JP3588585B2 - Resist liquid supply method and resist liquid supply device - Google Patents

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a resist liquid supply method and a resist liquid supply apparatus for forming a resist film by supplying a resist liquid onto a substrate such as a semiconductor wafer while rotating the substrate.
[0002]
[Prior art]
2. Description of the Related Art In a manufacturing process of a semiconductor device (IC chip) or an LCD, a fine pattern is formed with high precision and high density on a surface of a substrate such as a semiconductor wafer or a glass substrate by utilizing photolithography technology.
[0003]
For example, in the manufacture of semiconductor devices, after a resist film is formed on the surface of a semiconductor wafer, the resist film is exposed to a predetermined pattern, and further developed and etched to form a predetermined circuit pattern. .
[0004]
The formation of the above-described resist film is performed by, for example, a spin coating method. In this spin coating method, a wafer is placed on a spin chuck and rotated, and a resist solution is supplied from a nozzle for supplying the resist solution to substantially the center of the wafer, and the resist solution is uniformly spread over the entire surface of the wafer by centrifugal force. Things.
[0005]
[Problems to be solved by the invention]
By the way, it is preferable that the edge (edge) of the resist liquid while the resist liquid is being spread on the substrate by centrifugal force be as circular as possible from the viewpoint of reducing the consumption of the resist liquid. That is, as shown in FIG. 10, the edge of the above-mentioned resist liquid 101 has a shape of “jagged” in relation to the contact angle with the wafer W, that is, so-called striation is likely to occur. In this case, the “jagged” is formed from the outer periphery of the wafer. It is necessary to supply the resist solution until the liquid disappears to the outside, so that the consumption of the resist solution increases.
[0006]
Therefore, for example, a technique has been proposed in which striations are not generated as much as possible by supplying thinner to the wafer surface prior to the supply of the resist solution to improve the wettability. Therefore, there is a problem that the consumption of the resist solution cannot be reduced.
[0007]
The present invention has been made in view of such circumstances, and has as its object to provide a resist liquid supply method and a resist liquid supply device that can further reduce the consumption of the resist liquid.
[0008]
[Means for Solving the Problems]
In order to achieve this object, the method for supplying a resist solution according to the present invention comprises: (a) a step of supplying thinner onto the substrate; and (b) after the step (a) , rotating the substrate at a predetermined rotational acceleration. A first period for accelerating, a second period for rotating the substrate at a substantially constant speed after the first period, and a second period for reducing the rotation of the substrate at a predetermined rotation deceleration after the second period. Rotating the substrate so as to include a third period ; (c) a fourth period in which the supply of the resist solution onto the substrate is accelerated at a predetermined supply acceleration; and A fifth period during which the resist solution is supplied at a substantially constant supply speed; and a sixth period during which the supply of the resist solution onto the substrate is reduced at a predetermined supply deceleration after the fifth period. Starting during the first period, and further starting at the beginning of the second period and at the beginning of the fifth period. As almost coincide by delaying a predetermined time from the start of rotation of the substrate, a step of supplying the resist solution in the first supply amount onto the rotating substrate, after; (d) step (c), the substrate Supplying a resist liquid at a second supply amount smaller than the first supply amount.
