JP2008103611A - Liquid treating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To collect mist in a short time without using a suction means, and also to shorten a treatment time. <P>SOLUTION: A liquid treating device includes: a spin chuck 40 for horizontally and rotatably holding a semiconductor wafer W; a development liquid supply nozzle 55 for supplying a treatment liquid to the wafer; a washing liquid supply nozzle 58 for supplying a washing liquid to the wafer; and a cup 43 for surrounding the circumference of the wafer held by the spin chuck. A ring shape mist collecting part 46 with an inner opening and a mist collecting passage 47 are formed in the upper opening part of the cup. A gas supply port 48 to be connected to an air supply source 50 and a suction port 49 for communication between the mist collecting part and the mist collecting passage are formed in parts close to the mist collecting passage. When the spin chuck is rotated after supplying the washing liquid to the wafer, the mist is collected into the mist collecting passage via the mist collecting part and the suction port through the use of negative pressure caused by the stream of the air to be supplied from the air supply source to the gas supply port. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a liquid processing apparatus, and more particularly to a liquid processing apparatus that supplies a processing liquid to a target substrate such as a semiconductor wafer or an LCD substrate, and then supplies a cleaning liquid to perform processing. .

  Conventionally, in a photoresist process, which is one of semiconductor manufacturing processes, a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), the resist is exposed in a predetermined pattern, and then a developer is applied to the surface of the wafer. The resist pattern is formed by supplying and developing. In this photoresist process, a process of applying a protective film to the surface of the resist layer is generally incorporated for the purpose of protecting the resist.

  On the other hand, with the recent miniaturization and thinning of device patterns, there is an increasing demand for increasing the exposure resolution. One way to increase the resolution of exposure is to improve the exposure technique using existing light sources such as argon fluoride (ArF) and krypton fluoride (KrF) to increase the resolution. There is known an immersion exposure method in which exposure is performed in a state where the film is formed. In this immersion exposure technique, a light film (water film) is formed between the lens and the surface of the wafer, and light emitted from the light source passes through the lens and passes through the liquid film to irradiate the wafer. In this way, a predetermined resist pattern (circuit pattern) is transferred to the resist. Then, the exposure means is slid in the horizontal direction with the liquid film formed between the wafer and the exposure means is arranged at a position corresponding to the next transfer area (shot area), and the light is irradiated. By repeating, the circuit pattern is sequentially transferred onto the wafer surface.

  In this immersion exposure, since a liquid film (water film) is formed between the lens and the surface of the wafer, a part of the resist-containing component is eluted from the surface portion of the resist, but the eluted component is not dissolved. There is a possibility that the line width accuracy of the circuit pattern to be transferred by being attached to the lens surface is lowered. In addition, there is a problem in that if an elution component is contained in the water film even if it does not adhere to the lens surface, it affects the refractive index of light, resulting in a decrease in resolution and nonuniformity in line width accuracy. .

  As a method for solving this problem, the surface of the wafer on which the resist is applied is washed with a cleaning liquid such as pure water before exposure, so that the resist is eluted into the liquid layer formed on the surface of the wafer during immersion exposure. The amount of ingredients is suppressed. Further, after the exposure, the front and back surfaces of the wafer are cleaned with a cleaning liquid such as pure water, thereby removing components eluted from the resist into the liquid layer formed on the surface of the wafer during the immersion exposure.

  Conventionally, a spinner for applying a resist to a rotating wafer, supplying a resist, a developing solution or a cleaning solution to the wafer and performing the processing is generally used for the resist coating, developing and cleaning processing on the wafer. The liquid is spun off at high speed and dried.

  In the above-described coating, developing, and cleaning processes, mist is generated when the wafer is rotated at high speed to shake off the liquid and dried, and the mist beyond the cup surrounding the periphery of the wafer contaminates the processed wafer. There was a problem of contamination by adhering to surrounding equipment.

