JP2002124465A - Developer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance the quality of a developing process while protecting a substrate being processed. SOLUTION: A developer supply nozzle 70 has ejection openings 80(1), 80(2),..., 80(n) arranged in a direction not horizontal to a horizontal nozzle arm 76 but inclining slightly. At the time of development, the horizontal nozzle arm 76 moves in a horizontal direction (shown by an arrow F) perpendicular to the axial direction thereof to carry the developer nozzle 70 from a nozzle waiting part 78 to the upper set position of a semiconductor wafer W. During movement to the set position, the developer supply nozzle 70 scans the semiconductor wafer W ejecting developer in stabilized jet flow from each ejection opening 80(1), 80(2),..., 80(n).

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a spray type developing apparatus for applying a developing solution onto a substrate to be processed by using a spinner mechanism and a nozzle.

[0002]

2. Description of the Related Art In a photolithography process for manufacturing a semiconductor device, a photoresist is applied to a surface of a semiconductor wafer (resist coating process), a mask pattern is printed on the resist (exposure process), and a photosensitive portion of the resist or non-exposed portion is exposed. The photosensitive section is selectively dissolved in a developer (development step) to form a resist pattern on the wafer surface. Conventionally, in this type of developing process, a spray-type developing device that sprays and supplies a developing solution from a nozzle onto a wafer surface while rotating a semiconductor wafer by a spinner mechanism and fills the surface with surface tension has been used. .

In general, in a spray-type developing device, the nozzle is made to stand by at a predetermined nozzle standby portion when the developer is not being filled, and when the nozzle is not used for a long time, the developer at the tip of the nozzle may be deteriorated. Therefore, a predetermined amount of the developing solution is discharged and discarded at the nozzle standby portion or at a specially provided dummy dispensing portion. Also, in order to reduce the impact on the semiconductor wafer when the developing solution from the nozzle hits the semiconductor wafer, the nozzle outlet may be configured with a number of fine holes, and the developing solution may be discharged so as to seep out from those fine holes. Is being done.

[0004]

In the conventional spray type developing apparatus, the developing solution from the nozzle is applied to the surface of the semiconductor wafer regardless of whether the discharge port of the nozzle has a large number of pores as described above or not. It is designed to hit almost vertically. However, since the semiconductor wafer is rotating, the semiconductor wafer receives a considerable impact when the developer is vertically applied thereto. If the impact of the developing solution is strong, the wafer surface may be damaged, or bubbles may be generated in the developing solution, causing uneven development.

Further, in the conventional apparatus, after the dummy dispensing is performed in advance at the nozzle standby section or the dummy dispensing section as described above, the nozzle is moved to above the semiconductor wafer, and the developing solution is discharged at a predetermined developing solution discharging position. Was discharged. However, immediately after the start of the discharge, the developing solution is vigorously discharged from the nozzle, so that there is a problem that the developer hits the wafer surface with a strong impact.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to provide a developing apparatus for protecting a substrate to be processed and improving the quality of a developing process.

[0007]

In order to achieve the above object, a developing apparatus of the present invention comprises a substrate to be processed placed on a spin chuck and rotated while a developing solution is supplied to the substrate through a nozzle. In the developing device, the nozzle has a plurality of discharge ports arranged linearly in the horizontal direction, and moves the nozzle substantially linearly in the horizontal direction above the substrate to be processed. The arrangement direction of the discharge ports is obliquely inclined by a predetermined angle with respect to an axis perpendicular to the moving direction of the nozzle in a horizontal plane.

In the developing device of the present invention, the nozzle for supplying the developing solution to the surface of the rotating substrate to be processed has a plurality of discharge ports arranged linearly in the horizontal direction. When this nozzle moves (scans) substantially linearly in a horizontal direction above the substrate while discharging the developing solution from each discharge port, the arrangement direction of the nozzle discharge ports with respect to the axis perpendicular to the nozzle moving direction in the horizontal plane Are scanned in a state in which is tilted by a predetermined angle.

In the developing apparatus of the present invention, it is preferable that the developing solution supplied from each nozzle discharge port is supplied in a direction that hardly opposes the rotation of the substrate to be processed, and that a follow-up type soft-impact developing solution is supplied in the entire scanning area. May supply the developing solution from the nozzle to the substrate within a region of 90 ° around the rotation center of the substrate. Further, it is preferable that each discharge port is inclined obliquely downward at a predetermined angle (for example, 45 °). The angle at which the arrangement direction of the nozzle discharge ports is obliquely inclined with respect to an axis orthogonal to the nozzle moving direction is 10 degrees.
It is preferable to set within the range of {24}.