[0009]
Further, the resist liquid supply apparatus of the present invention includes: a holding / rotating member that holds and rotates a substrate; a thinner supply unit that supplies thinner onto the substrate held by the holding / rotating member; A resist liquid supply unit for supplying a resist liquid onto the substrate held by the member; and a thinner supplied onto the substrate held by the holding / rotating member, and then rotating the substrate and delaying a predetermined time from the start of the rotation. Then, the resist liquid is supplied at a first supply amount onto the rotating substrate, and then the resist liquid is supplied onto the substrate at a second supply amount smaller than the first supply amount. A control unit for controlling each unit, the control unit comprising: a first period for accelerating the rotation of the substrate at a predetermined rotational acceleration; and a second period for rotating the substrate at a substantially constant speed after the first period. Period 2 and before Controlling the holding / rotating member so as to have a third period in which the rotation of the substrate is reduced at a predetermined rotation deceleration after the second period, and supplying the resist solution onto the substrate at a predetermined supply acceleration. A fourth period in which the resist solution is supplied onto the substrate at a substantially constant supply speed after the fourth period, and a substrate is supplied at a predetermined supply deceleration after the fifth period. Controlling the resist liquid supply unit so as to have a sixth period of decelerating the supply of the resist liquid onto the substrate, and starting the resist liquid at a first supply amount onto the substrate during the first period. And the control unit controls the holding / rotating member and the resist liquid supply unit so that the beginning of the second period and the beginning of the fifth period substantially coincide with each other. It is characterized by doing.
[0010]
According to the present invention, by starting the supply of the resist solution with a delay of a predetermined time from the start of the rotation of the substrate after the supply of the thinner, the resist solution is not mixed with the thinner, so that the edge (edge) of the resist solution can be formed. Reliably extend on the substrate wet with thinner. In addition, by supplying a large amount of resist first, a large swelling of the resist solution occurs at the edge of the resist solution, and the swollen resist solution surely spreads on the substrate wet by the thinner. No striations occur at the edges, so that the consumption of the resist solution can be reduced.
[0011]
Further features and advantages of the present invention will become more apparent by referring to the accompanying drawings and the description of the embodiments of the present invention.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0013]
1 to 3 are views showing the overall configuration of a semiconductor wafer coating / developing system 1 employing a resist liquid supply device according to an embodiment of the present invention. FIG. 1 is a plan view, FIG. Numerals 3 show the back respectively.
[0014]
In the coating and developing processing system 1, a plurality of wafers W as substrates to be processed are loaded into the system by a wafer cassette CR, for example, in units of 25 wafers, or unloaded from the system. Station 10 for loading and unloading wafers, and processing station 11 in which various single-wafer processing units for performing predetermined processing on wafers W one by one in the coating and developing process are arranged at predetermined positions in multiple stages. And an interface unit 12 for transferring a wafer W to and from an exposure apparatus (not shown) provided adjacent to the processing station 11.
[0015]
In the cassette station 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes are provided at the positions of the positioning projections 20 a on the cassette mounting table 20 with their respective wafer entrances facing the processing station 11 side. Wafers placed in a row in the X direction (vertical direction in FIG. 1) and movable in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction; vertical direction) of the wafers stored in the wafer cassette CR. The carrier 21 selectively accesses each wafer cassette CR.
[0016]
Further, the wafer transfer body 21 is configured to be rotatable in the θ direction, and as will be described later, an alignment unit (ALIM) and an extension unit belonging to the multi-stage unit section of the third processing unit group G3 on the processing station 11 side. (EXT) can also be accessed.
[0017]
As shown in FIG. 1, the processing station 11 is provided with a vertical transfer type main wafer transfer mechanism 22 provided with tweezers 48 for holding and transferring the wafer W, and all the processing units are arranged in a single set or around the main transfer mechanism 22. A plurality of sets are arranged in multiple stages. The main wafer transfer mechanism 22 is equipped with tweezers 48 capable of moving up and down in a vertical direction (Z direction). A cylindrical support 49 is connected to a rotating shaft of a motor (not shown). The driving force causes the tweezers 48 to rotate integrally with the tweezers 48 about the rotation axis, whereby the tweezers 48 can freely rotate in the θ direction. With such a configuration, transfer between the processing units is realized.
[0018]
Further, in this example, five processing unit groups G1, G2, G3, G4, G5 can be arranged, and the multi-stage units of the first and second processing unit groups G1, G2 are arranged in front of the system (FIG. 1). , The multi-stage unit of the third processing unit group G3 is disposed adjacent to the cassette station 10, the multi-stage unit of the fourth processing unit group G4 is disposed adjacent to the interface unit 12, The multi-stage units of the fifth processing unit group G5 can be arranged on the back side.