  As a method for solving the above problem, there is known a liquid processing method (apparatus) for sucking an atmosphere on a wafer from a suction port of a suction path member placed at a position close to the wafer (see, for example, Patent Document 1). .

An inner cup formed from an opening facing the outer edge of the wafer held by the spin chuck; and an outer cup provided around the inner cup and connected to an exhaust pipe to be sucked by suction means. , And a processing apparatus that scatters the liquid component of the coating liquid into the inner cup and sucks and exhausts the gas component into the outer cup is known (see, for example, Patent Document 2).
JP 2001-189260 A (Claims, FIG. 4) JP 2002-361155 A (Claims, FIGS. 3 and 8)

  However, since the techniques described in Japanese Patent Application Laid-Open Nos. 2001-189260 and 2002-361155 both recover the mist by suction by the suction means, the recovery time of the mist floating in the vicinity of the wafer is long, and the suction is performed. There was a problem that the consumption of exhaust gas for increased. Also, the generation of mist depends on the surface condition of the wafer, so that general-purpose control is difficult and the processing time is prolonged.

  The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a liquid processing apparatus capable of collecting mist in a short time without using suction means and reducing the processing time. To do.

  In order to achieve the above object, the invention according to claim 1 includes a substrate holding means for holding the substrate to be processed horizontally and rotatably holding the substrate, a processing liquid supply nozzle for supplying the processing solution to the substrate to be processed, In a liquid processing apparatus comprising: a cleaning liquid supply nozzle that supplies a cleaning liquid to a substrate to be processed; and a cup that surrounds the periphery of the substrate to be processed held by the substrate holding means. An annular mist collecting part and a mist collecting path that are open on the side are formed, and a gas supply port that is connected to a gas supply source and a suction port that communicates the mist collecting part and the mist collecting path are formed in the vicinity of the mist collecting path. When the substrate holding unit rotates after supplying the cleaning liquid to the substrate to be processed, the mist collecting unit and the mist collecting unit and the mist collecting unit The mist is formed so as to be recoverable in the mist recovery path through the suction port.

  With this configuration, after supplying the cleaning liquid to the substrate to be processed, the substrate holding unit rotates to supply the gas from the gas supply source to the gas supply port when the cleaning liquid adhering to the substrate to be processed is shaken and dried. Thus, the mist can be recovered in the mist recovery path via the mist recovery part and the suction port by the so-called ejector effect using the negative pressure generated by the airflow.

  According to a second aspect of the present invention, in the liquid processing apparatus according to the first aspect, an annular gas storage portion for temporarily storing the gas supplied from the gas supply source is formed in the gas supply port portion. An annular slit for gas supply is formed in the lower part of the gas storage part.

  By comprising in this way, after storing the gas supplied from a gas supply source in a gas storage part, gas can be supplied in a mist collection path from an annular slit.

  Further, the invention according to claim 3 is a liquid processing apparatus comprising a substrate holding means, a processing liquid supply nozzle, a cleaning liquid supply nozzle, and a cup, similar to the invention according to claim 1, wherein the upper opening of the cup has An annular mist collecting portion having an inner opening and a mist collecting path are formed, and a gas supply means is provided above the cup and supplies gas in a cylindrical curtain shape toward the cup. After supplying the cleaning liquid to the processing substrate, when the substrate holding means rotates, the gas supply means is formed so as to be able to supply a cylindrical curtain toward the cup.

  With this configuration, after supplying the cleaning liquid to the substrate to be processed, when the substrate holding unit rotates and the cleaning liquid adhering to the substrate to be processed is shaken and dried, the gas is cylindrical from the gas supply unit toward the cup. By supplying it in the form of a curtain, it is possible to prevent the mist from scattering out of the cup.

  According to a fourth aspect of the present invention, in the liquid processing apparatus according to the third aspect, a gas supply port for guiding the gas supplied from the gas supply means is formed in the upper portion of the mist recovery path, A suction port that communicates the mist collecting part and the mist collecting path is formed in a close part. In this case, an annular gas storage part that temporarily stores the gas supplied from the gas supply source is formed in the gas supply port part, and an annular slit for gas supply is formed below the gas storage part. (Claim 5).

