JPH11165114A - Single substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To supply a processing liquid properly and uniformly adjust the surface temperature of a substrate. SOLUTION: Four nozzles 5a-5d are arranged at positions which are differently distant respectively, toward the outer periphery from the rotary center of a substrate 1. A radiation thermometer 7 constantly detects the surface temperature distribution of the substrate 1 and the detection results are output to a flow rate controller 6. The radiation thermometer 7 indicates the surface temperature of the rapidly rotating substrate 1 as a concentric temperature distribution. The flow rate controller 6 analyzes the detected results of the temperature distribution received from the radiation thermometer 7, and controls the flow rate of a processing liquid by adjusting the individual opening levels of valves 4a-4d on a processing liquid supply device 4 so that the surface temperature of the substrate 1 is uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a single-wafer substrate processing apparatus, and more particularly, to a substrate (semiconductor wafer, glass substrate for a liquid crystal display, glass substrate for a photomask, substrate for an optical disk, etc.). ) On the surface of the treatment liquid (chemical,
Pure water or the like) to perform an arbitrary process.

[0002]

2. Description of the Related Art Conventionally, a surface treatment of a substrate using a processing liquid (etching, cleaning, photoresist coating, development, etc.).
There is a single-wafer type substrate processing apparatus as an apparatus for performing the above. The single-wafer substrate processing apparatus is an apparatus that performs a surface treatment by supplying a processing liquid to a rotating substrate.

FIG. 4 is a longitudinal sectional view of a conventional single wafer processing apparatus. In FIG. 4, a conventional single-wafer substrate processing apparatus includes a spin base 2 for holding a substrate 1 fixedly, a motor 3 for rotating the spin base 2 at high speed, and a processing liquid from a nozzle 5a at the center of the surface of the substrate 1. And a processing liquid supply device 4 for supplying the same. The processing liquid supply device 4 opens and closes the valve 4a to supply the processing liquid.

In the conventional single-wafer substrate processing apparatus, the processing liquid is supplied from the nozzle 5a to the central portion of the substrate 1 rotating at a high speed and the centrifugal force of the substrate 1 is used to remove the processing liquid from the central portion of the substrate 1. By supplying the processing liquid to the outer peripheral portion, the surface treatment of the entire substrate 1 is enabled.

[0005]

Here, the treatment liquid used for the surface treatment of the substrate 1 is adjusted to a predetermined temperature in order to maximize the treatment effect.

However, in the above-described conventional single-wafer substrate processing apparatus, since the processing liquid is only supplied to one central portion of the substrate 1, the processing liquid is centrifugally applied to the outer peripheral portion of the substrate 1. The processing liquid radiates or absorbs heat before being supplied to the substrate 1, and the temperature of the processing liquid over the entire substrate 1 is not uniform. That is, the temperature of the processing liquid in the central portion of the substrate 1 differs from the temperature of the processing liquid in the outer peripheral portion.

As described above, when the temperature of the processing liquid over the entire substrate 1 is not uniform, for example, removal of organic substances, metals, and particles using a high-temperature processing liquid lacks uniformity of processing, and the temperature is around room temperature. In the etching performed using the processing liquid, there is a problem that the progress of the etching becomes uneven between the central portion and the outer peripheral portion of the substrate 1 depending on whether the processing liquid is higher or lower than the normal temperature.

SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a single-wafer substrate processing apparatus for appropriately supplying a processing liquid and uniformly adjusting the surface temperature of a substrate.

[0009]

Means for Solving the Problems and Effects of the Invention A first invention is a single-wafer substrate processing apparatus for supplying a processing liquid to the surface of a rotating substrate, wherein the substrate rotating means for rotating the substrate, A plurality of nozzles that are located at different distances from the rotation center toward the outer peripheral direction to supply the processing liquid onto the substrate, and correspond to each of the plurality of nozzles, and the flow rate of the processing liquid supplied by the plurality of nozzles is A plurality of variable flow rate adjusting means, a temperature detecting means for detecting a distribution of the surface temperature of the entire substrate, and a plurality of flow rate adjusting means for making the distribution of the substrate surface temperature uniform based on the detection content of the temperature detecting means. Flow control means for individually controlling the means.

As described above, according to the first aspect, the plurality of flow rate adjusting means are operated in accordance with the temperature distribution constantly detected by the temperature detecting means, so that the supply amount of the processing liquid from the plurality of nozzles is controlled. By appropriately controlling the increase and decrease, the surface temperature of the substrate can be made uniform. Therefore, the uniformity of the surface treatment of the substrate is improved.

A second invention is a single-wafer substrate processing apparatus for supplying M (M is an integer of 2 or more) types of processing liquids having different temperatures only to the surface of a rotating substrate. Means, N (N is an integer of 2 or more) nozzles which are located at different distances from the rotation center of the substrate toward the outer periphery and supply M kinds of processing liquids to the substrate;
(M × N) flow rate adjusting means corresponding to each of the N nozzles and varying the flow rates of the M kinds of processing liquid supplied by the N nozzles, and a temperature for detecting the surface temperature distribution of the entire substrate Based on the detection content of the detection means and the temperature detection means,
A flow control means for individually controlling the (M × N) flow control means so that the distribution of the surface temperature of the substrate becomes uniform.