[0019]
As shown in FIG. 2, in the first processing unit group G1, two spinner-type processing units for performing a predetermined processing by placing a wafer W on a spin chuck in a cup CP, for example, supplying a resist solution according to the present invention The device (COT) and the developing unit (DEV) are stacked in two stages from the bottom. Also in the second processing unit group G2, two spinner type processing units, for example, a resist solution supply device (COT) and a developing unit (DEV) are stacked in two stages from the bottom. It is preferable to dispose the resist liquid supply device (COT) in such a lower stage because drainage of the resist liquid is troublesome both mechanically and in terms of maintenance. However, it is of course possible to appropriately arrange the upper stage as needed. Further, a chemical area 13 in which a resist liquid or the like as a processing liquid is provided below the resist liquid supply device (COT).
[0020]
As shown in FIG. 3, in the third processing unit group G3, an oven-type processing unit that places a wafer W on a mounting table and performs a predetermined process, for example, a cooling unit (COL) that performs a cooling process, and a fixing property of a resist. Unit (AD) for performing so-called water-phobic treatment, alignment unit (ALIM) for positioning, extension unit (EXT), pre-baking unit (PREBAKE) for performing heat treatment before exposure processing, and Post-baking units (POBAKE) for performing a heat treatment after the exposure treatment are stacked, for example, in eight stages from the bottom. Also in the fourth processing unit group G4, oven-type processing units, for example, a cooling unit (COL), an extension cooling unit (EXTCOL), an extension unit (EXT), a cooling unit (COL), a prebaking unit (PREBAKE) ) And a post-baking unit (POBAKE) are stacked in order from the bottom, for example, in eight stages.
[0021]
Thus, the cooling unit (COL) and the extension cooling unit (EXTCOL) having a low processing temperature are arranged in the lower stage, and the baking unit (PREBAKE), the post-baking unit (POBAKE) and the adhesion unit (AD) having a high processing temperature are arranged. By arranging the upper stage, thermal mutual interference between units can be reduced. Of course, a random multi-stage arrangement may be used.
[0022]
The interface section 12 has the same dimensions as the processing station 11 in the depth direction (X direction), but is set to a smaller size in the width direction. A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front of the interface section 12, while a peripheral exposure device 23 is arranged at the rear, and a center section is further arranged. Is provided with a wafer carrier 24. The wafer carrier 24 moves in the X and Z directions to access the cassettes CR and BR and the peripheral exposure device 23. The wafer transfer body 24 is configured to be rotatable also in the θ direction, and includes an extension unit (EXT) belonging to a multi-stage unit of the fourth processing unit group G4 on the processing station 11 side, and further, The wafer delivery table (not shown) on the adjacent exposure apparatus side can also be accessed.
[0023]
Further, in the coating and developing system 1, as described above, the multi-stage unit of the fifth processing unit group G5 shown by the broken line can be arranged on the back side of the main wafer transfer mechanism 22 as well. The multi-stage unit of the processing unit group G5 is configured to be able to shift to the side as viewed from the main wafer transfer mechanism 22 along the guide rail 25. Therefore, even when the multi-stage unit of the fifth processing unit group G5 is provided as shown in the drawing, a space is secured by sliding along the guide rail 25, so that the main wafer transfer mechanism 22 Maintenance work can be easily performed from behind. The multi-stage unit of the fifth processing unit group G5 is not limited to such a linear slide shift along the guide rail 25, but may be a system as shown by a one-dot chain line reciprocating rotation arrow in FIG. Even if it is configured to be rotated outward, it is easy to secure a space for maintenance work on the main wafer transfer mechanism 22.
[0024]
Next, a resist liquid supply device (COT) as a resist liquid supply device according to the present invention will be described with reference to FIGS. 4 and 5 are a schematic cross-sectional view and a schematic plan view illustrating the entire configuration of the resist liquid supply device (COT).
