JP2014053622A - Development apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a development apparatus capable of suppressing developer consumption.SOLUTION: A development apparatus for developing a wafer W comprises: a spin chuck for holding the wafer W in a rotatable manner; a developer nozzle 11 in which a plurality of discharge ports a0, a1, and a2 (called simply discharge ports (a) hereafter) for discharging developer are formed while being arranged side by side in one row and developer discharged from the discharge ports (a) is deposited to the wafer W while being separated from each other; a horizontal move mechanism 21 for moving the developer nozzle 11 approximately between the center and the edge of the wafer W in a planar view by moving the developer nozzle 11 in one direction toward the center of the wafer W in a planar view while keeping an arrangement direction d1 of the discharge ports (a) in the one direction; and a control section for developing the wafer W by spirally depositing the developer from the discharge ports (a) onto the wafer W, respectively, while controlling the spin chuck and the horizontal move mechanism 21.

Description

  The present invention relates to a developing device that develops a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter simply referred to as “substrate”). The present invention relates to a technique for reducing the consumption of a developing solution by supplying to the developer.

  Conventionally, this type of apparatus includes a spin chuck that rotatably holds a substrate, a slit nozzle that supplies a developer in a strip shape, and a moving mechanism that moves the slit nozzle. In this apparatus, the substrate is rotated and the slit nozzle is moved to supply the belt-like developer to the substrate in a spiral shape. According to this apparatus, the consumption of the developer can be reduced as compared with the case where the substrate is developed by depositing the developer on the substrate (see, for example, Patent Document 1).

Japanese Patent Laid-Open No. 2005-210059

However, the conventional example having such a configuration has the following problems.
That is, when the flow rate of the developer supplied to the slit nozzle varies, the width of the developer supplied from the slit nozzle tends to become unstable. Specifically, the belt-like developer is narrowed or cracked. In such a case, it is difficult to apply the developer to a desired position and range on the substrate, and even if the developer is supplied in a spiral shape, the developer cannot be supplied to the entire surface of the substrate without any gap. Invite. In order to avoid such an inconvenience, it is conceivable to supply an excess amount of the developer, but in this case, the consumption of the developer cannot be sufficiently reduced.

  The present invention has been made in view of such circumstances, and an object thereof is to provide a developing device capable of suppressing the consumption of the developer.

In order to achieve such an object, the present invention has the following configuration.
That is, the present invention provides a developing apparatus for developing a substrate.
Rotation holding means for holding the substrate rotatably;
A plurality of discharge ports for discharging the developer, formed in a line, and a developer supply means for landing the developer discharged from each discharge port on the substrate while being separated from each other;
The developer supply means is moved by moving the developer supply means in this one direction or the direction opposite to this one direction while keeping the direction of arrangement of the discharge ports in one direction toward the center of the substrate in plan view. Moving means that moves across the approximate center and periphery of the substrate in plan view;
Control means for controlling the rotation holding means and the moving means to develop a substrate by causing a developer to be spirally applied from each discharge port onto the substrate;
With
The control means controls the rotation holding means and the moving means so as to bring the locus of adhering positions of adjacent developing solutions close to each other and develop the substrate surface between these loci and the locus after spreading. Cover with liquid,
The control unit moves the last discharge port with respect to the movement direction of the developer supply unit while rotating the substrate once, and moves the last discharge port with respect to the position of the leading discharge port at the time of starting one rotation. Move to a close position with
The rotation speed of the substrate is ω [rad / s],
The moving speed of the developer supply means is v [m / s],
The total number of discharge ports formed in the developer supply means is (m + 1),
The radius of each discharge port is r [m],
The distance between the centers of adjacent discharge ports is P [m],
A position of the leading discharge port at the time of starting one rotation of the substrate, and a position of moving the last discharge port toward the moving direction with respect to the position of the leading discharge port during one rotation of the substrate; When the distance is L [m],
The control means includes
v × 2π / ω = L + 2r + m × P
In this relational expression, the rotation holding means and the moving means are controlled so that the relationship between the rotation speed ω of the substrate and the moving speed v of the developer supply means is maintained.

  [Operations and Effects] According to the present invention, the developer discharged from each discharge port of the developer supply means remains separated from each other until it reaches the substrate. For this reason, the shape of the developer flowing down from the discharge port to the substrate surface is stable regardless of the flow rate variation of the developer. Therefore, the position and range where the developer reaches the substrate is also stable. The moving means moves the developing solution supply means in this one direction while keeping the arrangement direction of the discharge ports arranged in a line in one direction facing the center of the substrate in plan view. Visually moves across the approximate center and periphery of the substrate. The control unit controls the moving unit together with the rotation holding unit, so that the developing solution is supplied to a plurality of spiral regions corresponding to the respective discharge ports. At this time, each ejection port is always on a straight line passing through the center of the substrate in plan view, and the distance from the center of the substrate to each ejection port is increased or decreased in proportion to the distance the developer supply means has moved. Therefore, the positional relationship between a plurality of spiral regions on the substrate can be easily controlled. As a result, the developer can be efficiently supplied to the entire surface of the substrate without any gaps, and thus the consumption of the developer can be suppressed.

  By moving the developer supply means while rotating the substrate, the liquid landing positions are spirally connected. By making the locus of the liquid landing position close to each other, the developer can be reliably supplied to the entire surface of the substrate without a gap. In addition, the locus | trajectory of an adjacent landing position may respond | correspond to the same discharge port other than the case where it respond | corresponds to two different discharge ports, respectively.

  The control means can efficiently supply the developer to the entire surface of the substrate. For this reason, the consumption of a developing solution can be reduced more.

  In the present invention, the control means controls the rotation holding means and the moving means to adjust the relationship between the rotation speed of the substrate and the moving speed of the developing solution supply means, so that the adjacent developing solutions are adjusted. It is preferable to control the interval between the loci of the landing positions. The control means can reliably supply the developer to the entire surface of the substrate by simple control.

  In the present invention, it is preferable that the control means performs control so that the interval falls within a predetermined value or a predetermined range. The control means can be suitably controlled.