  By comprising in this way, the gas supplied from a gas supply means is supplied toward a gas exhaust port from a gas supply port, and mist is collect | recovered in a mist collection path by the so-called ejector effect using the negative pressure by the air flow can do. In this case, by forming an annular gas storage part for temporarily storing the gas supplied from the gas supply source in the gas supply port part, and forming an annular slit for gas supply at the lower part of the gas storage part After the gas supplied from the gas supply source is stored in the gas storage section, the gas can be supplied from the annular slit into the mist recovery path.

  According to a sixth aspect of the present invention, as in the first and third aspects of the present invention, in the liquid processing apparatus comprising the substrate holding means, the processing liquid supply nozzle, the cleaning liquid supply nozzle and the cup, the upper opening of the cup In addition, an annular mist collecting part and a mist collecting path that are open on the inner side are formed, and a gas supply port that is connected to a gas supply source, a mist collecting part, and a mist collecting path are communicated with a neighboring part in the mist collecting path. A suction port is formed, and is provided with a gas supply means that is disposed above the cup and supplies a gas in a cylindrical curtain shape toward the cup. After supplying the cleaning liquid to the substrate to be processed, the substrate holding means When rotating the mist, the mist can be recovered in the mist recovery path through the mist recovery part and the suction port by using the negative pressure generated by the gas flow supplied from the gas supply source to the gas supply port. And forming on, toward the cup from the gas supply means is formed to be capable of supplying the gas to the tubular curtain shape comprising, characterized in that. In this case, an annular gas storage part that temporarily stores the gas supplied from the gas supply source is formed in the gas supply port part, and an annular slit for gas supply is formed below the gas storage part. (Claim 7).

  With this configuration, after supplying the cleaning liquid to the substrate to be processed, the substrate holding unit rotates to supply the gas from the gas supply source to the gas supply port when the cleaning liquid adhering to the substrate to be processed is shaken and dried. Thus, the mist can be recovered in the mist recovery path via the mist recovery part and the suction port by the so-called ejector effect using the negative pressure generated by the airflow. Further, by supplying the gas from the gas supply means toward the cup in a cylindrical curtain shape, it is possible to prevent the mist from scattering out of the cup. In this case, by forming an annular gas storage part for temporarily storing the gas supplied from the gas supply source in the gas supply port part, and forming an annular slit for gas supply at the lower part of the gas storage part After the gas supplied from the gas supply source is stored in the annular gas storage part, the gas can be supplied into the mist recovery path from the annular slit for gas supply formed in the lower part of the gas storage part (claim) Item 7).

  According to this invention, since it is configured as described above, the following excellent effects can be obtained.

  (1) According to the invention described in claim 1, after supplying the cleaning liquid to the substrate to be processed, when the substrate holding means rotates and the cleaning liquid adhering to the substrate to be processed is shaken and dried, the gas supply port is connected to the gas supply port. By supplying the gas to the mist, the mist can be recovered in the mist recovery path through the mist recovery part and the suction port by the so-called ejector effect using the negative pressure generated by the airflow. Therefore, the mist can be collected in a short time without using the suction means, and the processing time can be shortened.

  (2) According to the invention described in claim 2, since the gas supplied from the gas supply source can be supplied to the mist recovery path from the annular slit after storing the gas in the gas storage part, the above (1) In addition, the airflow can be further stabilized and the mist can be reliably recovered.

  (3) According to the invention described in claim 3, after supplying the cleaning liquid to the substrate to be processed, when the substrate holding means rotates and the cleaning liquid adhering to the substrate to be processed is shaken and dried, the gas supply means moves toward the cup. By supplying the gas in the form of a cylindrical curtain, it is possible to prevent the mist from scattering out of the cup. Therefore, the mist can be collected in a short time without using the suction means, and the processing time can be shortened.

