JP3465146B2 - Developing device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spray-type developing device for depositing a developing solution on a substrate to be processed using a spinner mechanism and a nozzle.

[0002]

2. Description of the Related Art In a photolithography process for manufacturing a semiconductor device, a photoresist is applied to the surface of a semiconductor wafer (resist applying process), a mask pattern is printed on the resist (exposure process), and then a photosensitive portion of the resist or The photosensitive portion is selectively dissolved in a developing solution (developing step) to form a resist pattern on the wafer surface. Conventionally, in this type of developing process, a spray-type developing device has been used in which a developing solution is sprayed and supplied from a nozzle onto a wafer surface while a semiconductor wafer is rotated by a spinner mechanism, and the wafer is piled up by surface tension. .

Generally, in a spray type developing device, the nozzle is kept waiting in a predetermined nozzle standby portion while the developing solution is not piled up, and when not used for a long time, the developing solution at the tip of the nozzle may deteriorate. For this reason, a predetermined amount of the developing solution is discharged and discarded there (at the nozzle standby portion) or at a specially provided dummy dispensing portion. It is also possible to configure the discharge port of the nozzle with a large number of fine holes so that the developer from the nozzle hits the semiconductor wafer when it impacts the semiconductor wafer, and to discharge the developer so that it leaks out from these fine holes. Has been done.

[0004]

In the conventional spray type developing apparatus, the developing solution from the nozzle is applied to the surface of the semiconductor wafer whether or not the nozzle has a large number of pores as described above. It hits almost vertically. However, since the semiconductor wafer is rotating, the developer vertically hits the semiconductor wafer, so that the semiconductor wafer receives a considerable impact. If the impact of the developing solution is strong, the surface of the wafer may be damaged or bubbles may be generated in the developing solution to cause uneven development.

Further, in the conventional apparatus, after performing the dummy dispensing in advance in the nozzle standby portion or the dummy dispensing portion as described above, the nozzle is moved to above the semiconductor wafer and the developing solution is discharged at a predetermined developing solution discharge position. Was being discharged. However, immediately after the start of ejection, the developing solution is vigorously ejected from the nozzle, so that there is a problem in that the wafer is hit with a strong impact on the wafer surface.

The present invention has been made in view of the above problems, and it is an object of the present invention to provide a developing device capable of protecting a substrate to be processed and improving the quality of the developing process.

[0007]

In order to achieve the above-mentioned object, the developing apparatus of the present invention comprises a substrate to be processed placed on a spin chuck and rotated, and a developing solution is supplied to the substrate to be processed through a nozzle. In the developing device adapted to supply to the surface of the substrate, the nozzle has a plurality of ejection openings linearly arranged in the horizontal direction, and the nozzle is moved substantially horizontally in the horizontal direction above the substrate to be processed. The arrangement direction of the discharge ports is inclined by a predetermined angle with respect to the axis orthogonal to the moving direction of the nozzles in the horizontal plane.

In the developing device of the present invention, the nozzle for supplying the developing solution to the surface of the rotating substrate to be processed has a plurality of ejection openings linearly arranged in the horizontal direction. When this nozzle moves (scans) substantially horizontally in the horizontal direction above the substrate while discharging the developing solution from each discharge port, the arrangement direction of the nozzle discharge ports with respect to the axis orthogonal to the nozzle movement direction in the horizontal plane. The scan is performed in a state in which is inclined by a predetermined angle.

In the developing apparatus of the present invention, it is preferable to guarantee the supply of the developing solution from each nozzle ejection port in a soft-impact developing solution of the follow-up type in a direction that hardly opposes the rotation of the substrate to be processed in the entire scan area. May supply the developing solution from the nozzle to the substrate to be processed within a region of 90 ° around the rotation center of the substrate to be processed. Further, it is preferable that each ejection port is inclined downward at a predetermined angle (for example, 45 °), and the angle at which the nozzle ejection port is obliquely inclined with respect to the axis orthogonal to the nozzle movement direction is 10.
It is preferable to set the angle within the range of 24 ° to 24 °.