  In the present invention, the control means includes nozzle information in which values of the total number (m + 1) of the discharge ports, the center distance P between adjacent discharge ports and the radius r of the discharge ports are set in advance, and the distance L A relationship between the substrate rotation speed ω obtained by giving the value of the distance L in the relational expression and the moving speed v of the developer supply means. It is preferable to control the rotation holding means and the moving means so that the above is maintained.

In the present invention,
The control means includes
Nozzle information in which the total number (m + 1) of the discharge ports, the distance P between the centers of the adjacent discharge ports, and the radius r of the discharge ports are set in advance;
A processing recipe in which an upper limit value Lmax of the distance L is set;
Have
The control means is an expression obtained by modifying the relational expression L = v × 2π / ω−2r−m × P ≦ Lmax
It is preferable to control the rotation holding means and the moving means so as to satisfy the above.

In the present invention,
Furthermore, a lower limit value Lmin of the distance L is preset,
The control means is an equation obtained by modifying the relational expression Lmin ≦ L = v × 2π / ω−2r−m × P ≦ Lmax
It is preferable to control the rotation holding means and the moving means so as to satisfy the above.

  In the present invention, the control means makes the developing speed of the substrate and the moving speed of the developing solution supply means constant when the developing solution is spirally applied to the substrate from each discharge port and developed. It is preferable to control. It can be suitably controlled by the control means.

  In the present invention, it is preferable that the developer discharged from the discharge port flows down in a rod shape. The position and range where the developer reaches the substrate can be suitably controlled regardless of the supply flow rate of the developer.

  In the present invention, the respective discharge ports are provided close to each other, and when the developer is simultaneously discharged from each of the discharge ports, the substrate surface between the liquid landing positions where the developer is deposited on the substrate is deposited. It is preferable to cover with a developing solution that spreads later. Since the developer can be efficiently supplied to the substrate, the consumption of the developer can be suppressed.

  The present specification also discloses an invention relating to the following developing device.

  (1) In a developing device that develops a substrate, a rotation holding means that rotatably holds the substrate and a plurality of discharge ports that discharge the developer are formed in a line, and the developer discharged from each discharge port The developer supply means for landing the liquid on the substrate while being separated from each other, and the developer supply means are moved in this one direction while keeping the direction of alignment of the discharge ports in one direction toward the center of the substrate in plan view. By controlling the moving means for moving the developing solution supply means over substantially the center and the periphery of the substrate in plan view, the rotation holding means and the moving means, the developing solution is supplied onto the substrate from each discharge port. And a control means for developing the substrate by applying the liquid in a spiral manner.

  According to the invention described in (1), the developer discharged from each discharge port of the developer supply means remains separated from each other until it reaches the substrate. For this reason, the shape of the developer flowing down from the discharge port to the substrate surface is stable regardless of the flow rate variation of the developer. Therefore, the position and range where the developer reaches the substrate is also stable. The moving means moves the developing solution supply means in this one direction while keeping the arrangement direction of the discharge ports arranged in a line in one direction facing the center of the substrate in plan view. Visually moves across the approximate center and periphery of the substrate. The control unit controls the moving unit together with the rotation holding unit, so that the developing solution is supplied to a plurality of spiral regions corresponding to the respective discharge ports. At this time, each ejection port is always on a straight line passing through the center of the substrate in plan view, and the distance from the center of the substrate to each ejection port is increased or decreased in proportion to the distance the developer supply means has moved. Therefore, the positional relationship between a plurality of spiral regions on the substrate can be easily controlled. As a result, the developer can be efficiently supplied to the entire surface of the substrate without any gaps, and thus the consumption of the developer can be suppressed.

  (2) In the developing device according to the above-described invention, the developing solution discharged from the discharge port flows down in a rod shape.

  According to the invention described in (2) above, the position and range of the developer landing on the substrate can be suitably controlled regardless of the supply flow rate of the developer.

  (3) In the developing device according to the above-described invention, the discharge ports are provided close to each other, and when the developer is simultaneously discharged from the discharge ports, the liquid landing positions where the developer reaches the substrate A developing device characterized in that the substrate surface between the two is covered with a developer that spreads after the liquid is deposited.

  According to the invention described in (3), since the developer can be efficiently supplied to the substrate, the consumption of the developer can be suppressed.

  (4) In the developing device according to the above-described invention, the rotation holding means and the moving means are controlled so that the loci of adhering positions of adjacent developing solutions are brought close to each other, and the substrate between these loci A developing device characterized in that the surface is covered with a developing solution that spreads after landing.

  According to the invention described in (4) above, the liquid landing positions are spirally connected by moving the developer supply means while rotating the substrate. By making the locus of the liquid landing position close to each other, the developer can be reliably supplied to the entire surface of the substrate without a gap. In addition, the locus | trajectory of an adjacent landing position may respond | correspond to the same discharge port other than the case where it respond | corresponds to two different discharge ports, respectively.

  (5) In the developing device according to the above-described invention, the control unit controls the rotation holding unit and the moving unit to adjust the relationship between the rotation speed of the substrate and the moving speed of the developer supply unit. To control the distance between the locus of the liquid landing positions of the adjacent developers.

  According to the invention as described in said (5), the control means can supply a developing solution reliably to the whole surface of a board | substrate by simple control.

  (6) In the developing device according to the above-described invention, the control unit controls the interval to be within a predetermined value or a predetermined range set in advance.

  According to the invention as described in said (6), a control means can be controlled suitably.

  (7) In the developing device according to the above-described invention, the control unit causes the last discharge port to start rotating once with respect to the moving direction of the developer supply unit while rotating the substrate once. A developing device, wherein the developing device is moved to a position close to the position of the leading discharge port on the moving direction side.

  According to the invention as described in said (7), a control means can supply a developing solution efficiently to the whole surface of a board | substrate. For this reason, the consumption of a developing solution can be reduced more.

  (8) In the developing device according to the above-described invention, the control unit performs control so that at least any two of the plurality of trajectories corresponding to each ejection port overlap.

  According to the invention described in (8) above, the developer can be more reliably supplied to the entire surface of the substrate by overlapping the locus of the landing position of the developer.