Preferably, the nozzle is moved upward from the side of the substrate to be processed so that the substrate is not damaged by the impact of the developer when the nozzle starts discharging the developer. During the movement, the discharge of the developing solution from the nozzle may be started at a position where the developing solution is not applied to the substrate to be processed. In this case, a cup for trapping the developer scattered from the substrate to be processed may be provided around the spin chuck, and the developer discharged from the nozzle may be directly received by the cup when the discharge of the developer is started. After the start of the discharge of the developing solution, the nozzle may be moved to a predetermined position above the substrate to be processed while the discharge is continued. Here, when the nozzle approaches the substrate to be processed, the developing solution discharged from the discharge ports at both ends of the nozzle may substantially simultaneously hit the peripheral edge of the substrate to be processed. This allows
The developing solution from each nozzle discharge port can be efficiently supplied onto the substrate to be processed without wasting even part of the developing solution.

In order to prevent development unevenness from occurring at the center of the substrate to be processed, it is preferable that the liquid is discharged from a predetermined one of the plurality of discharge ports at a set position within the moving range of the nozzle. The developing solution may be supplied so as to surround the rotation center point of the substrate to be processed.

[0012]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

First, a coating and developing system including a developing device according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3 are views showing the overall configuration of the coating and developing treatment system. FIG. 1 is a plan view, FIG. 2 is a front view, and FIG. 3 is a rear view.

In this processing system, a plurality of semiconductor wafers W as substrates to be processed, for example,
A cassette station 10 for loading and unloading semiconductor wafers W from the outside into and out of the system in units of five wafers, and loading and unloading semiconductor wafers W into and from the wafer cassette CR; Wafer W
Between a processing station 12 in which various single-wafer processing units for performing predetermined processing are arranged at predetermined positions in a multistage manner, and an exposure apparatus (not shown) provided adjacent to the processing station 12. It has a configuration in which an interface unit 14 for delivering and receiving W is integrally connected.

In the cassette station 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR are provided at the positions of the projections 20 a on the cassette mounting table 20 with their respective wafer entrances facing the processing station 12.
A wafer carrier 22 which is placed in a row in the direction and is movable in the cassette arrangement direction (X direction) and in the wafer arrangement direction (Z direction) of wafers stored in the wafer cassette CR selectively accesses each wafer cassette CR. It is supposed to. Further, the wafer carrier 22 is configured to be rotatable in the θ direction, and as will be described later, an alignment unit (ALIM) and an extension unit (ALIM) belonging to the multistage unit of the third set G3 on the processing station 12 side. EXT).

In the processing station 12, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 24 is provided at the center, and all the processing units are multi-staged around one or more sets around the center. Are located in In this example, 5
The multi-stage arrangement of the sets G1, G2, G3, G4, G5 is such that the multi-stage units of the first and second sets G1, G2 are juxtaposed on the front side of the system (front side in FIG. 1). The multistage units are arranged adjacent to the cassette station 10, the multistage units of the fourth set G4 are arranged adjacent to the interface unit 14, and the multistage units of the fifth set G5 are arranged on the back side.

As shown in FIG. 2, in the first set G1, a resist coating unit (COT) according to the present embodiment is a spinner type processing unit which performs a predetermined process by placing a semiconductor wafer W on a spin chuck in a cup CP. The developing unit (DEV) is stacked in two stages from the bottom.
Also in the second set G2, the resist coating unit (COT) and the developing unit (DEV) according to the present embodiment are stacked in two stages from the bottom. Resist coating unit (CO
In T), the drainage of the resist solution is troublesome both mechanically and in terms of maintenance. Therefore, it is preferable to dispose the resist solution in the lower stage. However, they can be arranged in the upper stage as needed.

As shown in FIG. 3, in the third set G3, an oven-type processing unit, such as a cooling unit (COL) or an adhesion unit (AD), for performing a predetermined process by mounting the semiconductor wafer W on the mounting table SP. ), Alignment unit (ALIM), extension unit (EXT), pre-baking unit (PREBAK)
E) and post-baking unit (POBAKE)
Are stacked in eight steps from the bottom. Also in the fourth set G4, oven-type processing units such as a cooling unit (COL), an extension cooling unit (EXTCOL), and an extension unit (E
XT), a cooling unit (COL), a pre-baking unit (PREBAKE), and a post-baking unit (POBAKE) are stacked in, for example, eight stages from the bottom.

