JP2010153474A - Substrate treatment device and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment device and a substrate treatment method for performing treatment with uniform quality over the entire surface of a substrate. <P>SOLUTION: The substrate treatment device includes: a rotation holding mechanism for rotatably holding the substrate; a cleaning liquid nozzle having a discharge port for discharging a treatment liquid to the substrate; a moving mechanism for the cleaning liquid nozzle for moving the cleaning liquid nozzle between nearly the center and the periphery of the substrate W in a plan view; a control section for rotating the substrate by controlling the rotation holding mechanism and the moving mechanism for the cleaning liquid nozzle, and moving a treatment liquid supply section for directly dipping the treatment liquid discharged from the treatment liquid supply section to the entire surface of the substrate W. Then, since the treatment liquid can be directly dipped to the entire surface of the substrate W, uniform treatment can be performed to the entire surface of the substrate W. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, etc. (hereinafter simply referred to as “substrate”), and in particular, a substrate. The present invention relates to a technology for performing uniform quality processing over the entire surface.

  Conventionally, as this type of apparatus, a rotation holding mechanism for rotatably holding a substrate, a nozzle for supplying a processing liquid to the substrate, a moving mechanism for moving the nozzle, and a nozzle on the peripheral side of the substrate by controlling the moving mechanism There is a control unit that makes the moving speed of the nozzle relatively high, and relatively lower the moving speed of the nozzle on the center side of the substrate. According to this apparatus, the processing time per unit area of the substrate can be made equal over the entire substrate (see, for example, Patent Document 1).

JP-A-11-307492

However, the conventional example having such a configuration has the following problems.
That is, the range in which the processing liquid is deposited on the substrate is connected in a spiral shape, and the processing liquid spreads laterally in this spiral gap (a portion where the processing liquid does not directly land on the substrate). Eventually, the processing liquid is directly applied to the substrate, or the processing liquid spreads from the range where the processing liquid has been applied, whereby the processing liquid is supplied to the entire surface of the substrate. However, there is an inconvenience that the processing quality deteriorates in the range where the processing liquid is not directly applied, compared to the range where the processing liquid is directly applied. For example, in the case of the cleaning process, a relatively large amount of particles remain in a range where the liquid is not directly applied, and the processing quality varies over the entire surface of the substrate.

  The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of performing uniform quality processing over the entire surface of a substrate substrate.

In order to achieve such an object, the present invention has the following configuration.
That is, the invention described in claim 1 is a substrate processing apparatus for processing a substrate, wherein a rotation holding mechanism that rotatably holds the substrate, a processing liquid supply unit that has a discharge port for discharging a processing liquid to the substrate, A moving mechanism for moving the processing liquid supply unit between a substantially center and a peripheral edge of the substrate in plan view; and the rotation holding mechanism and the moving mechanism are controlled to rotate the substrate, and the processing liquid supply unit is And a control unit that moves and directly deposits the processing liquid discharged from the processing liquid supply unit on the entire surface of the substrate.

  [Operation / Effect] According to the first aspect of the present invention, the control unit controls the rotation holding mechanism and the moving mechanism to arbitrarily change the relative position between the processing liquid supply unit and the substrate. Is directly applied to the entire surface of the substrate. As a result, the processing liquid is directly applied to the entire surface of the substrate, so that uniform processing can be performed over the entire surface of the substrate.

  In this invention, it is preferable that the said control part overlaps the range where a process liquid arrives, respectively, before and after a board | substrate carries out 1 rotation (Claim 2). The range in which the processing liquid is directly applied to the substrate can be expanded concentrically or spirally. Therefore, the processing liquid can be directly deposited on the entire surface of the substrate efficiently. Here, the term “overlap” includes both overlapping of the ranges where the treatment liquids are deposited, and overlapping of the ranges where the treatment liquids are partially overlapped.

  In the present invention, it is preferable that the control unit deposits the treatment liquid so as to be continuous spirally without a gap. The range in which the processing liquid is directly applied to the substrate can be expanded spirally. Therefore, the processing liquid can be directly deposited on the entire surface of the substrate efficiently.

  In the present invention, it is preferable that the control unit makes the distance for moving the processing liquid supply unit during one rotation of the substrate smaller than the length of the discharge port with respect to the moving direction of the processing liquid supply unit ( Claim 4). The treatment liquid can be directly deposited so that it overlaps the range where the treatment liquid is directly deposited at the time before the substrate is rotated once.