In order to prevent the substrate to be processed from being damaged by the impact of the developing solution when the nozzle starts discharging the developing solution, it is preferable to move the nozzle upward from the side of the substrate to be processed. During the movement, the discharge of the developing solution from the nozzle may be started at a position where it does not touch the substrate to be processed. In this case, a cup for trapping the developing solution scattered from the substrate to be processed may be provided around the spin chuck so that the developing solution ejected from the nozzle at the start of ejection of the developing solution is directly received by the cup. Further, after the discharge of the developing solution is started, the nozzle may be moved to a predetermined position above the substrate to be processed while continuing the discharge. Here, when the nozzle approaches the substrate to be processed, the developer discharged from the ejection ports at both ends of the nozzle may hit the peripheral edges of the substrate to be processed substantially at the same time. By this,
It is possible to efficiently supply the developing solution from each nozzle ejection port onto the substrate to be processed without wasting a part thereof.

Further, in order to prevent development unevenness from occurring in the central portion of the substrate to be processed, it is preferable to discharge from a predetermined one of the plurality of discharge ports at a set position within the moving range of the nozzle. The developer may be supplied so as to surround the center of rotation of the substrate to be processed.

[0012]

DETAILED DESCRIPTION OF THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings.

First, a coating and developing treatment system including a developing device according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3 are views showing the entire configuration of the coating and developing treatment system, FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.

In this processing system, a plurality of semiconductor wafers W as substrates to be processed are placed in a wafer cassette CR, for example, two semiconductor wafers W.
A cassette station 10 for loading / unloading a semiconductor wafer W into / out of the system in units of 5 sheets from the outside and a semiconductor station 1 in the coating / developing process. Wafer W
A semiconductor wafer between a processing station 12 in which various single-wafer processing units for performing a predetermined processing are arranged at predetermined positions in multiple stages and an exposure apparatus (not shown) provided adjacent to the processing station 12. It has a configuration in which an interface unit 14 for delivering W is integrally connected.

In the cassette station 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR, are arranged at the positions of the projections 20a on the cassette mounting table 20, with their respective wafer entrances / outlets directed toward the processing station 12 side.
A wafer carrier 22 that is placed in a line in the direction and is movable in the cassette arrangement direction (X direction) and in the wafer arrangement direction (Z direction) of the wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It is supposed to do. Further, the wafer carrier 22 is configured to be rotatable in the θ direction, and as will be described later, the alignment unit (ALIM) and the extension unit (ALIM) belonging to the multi-stage unit section of the third group G3 on the processing station 12 side. EXT) is also accessible.

In the processing station 12, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 24 is provided at the center, and all the processing units are multi-staged around one set or a plurality of sets. It is located in. In this example, 5
In the multistage arrangement configuration of the groups G1, G2, G3, G4 and G5, the multistage units of the first and second groups G1 and G2 are arranged side by side on the front side (front side in FIG. 1) of the system and the third group G3. The multistage unit is arranged adjacent to the cassette station 10, the multistage unit of the fourth group G4 is arranged adjacent to the interface section 14, and the multistage unit of the fifth group G5 is arranged on the back side.

As shown in FIG. 2, in the first set G1, a resist coating unit (COT) according to the present embodiment is used as a spinner type processing unit for placing a semiconductor wafer W on a spin chuck in a cup CP and performing a predetermined process. And the developing units (DEV) are stacked in two stages in order from the bottom.
Also in the second group G2, the resist coating unit (COT) and the developing unit (DEV) according to this embodiment are stacked in two stages in order from the bottom. Resist coating unit (CO
In T), the drainage of the resist solution is troublesome both mechanically and in terms of maintenance. Therefore, it is preferable to dispose the resist solution in the lower stage. However, it is also possible to arrange them in the upper stage if necessary.

As shown in FIG. 3, in the third group G3, an oven-type processing unit such as a cooling unit (COL) or an adhesion unit (AD) for mounting a semiconductor wafer W on a mounting table SP and performing a predetermined process. ), Alignment unit (ALIM), extension unit (EXT), pre-baking unit (PREBAK)
E) and post-baking unit (POBAKE)
Are stacked in 8 layers in order from the bottom. Also in the fourth group G4, an oven type processing unit such as a cooling unit (COL), an extension / cooling unit (EXTCOL), an extension unit (E) is used.
XT), a cooling unit (COL), a pre-baking unit (PREBAKE), and a post-baking unit (POBAKE) are stacked, for example, in eight stages from the bottom.

Thus, the cooling units (COL) and (EXTCOL) having a low processing temperature are arranged in the lower stage, and the baking unit (PREBAKE) having a high processing temperature,
By arranging the post baking unit (POBAKE) and the adhesion unit (AD) in the upper stage,
Thermal mutual interference between the units can be reduced. However, a random multi-stage arrangement is also possible.