  (9) In the developing device according to the above-described invention, the control unit performs control so that the trajectories corresponding to the respective discharge ports overlap each other.

  According to invention of said (9), a developing solution can be reliably supplied to the whole substrate surface.

  (10) In the developing apparatus according to the above-described invention, the distance by which the developing solution supply unit is moved while the control unit makes one rotation of the substrate is the distance between the centers of adjacent discharge ports from the total number of discharge ports. A developing device characterized by a value obtained by dividing by a number obtained by subtracting.

  According to the invention described in (10), the developer can be reliably supplied to the entire surface of the substrate.

  (11) In the developing device according to the above-described invention, the distance that the developer supplying unit is moved while the control unit rotates the substrate once is shorter than the distance between the centers of the adjacent discharge ports. apparatus.

  According to the invention as described in said (11), a developing solution can be reliably supplied to the whole substrate surface.

  (12) In the developing device according to the above-described invention, each discharge port has a circular shape with a diameter of about 1 mm, and the adjacent discharge ports are separated by about 3 mm.

  According to the invention described in (12), the developer discharged from each discharge port has a cylindrical shape, and can be applied to the substrate while being separated. Further, the developer that has landed on the substrate spreads and the developers at different landing positions join together on the substrate, so that the developer can be supplied to the substrate surface without any gap.

  (13) In the developing device according to the above-described invention, when the control unit causes the developer to spirally land on the substrate from each discharge port and develop the substrate, the rotation speed of the substrate and the supply of the developer A developing device characterized in that the moving speed of each means is controlled to be constant.

  According to the invention as described in said (13), it can control suitably by the said control means.

  According to the developing device of the present invention, the developer discharged from each discharge port of the developer supply means remains separated from each other until it reaches the substrate. For this reason, the shape of the developer flowing down from the discharge port to the substrate surface is stable regardless of the flow rate variation of the developer. Therefore, the position and range where the developer reaches the substrate is also stable. The moving means moves the developing solution supply means in this one direction while keeping the arrangement direction of the discharge ports arranged in a line in one direction facing the center of the substrate in plan view. Visually moves across the approximate center and periphery of the substrate. The control unit controls the moving unit together with the rotation holding unit, so that the developing solution is supplied to a plurality of spiral regions corresponding to the respective discharge ports. At this time, each ejection port is always on a straight line passing through the center of the substrate in plan view, and the distance from the center of the substrate to each ejection port is increased or decreased in proportion to the distance the developer supply means has moved. Therefore, the positional relationship between a plurality of spiral regions on the substrate can be easily controlled. As a result, the developer can be efficiently supplied to the entire surface of the substrate without any gaps, and thus the consumption of the developer can be suppressed.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram illustrating a schematic configuration of a developing device according to the embodiment, and FIG. 2 is a plan view of the developing device according to the embodiment.

  The developing device according to the present embodiment includes a spin chuck 1 that sucks the central portion of the lower surface of the substrate W and holds the substrate W in a horizontal posture. The tip of the output shaft 3 a of the motor 3 is connected to the lower center of the spin chuck 1. By rotating the output shaft 3a of the motor 3, the spin chuck 1 and the substrate W are rotated about the vertical axis AX. The vertical axis AX passes through the approximate center of the substrate W. The spin chuck 1 and the motor 3 correspond to the rotation holding means in this invention. The rotation holding means is not limited to the above example. For example, the spin chuck 1 may be changed to a rotating plate provided with a plurality of pins that hold the edge of the substrate W.

  An anti-scattering cup 5 is provided around the spin chuck 1. The anti-scattering cup 5 has a function of guiding and collecting a developing solution or the like scattered from the outer periphery of the substrate W downward.

  The apparatus includes a developer nozzle 11 that supplies a developer. A plurality (three in this embodiment) of discharge ports a are formed in a row on the lower surface of the developer nozzle 11. One end of a developer pipe 13 is connected to the developer nozzle 11 in communication. A flow path is formed in the developer nozzle 11 to connect the developer pipe 13 and each discharge port a (see FIG. 4A). The other end of the developer pipe 13 is connected in communication with a developer supply source 15. The developer pipe 13 is provided with an opening / closing valve 17 for opening and closing the flow path of the developer. The developer nozzle 11 corresponds to the developer supply means in this invention.

  The developer nozzle 11 is supported by the horizontal movement mechanism 21. The horizontal movement mechanism 21 moves the developing solution nozzle 11 in one direction while keeping the arrangement direction d1 of the discharge ports a in one direction toward the approximate center of the substrate W, and is positioned above the approximate center of the substrate W (see FIG. 1, the developer nozzle 11 is moved over the position of the developer nozzle 11 indicated by a solid line in FIG. 1 and the position above the periphery of the substrate W (position of the developer nozzle 11 indicated by a dotted line in FIG. 1). Further, the horizontal movement mechanism 21 moves the developer nozzle 11 to a position deviated from above the substrate W (a position of the developer nozzle 11 indicated by a solid line in FIG. 2). Note that the position of the developer nozzle 11 indicated by a dotted line in FIG. 2 is a position above the approximate center of the substrate W.

  The horizontal movement mechanism 21 includes a rail part 22, a self-propelled base 23, and an arm part 24. The rail portion 22 has a linear shape and is horizontally installed on the side of the anti-scattering cup 5. A self-propelled base 23 is slidably attached to the rail portion 22. The self-propelled base 23 moves back and forth in the horizontal uniaxial direction (hereinafter referred to as “movement direction d2”) while being guided by the rail portion 22. One end of an arm part 24 is connected to the upper part of the self-propelled base 23, and the arm part 24 is supported at a position higher than the upper end of the anti-scattering cup 5. The developer nozzle 11 is attached to the other end of the arm portion 24. At this time, the position of the developer nozzle 11 so that the arrangement direction d1 of the discharge ports a is parallel to the movement direction d2 of the self-propelled base 23 and the arrangement direction d1 is directed to the approximate center of the substrate W in plan view. In a state where the posture is determined, the arm portion 24 is fixedly connected. As a result, the developer nozzle 11 moves integrally with the self-propelled base 23 and moves linearly between a position substantially above the center of the substrate W and a position deviated from above the substrate W. The horizontal moving mechanism 21 corresponds to the moving means in this invention.