  In the present invention, the control unit adjusts a distance for moving the processing liquid supply unit during one rotation of the substrate within a range smaller than a length of the discharge port with respect to a moving direction of the processing liquid supply unit. (Claim 5). It is possible to adjust the degree of overlap between the ranges in which the processing liquid has directly deposited before and after one rotation of the substrate.

  In the present invention, the control unit may move the processing liquid supply unit at a constant moving speed between a substantial center and a peripheral edge of the substrate in a plan view while rotating the substrate at a constant rotational speed. Preferred (claim 6). The treatment liquid can be preferably deposited directly on the entire surface of the substrate.

  Further, in the present invention, the control unit further adjusts the processing time required for the process of directly depositing the processing liquid on the entire surface of the substrate by controlling the rotational speed of the substrate and the moving speed of the processing liquid supply unit. (Claim 7). While maintaining uniform processing quality over the entire surface of the substrate, it is possible to suitably cope with changes in processing time.

  In the present invention, it is preferable that the moving mechanism moves the processing liquid supply unit in a horizontal uniaxial direction passing through a substantial center of the substrate in plan view. It is possible to move between the approximate center and the peripheral edge of the substrate with the shortest distance.

  In the present invention, the processing liquid supplied from the processing liquid supply unit is a cleaning liquid, and the control unit causes the processing liquid supply unit to directly deposit the cleaning liquid on the entire surface of the substrate to perform a cleaning process on the substrate. It is preferable to do this (claim 9). The cleaning process can be performed with high quality over the entire surface of the substrate.

  Further, in the present invention, a developing solution supply unit that supplies a developing solution is provided, and the control unit supplies the developing solution to the substrate by the developing solution supply unit, and subsequently performs the cleaning process on the substrate. Preferred (claim 10). The developer can be surely washed off on the substrate. Thereby, generation | occurrence | production of a development defect can be suppressed suitably.

  According to an eleventh aspect of the present invention, in the substrate processing method for processing a substrate, the processing liquid is supplied while rotating the substrate and moving the processing liquid supply unit between the substantial center and the periphery of the substrate in plan view. A whole surface liquid deposition step in which the treatment liquid is ejected from the portion and the ejected treatment liquid is directly deposited on the entire surface of the substrate.

  [Operation / Effect] According to the invention described in claim 11, the substrate is rotated and the processing liquid supply unit is moved from the processing liquid supply unit to the processing liquid while moving the processing liquid supply unit between the substantially center and the periphery of the substrate in plan view. As a result, the treatment liquid can be preferably directly applied to the entire surface of the substrate. According to the substrate processing method including such a whole surface deposition process, uniform processing can be performed over the entire surface of the substrate.

  In the present invention, it is preferable that the entire surface liquid deposition step overlaps the range in which the treatment liquid is deposited while the substrate is rotated once in a row (claim 12). The range in which the processing liquid is directly applied to the substrate can be expanded concentrically or spirally. Therefore, the processing liquid can be directly deposited on the entire surface of the substrate efficiently.

  In the present invention, it is preferable that the treatment liquid is deposited in the entire surface liquid deposition step so as to be continuous spirally without a gap. The range in which the processing liquid is directly applied to the substrate can be expanded spirally. Therefore, the processing liquid can be directly deposited on the entire surface of the substrate efficiently.

  In the present invention, it is preferable that in the entire surface liquid deposition step, the substrate is cleaned using a cleaning solution as a processing solution. The cleaning process can be performed with high quality over the entire surface of the substrate.

  Further, in the present invention, it is preferable that a developing step of supplying a developing solution to the substrate is provided, and the entire surface landing step is performed after the developing step. Thereby, generation | occurrence | production of a development defect can be suppressed suitably.

  The present specification also discloses an invention relating to the following substrate processing apparatus.

  (1) In the substrate processing apparatus according to the first aspect, the control unit has a substantially annular range in which the processing liquid is directly deposited while the substrate is rotated once, while the substrate is rotated once before that. A substrate processing apparatus which overlaps with a substantially annular range in which a processing liquid is directly deposited on the circumferential direction without a gap.

  According to the invention described in (1) above, the range in which the processing liquid directly deposits on the substrate can be expanded concentrically or spirally. Therefore, the processing liquid can be directly deposited on the entire surface of the substrate efficiently.