The interface section 14 has the same size as the processing station 12 in the depth direction, but is made small in the width direction. Interface unit 14
A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages on the front side, a peripheral exposure device 28 is arranged on the rear side, and a wafer transfer body 26 is arranged on the central part. There is. The wafer carrier 26 is
By moving in the X and Z directions, both cassettes CR and BR and the peripheral exposure device 28 are accessed. Further, the wafer carrier 26 is configured to be rotatable in the θ direction, and is transferred to the extension unit (EXT) belonging to the multistage unit of the fourth group G4 on the processing station 12 side and the wafer transfer on the adjacent exposure apparatus side. A platform (not shown) is also accessible.

Although this processing system is installed in a clean room, the efficiency of vertical laminar flow in the system is used to improve the cleanliness of each part. 4 and 5
Shows the flow of clean air in the system.

4 and 5, air supply chambers 12a, 14a and 16a are provided above the cassette station 10, the processing station 12 and the interface section 14, respectively.
Are provided, and each air supply chamber 12a, 14a, 16
Filters with a dustproof function, for example, ULPA filters 30, 32, and 34 are attached to the lower surface of a.

As shown in FIG. 5, an air conditioner 36 is installed outside or behind this processing system, and air is supplied from this air conditioner 36 through a pipe 38 to each air supply chamber 12a,
14a, 16a, clean air is supplied from the ULPA filters 30, 32, 34 of the air supply chambers to the respective parts 10, 12, 14 by downflow. The downflow air is collected in an exhaust port 42 at the bottom through a plurality of ventilation holes 40 provided at appropriate places in the lower part of the system, and is collected from the exhaust port 42 through a pipe 44 to an air conditioner 36. It circulates.
Alternatively, the gas may be discharged to the outside through the exhaust port 42 without being circulated.

As shown in FIG. 4, in the cassette station 10, the space above the cassette mounting table 20 and the movement space of the wafer transfer arm 22 are hanging wall type partition plates 11.
Are separated from each other by the downflow air so that they can flow separately in both spaces.

As shown in FIGS. 4 and 5, in the processing station 12, the resist coating units (COT), (COT) arranged in the lower stage of the multistage units of the first and second groups G1, G2. The ULPA filter 46 is provided on the ceiling surface of the air conditioner 36, and the air from the air conditioner 36 is supplied to the pipe 3
It is adapted to be sent to the filter 46 through a pipe 48 branched from 8. A temperature / humidity controller (not shown) is provided in the middle of the pipe 48 so that clean air having a predetermined temperature and humidity suitable for the resist coating process is supplied to the resist coating units (COT), (COT). It has become. A temperature / humidity sensor 50 is provided near the outlet side of the filter 46, and the sensor output is given to the controller of the temperature / humidity adjuster, and the temperature and humidity of the clean air are set to set values by a feedback method. It is controlled.

In FIG. 4, the spinner type processing units (COT) and (DEV) are provided with openings DR on the side walls facing the main wafer transfer mechanism 24 for the wafer and transfer arms to move in and out. A shutter (not shown) is attached to each opening DR to prevent particles or contamination from entering the main wafer transfer mechanism 24 side from each unit.

In the coating and developing treatment system having the above-mentioned structure, for example, the semiconductor wafer W is carried in order and the respective treatments are carried out as follows.

First, unprocessed semiconductor wafers W are unloaded from the wafer cassette CR one by one by the wafer carrier 22 and loaded into the alignment unit (ALIM). The semiconductor wafer W positioned here is transferred to the main wafer transfer mechanism 2
4 to carry out and carry into an adhesion unit (AD) for adhesion processing. After completion of this adhesion process, the semiconductor wafer W is transferred to the main wafer transfer mechanism 24.
Are carried out and carried into a cooling unit (COL), where they are cooled.

Hereinafter, the semiconductor wafer W is applied to the resist coating unit (COT) and the pre-baking unit (PREBA).
KE), extension cooling unit (EX
TCOL), an interface unit 14 to the exposure apparatus, and then an extension unit (EXT) of the fourth group G4, a developing unit (DEV), a post-baking unit (POBAKE), and an extension of the third group G3. Each semiconductor wafer W is transferred to a tension unit (EXT) or the like for each processing, and the processed semiconductor wafer W is stored in the wafer cassette CR.

