JPH09213616A - Rotary substrate coating device - Google Patents

Rotary substrate coating device

Info

Publication number
JPH09213616A
JPH09213616A JP3556496A JP3556496A JPH09213616A JP H09213616 A JPH09213616 A JP H09213616A JP 3556496 A JP3556496 A JP 3556496A JP 3556496 A JP3556496 A JP 3556496A JP H09213616 A JPH09213616 A JP H09213616A
Authority
JP
Japan
Prior art keywords
substrate
thin film
nozzle
dissolving
outer peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3556496A
Other languages
Japanese (ja)
Other versions
JP3890393B2 (en
Inventor
Joichi Nishimura
讓一 西村
Masami Otani
正美 大谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP03556496A priority Critical patent/JP3890393B2/en
Publication of JPH09213616A publication Critical patent/JPH09213616A/en
Application granted granted Critical
Publication of JP3890393B2 publication Critical patent/JP3890393B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PROBLEM TO BE SOLVED: To specify the discharging direction of a thin film-melting nozzle onto a substrate surface by horizontally moving the thin film-melting nozzle so that the virtual prolonged line of the movement locus of the arrival point of the substrate surface level of the molten solution discharge from the thin film-melting nozzle may pass the turning center of the substrate or nearby part thereof. SOLUTION: The length of the straight line connecting the axial core P1 of a motor shaft to the turning center of a substrate W held on a rotary base 3 is set up to be equal to the straight line connecting the arrival point Q of the molten solution discharged from the thin film-melting nozzle 13 in the state on the axial core P1 and the discharge position on the surface level of the substrate W. A nozzle moving means is composed so that, when the thin film- melting nozzle 13 is to be moved in the horizontal direction in the state of said nozzle 13 on the discharging position, the virtual prolonged line L of the movement locus T from the arrival point Q of the molten solution discharged from said nozzle 13 on the surface level of the substrate W may pass the turning center P of the substrate W.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、半導体基板や光デ
ィスク用の基板などの円形の基板の表面に回転塗布によ
って形成されたフォトレジスト、感光性ポリイミド、ド
ーパント材、シリカ系被膜形成用塗布液などの薄膜の外
周縁の不要薄膜を除去するために、円形の基板を回転駆
動可能に保持する基板保持手段と、その基板保持手段に
保持された基板の回転中心相当箇所に塗布液を供給する
塗布液供給手段と、表面に回転塗布によって薄膜を形成
した後の基板の外周縁部に溶解液を吐出して基板外周縁
部の不要薄膜を溶解除去する薄膜溶解ノズルと、その薄
膜溶解ノズルを、平面視で基板外周縁部よりも外方に位
置する待機位置と平面視で基板に重複する基板外周縁部
の吐出位置とにわたって水平方向に移動するノズル移動
手段とを備えた回転式基板塗布装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist, a photosensitive polyimide, a dopant material, a coating solution for forming a silica-based coating film, which is formed by spin coating on the surface of a circular substrate such as a semiconductor substrate or a substrate for optical disks. In order to remove the unnecessary thin film on the outer peripheral edge of the thin film, the substrate holding means holds the circular substrate rotatably, and the coating liquid is supplied to a portion corresponding to the rotation center of the substrate held by the substrate holding means. A liquid supply unit, a thin film dissolving nozzle for dissolving and removing an unnecessary thin film on the outer peripheral edge of the substrate by discharging a dissolving liquid to the outer peripheral edge of the substrate after forming a thin film by spin coating on the surface, and the thin film dissolving nozzle, A nozzle provided with a nozzle moving means that moves in a horizontal direction between a standby position located outside the outer peripheral edge of the substrate in plan view and a discharge position of the outer peripheral edge of the substrate overlapping the substrate in plan view. For Formula substrate coating apparatus.

【0002】[0002]

【従来の技術】上述のように、基板の外周縁の不要薄膜
を除去処理するものとして、例えば、実開昭62−89
134号公報に開示されているものが知られている。す
なわち、この従来例によれば、薄膜溶解ノズルの位置を
径方向に変化させることにより、待機位置と吐出位置と
にわたって移動させ、かつ、その移動構成を用いること
により、処理する基板のサイズの違いなどにも対応でき
るように構成している。
2. Description of the Related Art As described above, a method for removing an unnecessary thin film on the outer peripheral edge of a substrate is disclosed, for example, in Japanese Utility Model Laid-Open No. 62-89.
The one disclosed in Japanese Patent No. 134 is known. That is, according to this conventional example, by changing the position of the thin film dissolving nozzle in the radial direction, the thin film dissolving nozzle is moved between the standby position and the discharge position, and by using the moving structure, the difference in the size of the substrate to be processed is obtained. It is configured so that it can also be used.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記従
来例において、処理する基板のサイズの違いなどに対応
させるために薄膜溶解ノズルの吐出位置を径方向に移動
させているが、その吐出位置の移動に伴って基板表面に
対する薄膜溶解ノズルの吐出方向が変化する欠点があっ
た。詳述すれば、薄膜溶解ノズルの吐出方向が鉛直方向
であれば問題は無いが、基板の回転方向や基板の径方向
に対して傾斜しているのが一般的であり、その各方向に
対する傾斜角度が変化してしまうのである。
However, in the above-mentioned conventional example, the ejection position of the thin film melting nozzle is moved in the radial direction in order to cope with the difference in the size of the substrate to be processed. Accordingly, there is a drawback that the discharge direction of the thin film melting nozzle changes with respect to the substrate surface. More specifically, there is no problem if the discharge direction of the thin film melting nozzle is the vertical direction, but it is generally inclined with respect to the rotation direction of the substrate and the radial direction of the substrate. The angle will change.

