JP3490315B2 - Development processing method and development processing apparatus - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a development processing method and a development processing apparatus for performing a development process after exposure on a substrate such as a semiconductor wafer.

[0002]

2. Description of the Related Art For example, in a coating / developing processing system for a photolithography process in a semiconductor device manufacturing process, a resist coating process for forming a resist film on the surface of a semiconductor wafer (hereinafter referred to as "wafer") An exposure process is performed on the coated wafer, and then a developing process for developing the wafer is performed.

In this developing process, a wafer having a predetermined pattern exposed, post-exposure bake process and cooling process is carried into a developing process unit and mounted on a spin chuck. The developing solution is supplied from the developing solution supply nozzle and applied to the entire surface of the wafer so as to have a thickness of, for example, 1 mm to form a developing solution paddle. After the developer paddle has been formed, it is allowed to stand for a predetermined time,
Development processing proceeds by natural convection. Thereafter, the wafer is rotated by the spin chuck to shake off the developing solution, and then the rinse solution is discharged from the cleaning solution supply nozzle to wash away the developing solution remaining on the wafer. afterwards,
The spin chuck is rotated at a high speed, the developing solution and the rinse solution remaining on the wafer are blown off, and the wafer is dried. As a result, a series of development processing ends.

[0004]

By the way, during the developing process, the developing solution is merely kept stationary on the wafer, and the developing speed is dependent on the natural convection of the developing solution. Therefore, the line width and the uniformity after development are largely influenced by the conditions when the developer paddle is formed. Further, on the wafer, the developer in which the resist has already dissolved and the developer in which the resist has not dissolved exist without being mixed so much, so there is a problem that the development processing speed is slow, and it is desired to shorten the development time. Has been done.

Further, when the development processing speed is low, the exposure amount must be increased in the previous exposure process in order to maintain the predetermined line width and uniformity of the circuit pattern.

The present invention has been made in view of the above circumstances, and it is possible to accelerate development and realize a reduction in development processing time or a reduction in the exposure amount in exposure processing, and there is little variation in development processing. An object of the present invention is to provide a development processing method and a development processing apparatus having high uniformity of line width.

[0007]

In order to solve the above-mentioned problems, according to a first aspect of the present invention, there is provided a development processing method for applying a developing solution to a substrate after exposure processing to perform the development processing. , After the developer is dropped from the nozzle to apply the developer to the substrate, the tip of the nozzle is brought into contact with the developer to cause relative movement between the substrate and the nozzle, and the developer on the substrate is stirred. A development processing method is provided.

[0008]

[0009]

[0010]

According to a second aspect of the present invention, there is provided a development processing apparatus for applying a developing solution to a substrate after an exposure process to perform a developing process, the developing process comprising supplying the developing solution to a substrate and applying the developing solution. A liquid supply nozzle, a moving means for moving at least one of the substrate and the nozzle, a developing solution is dropped from the nozzle to apply the developing solution to the substrate, and then the nozzle is brought into contact with the developing solution on the substrate. A development processing apparatus is provided, comprising: a control unit that controls the position of the nozzle and the moving unit so as to cause relative movement between the substrate and the nozzle.

According to a third aspect of the present invention, there is provided a developing processing apparatus for applying a developing solution to a substrate after an exposure process to perform the developing process, the developing solution supplying nozzle for supplying the developing solution to the substrate. Of the nozzle so that the tip of the nozzle comes into contact with the developing solution on the substrate and not the substrate .
A mechanism for bringing the tip portion and the substrate close to each other, and the nozzle after the developing solution is dropped from the nozzle to apply the developing solution to the substrate.
And a relative movement mechanism for causing relative movement between the substrate and the nozzle in a state where the tip of the substrate is in contact with the developing solution on the substrate.
According to a fourth aspect of the present invention, development is performed on the substrate after the exposure processing.
A development processing device for applying a liquid to perform development processing, comprising:
A developing solution supply nozzle for supplying the developing solution to the plate, and
The tip of the nozzle contacts the developer on the substrate and
The tip of the nozzle and the substrate should be in a position where they do not contact
Drive mechanism to adjust the distance between
After applying the developer to the substrate by dropping,
The substrate and nozzle with their edges in contact with the developer on the substrate
And a relative movement mechanism that causes relative movement between
There is provided a development processing device characterized by

According to a fifth aspect of the present invention, there is provided a development processing apparatus for applying a developing solution to a substrate after an exposure process to perform the developing process, the developing process comprising supplying the developing solution to the substrate and applying the developing solution. A liquid supply nozzle, a drive mechanism for adjusting the distance between the tip of the developer supply nozzle and the substrate, the height of the tip of the developer supply nozzle when supplying the developer to the substrate, and the developer on the substrate. , The tip is immersed in the developer on the substrate.
The relative movement between the substrate and the nozzle
And a control means for controlling the height for stirring the developing solution on the substrate .