Next, the structure of the developing unit (DEV) in this embodiment will be described with reference to FIGS. 6 to 8 and FIGS. 13 to 15. FIG. 6 is a partial cross-sectional schematic side view showing the configuration of the main part of the developing unit (DEV), and FIGS. 7 and 8 are first and second developing solution supply nozzles at the time of scanning in the developing unit (DEV). It is a schematic plan view which shows each position. FIG. 13 is a sectional view showing the internal structure of the developing solution supply nozzle according to the embodiment. 14 and 15
FIG. 6A is a cross-sectional view showing an internal configuration of a developing solution supply nozzle according to a modification and a perspective view schematically showing a configuration of a main part.

In this developing unit (DEV), the spin chuck 60 is arranged at the center of the inside of the annular cup CP. The semiconductor wafer W to be subjected to the developing process is transferred into the unit by the transfer arm (not shown) of the main wafer transfer mechanism 24 and placed on the spin chuck 60. The spin chuck 60 is configured to rotate by the rotational driving force of the drive motor 62 while holding the semiconductor wafer W by vacuum suction. Cup C
The liquid that has fallen into P or the sucked gas is sent from the drain port (not shown) at the bottom of the cup CP to a trap tank (not shown) through a drain pipe (not shown). ing.

A ring member 66 is attached to the upper end of the inner wall surface 64 of the cup CP so as to form an appropriate gap G with the back surface of the peripheral portion of the semiconductor wafer W on the spin chuck 60. Inside the ring member 66 and below the spin chuck 60, a bottomed cylindrical buffer chamber 68 is provided. One or a plurality of gas introduction ports 68a are formed on the bottom surface of the buffer chamber 68, and gas such as air or N2 gas from a gas supply source (not shown) is introduced into the buffer chamber 68 through the gas introduction port 68a. The gas introduced into the room passes through the gap G between the ring member 66 and the semiconductor wafer W and escapes to the outside of the room. In this way
An air flow flows from the inside to the outside of the wafer W along the back surface of the peripheral portion of the semiconductor wafer W on the spin chuck 60.

The developing solution supply nozzle 70 in this developing unit (DEV) is supported by a horizontal nozzle arm 76 via a vertical support rod 72 and a joint member 74, and a drive mechanism (which is connected to the horizontal nozzle arm 76). By horizontally driving (not shown), the nozzle standby portion 78 (FIG. 7) arranged outside or on the side of the cup CP and a predetermined position set above the spin chuck 60 are linearly moved. Has become. In the nozzle standby section 78,
In order to discard the developing solution which has been dried and deteriorated at the tip of the developing solution supply nozzle 70, dummy dispensing is performed regularly or as needed.

In FIG. 13, the developing solution supply nozzle 70 in this embodiment has a large number (n) of discharge ports 80 (1), 80 (2), ... n) is provided in a line, and a temperature control unit 84 for maintaining the temperature of the developer constant is integrally connected. The discharge part 82 and the temperature control part 84 may be made of SUS or aluminum, for example.

A pair of cylindrical pipe connecting portions 86 and 88 are provided in a projecting manner at both ends of the back side of the temperature adjusting portion 84 when viewed from the discharge portion 82, and the temperature adjusting of the outer pipe is performed at these pipe connecting portions 86 and 88. Tube 90
b, 92b and a pair of double tubes 90, 92 composed of inner tube developer supply tubes 90a, 92a are connected to each other.
The temperature control pipes 90b and 92b on the outside are temperature control water ports 86a and 88 having relatively large diameters near the openings of the pipe connection portions 86 and 88.
a developer supply pipes 90a and 92a provided inside
Is attached to the developing solution ports 86b and 88b having a relatively small diameter inside the pipe connecting portions 86 and 88.

Inside the temperature control unit 84, the discharge ports 80 (1),
A temperature control water passage 94 extending parallel to the arrangement direction of 80 (2), ..., 80 (n) is formed. This temperature control water passage 94
The temperature control water ports 86a and 88a are communicated with each other through passages 96 and 98 formed around the developer supply pipe 90 and the developer ports 86b and 88b. The temperature control water that has passed through the temperature control pipe 90b from one of the temperature control water supply units (not shown) and is introduced into the temperature control water port 86a on the inlet side is the temperature control water passages 96, 94, 98. Through the temperature control water port 88a on the exit side
And reaches the temperature control water supply section through the other temperature control tube 92b.