As described above, the cooling units (COL) and (EXTCOL) having a low processing temperature are arranged in the lower stage, and the baking unit (PREBAKE) having a high processing temperature and
By arranging the post-baking unit (POBAKE) and the adhesion unit (AD) at the top,
Thermal interference between units can be reduced. However, a random multi-stage arrangement is also possible.

The interface section 14 has the same dimensions as the processing station 12 in the depth direction, but is made smaller in the width direction. Interface section 14
A portable pickup cassette CR and a stationary buffer cassette BR are arranged in two stages at the front, a peripheral exposure device 28 is arranged at the back, and a wafer carrier 26 is provided at the center. I have. This wafer carrier 26 is
It moves in the X and Z directions to access both cassettes CR and BR and the peripheral exposure device 28. Further, the wafer carrier 26 is configured to be rotatable in the .theta. Direction, and to the extension unit (EXT) belonging to the multistage unit of the fourth set G4 on the processing station 12 side, and to the wafer transfer on the adjacent exposure apparatus side. A table (not shown) can be accessed.

Although this processing system is installed in a clean room, the cleanliness of each part is further increased in the system by an efficient vertical laminar flow system. 4 and 5
2 shows the flow of clean air in the system.

4 and 5, air supply chambers 12a, 14a, and 16a are provided above the cassette station 10, the processing station 12, and the interface unit 14.
Are provided, and each air supply chamber 12a, 14a, 16
Filters with a dustproof function, for example, ULPA filters 30, 32, and 34 are attached to the lower surface of a.

As shown in FIG. 5, an air conditioner 36 is provided outside or behind the processing system, and air is supplied from the air conditioner 36 through a pipe 38 to each of the air supply chambers 12a, 12a.
Clean air is introduced into the air supply chambers 14, 16 a and supplied from the ULPA filters 30, 32, 34 in the respective air supply chambers to the respective parts 10, 12, 14 in a downflow manner. The down-flow air passes through a large number of ventilation holes 40 provided at appropriate locations below the system and is collected at an exhaust port 42 at the bottom, and is collected from the exhaust port 42 through a pipe 44 to the air conditioner 36. It is circulating.
In addition, it is also possible to configure so that the gas is discharged to the outside from the exhaust port 42 without being circulated.

As shown in FIG. 4, in the cassette station 10, the space above the cassette mounting table 20 and the moving space of the wafer transfer arm 22 are separated from each other by a hanging partition plate 11.
, And the downflow air flows separately in both spaces.

As shown in FIGS. 4 and 5, in the processing station 12, the resist coating units (COT) and (COT) arranged in the lower stage of the multistage units of the first and second sets G1 and G2. A ULPA filter 46 is provided on the ceiling of the air conditioner.
The air is sent to the filter 46 through a pipe 48 branched from the pipe 8. A temperature / humidity regulator (not shown) is provided in the middle of the pipe 48 so that clean air of a predetermined temperature and humidity suitable for the resist coating step is supplied to the resist coating units (COT) and (COT). It has become. A temperature / humidity sensor 50 is provided in the vicinity of the outlet side of the filter 46, and the sensor output is given to the control unit of the temperature / humidity regulator, and the temperature and humidity of the clean air are set to the set values by a feedback method. It is controlled.

In FIG. 4, an opening DR through which a wafer and a transfer arm enter and exit is provided on a side wall facing the main wafer transfer mechanism 24 of each of the spinner type processing units (COT) and (DEV). A shutter (not shown) is attached to each opening DR in order to prevent particles or contamination from each unit from entering the main wafer transfer mechanism 24 side.

In the coating / developing processing system having the above-described configuration, for example, the semiconductor wafers W are transported in order as follows to perform each processing.

First, unprocessed semiconductor wafers W are unloaded one by one from the wafer cassette CR by the wafer carrier 22 and loaded into the alignment unit (ALIM). The semiconductor wafer W positioned here is transferred to the main wafer transfer mechanism 2.
4 and carried into an adhesion unit (AD) for adhesion processing. After the completion of the adhesion process, the semiconductor wafer W is transferred to the main wafer transfer mechanism 24.
And carried into a cooling unit (COL), where it is cooled.