According to the present invention, the developing solution is dropped from the nozzle to apply the developing solution to the substrate, and then the tip of the nozzle is brought into contact with the developing solution to cause relative movement between the substrate and the nozzle. The developing process is advanced by stirring the developing solution on the substrate. Therefore, by stirring the developing solution with the developing solution nozzle, the developing solution in which the resist is already dissolved and the developing solution in which the resist is not dissolved can be sufficiently mixed on the substrate, and the progress of the development can be made uniform over the entire surface of the substrate. Can be done. Therefore, the development speed can be increased, and the development processing time can be shortened. In addition, as a result of the faster development speed, in the previous exposure process,
The exposure amount in the exposure process can be reduced. Furthermore, as a result of uniform development, the variation in development is small and the uniformity of line width can be improved. further,
Since the developing solution on the substrate is agitated by the nozzle in this way, the above effects can be obtained with almost no changes to existing equipment.

In the above-mentioned development processing method, relative movement between the substrate and the nozzle is carried out by making the nozzle stationary and rotating the substrate, or by making the substrate stationary and rotating the nozzle.
Preferably, the relative rotational movement is caused by either rotating the substrate and the nozzle in opposite directions. Further, in order to effectively stir the developing solution, it is preferable that the tip portion of the nozzle is immersed in the developing solution. Further, when stirring the developing solution, the height of the tip of the nozzle is preferably 0.3 to 3 mm, and more preferably 0.5 to 1.0 mm from the viewpoint of obtaining a more uniform line width. preferable. Furthermore, when the relative rotational movement is generated between the substrate and the nozzle, the rotational speed is preferably 20 rpm or more and less than 40 rpm.

Further, in the above-mentioned developing device, the moving means may have a rotating mechanism for rotating at least one of the substrate and the nozzle to cause relative rotational movement between them. It is also possible to have a scanning mechanism that scans at least one of the substrate and the nozzle to cause relative translation between them. It is preferable that the nozzle has a rod-shaped main body having a length equal to or larger than the diameter of the substrate, and a large number or slit-shaped developer discharge ports along the lower surface thereof. Further, since the nozzle comes into contact with the developing solution, it is preferable to further have a nozzle cleaning mechanism.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 are views showing the overall configuration of a semiconductor wafer coating / developing system in which an embodiment of the present invention is adopted. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a back view. Each one is shown.

As shown in FIG. 1, this coating / developing processing system 1 carries in a plurality of wafers W as wafers to be processed in a wafer cassette CR, for example, from the outside in units of 25 wafers, or unloads from the system. And a cassette station 10 for loading / unloading the wafer W to / from the wafer cassette CR, and various single-wafer processing units for performing a predetermined process on the wafer W one by one in the coating and developing process. An interface unit 12 for transferring a wafer W between the processing stations 11 arranged in multiple stages at predetermined positions and an exposure apparatus (not shown) provided adjacent to the processing station 11 is integrally connected. Have a configuration.

The cassette station 10 shown in FIG.
As shown in FIG.
At the position 0a, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR are mounted in a line in the X direction with the respective wafer entrances / outlets facing the processing station 11 side. A wafer transfer body 21 that is movable in the wafer arrangement direction (Z direction: vertical direction) of the wafers housed therein selectively accesses each wafer cassette CR.

Further, the wafer carrier 21 is configured to be rotatable in the θ direction, and as will be described later, an alignment unit (ALIM) belonging to the multi-stage unit section of the third processing unit group G ₃ on the processing station 11 side. The extension unit (EXT) is also accessible.

As shown in FIG. 1, the processing station 11 is provided with a vertical transfer type main wafer transfer mechanism 22 equipped with a wafer transfer device, and all processing units are surrounded by one set or a plurality of sets. Are arranged in multiple stages.