Inside the discharge section 80, the developing solution inlets 86b, 8 are provided through the developing solution passages 100, 102 in the temperature control section 84.
8b, an L-shaped developing solution passage 104 is formed, and each discharge port 80 is provided in the longitudinal passage of the developing solution passage 104.
(i) is connected at regular intervals. The developer introduced from the developer supply portion (not shown) through the developer supply pipes 90a, 92a and introduced into the developer inlets 86b, 88b flows in the developer passages 100, 102, 104, Each outlet 8
It is designed to be discharged from 0 (i).

The developing solution supplied from the developing solution supply section to the nozzle 70 is maintained at a constant temperature by the temperature control water of the temperature control tube 90b and the temperature control section 84 in the developer supply tube 90a and the discharge section 82, respectively. Therefore, the developer discharged from each discharge port 80 (i) is in a good liquid state. In addition,
Each discharge port 80 (i) of the developing solution supply nozzle 70 faces obliquely downward, and the developing solution is discharged in the same direction.

In a modification shown in FIGS. 14 and 15, each discharge port 80 (i) is provided in the discharge portion 82 of the developer supply nozzle 70.
The flow straightening plate 110 for equalizing the flow rate of the developing solution is provided. In this example, the recess 11 is formed on the upper surface of the discharge portion 82.
2 is formed, and a box-shaped member 114 having an open top is formed in the recess 112 so that the bottom plate portion (rectifying plate) 110 is recessed in the recess 11.
It is attached in a state that it is somewhat floating from the bottom of 2.

The bottom plate portion (rectifying plate) 110 of the box-shaped member 114
, The lower discharge ports 80 (1), 80 (2), ...
116 (n) having holes 116 (1), 116 (2), ... 116 (n) having an appropriate diameter are formed at positions (locations) facing (n). The box-shaped member 114 and the lower surface 85 of the temperature control unit 84 form a buffer chamber 118, and the outlets of the developer passages 100 and 102 of the temperature control unit 84 face both ends of the buffer chamber 118.

The developing solution flowing through the developing solution passages 100, 102 is once received by the buffer chamber 118, and then the holes 116 (1), 116 (2), ...
It is sent to the discharge ports 80 (1), 80 (2), ... 80 (n) in a state of being rectified into a substantially uniform flow through (n). As a result, the developing solution is discharged from the discharge ports 80 (1), 80 (2), ... 80 (n) at a substantially uniform flow rate.

The mounting structure of the current plate 110, the arrangement position and the number of the holes 116, etc. can be arbitrarily selected or modified.

As shown in FIGS. 7 and 8, the developing solution supply nozzle 70 has discharge ports 80 (1), 80 (2), ... 80 (n).
Is not horizontal with respect to the horizontal nozzle arm 76, but is inclined at an angle φ (preferably 10 to 24).
゜) is attached. When the development process is performed,
The horizontal nozzle arm 76 moves in the horizontal direction (direction of arrow F) perpendicular to the axial direction thereof, and carries the developer nozzle 70 from the nozzle standby portion 78 to a position above the semiconductor wafer W.

Next, the steps of the developing process in the developing unit (DEV) of this embodiment will be described with reference to FIGS.

Basically, the developing process in the developing unit (DEV) includes five steps as shown in FIG.
,,, are included.

First, in the first step, the horizontal nozzle arm 76 is driven in the direction of the arrow F to set the developing solution nozzle 70 above the peripheral portion of the semiconductor wafer W from the position of the nozzle standby portion 78. To the position P1 (position shown by the solid line in FIG. 6). Each discharge port 8 of this nozzle 70
0 (1), 80 (2), ... 80 (n) are directed to the upper opening of the cup CP. On the other hand, the drive motor 62 is activated to rotationally drive the spin chuck 60, and the rotation speed of the semiconductor wafer W as the object to be processed is set to a high first rotation speed, for example, 1000.
Start up to rpm.

Next, in the second step, as shown in FIGS. 6 and 7, the developing solution nozzle 70 is placed at the first position P1.
The discharge of the developing solution is started. The discharge flow rate may be set to 0.8 liter / second, for example. In this way, the developing solution vigorously ejected from the developing solution supply nozzle 70 does not hit the semiconductor wafer W but falls directly into the cup CP and is collected. The ejection of the developing solution outside the wafer at the first position P1 is performed for a predetermined time, for example, 0.3 seconds. The rotation speed of the semiconductor wafer W is maintained at the first speed (1000 rpm) also during the second step.

