JP2011066322A - Substrate processing apparatus and method for processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus uniformly processing the substrate with a processing liquid, and also to provide a method for processing the substrate. <P>SOLUTION: The substrate processing apparatus 1 is equipped with: a spin chuck 4; a SC1 nozzle 5 for supplying SC1 having a high temperature (e.g. 80°C) toward a surface of a wafer W held by the spin chuck 4; a vapor nozzle 6 for supplying water vapor to the surface of the wafer W held by the spin chuck 4; and a cup 8 accommodating the spin chuck 4. SC1 having high temperature discharged from the SC1 nozzle 5 is supplied to a central part of the wafer W. Water vapor discharged from the vapor nozzle 6 is supplied to a medium position M of the wafer W. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for performing processing using a processing liquid on a substrate. Examples of substrates to be processed include semiconductor wafers, glass substrates for liquid crystal display devices, substrates for plasma displays, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, Substrates such as photomask substrates are included.

In a manufacturing process of a semiconductor device or a liquid crystal display device, there is a single-wafer type substrate processing apparatus that processes substrates one by one in order to perform processing with a processing liquid on the surface of a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel. Sometimes used.
This single-wafer type substrate processing apparatus includes a spin chuck that rotates while holding the substrate substantially horizontal, and a processing liquid nozzle that discharges the processing liquid to the center of the substrate surface rotated by the spin chuck. Yes. The processing liquid supplied on the surface of the substrate receives a centrifugal force generated by the rotation of the substrate, flows toward the peripheral edge on the surface of the substrate, and spreads over the entire surface of the substrate. As a result, the entire surface of the substrate is treated with the treatment liquid.

JP 2005-286221 A

  In such a single wafer type substrate processing apparatus, for example, a processing liquid heated to a high temperature may be used in order to improve a processing speed. In this case, the processing liquid discharged from the processing liquid nozzle is hot immediately after being supplied to the central portion of the surface of the substrate, but in the process of flowing from the central portion of the substrate toward the peripheral edge of the substrate, the liquid temperature is reduced. It will decline. Therefore, on the substrate, the temperature of the processing liquid is relatively high at the central portion, and the temperature of the processing liquid is relatively low in a region other than the central portion. As a result, there is a problem that the processing speed varies within the substrate surface. That is, the process proceeds relatively fast at the central portion of the substrate surface, whereas the processing speed is relatively slow in the region other than the central portion on the substrate surface.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of uniformly performing processing with a processing liquid on the entire surface of a substrate.

  In order to achieve the above object, the invention according to claim 1 is characterized in that the substrate holding means (4) for holding the substrate (W) and the substrate surface held by the substrate holding means have a temperature higher than normal temperature. A processing liquid nozzle (5; 35) for discharging the processing liquid, and a vapor nozzle (6; 36) for discharging the vapor of the liquid contained in the processing liquid to the substrate surface held by the substrate holding means. Including a substrate processing apparatus (1; 31).

In addition, although the alphanumeric characters in parentheses represent corresponding components in the embodiments described later, the scope of the claims is not intended to be limited to the embodiments. The same applies hereinafter.
One of the main causes of the decrease in the temperature of the high temperature processing liquid supplied to the substrate surface is evaporation of the liquid contained in the processing liquid. That is, the temperature of the processing liquid is reduced by the heat of vaporization taken away when the liquid evaporates. Therefore, in the present invention, a high-temperature processing liquid is supplied from the processing liquid nozzle to the substrate surface, while a vapor of the liquid contained in the processing liquid is supplied from the vapor nozzle toward the substrate surface. As a result, the processing liquid supplied to the substrate surface is less likely to evaporate, so that a temperature drop due to evaporation of the processing liquid can be suppressed.

  In particular, the vapor supplied to the surface of the substrate stays around the substrate, and the atmosphere around the substrate becomes saturated (the amount of liquid vapor contained in the atmosphere reaches the saturated vapor amount). Under a saturated atmosphere, no vapor can enter the atmosphere and the liquid does not evaporate. Therefore, when the atmosphere around the substrate is maintained in a saturated state, the liquid contained in the high-temperature treatment liquid supplied to the substrate surface does not evaporate on the substrate surface, and the liquid contained in the treatment liquid is evaporated. There is no heat loss associated with it. Accordingly, the temperature drop of the processing liquid supplied to the substrate surface can be suppressed or prevented, and the temperature of the processing liquid on the substrate surface can be kept substantially uniform. Therefore, the processing with the processing liquid can be performed on the entire surface of the substrate at a uniform processing speed.

  The substrate processing apparatus according to an embodiment of the present invention includes, as described in claim 2, a substrate rotating means (9) for rotating the substrate held by the substrate holding means about a predetermined rotation axis. Further, the processing liquid nozzle discharges the processing liquid toward a central portion of the substrate surface rotated by the substrate rotating means, and the vapor nozzle is other than the central portion on the substrate surface rotated by the substrate rotating means. The steam is discharged toward the predetermined region (M).