  (4) According to the invention described in claim 4, the gas supplied from the gas supply means is supplied from the gas supply port toward the gas exhaust port, and the mist is misted by the so-called ejector effect utilizing the negative pressure generated by the air flow. Since it can collect | recover in a collection path, in addition to said (3), airflow can be stabilized further and mist collection | recovery can be performed reliably. In this case, by forming an annular gas storage part for temporarily storing the gas supplied from the gas supply source in the gas supply port part, and forming an annular slit for gas supply at the lower part of the gas storage part Since the gas supplied from the gas supply source is stored in the annular gas storage part, the gas can be supplied from the annular slit for gas supply formed in the lower part of the gas storage part into the mist recovery path. Furthermore, the airflow can be stabilized and the mist can be reliably recovered (Claim 5).

  (5) According to the invention described in claim 6, after supplying the cleaning liquid to the substrate to be processed, when the substrate holding means rotates and the cleaning liquid adhering to the substrate to be processed is shaken and dried, the gas supply port is supplied with the gas supply port. By supplying the gas to the mist, the mist can be recovered in the mist recovery path through the mist recovery part and the suction port by the so-called ejector effect using the negative pressure generated by the airflow. Further, by supplying the gas from the gas supply means toward the cup in a cylindrical curtain shape, it is possible to prevent the mist from scattering out of the cup. Therefore, in addition to the above (1) and (3), the mist can be collected in a shorter time and the processing time can be shortened. In this case, by forming an annular gas storage part for temporarily storing the gas supplied from the gas supply source in the gas supply port part, and forming an annular slit for gas supply at the lower part of the gas storage part Since the gas supplied from the gas supply source is stored in the annular gas storage part, the gas can be supplied from the annular slit for gas supply formed in the lower part of the gas storage part into the mist recovery path. Further, the airflow can be stabilized and the mist can be reliably recovered (claim 7).

  The best mode of the present invention will be described below with reference to the accompanying drawings.

  FIG. 1 is a schematic plan view showing the entire processing system in which an exposure processing apparatus is connected to a coating / development processing apparatus to which the liquid processing apparatus according to the present invention is applied, and FIG. 2 is a schematic perspective view of the processing system.

  The processing system includes a carrier station 1 for carrying in and out a plurality of, for example, 25, semiconductor wafers W (hereinafter referred to as wafers W), which are substrates to be processed, and a carrier station 1 for taking in and out the carrier 10. A processing unit 2 that performs resist coating, development processing, and the like on the wafer W; an exposure unit 4 that performs immersion exposure on the surface of the wafer W in a state in which a liquid layer that transmits light is formed on the surface of the wafer W; An interface unit 3 connected to the exposure unit 4 and delivering the wafer W is provided.

  The carrier station 1 includes a mounting unit 11 on which a plurality of carriers 10 can be placed side by side, an opening / closing unit 12 provided on a front wall as viewed from the mounting unit 11, and a wafer from the carrier 10 via the opening / closing unit 12. Delivery means A1 for taking out W is provided.

  Further, a processing unit 2 surrounded by a housing 20 is connected to the back side of the carrier station 1, and the processing unit 2 is a shelf unit in which heating / cooling units are sequentially arranged from the front side. Main transfer means A2 and A3 for transferring the wafer W between the units U1, U2 and U3 and the liquid processing units U4 and U5 are alternately arranged. The main transport means A2 and A3 include one surface portion on the shelf unit U1, U2 and U3 side arranged in the front-rear direction when viewed from the carrier station 1, and one surface portion on the right liquid processing unit U4 and U5 side which will be described later. And a space surrounded by a partition wall 21 composed of a rear surface portion forming one surface on the left side. Further, between the carrier station 1 and the processing unit 2 and between the processing unit 2 and the interface unit 3, a temperature / humidity provided with a temperature control device for the processing liquid used in each unit, a duct for temperature / humidity control, and the like. An adjustment unit 22 is arranged.

