JP2001057334A - Method and device for development processing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To lessen variations in the development processing of a pattern and to enhance the uniformity of the line width of the pattern. SOLUTION: While a developer L is made to discharge from a developer feeding nozzle 86 in a strip shape, the nozzle 86 is made to scan on a substrate W, whereby the developer L is applied on the substrate W subsequent to an exposure of the substrate to perform a development processing on the substrate W. The nozzle 86 discharges the developer L on the substrate W in such a way as to scan on the substrate W more than two times to coat the developer L on the substrate W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing method and a developing apparatus for performing a developing process after exposure on a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art In a resist coating / developing processing system for a photolithography step in a semiconductor device manufacturing process, a resist coating processing for forming a resist film on the surface of a semiconductor wafer and an exposure of the wafer after the resist coating are performed. After the processing, development processing for developing the wafer is performed. The resist coating processing and the development processing are performed by a resist coating processing unit and a development processing unit mounted on the system, respectively.

The development processing unit includes a spin chuck for holding and rotating a semiconductor wafer by suction, and a developer supply nozzle for supplying a developer to the semiconductor wafer on the spin chuck. The developer supply nozzle used in the conventional development processing unit has a long nozzle body having a length longer than the diameter of the semiconductor wafer, and a number of discharge ports are arranged in a line on the bottom surface. Is used. In order to apply a developing solution onto a semiconductor wafer using such a developing solution supply nozzle, first, the developing solution supply nozzle is moved to a position overlapping the diameter of the semiconductor wafer above the semiconductor wafer held by the spin chuck. Moving the semiconductor wafer into the space inside the developer supply nozzle at a predetermined pressure and discharging the developer from the discharge port to the semiconductor wafer while moving the semiconductor wafer at least one time.
/ 2 turns. Thereby, a uniform developer paddle is formed on the entire surface of the semiconductor wafer.

[0004]

However, when the developing solution is applied in this manner, the rotation speed is different between the central portion and the peripheral portion of the semiconductor wafer, and the central portion has a higher rotational speed than the peripheral portion. Because of the slowness, the supply amount of the developer is larger in the central part than in the peripheral part. As a result, the developing process does not proceed uniformly at the central portion and the peripheral portion of the wafer, and the uniformity of the line width of the circuit pattern may be impaired.

In order to eliminate such a difference in the amount of developing solution discharged at the center portion and the peripheral portion of the semiconductor wafer, the developing solution is discharged while the developing solution supply nozzle is scanned over the semiconductor wafer to discharge the developing solution onto the semiconductor wafer. Is being adopted. However, in this scanning method, the developing process does not always proceed uniformly between the start and the end of the scan, and the uniformity of the line width of the circuit pattern is not always sufficient. Further, when the developing solution is supplied by such a scanning method, the developing solution is also supplied to the outer portion of the semiconductor wafer because the semiconductor wafer has a circular shape, and the developing solution is wasted. Would.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a developing method and a developing apparatus in which the variation in the developing process is small and the line width is uniform. It is another object of the present invention to provide a developing method and a developing apparatus which can reduce the amount of waste developer.

[0007]

According to a first aspect of the present invention, a developer supply nozzle is provided on a substrate while discharging the developer in a belt shape from a developer supply nozzle. A developing method for applying a developing solution to an exposed substrate and performing a developing process by causing a relative movement between the developing solution supply nozzle and the substrate so as to scan the developing solution. A developing method is provided, wherein a developing solution is applied to a substrate so that a supply nozzle scans the substrate two or more times.

According to a second aspect of the present invention, there is provided a developing apparatus for applying a developing solution to a substrate after an exposure process and performing the developing process, wherein the developing solution is supplied to the substrate in a strip shape. A nozzle, a developer supply mechanism for supplying developer to the developer supply nozzle, and a relative movement between the developer supply nozzle and the substrate such that the developer supply nozzle scans over the substrate. A moving mechanism, and a developer supplied from the developer supply mechanism to the developer supply nozzle such that the developer supply nozzle scans the substrate two or more times while discharging the developer from the developer supply nozzle in a strip shape. And a control mechanism for controlling relative supply by the moving mechanism.

In the first and second aspects of the present invention, the developing solution is applied to the substrate so that the developing solution supply nozzle scans the substrate two or more times. The developer paddle formed in
The effect of stirring by the discharge of the developing solution at the time of the subsequent scanning can be obtained, the developing process can be performed uniformly, and the uniformity of the line width can be improved.

In this case, the relative movement between the developer supply nozzle and the substrate can typically employ a reciprocating movement. In addition, during the second and subsequent scans, the amount of developer used can be reduced by reducing or not discharging the amount of developer. In addition, from the viewpoint of making the supply amount of the developer more uniform, the substrate can be rotated by a predetermined angle before the start of the second and subsequent scans.

According to a third aspect of the present invention, there is provided a developing method for applying a developing solution to a substrate after an exposure process and performing a developing process, wherein a plurality of developing solution storage nozzles are provided in a developing solution supply nozzle. The developing solution is discharged from the developing solution supply nozzle onto the substrate and the developing solution is applied onto the substrate while controlling the amount of the developing solution discharged from the developing solution storage chamber. A development processing method is provided.

According to a fourth aspect of the present invention, there is provided a developing apparatus for performing a developing process by applying a developing solution to a substrate after an exposure process, wherein a plurality of developing solution storages for storing the developing solution therein are provided. A developing solution supply nozzle for discharging the developing solution from the developing solution storage chamber; a moving mechanism for causing relative movement between the developing solution supply nozzle and the substrate; and a plurality of the developing solution supply nozzles. A developer supply mechanism for supplying a developer to each of the developer storage chambers; and a developer supply mechanism for supplying a predetermined amount of the developer from each of the plurality of developer storage chambers of the developer supply nozzle. A control mechanism for controlling the supply of the developing solution to the developing solution storage chamber, wherein the moving mechanism causes relative movement between the developing solution supply nozzle and the substrate, Supply developer on top Developing apparatus is provided, characterized in that.