According to this configuration, the high-temperature treatment liquid is supplied to the central portion of the substrate surface, and the vapor is supplied to a predetermined region other than the central portion on the substrate surface. The high-temperature processing liquid supplied to the center portion of the substrate surface receives a centrifugal force due to the rotation of the substrate and flows from the center portion toward the peripheral edge, and the substrate is deprived of heat in the process of flowing on the substrate surface.
On the other hand, since steam is supplied to a predetermined region other than the central portion on the substrate surface, heat is applied from the steam to the processing liquid flowing in the region other than the central portion on the substrate surface. Therefore, the liquid temperature of the processing liquid in a predetermined region other than the central portion on the substrate surface can be maintained at, for example, substantially the same temperature as the processing liquid at the central portion of the substrate. That is, the temperature of the processing liquid on the substrate surface can be distributed substantially uniformly throughout the entire area. Thereby, the process by a process liquid can be more uniformly performed with respect to the whole region of the substrate surface.

  Further, the substrate processing apparatus according to another embodiment of the present invention includes a substrate rotating means (9) for rotating a substrate held by the substrate holding means around a predetermined rotation axis, and the processing liquid nozzle on the substrate surface. Treatment liquid nozzle moving means (34) for moving along the substrate surface, vapor nozzle moving means (39) for moving the vapor nozzle along the substrate surface, and vapor from the vapor nozzle on the substrate surface. The treatment liquid nozzle moving means and the vapor are so arranged that the distance from the rotation axis of the supply position is larger than the distance from the rotation axis of the supply position of the high temperature treatment liquid from the treatment liquid nozzle on the substrate surface. It further includes movement control means (30) for controlling movement of the nozzle movement means.

  In this case, the substrate is rotated and the supply position of the processing liquid on the substrate surface is moved, so that the high temperature processing liquid discharged from the processing liquid nozzle can be directly supplied to the entire area of the substrate surface. In addition, since the vapor supply position on the substrate surface is located outward in the radial direction of the substrate relative to the treatment liquid supply position on the substrate surface, the substrate surface receives the centrifugal force due to the rotation of the substrate and the substrate surface is Heat from the steam can be applied to the treatment liquid flowing toward the surface. For this reason, the temperature of the processing liquid on the substrate surface is distributed substantially uniformly in almost the entire region to which the processing liquid is supplied. Thereby, the process by a process liquid can be more uniformly performed with respect to the whole region of the substrate surface.

The invention according to claim 3 further includes control means (30) for discharging vapor from the vapor nozzle in parallel with discharge of the processing liquid from the processing liquid nozzle. It is.
According to this configuration, the steam from the steam nozzle is discharged in parallel with the discharge of the processing liquid from the processing liquid nozzle. Therefore, when the high-temperature processing liquid is supplied to the substrate surface, the vapor pressure around the substrate can be kept high, and for example, it can be kept in a saturated state. Thereby, since evaporation of the liquid contained in the processing liquid supplied to the substrate surface can be more effectively suppressed, it is possible to effectively suppress the temperature drop of the processing liquid due to the diffusion of heat of vaporization.

According to a fourth aspect of the present invention, when the processing liquid discharged from the processing liquid nozzle is a chemical liquid, the vapor nozzle preferably discharges a vapor of a solvent of the chemical liquid. Thereby, since the vapor pressure of the solvent around the substrate can be kept high, evaporation of the treatment liquid can be more effectively suppressed.
The invention according to claim 5 includes a liquid flow pipe (18) through which the same kind of liquid as the liquid contained in the treatment liquid flows, an inert gas flow pipe (19) through which an inert gas flows, and the liquid flow. A heating means (20) for heating and evaporating the liquid flowing through the pipe to generate vapor; and connected to the liquid flow pipe and the inert gas flow pipe; The mixing part (15) which mixes the inert gas from an active gas distribution pipe, and the steam supply pipe (16) which supplies the vapor | steam produced | generated by the said mixing part to the said steam nozzle. 5. The substrate processing apparatus according to claim 4.

  According to this configuration, the same type of liquid as the liquid contained in the processing liquid is heated by the heating unit, so that vapor of the liquid is generated. And the vapor | steam which should be supplied to a board | substrate can be produced | generated by mixing the generated vapor | steam and inert gas (carrier gas) in a mixing part. Therefore, the steam to be supplied to the substrate can be supplied to the steam nozzle with a relatively simple configuration.

A sixth aspect of the present invention is the substrate processing apparatus according to the fifth aspect, further comprising a liquid flow rate adjusting means (21) for adjusting a flow rate of the liquid flowing through the liquid flow pipe.
According to this configuration, the concentration of the steam discharged from the steam nozzle can be changed by adjusting the flow rate of the liquid flowing through the liquid flow pipe by the liquid flow rate adjusting means. Thereby, the vapor | steam amount contained in the area | region of the circumference | surroundings of a board | substrate can be changed. Moreover, the change of the amount of vapor | steam contained in the area | region around a board | substrate can be implement | achieved by a comparatively simple structure.

The invention according to claim 7 is the substrate processing apparatus according to claim 5 or 6, further comprising a gas flow rate adjusting means (23) for adjusting a flow rate of the inert gas flowing through the inert gas flow pipe. is there.
According to this configuration, the discharge flow rate of the steam discharged from the steam nozzle can be changed by adjusting the flow rate of the inert gas flowing through the inert gas flow pipe. Further, the pressure of the atmosphere around the substrate can be adjusted by adjusting the flow rate of the inert gas. Since the amount of saturated vapor contained in the atmosphere depends on the pressure of the atmosphere, for example, the atmosphere around the substrate can be kept saturated by adjusting the flow rate of the inert gas.