  As described above, the movement direction of the developer nozzle 11 is the same as the movement direction d2 of the self-propelled base 23 and the arrangement direction d1 of the discharge ports a. Therefore, in the following, reference numerals “d1” and “d2” are appropriately used. It is abbreviated as “d” and appropriately described as “movement direction d of developer nozzle 11”. When the three discharge ports a are distinguished, they are described as “discharge ports a0, a1, a2” in order from the side closer to the approximate center of the substrate W. The apparatus further includes a rinsing liquid nozzle (not shown) that is configured to be movable above the substrate W.

  In addition, the apparatus includes a control unit 31 that performs overall operations on the above-described components. Specifically, the motor 3 is driven to control the rotation speed (rotation speed) of the substrate W, the horizontal movement mechanism 21 is driven to control the movement speed of the developer nozzle 11, and the on-off valve 17 is opened / closed. To control the supply amount of the developing solution.

  The control unit 31 includes a processing recipe in which processing conditions for processing the substrate W are set in advance, and nozzle information regarding the shape of the developer nozzle 11. The processing conditions include a distance L which will be described later, various processing times such as development, washing or drying, and a developer supply flow rate. The nozzle information includes the size of each discharge port a, the interval la between the discharge ports a (described later), or the relative positional relationship between each discharge port a and the substrate W according to the position of the horizontal movement mechanism 21. Including. The control unit 31 is realized by a central processing unit (CPU) that executes various types of processing, a RAM (Random-Access Memory) that serves as a work area for arithmetic processing, a storage medium such as a fixed disk that stores various types of information, and the like. ing.

  Next, the operation of the developing device according to the embodiment will be described. First, a series of operations for developing the substrate W will be briefly described on the assumption that the substrate W on which the resist film is deposited is already sucked and held by the spin chuck 1.

<Step S1>
The control unit 31 drives the motor 3 to open the on-off valve 17 and to drive the horizontal movement mechanism 21. As a result, the substrate W is rotated, and the developer nozzle 11 is moved from above the peripheral edge of the substrate W to approximately above the center of the substrate W while discharging the developer from each discharge port a. Then, when the developer nozzle 11 moves to a position substantially above the center of the substrate W, the control unit 31 stops the movement of the developer nozzle 11. As a result, the developer discharged from each discharge port a is supplied to the surface of the substrate W to develop the substrate W.

<Steps S2 to S4>
The controller 31 rotates the substrate W and maintains the state in which the developer is discharged from the developer nozzle 11 stopped at a position approximately above the center of the substrate W until a predetermined time elapses. (Step S2). When a predetermined time elapses, the control unit 31 retracts the developer nozzle 11 to a position off the upper side of the substrate W, stops the discharge of the developer from the discharge port a, and starts from a rinse liquid nozzle (not shown). The rinse liquid is supplied to the substrate W, the development of the substrate W is stopped, and the substrate W is cleaned (step S3). When the cleaning process is performed on the substrate W for a predetermined time, the control unit 31 stops supplying the rinse liquid and rotates the substrate W at a higher speed (step S4). Thereby, the substrate W is dried while shaking off the rinse liquid from the substrate W.

  Next, three processing examples (steps S1a, S1b, and S1c) will be described for more detailed processing contents of step S1.

<First Processing Example (Step S1a)>
During one rotation of the substrate W, the control unit 31 moves the last discharge port a2 with respect to the moving direction d of the developer nozzle 11 with respect to the position of the first discharge port a0 at the time of starting one rotation. Move to a position close to the moving direction.

  Please refer to FIG. 3 is a plan view schematically showing the state of the developer applied to the rotating substrate. FIGS. 4A and 4B are views taken along arrows AA and BB in FIG. 3, respectively. FIG. As shown in FIG. 4A, the developer D discharged from each discharge port a flows down in a rod shape, and is deposited on the substrate W while being separated from each other (see FIG. 4A). The liquid deposition position where the developer D directly deposits on the substrate W is substantially vertically below the ejection port a and has an area substantially the same as the size of the ejection port a. In FIG. 3, the landing positions of the developer D discharged from the discharge ports a0, a1, and a2 are shown with reference numerals b0, b1, and b2, respectively. The liquid landing positions b0, b1, and b2 are appropriately abbreviated as “liquid landing position b” when not particularly distinguished.

  The developer nozzle 11 is moved while the substrate W is rotated about the vertical axis AX in a state where the developer D is discharged from each discharge port a (the rotation direction is indicated by a reference numeral “c” in FIG. 3). As a result, each liquid landing position b is continuously displaced. In this specification, the respective regions where the liquid landing positions b0, b1, and b2 are respectively connected are referred to as liquid landing position loci bL0, bL1, and bL2. Note that reference numerals “bL0”, “bL1”, and “bL2” in FIG. 3 indicate regions surrounded by two curved broken lines corresponding to the liquid landing positions b0, b1, and b2, respectively. In the following description, the liquid landing position trajectories bL0, bL1, and bL2 are appropriately abbreviated as “liquid landing position trajectory bL” when not particularly distinguished.

  The developed developer D spreads laterally from the landing position b over time. For this reason, as shown in FIG. 3, the range in which the developer D is supplied to the substrate W is wider than the locus bL of the landing position.

  In the present embodiment, the interval between the discharge ports a (more specifically, the distance between the edges of the discharge port a) la is designed based on the experimental results and the like, and as a result, as shown in FIG. The developing solution that has been separated and deposited simultaneously on the matching landing position b joins on the substrate W. Therefore, as shown in FIG. 3, the developer is reliably supplied also to the surface of the substrate W between the locus bL of the landing positions. In addition, it is preferable that the space | interval la of the adjacent discharge outlets a is 3 (mm), for example. In this case, the diameter of the discharge port a is preferably 1 (mm).