  The shelf units U1, U2, and U3 are configured such that various units for performing pre-processing and post-processing of the processing performed in the liquid processing units U4 and U5 are stacked in a plurality of stages, for example, 10 stages. A heating unit (HP) for heating (baking) the wafer W, a cooling unit (CPL) for cooling the wafer W, and the like are included. Further, as shown in FIG. 2, for example, as shown in FIG. 2, the liquid processing units U4 and U5 include a bottom antireflection film coating unit (BCT) 23 for applying an antireflection film on a chemical solution storage portion such as a resist or a developing solution, and a top antireflection film. A film coating unit (TCT) 24, a coating unit (COT) 25, a developing unit (DEV) 26 for supplying a developing solution to the wafer W and developing it, and the like are stacked in a plurality of stages, for example, five stages. The coating / developing apparatus includes a liquid processing apparatus according to the present invention that cleans a wafer W coated with a resist before exposure and also cleans the wafer W after exposure. In this example, the liquid processing apparatus performs development. The unit (DEV) 26 is provided.

  In this case, as shown in FIG. 4, the liquid processing apparatus, that is, the development processing apparatus includes a spin chuck 40 that constitutes a substrate holding unit that sucks and sucks the central portion of the back surface of the wafer W and holds it horizontally. The spin chuck 40 is connected to a drive mechanism 42 via a shaft portion 41, and is configured to be movable up and down and rotated while the wafer W is held by the drive mechanism 42. Although not shown, the drive mechanism 42 is electrically connected to the control means, and the rotation speed of the spin chuck 40 is controlled based on a control signal from the control means. Further, a cup 43 including an outer cup 43a and an inner cup 43b that are open on the upper side so as to surround the side of the wafer W held by the spin chuck 40 is provided. In addition, a liquid receiving portion 44a having a concave shape is formed on the bottom side of the cup 43 over the entire circumference on the lower peripheral side of the wafer W, and a discharge port 44b is provided at the bottom of the liquid receiving portion 44a. ing.

  An annular liquid recovery passage 45 is formed inside the inner cup 43b of the cup 43, and an annular mist recovery portion 46 and a mist recovery passage that are open on the inner side to the upper openings of the outer cup 43a and the inner cup 43b. 47 is formed. A plurality of, for example, eight gas supply ports 48 and suction ports 49 are formed concentrically on the mist collection path 47 in the vicinity of the upper part and the side part (see FIG. 5). A gas supply source, for example, an air supply source 50 is connected to the gas supply port 48 via a gas supply pipe 51. The gas supply pipe 51 is provided with an on-off valve V 1. When air is supplied from the air supply source 50 to the gas supply port 48 by opening the on-off valve V 1, the air enters the mist collection path 47. The mist can be collected in the mist collecting passage 47 through the mist collecting portion 46 and the suction port 49 by the ejector effect in which the negative pressure caused by the air current acts, that is, the negative pressure caused by the air current acts. The air is supplied when the spin chuck 40 rotates after supplying the cleaning liquid to the wafer W.

  As shown in FIG. 4, a drain line 52 provided with a drain valve V <b> 4 is connected to the liquid recovery path 45 provided in the cup 43. The drain line 52 connected to the drain line 52 and the discharge port 44b is connected to the gas-liquid separator 54, and is configured to be gas-liquid separated into gas and waste liquid by the gas-liquid separator 54.