【0004】この結果、サイズの異なる基板どうしと
か、また、多層コーティングの場合に1層目と2層目と
で溶解液が薄膜に到達する基板外周端縁からの位置を変
えようとする場合において、基板の外周縁に対する不要
薄膜の除去具合が変化して品質が低下する欠点があっ
た。
As a result, when substrates of different sizes are used, or in the case of multi-layer coating, the position where the solution reaches the thin film from the outer peripheral edge of the substrate is to be changed between the first layer and the second layer. However, there has been a drawback that the degree of removal of the unnecessary thin film on the outer peripheral edge of the substrate changes and the quality deteriorates.

【0005】本発明は、このような事情に鑑みてなされ
たものであって、請求項1に係る発明の回転式基板塗布
装置は、薄膜溶解ノズルの吐出位置の移動にかかわら
ず、基板表面に対する薄膜溶解ノズルの吐出方向を一定
に維持できるようにすることを目的とし、また、請求項
2に係る発明の回転式基板塗布装置は、容易な操作で精
度良く基板の外周縁の不要薄膜を除去できるようにする
ことを目的とする。
The present invention has been made in view of the above circumstances, and the rotary substrate coating apparatus according to the first aspect of the present invention is adapted to the substrate surface regardless of the movement of the discharge position of the thin film melting nozzle. An object of the present invention is to maintain the discharge direction of the thin film dissolving nozzle constant, and the rotary substrate coating apparatus according to the second aspect of the invention removes the unnecessary thin film on the outer peripheral edge of the substrate with easy operation and accuracy. The purpose is to be able to.

【0006】[0006]

【課題を解決するための手段】請求項1に係る発明は、
上述のような目的を達成するために、円形の基板を回転
駆動可能に保持する基板保持手段と、その基板保持手段
に保持された基板の回転中心相当箇所に塗布液を供給す
る塗布液供給手段と、表面に回転塗布によって薄膜を形
成した後の基板の外周縁部に溶解液を吐出して基板外周
縁部の不要薄膜を溶解除去する薄膜溶解ノズルと、その
薄膜溶解ノズルを、平面視で基板外周縁部よりも外方に
位置する待機位置と平面視で基板に重複する基板外周縁
部の吐出位置とにわたって水平方向に移動するノズル移
動手段とを備えた回転式基板塗布装置において、ノズル
移動手段を、薄膜溶解ノズルを吐出位置にある状態で水
平方向に移動するときに薄膜溶解ノズルから吐出された
溶解液の基板の表面レベルでの到達点の移動軌跡の仮想
延長線が基板の回転中心またはその近傍を通過するよう
に構成する。
The invention according to claim 1 is
In order to achieve the above-mentioned object, a substrate holding means for holding a circular substrate rotatably and a coating liquid supply means for supplying a coating liquid to a portion corresponding to the rotation center of the substrate held by the substrate holding means. In a plan view, the thin film dissolving nozzle that discharges the dissolving liquid to the outer peripheral edge of the substrate after the thin film is formed by spin coating on the surface to dissolve and remove the unnecessary thin film on the outer peripheral edge of the substrate, and the thin film dissolving nozzle are seen in a plan view. A nozzle for a rotary substrate coating apparatus comprising: a standby position located outside the outer peripheral edge of the substrate; and a nozzle moving unit that horizontally moves over a discharge position of the outer peripheral edge of the substrate overlapping the substrate in plan view. When the moving means is moved in the horizontal direction with the thin film dissolving nozzle in the discharge position, the virtual extension line of the moving locus of the arrival point at the surface level of the substrate of the dissolving liquid discharged from the thin film dissolving nozzle is the rotation of the substrate. Center or configured to pass through the vicinity thereof.

【0007】また、請求項2に係る発明の回転式基板塗
布装置は、上述のような目的を達成するために、薄膜溶
解ノズルから吐出された溶解液の基板の表面レベルにお
ける到達点となるべき位置を設定入力する設定入力手段
と、その設定入力手段での設定入力に基づいてノズル移
動手段の移動量を制御する制御手段とを備えて構成す
る。
Further, in order to achieve the above-mentioned object, the rotary substrate coating apparatus according to the second aspect of the present invention should be the arrival point of the solution discharged from the thin film dissolving nozzle at the surface level of the substrate. It comprises a setting input means for setting and inputting a position and a control means for controlling the movement amount of the nozzle moving means based on the setting input by the setting input means.