  (2) In the substrate processing apparatus according to any one of claims 1 to 5, the control unit rotates the substrate at a constant number of rotations, and changes the moving speed of the processing liquid supply unit in a plan view. The substrate processing apparatus is made larger on the center side than the peripheral side of the substrate.

  According to the invention described in (2), the relative speed of the processing liquid supply unit with respect to the substrate can be suppressed from varying over the entire surface of the substrate. For this reason, the uniformity of the processing quality over the entire surface of the substrate can be further improved.

  (3) In the substrate processing apparatus according to any one of claims 1 to 7, the moving mechanism swings and moves the processing liquid supply unit around a vertical axis passing through a position deviated from the substrate in plan view. Substrate processing apparatus.

  According to the invention described in (3) above, it is possible to efficiently deposit the processing liquid directly on the entire surface of the substrate.

  (4) The substrate processing apparatus according to any one of claims 1 to 10, wherein the processing liquid supply unit has a plurality of discharge ports.

  According to the invention as described in said (4), process efficiency can be improved because a several discharge port discharges a process liquid to a board | substrate in parallel.

  (5) The substrate processing apparatus according to (4), wherein the discharge ports are arranged in a line in a moving direction of the processing liquid supply unit.

  According to the invention as described in said (5), each discharge port can make a process liquid adhere directly with respect to the whole surface of a board | substrate, respectively.

  (6) In the substrate processing apparatus according to any one of claims 1 to 10, the discharge port has an elongated slit shape, and the processing liquid supply unit has a longitudinal direction of the discharge port in the processing liquid supply unit. A substrate processing apparatus supported by the moving mechanism so as to substantially coincide with the moving direction of the substrate.

  According to the invention described in (6) above, the range in which the processing liquid is directly applied to the substrate during one rotation of the substrate can be increased, which is efficient.

  (7) The substrate processing apparatus according to any one of claims 1 to 10, wherein the discharge port has a substantially circular shape or a substantially regular polygonal shape.

  According to the invention described in (7) above, since the discharge port has a substantially circular shape or a substantially regular polygonal shape, the cross-sectional shape of the processing liquid discharged from the discharge port is maintained substantially constant. It flows down at. Therefore, the processing liquid can be directly and stably deposited on the substrate.

  According to the substrate processing apparatus of the present invention, the control unit controls the rotation holding mechanism and the moving mechanism to arbitrarily change the relative position between the processing liquid supply unit and the substrate, so that the processing liquid is applied to the entire surface of the substrate. The liquid is directly applied to it. As a result, the processing liquid is directly applied to the entire surface of the substrate, so that uniform processing can be performed over the entire surface of the substrate.

  According to the substrate processing method of the present invention, the substrate is rotated, and the processing liquid is discharged from the processing liquid supply unit while the processing liquid supply unit is moved between the approximate center and the periphery of the substrate in plan view. Therefore, the processing liquid can be directly and directly applied to the entire surface of the substrate. According to the substrate processing method including such a whole surface deposition process, uniform processing can be performed over the entire surface of the substrate.

  Embodiments of the present invention will be described below with reference to the drawings. In the present embodiment, an example of an apparatus that performs development processing will be described as the substrate processing apparatus. FIG. 1 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to the embodiment, FIG. 2 is a plan view of the substrate processing apparatus according to the embodiment, and FIG. 3 is a bottom view of a cleaning liquid nozzle.

  The substrate processing apparatus 1 according to this embodiment includes a rotation holding mechanism 11, a developing solution nozzle 13, a cleaning solution nozzle 15, a cleaning solution nozzle moving mechanism 17, and a control unit 19.

  The rotation holding mechanism 11 includes a spin chuck 21 and a motor 23. The spin chuck 21 sucks the central portion of the lower surface of the substrate W and holds the substrate W in a horizontal posture. The tip of the output shaft 23 a of the motor 23 is connected to the lower center of the spin chuck 21. By rotating the output shaft 23a of the motor 23, the spin chuck 21 and the substrate W are rotated about the vertical axis AX. The vertical axis AX passes through the approximate center of the substrate W. Note that the configuration of the rotation holding mechanism 11 is not limited to the above example. For example, the spin chuck 21 may be changed to a rotating plate provided with a plurality of pins that hold the edge of the substrate W.

  A splash prevention cup 25 is provided around the spin chuck 21. The anti-scattering cup 25 has a function of guiding and collecting the developing solution or the like scattered from the outer periphery of the substrate W downward.