  The invention according to claim 8 is in parallel with the cup (8) for accommodating the substrate holding means, the exhaust means (28) for exhausting the atmosphere in the cup, and the discharge of steam from the steam nozzle. The exhaust flow rate adjusting mechanism (29) for adjusting the exhaust flow rate by the exhaust means so as to reduce or stop the exhaust flow rate of the atmosphere in the cup. The substrate processing apparatus according to the item.

According to this configuration, during the discharge of the steam by the steam nozzle, the exhaust flow rate from the inside of the cup is reduced or stopped, so that the steam discharged from the steam nozzle stays in the cup, and the atmosphere in the cup is saturated. Easy to keep.
According to the ninth aspect of the present invention, a substrate holding step of holding the substrate (W) on the substrate holding means (4), and a treatment liquid having a temperature higher than normal temperature is supplied to the substrate surface held by the substrate holding means. A substrate processing comprising: a processing liquid supply step (S4) to be performed; and a vapor supply step (S3) for supplying vapor of the liquid contained in the processing liquid to the substrate surface in parallel with the processing liquid supply step Is the method.

According to this method, the same function and effect as those described in relation to the invention of claim 1 can be achieved.
In addition, as described in claim 10, the vapor supply step may be started before the treatment liquid supply step. In this case, for example, the supply of the processing liquid to the substrate surface can be started in a state where the atmosphere around the substrate is saturated. Therefore, evaporation of the liquid can be suppressed immediately after the treatment liquid is supplied.

It is sectional drawing which shows typically the structure of the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a block diagram which shows the electric constitution of the substrate processing apparatus shown in FIG. It is process drawing which shows an example of the process in the substrate processing apparatus shown in FIG. It is sectional drawing which shows typically the structure of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. FIG. 5 is a block diagram showing an electrical configuration of the substrate processing apparatus shown in FIG. 4. It is an illustration top view showing movement of SC1 nozzle and a steam nozzle during supply of high temperature SC1 and water vapor.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view schematically showing a configuration of a substrate processing apparatus 1 according to one embodiment (first embodiment) of the present invention. The substrate processing apparatus 1 has an SC1 (ammonia hydrogen peroxide solution) as an example of a chemical solution with respect to the surface on the device formation region side of a semiconductor wafer W (hereinafter simply referred to as “wafer W”) as an example of a substrate. This is a single wafer type apparatus for performing a cleaning process (for example, a particle removal process). SC1 is ammonia hydrogen peroxide water (APM), and ammonia, hydrogen peroxide water and water are mixed at a predetermined mixing ratio (for example, ammonia: hydrogen peroxide water: water = 1: 4: It is a chemical solution prepared by mixing in 20). The solvent of this chemical solution is water.

  The substrate processing apparatus 1 holds a wafer W substantially horizontally in a processing chamber 3 partitioned by a partition wall 2 and rotates the wafer W about a substantially vertical rotation axis C passing through the center of the spin chuck (substrate). Holding means) 4, an SC1 nozzle (treatment liquid nozzle) 5 for supplying SC1 toward the surface (upper surface) of the wafer W held on the spin chuck 4, and the wafer W held on the spin chuck 4. A steam nozzle 6 for supplying water vapor to the surface, a DIW nozzle 7 for supplying DIW (deionized water) to the surface of the wafer W held on the spin chuck 4, and a cup 8 for housing the spin chuck 4 It has.

  The spin chuck 4 includes a spin motor (substrate rotating means) 9, a disk-shaped spin base 11 that is rotated around the vertical axis by the rotational driving force of the spin motor 9, and a plurality of positions around the periphery of the spin base 11. A plurality of clamping members 12 are provided at intervals and for clamping the wafer W in a substantially horizontal posture. As a result, the spin chuck 4 rotates the spin base 11 by the rotational driving force of the spin motor 9 in a state where the wafer W is held by the plurality of holding members 12, thereby bringing the wafer W into a substantially horizontal posture. In this state, it can be rotated around the rotation axis C together with the spin base 11.

Note that the spin chuck 4 is not limited to a sandwiching type, and for example, the wafer W is held in a horizontal posture by vacuum suction on the back surface of the wafer W, and further rotated around a vertical rotation axis in that state. Thus, a vacuum chucking type (vacuum chuck) that can rotate the held wafer W may be employed.
The SC1 nozzle 5 is, for example, a straight nozzle that discharges high-temperature (for example, 80 ° C.) SC1 in a continuous flow state, and the discharge port is directed near the rotation center of the wafer W (center portion) above the spin chuck 4. Are fixedly arranged. An SC1 supply pipe 13 to which high-temperature SC1 from a high-temperature SC1 supply source is supplied is connected to the SC1 nozzle 5. An SC1 valve 14 for switching the discharge / discharge stop of SC1 from the SC1 nozzle 5 is interposed in the middle portion of the SC1 supply pipe 13.

  The vapor nozzle 6 has a discharge port at a predetermined intermediate position M between the rotation axis C and the peripheral edge of the wafer W (for example, the radius of the wafer W from the rotation axis C of the wafer W) above the spin chuck 4. It is fixedly arranged toward the position corresponding to half the distance. A steam supply pipe 16 extending from the mixing unit 15 is connected to the steam nozzle 6. In the middle of the steam supply pipe 16, a steam valve 17 for switching the discharge / stop of steam is interposed. A DIW flow pipe (liquid flow pipe) 18 and a nitrogen gas flow pipe (inert gas flow pipe) 19 are connected to the mixing unit 15.