【0008】[0008]

【作用】請求項1に係る発明の回転式基板塗布装置の構
成によれば、薄膜溶解ノズルの位置を移動させるとき
に、どの位置にあっても、その位置と基板の回転中心と
を結んだ半径の仮想円の接線方向に対して、基板表面上
での薄膜溶解ノズルから吐出される溶解液の到達点の移
動軌跡が直交する状態になり、薄膜溶解ノズルから基板
表面への溶解液の吐出方向が変化しないようにできる。
According to the structure of the rotary type substrate coating apparatus of the first aspect of the present invention, when the position of the thin film melting nozzle is moved, the position and the rotation center of the substrate are connected at any position. The movement trajectory of the arrival point of the solution discharged from the thin film dissolution nozzle on the substrate surface becomes orthogonal to the tangential direction of the virtual circle of the radius, and the dissolution solution is discharged from the thin film dissolution nozzle to the substrate surface. You can keep the direction unchanged.

【0009】また、請求項2に係る発明の回転式基板塗
布装置の構成によれば、薄膜溶解ノズルから吐出された
溶解液の基板表面への到達点の位置を所望の箇所に自動
的に位置させることができる。
Further, according to the structure of the rotary type substrate coating apparatus of the second aspect of the invention, the position of the arrival point of the dissolving liquid discharged from the thin film dissolving nozzle to the substrate surface is automatically set to a desired position. Can be made.

【0010】[0010]

【発明の実施の形態】次に、本発明の実施例を図面を用
いて詳細に説明する。図1は、本発明に係る回転式基板
塗布装置の実施例を示す平面図、図2は図1のA−A線
から見た断面図であり、電動モータ1の駆動によって鉛
直方向の軸芯P周りで回転する回転軸2の上端に、基板
Wを真空吸着保持する回転台3が一体回転可能に取り付
けられ、基板Wを鉛直方向の軸芯(基板の回転中心)P
周りで回転駆動可能に保持する基板保持手段4が構成さ
れている。
Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a plan view showing an embodiment of a rotary substrate coating apparatus according to the present invention, and FIG. 2 is a sectional view taken along the line AA of FIG. A rotary base 3 for vacuum-holding a substrate W is attached to the upper end of a rotary shaft 2 that rotates around P so as to be integrally rotatable, and the substrate W has a vertical axis (rotation center of the substrate) P.
Substrate holding means 4 for holding the substrate so that it can be driven to rotate is configured.

【0011】基板保持手段4の上方に、フォトレジスト
液などの塗布液を基板W上に供給する塗布液供給手段と
しての塗布液供給ノズル(図示省略)が設けられ、そし
て、基板保持手段4の周囲には、回転塗布時に飛散した
塗布液を受け止める飛散防止カップ5が配設され、塗布
液供給ノズルから基板Wの表面の回転中心箇所に塗布液
を滴下供給し、基板Wを回転させることにより遠心力に
よって基板表面全面に拡げ、基板表面に薄膜を形成する
ように構成されている。
Above the substrate holding means 4, a coating liquid supply nozzle (not shown) is provided as a coating liquid supply means for supplying a coating liquid such as a photoresist liquid onto the substrate W. A scattering prevention cup 5 that receives the coating liquid that has been scattered during spin coating is provided around the periphery, and the coating liquid is dripped and supplied from the coating liquid supply nozzle to the center of rotation of the surface of the substrate W to rotate the substrate W. It is configured to spread over the entire surface of the substrate by a centrifugal force to form a thin film on the surface of the substrate.

【0012】飛散防止カップ5の外側方のベース部材6
に、図3の要部の一部切欠正面図、図4の要部の背面
図、および、図5の要部の斜視図に示すように、ノズル
移動手段を構成するパルスモータ7が設けられるととも
に、そのパルスモータ7のモータ軸7aにスプライン嵌
合構成により鉛直方向にのみ摺動可能に支持ブロック8
が取り付けられ、その支持ブロック8に取り付けられた
支柱部材9の上端に、水平方向のアーム10とアングル
形状の支持ブラケット11とノズル保持部材12とを介
して薄膜溶解ノズル13が取り付けられている。
A base member 6 on the outer side of the scattering prevention cup 5
Further, as shown in the partially cutaway front view of the main part of FIG. 3, the rear view of the main part of FIG. 4, and the perspective view of the main part of FIG. At the same time, the support block 8 is slidable only in the vertical direction on the motor shaft 7a of the pulse motor 7 by the spline fitting configuration.
Is attached, and the thin film melting nozzle 13 is attached to the upper end of the column member 9 attached to the support block 8 via the horizontal arm 10, the angle-shaped support bracket 11, and the nozzle holding member 12.

【0013】前記支持ブロック8に相対回転のみ可能に
取り付けられたプレート部材14に、ベース部材6に鉛
直方向にのみ摺動可能に設けられたガイドロッド15と
エアシリンダ16とが連結されている。
A guide rod 15 and an air cylinder 16, which are slidably provided only in the vertical direction on the base member 6, are connected to a plate member 14 mounted on the support block 8 so as to be relatively rotatable.