  The developer nozzle 13 supplies the developer to the substrate W. On the lower surface of the developer nozzle 13, a plurality of (three in this embodiment) discharge ports a1, a2, and a3 are formed in a line. One end of a developer pipe 31 is connected to the developer nozzle 13 in communication. The other end of the developer pipe 31 is connected in communication with a developer supply source 33. The developer pipe 31 is provided with an open / close valve 35 for opening and closing the flow path. The developer nozzle 13 is supported by a developer nozzle moving mechanism (not shown). The developer nozzle moving mechanism moves the developer nozzle 13 between a position above the substrate W and a position deviated from above the substrate W. The developer nozzle 13 corresponds to the developer supply section in this invention.

  The cleaning liquid nozzle 15 supplies the cleaning liquid to the substrate W. A discharge port b is formed on the lower surface of the cleaning liquid nozzle 15. The discharge port b has a circular shape with a radius r (see FIG. 3). One end of a cleaning liquid pipe 41 is connected to the cleaning liquid nozzle 15 in communication. The other end of the cleaning liquid pipe 41 is connected in communication with a cleaning liquid supply source 43. The cleaning liquid pipe 41 is provided with an opening / closing valve 45 for opening and closing the flow path. The cleaning liquid nozzle 15 corresponds to the processing liquid supply unit in the present invention.

  The cleaning liquid nozzle moving mechanism 17 includes a position of the cleaning liquid nozzle 15 at a substantially central position of the substrate W (a position of the cleaning liquid nozzle 15 indicated by a dotted line in FIG. 2) and a position above the peripheral edge of the substrate W (shown by a solid line in FIG. 2). The position of the cleaning liquid nozzle 15 shown in FIG.

  The cleaning liquid nozzle moving mechanism 17 includes a rail portion 51, a self-propelled base 53, and an arm portion 55. The rail portion 51 is provided on the side of the anti-scattering cup 5. The self-propelled stand 53 is attached to the rail portion 51. The self-propelled platform 53 is guided by the rail portion 51 and moves forward and backward in the horizontal direction. One end of the arm portion 55 is connected to the self-propelled stand 53. The arm portion 55 extends in a substantially horizontal direction and projects above the anti-scattering cup 25. The cleaning nozzle 15 is connected to the other end of the arm portion 55. Then, as the self-propelled platform 53 moves forward and backward, the cleaning liquid nozzle 15 moves back and forth in the horizontal uniaxial direction d passing through the approximate center of the substrate W in plan view. As a result, the cleaning liquid nozzle 15 moves linearly in the radial direction of the substrate W, and can move to a position above the approximate center of the substrate W and a position above the periphery of the substrate W. The cleaning liquid nozzle 15 is further movable to a position off the upper side of the substrate W. The cleaning liquid nozzle moving mechanism 17 corresponds to the moving mechanism in the present invention. In the following description, the cleaning liquid nozzle moving mechanism 17 is abbreviated as “moving mechanism 17” as appropriate.

  The control unit 19 controls the rotation holding mechanism 11 (the motor 23) and the moving mechanism 17 (the self-propelled platform 53) to directly deposit the cleaning liquid discharged from the cleaning liquid nozzle 15 onto the entire surface of the substrate W.

  Reference is made to FIGS. FIG. 4A is a cross-sectional view schematically showing a state in which the cleaning liquid discharged from the cleaning liquid nozzle is directly applied to the substrate W, and FIG. 4B is a plan view thereof. As shown in FIGS. 4A and 4B, the cleaning liquid discharged from the discharge port b of the cleaning liquid nozzle 15 flows down vertically. The cleaning liquid that flows down adheres to the upper surface of the substrate W while keeping its cross-sectional shape substantially the same as that of the discharge port b. Accordingly, the range C where the liquid is directly deposited on the substrate W is substantially circular as shown in FIG. Note that the range C where the liquid is directly applied to the substrate W does not include a range where the processing liquid applied to the upper surface of the substrate W spreads laterally thereafter. For this reason, as long as the relative position of the cleaning nozzle 15 with respect to the substrate W does not change, the range C where the liquid is directly deposited on the substrate W does not widen and remains constant.

  In order to realize such supply of the cleaning liquid to the substrate W, the control unit 19 rotates the substrate W at a predetermined number of revolutions, and only a distance substantially equal to the radius r of the discharge port b during one rotation of the substrate W. The cleaning liquid nozzle 15 is moved so that the cleaning liquid nozzle 15 moves. Here, the rotation speed of the substrate W is n [rpm], the distance that the cleaning liquid nozzle 15 moves during one rotation of the substrate W is L [m], the radius of the discharge port b is r [m], and the cleaning liquid nozzle 15 If the moving speed is v [m / s], the following equation is established.