As described above, according to the second aspect, N flow rate adjusting means are provided for each of the M types of processing liquids having different supply temperatures. Then, by operating the (M × N) flow rate adjusting means corresponding to the temperature distribution constantly detected by the temperature detecting means, the supply amount of the processing liquid from the N nozzles is appropriately controlled to increase or decrease. The surface temperature of the substrate can be made uniform. Therefore, the uniformity of the surface treatment of the substrate is improved.

In a third aspect based on the second aspect, the flow rate control means comprises (M × N) flow rate adjusting means such that processing liquids having different flow rates at the same temperature are supplied from the N nozzles. Is controlled.

According to a third aspect of the present invention, the control method of the flow rate control means in the second aspect of the invention is controlled by a flow rate of the processing liquid.

In a fourth aspect based on the second aspect, the flow rate control means comprises (M × N) flow rate adjustment means such that processing liquids having the same flow rate and different temperatures are supplied from the N nozzles. Is controlled.

According to a fourth aspect of the present invention, the control method of the flow rate control means in the second aspect of the present invention is controlled by the temperature of the processing liquid.

[0017]

(First Embodiment) FIG. 1 is a longitudinal sectional view of a single wafer type substrate processing apparatus according to a first embodiment of the present invention. In FIG. 1, a single-wafer substrate processing apparatus according to the first embodiment includes a spin base 2 that rotatably holds a substrate 1, a motor 3 that rotates the spin base 2 at high speed,
A processing liquid supply device 4 for supplying a processing liquid to the surface of the substrate 1 from the four nozzles 5a to 5d, a flow controller 6 for controlling the flow rate of the processing liquid in the processing liquid supply device 4, and a temperature distribution on the surface of the substrate 1 A radiation thermometer 7 for detection. The processing liquid supply device 4 includes four valves 4a to 4d.

The four nozzles 5a to 5d are provided at different distances from the center of rotation of the substrate 1 toward the outer periphery. The radiation thermometer 7 is always
The temperature distribution on the surface is detected, and the result of the temperature distribution is output to the flow controller 6. Here, the radiation thermometer 7 views the surface temperature of the substrate 1 rotating at high speed as a concentric temperature distribution. The flow controller 6 analyzes the temperature distribution results received from the radiation thermometer 7 and individually adjusts the opening levels of the valves 4 a to 4 d of the processing liquid supply device 4 so that the surface temperature of the substrate 1 becomes uniform. To control the flow rate of the processing solution.

The control performed by the flow controller 6 is performed, for example, as follows. Using a treatment solution at 80 ° C,
When processing must be performed at a surface temperature of the substrate 1 in the range of 78 ° C. to 80 ° C., as a result of the first supply of the processing liquid, the temperature from the central portion to the outer peripheral portion of the substrate 1 becomes 80 ° C.
In the case of a concentric temperature distribution of ° C. (see FIG. 2), the flow rate of the processing liquid is such that “flow rate of nozzle 5d> flow rate of nozzle 5c> flow rate of nozzle 5b> flow rate of nozzle 5a”. Then, the opening levels of the valves 4a to 4d are individually controlled. In other words, the supply amount of the processing liquid to the outer peripheral portion having a lower temperature is increased, and the supply amount of the processing liquid to the central portion is reduced (or the supply amount of the central portion may be unchanged).
It is.

As described above, the single-wafer substrate processing apparatus according to the first embodiment changes the opening amount of each of the valves 4a to 4d in accordance with the temperature distribution which is constantly detected, and changes the nozzles 5a to 5d.
The surface temperature of the substrate 1 can be made uniform by appropriately increasing or decreasing the supply amount of the processing liquid from d. Control of the valves 4a to 4d may be performed by individually and finely adjusting the opening level by following the temperature distribution detected as described above, or may be fixedly performed at a ratio obtained simply from analysis or verification. It is possible.

(Second Embodiment) FIG. 3 shows a second embodiment of the present invention.
It is a longitudinal section of the single wafer type substrate processing device concerning an embodiment. In FIG. 3, a single wafer processing apparatus according to the second embodiment includes a spin base 2 for rotatably holding a substrate 1.
A motor 3 for rotating the spin base 2 at a high speed, and first and second nozzles 5 a to 5 d on the surface of the substrate 1.
, A flow control controller 6 for controlling the flow rates of the first and second processing liquids of the processing liquid supply device 4, and a radiation thermometer for detecting a temperature distribution on the surface of the substrate 1. 7 is provided. The processing liquid supply device 4 includes eight valves 4a to 4h.

As can be seen from FIG. 3, the single-wafer-type substrate processing apparatus of the second embodiment is different from the single-wafer-type substrate processing apparatus of the first embodiment in that the processing liquid is supplied into the processing liquid supply unit 4. It has two liquid supply systems (systems of valves 4a to 4d and systems of valves 4e to 4h). In the processing liquid supply device 4, the valves 4a to 4d and the valves 4e to 4h
Are supplied with first and second processing liquids of the same type but different temperatures.

