JPH02141759A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH02141759A JPH02141759A JP29671588A JP29671588A JPH02141759A JP H02141759 A JPH02141759 A JP H02141759A JP 29671588 A JP29671588 A JP 29671588A JP 29671588 A JP29671588 A JP 29671588A JP H02141759 A JPH02141759 A JP H02141759A
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- substrate
- silicon substrate
- manufacturing apparatus
- liquid developer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 25
- 229910052710 silicon Inorganic materials 0.000 abstract description 25
- 239000010703 silicon Substances 0.000 abstract description 25
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- 238000013459 approach Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 235000006732 Torreya nucifera Nutrition 0.000 description 1
- 244000111306 Torreya nucifera Species 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造装置に係り、特にフォトレジ
スＩｆ現像する為の製造装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor device manufacturing apparatus, and more particularly to a manufacturing apparatus for developing a photoresist If.
従来のこの糧の７オトレジス）を現像する為の製造装置
は、シリコン基板を毎分２０回回転度で回転させながら
、シリコン基板上方に位置するノズルから、現像液を滴
下する装置であって、同現像液滴下時には、同ノズルが
シリコン基板の直径方向を単に一定速度で走査するもの
であった。The conventional manufacturing device for developing this food (7 Otoregis) is a device that drips a developing solution from a nozzle located above the silicon substrate while rotating the silicon substrate at 20 rotations per minute. When dropping the developer, the nozzle simply scanned the silicon substrate in the diametrical direction at a constant speed.
しかしながら前述した従来の７オトレジストを現像する
為の製造装置では、現像後の２オドレジストのパターン
寸法ではシリコン基板の中央部と外周部とで差を生ずる
という欠点がある。However, the above-mentioned conventional manufacturing apparatus for developing the 7-odresist has a drawback in that the pattern dimensions of the 2-odresist after development differ between the central part and the outer periphery of the silicon substrate.
この鳳因は、現像液滴下時に、現像液を滴下する為のノ
ズルが一定の滴下量で、かつシリコン基板の直径方向を
一定速度で走査する為、シリコン基板上の単位面積あた
りの現像液の滴下量がシリコン基板の中央部で大となり
、外周部で小となる為である。即ち、現像時に供給され
る現像液量がシリコン基板中央部と外周部とで異なる為
、フォトレジストと現像液との反応速度に差を生じ、そ
の結果シリコン基板上のフォトレジストのパターン寸法
が中央部と外周部で相異し、例えばポジ型フォトレジス
トの場合はパターン寸法が中央部で小、外周部で大とな
る。The reason for this is that when dropping the developer, the nozzle for dropping the developer drops at a constant rate and scans the diameter direction of the silicon substrate at a constant speed. This is because the amount of dripping is large at the center of the silicon substrate and small at the outer periphery. In other words, since the amount of developer supplied during development differs between the center and the outer periphery of the silicon substrate, a difference occurs in the reaction rate between the photoresist and the developer, and as a result, the pattern dimensions of the photoresist on the silicon substrate differ from the center. For example, in the case of a positive photoresist, the pattern size is small at the center and large at the outer periphery.
本発明の目的は、前記欠点が解決され、半導体基板の主
面上どこでも均一に現像液が注がれるようにした半導体
装置の製造装置全提供することにある０
〔問題点を解決するための手段・〕
本発明の構成は、半導体基板の主表面上に、ノズルから
現像液を滴下する半導体装置の製造装置において、前記
主面上の単位面積あたりの前記現像液の滴下量が略一定
になるように前記ノズルを走査する手段を有することを
特徴とする。SUMMARY OF THE INVENTION An object of the present invention is to provide an entire semiconductor device manufacturing apparatus in which the above-mentioned drawbacks are solved and a developer can be poured uniformly over the main surface of a semiconductor substrate. Means/] The structure of the present invention is such that in a semiconductor device manufacturing apparatus in which a developer is dropped from a nozzle onto the main surface of a semiconductor substrate, the amount of the developer dropped per unit area on the main surface is approximately constant. The present invention is characterized in that it includes means for scanning the nozzle so that the nozzle is scanned.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例の製造装ｇ１を示す側面
図である。同図において、本実施例の製造装置は、現像
液を滴下する為のノズル１が、シリコン基板２の直径方
向上を平行に走査し、かつその走査速度がシリコン基板
２の中心からの距離に略反比例する手段を有する。現像
液全滴下する為のノズルｌは、現像液の滴下中に、シリ
コン基板２の直径方向上をシリコン基板２の一端から他
端壕で走査し、かつ同ノズルの走査速度は、第４図に示
すように、シリコン基板２の中心４からの距離に反比例
する。即ち走査速度は基板端５に近づくにつけ、小とな
る。ここで、現像液の滴下量は一定である。FIG. 1 is a side view showing a manufacturing apparatus g1 according to a first embodiment of the present invention. In the figure, in the manufacturing apparatus of this embodiment, a nozzle 1 for dropping a developing solution scans in parallel in the diametrical direction of a silicon substrate 2, and the scanning speed is proportional to the distance from the center of the silicon substrate 2. It has means that are approximately inversely proportional. The nozzle l for dropping all of the developer solution scans the silicon substrate 2 in the diametrical direction from one end of the silicon substrate 2 to the other end while dropping the developer solution, and the scanning speed of the nozzle is as shown in FIG. As shown in , it is inversely proportional to the distance from the center 4 of the silicon substrate 2 . That is, the scanning speed decreases as it approaches the substrate edge 5. Here, the amount of developer solution dropped is constant.