[0025]
Referring to FIG. 4, an annular cup CP is provided at the center of the bottom of the unit, and a spin chuck 52 is provided inside thereof. The spin chuck 52 is configured to rotate by the rotational driving force of the driving motor 54 in a state where the semiconductor wafer W is fixedly held by vacuum suction. The drive motor 54 is disposed so as to be able to move up and down in an opening 50 a provided in the unit bottom plate 50. Are combined.
[0026]
At the time of resist application, as shown in FIG. 4, the lower end 58a of the flange member 58 is in close contact with the unit bottom plate 50 near the outer periphery of the opening 50a, so that the inside of the unit is sealed. When the semiconductor wafer W is transferred between the spin chuck 52 and the tweezers 48 of the main wafer transfer mechanism 22, the lifting drive unit 60 lifts the drive motor 54 or the spin chuck 52 upward, so that the lower end of the flange member 58. Are floated from the unit bottom plate 50.
[0027]
In the cup CP, one chamber is formed by an outer peripheral wall surface, an inner peripheral wall surface, and a bottom surface, and one or a plurality of drain ports 56 are provided on the bottom surface. Connected to a tank (not shown). At the time of applying the resist, the resist liquid scattered from the wafer W in all directions is collected in the cup CP and sent as waste liquid from the drain port 56 at the bottom of the cup CP to the tank (not shown) through the drain pipe 70.
[0028]
A resist nozzle 36a for supplying a resist solution to the wafer surface of the wafer W is connected to a resist supply source 39a via a resist supply pipe 37a and a resist bellows pump 38a. In addition, a thinner nozzle 36b for supplying thinner to the surface of the wafer W to improve the wettability between the resist solution and the wafer substrate at the time of resist coating is connected to a thinner supply source 39b via a thinner supply pipe 37b and a thinner bellows pump 38b. Have been. The operation of the resist bellows pump 38a and the thinner bellows pump 38b is controlled by the control unit 15 to discharge the resist liquid and the thinner supplied onto the wafer W per unit time (hereinafter referred to as supply speed). .) Is controlled. The control unit 15 also controls the rotation speed of the drive motor 54, that is, the rotation speed of the wafer W.
[0029]
The resist bellows pump 38a and the thinner bellows pump 38b, the resist supply source 39a and the thinner supply source 39b are built in the chemical area 13 shown in FIG.
[0030]
The resist nozzle 36 a is detachably attached to the attachment member 100 at the tip of the nozzle scan arm 76 by a resist nozzle standby unit 90 (FIG. 5) provided outside the cup CP, and is set above the spin chuck 52. Is transferred to a predetermined resist solution discharge position. The thinner nozzle 36b is also detachably attached to the attachment member 100. The nozzle scan arm 76 is attached to the upper end of a vertical support member 75 that can move horizontally on a guide rail 74 laid in one direction (Y direction) on the unit bottom plate 50, and a Y-direction drive mechanism (not shown) As a result, it moves integrally with the vertical support member 75 in the Y direction. The nozzle scan arm 76 can also be moved in the X direction perpendicular to the Y direction in order to selectively attach the resist nozzle 36a in the resist nozzle standby unit 90, and is also moved in the X direction by an X direction driving mechanism (not shown). It is supposed to.
[0031]
The control unit 15 also controls the elevating operation by the elevating driving unit 60, the movement of the nozzle scan arm 76, and the like.
[0032]
Next, a series of processing steps in the coating and developing processing system 1 and a resist liquid supply device (COT) according to the present invention will be described.
[0033]
First, in the cassette station 10, the wafer carrier 21 accesses the cassette CR containing unprocessed wafers on the cassette mounting table 20, takes out one semiconductor wafer W from the cassette CR, and sets the alignment unit (ALIM ). After the alignment of the wafer W is performed by the alignment unit (ALIM), the wafer W is transferred to the adhesion unit (AD) by the main wafer transfer mechanism 22 to perform the hydrophobic treatment, and then the cooling unit (COL). After a predetermined cooling process (first cooling) is performed, the wafer is transported to a resist liquid supply device (COT).