【0014】これらの構成により、パルスモータ7を駆
動してモータ軸7aの軸芯P1周りで回転させ、薄膜溶
解ノズル13を、平面視で基板外周縁部よりも外方に位
置する待機位置と平面視で基板Wに重複する基板外周縁
部の吐出位置とにわたって移動させ、かつ、飛散防止カ
ップ5上を移動するときにはエアシリンダ16を伸長し
て高い位置に位置させ、一方、吐出位置では、エアシリ
ンダ16を短縮して下降させ、薄膜溶解ノズル13の先
端位置を基板表面上所定レベルに近づいた位置に位置さ
せることができるようになっている。
With these configurations, the pulse motor 7 is driven to rotate about the axis P1 of the motor shaft 7a, and the thin film melting nozzle 13 is located at a standby position outside the outer peripheral edge of the substrate in plan view. The air cylinder 16 is moved to the discharge position of the outer peripheral edge of the substrate overlapping the substrate W in a plan view, and when moving on the splash prevention cup 5, the air cylinder 16 is extended and positioned at a high position, while at the discharge position, The air cylinder 16 is shortened and lowered so that the tip position of the thin film melting nozzle 13 can be positioned at a position close to a predetermined level on the substrate surface.

【0015】図1に示すように、モータ軸7aの軸芯P
1と回転台3に保持された基板Wの回転中心Pとを結ん
だ直線の長さと、モータ軸7aの軸芯P1と吐出位置に
ある状態で薄膜溶解ノズル13から吐出された溶解液の
基板Wの表面レベルでの到達点Qとを結んだ直線の長さ
とが等しくなるように設定され、薄膜溶解ノズル13を
吐出位置にある状態で水平方向に移動するときに、薄膜
溶解ノズル13から吐出された溶解液の基板Wの表面レ
ベルでの到達点Qの移動軌跡T(一点鎖線で示す)の仮
想延長線L(二点鎖線で示す)が基板Pの回転中心を通
過するようにノズル移動手段が構成されている。
As shown in FIG. 1, the axis P of the motor shaft 7a
1 and the length of a straight line connecting the rotation center P of the substrate W held on the turntable 3 and the axis P1 of the motor shaft 7a and the substrate of the dissolution liquid discharged from the thin film dissolution nozzle 13 in the discharge position. The length of the straight line connecting the arrival point Q at the surface level of W is set to be equal, and when the thin film melting nozzle 13 is moved horizontally in the discharging position, the thin film melting nozzle 13 ejects The nozzle is moved so that a virtual extension line L (shown by a chain double-dashed line) of a movement locus T (shown by a chain double-dashed line) of the reaching point Q of the dissolved solution on the surface level of the substrate W passes through the rotation center of the substrate P. Means are configured.

【0016】アーム10は、支柱部材9側の第1のアー
ム10aと先端側の第2のアーム10bとで構成され、
第2のアーム10bが第1のアーム10aに摺動可能に
外嵌されるとともに、第2のアーム10bに形成された
アーム長手方向に向かう長穴(図示せず)を介して一対
のボルト17,17により固定され、アーム10の長さ
を調整できるようになっている。
The arm 10 is composed of a first arm 10a on the support member 9 side and a second arm 10b on the tip side.
The second arm 10b is slidably fitted onto the first arm 10a, and a pair of bolts 17 is formed through an elongated hole (not shown) formed in the second arm 10b and extending in the arm longitudinal direction. , 17, and the length of the arm 10 can be adjusted.

【0017】図5に示すように、支持ブラケット11
は、第2のアーム10bにアーム長手方向の軸芯と角度
を調整することができるように、アーム長手方向の軸芯
周りで回転可能に取り付けられるとともに、支持ブラケ
ット11に形成された軸芯Rを中心とする円弧形状の長
穴18を介してボルト19により固定され、基板Wの回
転方向に対する薄膜溶解ノズル13の基板表面への吐出
角度を調整できるようになっている。例えば、一般的な
基板Wの回転方向である反時計周りに基板Wを回転させ
る場合には、基板Wの回転方向に対する薄膜溶解ノズル
13の基板表面への吐出角度は、図1に示すように、鉛
直方向から15°程度に設定されるが、この角度を調整で
きるのである。
As shown in FIG. 5, the support bracket 11
Is rotatably attached to the second arm 10b about the axis in the arm longitudinal direction so that the angle can be adjusted with the axis in the arm longitudinal direction, and the axis R formed on the support bracket 11 It is fixed by a bolt 19 through an elongated hole 18 having an arc shape centered at, and the discharge angle of the thin film melting nozzle 13 to the substrate surface with respect to the rotation direction of the substrate W can be adjusted. For example, when the substrate W is rotated counterclockwise, which is the general rotation direction of the substrate W, the discharge angle of the thin film melting nozzle 13 to the substrate surface with respect to the rotation direction of the substrate W is as shown in FIG. , It is set to about 15 ° from the vertical direction, but this angle can be adjusted.