  FIG. 5 is a schematic diagram showing the range of the developer supplied to the surface of the substrate W, and FIG. 5B shows the time after the substrate W has made one revolution from the time shown in FIG. Show. In FIG. 5, the range in which the developer is supplied is illustrated by changing the pattern density for each ejection port a.

  As shown in the figure, the developer is moved in the moving direction d while rotating the substrate W around the vertical axis AX (the direction indicated by reference numeral “c” in FIG. 5). Is supplied to a spiral-shaped region whose diameter gradually decreases toward the approximate center.

  Further, as shown in FIG. 5, while the substrate W makes one rotation, the discharge port a <b> 2 that is the last in the movement direction d is moved in the movement direction d with respect to the first discharge port a <b> 0 at the start of one rotation. Move to a position spaced apart by a distance L (hereinafter simply referred to as a distance L). This distance L is also set to a value that does not cause a gap where the developer is not supplied on the substrate W, similarly to the interval la between the adjacent ejection ports a. In this way, by bringing the distance between the adjacent developer landing positions trajectories bL0 and bL2 close to each other, as shown in FIG. 5B, the supply range of the developer corresponding to the discharge port a2 can be reduced. The developer supply range corresponding to the outlet a0 can be brought into close contact with no gap.

  The distance L (m) described above is determined by the relationship between the rotational speed ω (rad / s) of the substrate W and the moving speed v (m / s) of the developer nozzle 11 and the nozzle information of the known developer nozzle 11. (Here, ω and v are both positive constants). Hereinafter, it demonstrates concretely using numerical formula.

  FIG. 6 is a plan view schematically showing an orthogonal coordinate system, and FIG. 7 is a bottom view of the developer nozzle 11 schematically showing nozzle information and distance L. FIG. 7B shows a state at a time point after the substrate W makes one rotation from the time point shown in FIG. As shown in FIG. 6, the coordinates are in a two-dimensional plane parallel to the substrate W surface, where the X axis is the arrangement direction d of the discharge ports a (the moving direction d of the developer nozzle 11), and the Y axis is the X axis and Assume an orthogonal coordinate system with an axis orthogonal to the vertical axis AX. The origin (0, 0) of the orthogonal coordinate system coincides with the position of the rotation center of the substrate W in plan view.

  The total number of discharge ports a formed in the developer nozzle 11 is (m + 1), and the discharge ports are referred to as discharge ports a0, a1, a2,..., Am in order from the top in the movement direction d (m is an integer of 1 or more). Each discharge port ai is circular with a radius r (m), and the distance between the centers of adjacent discharge ports a is P (m) (i is an arbitrary integer from 0 to m, and P is a positive constant) To do). If the center position of the first discharge port a0 at time t = 0 (s) is (−R, 0), the center position of each discharge port ai at time t = 0 (s) is (−R−i × P). , 0) (R is a positive constant).

A trajectory along which the point Bi (Xi, Yi), which is a point that is perpendicular to the rotating substrate W surface from the center position of each ejection port ai and projected onto the XY coordinate system, moves as time t passes,
Xi = (− R−i × P + v × t) × cos ωt (1)
Yi = (− R−i × P + v × t) × sin ωt (2)
It is represented by

  The locus of this point Bi can be regarded as the center line of the locus bL of the liquid landing position described above. Here, the angular velocity ω and the moving velocity v are constant. For this reason, when the distance between the trajectories of the point Bi is viewed from the radial direction (that is, when the distance between the intersection points where each trajectory of the point Bi intersects with the straight line passing through the origin is the distance), the radial direction of any angle Even if it sees, it does not change. Therefore, it is convenient to obtain the interval between the trajectories of the point Bi at a position passing through the negative portion of the X axis (a line segment connecting the point (−R, 0) and the origin (0, 0)). The X coordinate when the point Bi is on the negative part of the X axis is obtained by giving the time t = 2πN / ω (N is the number of revolutions of the substrate W and is an integer of 0 or more) to the equation (1). It is done.

Therefore, the difference (Xi ₁ −Xi ₂ ) between the X coordinates of the points Bi corresponding to the discharge ports ai ₁ and ai ₂ at the respective circulation numbers N ₁ and N ₂ is
Xi ₁ −Xi ₂ = (− i ₁ + i ₂ ) × P + v × 2π × (N ₁ −N ₂ ) / ω (3)
It can be expressed as

Here, the value obtained by subtracting 2r from the X coordinate difference (Xi ₁ −Xi ₂ ) can be regarded as the interval between the locus of adhering positions of adjacent developing solutions bL. Therefore, the difference (Xi ₁ −Xi ₂ ) of the X coordinates corresponding to the discharge ports ai ₁ and ai ₂ at the number of revolutions N ₁ and N ₂ corresponds to the distance between the locus of adhering positions of adjacent developer solutions bL. To do.

Here, when the operation is performed as in step S1a, assuming that the position of the leading discharge port a0 at an arbitrary number of revolutions N ₁ = n is (x, 0), the number of revolutions N ₂ = (1) added for one week. The position of the last discharge port am in (n + 1) is (x + L + 2r, 0) (see FIGS. 7A and 7B).

That is, the relationship shown in the following equations (4) to (6) is established.
i ₁ = 0 (4)
i ₂ = m (5)
N ₁ −N ₂ = −1 (6)

When these equations (4) to (6) are given to equation (3), the following equation (7) is obtained.
v × 2π / ω = L + 2r + m × P (7)

  In Expression (7), each value of m, P, and r is a value unique to the developer nozzle 11 and is known. Therefore, the distance L (m) is naturally determined by the relationship between the rotational speed ω (rad / s) of the substrate W and the moving speed v (m / s) of the developer nozzle 11.

  As described above, according to the relational expression (7), the number (˜m) of the discharge ports a, the distance P between the centers of the adjacent discharge ports a, and the radius r of the discharge ports a are various values. By generalizing the developer nozzle 11, the relationship among the rotation speed ω of the substrate W, the moving speed v of the developer nozzle 11, and the distance L can be expressed.