      L = 60 · v / n = r (1)

  According to this equation (1), the moving speed v [m / s] of the cleaning liquid nozzle 15 is uniquely determined according to the rotation speed n [rpm] of the substrate W and the radius r [m] of the discharge port b. Instead of the rotation speed n [rpm] of the substrate W, the rotation speed N [1 / s] (N = n / 60) of the substrate W or the angular speed ω [rad / s] (ω = 2π · n / 60) may be used.

  In addition to performing the above-described control, the control unit 19 comprehensively controls each component of the other substrate processing apparatus 1. Specifically, the open / close valves 35 and 45 are opened and closed to control the supply amount of the developer and the supply amount of the cleaning liquid.

  In addition to the processing recipe in which processing conditions for processing the substrate W are set in advance, the control unit 19 stores nozzle information related to the shape of the discharge port b of the cleaning liquid nozzle 15 in advance. The processing conditions include the set value of the distance L [m] described above, various processing times such as development, cleaning, or drying, the developer supply amount, the cleaning solution supply amount, and the like. The nozzle information includes the radius r [m] of the discharge port b described above.

  The control unit 19 is realized by a central processing unit (CPU) that executes various types of processing, a RAM (Random-Access Memory) that is a work area for arithmetic processing, a storage medium such as a fixed disk that stores various types of information, and the like. ing.

  Next, the operation of the substrate processing apparatus according to the embodiment will be described. Here, the description will be made assuming that the substrate W on which the resist film is deposited is already sucked and held by the spin chuck 21.

<Step S1> Supply of developer (development process)
The controller 19 drives the motor 23 to open the opening / closing valve 35 and to drive a developer nozzle moving mechanism (not shown). As a result, the substrate W is rotated, and the developer nozzle 13 is moved from above the peripheral edge of the substrate W to above the substantial center of the substrate W while discharging the developer from the discharge ports a1, a2, and a3. Then, when the developer nozzle 13 moves to a position approximately above the center of the substrate W, the control unit 19 stops the movement of the developer nozzle 13. As a result, the developer discharged from each of the discharge ports a1, a2, and a3 is supplied to the surface of the substrate W to develop the substrate W. When the predetermined period elapses, the on-off valve 35 is closed and the developer nozzle 13 is returned to the standby position.

<Step S2> Supply of cleaning liquid (full liquid landing process)
The control unit 19 moves the cleaning liquid nozzle 15 to a position above the approximate center of the substrate W, and adjusts the rotation speed of the substrate W to a predetermined rotation speed n [rpm]. The rotation speed n [rpm] is, for example, 1000 [rpm]. Then, the on-off valve 45 is opened, and the cleaning liquid nozzle 15 is moved from the approximate center of the substrate W to the periphery in a plan view at a moving speed v [m / s]. Note that the moving speed v [m / s] and the rotation speed n [rpm] are values satisfying the expression (1).

  FIG. 5 schematically shows a range C in which the processing liquid is directly applied to the substrate W at a certain point in time. As shown in the drawing, the substrate W rotates in the direction of the rotation direction e. A range C where the processing liquid is deposited on the substrate W is expanded by connecting the substrate W spirally without a gap. In addition, the range where the liquid is directly applied to the substrate W at each time point overlaps the range where the liquid is directly applied to the substrate W at the time before one rotation. In FIG. 5, a range that overlaps with a range in which the treatment liquid has been directly deposited before the treatment liquid is deposited in a period in which the substrate W is rotated 90 degrees until the illustrated time point is particularly denoted by “ Cc "is attached and clearly shown. The width of the overlapping range Cc is r [m].

  When the cleaning liquid nozzle 15 reaches the periphery of the substrate W in plan view, the processing liquid is directly applied to the entire surface of the substrate W without any gap. When the cleaning liquid nozzle 15 reaches the periphery of the substrate W in plan view, the on-off valve 45 is closed and the cleaning liquid nozzle 15 is returned to the standby position.

<Step S3> Rotary drying (drying process)
The control unit 19 rotates the substrate W at a higher speed. Thus, the substrate W is dried while the cleaning liquid is shaken off from the substrate W.