In the third and fourth aspects of the present invention, the inside of the developer supply nozzle is divided into a plurality of developer storage chambers, and the discharge amount of the developer from these developer storage chambers is controlled. In addition, since the developing solution is discharged from the developing solution supply nozzle onto the substrate, the supply of the developing solution to a portion that does not require the discharging of the developing solution, for example, a portion that is off the substrate can be reduced or stopped. Thus, waste of the developer can be omitted, and the total consumption of the developer can be suppressed.

In this case, while the developer is discharged from the developer supply nozzle in a strip shape, the relative movement between the developer supply nozzle and the substrate is performed so that the developer supply nozzle scans over the substrate. Can be caused. In addition, during this scan, the amount of developer discharged from the developer storage chamber located at a position off the substrate can be reduced or not discharged. Further, from the viewpoint of improving the uniformity of the developing process, the developing solution supply nozzle may scan the substrate twice or more to apply the developing solution onto the substrate.

[0015]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic plan view showing a resist coating and developing system equipped with a developing unit according to an embodiment of the substrate processing apparatus of the present invention, FIG. 2 is a front view thereof, and FIG. 3 is a rear view thereof.

This resist coating and developing system 1
A cassette station 10 which is a transfer station;
A processing station 11 having a plurality of processing units;
An interface unit 12 is provided for transferring a semiconductor wafer (hereinafter simply referred to as a wafer) as an object to be processed between an exposure apparatus (not shown) provided adjacent to the processing station 11.

The cassette station 10 carries a plurality of wafers W, for example, in units of 25 wafers, into a wafer cassette CR, and loads the wafers W from another system into the system, unloads the wafers from the system to another system, The wafer W is transferred between the CR and the processing station 11.

In the cassette station 10,
Puts the wafer cassette CR as shown in FIG.
Plural (four in the figure) on the mounting table 20 along the X direction in the figure
The positioning projections 20a are formed.
The wafer cassette CR moves in and out of each wafer at the position a.
Can be placed in a line with the mouth facing the processing station 11
Has become. In the wafer cassette CR, the wafer W
They are arranged in the vertical direction (Z direction). Also, cassette
The station 10 includes the mounting table 20 and the processing station 1.
1 is provided between the wafer transfer mechanism 21 and the wafer transfer mechanism 21.
The wafer transfer mechanism 21 is moved in the cassette arrangement direction (X direction).
Direction) and the wafer arrangement direction of the wafer W therein (Z direction).
The wafer transfer arm 21a
Any one of the wafers by the wafer transfer arm 21a.
Selective access to Eha cassette CR
ing. Further, the wafer transfer arm 21a moves in the θ direction.
The processing station is configured to be rotatable and will be described later.
Third processing unit group G on the eleventh side ₃Alignment belonging to
Unit (ALIM) and extension unit
(EXT) can also be accessed.

The processing station 11 includes a plurality of processing units for performing a series of steps for performing coating and development on the wafer W. These processing units are arranged at predetermined positions in multiple stages. The wafers W are processed one by one. As shown in FIG. 1, the processing station 11 has a transfer path 22a at the center, in which a main wafer transfer mechanism 22 is provided, and all the processing units are arranged around the transfer path 22a. . The plurality of processing units are divided into a plurality of processing unit groups, and in each processing unit group, a plurality of processing units are arranged in multiple stages along the vertical direction.

As shown in FIG. 3, the main wafer transfer mechanism 22 is provided with a wafer transfer device 46 inside a tubular support 49 so as to be able to move up and down in the vertical direction (Z direction). The cylindrical support 49 is rotatable by the rotational driving force of a motor (not shown), and accordingly, the wafer transfer device 4
6 is also rotatable integrally.

The wafer transfer device 46 includes a plurality of holding members 48 movable in the front-rear direction of the transfer base 47, and the transfer of the wafer W between the processing units is realized by these holding members 48. .

As shown in FIG. 1, in this embodiment, four processing unit groups G ₁ , G ₂ , G ₃ ,
G ₄ are actually arranged around the conveying path 22a, the processing unit group G ₅ is adapted to be positioned as required.

Of these, the first and second processing unit groups G ₁ and G ₂ are located at the front of the system (in FIG. 1).
The third processing unit group G ₃ is disposed adjacent to the cassette station 10, and the fourth processing unit group G ₄ is disposed adjacent to the interface unit 12. The processing unit group G ₅ of the fifth is adapted to be disposed on the rear portion.

[0024] In the first processing unit group _{G 1,} the cup C
A resist coating unit (COT) for applying a resist to the wafer W by mounting the wafer W on a spin chuck (not shown) in the P and a developing unit (DEV) for similarly developing a resist pattern in the cup CP Are stacked in two layers in order from the bottom. Similarly, the second processing unit group G2 has _two spinner-type processing units, ie, a resist coating processing unit (COT) and a developing unit (DE).
V) are stacked in two stages from the bottom.

[0025] In the third processing unit group G _3, as shown in FIG. 3, the oven-type processing units for performing predetermined processing put on the mounting table of the wafer W SP (FIG. 1) is multi-tiered I have. That is, an adhesion unit (AD) for performing a so-called hydrophobizing process for improving the fixability of the resist, an alignment unit (ALIM) for performing alignment, an extension unit (EXT) for carrying in / out the wafer W, and a cooling process. A cooling unit (COL) to be performed, and four hot plate units (HP) for performing a heating process on the wafer W before and after the exposure process and after the development process are stacked in eight stages from the bottom in order. Note that a cooling unit (COL) may be provided instead of the alignment unit (ALIM), and the cooling unit (COL) may have an alignment function.