  For this reason, the control unit 31 has nozzle information in which the above-mentioned total number (˜m) of the discharge ports a, the center-to-center distance P of the adjacent discharge ports a, and the radius r of the discharge ports a are set in advance. doing. In addition, the control unit 31 has a processing recipe in which a value (predetermined value) of the distance L is set in advance as a processing condition. In the first processing example, the control unit 31 maintains the relationship between the rotation speed ω of the substrate W obtained by giving a predetermined value to the distance L in Expression (7) and the moving speed v of the developer nozzle 11. The horizontal movement mechanism 21 and the motor 3 are controlled as described above. For example, it is preferable to adjust the relationship between the rotational speed ω of the substrate W and the moving speed v of the developer nozzle 11 so that the distance L is 0.003 (m).

  As a result, as shown in FIG. 5, while the substrate W is rotated once, the rearmost discharge port am is moved with respect to the movement direction d with respect to the first discharge port a0 at the time of starting one rotation. It is possible to bring them closer to the direction d side by a distance L (m). In this way, when the developer nozzle 11 is moved to a position approximately above the center of the substrate W, the developer is supplied to the entire surface of the substrate W without any gap.

  Next, a second processing example (step S1b) will be described for step S1.

<Step S1b>
The control unit 31 develops the developer nozzles in the movement direction d by a distance obtained by dividing the center-to-center distance P of each of the adjacent discharge ports a by the number obtained by subtracting 1 from the total number of the discharge ports a while rotating the substrate W once. 11 is moved.

  Please refer to FIG. FIG. 8 is a schematic diagram showing the range of the developer supplied to the surface of the substrate W in the second processing example. As shown in the drawing, since the developer nozzle 11 has three ejection ports a, the developer nozzle 11 is moved in the moving direction d by a distance obtained by dividing the center distance P of each ejection port a into two while the substrate W rotates once. 11 is moved. Note that FIG. 8 shows a case where the interval la between the adjacent ejection ports a is too large, and the developer that has been separated and applied at the same time cannot be merged even if spread on the substrate W. By moving the developer nozzle 11 to a position above the approximate center of the substrate W by such control, the developer is supplied to the entire surface of the substrate W without any gap.

In the second processing example, in the equation (3), the relationships shown in the equations (8) to (10) are established.
i ₁ −i ₂ = −1 (8)
N ₁ −N ₂ = −1 (9)
Xi ₁ −Xi ₂ = (m−1) × P / m (10)

Alternatively, in the second processing example, in the expression (3), the relationship shown in the expression (11) to the expression (13) is established.
i ₁ −i ₂ = 0 (11)
N ₁ −N ₂ = −1 (12)
Xi ₁ −Xi ₂ = −P / m (13)

Even if any of these formulas (8) to (10) or formulas (11) to (13) is given to formula (3), the following formula (14) is obtained.
v × 2π / ω = P / m (14)

  Therefore, in the second processing example, the controller 31 obtains the horizontal movement mechanism so that the relationship between the rotation speed ω of the substrate W and the movement speed v of the developer nozzle 11 obtained from the equation (14) is maintained. 21 and the motor 3 are controlled.

  Finally, a third processing example (step S1c) will be described for step S1.

<Step S1c>
It controls so that the locus | trajectory bL of the landing position according to each discharge port ai mutually overlaps. Then, the developer nozzle 11 is moved to a position above the approximate center of the substrate W, so that the developer is supplied to the entire surface of the substrate W without any gap.

  Please refer to FIG. FIG. 9 is a schematic diagram showing the range of the developer supplied to the surface of the substrate W by the third processing example. As shown in the figure, the trajectories bL of the liquid landing positions of the three outlets a coincide with each other with the number of laps being around one round.

In the third processing example, the relationship shown in the following equations (15) to (17) is established in equation (3).
i ₁ −i ₂ = 1 (15)
N ₁ −N ₂ = 1 (16)
Xi ₁ −Xi ₂ = 0 (17)

When these equations (15) to (17) are given to equation (3), the following equation (18) is obtained.
v × 2π / ω = P (18)

  Therefore, in the third processing example, the control unit 31 obtains the horizontal movement mechanism so that the relationship between the rotation speed ω of the substrate W and the movement speed v of the developer nozzle 11 obtained from Expression (18) is maintained. 21 and the motor 3 are controlled.

Further, it may be further generalized to perform control so that the track bL of the liquid landing position between the adjacent discharge ports a overlaps as follows. That is, control may be performed so that at least any two of the trajectories bL of the plurality of liquid deposition positions corresponding to each discharge port a overlap. In the case of operating in this way, the discharge ports ai ₁ and ai ₂ are not the same and the number of turns N ₁ and N ₂ are different, and the X coordinate Xi of the point Bi ₁ corresponding to the discharge port ai ₁ at the number of turns N _{1 1} and the X coordinate Xi ₂ of the point Bi ₂ corresponding to the discharge port ai ₂ at the number of revolutions N ₂ (N ₁ ≠ N ₂ ).

Therefore, in the equation (3), the relationship shown in the following equations (19) to (21) is established.
i ₁ −i ₂ ≠ 0 (19)
N ₁ −N ₂ ≠ 0 (20)
Xi ₁ −Xi ₂ = 0 (21)

When these equations (19) to (21) are given to equation (3), the following equation (22) is obtained.
v × 2π / ω = (i ₁ −i ₂ ) × P / (N ₁ −N ₂ ) (22)

  Therefore, in the third processing example, the control unit 31 uses the horizontal movement mechanism so that the relationship between the rotation speed ω of the substrate W and the movement speed v of the developer nozzle 11 obtained from the equation (22) is maintained. 21 and the motor 3 are controlled.

  As described above, according to the developing device according to the first embodiment, the developer nozzle 11 has the plurality of discharge ports a, and the developer discharged from each discharge port a is separated from each other until the liquid reaches the substrate W. It remains. For this reason, the developer flows down in a stable shape from the time when the liquid is discharged from the discharge port a to the time when the liquid reaches the substrate W. Therefore, the position and range where the developer reaches the substrate W is also stable, and the developer landing position b can be easily controlled and managed.