  DIW is supplied to the DIW distribution pipe 18 from a DIW supply source. A heater (heating means) 20, a DIW flow rate adjusting valve (liquid flow rate adjusting means) 21, and a first DIW valve 22 are interposed in this order from the mixing unit 15 side in the middle of the DIW flow pipe 18. The first DIW valve 22 is for opening and closing the DIW flow pipe 18. The DIW flow rate adjustment valve 21 adjusts the flow rate of DIW flowing through the DIW flow pipe 18. The temperature of the heater 20 is controlled to a high temperature at which DIW flowing through the DIW flow pipe 18 can be instantaneously evaporated. Therefore, DIW flowing through the DIW flow pipe 18 is heated by the heater 20 and evaporated. Thereby, water vapor is generated in the DIW flow pipe 18.

  Nitrogen gas is supplied to the nitrogen gas flow pipe 19 from a nitrogen gas supply source. This nitrogen gas is used as a carrier gas for water vapor. A nitrogen gas flow rate adjusting valve (gas flow rate adjusting means) 23 and a nitrogen gas valve 24 are interposed in this order from the mixing unit 15 side in the middle of the nitrogen gas flow pipe 19. The nitrogen gas valve 24 is for opening and closing the nitrogen gas flow pipe 19. The nitrogen gas flow rate adjusting valve 23 is for adjusting the flow rate of nitrogen gas flowing through the nitrogen gas flow pipe 19.

The mixing unit 15 mixes the water vapor from the DIW flow pipe 18 and the nitrogen gas from the nitrogen gas flow pipe 19 to obtain water vapor (accurately in a predetermined concentration (water vapor concentration in the mixed gas of water vapor and nitrogen gas)). Prepares the mixed gas), and supplies the steam after the preparation to the steam supply pipe 16.
When the first DIW valve 22 and the nitrogen gas valve 24 are opened, water vapor generated by heating DIW and nitrogen gas from the nitrogen gas flow pipe 19 are supplied to the mixing unit 15 at a predetermined mixing ratio. As a result, a predetermined concentration of water vapor is generated (prepared) in the mixing unit 15. When the steam valve 17 is opened while the first DIW valve 22 and the nitrogen gas valve 24 are opened, the water vapor adjusted by the mixing unit 15 is supplied to the steam nozzle 6 through the steam supply pipe 16. It is discharged from.

  By changing the opening degree of the DIW flow rate adjustment valve 21, the concentration of water vapor discharged from the steam nozzle 6 can be changed. Thereby, the amount of water vapor (water vapor pressure) contained in the cup 8 can be adjusted. The opening degree of the DIW flow rate adjusting valve 21 is set to an opening degree that maintains the atmosphere in the cup 8 in a saturated state (a state in which the water vapor contained in the atmosphere has reached the saturated water vapor amount).

  The DIW nozzle 7 is, for example, a straight nozzle that discharges DIW in a continuous flow state. The DIW nozzle 7 is fixedly disposed above the spin chuck 4 with its discharge port directed toward the vicinity of the rotation center (central portion) of the wafer W. ing. The DIW nozzle 7 is connected to a DIW supply pipe 25 to which DIW at normal temperature (for example, 22 to 23 ° C.) is supplied from a DIW supply source. A second DIW valve 26 for switching between discharging / stopping DIW from the DIW nozzle 7 is interposed in the middle of the DIW supply pipe 25.

  The cup 8 is for processing SC1 and DIW after being used for processing the wafer W, and is formed in a bottomed cylindrical container shape. An exhaust hole (not shown) for exhausting the atmosphere in the cup 8 is formed at the bottom of the cup 8. An exhaust pipe (exhaust means) 28 is connected to the exhaust hole. The exhaust pipe 28 extends outward from the processing chamber 3, and its downstream end is connected to an exhaust facility (not shown). An exhaust flow rate adjusting mechanism 29 is interposed in the middle of the exhaust pipe 28 in order to adjust the flow rate of the exhaust gas flowing through the exhaust pipe 28. As this exhaust flow rate adjusting mechanism 29, for example, an exhaust damper that changes the flow rate of the exhaust pipe 28 by driving a rotary actuator (motor, air cylinder, etc.) can be exemplified. In addition, as the exhaust flow rate adjusting mechanism 29, a flow rate adjusting valve can be exemplified.

FIG. 2 is a block diagram showing an electrical configuration of the substrate processing apparatus 1.
The substrate processing apparatus 1 includes a control device 30 having a configuration including a microcomputer. The control device 30 includes a spin motor 9, an SC1 valve 14, a first DIW valve 22, a steam valve 17, a second DIW valve 26, a DIW flow rate adjustment valve 21, a heater 20, a nitrogen gas valve 24, a nitrogen gas flow rate adjustment valve 23, and an exhaust. A flow rate adjusting mechanism 29 or the like is connected as a control target.