Hereinafter, the semiconductor wafer W is coated with a resist coating unit (COT) and a pre-baking unit (PREBA).
KE), extension cooling unit (EX
TCOL), and conveyed to the exposure apparatus via the interface unit 14. Then, the extension unit (EXT), the development unit (DEV), the post-baking unit (POBAKE) of the fourth set G4, and the extension of the third set G3 The semiconductor wafer W is transferred to a tension unit (EXT) or the like to perform each processing, and the processed semiconductor wafer W is stored in the wafer cassette CR.

Next, the configuration of the developing unit (DEV) according to the present embodiment will be described with reference to FIGS. 6 to 8 and FIGS. FIG. 6 is a schematic partial cross-sectional side view showing a configuration of a main part of the developing unit (DEV). FIGS. 7 and 8 show first and second developer supply nozzles of the developing unit (DEV) during scanning. It is a schematic plan view which shows a position each. FIG. 13 is a cross-sectional view showing the internal configuration of the developer supply nozzle according to one embodiment. 14 and 15
FIG. 7 is a cross-sectional view illustrating the internal configuration of a developer supply nozzle according to a modification and a perspective view schematically illustrating the configuration of a main part.

In this developing unit (DEV), a spin chuck 60 is arranged at the center inside the annular cup CP. The semiconductor wafer W to be subjected to the development processing is transferred into the unit by a transfer arm (not shown) of the main wafer transfer mechanism 24, and is placed on the spin chuck 60. The spin chuck 60 is configured to rotate by the rotational driving force of the drive motor 62 while holding the semiconductor wafer W by vacuum suction. Cup C
The liquid dropped into P or the gas sucked in is sent from a drain port (not shown) at the bottom of the cup CP to a trap tank (not shown) through a drain pipe (not shown). ing.

A ring member 66 is attached to the upper end of the inner wall surface 64 of the cup CP so as to form an appropriate gap G with the back surface of the peripheral portion of the semiconductor wafer W on the spin chuck 60. Inside the ring member 66 and below the spin chuck 60, a bottomed cylindrical buffer chamber 68 is provided. One or more gas inlets 68a are formed in the bottom surface of the buffer chamber 68, and a gas such as air or N2 gas from a gas supply source (not shown) is introduced into the buffer chamber 68 from the gas inlet 68a. The gas introduced into the room passes through the gap G between the ring member 66 and the semiconductor wafer W and exits the room. In this way,
An airflow flows from the inside to the outside of the wafer W along the back surface of the peripheral portion of the semiconductor wafer W on the spin chuck 60.

The developing solution supply nozzle 70 in the developing unit (DEV) is supported by a horizontal nozzle arm 76 via a vertical support rod 72 and a joint member 74, and is connected to a driving mechanism ( (Not shown) so as to linearly move between a nozzle standby portion 78 (FIG. 7) disposed outside or on the side of the cup CP and a predetermined position set above the spin chuck 60. Has become. In the nozzle standby unit 78,
In order to discard the developing solution that has dried and deteriorated at the tip of the developing solution supply nozzle 70, dummy dispensing is performed periodically or as needed.

In FIG. 13, the developer supply nozzle 70 of this embodiment has a large number (n) of discharge ports 80 (1), 80 (2),. n) are integrally connected to a discharge section 82 provided in a line and a temperature control section 84 for maintaining the temperature of the developer constant. The discharge unit 82 and the temperature control unit 84 may be made of, for example, SUS or aluminum.

A pair of cylindrical pipe connecting portions 86 and 88 project from both ends on the back side of the temperature controlling portion 84 when viewed from the discharge portion 82, and the pipe connecting portions 86 and 88 are connected to the outer pipe to control the temperature of the outer pipe. Tube 90
b, 92b and a pair of double pipes 90, 92 composed of inner developer supply pipes 90a, 92a, respectively.
Outer temperature control pipes 90b and 92b are relatively large diameter temperature control water ports 86a and 88 near the openings of the pipe connection portions 86 and 88, respectively.
a, and the inner developer supply pipes 90a, 92a
Are attached to the developer ports 86b and 88b having a relatively small diameter inside the pipe connection portions 86 and 88.