As shown in FIG. 3, the main wafer transfer mechanism 22 is equipped with a wafer transfer device 46 inside the cylindrical support 49 so as to be vertically movable (Z direction). The cylindrical support 49 is connected to a rotating shaft of a motor (not shown), and is rotated integrally with the wafer transfer device 46 about the rotating shaft by the rotational driving force of the motor, thereby transferring the wafer. The device 46 is rotatable in the θ direction.

The wafer transfer device 46 is provided with a plurality of holding members 48 which are movable in the front-back direction of the transfer base 47, and these holding members 48 realize the transfer of the wafer W between the processing units. .

As shown in FIG. 1, in this example, 5
One processing unit group G ₁ , G ₂ , G ₃ , G ₄ , G ₅ can be arranged, and the multi-stage unit of the first and second processing unit groups G ₁ , G ₂ is the front of the system (see FIG. 1). The multi-stage unit of the _third processing unit group G ₃ is arranged adjacent to the cassette station 10, and the multi-stage unit of the fourth processing unit group G ₄ is arranged adjacent to the interface section 12. The multi-stage unit of the _fifth processing unit group G ₅ can be arranged on the back side.

As shown in FIG. 2, in the first processing unit group G ₁ , two spinner type processing units, for example, a resist coating unit (wherein the wafer W is placed on the spin chuck in the cup CP to perform a predetermined process). The COT) and the development processing unit (DEV) are stacked in two stages in order from the bottom. Also in the second processing unit group G ₂ , two spinner type processing units, for example, a resist coating unit (CO
T) and development processing unit (DEV) are 2 from the bottom
It is stacked in columns. These resist coating units (C
Since the drainage of the resist solution is troublesome both mechanically and in maintenance, it is preferable to dispose the OT) in the lower stage. However, it is, of course, possible to arrange them in the upper stage as needed.

As shown in FIG. 3, in the third processing unit group G ₃ , an oven type processing unit for carrying out predetermined processing by placing the wafer W on the mounting table SP, for example, a cooling unit (COL) for carrying out cooling processing. , An adhesion unit (AD) that performs a so-called hydrophobic treatment for improving the fixability of the resist, an alignment unit (ALIM) that performs alignment, an extension unit (EX
T), a pre-baking unit (PREBAKE) that performs a heating process before the exposure process, and a post-baking unit (POBAKE) that performs a heating process after the exposure process are stacked in, for example, eight stages from the bottom. Also in the fourth processing unit group G ₄ , an oven-type processing unit, for example, a cooling unit (COL), an extension cooling unit (EXTCOL), an extension unit (EXT), a cooling unit (COL), a prebaking unit (PREBAKE). ) And a post-baking unit (POBAKE) are stacked in order from the bottom, for example, in eight stages.

The low cooling unit of thus treated temperature (COL), arranged extension and cooling unit a (EXTCOL) in the lower stage, high processing temperatures flop
By arranging the rebaking unit (PREBAKE), the postbaking unit (POBAKE), and the adhesion unit (AD) in the upper stage, thermal mutual interference between the units can be reduced. Of course, a random multi-stage arrangement may be used.

As shown in FIG. 1, the interface section 12 has the same size as the processing station 11 in the depth direction (X direction), but is set to have a smaller size in the width direction. A portable pickup cassette CR and a stationary buffer cassette BR are provided on the front of the interface unit 12.
On the other hand, a peripheral exposure device 23 is arranged on the back side, and a wafer carrier 24 is provided on the central part. The wafer carrier 24 moves in the X and Z directions to move both cassettes CR, BR and the peripheral exposure apparatus 2.
It is designed to access 3. The wafer carrier 24 is configured to be rotatable also in the θ direction, and an extension unit (EXT) belonging to the multi-stage unit of the fourth processing unit group G ₄ on the processing station 11 side, and further Can also access a wafer transfer table (not shown) on the adjacent exposure apparatus side.

Further, in the coating / developing processing system 1,
As shown in FIG. 1, the multi-stage unit of the fifth processing unit group G ₅ indicated by the broken line can be arranged on the back side of the main wafer transfer mechanism 22 as described above.
The multi-stage unit of the processing unit group G ₅ is a guide rail 2
5 is configured so that it can be shifted laterally when viewed from the main wafer transfer mechanism 22. Therefore, even when the multi-stage unit of the fifth processing unit group G ₅ is provided as shown in the figure, by sliding along the guide rail 25, the space is secured, so that the main wafer transfer mechanism 22 can be secured. On the other hand, maintenance work can be easily performed from the back.