  Since each discharge port a is circular, the developer flows down from each discharge port a in a columnar shape. For this reason, the shape of the flowing-down developing solution is not easily deformed as compared with the belt-like developing solution. Specifically, the width of the flowing-down developer does not widen and the flowing-down developer does not break into two or more.

  Further, since the discharge ports a are arranged close to each other at intervals la, the developer that has been separated and discharged onto the substrate W spreads out for each discharge port a, and between the landing positions b. The substrate W surface can be covered with a developer. Therefore, the developer can be supplied to the substrate W without any gap.

  Further, the horizontal movement mechanism 21 moves the developer nozzle 11 in this one direction in a state where the arrangement direction d of the discharge ports a is maintained in a fixed direction toward the center of the substrate W in plan view. For this reason, each ejection port a is always on a straight line passing through the center of the substrate W in plan view. Therefore, the distance from the center of the substrate W to each discharge port a increases and decreases in proportion to the distance that the developer nozzle 11 has moved uniformly. For this reason, the control unit 31 can control the position of the locus bL of the liquid landing position by adjusting the relationship between the rotational speed (rotational speed ω) of the substrate W and the moving speed v of the developer nozzle 11.

  As described above, since the developer landing position b corresponding to each discharge port a and the position bL of each liquid landing position can be accurately controlled, a plurality of liquid landing position trajectories can be controlled. The mutual positional relationship of bL can also be adjusted. Therefore, the developer can be efficiently supplied to the entire surface of the substrate W without requiring that the supply amount of the developer be excessive. Therefore, the consumption of the developer can be reduced.

  Specifically, in the first processing example, the locus bL of the liquid landing position corresponding to each discharge port a does not overlap, and only merges on the substrate W. As a result, the developer can be supplied to the entire surface of the substrate W very efficiently and uniformly.

  Further, the second processing example is effective when the interval la between the ejection ports a is so large that the developing solution separated and supplied to the adjacent liquid landing position b does not merge even on the substrate W. That is, according to the processing example 2, the developer can be deposited between the liquid deposition positions b that are simultaneously deposited, and the developer N can be reliably supplied to the entire surface of the substrate W. be able to.

  Further, the third processing example is effective when the discharge of the developer from each discharge port a becomes unstable. That is, since the developer is discharged from all the discharge ports a to the same position with different number of turns, the developer can be reliably deposited at a desired position. As a result, the developer can be reliably supplied to the entire surface of the substrate W.

  The present invention is not limited to the above-described embodiment, and can be modified as follows.

  (1) In the above-described first processing example (step S1a), preferable values are exemplified as the interval la and the distance L between the ejection ports a, but are not limited thereto. As long as the developer D is within a range in which the gap between the adjacent landing positions b can be reliably covered by spreading, the values of the interval la and the distance L between the discharge ports a may be appropriately changed. Further, the larger these values are, the more efficiently the developer can be supplied and the consumption of the developer can be reduced.

  For this reason, the first processing example may be changed to operate under the following control. That is, the control unit 31 has in advance a processing condition in which the upper limit value Lmax of the distance L is set instead of the value of the distance L as a processing recipe.

Then, the motor 3 and the horizontal movement mechanism 21 are controlled so that the distance L is equal to or less than the upper limit value Lmax (within a predetermined range), that is, the following expression (23) obtained by modifying the above expression (7) is satisfied. The unit 31 may be controlled.
L = v × 2π / ω−2r−m × P ≦ Lmax (23)

  By operating in this way, the number of rounds of the substrate W during the movement of the developer nozzle 11 from the peripheral edge of the substrate W to the approximate center can be further reduced, and the total length of the locus bL of the landing position is shortened. be able to. For this reason, the developer can be more efficiently supplied to the entire surface of the substrate W.

In addition to the upper limit value Lmax of the distance L described above as a processing condition, a lower limit value Lmin of the distance L is set in advance so that the distance L falls within a predetermined range from the upper limit value Lmax to the lower limit value Lmin. That is, the control unit 31 may control the motor 3 and the horizontal movement mechanism 21 so as to satisfy the following expression (24) obtained by modifying the above expression (7).
Lmin ≦ L = v × 2π / ω−2r−m × P ≦ Lmax (24)

  (2) In the above-described second processing example (step S1b), the center-to-center distance P between the adjacent ejection ports a is divided by the number obtained by subtracting 1 from the total number of ejection ports a while the substrate W is rotated once. The developer nozzle 11 is moved in the movement direction d by the distance as described above, but is not limited thereto. For example, the distance by which the developer nozzle 11 is moved in the movement direction d while the substrate W is rotated once may be changed to a distance shorter than the distance P between the centers of the adjacent ejection ports a.

For example, in addition to the conditional expressions (11) and (12) described above, the following expression (25) may be changed to give the expression (3).
Xi ₁ −Xi ₂ = −P × k (25)
k: Coefficient (constant greater than 0 and less than 1)

  Therefore, a coefficient k or a distance (P × k) shorter than the center-to-center distance P between the adjacent ejection ports a is set as a processing condition, and equations (3), (11), (12), (25) are set. The control unit 31 may control the motor 3 and the horizontal movement mechanism 21 so as to satisfy the above.

  (3) In the embodiment described above, the horizontal movement mechanism 21 moves the developer nozzle 11 in the horizontal direction, but is not limited thereto. As long as the developer nozzle 11 can be displaced between the periphery and the center of the substrate W in plan view, the developer nozzle 11 may be moved including components in other directions.

  (4) In each of the embodiments described above, the moving direction d of the developer nozzle 11 has been described as a direction toward the approximate center of the substrate W in plan view, but the developer is supplied while being moved in a direction opposite to this direction. May be.

  (5) In the above-described embodiment, the discharge port a is circular. However, if the discharged developer can flow down in a rod shape, the shape of the discharge port a is appropriately changed to a rectangle (square) or other shapes. it can.