【0018】ノズル保持部材12は、支持ブラケット1
1にアーム長手方向に直交する軸芯周りで回転可能に取
り付けられるとともに、支持ブラケット11に形成され
た軸芯Sを中心とする円弧形状の長穴20を介してボル
ト21により固定され、基板Wの径方向に対する薄膜溶
解ノズル13の基板表面への吐出角度を調整できるよう
になっている。通常、基板Wの径方向に対する薄膜溶解
ノズル13の基板表面への吐出角度は、図6(図1のB
−B線矢視図)に示すように、鉛直方向から15°程度に
設定されるが、この角度を調整できるのである。
The nozzle holding member 12 is a support bracket 1
1 is rotatably mounted around an axis perpendicular to the arm longitudinal direction, and is fixed by a bolt 21 through an arcuate slot 20 centered on the axis S formed in the support bracket 11, and the substrate W It is possible to adjust the discharge angle of the thin film melting nozzle 13 to the substrate surface with respect to the radial direction. Normally, the discharge angle of the thin film melting nozzle 13 to the substrate surface with respect to the radial direction of the substrate W is as shown in FIG. 6 (B in FIG. 1).
As shown in the (-B line arrow view), it is set to about 15 ° from the vertical direction, but this angle can be adjusted.

【0019】上述構成により、基板Wの回転方向および
径方向それぞれに対する薄膜溶解ノズル13の基板表面
への吐出角度を調整するに伴って、アーム10の長さを
調整し、吐出位置にある状態で薄膜溶解ノズル13から
吐出された溶解液の基板Wの表面レベルでの到達点Qと
モータ軸7aの軸芯P1とを結んだ直線の長さを一定に
維持できるようになっている。
With the above structure, the length of the arm 10 is adjusted in accordance with the adjustment of the discharge angle of the thin film melting nozzle 13 to the substrate surface with respect to the rotation direction and the radial direction of the substrate W, and the arm 10 is in the discharge position. The length of a straight line connecting the arrival point Q of the solution discharged from the thin film dissolution nozzle 13 at the surface level of the substrate W and the axis P1 of the motor shaft 7a can be maintained constant.

【0020】前記モータ軸7aの上部に、上下方向にセ
ンサを並設してモータ軸7aの回転角度を検出する原点
センサ、リミットセンサとしての角度検出手段22が設
けられている。
Above the motor shaft 7a, an origin sensor for detecting the rotation angle of the motor shaft 7a by arranging sensors in the vertical direction in parallel, and an angle detecting means 22 as a limit sensor are provided.

【0021】図7のブロック図に示すように、コントロ
ーラ23に設定器24が接続されるとともに、パルスモ
ータ7が接続され、そして、コントローラ23に、位置
設定手段26およびメモリ27が備えられている。
As shown in the block diagram of FIG. 7, the controller 23 is connected to the setting device 24, the pulse motor 7 is connected thereto, and the controller 23 is provided with the position setting means 26 and the memory 27. .

【0022】設定器24では、6インチウエハ、8イン
チウエハ、多層コーティングなど不要薄膜を溶解除去す
る処理形態を入力設定するようになっており、これによ
り前記薄膜溶解ノズル13から吐出された溶解液の基板
Wの表面レベルにおける到達点となるべき位置が設定さ
れる。この設定器24が特許請求の範囲における設定入
力手段に相当する。位置設定手段6では、設定器24で
入力設定された処理形態に基づき、あらかじめ求められ
ている停止すべき到達点までのパルスモータ7の設定パ
ルス数をメモリ27から読み出し、その設定パルス数で
パルスモータ7を駆動するようになっている。
The setting device 24 is adapted to input and set a processing mode for dissolving and removing unnecessary thin films such as 6-inch wafers, 8-inch wafers, and multi-layer coatings, whereby the dissolving liquid discharged from the thin film dissolving nozzle 13 is set. The position to be the arrival point at the surface level of the substrate W is set. The setting device 24 corresponds to the setting input means in the claims. In the position setting means 6, the preset pulse number of the pulse motor 7 up to the reaching point to be stopped, which is obtained in advance, is read from the memory 27 based on the processing mode input and set by the setter 24, and the pulse is set at the preset pulse number. The motor 7 is driven.

【0023】そして、設定パルス数のパルスモータ7の
動作が終了することにより、薄膜溶解ノズル13の移動
を自動的に停止するようになっている。このことによ
り、薄膜溶解ノズル13から吐出された溶解液の基板W
への到達点の位置が設定位置に移動されることになる。
When the operation of the pulse motor 7 for the set number of pulses is completed, the movement of the thin film melting nozzle 13 is automatically stopped. As a result, the substrate W of the dissolution liquid discharged from the thin film dissolution nozzle 13
The position of the reaching point will be moved to the set position.

【0024】以上の構成により、6インチウエハと8イ
ンチウエハといったような基板Wのサイズの違いとか、
多層コーティングの場合に、例えば、外周縁の盛り上が
り部分を順次除去していくために少しずつ外周縁から基
板Wの回転中心P側に位置を変えていくといったとき
に、薄膜溶解ノズル13から吐出された溶解液の基板W
への到達点の位置を自動的に設定位置に操作簡単にかつ
精度良く移動できるようになっている。
With the above configuration, there is a difference in the size of the substrate W such as a 6 inch wafer and an 8 inch wafer,
In the case of multi-layer coating, for example, when the position is gradually changed from the outer peripheral edge to the rotation center P side of the substrate W in order to sequentially remove the raised portion of the outer peripheral edge, the thin film melting nozzle 13 ejects the liquid. Dissolved liquid substrate W
The position of the reaching point can be automatically moved to the set position easily and accurately.