FIG. 3 is a process diagram showing an example of processing in the substrate processing apparatus 1.
The wafer W to be processed is loaded into the processing chamber 3 by a transfer robot (not shown) (step S1), and is held by the spin chuck 4 with its surface facing upward.
After the wafer W is held by the spin chuck 4, the control device 30 drives the spin motor 9 to start rotating the wafer W (step S2). When the rotation speed of the wafer W reaches a predetermined liquid processing speed (for example, 1000 rpm), the control device 30 opens the steam valve 17 and discharges water vapor from the steam nozzle 6. The water vapor from the vapor nozzle 6 is supplied to an intermediate position M on the surface of the wafer W. (S3: Water vapor supply). Further, the control device 30 controls the exhaust flow rate adjusting mechanism 29 to reduce the flow rate of the exhaust gas flowing through the exhaust pipe 28 (for example, about 1/5 of the normal time). Therefore, most of the water vapor supplied to the surface of the wafer W remains in the cup 8. The cup 8 is filled with an atmosphere containing water vapor.

  When a predetermined time (for example, 5 seconds) elapses from the start of the discharge of water vapor from the steam nozzle 6, the controller 30 opens the SC1 valve 14, and the high temperature (for example, 40 to 80 ° C., preferably 80) from the SC1 nozzle 5. C.) is discharged. The high-temperature SC1 from the SC1 nozzle 5 is supplied to the central portion of the wafer W surface. (S4: supply of high temperature SC1). At the start of the discharge of SC1, the atmosphere in the cup 8 is almost saturated due to the discharge of water vapor from the steam nozzle 6.

  The high-temperature SC1 discharged from the SC1 nozzle 5 is supplied to the vicinity of the rotation center (center portion) of the surface of the wafer W. The SC 1 supplied to the surface of the wafer W receives a centrifugal force due to the rotation of the wafer W, and the surface of the wafer W expands from the center to the periphery while being deprived of heat by the wafer W. In this step S4, since the discharge of water vapor from the steam nozzle 6 is continued in parallel with the discharge of SC1 from the SC1 nozzle 5, the saturated state of the atmosphere in the cup 8 is maintained. Therefore, the water contained in the high-temperature SC1 supplied to the surface of the wafer W hardly evaporates in the process of flowing on the surface of the wafer W.

  On the other hand, the water vapor supplied to the intermediate position M on the surface of the wafer W moves toward the periphery of the wafer W under the centrifugal force generated by the rotation of the wafer W. Since the water vapor is very hot, heat from the water vapor is applied to SC1 that is radially outward from the intermediate position M on the surface of the wafer W. Therefore, the temperature of SC1 existing in the region from the intermediate position M on the surface of the wafer W to the periphery is kept high. Thereby, the liquid temperature of SC1 on the surface of the wafer W becomes substantially the same temperature (high temperature) over the entire surface of the wafer W.

By the process using SC1, foreign matters such as particles adhering to the surface of the wafer W are removed from the entire surface of the wafer W.
When a predetermined SC1 processing time has elapsed from the start of SC1 supply by the SC1 nozzle 5, the control device 30 closes the SC1 valve 14 and stops the discharge of SC1 from the SC1 nozzle 5. Further, the control device 30 closes the steam valve 17 at the same timing as the closing of the SC1 valve 14. Thereby, the discharge of water vapor from the steam nozzle 6 is stopped.

Further, the control device 30 controls the exhaust flow rate adjusting mechanism 29 to return the flow rate of the exhaust gas flowing through the exhaust pipe 28 from a predetermined low flow rate to a normal flow rate. Thereby, water vapor is exhausted from the inside of the cup 8.
Further, the control device 30 opens the second DIW valve 26 and discharges DIW at room temperature from the DIW nozzle 7 toward the vicinity of the center of rotation (center portion) of the surface of the wafer W. The DIW supplied to the surface of the wafer W receives centrifugal force due to the rotation of the wafer W and flows toward the periphery of the wafer W, and the SC1 adhering to the upper surface of the wafer W is washed away by this DIW (S5: rinse) processing).

When a predetermined rinsing process time has elapsed from the start of DIW ejection by the DIW nozzle 7, the control device 30 closes the second DIW valve 26 and stops the supply of DIW to the wafer W.
Thereafter, the control device 30 accelerates the spin chuck 4 to a spin drying rotational speed (for example, about 2500 rpm). Thereby, DIW adhering to the surface of the wafer W after rinsing with DIW is shaken off by centrifugal force, and the wafer W is dried (S6: spin dry).

When the spin dry process is performed for a predetermined time, the rotation of the spin chuck 4 is stopped (step S7). Thereafter, the wafer W is unloaded from the processing chamber 3 by a transfer robot (not shown) (step S8).
As described above, according to this embodiment, water vapor is supplied to the wafer W when the high-temperature SC1 is supplied to the surface of the wafer W. The water vapor supplied to the surface of the wafer W stays in the cup 8, and the atmosphere in the cup 8 becomes saturated. Under a saturated atmosphere, water vapor cannot enter the atmosphere and water does not evaporate. Therefore, when the atmosphere in the cup 8 is kept saturated, the water contained in the high-temperature SC1 supplied to the surface of the wafer W flows on the surface of the wafer W without evaporating. Therefore, there is no loss of heat (that is, heat of vaporization) accompanying the evaporation of water contained in SC1.

  Further, high-temperature SC1 is supplied to the center of the surface of the wafer W, and water vapor is supplied to a predetermined intermediate position M on the surface of the wafer W. The high-temperature SC1 supplied to the central portion of the wafer W surface flows from the central portion toward the periphery under the centrifugal force generated by the rotation of the wafer W, and the wafer W is deprived of heat in the process of flowing on the wafer W surface. . On the other hand, since water vapor is supplied to the intermediate position M on the surface of the wafer W, heat is applied from the water vapor to the SC1 flowing on the surface of the wafer W. Therefore, the temperature of SC1 in the region from the intermediate position M to the peripheral edge is kept high on the surface of wafer W, and SC1 on the surface of wafer W is distributed at substantially the same temperature (high temperature) in the entire region. Thereby, the process by SC1 can be uniformly performed with respect to the whole surface of the wafer W surface.