Inside the temperature control section 84, discharge ports 80 (1),
80 (n) are formed in parallel with the arrangement direction of 80 (n). This temperature control water passage 94
It communicates with the temperature control ports 86a, 88a through passages 96, 98 formed around the developer supply pipe 90 and the developer ports 86b, 88b. The temperature-regulated water coming from the temperature-regulated water supply section (not shown) through one temperature-regulated pipe 90b and introduced into the temperature-regulated water port 86a on the inlet side is supplied to the temperature-regulated water passages 96, 94, 98. Temperature control water port 88a on the exit side through
And is returned to the temperature-regulated water supply unit through the other temperature-regulated pipe 92b.

In the discharge section 80, the developer inlets 86b, 8 via the developer passages 100, 102 in the temperature control section 84 are provided.
8b, an L-shaped developer passage 104 communicating with the discharge port 80b is formed in the longitudinal passage of the developer passage 104.
(i) are connected at regular intervals. The developer that has passed through the developer supply pipes 90a and 92a from the developer supply unit (not shown) and has been introduced into the developer inlets 86b and 88b flows through the developer passages 100, 102, and 104, respectively. Each outlet 8
0 (i) is discharged.

The developing solution supplied to the nozzle 70 from the developing solution supply unit is maintained at a constant temperature in the developing solution supply tube 90a and the discharge unit 82 by the temperature control water of the temperature control tube 90b and the temperature control unit 84, respectively. Therefore, the developer discharged from each discharge port 80 (i) is in a good liquid state. In addition,
Each discharge port 80 (i) of the developer supply nozzle 70 faces obliquely downward, and the developer is discharged in the same direction.

A modification shown in FIGS. 14 and 15 has a structure in which each discharge port 80 (i)
A rectifying plate 110 for making the flow rate of the developing solution uniform is provided. In this example, the recess 11
2 is formed, and a box-like member 114 having an open top surface is formed in the recess 112 so that the bottom plate (rectifying plate) 110 is formed in the recess 11.
It is mounted with some floating from the bottom of 2.

The bottom plate (rectifying plate) 110 of the box-shaped member 114
, The lower discharge ports 80 (1), 80 (2),.
.. 116 (n) having appropriate diameters are formed at positions (locations) opposed to (n). The buffer chamber 118 is formed by the box-shaped member 114 and the lower surface 85 of the temperature control section 84, and the outlets of the developer passages 100 and 102 of the temperature control section 84 face both ends of the buffer chamber 118.

The developing solution flowing through the developing solution passages 100 and 102 is once received by the buffer chamber 118, and then the holes 116 (1), 116 (2),.
(n), and is sent to the discharge ports 80 (1), 80 (2),. As a result, the developer is discharged from the discharge ports 80 (1), 80 (2),... 80 (n) at a substantially uniform flow rate.

The mounting structure of the current plate 110 or the arrangement position and number of the holes 116 can be arbitrarily selected or modified.

As shown in FIGS. 7 and 8, the developer supply nozzle 70 has discharge ports 80 (1), 80 (2),... 80 (n).
Are not horizontal to the horizontal nozzle arm 76 but are inclined slightly obliquely (preferably 10 to 24).
゜). When the development process is performed,
The horizontal nozzle arm 76 moves in the horizontal direction (the direction of arrow F) perpendicular to the axial direction, and carries the developer nozzle 70 from the nozzle standby section 78 to a position above the semiconductor wafer W.

Next, the steps of the developing process in the developing unit (DEV) of this embodiment will be described with reference to FIGS.

The development process in the development unit (DEV) basically includes five steps as shown in FIG.
, And are included.

First, in the first step, the horizontal nozzle arm 76 is driven in the direction of arrow F to move the developer nozzle 70 from the position of the nozzle standby portion 78 to the first position above the peripheral edge of the semiconductor wafer W. (The position indicated by a solid line in FIG. 6). Each discharge port 8 of this nozzle 70
0 (1), 80 (2),... 80 (n) are directed to the upper opening of the cup CP. On the other hand, the drive motor 62 is started to rotationally drive the spin chuck 60, and the rotational speed of the semiconductor wafer W to be processed is increased to a high first rotational speed, for example, 1000.
Start at rpm.

Next, in the second step, as shown in FIGS. 6 and 7, the developer nozzle 70 is located at the first position P1.
Then, the discharge of the developer is started. The discharge flow rate may be set to, for example, 0.8 liter / second. In this way, the developer discharged vigorously from the developer supply nozzle 70 does not hit the semiconductor wafer W, but falls directly into the cup CP and is collected. The discharge of the developer outside the wafer at the first position P1 is performed for a predetermined time, for example, 0.3 seconds. During the second step, the rotation speed of the semiconductor wafer W is maintained at the first speed (1000 rpm).

