotation direction of the object to be processed. 6. One of claims 1 to 5
3. The developing device according to claim 1, wherein heights between the areas are different. 7. A developing device having a nozzle in which discharge ports for discharging a developing solution are arranged in a row on the surface of a rotating object to be processed, wherein the nozzle is divided into a plurality of areas, and A developing device characterized in that means for controlling the discharge amount of the developer discharged from the discharge port is provided integrally with the nozzle. 8. A nozzle which rotates while holding an object to be processed, and a nozzle in which discharge ports for discharging a developer are arranged in a row on a surface of the object to be held and rotated, and divided into a plurality of areas. And a unit provided integrally with the nozzle and controlling a discharge amount of a developer discharged from a discharge port of each area. 9. The developing device according to claim 7, wherein a discharge time of the developer discharged from the area becomes shorter as approaching a rotation center of the object to be processed. . 10. The method according to claim 7, wherein:
2. The developing device according to claim 1, wherein the means for controlling the discharge amount of the developer is an air operating valve or a solenoid valve. 11. A nozzle which rotates while holding an object to be processed, and a nozzle in which discharge ports for discharging a developing solution are arranged in a row on a surface of the object to be held and rotated, and divided into a plurality of areas. And provided separately in an area corresponding to the vicinity of the outer periphery of the object to be processed and another area, and means for controlling a discharge amount of the developer discharged from a discharge port of each area. Developing device. 12. The developing device according to claim 11, wherein a discharge time of a developer discharged from an area corresponding to the vicinity of the outer periphery is longer than a discharge time of a developer discharged from another area. A developing device. 13. The developing device according to claim 11, wherein the concentration of the developer discharged from an area corresponding to the vicinity of the outer periphery is higher than the concentration of the developer discharged from another area. A developing device. 14. The developing device according to claim 11, wherein the temperature of the developer discharged from an area corresponding to the vicinity of the outer periphery is discharged from another area. A developing device having a temperature higher than the temperature of the developing solution. 15. The developing device according to claim 11, wherein a discharge formed in an area corresponding to a vicinity of a rotation center of the processing target among the plurality of areas. The developing device is characterized in that the outlet is formed in such a size that a smaller amount of developer is discharged toward the center of rotation in the area.