  As described above, according to the substrate processing apparatus of the embodiment, in step S2, the control unit 19 rotates the substrate W at the rotation speed n [rpm], while the cleaning liquid nozzle 15 is substantially at the center of the substrate W in plan view. To the periphery at a moving speed v [m / s]. As a result, the processing liquid can be directly applied to the substrate W so as to be spirally connected without gaps. Therefore, the processing liquid can be directly deposited on the entire surface of the substrate W efficiently. Thereby, the whole surface of the substrate W can be cleaned uniformly.

  Further, the processing liquid can be directly deposited on the entire surface of the substrate W efficiently by spirally expanding the range in which the processing liquid is directly deposited on the substrate W. In addition, since the rotation speed n [rpm] of the substrate W and the moving speed v [m / s] of the cleaning liquid nozzle 15 are constant, the processing liquid can be surely deposited directly on the entire surface of the substrate.

  Further, the moving mechanism 17 moves the cleaning liquid nozzle 15 in the horizontal uniaxial direction d passing through the approximate center of the substrate W in plan view. Accordingly, the cleaning liquid nozzle 15 can be moved by the shortest distance (a distance corresponding to the radius of the substrate W) between the substantial center and the periphery of the substrate W.

  The present invention is not limited to the above-described embodiment, and can be modified as follows.

  (1) In the above-described embodiment, values satisfying the formula (1) are adopted as the rotation speed n [rpm] of the substrate W and the moving speed v [m / s] of the cleaning liquid nozzle 15, but are not limited thereto. Absent. If the distance L that the cleaning nozzle 15 moves while the substrate W makes one revolution is smaller than the diameter 2r of the discharge port b, the values of the rotational speed n [rpm] and the moving speed v [m / s] are set. It can be selected appropriately.

  If it demonstrates with a type | formula, if it is rotation speed n [rpm] and moving speed v [m / s] which satisfy | fill following Formula (2), you may change suitably.

      L = 60 · v / n <2r (2)

  (2) In the above-described embodiment, the control unit 19 gives the moving speed v of the cleaning liquid nozzle 15 by giving the distance L that the cleaning liquid nozzle 15 moves while the substrate W rotates once and the rotation speed n of the substrate W. However, it is not limited to this. The rotation speed n may be determined by giving values of the distance L and the movement speed v, or the distance L may be determined by giving the movement speed v and the rotation speed n. Alternatively, the distance L may be adjusted by changing the rotation speed n and the moving speed v.

  Alternatively, a plurality of combinations of the rotation speed n, the moving speed v, and the distance L may be prepared as candidates, and an appropriate one may be selected from these candidates.

  Please refer to FIG. FIG. 6 is a schematic diagram showing variations of combinations of the rotation speed n, the distance L, and the moving speed v. Three types of rotation speed n (1200 [rpm], 1000 [rpm], 800 [rpm]) and three types of distances L (La [m], Lb [m], Lc [m]: all 2r [m] or less)), and nine combinations are possible. In each combination, the moving speed v is uniquely determined as va, vb,. Further, when the radius of the substrate W is Rr [m], the moving speeds va, vb,..., Vi are also obtained with respect to the processing time t [s] required for the process of directly depositing the processing liquid on the entire surface of the substrate W. Are uniquely determined as Ta, Tb,..., Ti, respectively. Then, the control unit 19 may be configured to select from these nine types of candidates according to the substrate W to be processed, or the control unit 19 may be configured to select with reference to the processing recipe. May be. Alternatively, a plurality of candidates may be presented (output) to the user and an instruction command may be received from the user.

  (3) In the embodiment described above, the cleaning liquid nozzle 15 has the single discharge port b, but may be changed to have a plurality of discharge ports. In this case, it is preferable that the discharge ports are arranged in a row in the moving direction of the cleaning liquid nozzle 15 (horizontal one axial direction d in this embodiment). This is because each discharge port can directly apply the processing liquid to the entire surface of the substrate W.

  (4) In the embodiment described above, the discharge port b of the cleaning liquid nozzle 15 is circular, but is not limited thereto. The shape of the discharge port b may be changed to a rectangle such as a rectangle, a diamond, or a square. Moreover, you may change into other polygons, such as a triangle and a pentagon or more.

  Alternatively, the shape of the discharge port b may be changed to an elongated slit shape. In this case, it is preferable for the cleaning liquid nozzle 15 to have the longitudinal direction of the discharge port substantially coincide with the moving direction of the cleaning liquid nozzle 15. The range in which the processing liquid is directly deposited on the substrate W during one rotation of the substrate W is relatively large, and the processing liquid can be directly deposited on the entire surface of the substrate W with high efficiency.