The fourth processing unit group G ₄ may, oven-type processing units are multi-tiered. That is, a cooling unit (COL), an extension / cooling unit (EXTCOL), an extension unit (EXT), a cooling unit (COL), and four hot plate units (HP), which are wafer loading / unloading units provided with a cooling plate, are located below. From 8
It is piled up on the steps.

[0027] the rear side of the main wafer transfer mechanism 22 when the fifth processing unit group G ₅ to provide is adapted to be movable laterally relative to the main wafer transfer mechanism 22 along the guide rails 25 . Therefore, even in the case where the processing unit group G ₅ of the fifth, the space portion is secured by sliding along the guide rail 25 to this maintenance work from behind the main wafer transfer mechanism 22 easily Can be done.

The interface section 12 has the same length as the processing station 11 in the depth direction (X direction). As shown in FIGS. 1 and 2, a portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface section 12, and a peripheral exposure device 23 is arranged at the rear. The wafer transfer mechanism 24 is provided at the center. The wafer transfer mechanism 24 has a wafer transfer arm 24a, and the wafer transfer arm 24a
By moving in the Z direction, both cassettes CR and BR and the peripheral exposure device 23 can be accessed. Further, the wafer transfer arm 24a is rotatable in θ direction, the fourth processing unit group G ₄ belonging extension unit and (EXT), more wafer delivery of the adjacent exposure device side stand of the process station 11 (Not shown) can also be accessed.

In such a resist coating and developing system, first, in the cassette station 10, the wafer transfer arm 21a of the wafer transfer mechanism 21 is mounted on the wafer cassette CR containing the unprocessed wafer W on the mounting table 20. To access the wafer cassette CR
It removed one wafer W from and transported to the third processing unit group G ₃ of the extension unit (EXT).

The wafer W is loaded from the extension unit (EXT) into the processing station 11 by the wafer transfer device 46 of the main wafer transfer mechanism 22.
Then, after being aligned by the third processing unit group G ₃ of the alignment unit (ALIM), it is conveyed to the adhesion process unit (AD), where the resist hydrophobic treatment for enhancing adhesion of (HMDS treatment) facilities Is done. Since this process involves heating, the wafer W is then transferred to a cooling unit (COL) by the wafer transfer device 46 and cooled.

After the adhesion process is completed, the wafer W cooled to a predetermined temperature by the cooling unit (COL)
Is subsequently transferred to a resist coating unit (COT) by the wafer transfer device 46, where a coating film is formed. After completion of the coating process, the wafer W is placed in one of the hot plate units (H) of the processing unit groups G ₃ and G _4.
Pre-baking is performed in P), and then cooled to a predetermined temperature in one of the cooling units (COL).

The cooled wafer W is supplied to the third processing unit.
Group G₃Transported to the alignment unit (ALIM)
And after alignment there, the fourth processing unit
Group G ₄Via the extension unit (EXT)
It is transported to the interface unit 12.

In the interface section 12, the periphery of the wafer, for example, 1 mm is exposed by the peripheral exposure apparatus 23 in order to remove excess resist, and the wafer W is exposed according to a predetermined pattern by the exposure apparatus 50 provided adjacent to the interface section 12. Is subjected to an exposure process.

The wafer W after exposure is returned again to the interface section 12 by the wafer transfer mechanism 24, it is carried to the extension unit (EXT) belonging to the fourth processing unit group _{G 4.} Then, the wafer W is transferred to one of the hot plate units (HP) by the wafer transfer device 46 and subjected to post-exposure bake processing, and then the cooling unit (COL)
Is cooled to a predetermined temperature.

Thereafter, the wafer W is transferred to the developing unit (DE).
V), where the exposure pattern is developed. After the development processing, the wafer W is transferred to any one of the hot plate units (HP) and subjected to post-baking processing, and then cooled to a predetermined temperature by the cooling unit (COL). After such a series of processing is completed, and returned to the cassette station 10 through the third processing unit group G ₃ of the extension unit (EXT), is inserted into one of the wafer cassettes CR.

Next, the developing unit (DEV) according to the first embodiment will be described. 4 and 5 are a schematic sectional view and a schematic plan view showing the entire configuration of the developing unit (DEV).

An annular cup CP is arranged at the center of the developing unit (DEV), and a spin chuck 52 is arranged inside the cup CP. The spin chuck 52 is rotationally driven by a drive motor 54 in a state where the wafer W is fixedly held by vacuum suction. The drive motor 54 is disposed at an opening of the unit bottom plate 50 so as to be able to move up and down, and is connected to a lift drive means 60 and a lift guide means 62 such as an air cylinder via a cap-like flange member 58 made of, for example, aluminum. . A cylindrical cooling jacket 64 made of, for example, stainless steel (SUS) is attached to a side surface of the drive motor 54.
It is attached to cover the upper half.

When the developing solution is applied, the lower end of the flange member 58 is in close contact with the unit bottom plate 50 near the outer periphery of the opening of the unit bottom plate 50, thereby sealing the inside of the unit.
When the wafer W is transferred between the spin chuck 52 and the main wafer transfer mechanism 22, the lifting drive mechanism 60 lifts the drive motor 54 or the spin chuck 52 so that the lower end of the flange member 58 is moved to the unit bottom plate 5
It floats from zero. Note that a window 70 through which the wafer holding member 48 enters is formed in the housing of the development processing unit (DEV).