  FIG. 4 is a cross-sectional view schematically showing the configuration of the substrate processing apparatus 31 according to the second embodiment of the present invention. In the second embodiment, parts corresponding to those shown in the embodiment (first embodiment) shown in FIGS. 1 to 3 are denoted by the same reference numerals as those in the first embodiment, and will be described. Is omitted. Further, the substrate processing apparatus 31 shown in FIG. 4 is different from the substrate processing apparatus 1 according to the first embodiment in that the SC1 nozzle 5 and the vapor nozzle 6 which are fixedly arranged with respect to the spin chuck 4 are used. Thus, an SC1 nozzle (treatment liquid nozzle) 35 and a vapor nozzle 36 in the form of a so-called scan nozzle are employed.

  The SC1 nozzle 35 is, for example, a straight nozzle that discharges high-temperature SC1 in a continuous flow state, and is attached to the tip of the first arm 32 that extends substantially horizontally with its discharge port facing downward. . A base end portion of the first arm 32 is supported by an upper end portion of a first support shaft 33 extending substantially vertically on the side of the cup 8. A first arm swing drive mechanism (processing liquid nozzle moving means) 34 including a motor (not shown) is coupled to the first support shaft 33. The first arm 32 can be swung above the spin chuck 4 by inputting a rotational force from the first arm swing driving mechanism 34 to the first support shaft 33 and rotating the first support shaft 33. it can. The tip of the SC1 supply pipe 13 is connected to the SC1 nozzle 35.

  SC1 can be supplied to the surface of the wafer W by discharging SC1 from the SC1 nozzle 35 in a state where the wafer W is held on the spin chuck 4 and the SC1 nozzle 35 is disposed above the wafer W. When the SC1 is supplied from the SC1 nozzle 35 to the surface of the wafer W, the SC1 supply position on the surface of the wafer W is rotated by rotating the first arm 32 within a predetermined angular range. It can be moved while drawing an arc-shaped trajectory within a range from the center to the periphery of the wafer W.

  The steam nozzle 36 is attached to the tip of a second arm 37 that extends substantially horizontally with its discharge port facing downward. A base end portion of the second arm 37 is supported by an upper end portion of a second support shaft 38 extending substantially vertically on the side of the cup 8. A second arm swing drive mechanism (steam nozzle moving means) 39 including a motor (not shown) is coupled to the second support shaft 38. The second arm 37 can be swung above the spin chuck 4 by inputting a rotational force from the second arm swing driving mechanism 39 to the second support shaft 38 and rotating the second support shaft 38. it can. The tip of the steam supply pipe 16 is connected to the steam nozzle 36.

  Water vapor can be supplied to the surface of the wafer W by discharging the water vapor from the vapor nozzle 36 in a state where the wafer W is held on the spin chuck 4 and the vapor nozzle 36 is disposed above the wafer W. When the water vapor is supplied from the vapor nozzle 36 to the surface of the wafer W, the second arm 37 is swung within a predetermined angle range, so that the water supply position on the surface of the wafer W is set to the middle of the wafer W. It can be moved while drawing an arc-shaped locus within a range from the position M to the outside of the wafer W through the periphery of the wafer W.

  FIG. 5 is a block diagram showing an electrical configuration of the substrate processing apparatus shown in FIG. The control device 30 includes a spin motor 9, a first arm swing drive mechanism 34, a second arm swing drive mechanism 39, an SC1 valve 14, a first DIW valve 22, a steam valve 17, a second DIW valve 26, and a DIW flow rate adjustment valve. 21, a heater 20, a nitrogen gas valve 24, a nitrogen gas flow rate adjustment valve 23, an exhaust flow rate adjustment mechanism 29, and the like are connected as control targets. In the second embodiment, processing similar to that shown in the process diagram shown in FIG. 3 is performed.

  FIG. 6 is a schematic plan view showing the movement of the SC1 nozzle 35 and the steam nozzle 36 during the supply of the high-temperature SC1 and the steam. In step S4 (high-temperature SC1 supply) in FIG. 3, during the discharge of the high-temperature SC1 from the SC1 nozzle 35 and the discharge of the steam from the steam nozzle 36, the control device 30 includes the first arm swing drive mechanism 34 and the first By controlling the two-arm swing drive mechanism 39, the supply position Q of the water vapor from the vapor nozzle 36 on the surface of the wafer W is more outside the radial direction of the wafer W than the supply position of SC1 from the SC1 nozzle 35 on the surface of the wafer W. The SC1 nozzle 35 and the steam nozzle 36 are moved in a state of being located in the direction.

  The SC1 supply position P on the surface of the wafer W moves along an arc-shaped (substantially linear) locus PP centered on the first support shaft 33 (see FIG. 4). The locus PP extends substantially along the rotational radius direction of the wafer W. Further, the water vapor supply position Q on the surface of the wafer W moves along an arc-shaped (substantially linear) locus QQ centered on the second support shaft 38 (see FIG. 4). The trajectory QQ extends substantially along the trajectory PP.