  On the other hand, on the upper side of the wafer W held by the spin chuck 40, a developing solution supply nozzle 55 (processing solution supply nozzle) facing the central portion of the surface of the wafer W through a gap is provided so as to be movable back and forth and up and down. It has been. The developing solution supply nozzle 55 is connected to a developing solution supply source 57 (processing solution supply source) through a developing solution supply line 56 provided with an on-off valve V2 capable of adjusting the flow rate. Further, a cleaning liquid supply nozzle 58 is provided which is opposed to the surface of the wafer W through a gap and is provided with a slit-shaped cleaning liquid discharge port 58a which is the same as or longer than the diameter of the wafer W and can be moved forward and backward. ing. The cleaning liquid supply nozzle 58 is connected to a supply source 60 of cleaning liquid, for example, pure water, through a supply path 59 provided with an on-off valve V3 capable of adjusting the flow rate. In this case, the on-off valves V2 and V3 are opened and closed so that the flow rate can be adjusted based on a control signal from a control unit (not shown), and a predetermined amount of developer and pure water (cleaning liquid) are supplied (discharged) to the surface of the wafer W. It has come to be.

  The cleaning liquid supply nozzle 58 includes a temperature adjustment unit 61 for adjusting the temperature of the cleaning liquid. The temperature adjusting unit 61 is configured in a double-pipe structure with a temperature-controlled water channel formed so as to surround the outside of the supply path 59, and is configured so that the temperature of the cleaning liquid is adjusted by this temperature-controlled water. Yes.

  As shown in FIG. 3, the interface unit 3 includes a first transfer chamber 3A and a second transfer chamber 3B that are provided between the processing unit 2 and the exposure unit 4 in the front and rear directions. One wafer transfer unit 30A and a second wafer transfer unit 30B are provided. The first wafer transfer unit 30A includes a base 31A that can be moved up and down and rotatable about a vertical axis, and an arm 32A that is movable on and off the base 31A. The second wafer transfer unit 30B is composed of a base 31B that can be raised and lowered and rotatable about a vertical axis, and an arm 32B that is movable on and off the base 31B.

  In the first transfer chamber 3A, a peripheral exposure apparatus (WEE) for selectively exposing only the edge portion of the wafer W on the left side when viewed from the carrier station 1 side with the first wafer transfer unit 30A interposed therebetween. 33) and two buffer cassettes 34 for temporarily storing a plurality of, for example, 25 wafers W are provided, for example, stacked one above the other. Similarly, on the right side, a delivery unit 35, two high-precision temperature control units 36 each having a cooling plate, for example, and a heating / cooling unit (PEB) 37 for PEB processing the exposed wafer W are provided, for example, stacked one above the other. Yes. Also, delivery stages 38A and 38B for delivering the wafer W between the second transfer chamber 3B and the exposure unit 4 through the wafer transfer port 3a formed on the exposure unit 4 side are provided side by side. It has been. For example, three substrate support pins 39 for supporting the wafer W from the back surface side are provided on the front surfaces of the delivery stages 38A and 38B.

  Next, a procedure for processing the wafer W using the coating / developing apparatus will be described. Here, when a bottom antireflection film (BARC) is formed on the surface of the wafer W, a resist layer is applied thereon, and a top antireflection film TC (hereinafter referred to as a protective film TC) is laminated on the surface of the resist layer. Will be described. First, for example, when the carrier 10 containing 25 wafers W is placed on the placement unit 11, the lid of the carrier 10 is removed together with the opening / closing unit 12, and the wafer W is taken out by the delivery means A1. Then, the wafer W is delivered to the main transfer means A2 via a delivery unit (not shown) that forms one stage of the shelf unit U1, and is placed on the surface of the wafer W by a unit (BCT) 23 as a pretreatment of the coating treatment. An antireflection film (BARC) is formed. Then, it is transported to the heat treatment section of the shelf unit U1 by the main transport means A2 and prebaked (CLHP).

  Thereafter, the wafer W is carried into a coating unit (COT) 25 by the main transfer means A2, and a resist is coated on the entire surface of the wafer W in a thin film shape. Then, it is transported to the heat treatment section of the shelf unit U2 by the main transport means A2 and prebaked (CLHP).