  Further, when the shape of the discharge port b is not circular as in the above-described modified example, the distance L [m] for moving the cleaning liquid nozzle 15 while the substrate W rotates once is set to the discharge port with respect to the moving direction of the cleaning liquid nozzle 15. What is necessary is just to change so that it may become smaller than length of. As a result, the processing liquid can be directly deposited so as to overlap the range in which the processing liquid has directly deposited before the substrate W makes one rotation.

  (5) The moving mechanism 17 moves the cleaning liquid nozzle 15 in the horizontal uniaxial direction d, but is not limited thereto. For example, the movement of the cleaning liquid nozzle 15 may be linear or curvilinear.

  Please refer to FIG. FIG. 7 is a plan view of a substrate processing apparatus according to a modified embodiment. As shown in FIG. 7, the cleaning liquid nozzle moving mechanism 18 includes a turntable 61 and an arm portion 63. The turntable 61 rotates around the vertical axis BX passing through a position deviated from the substrate W in plan view. One end of the arm part 63 is connected to the turntable 61 and the other end of the arm part 63 is connected to the cleaning liquid nozzle 16. The cleaning liquid nozzle moving mechanism 18 swings and moves the cleaning liquid nozzle 16 on an arc passing through the approximate center of the substrate W in plan view. As a result, the cleaning liquid nozzle 16 moves across the approximate center and periphery of the substrate W in plan view. In addition, the cleaning liquid nozzle 16 shown in FIG. 7 has three discharge ports b1, b2, and b3 as in the modified embodiment described in (3) above.

  (6) In the above-described embodiment, the cleaning liquid nozzle 15 is moved from the approximate center of the substrate W to the peripheral edge in plan view, but the present invention is not limited to this. The moving path of the cleaning nozzle 15 can be changed as appropriate. For example, the cleaning liquid nozzle 15 may be moved from the periphery of the substrate W to substantially the center in plan view, or may be moved between the peripheral edges of the substrate W facing each other. Further, the cleaning liquid nozzle 15 may be reciprocated.

  (7) In the above-described embodiment, the moving speed v [m / s] of the cleaning liquid nozzle 15 is constant, but is not limited thereto. For example, the moving speed v [m / s] of the cleaning liquid nozzle 15 may be changed so as to be larger on the center side of the substrate W than on the peripheral side of the substrate W in plan view. According to this, it is possible to suppress the relative speed of the cleaning liquid nozzle 15 with respect to the substrate W from varying over the entire surface of the substrate W. For this reason, the uniformity of the processing quality over the entire surface of the substrate W can be further improved.

  Alternatively, the cleaning liquid nozzle 15 may be repeatedly moved and stopped every rotation or multiple rotations of the substrate W. According to this, the range in which the processing liquid is directly deposited during one rotation of the substrate W has a substantially annular shape. The substantially annular range can be overlapped without any gap in the circumferential direction with the substantially annular range in which the processing liquid is directly deposited during one rotation of the substrate before that. Therefore, the range in which the processing liquid directly deposits on the substrate W can be expanded concentrically. In addition, when the cleaning nozzle 15 is stopped for two or more rotations, the ranges in which the processing liquid is deposited while the substrate W rotates once before and after each other coincide with each other, and all overlap.

  (8) In the above-described embodiments, the substrate processing apparatus for developing the substrate W has been described as an example, but the present invention is not limited to this. You may apply to the apparatus which performs various processes, such as the apparatus which apply | coats a resist film material. In addition, although the apparatus for directly applying the cleaning liquid to the entire surface of the substrate W has been illustrated, the present invention is not limited thereto. Instead of the cleaning liquid, various processing liquids such as a chemical liquid and a coating material may be used for the substrate W.

  (9) You may change so that each structure of the Example mentioned above and each modified Example (1) thru | or (8) may be combined suitably.