Next, in the third step, while the developing solution is being ejected from the developing solution supply nozzle 70 at a predetermined flow rate of, for example, 0.8 liter / sec, an appropriate scan speed of, for example, 60.
The horizontal nozzle arm 76 moves in the direction of arrow F at -100 mm / sec, and takes a predetermined time, for example, 1.0 sec,
Move the developing solution nozzle 70 from the first position P1 to the semiconductor wafer W.
It is moved to a second position P2 (position shown in FIG. 8) set above the center of the.

In the movement from the first position P1 to the second position P2, the developing solution supply nozzle 70 causes the discharge ports 8 to
0 (1), 80 (2), ... 80 (n) The semiconductor wafer W is scanned while ejecting the developing solution in a more stable ejection flow.

On the other hand, also in this third step, the rotation speed of the semiconductor wafer W is maintained at the first speed (1000 rpm). Thus, in the third step, the developing solution supply nozzle 70
The semiconductor wafer W in which the discharged developer is rotated at high speed
Then, the entire surface of the wafer is wetted with a developer having a thin film thickness (pre-wet).

As can be seen from FIG. 7, when the developing solution from the developing solution supply nozzle 70 approaches the semiconductor wafer W immediately after the start of scanning, the ejection openings 80 (1) at both ends of the developing solution supply nozzle 70. , 80 (n), it is preferable that the developing solution hits (rides) the peripheral edge of the semiconductor wafer W almost at the same time.

Next, in the fourth step, the rotation speed of the semiconductor wafer W is rotated at a second rotation speed, for example 100 rpm, which is a medium speed which is considerably lower than the first rotation speed (1000 rpm), and at the same time, the second rotation speed is set. At a position P2, a predetermined flow rate from the developer supply nozzle 70, for example, 0.8 liter /
Discharge the developing solution in seconds. This process is performed for a predetermined time, for example, 1.5 seconds, whereby the liquid layer of the developing solution on the semiconductor wafer W becomes thicker from the central portion of the wafer.

What is important here is the magnitude of the acceleration when decelerating from the high speed first rotation speed to the middle speed second rotation speed. If this acceleration is too large, the centripetal force exerted on the developing solution on the semiconductor wafer W becomes excessive, which may cause a phenomenon in which the developing solution is attracted to the center of the wafer, so-called pullback. When pullback occurs, bubbles are trapped in the liquid layer at the center of the wafer, and development defects are likely to occur. On the other hand, if the deceleration acceleration is too small,
There is a problem in that the deceleration time is prolonged and the developer discharge time is lengthened accordingly, and the total developer discharge amount is increased.

As a result of extensive studies and experiments conducted by the present inventor on this problem, when the value of the acceleration for deceleration is selected to a value corresponding to the first rotation speed of high speed, for example, the first rotation speed becomes In the case of 1000 rpm, it was found that pullback or development defects can be effectively prevented in the shortest deceleration time by selecting around 1000 rpm / sec.

Next, in the fifth step, the semiconductor wafer W is rotated at a third rotation speed, for example, 30 rpm, which is lower than the second rotation speed (100 rpm), and at the same time the second position P2 is reached. Then, the developing solution is discharged from the developing solution supply nozzle 70 at a predetermined flow rate, for example, 0.8 liter / sec. This process is performed for a predetermined time, for example, 2.0 seconds. In this way, the developing solution discharged from the developing solution supply nozzle 70 uniformly falls on the surface of the semiconductor wafer W rotating at a low speed for a predetermined period of time, and the entire surface of the wafer is substantially uniformly filled with a desired thickness.

Since the deceleration width from the second rotation speed (100 rpm) to the third rotation speed (30 rpm) is small, the deceleration acceleration may be selected arbitrarily, for example, set to 1000 rpm / sec. Good.

The developer can be safely and uniformly deposited on the semiconductor wafer W through the series of steps described above. Particularly, in the present embodiment, the semiconductor is sandwiched between the third step (pre-wet step) of rotating the semiconductor wafer W at a high speed to supply the developing solution and the fourth step of rotating the semiconductor wafer W at a medium speed to supply the developing solution. Since the wafer W is rotated at a low speed to shift to the fifth step (liquid piling step) for supplying the developing solution, the developing solution on the semiconductor wafer W is kept stable,
Pullback can be effectively prevented. Moreover,
When the high speed rotation in the third step is switched to the medium speed rotation in the fourth step, the speed is reduced at an acceleration corresponding to the speed of the high speed rotation before the switching, so that pullback can be prevented more effectively. Therefore, development defects can be reduced as much as possible.