  Thereafter, the protective film TC is formed on the surface of the resist layer of the wafer W by the unit (TCT) 24 by the main transfer means A2. Then, it is transported to the heat treatment section of the shelf unit U2 by the main transport means A2 and prebaked (CLHP). Thereafter, the wafer W is transferred to the transfer unit 35 by the main transfer means A2, and then transferred to the developing unit (DEV) 26 by the arm 32A of the interface unit 3 and held by the spin chuck 40. In this state, the cleaning liquid supply nozzle The cleaning liquid supply nozzle 58 is disposed in a state where the cleaning liquid, for example, pure water is discharged from the discharge port 58a at a predetermined flow rate and slightly floated from the surface of the wafer W. Scan (slide movement) toward the other end. As a result, the cleaning liquid (pure water) is supplied to the surface of the wafer W, strictly, the surface of the top protective film TC, and the dissolved components on the surface of the protective film are dissolved into the cleaning liquid to clean the wafer W. During this cleaning process, the cleaning liquid (pure water) scattered on the outer peripheral side of the wafer W is recovered in the liquid recovery path 45. Thereafter, after the cleaning liquid supply nozzle 58 is retracted, the wafer W is rotated at high speed around the vertical axis by the spin chuck 40, and spin drying is performed to shake off the cleaning liquid from the wafer W. At this time, when the on-off valve V1 is opened and air is supplied from the air supply source 50 to the gas supply port 48, the air flows along the mist recovery passage 47, and the negative pressure due to the airflow is used, that is, the negative pressure due to the airflow. The mist is recovered in the mist recovery path 47 through the mist recovery part 46 and the suction port 49 by the ejector effect that acts on. The mist recovered in the mist recovery path 47 is received by a liquid receiving portion 44 a provided at the lower portion of the cup 43, discharged from the discharge port 44 b to the external gas-liquid separation portion 54, and separated by the gas-liquid separation portion 54. Is done.

  By performing the pre-exposure cleaning as described above, it is possible to more reliably suppress exposure of the watermark on the surface of the wafer W during pre-baking and affecting the exposure.

  Thereafter, the wafer W is unloaded from the developing unit by the arm 32A, transferred to the second wafer transfer unit 30B, and placed on the transfer unit 37A. The wafer W is carried into the exposure unit 4 through a wafer transfer port 3a by a transfer unit (not shown) provided in the exposure unit 4, and the exposure unit 1 is disposed so as to face the surface of the wafer W, so that immersion exposure is performed. Is done.

  Thereafter, the wafer W that has been subjected to the immersion exposure is placed on the transfer unit 37B by the transfer means (not shown). Next, the wafer W is taken out from the transfer unit 37B by the second wafer transfer unit 30B, further transferred to the first wafer transfer unit 30A, transferred to the developing unit (DEV) 26, and held by the spin chuck 40. In this state, the cleaning liquid supply nozzle 58 is disposed above the center of the wafer W, and the cleaning liquid, that is, pure water is discharged from the discharge port 58a at a predetermined flow rate. As a result, a cleaning liquid (pure water) is supplied to the surface of the wafer W, strictly speaking, to the surface of the protective film. As a result, the protective film dissolves and the surface of the wafer W, specifically the surface of the protective film, is exposed during immersion exposure. The generated water droplets, particles, spots, etc. are reliably removed. During this cleaning process, the cleaning liquid (pure water) scattered on the outer peripheral side of the wafer W is recovered in the liquid recovery path 45.

  Thereafter, after the cleaning liquid supply nozzle 58 is retracted, the wafer W is rotated at high speed around the vertical axis by the spin chuck 40, and spin drying is performed to shake off the cleaning liquid from the wafer W. At this time, when the on-off valve V1 is opened and air is supplied from the air supply source 50 to the gas supply port 48, the air flows along the mist recovery passage 47, and the negative pressure due to the airflow is used, that is, the negative pressure due to the airflow. The mist is recovered in the mist recovery path 47 through the mist recovery part 46 and the suction port 49 by the ejector effect that acts on. The mist recovered in the mist recovery path 47 is received by a liquid receiving portion 44 a provided at the lower portion of the cup 43, discharged from the discharge port 44 b to the external gas-liquid separation portion 54, and separated by the gas-liquid separation portion 54. Is done.