Next, in the third step, while the developer is discharged from the developer supply nozzle 70 at a predetermined flow rate, for example, 0.8 liter / second, an appropriate scan speed, for example, 60
The horizontal nozzle arm 76 moves in the direction of arrow F at 100 mm / sec, and takes a predetermined time, for example, 1.0 second,
The developer nozzle 70 is moved from the first position P1 to the semiconductor wafer W.
Is moved to a second position P2 (the position shown in FIG. 8) which is set above the center of.

In the movement from the first position P 1 to the second position P 2, the developer supply nozzle 70
0 (1), 80 (2),... 80 (n) The semiconductor wafer W is scanned while discharging the developer with a more stable discharge flow.

On the other hand, also in the third step, the rotation speed of the semiconductor wafer W is maintained at the first speed (1000 rpm). Thus, in the third step, the developer supply nozzle 70
The developer discharged from the semiconductor wafer W is rotated at a high speed.
All over the surface of the wafer, and the entire surface of the wafer is wetted with the developer having a small thickness (pre-wet).

As understood from FIG. 7, when the developing solution from the developing solution supply nozzle 70 reaches the semiconductor wafer W immediately after the start of the scan, the discharge ports 80 (1) at both ends of the developing solution supply nozzle 70 are provided. , 80 (n) should strike (ride on) the peripheral edge of the semiconductor wafer W almost simultaneously.

Next, in a fourth step, the rotation speed of the semiconductor wafer W is rotated at a second rotation speed, which is a medium speed considerably lower than the first rotation speed (1000 rpm), for example, 100 rpm, and at the same time, the second rotation speed is increased. At the position P2, a predetermined flow rate from the developer supply nozzle 70, for example, 0.8 liter /
The developer is discharged in seconds. This process is performed for a predetermined time, for example, 1.5 seconds, whereby the liquid layer of the developing solution on the semiconductor wafer W becomes thicker from the center of the wafer.

What is important here is the magnitude of the acceleration when decelerating from the high-speed first rotation speed to the medium-speed second rotation speed. If the acceleration is too large, the centripetal force applied to the developer on the semiconductor wafer W becomes excessive, and a phenomenon that the developer is drawn to the center of the wafer, so-called pullback, may occur. When pullback occurs, bubbles are entrained in the liquid layer at the center of the wafer, and development defects are likely to occur. On the other hand, if the acceleration of the deceleration is too small,
There is a problem that the deceleration time is prolonged, the developing solution discharge time is correspondingly increased, and the total developing solution discharge amount is increased.

The inventor of the present invention has conducted intensive studies on this problem through repeated experiments. As a result, if the value of the acceleration of the deceleration is selected to be a value corresponding to the high-speed first rotation speed, for example, the first rotation speed becomes In the case of 1000 rpm, it was found that if the speed was selected around 1000 rpm / sec, pullback or development defects could be effectively prevented with the shortest deceleration time.

Next, in a fifth step, the rotation speed of the semiconductor wafer W is rotated at a low third rotation speed lower than the second rotation speed (100 rpm), for example, 30 rpm, and at the same time, the semiconductor wafer W is moved to the second position P2. The developer is discharged from the developer supply nozzle 70 at a predetermined flow rate, for example, 0.8 liter / second. This process is performed for a predetermined time, for example, 2.0 seconds. In this way, the developing solution discharged from the developing solution supply nozzle 70 uniformly falls on the surface of the semiconductor wafer W rotating at a low speed for a predetermined time, and the entire surface of the wafer is almost uniformly filled with a desired thickness.

Since the deceleration from the second rotation speed (100 rpm) to the third rotation speed (30 rpm) is small, the acceleration of the deceleration may be arbitrarily selected. For example, the speed may be set to 1000 rpm / sec. Good.

Through a series of steps as described above, the developer can be safely and uniformly deposited on the semiconductor wafer W. Particularly, in the present embodiment, the semiconductor wafer W is rotated at a high speed and the developing solution is supplied from the third step (pre-wet step) to the fourth step of rotating the semiconductor wafer W at a medium speed and the developing liquid is supplied. In order to shift to the fifth step (liquid filling step) of supplying the developer by rotating the wafer W at a low speed, the developer on the semiconductor wafer W is kept stable,
Pullback can be effectively prevented. Moreover,
When switching from the high-speed rotation in the third step to the medium-speed rotation in the fourth step, the speed is reduced at an acceleration corresponding to the high-speed rotation before the switching, so that pullback can be more effectively prevented. Therefore, development defects can be reduced as much as possible.