[0034]
In this resist liquid supply device (COT), referring to FIG. 4, when wafer W held by tweezers 48 is transported to a position immediately above cup CP, spin chuck 52 rises and vacuum-adsorbs wafer W. After that, the wafer W descends and fits in a predetermined position (the state shown in FIG. 4) in the cup CP. At this time, the nozzle scan arm 76 is waiting outside the cup CP so as not to hinder the transfer of the wafer W. Subsequently, the scanning mechanism of the nozzle scan arm 76 moves so that the thinner nozzle 36b is positioned at the center on the wafer W.
[0035]
Here, FIG. 6 shows the relationship between the rotation speed (reference numeral 32) of the wafer W, the supply speed of the resist (ml / sec) (reference numeral 31), and the time (sec) T. Hereinafter, the method of supplying the resist solution will be described with reference to FIG.
[0036]
Referring to FIG. 7A, first, for example, 0.2 to 1.0 (ml) of the thinner B is supplied to the center of the wafer W while the wafer W is stationary (reference numeral 30 shown in FIG. 6). By the movement of the nozzle scan arm 76, the resist nozzle 36a moves to a position above the center of the wafer W within about 0.1 second after the completion of the thinner discharge, and starts rotating the wafer W (see FIG. 7B). Shown). The rotation start time of the wafer W is set to T = 0, and the rotation acceleration is set to, for example, 20,000 (rpm / s). Then, after a lapse of a predetermined time from T = 0 and during rotation acceleration, for example, after a lapse of 0.1 to 0.2 seconds from T = 0, the application of the resist liquid R to the center of the wafer W is started at a predetermined supply acceleration. (TR1 in FIG. 6 and (c) in FIG. 7). Then, the wafer rotation speed becomes constant, for example, 4000 (rpm) (T1), and the discharge is started at a relatively high constant supply speed 1.0 (ml / s) as the first supply speed (TR4). For example, after 0.1 second, the vehicle decelerates at a predetermined deceleration, and when the second supply speed becomes a relatively low constant supply speed 0.4 (ml / s), the deceleration ends (TR2). After the end of the deceleration, discharge is performed at the second supply speed (FIG. 7D). For example, deceleration is started after 0.6 to 0.7 seconds (TR5), and at the same time, rotation is performed at a constant speed. The deceleration of the rotation speed of the wafer W is started (about one second after T = 0 (T2)), and the resist supply and the wafer rotation speed are reduced to 0 (TR3 and T3).
[0037]
By starting the supply of the resist solution with a delay of a predetermined time from the start of the rotation of the wafer W after the supply of the thinner in this manner, the resist solution does not mix with the thinner, and the edge (edge) of the resist solution is reliably formed. Extends on the substrate wet by thinner. Then, in this state, the supply amount of the resist solution is relatively increased in a short time as the first step, and the supply amount is reduced in a longer time than the first step as the second step, thereby supplying the resist solution as shown in FIG. As described above, since the amount of the extension edge Ra of the resist liquid R is larger than that of other parts, swelling occurs, and the swelled resist liquid surely extends on the substrate wet by the thinner in a state close to a perfect circle. Thus, the consumption of the resist solution can be reduced.
[0038]
In addition, the start TR4 of the first supply speed and the start T1 of the constant wafer rotation speed are set at the same time, and the end TR5 of the second supply speed and the end T2 of the fixed wafer rotation speed are set at the same time. The sequence of controlling the rotation speed and controlling the supply speed is facilitated.
