CN112650032A - Method for improving photoetching development T-shaped defects - Google Patents
Method for improving photoetching development T-shaped defects Download PDFInfo
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- CN112650032A CN112650032A CN202011563302.1A CN202011563302A CN112650032A CN 112650032 A CN112650032 A CN 112650032A CN 202011563302 A CN202011563302 A CN 202011563302A CN 112650032 A CN112650032 A CN 112650032A
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000007547 defect Effects 0.000 title claims abstract description 29
- 238000001259 photo etching Methods 0.000 title claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000007921 spray Substances 0.000 claims abstract description 19
- 239000008367 deionised water Substances 0.000 claims abstract description 18
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 18
- 238000005507 spraying Methods 0.000 claims abstract description 18
- 238000011010 flushing procedure Methods 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 239000000376 reactant Substances 0.000 claims abstract description 5
- 238000005406 washing Methods 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 18
- 238000001459 lithography Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 230000001133 acceleration Effects 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 55
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
Abstract
The invention provides a method for improving photoetching development T-shaped defects, wherein a linear scanning spray head carries out developing solution pre-spraying outside the edge of an exposed wafer; spraying a developing solution from the edge of one side of the wafer by using a linear scanning nozzle, and performing linear scanning on the wafer in a direction vertical to the length direction of a nozzle to cover the developing solution on the surface of the wafer to form a uniform developing water film; enabling the linear scanning nozzle to perform bubble discharge and back suction outside the other side edge of the wafer; shaking the linear scanning nozzle outside the other side edge of the wafer for several times to remove micro liquid drops on the linear scanning nozzle; moving the linear scanning jet back to the initial position; standing to wait for the completion of the chemical reaction between the developing water film on the wafer and the exposed photoresist; washing the linear scanning nozzle by using deionized water; and spraying deionized water at the center of the wafer, enabling the wafer to rotate at a high speed, and flushing the developing reactant out of the wafer under the drive of the high-speed flushing of water flow and the rotating centrifugal force to obtain a required photoetching pattern.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for improving photoetching development T-shaped defects.
Background
Photolithography, the most important process in the fabrication of integrated circuits, uses the principle of photochemical reaction to transfer a pattern previously prepared on a reticle onto a wafer. The photolithography process mainly includes three processes (gumming, exposure, and development). The development is the last step of completing the photoetching pattern, and the quality of the development is directly related to the quality of the photoetching process. The main indicators for measuring the development quality are line width uniformity and defects. T-type defects are a typical development process defect.
A Track machine (Track) generally used in the prior art mainly includes three developing process chambers (DEV CUP), three single-tube deionized water showers and one linear scanning showerhead (LD nozzle) carried on a shared robot Arm (Share Arm). To improve the production capacity, the development method of the shared arm mode is commonly adopted in the industry. In the actual production process, the developing spray head enters the wafer to operate sequentially according to the developing cavity, and developing liquid drops are gathered to form stealing drops due to liquid tension or poor suck-back and the like on the developing spray head in the operation process. When the shared mechanical arm moves among the developing cavities, liquid drops drop on wafers of other developing cavities in different developing process steps, and when the shared mechanical arm rotates to spin, the liquid which is stolen to drop forms T-shaped defects due to rotating centrifugal force, so that the formation of photoetching patterns is damaged, and the yield of products is reduced.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method for improving a lithographic development T-shaped defect, which is used to solve the problems in the prior art that a T-shaped defect is formed in the liquid that is leaked due to the liquid tension or poor suck-back on the developing nozzle during the developing operation, the formation of a lithographic pattern is damaged, and the product yield is reduced.
To achieve the above and other related objects, the present invention provides a method for improving lithography development T-type defects, the method comprising at least the steps of:
providing a linear scanning nozzle, wherein the linear scanning nozzle carries out developing solution pre-spraying outside the edge of the exposed wafer;
secondly, spraying a developing solution from the edge of one side of the wafer by the linear scanning nozzle, performing linear scanning perpendicular to the length direction of the nozzle on the wafer, and covering the developing solution on the surface of the wafer to form a uniform developing water film;
step three, enabling the linear scanning nozzle to perform bubble discharge and back suction outside the other side edge of the wafer;
step four, shaking the linear scanning nozzle outside the other side edge of the wafer for a plurality of times to remove micro liquid drops on the linear scanning nozzle;
fifthly, moving the linear scanning nozzle back to the initial position;
standing to wait for the completion of the chemical reaction of the developing water film on the wafer and the exposed photoresist;
step seven, washing the linear scanning nozzle by using deionized water;
and step eight, spraying deionized water at the center of the wafer, enabling the wafer to rotate at a high speed, and flushing the developing reactant out of the wafer under the drive of the high-speed flushing of water flow and the rotating centrifugal force to obtain the required photoetching pattern.