  Specifically, when the SC1 supply position P on the wafer W surface is on the rotation center (rotation axis C), the water vapor supply position Q on the wafer W surface is the intermediate position M (rotation on the wafer W). (The portion between the center and the periphery) (shown by a solid line in FIG. 6). The control device 30 controls the first arm swing drive mechanism 34 and the second arm swing drive mechanism 39, swings the first arm 32 and the second arm 37, respectively, and causes the SC1 nozzle 35 and the steam nozzle 36 to move. The wafer W is moved outward in the rotational radius direction. For example, the swinging of the first and second arms 32 and 37 may be controlled so that the moving speed of the water vapor supply position Q is approximately half the moving speed of the SC1 supply position P.

  When the supply position P of SC1 reaches the peripheral edge of the wafer W due to the swing of the first arm 32 (shown by a two-dot chain line in FIG. 6), the control device 30 continues the state in which the SC1 valve 14 is opened, The first arm swing drive mechanism 34 is driven to swing the first arm 32, and the SC1 nozzle 35 is returned upward near the center of rotation of the wafer W surface. In synchronization with the reversing operation of the first arm 32, the control device 30 drives the second arm swing drive mechanism 39 and swings the second arm 37 while continuing the state in which the steam valve 17 is opened. Then, the vapor nozzle 36 is returned to above the intermediate position M on the surface of the wafer W. Also in this case, for example, the swinging of the first and second arms 32 and 37 is preferably controlled so that the moving speed of the water vapor supply position Q is approximately half of the moving speed of the SC1 supply position P.

In this way, the SC1 supply position P and the water vapor supply position Q reciprocate substantially along the radius of the wafer W on the upper surface of the wafer W, and SC1 and water vapor are supplied in parallel in the process. be able to.
According to the second embodiment, since the wafer W is rotated and the SC1 supply position P on the surface of the wafer W is moved, the SC1 discharged from the SC1 nozzle 35 is directly supplied to the entire surface of the wafer. Can do. Further, the water vapor supply position on the wafer W surface is positioned outward in the radial direction of the wafer W relative to the SC1 supply position on the wafer W surface. Heat from water vapor can be applied to SC1 flowing toward the periphery. Therefore, SC1 can be supplied at a substantially uniform temperature over the entire surface of the wafer W. Thereby, the process by SC1 can be applied more uniformly to the entire surface of the wafer W.

As mentioned above, although two embodiment of this invention was described, this invention can also be implemented with another form.
For example, in the first embodiment described above, the vapor nozzle 6 is configured so that the discharge port is disposed toward the predetermined intermediate position M between the rotation center and the peripheral edge of the wafer W. The discharge port is arranged toward a region near the periphery of the wafer W (for example, an annular region having a width of 1 to 4 mm from the peripheral edge of the wafer W), and the water vapor discharged from the vapor nozzle 6 is transferred to the surface of the wafer W. It is good also as a structure supplied to a peripheral region.

  In the second embodiment described above, the vapor nozzle 36 is always positioned outside the SC1 nozzle 35 in the rotational radius direction of the wafer W in step S3 (water vapor supply) and step S4 (high temperature SC1 supply) in FIG. As described above, the example in which the first arm swing drive mechanism 34 and the second arm swing drive mechanism 39 are controlled is shown, but this is only an example. That is, when the trajectory PP of the SC1 supply position from the SC1 nozzle 35 and the trajectory QQ of the steam from the vapor nozzle 36 do not follow each other, the control device 30 determines the supply position of the water vapor from the vapor nozzle 36 on the wafer W surface. The first arm swing drive mechanism 34 and the second arm so that the distance from the rotation axis C is always larger than the distance from the rotation axis C at the supply position of the hot SC1 from the SC1 nozzle 35 on the surface of the wafer W. The swing drive mechanism 39 may be controlled.

  Further, in each of the above-described embodiments, an example in which the flow rate of exhaust gas from the cup 8 is reduced during the discharge of water vapor by the steam nozzles 6 and 36 is shown. The exhaust pipe 28 may be closed and the exhaust from the cup 8 may be stopped. In this case, since all the water vapor discharged from the steam nozzles 6 and 36 remains in the cup 8, the atmosphere in the cup 8 is easily maintained in a saturated state.

  Moreover, the discharge flow rate of the water vapor discharged from the steam nozzle 6 can be changed by adjusting the opening degree of the nitrogen gas flow rate adjusting valve 23. Therefore, when the exhaust from the cup 8 is stopped / the exhaust flow rate is reduced during the discharge of water vapor by the steam nozzles 6, 36, the atmosphere in the cup 8 is controlled by adjusting the opening of the nitrogen gas flow rate adjustment valve 23. The pressure can be adjusted. Since the amount of saturated water vapor contained in the atmosphere depends on the pressure of the atmosphere, it is possible to keep the atmosphere in the cup 8 in a saturated state by adjusting the flow rate of nitrogen gas.