After the developer is filled on the semiconductor wafer W as described above, this state is maintained for a predetermined time to complete the developing process. Developer supply nozzle 70
Is transported by the horizontal nozzle arm 76 in the direction opposite to the arrow F after the fifth step, and returned to the nozzle standby section 78.

In the third to fifth steps, it is desirable that the developer supply nozzle 70 is separated from the semiconductor wafer W by an appropriate distance h (for example, 8 mm) as shown in FIG. If the distance h is too small (for example, 5 mm
In the following, there is a possibility that the developer on the semiconductor wafer W may adhere to the lower end of the developer supply nozzle 70. If the interval h is too large (for example, 14 mm or more), the impact of the developer on the wafer W increases, Development defects are likely to occur.

Each discharge port 8 of the developer supply nozzle 70
The direction (nozzle angle) θ of 0 (i) is desirably selected to an appropriate angle, for example, 45 °. If the nozzle angle θ is too large, it is difficult to supply the developing solution into the cup CP in the second step, and it is difficult to supply a later-described developing solution to be described later. Conversely, if the nozzle angle θ is too small, as shown in FIG. 11, there is a possibility that the developer 70 drips at the discharge port 80 (i) and the nozzle 70 is contaminated.

In the fourth and fifth steps, as shown in FIG. 12A, the developing solution discharged from one discharge port, for example, 80 (2) of the developing solution supply nozzle 70 is supplied to the semiconductor wafer. It is desirable to set the second position P2 so as to be supplied so as to almost completely surround the center point CW of W in order to prevent uneven development. As shown in FIG. 12B, the developer discharged from each of the two discharge ports, for example, 80 (1) and 80 (2) is applied to the center point CW of the semiconductor wafer W.
If the ink is supplied in such a manner as to collide in the vicinity, uneven development is likely to occur there.

The scanning of the developer supply nozzle 70 in this embodiment has several features. One is the discharge of the developing solution at a position (first position P1) where the developing solution supply nozzle 70 does not touch the semiconductor wafer W in the second step of moving the developing solution supply nozzle 70 upward from the side of the semiconductor wafer W as described above. But there are other important features.

That is, in the third to fifth steps, the developing solution discharged from the developing solution supply nozzle 70 hits the wafer surface in a direction not against the rotation of the semiconductor wafer W. That is, the developer from the nozzle 70 hits the wafer surface in an oblique direction, and the hit in the oblique direction is not against the rotation of the semiconductor wafer W. In particular, in the fourth and fifth steps, as shown in FIG. 8, the developer supply nozzle 7 is located at the second position P2.
The developer discharged from 0 is almost following the rotation of the semiconductor wafer W and hits the wafer surface.

In order to perform such a follow-up type supply, the scan area is set to the nozzle position shown in FIG.
It is good to set between the nozzle positions. The scan area depends on the number and the pitch of the ejection ports 80 of the nozzle 70, but is set in a quarter area of the semiconductor wafer W, that is, an area of 90 ° around the rotation center of the semiconductor wafer W. In this case, it is preferable that the scanning is performed such that the discharge port 80 (1) at the end of the nozzle 70 is orthogonal to the rotation direction of the semiconductor wafer W.

As described above, since the developing solution from the developing solution supply nozzle 70 is supplied onto the semiconductor wafer W with a soft impact, the surface of the wafer may be damaged, and bubbles may be generated in the developing solution being filled. In addition, development processing is performed safely and satisfactorily.

A rinsing nozzle (not shown) is provided separately from the developing solution supply nozzle 70. After the developing process, a rinsing solution is supplied to the semiconductor wafer W via the rinsing nozzle, and the developing solution on the wafer surface is washed. Dropped. Since the rinsing mechanism is not related to the gist of the present invention, its description is omitted.

The spin chuck in the above embodiment,
The structure, shape, and the like of each part such as the cup and the nozzle are merely examples, and various modifications are possible. The coating and developing system shown in FIGS. 1 to 5 is an example, and the present invention can be applied to other developing systems or apparatuses. Further, the above embodiment relates to an apparatus for developing a photoresist on a semiconductor wafer. However, the present invention can be applied to other substrates to be processed.