Next, the development processing unit (DEV) in this embodiment will be described. 4 and 5 are a schematic cross-sectional view and a schematic plan view showing the overall configuration of the development processing unit (DEV).

An annular cup CP is arranged in the center of the development processing unit (DEV), and a spin chuck 52 is arranged inside the cup CP. The spin chuck 52 is rotationally driven by a drive motor 54 while holding the wafer W fixed by vacuum suction. The drive motor 54 is disposed in the opening of the unit bottom plate 50 so as to be able to move up and down, and is connected to the up-and-down drive means 60 and an up-and-down guide means 62, which are air cylinders, for example, via a cap-shaped flange member 58 made of aluminum. . A cylindrical cooling jacket 64 made of, for example, SUS is attached to the side surface of the drive motor 54, and the flange member 58 is attached so as to cover the upper half of the cooling jacket 64.

During application of the developing solution, the lower end of the flange member 58 is in close contact with the unit bottom plate 50 near the outer periphery of the opening of the unit bottom plate 50, thereby sealing the inside of the unit.
When the wafer W is transferred between the spin chuck 52 and the main wafer transfer mechanism 22, the lift drive mechanism 60 lifts the drive motor 54 or the spin chuck 52 upward so that the lower end of the flange member 58 causes the unit bottom plate 5 to move.
It starts to float from 0. A window 70 for the wafer holding member 48 to enter is formed in the housing of the development processing unit (DEV).

A developing solution supply nozzle 86 for supplying the developing solution to the surface of the wafer W is connected to a developing solution supply section (not shown) via a developing solution supply pipe 88. The developing solution supply nozzle 86 is detachably attached to the tip of the nozzle scan arm 92. This scan arm 63
Is attached to the upper end of a vertical support member 96 that is horizontally movable on a guide rail 94 that is laid in one direction (Y direction) on the unit bottom plate 50.
11 moves in the Y direction integrally with the vertical support member 96.

The developing solution supply nozzle 86 is provided so as to extend in the horizontal direction, and at the time of applying the developing solution, as shown in FIG. 4, the central portion of the wafer W corresponds to the diameter of the wafer W. It is located above. The developing solution supply nozzle 86 can be moved in the vertical direction (Z direction) by the Z-axis drive mechanism 112. Developer supply nozzle 86
6, has a plurality of ejection openings 87 on the lower surface thereof, and the ejected developing solution is formed into a band shape as a whole. When the developing solution is applied, the developing solution is discharged from the developing solution supply nozzle 86 located above the wafer W in a strip shape, and the wafer W is rotated once, for example, so that the developing solution is applied to the entire surface of the wafer W. Applied to.
Further, when discharging the developing solution, the developing solution supply nozzle 86 may be scanned along the guide rail 65 without rotating the wafer W.

The drive mechanism of the development processing unit (DEV) is controlled by the controller 110. Specifically, the drive motor 54 and the Y-axis drive mechanism 111 and the Z-axis drive mechanism 112 include the control unit 110.
It is driven by the command of. In this embodiment, the control unit 11
Zero controls the Z-axis drive mechanism 112 so that the lower end of the developing solution supply nozzle 86 is adjusted so that the lower end of the developing solution supply nozzle 86 comes into contact with the developing solution puddle on the wafer W, preferably the immersion is performed. When the developing solution is discharged, the driving motor 54 rotates the wafer W or discharges the developing solution while discharging the developing solution with the nozzle 86 positioned at the center of the wafer W by the Y-axis drive mechanism 111. Meanwhile, the Y-axis drive mechanism 111 controls the developing solution supply nozzle 86 to scan in the Y-axis direction. After the supply of the developing solution is completed, the controller 110 causes the drive motor 54 to rotate the wafer W for a predetermined time, or the developing solution supply nozzle 86 is set to Y.
The axis drive mechanism 111 scans in the Y-axis direction to cause relative movement between the wafer W and the developing solution supply nozzle 86 to stir the developing solution.