Preferably, the linear scanning nozzle in the first step is mounted on a shared mechanical arm, and the shared mechanical arm is mounted on a developing unit structure in a rail machine.
Preferably, the developing unit structure in the rail machine in the first step further includes: three developing operation cavities and three single-tube deionized water spray heads.
Preferably, the developing solution in the second step is a 2.38% aqueous solution of TMAH.
Preferably, the material of the sexual scanning spray head in the step one is a hydrophilic material.
Preferably, in the fourth step, the linear scanning nozzle is dithered for several times outside the other side edge of the wafer in a manner of dithering for several times horizontally and continuously left and right.
Preferably, in the fourth step, the linear scanning nozzle is shaken for several times outside the other edge of the wafer for three times in a left-right direction.
Preferably, in the fourth step, the amplitude of each left-right shaking of the linear scanning nozzle in the horizontal direction is 4 mm.
Preferably, in the fourth step, the horizontal acceleration of each time the linear scanning spray head shakes left and right in the horizontal direction is 732 mm-sec2。
Preferably, the time for each left-right shaking of the linear scanning nozzle in the horizontal direction in the fourth step is 0.5 sec.
As described above, the method for improving the lithography development T-type defect of the present invention has the following beneficial effects: the shaking mode of the developing nozzle after the developing solution is sprayed not only avoids the potential risk of adjusting process parameters, but also reduces the generation probability of T-shaped defects, and obtains good effects for improving the product yield and reducing the rework cost.
Drawings
FIG. 1 is a schematic structural view of a linear scanning nozzle of the present invention for pre-spraying a developing solution outside the edge of a wafer;
FIG. 2 is a schematic structural diagram of the linear scanning showerhead of the present invention performing linear scanning perpendicular to the nozzle length direction on a wafer;
FIG. 3 is a schematic view of the linear scanning showerhead of the present invention performing bubble discharge and suck-back outside the other side edge of the wafer;
FIG. 4 is a schematic view of a linear scanning showerhead dithering a plurality of times outside the other side edge of the wafer according to the present invention;
FIG. 5 is a schematic view of the linear scanning nozzle of the present invention moving back to the initial position;
FIG. 6 is a schematic structural diagram of a wafer standing still for completion of a chemical reaction between a developing water film and an exposed photoresist;
FIG. 7 is a schematic view of a wafer center sprayed with DI water and rotated at a high speed according to the present invention;
FIG. 8 is a schematic view of a developing unit according to the present invention;
FIG. 9 is a flow chart of a method for improving lithographically developed T-defects of the present invention.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 9. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The invention provides a method for improving lithography development T-shaped defects, as shown in FIG. 9, FIG. 9 is a flow chart of the method for improving lithography development T-shaped defects of the invention, the method at least comprises the following steps:
providing a linear scanning nozzle, wherein the linear scanning nozzle carries out developing solution pre-spraying outside the edge of the exposed wafer; as shown in fig. 1, fig. 1 is a schematic structural view of the linear scanning nozzle of the present invention performing developer solution pre-spraying outside the edge of a wafer. In the first step, the linear scanning nozzle 02 carries out developer solution pre-spraying outside the edge of the exposed wafer 01, and the exposed wafer 01 refers to the wafer which is subjected to spin coating of photoresist and exposure. As can be seen from fig. 1, the linear scanning nozzle 02 performs the pre-spraying of the developing solution outside the edge of the wafer in preparation for the subsequent formal spraying.
Further, the linear scan head in the first step of this embodiment is mounted on a shared robot arm, and the shared robot arm is mounted on a developing unit structure in the rail machine. As shown in fig. 8, fig. 8 is a schematic structural view of the developing unit of the present invention. Still further, the structure of the developing unit in the rail machine in the first step of this embodiment further includes: three developing operation cavities and three single-tube deionized water spray heads. As can be seen from fig. 8, in the first step of this embodiment, the linear scanning nozzle (LD nozzle)02 is mounted on a shared robot Arm (Share Arm)05, the shared robot Arm 05 is mounted on a developing unit structure in a Track machine (Track), and the developing unit structure in the Track machine further includes: three developing process chambers (DEV CUP)04 and three single-tube deionized water spray heads (rinte Nozzle) 03.
Still further, in the present invention, the material of the scanning nozzle in the first step of this embodiment is a hydrophilic material, so that developer micro-droplets that may be formed near the sidewall of the scanning nozzle during the developing process gradually form larger droplets after being gathered, and the droplets drop when the developing nozzle moves across the cavity. Further, the developing solution in step two of this embodiment is a 2.38% aqueous solution of TMAH.