第２図は本発明の第２の実施例の製造装置を示す側面図
である。同図において、本実施例の製造装置は、現像液
′ｔ−滴下する為の滴下口３ｔ−シリコン基板２の直径
方向上に複数配列し、かつ同滴下口同±３の間隔がシリ
コン基板２の中心からの距離に略反比例する手段を有す
る。第５因はシリコン基板２の中心４からの距離と、現
像液を滴下する為の滴下口３０間隔６との関係を示した
特性図である。FIG. 2 is a side view showing a manufacturing apparatus according to a second embodiment of the present invention. In the same figure, the manufacturing apparatus of this embodiment has a plurality of dripping ports 3t for developing solution 't' arranged in the diametrical direction of the silicon substrate 2, and an interval of ±3 of the same dropping ports 3t to the silicon substrate 2. has a means that is approximately inversely proportional to the distance from the center. The fifth factor is a characteristic diagram showing the relationship between the distance from the center 4 of the silicon substrate 2 and the interval 6 between the dropping ports 30 for dropping the developer.
本実施例では、ノズルｌが運動する為の機構及び同制御
部が必要でない為、全体の構造が単純であるという利点
がある。This embodiment has the advantage that the overall structure is simple because a mechanism for moving the nozzle l and a control section thereof are not required.
第３図は本発明の第３の実施例の製造装置を示す側面図
である。同図において、本実施例の製造装置は、現像液
を滴下する為のノズルｌがシリコン基板２の直径方向上
を一定速度で走査し、かつノズル１から滴下される滴下
量がシリコン基板２の中心からの距離に略正比例する手
段を有する。FIG. 3 is a side view showing a manufacturing apparatus according to a third embodiment of the present invention. In the figure, in the manufacturing apparatus of this embodiment, a nozzle 1 for dropping a developing solution scans at a constant speed in the diametrical direction of a silicon substrate 2, and the amount of drops dropped from the nozzle 1 is on the silicon substrate 2. It has a means that is approximately directly proportional to the distance from the center.
第６図に示すように、ノズルｌのシリコン基板２の中心
からの距離と、滴下流量との関係が正比例している。As shown in FIG. 6, the relationship between the distance of the nozzle l from the center of the silicon substrate 2 and the dropping flow rate is directly proportional.
以上本発明の半導体装置の製造装置は現像液を半導体基
板上に滴下する時に、同滴下量が基板上のすべての点で
均一になる様にした次の３つの実施例を含む。As described above, the semiconductor device manufacturing apparatus of the present invention includes the following three embodiments in which when a developer is dropped onto a semiconductor substrate, the amount of the developer dropped is uniform at all points on the substrate.
（：）現像液を滴下する為のノズルが、半導体基板の直
径方向上を走査し、かつその走査速度が基板の中心から
ノズルまでの距離に略反比例する手段。(:) A means in which a nozzle for dropping a developing solution scans the semiconductor substrate in the diametrical direction, and the scanning speed is approximately inversely proportional to the distance from the center of the substrate to the nozzle.
（１） 現像液を滴下する為の滴下口が、基板の直径
方向上に複数配列され、かつ同滴下口の間隔がシリコン
基板の中心からの距離に略反比例する手段。(1) A means in which a plurality of drip openings for dropping the developer are arranged in the diametrical direction of the substrate, and the interval between the drip openings is approximately inversely proportional to the distance from the center of the silicon substrate.