At this time, it is preferable that the tip of the developer supply nozzle 86 be cut out toward the end of the developer L on the substrate W, as shown in FIG. This reduces the risk that the developer will dissipate when the developer is stirred. Further, as shown in FIG. 7B, when the developer L is stirred by the developer supply nozzle 86, the relative rotation speed r between the developer supply nozzle 86 and the wafer W is 20 to 40 rpm. A degree is preferable. Further, as shown in FIG. 7C, the height h of the tip of the developer supply nozzle 86 from the substrate is preferably 0.3 to 3 mm, and more preferably 0.5 to 1.0 mm. . Although depending on the type of the developing solution, the developing solution supply nozzle 8 is used when the thickness of the developing solution on the wafer W is about 1.2 mm which is the normal height of the solution.
6 The optimum height of the tip is about 0.7 mm. Such stirring of the developing solution is sufficient for about 30 seconds.

Further, the development processing unit (DEV) is
It has a rinse nozzle 102 for discharging the cleaning liquid. This rinse nozzle 102 is provided on the guide rail 94 so as to be movable in the Y direction.
It is attached to the tip of 04. As a result, after the development process with the developing solution is completed, the cleaning solution is moved onto the wafer W and the cleaning solution is ejected onto the wafer W.

The developing solution supply nozzle 86 is provided in the nozzle standby portion 1
15 (FIG. 5), the nozzle cleaning mechanism 12 for cleaning the nozzle 86 is provided in the standby portion 115.
0 is provided. Nozzle cleaning mechanism (nozzle bath) 1
20 is, as shown in (a), (b) and (c) of FIG.
A bath chamber 122, in which the tip portion 86a of the developing solution supply nozzle 86 is mounted, is formed in the main body 121, and a drain groove 123 is formed in the bottom surface of the bath chamber 122. It is connected to the pipe 124. The nozzle cleaning mechanism (nozzle bath) 120 may be provided adjacent to the nozzle standby unit 115.

A pair of supply pipes 125 for supplying a cleaning liquid (pure water) and an inert gas are provided on the upper side wall of the bath chamber 122, and the developing liquid is supplied inside the pair of supply pipes 125. A large number of cleaning nozzles 126 for discharging a cleaning liquid (pure water) and an inert gas are formed at the tip portion 86a of the nozzle 86.

The nozzle cleaning mechanism (nozzle bath) 120 is
With this configuration, the developer supply nozzle 86
When the front end portion 86a of the above is installed in the bath chamber 122, the cleaning liquid (pure water) or the inert gas is supplied through the pair of supply pipes 125, and the cleaning nozzle 126 causes the developing solution supply nozzle 8
6 is discharged to the tip portion 86a. Further, the developing solution is also discharged from the tip portion 86a of the developing solution supply nozzle 86 itself for cleaning. The cleaning liquid (pure water) or the developing liquid after these cleaning is
It is discharged by the drain pipe 124 through the drain groove 123.

Next, the operation of the developing processing in the developing processing unit (DEV) thus constructed will be described. The wafer W having a predetermined pattern exposed and subjected to post-exposure bake processing and cooling processing is transferred to directly above the cup CP by the main wafer transfer mechanism 22 and vacuum-adsorbed by the spin chuck 52 lifted by the lifting drive mechanism 60. .

Next, the developing solution supply nozzle 86 changes the wafer W.
Of the wafer W, the wafer W is rotated once, for example, while the developing solution is discharged from the developing solution supply nozzle 86 in a strip shape, so that the developing solution is spread over the entire surface of the wafer W by, for example, 1.2 m.
It is applied so as to have a thickness of m. Further, the developer may be discharged while scanning the developer supply nozzle 86 along the guide rail 94.

After discharging the developing solution in this manner, the wafer W is rotated while the tip of the developing solution supply nozzle 86 is in contact with the developing solution on the wafer W, preferably in a state of being immersed, or The nozzle 86 is scanned to cause relative movement between the wafer W and the developing solution supply nozzle 86, and the developing solution is stirred for a predetermined time. In this case, the height of the tip of the developer supply nozzle 86 may be set to the height at the time of stirring from the liquid piling stage, or the nozzle 86 at the time of stirring.
May be lowered to set the height.