Secondly, spraying a developing solution from the edge of one side of the wafer by the linear scanning nozzle, performing linear scanning perpendicular to the length direction of the nozzle on the wafer, and covering the developing solution on the surface of the wafer to form a uniform developing water film; as shown in fig. 2, fig. 2 is a schematic structural view illustrating the linear scanning perpendicular to the nozzle length direction performed by the linear scanning showerhead of the present invention on a wafer. In the second step of this embodiment, the shared robot 05 is operated to make the linear scanning nozzle 02 spray the developer from one side edge of the wafer 01 and perform linear scanning perpendicular to the length direction of the nozzle (the direction indicated by the arrow in fig. 2) on the wafer 01, so as to cover the developer on the surface of the wafer 01 to form a uniform developer film.
Step three, enabling the linear scanning nozzle to perform bubble discharge and back suction outside the other side edge of the wafer; as shown in fig. 3, fig. 3 is a schematic structural view of the linear scanning nozzle of the present invention performing bubble discharging and sucking back outside the other side edge of the wafer. In the third step, after the linear scanning is performed by the linear scanning head 02, bubble discharge and suck-back are performed outside the edge of the other side of the wafer 01 (the other side of the wafer relative to the initial position of the linear scanning head in the first step).
Step four, shaking the linear scanning nozzle outside the other side edge of the wafer for a plurality of times to remove micro liquid drops on the linear scanning nozzle; as shown in fig. 4, fig. 4 is a schematic structural diagram of the linear scanning nozzle of the present invention performing a plurality of times of shaking outside the other side edge of the wafer. After the linear scanning nozzle 02 in the fourth step discharges and sucks the bubbles outside the edge of the wafer, the linear scanning nozzle is further positioned on the other side of the wafer (the other side of the wafer corresponding to the initial position of the linear scanning nozzle in the first step) and shaken for several times (the directions of the left and right arrows of the linear scanning nozzle in fig. 4 are the directions of left and right horizontal back and forth movement of the linear scanning nozzle), so as to remove the micro droplets on the linear scanning nozzle 02.
Further, in the fourth step of the present invention, the linear scanning nozzle is continuously shaken for several times horizontally from left to right by shaking the linear scanning nozzle for several times outside the other edge of the wafer.
Still further, in the fourth step of the present invention, the way of shaking the linear scanning nozzle outside the other edge of the wafer for several times is to shake the linear scanning nozzle three times continuously left and right in the horizontal direction.
Furthermore, in the fourth step of this embodiment, the amplitude of each left-right shake of the linear scanning nozzle in the horizontal direction is 4 mm. Still further, in the fourth step of the present invention, the horizontal acceleration of each time the linear scanning nozzle shakes left and right in the horizontal direction is 732mm/sec2。
Still further, in the fourth step of the present invention, the time for each horizontal shaking of the linear scanning nozzle in the horizontal direction is 0.5 sec. And step five, moving the linear scanning nozzle back to the initial position. That is, in the developing process conditions, the developing reaction time affects the line width (CD) and the profile of the photo-etched pattern; development flow, spray time, spray location and rotation speed affect line width uniformity (CDU). In order to reduce defect formation and not change development reaction time and developed line width uniformity, because the single-tube deionized water spray head and the linear scanning spray head are relatively independent, after the development solution is sprayed, the linear scanning spray head continuously shakes for three times at the left and right 4mm in the horizontal direction, and the horizontal acceleration is 732mm/sec2Each movement time was 0.5sec (sec). The mode can effectively improve the formation of photoetching and developing T-shaped defects, and the T-shaped defects are reduced by 86% after optimizationAnd (5) a defect.
Fifthly, moving the linear scanning nozzle back to the initial position; as shown in fig. 5, fig. 5 is a schematic structural view illustrating the linear scanning nozzle of the present invention moving back to the initial position. The initial position where the linear scanning shower head 02 moves back to the initial position in the fifth step is referred to as the one side of the wafer in the second step.
Standing to wait for the completion of the chemical reaction of the developing water film on the wafer and the exposed photoresist; as shown in fig. 6, fig. 6 is a schematic structural view illustrating a stationary wafer waiting for the completion of the chemical reaction between the developing water film and the exposed photoresist.
Step seven, washing the linear scanning nozzle by using deionized water; the cleaning Bath (Bath) with the linear scanning head in the initial position of this embodiment performs head cleaning (Nozzle Wash) with deionized water.