（Ｉｌｌ） 現像液を滴下する為のノズルが基板の直
径方向上を一定速度で走査し、かつノズルから滴下され
る現像液量が、基板の中心からノズルまでの距離に略正
比例する手段。(Ill) A means in which a nozzle for dropping a developing solution scans the substrate in the diametrical direction at a constant speed, and the amount of the developing solution dropped from the nozzle is approximately directly proportional to the distance from the center of the substrate to the nozzle.
以上説明した様に、本発明は、現像液の半導体基板への
滴下量が、主面上のすべての点で均一となる為、基板上
に形成されたフォトレジストのパターン寸法のばらつ＊
’ｅ低減することが出来る効果がある。As explained above, in the present invention, since the amount of the developer dripped onto the semiconductor substrate is uniform at all points on the main surface, variations in the pattern dimensions of the photoresist formed on the substrate are reduced*.
It has the effect of reducing 'e.
第１図は本発明の第１の実施例の半導体装置の製造装置
を示す側面図、第２図は本発明の第２の実施例の半導体
装置の製造装置金示す側面図、第３図は本発明の第３の
実施例の半導体装置の製造装置を示す側面図、第４図は
第１図の製造装置の動作を示す特性図、第５図は第２図
の製造装置の動作を示す特性図、第６図は第３図の製造
装置の動作を示す特性図である。
１・・・・・・ノズル、２・・・・・・シリコン基板、
３・・・・・・滴下口、４・・・・・・シリコン基板の
中心、５・・・・・・シリコン基板端、６・・・・・・
滴下口間隔。
をＩＩ￥］
＝＝＝＝＝チー
？、 ２０
ノ
榮３７
茅４−回
Ｖ−！；
図
第２投１1 is a side view showing a semiconductor device manufacturing apparatus according to a first embodiment of the present invention, FIG. 2 is a side view showing a semiconductor device manufacturing apparatus according to a second embodiment of the present invention, and FIG. 3 is a side view showing a semiconductor device manufacturing apparatus according to a second embodiment of the present invention. A side view showing a semiconductor device manufacturing apparatus according to a third embodiment of the present invention, FIG. 4 is a characteristic diagram showing the operation of the manufacturing apparatus of FIG. 1, and FIG. 5 shows an operation of the manufacturing apparatus of FIG. 2. Characteristic diagram, FIG. 6 is a characteristic diagram showing the operation of the manufacturing apparatus of FIG. 3. 1...Nozzle, 2...Silicon substrate,
3...Dripping port, 4...Center of silicon substrate, 5...Edge of silicon substrate, 6...
Dripping port spacing. II￥] =====Chi? , 20 Nosei 37 Kaya 4-times V-! ; Figure 2nd throw 1
Claims (1)
導体装置の製造装置において、前記主面上の単位面積あ
たりの前記現像液の滴下量が略一定になるように前記ノ
ズルを走査する手段を有することを特徴とする半導体装
置の製造装置。In a semiconductor device manufacturing apparatus that drops a developer solution from a nozzle onto a main surface of a semiconductor substrate, means for scanning the nozzle so that the amount of the developer solution dropped per unit area on the main surface is approximately constant. A manufacturing apparatus for a semiconductor device, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29671588A JPH02141759A (en) | 1988-11-22 | 1988-11-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29671588A JPH02141759A (en) | 1988-11-22 | 1988-11-22 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02141759A true JPH02141759A (en) | 1990-05-31 |
Family
ID=17837149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29671588A Pending JPH02141759A (en) | 1988-11-22 | 1988-11-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02141759A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6076979A (en) * | 1997-07-25 | 2000-06-20 | Dainippon Screen Mfg. Co., Ltd. | Method of and apparatus for supplying developing solution onto substrate |
| US6089762A (en) * | 1997-04-28 | 2000-07-18 | Dainippon Screen Mfg. Co., Ltd. | Developing apparatus, developing method and substrate processing apparatus |
-
1988
- 1988-11-22 JP JP29671588A patent/JPH02141759A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6089762A (en) * | 1997-04-28 | 2000-07-18 | Dainippon Screen Mfg. Co., Ltd. | Developing apparatus, developing method and substrate processing apparatus |
| US6076979A (en) * | 1997-07-25 | 2000-06-20 | Dainippon Screen Mfg. Co., Ltd. | Method of and apparatus for supplying developing solution onto substrate |
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