By thus causing the relative movement between the wafer W and the developing solution supply nozzle 86 while immersing the tip of the nozzle 86 in the developing solution, a stirring flow as shown in FIG. In the above, the developing solution in which the resist is already dissolved and the developing solution in which the resist is not dissolved can be sufficiently mixed, and the development can be uniformly performed over the entire surface of the wafer W. Therefore, the development speed can be increased, and the development processing time can be shortened. In addition, as a result of the higher development speed, the exposure amount in the exposure process in the previous exposure process can be reduced. Furthermore, as a result of uniform development, the variation in development is small and the uniformity of line width can be improved.

Since the developing solution supply nozzle 86 stirs the developing solution on the wafer W in this manner, the stirring of the developing solution can be promoted with almost no change to the existing equipment, and the above effects can be obtained. it can.

After the developing process is completed for a predetermined time in this way, the wafer W is rotated by the spin chuck 52 and the developing solution is shaken off. After that, the rinse nozzle 102 is moved above the wafer W, the cleaning liquid is discharged from the rinse nozzle 102, and the developing liquid remaining on the wafer W is washed away.

Next, the spin chuck 52 is rotated at a high speed, the developing solution and the cleaning solution remaining on the wafer W are blown off, and the wafer W is dried. As a result, a series of development processing ends.

After that, the developing solution supply nozzle 86 to which the developing solution has adhered is moved to the standby position 115 by stirring the developing solution, and is positioned in the nozzle cleaning mechanism (nozzle bath) 120. Then, here, the cleaning liquid is supplied to the tip of the developing liquid supply nozzle 86 for cleaning. In this way, the developer supply nozzle 8
By cleaning No. 6, the developer adhering to the developer supply nozzle 87 by stirring the developer can be promptly removed, and the next developing process can be immediately dealt with.

Next, the results of actual development by applying the present invention will be described. Here, the nozzle having the shape shown in FIG. 6 is used, and after the liquid is piled up on the wafer at a height of 1.2 mm, the tip of the developing solution supply nozzle is dipped in the developing solution to rotate the wafer to develop the developing solution. Was stirred for 45 seconds. The height of the tip of the nozzle from the wafer and the rotation speed of the wafer were set under various conditions to perform such processing.

The results are shown in FIGS. 10 and 11. FIG. 10 shows line width variation (3σ) and critical dimension (CD) values when the rotation speed is kept constant at 30 rpm and the height of the nozzle tip from the wafer is changed to 0.35 to 1.4 mm. FIG. 11 is a diagram in which the height of the nozzle tip from the wafer is kept constant at 0.7 mm and the line speed variation (3σ) and the critical dimension (when the wafer rotation speed is changed between 20 and 40 rpm). It is a figure which shows the value of (CD).

As shown in FIG. 10, it was confirmed that the line width variation (3σ) was smaller than that of the conventional developing method in which the developing solution was not stirred regardless of the height of the nozzle. Then, it was confirmed that the variation of the line width was particularly small when the height of the nozzle tip was 0.7 mm from the wafer. Judging from this graph, the tip height of the nozzle is 0.5-
It is considered that about 1.0 mm is more preferable.

Further, as shown in FIG. 11, the rotation speed is 2
It was confirmed that the line width variation was small to some extent even at 0 rpm, but the line width variation was particularly small when the rotation speed was 30 rpm. However, at 40 rpm, the variation in line width was rather large. From this, it is considered that the rotation speed at the time of stirring the developing solution is preferably 20 rpm or more and less than 40 rpm.

The height of the tip of the nozzle from the wafer is 0.7 m
FIG. 12 shows the result of comparing the line width variation (3σ) between the case of the embodiment in which m is set and the rotation speed is 30 rpm and the case of the comparative example in which the developer is not stirred. As shown in this figure, it was clearly shown that the variation of the line width is reduced by adopting the present invention.

The present invention is not limited to the above embodiment, and various modifications can be made. For example, the developing solution supply nozzle 86 is not limited to the above-mentioned one, and for example, as shown in FIG.
As shown in FIG. 3A, a slit-shaped developer discharge port 87 '
May be included. Further, the developing solution supply nozzle is not limited to one extending over the diameter of the wafer, and may have a length corresponding to the radius of the wafer as shown in FIG. 13B, for example. Further, the shape of the nozzle need not be linear in the width direction, and may be curved, for example, as shown in (c) and (d) of FIG. If this curve is formed so as to receive the developing solution when the wafer and the nozzle are relatively rotated, the risk of the developing solution falling can be reduced.