[0068]

As described above, according to the developing device of the present invention, it is possible to protect the substrate to be processed and to improve the quality of the developing process.

[Brief description of the drawings]

FIG. 1 shows a developing unit (apparatus) according to an embodiment of the present invention.
1 is a plan view showing the overall configuration of a coating and developing processing system including the above.

FIG. 2 is a front view showing the configuration of the coating and developing processing system of FIG.

FIG. 3 is a rear view showing the configuration of the coating and developing processing system of FIG. 1;

FIG. 4 is a schematic front view showing a flow of clean air in the coating and developing processing system of FIG. 1;

FIG. 5 is a schematic side view showing a flow of clean air in the coating and developing system of FIG. 1;

FIG. 6 is a schematic partial cross-sectional side view showing a configuration of a main part of a developing unit in the embodiment.

FIG. 7 is a schematic plan view showing the position of a developer supply nozzle at the start of developing solution discharge in the developing unit of the embodiment.

FIG. 8 is a schematic plan view showing the position of a developer supply nozzle at the end of scanning in the developing unit of the embodiment.

FIG. 9 is a schematic side view for explaining a developing process in the developing unit of the embodiment.

FIG. 10 is a schematic side view for explaining an angle and a height position of a nozzle suitable for a developing process of an embodiment.

FIG. 11 is a schematic side view illustrating a dripping of a developer at a discharge port of a nozzle.

FIG. 12 is a schematic side view illustrating a method of supplying a developing solution to a center point of a wafer in a developing process according to an embodiment.

FIG. 13 is a cross-sectional view illustrating a configuration of a developer supply nozzle in the developing unit of the example.

FIG. 14 is a cross-sectional view illustrating a configuration of a developer supply nozzle according to a modification.

FIG. 15 is a perspective view schematically showing a configuration of a main part of the developer supply nozzle of FIG.

[Explanation of symbols]

 CP cup 60 Spin chuck 66 Ring member 68 Buffer chamber 68a Gas inlet 70 Developer supply nozzle 76 Horizontal nozzle arm 80 (1) ... 80 (n) Discharge port

Claims (10)

[Claims] 1. A developing device for supplying a developing solution to the surface of a substrate to be processed via a nozzle while rotating the substrate to be processed placed on a spin chuck, wherein the nozzle is linearly arranged in a horizontal direction. A plurality of discharge ports arranged in a row, the nozzle being moved substantially linearly in a horizontal direction above the substrate to be processed, and the discharge ports being arranged in a horizontal plane with respect to an axis orthogonal to a direction in which the nozzle moves. Wherein the arrangement direction is inclined at a predetermined angle. 2. The developing apparatus according to claim 1, wherein the developing solution from the nozzle is supplied to the substrate to be processed within a region of 90 ° around the rotation center of the substrate. 3. The developing solution discharged from a predetermined one of the plurality of discharge ports at a set position within a movement range of the nozzle is supplied so as to surround a rotation center point of the substrate to be processed. The developing device according to claim 1, wherein the developing device comprises: 4. The method according to claim 1, wherein the nozzle is moved upward from a side of the substrate to be processed, and discharge of the developing solution is started from the nozzle at a position where the nozzle does not touch the substrate during the movement. The developing device according to claim 1. 5. The developing apparatus according to claim 4, wherein the nozzle is moved to a predetermined position above the substrate to be processed while the discharge is continued after the start of the discharge of the developer. 6. The developing solution discharged from discharge ports at both ends of the nozzle when the nozzle approaches the substrate to be processed hits the peripheral edge of the substrate to be processed almost simultaneously. 3. The developing device according to claim 1. 7. A cup for trapping the developer scattered from the substrate to be processed is provided around the spin chuck, and the developer discharged from the nozzle at the start of discharge of the developer is supplied to the cup. The developing device according to claim 4, wherein the developing device is directly received. 8. The developing device according to claim 1, wherein a discharge port of the nozzle is obliquely downward at a predetermined angle. 9. The method according to claim 1, wherein the developing solution from the nozzle hits the surface of the substrate to be processed in a direction that does not oppose the rotation of the substrate to be processed. Developing device. 10. The discharge port according to claim 1, wherein an arrangement direction of the discharge ports is inclined at an angle of 10 ° to 24 ° with respect to an axis orthogonal to the nozzle movement direction. Developing device.