Here, when the temperature of the first processing liquid is 80 ° C. and the temperature of the second processing liquid is 90 ° C., the control performed by the flow controller 6 is performed, for example, as follows.
When the processing must be performed at a surface temperature of the substrate 1 in the range of 78 ° C. to 80 ° C., as a result of the first processing liquid supply, the temperature from the central portion to the outer peripheral portion of the substrate 1 is 80 ° C. to 70 ° C.
In the case of a concentric temperature distribution of ° C. (see FIG. 2), the second processing liquid is supplied to the nozzles 5c and 5d, and the first processing liquid is supplied to the nozzles 5a and 5b. The opening and closing of the valves 4a to 4h are controlled individually (the valves 4c, 4d, 4e, 4f are closed and the valves 4a, 4b, 4g, 4h are opened). At this time, “flow rate of nozzle 5d> flow rate of nozzle 5c>
The opening levels of the valves 4a to 4h may be individually controlled so that “the flow rate of the nozzle 5b> the flow rate of the nozzle 5a”. Further, the valve 4a and the valve 4e, the valve 4b and the valve 4f, the valve 4c and the valve 4g or the valve 4d
By changing the opening ratio of the valve 4h and the first
It is also possible to supply a mixture of the processing liquid and the second processing liquid.

As described above, the single wafer type substrate processing apparatus of the second embodiment has a processing liquid supply section for processing liquids having different temperatures, thereby controlling the temperature or flow rate of the processing liquid or controlling the flow rate of the processing liquid. By using both, the first
The surface temperature of the substrate 1 can be made uniform more quickly than in the single-wafer-type substrate processing apparatus of the embodiment. Note that different types of processing liquids can be used in the two processing liquid supply units in the processing liquid supply device 4.

Although the single-wafer substrate processing apparatus of the first and second embodiments has been described using four valves 4a to 4d (and valves 4e to 4h), the number of valves is not limited to this. You can freely set the number. Further, in the single wafer processing apparatus of the second embodiment, the case where the processing liquid supply unit has two systems has been described.
The number of processing liquid supply units is not limited to this, and the number can be set freely. Further, in the single wafer processing apparatus of the second embodiment, four nozzles 5a to 5d are provided for the eight valves 4a to 4h. However, nozzles are provided for each of the eight valves 4a to 4h. Is also good. In the first and second embodiments, the valves 4a to 4a
Although the flow rate was controlled in 4 h, the flow rate may be controlled using a regulator instead of a valve, and the means for adjusting the flow rate is not limited to the valve.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view of a single-wafer substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating an example of a temperature distribution on the surface of a substrate 1;

FIG. 3 is a longitudinal sectional view of a single wafer processing apparatus according to a second embodiment of the present invention.

FIG. 4 is a longitudinal sectional view of a conventional single-wafer substrate processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Spin base 3 ... Motor 4 ... Processing liquid supply apparatus 4a-4h ... Valve 5a-5d ... Nozzle 6 ... Flow control controller 7 ... Radiation thermometer

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/306 H01L 21/30 569C 21/306 J

Claims (4)

[Claims] 1. A single-wafer substrate processing apparatus for supplying a processing liquid to a surface of a rotating substrate, comprising: a substrate rotating means for rotating the substrate; and a different distance from a rotation center of the substrate to an outer peripheral direction. A plurality of nozzles positioned to supply the processing liquid onto the substrate; and a plurality of flow rate adjusting means corresponding to each of the plurality of nozzles and varying a flow rate of the processing liquid supplied by the plurality of nozzles, Temperature detecting means for detecting the distribution of the surface temperature of the entire substrate; and individually controlling the plurality of flow rate adjusting means based on the detection content of the temperature detecting means so that the distribution of the surface temperature of the substrate becomes uniform. A single-wafer substrate processing apparatus, comprising: 2. The method according to claim 1, wherein the temperature of the surface of the rotating substrate is different from that of the rotating substrate.
A substrate processing apparatus for supplying (M is an integer of 2 or more) kinds of processing liquids, comprising: a substrate rotating unit for rotating the substrate; and a different position from a rotation center of the substrate toward an outer peripheral direction. N (N is an integer of 2 or more) nozzles for supplying the M types of processing liquid onto the substrate; and M nozzles corresponding to each of the N nozzles and supplied by the N nozzles Varying the flow rate of each type of processing liquid (M
× N) flow rate adjusting means, temperature detecting means for detecting the distribution of the surface temperature of the entire substrate, based on the detection content of the temperature detecting means, so that the distribution of the surface temperature of the substrate is uniform. Flow control means for individually controlling the (M × N) flow control means,
Single wafer type substrate processing equipment. 3. The flow rate controlling means controls the (M × N) flow rate adjusting means such that processing liquids having different flow rates at the same temperature are supplied from the N nozzles. The single-wafer-type substrate processing apparatus according to claim 2. 4. The flow rate control means controls the (M × N) flow rate control means such that processing liquids of the same flow rate and different temperatures are supplied from the N nozzles. The single-wafer-type substrate processing apparatus according to claim 2.