In this embodiment, the wafer is rotated and the developing solution supply nozzle is stopped to stir the developing solution, or
Alternatively, the wafer is stopped and the developing solution supply nozzle is scanned to stir the developing solution, but the invention is not limited to this, the developing solution supply nozzle may be rotated, the wafer may be scanned, and both May be rotated or scanned. However, if the wafer is rotated or the nozzle is scanned, the existing equipment can be effectively used, and it is necessary to newly provide a mechanism for rotating the developing solution supply nozzle and a mechanism for scanning the wafer. There is no advantage. Further, the relative movement between the wafer and the developing solution supply nozzle at the time of stirring the developing solution is not limited to the rotational movement and the parallel movement as described above, and other movement modes may be used.

Furthermore, in the above embodiment, the coating / developing processing system for semiconductor wafers has been described, but the present invention is also applied to a coating / developing processing system for substrates other than semiconductor wafers, for example, LCD substrates. Can be applied.

[0057]

As described above, according to the present invention,
After the developer is dropped from the nozzle to apply the developer to the substrate, the tip of the nozzle is brought into contact with the developer to cause relative movement between the substrate and the nozzle to stir the developer on the substrate. As a result, the developing process proceeds, so that by stirring the developing solution with the developing solution nozzle, it is possible to sufficiently mix the developing solution in which the resist is already dissolved and the developing solution in which the resist is not dissolved on the substrate. Can be uniformly performed over the entire surface of the substrate. Therefore, the development speed can be increased, and the development processing time can be shortened. In addition, as a result of the higher development speed, the exposure amount in the exposure process in the previous exposure process can be reduced. Furthermore, as a result of uniform development, the variation in development is small and the uniformity of line width can be improved. Further, since the developing solution on the substrate is agitated by the nozzle in this way, the above effects can be obtained with almost no change to existing equipment.

[Brief description of drawings]

FIG. 1 is a plan view showing the overall configuration of a semiconductor wafer coating and developing treatment system to which the present invention is applied.

FIG. 2 is a front view showing the overall configuration of a semiconductor wafer coating and developing treatment system to which the present invention is applied.

FIG. 3 is a rear view showing the overall configuration of a semiconductor wafer coating and developing treatment system to which the present invention is applied.

FIG. 4 is a cross-sectional view showing the overall configuration of a development processing unit installed in the resist coating and development processing system of FIG.

5 is a plan view showing a development processing unit installed in the resist coating and development processing system of FIG.

FIG. 6 is a perspective view showing a developing solution supply nozzle used in the developing processing unit.

FIG. 7 is a view for explaining a state in which the developing solution is agitated by the developing solution supply nozzle.

FIG. 8 is a view showing a cleaning mechanism of a developing solution supply nozzle attached to a development processing unit.

FIG. 9 is a schematic diagram showing a stirring flow when stirring a developing solution with a developing solution supply nozzle.

FIG. 10 is a diagram showing the relationship between the height of the tip of the developer supply nozzle from the substrate, the line width variation, and the CD when the developer is stirred.

FIG. 11 is a diagram showing the relationship between the rotation speed of the substrate, the line width variation, and the CD when the developer is stirred.

FIG. 12 is a diagram showing a variation in line width between an example in which the developer is stirred and a comparative example in which the developer is not stirred.

FIG. 13 is a diagram showing another example of the developing solution supply nozzle.

[Explanation of symbols]

22 ... Main wafer transfer mechanism 52 ... Spin chuck 54 ... Drive motor 86 ... Developer supply nozzle 102 ... rinse nozzle 110 ... Control unit 111 ... Y-axis drive mechanism 112 ... Z-axis drive mechanism DEV ... Development processing unit L: Developer W: Semiconductor wafer (substrate)

─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP 62-199018 (JP, A) JP 9-213610 (JP, A) JP 11-329960 (JP, A) JP 10- 12511 (JP, A) JP 57-117237 (JP, A) JP 8-148406 (JP, A) JP 8-102436 (JP, A) JP 8-115969 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/027

Claims (16)