  (6) In the above-described embodiment, particularly in the description of the first processing example, the interval la between the adjacent discharge ports a is a value at which the separately separated developer can be merged on the substrate W. However, the present invention is not limited to this. For example, the interval la between the adjacent discharge ports a may be designed so as to be large enough that the developer that has been separated and applied at the same time cannot be merged even if spread on the substrate W. Even in the case of changing to the developer nozzle 11 as described above, the developer can be supplied to the entire surface of the substrate W without gaps by performing the second processing example and the third processing example.

1 is a block diagram illustrating a schematic configuration of a developing device according to an embodiment. 1 is a plan view of a developing device according to an embodiment. It is a principal part top view which shows typically the mode of the developing solution applied to the rotating board | substrate. (A), (b) is a vertical sectional view of AA arrow and BB arrow shown in FIG. 3, respectively. It is a schematic diagram which shows the range of the developing solution supplied to the surface of the board | substrate by the 1st process example, and the time after a board | substrate carries out 1 rotation from the time shown to (a) is (b). It is a principal part top view which shows a rectangular coordinate system typically. It is a bottom view of a developing solution nozzle which shows nozzle information and distance typically. It is a schematic diagram which shows the range of the developing solution supplied to the surface of the board | substrate by the 2nd process example, and the time after a board | substrate carries out 1 rotation from the time shown to (a) is (b). It is a schematic diagram which shows the range of the developing solution supplied to the surface of the board | substrate by the 3rd processing example, and the time after a board | substrate carries out 1 rotation from the time shown to (a) is (b).

1 ... spin chuck 3 ... motor 11 ... developer nozzle 21 ... horizontal moving mechanism 31 ... control unit a, a0, a1, a2, ai, ai 1, ai 2 ... discharge port b, b0, b1, b2 ... Chakueki position bL, bL0, bL1, bL2 ... locus of liquid landing position d1 ... direction of arrangement of discharge ports d ... direction of movement of developer nozzles m ... value obtained by subtracting 1 from the total number of discharge ports r ... radius of discharge ports la ... adjacent to each other Distance between discharge ports ω ... Angular speed of substrate v ... Moving speed of developer nozzle L ... Distance Lmax ... Upper limit value of distance L Lmin ... Lower limit value of distance L N, N ₁ , N ₂ ... Number of substrate turns W ... Substrate D: Developer

Claims (9)

In a developing device for developing a substrate,
Rotation holding means for holding the substrate rotatably;
A plurality of discharge ports for discharging the developer, formed in a line, and a developer supply means for landing the developer discharged from each discharge port on the substrate while being separated from each other;
The developer supply means is moved by moving the developer supply means in this one direction or the direction opposite to this one direction while keeping the direction of arrangement of the discharge ports in one direction toward the center of the substrate in plan view. Moving means that moves across the approximate center and periphery of the substrate in plan view;
Control means for controlling the rotation holding means and the moving means to develop a substrate by causing a developer to be spirally applied from each discharge port onto the substrate;
With
The control means controls the rotation holding means and the moving means so as to bring the locus of adhering positions of adjacent developing solutions close to each other and develop the substrate surface between these loci and the locus after spreading. Cover with liquid,
The control unit moves the last discharge port with respect to the movement direction of the developer supply unit while rotating the substrate once, and moves the last discharge port with respect to the position of the leading discharge port at the time of starting one rotation. Move to a close position with
The rotation speed of the substrate is ω [rad / s],
The moving speed of the developer supply means is v [m / s],
The total number of discharge ports formed in the developer supply means is (m + 1),
The radius of each discharge port is r [m],
The distance between the centers of adjacent discharge ports is P [m],
A position of the leading discharge port at the time of starting one rotation of the substrate, and a position of moving the last discharge port toward the moving direction with respect to the position of the leading discharge port during one rotation of the substrate; When the distance is L [m],
The control means includes
v × 2π / ω = L + 2r + m × P
The developing device characterized in that the rotation holding means and the moving means are controlled so that the relationship between the rotational speed ω of the substrate and the moving speed v of the developer supply means is maintained. The developing device according to claim 1,
The control means controls the rotation holding means and the moving means to adjust the relationship between the rotation speed of the substrate and the moving speed of the developing solution supply means, thereby adjusting the liquid landing position of the adjacent developing solutions. A developing device that controls an interval between traces. The developing device according to claim 2,
The developing device according to claim 1, wherein the controller controls the interval to be within a predetermined value or a predetermined range. In the developing device according to any one of claims 1 to 3,
The control means includes
Nozzle information in which the total number (m + 1) of the discharge ports, the distance P between the centers of the adjacent discharge ports, and the radius r of the discharge ports are set in advance;
A processing recipe in which the value of the distance L is preset;
Have
The control means is configured to maintain the relation between the rotation speed ω of the substrate obtained by giving the value of the distance L in the relational expression and the movement speed v of the developer supply means, and the movement means. And a developing device. In the developing device according to any one of claims 1 to 3,
The control means includes
Nozzle information in which the total number (m + 1) of the discharge ports, the distance P between the centers of the adjacent discharge ports, and the radius r of the discharge ports are set in advance;
A processing recipe in which an upper limit value Lmax of the distance L is set;
Have
The control means is an expression obtained by modifying the relational expression L = v × 2π / ω−2r−m × P ≦ Lmax
The developing device, wherein the rotation holding unit and the moving unit are controlled so as to satisfy the above condition. The developing device according to claim 5,
Furthermore, a lower limit value Lmin of the distance L is preset,
The control means is an equation obtained by modifying the relational expression Lmin ≦ L = v × 2π / ω−2r−m × P ≦ Lmax
The developing device, wherein the rotation holding unit and the moving unit are controlled so as to satisfy the above condition. In the developing device according to any one of claims 1 to 6,
The control means controls the rotation speed of the substrate and the moving speed of the developer supply means to be constant when the developer is spirally applied to the substrate from each discharge port to develop the substrate. A developing device. In the developing device according to any one of claims 1 to 7,
A developing device, wherein the developer discharged from the discharge port flows down in a rod shape. In the developing device according to any one of claims 1 to 8,
Each discharge port is provided close to each other, and when the developer is simultaneously discharged from each discharge port, the developer spreads on the substrate surface between the landing positions where the developer reaches the substrate. A developing device characterized by covering with.

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