The developing solution supply nozzle 86 for supplying the developing solution to the surface of the wafer W has a long shape and is disposed with its longitudinal direction being horizontal, and a developing solution supply section 89 is provided through a developing solution supply pipe 88. It is connected to the. This developer supply nozzle 8
6 is detachably attached to the tip of the nozzle scan arm 92. The scan arm 92 is attached to the upper end of a vertical support member 96 that can move horizontally on a guide rail 94 laid in one direction (Y direction) on the unit bottom plate 50. It moves in the Y direction integrally with the vertical support member 96. The developer supply nozzle 86 can be moved vertically (Z direction) by a Z-axis drive mechanism 112.

As shown in FIG. 6, the developing solution supply nozzle 86 has a plurality of discharge ports 87 on the lower surface thereof, so that the discharged developing solution becomes a band as a whole.
At the time of applying the developing solution, the developing solution supplying nozzle 86 is guided by the Y-axis driving mechanism 111 while the developing solution supplying nozzle 86 is discharged in a strip shape onto the wafer W.
4 to scan the wafer W. In the present embodiment, since the developer supply nozzle 86 scans the wafer W twice or more, the developer supply nozzle 86 reciprocates. The developing solution supply nozzle 86 reciprocates while discharging the developing solution, so that the developing solution is supplied to the wafer W regardless of the scanning direction.
The developer can be discharged perpendicular to the wafer W so that the developer can be discharged toward the wafer W.

The operation of the drive system of the development processing unit (DEV) is controlled by the control unit 110. That is, the drive motor 54 and the Y-axis drive mechanisms 111 and Z
The shaft drive mechanism 112 is driven by a command from the control unit 110. The supply of the developing solution from the developing solution supply unit 89 is also controlled by the control unit 110. In the present embodiment, when the developer is applied, the supply of the developer from the developer supply unit 89 is controlled to discharge the developer from the developer supply nozzle 86, and the operation of the Y-axis driving mechanism 111 is performed. To scan the developer supply nozzle 86 twice or more along the Y-axis direction.

The development processing unit (DEV) has a rinse nozzle 102 for discharging a cleaning liquid. The rinsing nozzle 102 includes a rinsing nozzle scan arm 10 movably provided on a guide rail 94 in the Y direction.
4 is attached to the tip. Thus, after the completion of the developing process with the developing solution, the cleaning solution is moved onto the wafer W and the cleaning solution is discharged onto the wafer W.

The developer supply nozzle 86 is connected to the nozzle standby section 1
15 (FIG. 5), and the standby unit 115 includes a nozzle cleaning mechanism 12 for cleaning the nozzle 86.
0 is provided.

Next, the operation of the developing process in the developing unit (DEV) configured as described above will be described. A wafer W having a predetermined pattern exposed and subjected to post-exposure bake processing and cooling processing is transferred to a position directly above the cup CP by the main wafer transfer mechanism 22, and is vacuum-sucked to the spin chuck 52 raised by the lifting drive mechanism 60. .

Next, as shown in FIG. 7A, the developer supply nozzle 86 is positioned above one end A of the wafer W, and the developer L is supplied from the developer supply nozzle 86 into a belt shape. The developing solution supply nozzle 86 is moved to a position above the other end B of the wafer W by the Y-axis driving mechanism 111 while the first scan is performed, and the first scan is completed. Next, as shown in FIG. 7B, the developer supply nozzle 86
Y axis driving mechanism 11 while discharging developer L
1, the developer supply nozzle 86 is moved from a position above the end B to a position above the end A, and the second scan is completed. The developer supply nozzle 86 is reciprocated a predetermined number of times, and the developer supply nozzle 86 is scanned two or more times a predetermined number of times, thereby forming a developer paddle. As described above, by causing the developer supply nozzle 86 to scan two or more times, the developer paddle formed on the wafer W by the first scan is stirred by the discharge of the developer during the second and subsequent scans. Due to the stirring effect, the developing process can be performed uniformly, and the uniformity of the line width can be improved.

In this case, at the time of the second and subsequent scans,
The control unit 110 may control the discharge amount of the developer from the developer supply nozzle 86 to be reduced or not to be discharged at a certain time during scanning. This makes it possible to reduce the discharge amount of the developer while improving the uniformity of the line width.

Further, in the second and subsequent scans, the wafer W is rotated by a predetermined angle (30 to 60 °) before the start of the scan (for example, the wafer W is rotated by 30 ° in the second scan, and At the time of the second scan, the wafer W is further rotated by 30 °), and the control unit 110 may control the drive motor 54. As a result, the developer can be evenly distributed on the wafer W, and the uniformity of the line width can be further improved.

After applying the developing solution as described above, the developing solution paddle is formed on the wafer W, and the developing solution is stopped for a predetermined time, and the developing process proceeds by natural convection. After a lapse of a predetermined time, the wafer W is rotated by the spin chuck 52 to shake off the developing solution.
Is moved above the wafer W, the cleaning liquid is discharged from the rinse nozzle 102, and the developing liquid remaining on the wafer W is washed away.

Thereafter, the spin chuck 52 is rotated at a high speed, the developing solution and the cleaning solution remaining on the wafer W are blown off, and the wafer W is dried. Thus, a series of development processing ends.

Thereafter, the developing solution supply nozzle 86 to which the developing solution has adhered by the stirring of the developing solution is moved to the standby position 115 and positioned at the nozzle cleaning mechanism (nozzle bath) 120. Then, the cleaning liquid is supplied to the tip of the developer supply nozzle 86 for cleaning.