After the developing solution is poured on the semiconductor wafer W as described above, this state is maintained for a predetermined time to complete the developing process. Developer supply nozzle 70
After the end of the fifth step, the horizontal nozzle arm 76 transfers the liquid crystal in the direction opposite to the arrow F and returns it to the nozzle standby portion 78.

In the third to fifth steps, as shown in FIG. 10, it is desirable to separate the developing solution supply nozzle 70 from the semiconductor wafer W by an appropriate distance h (for example, 8 mm). If this distance h is too small (for example, 5 mm
(Below) the developer on the semiconductor wafer W may be attached to the lower end of the developer supply nozzle 70. If this interval h is too large (for example, 14 mm or more), the impact of the developer on the wafer W becomes large, Development defects are likely to occur.

Further, each discharge port 8 of the developing solution supply nozzle 70
It is desirable that the orientation (nozzle angle) θ of 0 (i) is also selected to an appropriate angle, for example, 45 °. If the nozzle angle θ is too large, it is difficult to put the developing solution in the cup CP in the second step, and it becomes difficult to supply the trailing follow-up type developing solution described later. On the other hand, if the nozzle angle θ is too small, as shown in FIG. 11, the developer dripping 120 may occur at the discharge port 80 (i) and the nozzle 70 may be contaminated.

Further, in the fourth and fifth steps, as shown in FIG. 12A, the developing solution discharged from one discharge port having the developing solution supply nozzle 70, for example, 80 (2) is used as the semiconductor wafer. In order to prevent uneven development, it is desirable to set the second position P2 so that the center point CW of W is supplied so as to completely surround it. As shown in FIG. 12B, the developer discharged from the two discharge ports, for example, 80 (1) and 80 (2) is the center point CW of the semiconductor wafer W.
If they are supplied in a form of colliding with each other in the vicinity, uneven development easily occurs there.

The scanning of the developing solution supply nozzle 70 in this embodiment has some characteristics. One of them is the discharge of the developing solution at a position (first position P1) where the developing solution supply nozzle 70 does not contact the semiconductor wafer W in the second step during the movement of the developing solution supply nozzle 70 from the side to the upper side of the semiconductor wafer W as described above. But there are other important features.

That is, in the third to fifth steps, the developing solution discharged from the developing solution supply nozzle 70 hits the wafer surface in a direction that does not oppose the rotation of the semiconductor wafer W. That is, the developing solution from the nozzle 70 hits the wafer surface in an oblique direction, and the oblique contact does not oppose the rotation of the semiconductor wafer W. Particularly, in the fourth and fifth steps, as shown in FIG. 8, the developing solution supply nozzle 7 is moved to the second position P2.
The developer discharged from 0 is almost behind the rotation of the semiconductor wafer W and hits the wafer surface.

In order to perform such follow-up type supply, the scan area is set to the nozzle position of FIG.
It is better to set it between the nozzle position and. This scan area depends on the number and pitch of the ejection openings 80 of the nozzle 70, but is set within a quarter area of the semiconductor wafer W, that is, within a 90 ° angle area around the rotation center of the semiconductor wafer W. In this case, it is preferable to perform scanning so that the discharge port 80 (1) at the end of the nozzle 70 is orthogonal to the rotation direction of the semiconductor wafer W.

As described above, since the developing solution from the developing solution supply nozzle 70 is supplied on the semiconductor wafer W by soft impact, the surface of the wafer is damaged, or bubbles are generated in the developing solution filled up. Nonetheless, the developing process is performed safely and satisfactorily.

A rinse nozzle (not shown) is provided separately from the developing solution supply nozzle 70. After the developing process, the rinse solution is supplied to the semiconductor wafer W through the rinse nozzle to wash the developing solution on the wafer surface. Be dropped. Since the rinse mechanism is not related to the gist of the present invention, its description is omitted.

The spin chuck in the above embodiment,
The structure, shape, and the like of each part such as the cup and the nozzle are examples, and various modifications are possible. The coating and developing treatment system shown in FIGS. 1 to 5 is an example, and the present invention can be applied to other developing systems or apparatuses. Further, although the above embodiment relates to the apparatus for developing the photoresist on the semiconductor wafer, other substrates to be processed can be used.

[0068]

As described above, according to the developing apparatus of the present invention, the substrate to be processed can be protected and the quality of the developing process can be improved.