[0039]
When the supply of the resist solution is completed, a predetermined heating process is performed in a prebaking unit (PREBAKE), and a cooling process is performed in a cooling unit (COL). Thereafter, exposure (not shown) is performed by the wafer carrier 24 via the interface unit 12. Exposure processing is performed by the apparatus. After the exposure process is completed, a predetermined heat treatment may be performed in a post-exposure baking unit in order to suppress deformation of the resist pattern due to the standing wave effect.
[0040]
Thereafter, a cooling process is performed in a cooling unit (COL), the wafer W is transferred to a developing unit (DEV), a predetermined developing process is performed, and a predetermined heating process is performed in a post-baking unit (POBAKE). This heat treatment is performed, for example, at 100 ° C. or higher. After the cooling process is performed in the cooling unit (COL), the cooling unit (COL) is returned to the cassette station 10.
[0041]
FIG. 9 shows a method for supplying a resist solution according to another embodiment. Except for the supply method, the configuration and operation of the device and the like are the same as those in the above-described embodiment, and thus description thereof will be omitted.
[0042]
In the present embodiment, similarly to the above-described embodiment, first, for example, 0.2 to 1.0 (ml) of the thinner B is supplied to the center of the wafer W while the wafer W is stationary. (Reference numeral 30). By the movement of the nozzle scan arm 76, the resist nozzle 36a moves to a position above the center of the wafer W within about 0.1 second after the completion of the thinner discharge, and starts rotating the wafer W. The rotation start time of the wafer W is set to T = 0, and the rotation acceleration is set to, for example, 20,000 (rpm / s). Then, after a lapse of a predetermined time from T = 0 and during rotation acceleration, for example, after a lapse of 0.1 to 0.2 seconds from T = 0, the application of the resist liquid R to the center of the wafer W is started at a predetermined supply acceleration. (TR1). Then, the wafer rotation speed becomes constant, for example, 4000 (rpm) (T1), and the liquid is discharged at a relatively high constant supply speed 1.0 (ml / s) as the first supply speed for about 0.1 second, and thereafter, The supply speed is reduced at a predetermined deceleration, and when the supply speed becomes a relatively low constant supply speed 0.4 (ml / s) as the second supply speed, the deceleration ends (TR2 '). After the end of the deceleration, discharge is performed at the second supply speed, for example, for about 0.5 seconds, which is shorter than in the above-described embodiment, and then the deceleration is started (TR5 ') and the resist supply is ended (TR3') ). Then, thereafter, the rotation speed of the wafer W that has been rotating at a constant speed is started to be reduced (after about one second from T = 0 (T2)), and the rotation is stopped (T3).
[0043]
According to the supply method of the present embodiment, as in the above-described embodiment, no striation occurs, the supply of the resist solution is completed before T2 at which the wafer rotation is reduced, and the rotation is centrifuged thereafter. The extension by the force can further reduce the consumption of the resist solution.
[0044]
Note that the present invention is not limited to the embodiment described above.
[0045]
In each of the above embodiments, the resist supply apparatus for supplying a semiconductor wafer substrate and its method have been described. However, the present invention is also applicable to a resist supply apparatus for supplying a glass substrate used for a liquid crystal display or the like. .
[0046]
【The invention's effect】
As described above, according to the present invention, by supplying a large amount of the resist solution first, a large swelling of the resist solution occurs at the edge of the resist solution, and the swollen resist solution is surely wet by the thinner. Since the resist solution is extended on the substrate, a “jagged” shape at the edge of the resist solution, that is, so-called striation does not occur, so that the consumption of the resist solution can be reduced. ,
[Brief description of the drawings]
FIG. 1 is a plan view showing an overall configuration of a coating and developing system to which a resist liquid supply apparatus and a resist liquid supply method of the present invention are applied.
FIG. 2 is a front view of the coating and developing system shown in FIG.
FIG. 3 is a rear view of the coating and developing system shown in FIG. 1;
FIG. 4 is a sectional view of a resist liquid supply device according to the present invention.
5 is a plan view of the resist liquid supply device shown in FIG.