Further, the above-described embodiments may be modified so that the exhaust flow rate is not reduced / exhaust is not stopped while the steam nozzles 6 and 36 discharge steam.
Moreover, in each above-mentioned embodiment, although nitrogen gas was illustrated as inert gas, clean air and other types of inert gas can also be employ | adopted.
Moreover, in each above-mentioned embodiment, SC1 was illustrated as a chemical | medical solution, However, Chemical liquids other than SC1 can also be used. For example, other chemical solutions include SC2 (hydrochloric acid / hydrogen peroxide mixture), SPM (sulfuric acid / hydrogen peroxide mixture), hydrofluoric acid, buffered hydrofluoric acid (Buffered HF: hydrofluoric acid and fluoride) A mixed solution with ammonium) and aqueous ammonia can be exemplified. When these chemical liquids are employed, water vapor, that is, water vapor, which is a solvent for these chemical liquids, is used as the vapor discharged from the vapor nozzles 6 and 36.

Moreover, a polymer removal liquid can also be employ | adopted as a chemical | medical solution. In this case, since the solvent of the polymer removal solution is alcohol, it is preferable to use the alcohol vapor as the solvent discharged from the vapor nozzles 6 and 36.
Moreover, not only a chemical | medical solution but DIW (deionized water) can also be used as a high temperature processing liquid. Of course, in this case, evaporation of the high-temperature DIW can be suppressed by supplying the water vapor in parallel.

  In the above-described embodiment, the example in which the periphery of the substrate W is maintained at the saturated water vapor pressure is described. However, the periphery of the substrate W does not necessarily need to be saturated. That is, when the processing liquid is supplied to the substrate surface, the vapor pressure of the liquid contained in the processing liquid is present around the substrate, so that the vapor pressure of the liquid increases. The evaporation of the liquid can be suppressed. Thereby, the temperature fall resulting from vaporization of a process liquid can be suppressed.

  In addition, various design changes can be made within the scope of matters described in the claims.

1 substrate processing equipment 4 spin chuck (substrate holding means)
5 SC1 nozzle (treatment liquid nozzle)
6 Steam nozzle 8 Cup 9 Spin motor (substrate rotation means)
15 Mixing Unit 16 Steam Supply Pipe 18 DIW Distribution Pipe (Liquid Distribution Pipe)
19 Nitrogen gas distribution pipe (inert gas distribution pipe)
20 Heater (heating means)
21 DIW flow control valve (liquid flow control means)
23 Nitrogen gas flow control valve (gas flow control means)
28 Exhaust pipe (exhaust means)
29 Exhaust flow rate adjusting mechanism 30 Control device 31 Substrate processing device 34 First arm swing drive mechanism (processing liquid nozzle moving means)
35 SC1 nozzle (treatment liquid nozzle)
36 Steam nozzle 39 Second arm swing drive mechanism (steam nozzle moving means)
M Intermediate position (predetermined area other than the center)
W wafer

Claims (10)

Substrate holding means for holding the substrate;
A processing liquid nozzle that discharges a processing liquid at a temperature higher than normal temperature to the substrate surface held by the substrate holding means,
A substrate processing apparatus, comprising: a vapor nozzle that discharges a vapor of a liquid contained in the processing liquid to a substrate surface held by the substrate holding unit. A substrate rotating means for rotating the substrate held by the substrate holding means around a predetermined rotation axis;
The processing liquid nozzle discharges the processing liquid toward the center of the substrate surface rotated by the substrate rotating means,
The substrate processing apparatus according to claim 1, wherein the vapor nozzle discharges vapor toward a predetermined region other than a central portion on a substrate surface rotated by the substrate rotating unit.   The substrate processing apparatus according to claim 1, further comprising a control unit that discharges vapor from the vapor nozzle in parallel with discharge of the treatment liquid from the treatment liquid nozzle. The processing liquid discharged from the processing liquid nozzle is a chemical liquid,
The substrate processing apparatus according to claim 1, wherein the vapor nozzle discharges a vapor of a solvent of the chemical solution. A liquid distribution pipe through which the same kind of liquid as the liquid contained in the treatment liquid flows;
An inert gas flow pipe through which the inert gas flows;
Heating means for generating vapor by heating and evaporating the liquid flowing through the liquid circulation pipe;
A mixing unit connected to the liquid flow pipe and the inert gas flow pipe to mix the liquid from the liquid flow pipe and the inert gas from the inert gas flow pipe;
The substrate processing apparatus as described in any one of Claims 1-4 containing the vapor | steam supply pipe | tube which supplies the vapor | steam produced | generated by the said mixing part to the said vapor | steam nozzle.   6. The substrate processing apparatus according to claim 5, further comprising a liquid flow rate adjusting means for adjusting a flow rate of the liquid flowing through the liquid flow pipe.   The substrate processing apparatus according to claim 5 or 6, further comprising a gas flow rate adjusting means for adjusting a flow rate of the inert gas flowing through the inert gas flow pipe. A cup for accommodating the substrate holding means;
Exhaust means for exhausting the atmosphere in the cup;
An exhaust flow rate adjusting mechanism for adjusting the exhaust flow rate by the exhaust means so as to reduce or stop the exhaust flow rate of the atmosphere in the cup in parallel with the discharge of the steam from the steam nozzle. Item 8. The substrate processing apparatus according to any one of Items 1 to 7. A substrate holding step of holding the substrate on the substrate holding means;
A treatment liquid supply step of supplying a treatment liquid having a temperature higher than room temperature to the substrate surface held by the substrate holding means;
A substrate processing method comprising: a vapor supply step for supplying a vapor of a liquid contained in the treatment liquid to the substrate surface in parallel with the treatment liquid supply step.   The substrate processing method according to claim 9, wherein the vapor supply step is started before the processing liquid supply step.

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