Next, the result of actual development by applying this embodiment will be described. Here, using the developer supply nozzle 86 having the shape shown in FIG. 6, the developer supply nozzle 86 is scanned a plurality of times by the Y-axis drive mechanism 111 while discharging the developer from the developer supply nozzle 86. Then, a developing solution was applied on the wafer W.

Specifically, the procedure was as follows. First,
The developer supply nozzle 86 is made to stand by at a position 5 mm away from the peripheral edge of the wafer W, and a dummy dispensing of the developer is performed from the developer supply nozzle 86.
Discharge was performed at 0 L / min for 0.5 seconds.

After the dummy dispensing, the developer supply nozzle 86 was scanned on the wafer W by the Y-axis driving mechanism 111. The moving speed at this time is 25 to 150 mm
/ Sec.

After the completion of the first scan, the developer supply nozzle 86 was caused to perform a second scan by the Y-axis drive mechanism 111. Thereafter, in the same manner, the developer supply nozzle 8
6 was scanned 3-4 times.

After these scans are completed, the developer supply nozzle 86 is moved to a position 5 mm away from the peripheral edge of the wafer W, a dummy dispense is performed for 0.5 second, and then the discharge of the developer is stopped. The nozzle was returned to the nozzle cleaning mechanism (nozzle bath) 120.

FIG. 8 shows the experimental results. FIG. 8 shows a relationship between a position on the wafer W at the time of scanning and a pattern dimension (that is, a line width). As is clear from FIG. 8, at the time of the first scan, there is variation in the wafer surface, and there is a large difference in pattern dimensions (line width) between the start and end of the scan. As the size increases, the variation decreases, and the difference between the pattern dimensions (line width) at the start and end of the scan decreases. Thus, the developer supply nozzle 8
It has been confirmed that by scanning the sample No. 6 twice or more, and as the number of scans is increased, the variation in the line width can be reduced, and the uniformity of the line width is improved.

FIG. 9 shows other experimental results. FIG. 9 is a diagram showing the relationship between the number of scans, the in-plane range of the line width, and the critical dimension (CD). As is clear from FIG. 9, as the number of scans increases, the in-plane range (Range / nm) of the line width decreases,
In the second scan, it was confirmed that the range could be suppressed to an in-plane range with few practical problems. In addition, it was confirmed that as the number of scans increased, especially after the third scan, the critical dimension (CD) became extremely small, and it was possible to suppress the critical dimension (CD) with few practical problems.

In this embodiment, FIG.
As shown in (a), the developer supply nozzle 86 and the wafer W
The _first scan is performed with an interval of D ₁ (for example, 1.5 mm), and in the second and subsequent scans, the developer supply nozzle 86 is lowered, as shown in FIG.
Distance between the developing solution supply nozzle 86 and the wafer W may be scanned as a narrow _{D 2} (e.g., 0.5 mm) than _{D 1.} In this manner, the effect of stirring the developer during the second and subsequent scans can be enhanced. In addition,
Instead of lowering the developer supply nozzle 86, the wafer W may be raised.

Further, as shown in FIGS. 11A and 11B, the developing solution supply nozzle 86 is configured to be rotatable by the rotating mechanism 201 so that the developing solution is supplied to the developing device in the first scan and the second scan. The angle between the supply nozzle 86 and the wafer W may be different. For example, in the first scan, the developer supply nozzle 86 is tilted backward in the traveling direction by the rotating mechanism 201 so as to form an angle θ ₁ (for example, 45 °) with the wafer W (FIG. 11A), and then rotated. The mechanism 201 may tilt the developer supply nozzle 86 backward in the traveling direction of the second scan, and perform the second scan at an angle θ ₂ (eg, 135 °) with the wafer W (FIG. 11).
(B)). By doing so, the effect of stirring the developer L during the second and subsequent scans can be enhanced. Note that instead of rotating the nozzle, the wafer W
May be inclined.

Further, as shown in FIG. 12, the moving speed of the developer supply nozzle 86 may be higher in the second scan than in the first scan.
Thereby, the effect of stirring the developer by the developer supply nozzle 86 can be enhanced. When scanning three or more times, it is preferable to further increase the scanning speed thereafter.

Further, as shown in FIG. 13, the discharge amount of the developing solution supply nozzle 86 may be larger in the second scan than in the first scan. This can also enhance the effect of stirring the developer. When scanning is performed three or more times, it is preferable to further increase the ejection amount thereafter.

Further, as shown in FIG. 14, after the first scan of the developing solution supply nozzle 86 is performed, the developing solution supply nozzle 86 is once set at the standby position 202 outside the wafer W, for example, for a few seconds. The scanning may be stopped for a while, and then the second scanning may be performed. In the case where the time for stopping the developer supply nozzle 86 is provided in this manner, the possibility that the liquid drips from the developer supply nozzle 86 occurs at the standby position 202 is high, and the possibility that the liquid drips onto the wafer W can be extremely reduced. In addition, the problem of the wafer W due to the dripping can be prevented.

Further, as shown in FIG. 15, the return position 20 of the first scan of the developer supply nozzle 86 is
3 is positioned above one end of the wafer W,
If the developer supply nozzle 86 is immediately turned back at 3 to start the next scan, the developer can be continuously discharged from the developer supply nozzle 86, thereby preventing the occurrence of liquid dripping. Can be.

Further, as shown in FIG. 16, a cleaning liquid jetting mechanism 204 for jetting a cleaning liquid, for example, pure water, toward the developing liquid supply nozzle 86 in the nozzle cleaning mechanism 120 is provided. Pure water as a cleaning liquid may be ejected while discharging the liquid L. As a result, the dissolved product can be strongly removed, and the cleaning liquid can be prevented from flowing back to the developer supply nozzle 86.