(57) [Claims] 1. A development processing method in which a development solution is applied to a substrate after exposure processing to perform the development processing, wherein the development solution is dropped from a nozzle to apply the development solution to the substrate, and then the tip of the nozzle is A development processing method, which comprises contacting a developing solution to cause relative movement between a substrate and a nozzle to stir the developing solution on the substrate. 2. The relative movement between the substrate and the nozzle is
Relative rotational movement caused by either staticizing the nozzle and rotating the substrate, staticizing the substrate and rotating the nozzle, or rotating the substrate and nozzle in opposite directions. Item 2. The development processing method according to Item 1. 3. Relative movement between the substrate and nozzle is
The development processing method according to claim 1, wherein the parallel movement is generated by scanning either the nozzle or the substrate. 4. The development processing method according to claim 1, wherein the tip of the nozzle is immersed in a developing solution. 5. The height of the nozzle tip from the substrate when the developer is stirred is 0.3 to 3 mm, and the height of the nozzle is 0.3 to 3 mm. Development processing method. 6. The height of the nozzle tip from the substrate is 0.
The development processing method according to claim 5, wherein the development processing length is 5 to 1.0 mm. 7. The development processing method according to claim 2, wherein the relative rotation speed between the substrate and the nozzle is 20 rpm or more and less than 40 rpm. 8. A development processing apparatus for applying a developing solution to a substrate after exposure processing for performing the developing process, comprising: a developing solution supply nozzle for supplying the developing solution to the substrate to apply the developing solution; A moving means for moving at least one of them, a developing solution is dropped from the nozzle to apply the developing solution to the substrate, and then the nozzle is brought into contact with the developing solution on the substrate, and is relatively disposed between the substrate and the nozzle. A development processing apparatus comprising: a control unit that controls the position of the nozzle and the moving unit so as to cause the movement. 9. The moving means has a rotating mechanism for rotating at least one of the substrate and the nozzle to cause relative rotational movement therebetween.
The development processing apparatus according to claim 8 . 10. The moving mechanism according to claim 8 , further comprising a scanning mechanism that scans at least one of the substrate and the nozzle to cause relative translation between them. Development processor. 11. The nozzle has a rod-shaped main body having a length equal to or larger than the diameter of the substrate, and a plurality of or slit-shaped developer discharge ports along the lower surface thereof. The development processing apparatus according to any one of claims 8 to 10 . 12. A developing apparatus according to any one of claims 8 to claim 11, characterized in that it further comprises a cleaning mechanism for cleaning the nozzle. 13. A development processing apparatus for applying a development solution to a substrate after exposure processing to perform the development processing, wherein a development solution supply nozzle for supplying the development solution to the substrate, and a tip portion of this nozzle is the substrate. A mechanism for bringing the tip end portion of the nozzle and the substrate close to each other so as to be in a position in contact with the upper developer and not in contact with the substrate, and after applying the developer to the substrate by dropping the developer from the nozzle, A development processing apparatus, comprising: a relative movement mechanism that causes relative movement between the substrate and the nozzle in a state where the tip portion of the nozzle is in contact with the developing solution on the substrate. 14. A developing processing apparatus for applying a developing solution to a substrate after an exposure process to perform the developing process, wherein a developing solution supply nozzle for supplying the developing solution to the substrate, and a tip portion of this nozzle is the substrate. A drive mechanism that adjusts the distance between the tip of the nozzle and the substrate so that the position is in contact with the upper developer but not the substrate, and the developer is dropped from the nozzle to apply the developer to the substrate. And a relative movement mechanism that causes relative movement between the substrate and the nozzle in a state where the tip of the nozzle is in contact with the developing solution on the substrate. 15. A development processing apparatus for applying a developing solution to a substrate after exposure processing for performing the developing process, the developing solution supplying nozzle for supplying the developing solution to the substrate and applying the developing solution, and the developing solution supplying nozzle. A drive mechanism that adjusts the distance between the tip of the nozzle and the substrate, the height of the tip of the developer supply nozzle when supplying the developing solution to the substrate, and the developing solution on the substrate after supplying the developing solution to the substrate. Between the substrate and the nozzle while the tip is immersed in
And a control means for controlling the height for stirring the developing solution on the substrate by causing relative movement in the developing processing apparatus. 16. The developing solution supply nozzle is in diameter the same or more in length of the substrate, any one of claims 15 claim 8, characterized in that it has a curve in the width direction 1 The development processing apparatus according to item.