It is a block diagram which shows schematic structure of the substrate processing apparatus which concerns on an Example. It is a top view of the substrate processing apparatus concerning an example. It is a bottom view of a cleaning liquid nozzle. (A) It is sectional drawing which shows typically a mode that the washing | cleaning liquid discharged from the washing | cleaning-liquid nozzle directly adheres to a board | substrate, (b) is the top view. A range in which the processing liquid is directly applied to the substrate at a certain point in time is schematically shown. It is a schematic diagram which shows the combination candidate of rotation speed, distance, and moving speed. It is a top view of the substrate processing apparatus concerning a modification.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Substrate processing apparatus 11 ... Rotation holding mechanism 13 ... Developer nozzle 15 ... Cleaning liquid nozzle 17, 18 ... Cleaning liquid nozzle moving mechanism 19 ... Control part b, b1, b2, b3 ... Discharge port C ... Processing liquid is directly on a substrate Range of liquid landing d ... Horizontal one axis direction r ... Radius of discharge port n ... Number of rotations of substrate L ... Distance that cleaning liquid nozzle moves while substrate rotates once t ... Processing time v ... Movement speed of cleaning liquid nozzle W ... substrate

Claims (15)

In a substrate processing apparatus for processing a substrate,
A rotation holding mechanism for holding the substrate rotatably;
A processing liquid supply unit having a discharge port for discharging the processing liquid to the substrate;
A moving mechanism for moving the processing liquid supply unit between a substantially center and a peripheral edge of the substrate in plan view;
The rotation holding mechanism and the moving mechanism are controlled to rotate the substrate and move the processing liquid supply unit so that the processing liquid discharged from the processing liquid supply unit is directly attached to the entire surface of the substrate. A liquid control unit;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The said control part is a substrate processing apparatus which overlaps the range which a process liquid lands on each other during one rotation of a board | substrate before and after. In the substrate processing apparatus of Claim 1 or Claim 2,
The said control part is a substrate processing apparatus which deposits a process liquid so that it may continue spirally without a gap. In the substrate processing apparatus in any one of Claims 1-3,
The substrate processing apparatus, wherein the control unit makes a distance that the processing liquid supply unit moves while the substrate rotates once is smaller than a length of the discharge port with respect to a moving direction of the processing liquid supply unit. The substrate processing apparatus according to claim 4,
The control unit is a substrate processing apparatus that adjusts a distance that the processing liquid supply unit moves while the substrate rotates once in a range smaller than a length of the discharge port with respect to a moving direction of the processing liquid supply unit. In the substrate processing apparatus in any one of Claims 1-5,
The control unit is a substrate processing apparatus that moves the processing liquid supply unit at a constant moving speed between a substantial center and a peripheral edge of the substrate in a plan view while rotating the substrate at a constant rotational speed. In the substrate processing apparatus in any one of Claims 1-6,
The control unit further controls the number of rotations of the substrate and the moving speed of the processing liquid supply unit, and adjusts the processing time required for the process of directly depositing the processing liquid on the entire surface of the substrate. In the substrate processing apparatus in any one of Claims 1-7,
The movement mechanism is a substrate processing apparatus for moving the processing liquid supply unit in a horizontal uniaxial direction passing through a substantially center of the substrate in plan view. In the substrate processing apparatus in any one of Claims 1-8,
The processing liquid supplied by the processing liquid supply unit is a cleaning liquid,
The control unit is a substrate processing apparatus that performs a cleaning process on a substrate by causing the processing liquid supply unit to directly deposit a cleaning liquid on the entire surface of the substrate. The substrate processing apparatus according to claim 9,
A developer supply unit for supplying the developer,
The control unit is a substrate processing apparatus that supplies a developing solution to the substrate by the developing solution supply unit, and subsequently performs the cleaning process on the substrate. In a substrate processing method for processing a substrate,
While rotating the substrate, the processing liquid supply unit is moved between the substantially center and the peripheral edge of the substrate in plan view, and the processing liquid is discharged from the processing liquid supply unit, and the discharged processing liquid is applied to the entire surface of the substrate. A substrate processing method comprising a whole surface liquid deposition step for direct liquid deposition. The substrate processing method according to claim 11, wherein
The entire surface liquid deposition step is a substrate processing method in which the ranges where the processing liquids are respectively deposited overlap each other while the substrate is rotated once in succession. The substrate processing method according to claim 11 or 12,
The entire surface liquid deposition step is a substrate processing method in which a processing liquid is deposited so as to be continuous spirally without a gap. In the substrate processing method in any one of Claims 11-13,
The entire surface liquid deposition step is a substrate processing method in which a cleaning process is performed on a substrate using a cleaning liquid as a processing liquid. The substrate processing method according to claim 14, wherein
A development step of supplying a developer to the substrate;
The substrate processing method which performs the said whole surface landing process after the said image development process.

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