Further, as shown in FIG. 17, a heater 2 as a heating mechanism integrally with the developer supply nozzle 86 is provided.
The developer supply nozzle 86 and the heater 205 are connected to the wafer W so that the developer supply nozzle 86 precedes the heater 205 while discharging the developer from the developer supply nozzle 86 and generating heat from the heater 205. The upper part may be scanned. In this manner, the developer L discharged onto the wafer W from the developer supply nozzle 86 is heated and convected by the heater 205, and the dissolved product is mixed with the developer by the stirring effect at this time. The development can be performed more uniformly.

Further, a back rinse nozzle may be provided on the back side of the wafer W, and the back rinse may be performed in parallel with the scan of the developer supply nozzle at the time of the second and subsequent scans.

Next, a developing unit (DEV) according to the second embodiment will be described. As shown in FIG. 18, when scanning the wafer W while discharging the developing solution from the developing solution supply nozzle 86 in a band shape, the portion of the developing solution protruding from the peripheral edge of the wafer W (the portion indicated by hatching in FIG. 18) is The developer discharged from the supply nozzle 86 is wasted.

For this reason, in this embodiment, as shown in FIG. 19 and FIG.
1, a plurality of developer storage chambers 130a, 130b, 1
Using a developer supply nozzle 86 'divided into 30c, the developer is discharged from each developer storage chamber via a plurality of discharge ports 87'. A developer storage chamber 130a is located in the center of the nozzle 86 'among these developer storage chambers,
Two developer storage chambers 130b are located on both outer sides thereof, and two developer storage chambers 130c are located outside of them. The central developer storage chamber 130a is a first zone, an intermediate developer The storage chamber 130b is a second zone, and the peripheral developer storage chamber 130c is a third zone.

A developer supply pipe is connected to each zone. That is, the first developer supply pipe 88a is provided in the middle developer storage chamber 130a of the first zone, the second developer supply pipe 88b is provided in the middle developer storage chamber 130b of the second zone, and the third developer supply pipe 88b is provided in the third zone. Developer storage chamber 130 at the periphery of the zone
The third developer supply pipe 88c is connected to c. The first to third developer supply pipes 8
8a to 88c are provided with, for example, on-off valves 132a to 132c formed of, for example, air operation valves and flow control devices 133a to 133c formed of, for example, a liquid mass flow controller (LMFC). The flow control valves 132a to 132c and the flow control devices 133a to 133c are controlled by the control unit 110 '. These developer supply pipes 88a to 88c form one supply pipe 88 'on the upstream side of the flow control devices 133a to 133c, and are connected to the developer supply section 89.

The developer supply nozzle 8 thus configured
While discharging the developer in a strip form from 6 ', the nozzle 8
When scanning 6 ′ on the wafer W, a part of the developer supply nozzle 86 protrudes from the peripheral edge of the wafer W immediately after the start of the scan. In the conventional developing solution supply nozzle, the developing solution is also discharged from the protruding portion, and the developing solution is wasted accordingly.

However, in the present embodiment, the control unit 11
By 0 ', the opening / closing valve or the flow control device of the zone corresponding to the protruding portion is controlled so that the developer from the developer storage chamber of the zone corresponding to the protruding portion is reduced or not discharged. More specifically, immediately after scanning, as shown in FIG. 21A, since the second zone and the third zone are protruding from the wafer W, the control unit 110 'closes the on-off valves 132b and 132c. Alternatively, by controlling the flow rate control devices 133b and 133c, the discharge of the developer from the developer storage chamber 130b in the second zone and the developer storage chamber 130c in the third zone is stopped or the discharge amount is reduced. The normal amount of the developing solution is discharged only from the developing solution storage chamber 130a corresponding to the first zone. Then, as shown in FIG. 21B, when the developer supply nozzle 86 ′ is scanned to a position where only the third zone protrudes from the wafer W, the second
The developer discharge amount from the developer storage chamber 130b corresponding to the zone is set to the normal state, and the developer storage chamber 130
The discharge of the developer from c is stopped or the discharge amount is reduced. Further, as shown in FIG. 21C, when the developer supply nozzle 86 'is also scanned to a position where the third zone also reaches the position above the wafer W, the developer is supplied from all the developer storage chambers to the normal state. Discharge in quantity. When the developer supply nozzle 86 'is further scanned, the third zone first protrudes from the wafer W and then the second zone. In this case as well, the third zone developer storage chamber 130c and / or The discharge of the developer from the developer storage chamber 130b in the second zone may be stopped or the discharge amount may be reduced.

As described above, the plurality of developer storage chambers 130a
Using the developer supply nozzle 86 ′ provided with
These are divided into a plurality of zones, and the developer storage chambers 130a to 130a to
Since the discharge amount of the developer from 130c is controlled for each zone, waste of the developer in an unnecessary portion can be reduced, and as a result, the total consumption of the developer can be suppressed.

In the second embodiment, the number of developer storage chambers and the number of zones are not limited. By increasing the number of divisions, more accurate control can be performed. Further, by using the developer supply nozzle 86 'having a plurality of developer storage chambers and scanning the nozzle twice or more as in the first embodiment, the consumption of the developer can be suppressed. , Line uniformity can be improved.

The present invention is not limited to the above two embodiments, and various modifications are possible. For example, the developer supply nozzle is not limited to the one described above.
As shown in FIG. 2, a developer supply nozzle 186 having a slit-like developer discharge port 187 may be used.