【0025】また、上記実施例では、モータ軸7aの軸
芯P1と回転台3に保持された基板Wの回転中心Pとを
結んだ直線の長さと、モータ軸7aの軸芯P1と吐出位
置にある状態で薄膜溶解ノズル13から吐出された溶解
液の基板Wの表面レベルでの到達点Qとを結んだ直線の
長さとが等しくなるように設定されるとともに、薄膜溶
解ノズル13を吐出位置にある状態で水平方向に移動す
るときに、薄膜溶解ノズル13から吐出された溶解液の
基板Wの表面レベルでの到達点Qの移動軌跡の仮想延長
線Lが基板Wの回転中心Pを通過するように移動手段を
構成したので、基板サイズが異なる場合や、多層コーテ
ィングの場合など溶解液の吐出位置を違えたい場合で
も、薄膜溶解ノズルの基板の回転方向や基板の径方向に
対する傾斜角度を一定に保ったままで溶解液の吐出を行
うことができる。そのため、溶解液の基板上に対する吐
出位置によって、基板外周縁に対する不要薄膜の除去具
合の品質を保つことができる。なお、溶解液の吐出位置
を違えたい場合に薄膜溶解ノズルの基板の回転方向や基
板の径方向に対する傾斜角度をある程度一定に一定に保
ちうる範囲で、薄膜溶解ノズル13を吐出位置にある状
態で水平方向に移動するときに、薄膜溶解ノズル13か
ら吐出された溶解液の基板Wの表面レベルでの到達点Q
の移動軌跡の仮想延長線Lが基板Wの回転中心P近傍を
を通過するように移動手段を構成するようにしてもよ
い。
Further, in the above embodiment, the length of the straight line connecting the axis P1 of the motor shaft 7a and the rotation center P of the substrate W held on the turntable 3, the axis P1 of the motor shaft 7a and the discharge position. Is set so that the length of the straight line connecting the reaching point Q at the surface level of the substrate W of the dissolving liquid ejected from the thin film dissolving nozzle 13 is equal to the ejecting position of the thin film dissolving nozzle 13. When moving horizontally in the state of, the virtual extension line L of the moving locus of the arrival point Q of the solution discharged from the thin film dissolution nozzle 13 at the surface level of the substrate W passes through the rotation center P of the substrate W. Since the moving means is configured to do so, even when the substrate size is different, or when it is desired to change the discharge position of the dissolution liquid such as in the case of multilayer coating, the inclination angle of the thin film dissolution nozzle with respect to the rotation direction of the substrate or the radial direction of the substrate one It can be discharged in solution while maintaining the. Therefore, the quality of removal of the unnecessary thin film from the outer peripheral edge of the substrate can be maintained depending on the discharge position of the dissolving liquid onto the substrate. In addition, when it is desired to change the discharge position of the solution, the thin film dissolution nozzle 13 is in the discharge position within a range in which the inclination angle of the thin film dissolution nozzle with respect to the rotation direction of the substrate and the radial direction of the substrate can be kept constant to some extent. When moving in the horizontal direction, the arrival point Q at the surface level of the substrate W of the solution discharged from the thin film dissolution nozzle 13
The moving means may be configured so that the virtual extension line L of the movement locus of (1) passes near the rotation center P of the substrate W.

【0026】上記実施例では、薄膜溶解ノズル13から
吐出された溶解液の基板Wの表面レベルでの到達点の移
動軌跡Tの仮想延長線が基板Wの回転中心Pを通過する
ように構成するのに、先端に薄膜溶解ノズル13を設け
たアーム10をパルスモータ7で回転させ、基板Wの半
径よりも大きい半径の円弧状の移動軌跡Tになるように
構成しているが、パルスモータ7に代えてサーボモータ
とかロッドレスシリンダを利用した揺動構成などの回転
駆動構成を用いても良い。また、このような円弧状の移
動軌跡Tとなるように構成すれば、装置スペースを小さ
くできる利点が有るが、例えば、アーム10を一体的に
設けた内ネジ部材をモータによって駆動回転するネジ軸
に外嵌するとともに、内ネジ部材を直線的に移動するガ
イドを設ける、いわゆるボールネジの構成を採用し、直
線の移動軌跡となるようにノズル移動手段を構成するも
のでも良い。
In the above-mentioned embodiment, the virtual extension line of the moving trajectory T of the arrival point of the solution discharged from the thin film dissolution nozzle 13 at the surface level of the substrate W passes through the rotation center P of the substrate W. However, the arm 10 having the thin film melting nozzle 13 at the tip is rotated by the pulse motor 7 so as to form an arc-shaped movement locus T having a radius larger than the radius of the substrate W. Instead of this, a rotary drive structure such as a swing structure using a servomotor or a rodless cylinder may be used. Further, if it is configured so as to have such an arc-shaped movement locus T, there is an advantage that the apparatus space can be made small. For example, an internal screw member integrally provided with the arm 10 is driven by a motor to rotate a screw shaft. It is also possible to adopt a so-called ball screw configuration in which a guide that linearly moves the inner screw member is provided while being externally fitted to the nozzle, and the nozzle moving means may be configured to have a linear movement locus.

