JPH0638122B2 - Method for manufacturing color solid-state image sensor - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention is to form each dye layer of a color filter on the surface of a color solid-state image pickup device by a photolithography method, and to form a predetermined color filter for color solid-state image pickup. The present invention relates to a method for manufacturing a color solid-state imaging device directly formed on the surface of an element, and more particularly to a manufacturing method for easily confirming the pattern accuracy of each dye layer of a color filter.

(Prior Art) In the case of a method of manufacturing a color solid-state image sensor by forming a color filter on a transparent substrate such as glass and bonding the color filter to the surface of the solid-state image sensor via an adhesive layer, the color filter on the transparent substrate is used. It is easy to check the accuracy of the pattern of each dye layer, but in the method of manufacturing a color solid-state image pickup device by directly forming a color filter on the surface of the color solid-state image pickup device, the material of the light receiving part on which the dye layer is formed is used. Is complicatedly composed of several different materials such as polysilicon, aluminum, and silicon single crystal, the shape of each dye pattern,
In particular, it is difficult to confirm the shape of the edge portion, and it is difficult to control the conditions such as exposure, development and focusing in the photolithography process.

(Problems to be Solved by the Invention) The present invention aims to facilitate the confirmation of the shape of each dye pattern when forming each dye pattern of a color filter on a color solid-state imaging device by a photolithography method. It is intended to facilitate the control of conditions such as exposure, development and focusing in the lithography process and improve the accuracy of each dye pattern of the color filter.

(Means for Solving the Problem) In order to easily confirm the shape of each dye pattern when forming each dye pattern on the color solid-state imaging device by the photolithography method, Simultaneously with the formation, a plurality of types of resolution check patterns having different thicknesses are formed in the margin portion around the light receiving area of the unit chip on which the color solid-state image pickup element is formed. A portion made of the same material is selected as the blank portion where the resolution check pattern is formed. For example, it is preferable to form all kinds of resolution check patterns of all dye layers in a portion made of only silicon. This is because, in a certain dye layer, when a part of the resolution check pattern is formed on silicon and the other part is formed on the aluminum layer, the reflection from the bottom is different between these silicon and aluminum. This is because it becomes difficult to make a unified judgment of the shapes. Similarly, when the resolution check pattern of a dye layer is formed on silicon and the resolution check pattern of another dye layer is formed on, for example, an aluminum layer, it becomes difficult to compare the states or conditions between the dye layers. .

In addition, it is preferable that one of the plurality of resolution check patterns to be formed has the same or similar thickness as the main portion of the pattern of the dye layer of the color filter.
The shape of the resolution check pattern is not particularly limited, but a shape in which the pattern swelling and thinning can be confirmed in a plurality of directions is preferable.

(Function) Since the substrates of the dye patterns of a plurality of groups formed in the portion composed of the same material in the margin portion around the light receiving area of the unit chip are the same material, the reflection condition from the bottom is the same.
Therefore, it is easy to confirm the shape of the dye pattern, and therefore it is extremely useful as a guide for confirming the formation state and formation conditions of the color filter dye pattern formed in the light receiving region.

(Embodiment) FIG. 1 is an enlarged plan view showing a part of a semiconductor wafer in which a light receiving region, a driving region and the like are formed for each unit chip. Each unit chip is surrounded by a scribe line 1. The light receiving area 2 is at the center. The resolution check pattern according to the present invention is, for example, the light receiving area 2
A peripheral marginal portion, for example, an appropriate margin between the bonding pads 3, is formed over most of the entire region and is formed of the same material (for example, a region 4 shown by a broken line and made of only Si, for example). The resolution check pattern is formed simultaneously with the formation of a color filter in the light-receiving flow area by the photolithography method, for each dye, a plurality of types in which the thickness of the pattern is variously changed. FIG. 2 shows an example of a resolution check pattern for a certain dye (for example, any one of red, green, and blue). That is, as shown in FIG. 8A, a group of four bar-shaped patterns having a width of "a" arranged in parallel in a horizontal direction and a vertical direction at intervals of "a", and as shown in FIG. A set in which rod-like patterns are similarly juxtaposed with a slightly narrower width "b" and a space "b",
A set in which rod-shaped patterns are similarly juxtaposed with a width "c" and a spacing "c" which are slightly narrower than those in FIG. (B), as shown in FIG. And a pair of rod-like patterns arranged in parallel at intervals "d". A clue to make a physical judgment that one set of these (A) to (D) (for example, the set of FIG. (C)) has the same size or a size close to the main pattern size of the dye layer of the color filter. It is preferable because Specific examples of the width of the pattern and the intervals “a”, “b”, “c” and “d” are 20 μm and 10 respectively.
μm, 5.0 μm and 3.0 μm. These resolution check patterns are formed for each dye layer and all on the same material. For example, if the area 4 cannot be formed completely, it is formed in another area 4'of the same material.

〔The invention's effect〕

As described in detail above, the present invention is a color in which each dye layer of a color filter is sequentially formed on the surface of a color solid-state image pickup device by a photographic etching method, and a predetermined color filter is directly formed on the surface of the color solid-state image pickup device. In the method for manufacturing a solid-state image pickup device, simultaneously with the formation of each of the dye layers, a plurality of types having different thicknesses are formed in a blank portion around the light-receiving region of the unit chip in which the solid-state image pickup device of the color is formed, in the margin portion. Since the pattern of is formed for each dye layer and the conditions of the photolithography process and the accuracy of each dye layer are confirmed based on these patterns, it is easier to select the appropriate conditions in the formation of each dye layer. Become.

[Brief description of drawings]

FIG. 1 is an enlarged plan view showing a part of a semiconductor wafer having a light receiving region on which a color solid-state image pickup device is formed and other driving regions, and FIG. 2 is a plan view showing an example of a resolution check pattern. 1 ... scribe line, 2 ... light receiving area, 3 ... bonding pad, 4, 4 '... resolution check pattern forming area.

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Shinji Ito 1-5-1 Taito, Taito-ku, Tokyo Toppan Printing Co., Ltd. (56) Reference JP-A-57-141850 (JP, A) JP-A-SHO 61-248469 (JP, A) JP-A-62-83701 (JP, A)

Claims (3)

[Claims] 1. A color solid-state image pickup device, wherein dye layers of a color filter are sequentially formed on a color solid-state image pickup device by a photolithography method, and predetermined color filters are directly formed on the surface of the color solid-state image pickup device. In the manufacturing method, in order to confirm the accuracy of the pattern of each dye layer under the conditions of the photolithography method, at the same time as the formation of each dye layer, the light receiving region of the unit chip in which the color solid-state imaging device is formed A method of manufacturing a color solid-state image pickup device, comprising forming a plurality of types of resolution check patterns having different thicknesses on a peripheral marginal portion made of the same material for each dye layer. 2. The manufacturing method according to claim 1, wherein the plurality of types of resolution check patterns include one having a thickness that is the same as or similar to the thickness of the main portion of the pattern of each dye layer. 3. The manufacturing method according to claim 1, which comprises a strip-shaped set in which the resolution check patterns are arranged in parallel in one direction and a strip-shaped set in which the resolution check patterns are arranged in parallel in a direction orthogonal thereto.