In the above embodiment, the developer supply nozzle is scanned on the substrate. However, the substrate is moved without moving the developer supply nozzle, and as a result, the developer supply nozzle is scanned. A state similar to the above may be formed. Furthermore, the developing unit incorporated in the coating / developing processing system for a semiconductor wafer has been described. However, the developing unit may be used alone, or a substrate other than the semiconductor wafer, such as an LCD substrate. The invention can be applied to a developing device.

[0076]

As described above, according to the present invention,
Since the developer supply nozzle scans the substrate two or more times to apply the developer onto the substrate, the developer paddle formed on the substrate by the first scan is used for development in the second and subsequent scans. The effect of stirring by liquid discharge can be obtained, and the development processing can be performed uniformly,
The uniformity of the line width can be improved.

Further, the inside of the developing solution supply nozzle is divided into a plurality of developing solution storage chambers, and the developing solution is discharged from the developing solution supply nozzle onto the substrate while controlling the amount of the developing solution discharged from these developing solution storage chambers. Parts that do not require developer discharge,
For example, it is possible to reduce or stop the supply of the developing solution to a portion located at a position deviating from the substrate, to reduce waste of the developing solution, and to suppress the entire consumption of the developing solution. Become.

[Brief description of the drawings]

FIG. 1 is a plan view showing the overall configuration of a semiconductor wafer coating and developing system incorporating a developing unit according to an embodiment of the present invention.

FIG. 2 is a front view showing the overall configuration of a semiconductor wafer coating / developing system incorporating the developing unit according to the embodiment of the present invention;

FIG. 3 is a rear view showing the overall configuration of a semiconductor wafer coating and developing system incorporating the developing unit according to the embodiment of the present invention;

FIG. 4 is a cross-sectional view illustrating an overall configuration of a developing unit according to the first embodiment of the present invention.

FIG. 5 is a plan view showing a developing unit according to the first embodiment of the present invention.

FIG. 6 is a perspective view showing a developer supply nozzle used in the development processing unit according to the first embodiment of the present invention.

FIG. 7 is a schematic diagram for explaining a developer supply method according to the first embodiment of the present invention.

FIG. 8 is a graph showing a relationship between a position on a wafer and a pattern dimension when a developer supply nozzle is scanned according to the number of scans.

FIG. 9 is a graph showing a relationship between the number of scans of a developer supply nozzle, an in-plane range of a line width, and a critical dimension (CD).

FIG. 10 is a schematic cross-sectional view of the developer supply nozzle and the wafer when the distance between the developer supply nozzle and the wafer is reduced during the second and subsequent scans.

FIG. 11 is a schematic cross-sectional view of the developer supply nozzle and the wafer when the angle between the developer supply nozzle and the substrate is set to a different angle from the previous time during the second and subsequent scans.

FIG. 12 is a graph showing another example of the scan configuration of the developer supply nozzle.

FIG. 13 is a graph showing still another example of a scan configuration of the developer supply nozzle.

FIG. 14 is a schematic plan view of the development processing unit viewed from above when the movement of the developer supply nozzle is stopped outside the wafer before the second and subsequent scans.

FIG. 15 is a schematic plan view of the development processing unit when viewed from above when the developer supply nozzle is scanned so as to be folded at one end of the wafer.

FIG. 16 is a diagram illustrating a state in which the cleaning mechanism performs cleaning while discharging a developer from a developer supply nozzle.

FIG. 17 shows a state in which the developer supply nozzle and the heating mechanism are scanned when the developer is discharged from the developer supply nozzle and the discharged developer is heated by the heating mechanism while the developer supply nozzle and the heating mechanism are scanned. And a schematic cross-sectional view of a wafer.

FIG. 18 is a schematic plan view of the developing unit viewed from above when the developing solution supply nozzle is scanned while discharging the developing solution from the developing solution supply nozzle.

FIG. 19 is a partial sectional perspective view showing a developer supply nozzle according to a second embodiment of the present invention.

FIG. 20 is a sectional view showing a developer supply nozzle and a supply mechanism according to a second embodiment of the present invention.

FIG. 21 is a view for explaining a developer supply method according to a second embodiment of the present invention.

FIG. 22 is a perspective view showing another example of the developer supply nozzle.

[Explanation of symbols]

 52; spin chuck (rotating means) 54; drive motors (rotating means) 86, 86 '; developer supply nozzle 88; developer supply pipe 88a; first developer supply pipe 88b; second developer supply pipe 88c. Third developer supply pipe (supply means) 89; developer supply section (developer supply mechanism) 110, 110 '; control section (control mechanism) 111; Y-axis drive mechanism (moving mechanism) 130a, 130b, 130c Developing solution storage chamber 131; partition walls 132a, 132b, 132c; on-off valves 133a, 133b, 133c; flow control device DEV; development processing unit W; semiconductor wafer (substrate)

Claims (26)