And step eight, spraying deionized water at the center of the wafer, enabling the wafer to rotate at a high speed, and flushing the developing reactant out of the wafer under the drive of the high-speed flushing of water flow and the rotating centrifugal force to obtain the required photoetching pattern. As shown in fig. 7, fig. 7 is a schematic structural view illustrating spraying deionized water at the center of a wafer and rotating the wafer at a high speed according to the present invention. Moving the single-tube deionized water spray head (Rice Nozzle) to the center of the wafer to spray deionized water and rotating the wafer at high speed, and flushing the developing reactant out of the wafer under the drive of high-speed flushing of water flow and rotating centrifugal force to obtain the final required photoetching pattern.
In conclusion, the invention avoids the potential risk of adjusting process parameters, reduces the generation probability of T-shaped defects, and obtains good effects for improving the product yield, reducing the rework cost and the like through the development nozzle shaking mode after the developer is sprayed. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A method for improving lithography development T-shaped defects is characterized by at least comprising the following steps:
providing a linear scanning nozzle, wherein the linear scanning nozzle carries out developing solution pre-spraying outside the edge of the exposed wafer;
secondly, spraying a developing solution from the edge of one side of the wafer by the linear scanning nozzle, performing linear scanning perpendicular to the length direction of the nozzle on the wafer, and covering the developing solution on the surface of the wafer to form a uniform developing water film;
step three, enabling the linear scanning nozzle to perform bubble discharge and back suction outside the other side edge of the wafer;
step four, shaking the linear scanning nozzle outside the other side edge of the wafer for a plurality of times to remove micro liquid drops on the linear scanning nozzle;
fifthly, moving the linear scanning nozzle back to the initial position;
standing to wait for the completion of the chemical reaction of the developing water film on the wafer and the exposed photoresist;
step seven, washing the linear scanning nozzle by using deionized water;
and step eight, spraying deionized water at the center of the wafer, enabling the wafer to rotate at a high speed, and flushing the developing reactant out of the wafer under the drive of the high-speed flushing of water flow and the rotating centrifugal force to obtain the required photoetching pattern.
2. The method for improving lithography development T-shaped defects according to claim 1, wherein: the linear scanning nozzle in the first step is arranged on a shared mechanical arm, and the shared mechanical arm is arranged on a developing unit structure in the rail machine.
3. The method for improving lithography development T-shaped defects according to claim 2, wherein: the developing unit structure in the rail machine in the first step further comprises: three developing operation cavities and three single-tube deionized water spray heads.
4. The method for improving lithography development T-shaped defects according to claim 1, wherein: and the developing solution in the second step is 2.38% TMAH aqueous solution.
5. The method for improving lithography development T-shaped defects according to claim 1, wherein: the material of the scanning spray head in the first step is a hydrophilic material.
6. The method for improving lithography development T-shaped defects according to claim 1, wherein: in the fourth step, the linear scanning nozzle is vibrated for several times outside the other side edge of the wafer continuously from left to right horizontally.
7. The method for improving lithography development T-shaped defects according to claim 6, wherein: in the fourth step, the linear scanning nozzle is shaken for a plurality of times outside the other side edge of the wafer continuously for three times in the horizontal direction.
8. The method for improving lithographically developed T-defects of claim 7, wherein: in the fourth step, the amplitude of each left-right shaking of the linear scanning nozzle in the horizontal direction is 4 mm.
9. The method for improving lithographically developed T-defects of claim 8, wherein: in the fourth step, the horizontal acceleration of each time of left-right shaking of the linear scanning spray head in the horizontal direction is 732mm/sec2。
10. The method for improving lithography development T-shaped defects according to claim 1, wherein: in the fourth step, the time for shaking the linear scanning nozzle in the horizontal direction is 0.5 sec.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011563302.1A CN112650032A (en) | 2020-12-25 | 2020-12-25 | Method for improving photoetching development T-shaped defects |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011563302.1A CN112650032A (en) | 2020-12-25 | 2020-12-25 | Method for improving photoetching development T-shaped defects |
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| CN112650032A true CN112650032A (en) | 2021-04-13 |
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| CN202011563302.1A Pending CN112650032A (en) | 2020-12-25 | 2020-12-25 | Method for improving photoetching development T-shaped defects |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113376967A (en) * | 2021-06-23 | 2021-09-10 | 无锡职业技术学院 | Development process of photoetching metal stripping process |
| CN115701858A (en) * | 2023-01-10 | 2023-02-14 | 广州粤芯半导体技术有限公司 | Method for improving developing uniformity of linear scanning nozzle |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113376967A (en) * | 2021-06-23 | 2021-09-10 | 无锡职业技术学院 | Development process of photoetching metal stripping process |
| CN115701858A (en) * | 2023-01-10 | 2023-02-14 | 广州粤芯半导体技术有限公司 | Method for improving developing uniformity of linear scanning nozzle |
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