[Brief description of drawings]

FIG. 1 is a developing unit (apparatus) according to an embodiment of the present invention.
It is a top view showing the whole composition of the coating development processing system containing.

FIG. 2 is a front view showing the configuration of the coating and developing treatment system of FIG.

FIG. 3 is a rear view showing the configuration of the coating and developing treatment system of FIG.

FIG. 4 is a schematic front view showing a flow of clean air in the coating and developing treatment system of FIG.

5 is a schematic side view showing the flow of clean air in the coating and developing treatment system of FIG.

FIG. 6 is a partial cross-sectional schematic side view showing the configuration of the main part of the developing unit in the embodiment.

FIG. 7 is a schematic plan view showing the position of a developing solution supply nozzle at the start of developing solution discharge in the developing unit of the embodiment.

FIG. 8 is a schematic plan view showing the position of the developing solution supply nozzle at the end of scanning in the developing unit of the embodiment.

FIG. 9 is a schematic side view for explaining a development processing step in the development unit of the embodiment.

FIG. 10 is a schematic side view for explaining suitable nozzle angles and height positions in the developing process of the embodiment.

FIG. 11 is a schematic side view showing the dripping of the developing solution at the discharge port of the nozzle.

FIG. 12 is a schematic side view showing a method of supplying a developing solution to a wafer center point in the developing process of the embodiment.

FIG. 13 is a cross-sectional view showing the configuration of a developing solution supply nozzle in the developing unit of the embodiment.

FIG. 14 is a sectional view showing a configuration of a developing solution supply nozzle according to a modification.

FIG. 15 is a perspective view schematically showing a configuration of a main part of the developing solution supply nozzle of FIG.

[Explanation of symbols]

CP Cup 60 spin chuck 66 ring member 68 buffer room 68a Gas inlet 70 Developer Supply Nozzle 76 Horizontal nozzle arm 80 (1)… 80 (n) Discharge port

─────────────────────────────────────────────────── --- Continuation of the front page (56) References JP-A-4-44227 (JP, A) JP-A-4-124812 (JP, A) JP-A-5-234879 (JP, A) JP-A-59- 78342 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/027 G03F 7/30 501

Claims (10)

(57) [Claims] 1. A developing device in which a substrate to be processed is placed on a spin chuck and rotated while supplying a developing solution to the surface of the substrate to be processed through a nozzle, wherein the nozzle is linear in the horizontal direction. A plurality of discharge ports arranged in a line, the nozzle is moved substantially linearly in the horizontal direction above the substrate to be processed, and the discharge port is arranged with respect to an axis orthogonal to the moving direction of the nozzle in a horizontal plane. The developing device is characterized in that the arrangement direction of is inclined by a predetermined angle. 2. The developing apparatus according to claim 1, wherein the developing solution from the nozzle is supplied to the substrate to be processed within a region of 90 ° around the rotation center of the substrate to be processed. 3. The developing solution discharged from a predetermined one of the plurality of discharge ports at a set position within a moving range of the nozzle is supplied in such a manner as to surround a rotation center point of the substrate to be processed. The developing device according to claim 1, wherein the developing device is a developing device. 4. The nozzle is moved upward from the side of the substrate to be processed, and the developing solution is started to be discharged from the nozzle at a position where it does not contact the substrate to be processed during the movement. The developing device according to claim 1. 5. The developing device according to claim 4, wherein the nozzle is moved to a predetermined position above the substrate to be processed while continuing the discharge of the developer after the discharge of the developer is started. 6. The developing solution discharged from the discharge ports at both ends of the nozzle hits the peripheral edges of the substrate to be processed substantially at the same time when the nozzle approaches the substrate to be processed. The developing device according to 1. 7. A cup for trapping the developing solution scattered from the substrate to be processed is provided around the spin chuck, and the developing solution ejected from the nozzle at the start of ejection of the developing solution is contained in the cup. The developing device according to claim 4, wherein the developing device is directly received. 8. The developing device according to claim 1, wherein an ejection port of the nozzle is obliquely downward at a predetermined angle. 9. The method according to claim 1, wherein the developing solution from the nozzle hits the surface of the substrate to be processed in a direction that does not oppose rotation of the substrate to be processed. Development device. 10. The method according to claim 1, wherein the arrangement direction of the discharge ports is inclined with respect to an axis orthogonal to the nozzle movement direction within a range of 10 ° to 24 °. Developing device.