[Claims] 1. A method for causing a relative movement between a developer supply nozzle and a substrate such that the developer supply nozzle scans over a substrate while discharging the developer from the developer supply nozzle in a strip shape. A developing method for applying a developing solution to a substrate after exposure to perform a developing process, wherein the developing solution supply nozzle scans the substrate twice or more to apply the developing solution onto the substrate. A developing method characterized by the following. 2. The method according to claim 1, wherein the relative movement between the developer supply nozzle and the substrate is a reciprocating movement. 3. The developing method according to claim 1, wherein the discharge amount of the developer is reduced or not discharged in the second and subsequent scans. 4. The development processing method according to claim 1, wherein the substrate is rotated by a predetermined angle before and after the second scan. 5. The method according to claim 1, wherein at least one of the developer supply nozzle and the substrate is moved up and down during the second and subsequent scans so that a distance between the developer supply nozzle and the substrate is reduced before the scan. The development processing method according to claim 1. 6. At least one of the developer supply nozzle and the substrate during the second and subsequent scans so that the angle formed between the developer supply nozzle and the substrate before the scan is different from the previous angle. The developing method according to claim 1, wherein the developing device is rotated. 7. The developing method according to claim 1, wherein the relative speed between the developer supply nozzle and the substrate is increased during the second and subsequent scans. 8. The method according to claim 1, wherein the discharge amount of the developing solution is increased in the second and subsequent scans.
The developing method according to claim 4, 5 or 6. 9. The developing method according to claim 1, wherein the developer supply nozzle is temporarily stopped outside the substrate before starting the second and subsequent scans. . 10. The development processing method according to claim 9, wherein the developer supply nozzle is stopped for 2 seconds or more. 11. The method according to claim 1, wherein after applying the developing solution onto the substrate, the developing solution is supplied from the developing solution supply nozzle, and a cleaning solution is sprayed onto the developing solution supply nozzle to perform cleaning. Item 11. The development processing method according to any one of items 10. 12. The method according to claim 1, wherein the developing solution discharged onto the substrate is heated during scanning.
The developing method according to any one of the above. 13. A developing apparatus for applying a developing solution to a substrate after an exposure process and performing a developing process, comprising: a developing solution supply nozzle for discharging the developing solution onto the substrate in a belt shape; A developer supply mechanism for supplying to the supply nozzle; a movement mechanism for causing relative movement between the developer supply nozzle and the substrate so that the developer supply nozzle scans over the substrate; and a developer supply nozzle. And supplying the developing solution from the developing solution supply mechanism to the developing solution supply nozzle and relative movement by the moving mechanism so that the developing solution supply nozzle scans the substrate two or more times while discharging the developer in a strip shape from the substrate. And a control mechanism for controlling the target movement. 14. The developing apparatus according to claim 13, wherein the moving mechanism causes a relative reciprocating movement between the developing solution supply nozzle and the substrate. 15. The developing solution supply mechanism according to claim 13, wherein, at the time of the second and subsequent scans, the developing solution supply mechanism controls the developing solution discharge amount to be smaller than the previous time or not to be discharged. Alternatively, the development processing apparatus according to claim 14. 16. The apparatus according to claim 16, further comprising: a rotation mechanism for rotating the substrate, wherein the control mechanism scans the substrate twice or more while the developer supply nozzle discharges the developer onto the substrate in a belt shape. The developing process according to any one of claims 13 to 15, wherein during the second and subsequent scans, the rotation unit is controlled so that the substrate is rotated by a predetermined angle before the start of the scan. apparatus. 17. The cleaning device according to claim 17, further comprising a cleaning solution mechanism for spraying a cleaning solution onto the developing solution supply nozzle, wherein the cleaning mechanism performs cleaning while discharging the developing solution from the developer solution supply nozzle. The developing device according to any one of claims 13 to 16. 18. A heating mechanism, provided integrally with the developer supply nozzle, for heating the developer discharged onto the substrate, wherein the heating mechanism scans the substrate together with the developer supply nozzle. The developing apparatus according to any one of claims 13 to 17, wherein the developing liquid discharged onto the substrate is heated while heating. 19. A developing method for applying a developing solution to a substrate after an exposure process to perform a developing process, wherein the inside of the developing solution supply nozzle is divided into a plurality of developing solution storage chambers, and A developing solution is discharged from a developing solution supply nozzle onto a substrate, and the developing solution is applied onto the substrate, while controlling a developing solution discharge amount of the developing solution. 20. A relative movement is generated between the developer supply nozzle and the substrate such that the developer supply nozzle scans over the substrate while discharging the developer from the developer supply nozzle in a strip shape. 20. The method of claim 19, wherein
The development processing method described in 1. above. 21. When the developer supply nozzle scans over the substrate, the amount of the developer discharged from the developer storage chamber located at a position off the substrate is reduced or not discharged. 20. The development processing method according to 20. 22. The developing method according to claim 20, wherein the developing solution is applied to the substrate by causing the developing solution supply nozzle to scan the substrate twice or more. 23. A developing apparatus for performing a developing process by applying a developing solution to a substrate after the exposure process, wherein the inside of the developing device is divided into a plurality of developing solution storage chambers for storing the developing solution. A developer supply nozzle that discharges a developer from a chamber; a moving mechanism that causes relative movement between the developer supply nozzle and the substrate; and a developer that is stored in a plurality of developer storage chambers of the developer supply nozzle. A developer supply mechanism for supplying the developer, a predetermined amount of the developer is discharged from each of the plurality of developer storage chambers of the developer supply nozzle, and the developer is supplied from the developer supply mechanism to each of the developer storage chambers. A control mechanism for controlling the supply, wherein the moving mechanism causes relative movement between the developer supply nozzle and the substrate while supplying the developer from the developer supply nozzle onto the substrate. Characteristic development Management apparatus. 24. The apparatus according to claim 23, wherein the moving mechanism causes a relative movement between the developer supply nozzle and the substrate such that the developer supply nozzle scans over the substrate. Development processing equipment. 25. The control mechanism according to claim 16, wherein the developing solution supply nozzle scans over the substrate so as to reduce the amount of the developing solution discharged from the developing solution storage chamber located at a position off the substrate or to prevent the developing solution from being discharged. 25. The development processing apparatus according to claim 24, wherein the supply of the developer from the developer supply mechanism to each of the developer storage chambers is controlled. 26. The control device according to claim 17, wherein the developer supply nozzle scans the substrate two or more times while discharging the developer from the developer supply nozzle in a strip shape. 26. The development processing apparatus according to claim 24, wherein supply of the developer to the storage chamber and relative movement by the movement mechanism are controlled.