FIG. 6 is a diagram illustrating a relationship between a substrate rotation speed, a resist supply speed, and time according to an embodiment of the present invention.
FIG. 7 is a schematic view showing the action of supplying a resist solution and a thinner to a substrate.
FIG. 8 is a schematic cross-sectional view showing an edge portion of the resist liquid when the resist liquid extends to the substrate.
FIG. 9 is a diagram illustrating a relationship between a substrate rotation speed, a resist supply speed, and time according to another embodiment of the present invention.
FIG. 10 is a plan view showing a conventional state in which a resist solution extends to a substrate.
[Explanation of symbols]
W: Wafer B: Thinner R: Resist liquid Ra: Extension edge 15: Control unit 36a. . . Resist nozzle 36b thinner nozzle 38a bellows pump for resist 38b thinner bellows pump 39a. . . Resist supply source 39b ... thinner supply source 52. . . Spin chuck 54. . . Drive motors 83a. . . Resist supply pipe 83b... Thinner supply pipe 92. . . Nozzle scan arm

Claims (4)

(A) supplying thinner on the substrate;
(B) after the step (a), a first period during which the rotation of the substrate is accelerated at a predetermined rotational acceleration, and a second period during which the substrate is rotated at a substantially constant speed after the first period. Rotating the substrate to include a third period in which the rotation of the substrate is reduced at a predetermined rotation deceleration after the second period ;
(C) a fourth period during which the supply of the resist solution onto the substrate is accelerated at a predetermined supply acceleration, and a fifth period during which the resist solution is supplied onto the substrate at a substantially constant supply speed after the fourth period. And a sixth period in which the supply of the resist solution onto the substrate is reduced at a predetermined supply deceleration after the fifth period, the sixth period being started during the first period, and Supplying a resist solution at a first supply amount onto the rotating substrate with a delay of a predetermined time from the start of the rotation of the substrate so that the beginning of the fifth period substantially coincides with the beginning of the fifth period ;
(D) after the step (c), supplying the resist liquid onto the substrate at a second supply amount smaller than the first supply amount. The method for supplying a resist solution according to claim 1 ,
The method of supplying a resist liquid, wherein the first supply amount is approximately twice to approximately three times the second supply amount. A holding / rotating member that holds and rotates the substrate,
A thinner supply unit that supplies thinner onto the substrate held by the holding / rotating member,
A resist liquid supply unit that supplies a resist liquid onto the substrate held by the holding / rotating member,
After the thinner is supplied onto the substrate held by the holding / rotating member, the substrate is rotated, and the resist liquid is supplied at a first supply amount onto the rotating substrate with a predetermined delay from the start of the rotation. And a control unit for controlling each of the above units so that the resist liquid is supplied on the substrate at a second supply amount smaller than the first supply amount ,
The control unit includes: a first period in which the rotation of the substrate is accelerated at a predetermined rotational acceleration; a second period in which the substrate is rotated at a substantially constant speed after the first period; Controlling the holding / rotating member so as to have a third period in which the rotation of the substrate is decelerated at a predetermined rotation deceleration, and accelerating the supply of the resist liquid onto the substrate at a predetermined supply acceleration. And a fifth period during which the resist liquid is supplied onto the substrate at a substantially constant supply rate after the fourth period, and a resist liquid onto the substrate at a predetermined supply deceleration after the fifth period. Controlling the resist liquid supply unit to have a sixth period of decelerating the supply of,
Further, the resist liquid supply unit is controlled such that the resist liquid is supplied to the substrate at the first supply amount during the first period, and the start of the second period and the fifth liquid supply are started. A resist liquid supply device , wherein the holding / rotating member and the resist liquid supply unit are controlled so that a start of a period substantially coincides with the start of the period . The resist liquid supply device according to claim 3 ,
The resist liquid supply apparatus, wherein the control unit controls the resist liquid supply unit such that the first supply amount is approximately twice to approximately three times the second supply amount.

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