【0027】[0027]

【発明の効果】以上の説明から明らかなように、請求項
1に係る発明の回転式基板塗布装置によれば、薄膜溶解
ノズルから吐出される溶解液の基板表面の到達点の位置
の移動にかかわらず、薄膜溶解ノズルから基板表面への
溶解液の吐出方向が変化しないから、基板サイズの違い
に対応させたり、多層コーティングの場合で層ごとに位
置を変えたりしても、同じ状態で薄膜に溶解液を吐出で
き、品質を向上できるようになった。
As is apparent from the above description, according to the rotary substrate coating apparatus of the first aspect of the present invention, it is possible to move the position of the reaching point of the substrate surface of the solution discharged from the thin film dissolving nozzle. Regardless, the direction in which the solution is discharged from the thin film dissolution nozzle to the surface of the substrate does not change, so the thin film will remain in the same state even if the substrate size is changed or the position is changed layer by layer in the case of multilayer coating. It is possible to discharge the dissolution liquid to the and improve the quality.

【0028】また、請求項2に係る発明の回転式基板塗
布装置によれば、基板サイズの違いに対応させるための
薄膜溶解ノズルからの溶解液の到達点の位置変更や多層
コーティングの場合の層ごとにおける薄膜溶解ノズルか
らの溶解液の到達点の位置変更などに際し、薄膜溶解ノ
ズルから吐出された溶解液の基板表面レベルにおける到
達点となるべき位置を、設定入力手段から設定しなおす
だけで、ノズル移動手段の移動量が制御され、その到達
点の位置が自動的に設定位置になるように制御される。
したがって、容易な操作でもって精度良く基板の外周縁
の不要薄膜を除去できるようになった。
According to the rotary type substrate coating apparatus of the second aspect of the present invention, the position of the arrival point of the solution from the thin film dissolving nozzle for changing the size of the substrate is changed, and the layer in the case of multilayer coating is applied. When changing the position of the reaching point of the dissolving liquid from the thin film dissolving nozzle in each, the position to be the reaching point at the substrate surface level of the dissolving liquid discharged from the thin film dissolving nozzle, just by resetting from the setting input means, The amount of movement of the nozzle moving means is controlled, and the position of the reaching point is automatically controlled to the set position.
Therefore, the unnecessary thin film on the outer peripheral edge of the substrate can be removed with high accuracy by an easy operation.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る回転式基板塗布装置の実施例を示
す平面図である。
FIG. 1 is a plan view showing an embodiment of a rotary type substrate coating apparatus according to the present invention.

【図2】図1のA−A線から見た断面図である。FIG. 2 is a sectional view taken along line AA in FIG.

【図3】要部の一部切欠正面図である。FIG. 3 is a partially cutaway front view of a main part.

【図4】要部の背面図である。FIG. 4 is a rear view of the main part.

【図5】要部の斜視図である。FIG. 5 is a perspective view of a main part.

【図6】図1のB−B線矢視図である。FIG. 6 is a view taken along the line BB of FIG.

【図7】ブロック図である。FIG. 7 is a block diagram.

【符号の説明】[Explanation of symbols]

4…基板保持手段 7…ノズル移動手段を構成するパルスモータ 13…薄膜溶解ノズル 22…角度検出手段 23…制御手段としてのコントローラ L…移動軌跡の仮想延長線 P…基板の回転軸芯 Q…到達点 T…移動軌跡 W…基板 4 ... Substrate holding means 7 ... Pulse motor constituting nozzle moving means 13 ... Thin film melting nozzle 22 ... Angle detecting means 23 ... Controller as control means L ... Virtual extension line of moving path P ... Rotation axis core Q of substrate Point T ... Movement trajectory W ... Substrate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 円形の基板を回転駆動可能に保持する基
板保持手段と、 前記基板保持手段に保持された前記基板の回転中心相当
箇所に塗布液を供給する塗布液供給手段と、 表面に回転塗布によって薄膜を形成した後の基板の外周
縁部に溶解液を吐出して基板外周縁部の不要薄膜を溶解
除去する薄膜溶解ノズルと、 前記薄膜溶解ノズルを、平面視で基板外周縁部よりも外
方に位置する待機位置と平面視で基板に重複する基板外
周縁部の吐出位置とにわたって水平方向に移動するノズ
ル移動手段と、 を備えた回転式基板塗布装置において、 前記ノズル移動手段を、前記薄膜溶解ノズルを吐出位置
にある状態で水平方向に移動するときに前記薄膜溶解ノ
ズルから吐出された溶解液の前記基板の表面レベルでの
到達点の移動軌跡の仮想延長線が前記基板の回転中心ま
たはその近傍を通過するように構成したことを特徴とす
る回転式基板塗布装置。
1. A substrate holding means for holding a circular substrate rotatably and rotatably, a coating liquid supplying means for supplying a coating liquid to a portion corresponding to the center of rotation of the substrate held by the substrate holding means, and a surface rotating device. A thin film dissolving nozzle that discharges a dissolving liquid to the outer peripheral edge of the substrate after forming a thin film by coating to dissolve and remove an unnecessary thin film on the outer peripheral edge of the substrate, and the thin film dissolving nozzle from the outer peripheral edge of the substrate in plan view. A nozzle moving unit that horizontally moves between a standby position located outside and a discharge position of a substrate outer peripheral edge portion that overlaps the substrate in a plan view. , A virtual extension line of a movement locus of a reaching point at the surface level of the substrate of the solution discharged from the thin film dissolution nozzle when the thin film dissolution nozzle is moved in the horizontal direction in the discharge position is Rotary substrate coating apparatus characterized by being configured to pass through the rotation center or near the plate.
【請求項2】 前記薄膜溶解ノズルから吐出された溶解
液の基板の表面レベルにおける到達点となるべき位置を
設定入力する設定入力手段と、前記設定入力手段での設
定入力に基づいて前記ノズル移動手段の移動量を制御す
る制御手段とを備えた請求項1に記載の回転式基板塗布
装置。
2. A setting input means for setting and inputting a position to be a reaching point on the surface level of the substrate of the dissolving liquid discharged from the thin film dissolving nozzle, and the nozzle movement based on the setting input by the setting input means. The rotary substrate coating apparatus according to claim 1, further comprising a control unit that controls a moving amount of the unit.
JP03556496A 1996-01-29 1996-01-29 Rotary substrate coater Expired - Fee Related JP3890393B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03556496A JP3890393B2 (en) 1996-01-29 1996-01-29 Rotary substrate coater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03556496A JP3890393B2 (en) 1996-01-29 1996-01-29 Rotary substrate coater

Publications (2)

Publication Number Publication Date
JPH09213616A true JPH09213616A (en) 1997-08-15
JP3890393B2 JP3890393B2 (en) 2007-03-07

Family

ID=12445255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03556496A Expired - Fee Related JP3890393B2 (en) 1996-01-29 1996-01-29 Rotary substrate coater

Country Status (1)

Country Link
JP (1) JP3890393B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012702B2 (en) 2002-01-09 2006-03-14 Dainippon Screen Mfg. Co., Ltd. Measuring apparatus
JP2006100514A (en) * 2004-09-29 2006-04-13 Dainippon Screen Mfg Co Ltd Removing device, protective film forming device, substrate processing system and removing method
JP2009099851A (en) * 2007-10-18 2009-05-07 Sokudo:Kk Developing device
US7682463B2 (en) 2004-03-16 2010-03-23 Dainippon Screen Mfg. Co., Ltd. Resist stripping method and resist stripping apparatus
JP2014053622A (en) * 2013-10-01 2014-03-20 Sokudo Co Ltd Development apparatus
JP2015099925A (en) * 2014-12-15 2015-05-28 株式会社Screenセミコンダクターソリューションズ Development method
US9687874B2 (en) 2007-11-30 2017-06-27 Screen Semiconductor Solutions Co., Ltd. Multi-story substrate treating apparatus with flexible transport mechanisms and vertically divided treating units
US9993840B2 (en) 2015-04-24 2018-06-12 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
US10290521B2 (en) 2007-06-29 2019-05-14 Screen Semiconductor Solutions Co., Ltd. Substrate treating apparatus with parallel gas supply pipes and a gas exhaust pipe
CN109848374A (en) * 2019-01-17 2019-06-07 贵州航天风华精密设备有限公司 A kind of resin sand sand core 3D printing device based on double circle rotation controls

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012702B2 (en) 2002-01-09 2006-03-14 Dainippon Screen Mfg. Co., Ltd. Measuring apparatus
US7682463B2 (en) 2004-03-16 2010-03-23 Dainippon Screen Mfg. Co., Ltd. Resist stripping method and resist stripping apparatus
JP2006100514A (en) * 2004-09-29 2006-04-13 Dainippon Screen Mfg Co Ltd Removing device, protective film forming device, substrate processing system and removing method
US10290521B2 (en) 2007-06-29 2019-05-14 Screen Semiconductor Solutions Co., Ltd. Substrate treating apparatus with parallel gas supply pipes and a gas exhaust pipe
JP2009099851A (en) * 2007-10-18 2009-05-07 Sokudo:Kk Developing device
US8956695B2 (en) 2007-10-18 2015-02-17 Screen Semiconductor Solutions Co., Ltd. Developing method
US9581907B2 (en) 2007-10-18 2017-02-28 Screen Semiconductor Solutions Co., Ltd. Developing apparatus
US9687874B2 (en) 2007-11-30 2017-06-27 Screen Semiconductor Solutions Co., Ltd. Multi-story substrate treating apparatus with flexible transport mechanisms and vertically divided treating units
JP2014053622A (en) * 2013-10-01 2014-03-20 Sokudo Co Ltd Development apparatus
JP2015099925A (en) * 2014-12-15 2015-05-28 株式会社Screenセミコンダクターソリューションズ Development method
US9993840B2 (en) 2015-04-24 2018-06-12 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method
CN109848374A (en) * 2019-01-17 2019-06-07 贵州航天风华精密设备有限公司 A kind of resin sand sand core 3D printing device based on double circle rotation controls
CN109848374B (en) * 2019-01-17 2024-04-23 贵州航天风华精密设备有限公司 Resin sand core 3D printing device based on double-circle rotation control

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