  After the cleaning and drying after the exposure, the wafer W is taken out from the developing unit (DEV) 26 by the second wafer transfer unit 30B, and further transferred to the first wafer transfer unit 30A for the first wafer transfer. Is carried into a heating / cooling unit (PEB) 37 by the wafer transfer unit 30A. Here, after the wafer W is roughly cooled, a post-exposure bake (PEB) process is performed in which the acid generated from the acid generator contained in the resist is diffused into the internal region by being heated to a predetermined temperature. . Then, when the resist component chemically reacts due to the catalytic action of the acid, the reaction region becomes soluble in the developer in the case of a positive type resist, for example.

  The wafer W that has been subjected to the PEB process is unloaded from the heating / cooling unit 37 by the first wafer transfer unit 30A, and is loaded into the processing unit 2 via the delivery unit of the shelf unit U3. Within the processing unit 2, the wafer W is carried into the developing unit (DEV) 26 by the main transfer means A3, and the developing solution is supplied to the surface thereof by the developing solution supply nozzle 55 provided in the developing unit (DEV) 26. Development processing is performed. Thus, a predetermined resist pattern is formed by dissolving a portion that is soluble in the developer in the resist film on the surface of the wafer W. Further, a rinsing liquid such as pure water is supplied to the wafer W from a rinsing nozzle (not shown) to perform a rinsing process, and then spin drying is performed to shake off the rinsing liquid. At this time, when the on-off valve V1 is opened and air is supplied from the air supply source 50 to the gas supply port 48, the air flows along the mist collection path 47, as in the above-described cleaning before and after exposure. The mist is recovered in the mist recovery passage 47 through the mist recovery part 46 and the suction port 49 by utilizing the negative pressure due to the air flow, that is, the ejector effect in which the negative pressure due to the air current acts.

  Thereafter, the wafer W is unloaded from the developing unit (DEV) 26 by the main transfer means A3, and returned to the original carrier 10 on the mounting portion 11 via the main transfer means A2 and the transfer means A1, and a series of coating operations.・ End development processing.

  In the above embodiment, the bottom antireflection film (BARC) is formed on the surface of the wafer W, the resist layer (R) is formed on the surface, and the top antireflection film (TC) is further laminated on the surface. However, even when the bottom antireflection film (BARC) is not provided, the same effect as the above embodiment can be obtained. The processing procedure in this case is processed in the order of resist coating process → pre-baking process → top antireflection film coating process → pre-baking process → pre-exposure cleaning process → immersion exposure process → post-exposure cleaning process → post-exposure baking process → development process. The

  In the above embodiment, the case where the liquid processing apparatus according to the present invention is applied to the development processing apparatus of the development unit (DEV) 26 has been described. However, the liquid processing apparatus may be provided independently on the interface unit 3. Good.

  In the above embodiment, the liquid processing apparatus according to the present invention supplies the air supplied from the air supply source 50 directly to the gas supply port 48 and mists the mist by the ejector effect using the negative pressure generated by the airflow. Although the case where it is the structure collect | recovered in the collection path 47 was demonstrated, it is not necessarily limited to this structure.

  For example, as shown in FIG. 6, an annular gas storage portion 63 (hereinafter referred to as a buffer portion 63) that temporarily stores the air supplied from the air supply source 50 is formed in the gas supply port 48 portion. A structure in which an annular slit 64 for supplying gas is formed in the lower portion of the portion 63 may be used.

  By comprising in this way, after air supplied from the air supply source 50 is temporarily stored in the buffer part 63, gas can be supplied into the mist collection path 47 from the annular slit 64, so that the airflow is further stabilized. Thus, the mist can be reliably collected.

  Further, as shown in FIG. 7, gas supply means 71 for supplying a gas in a cylindrical curtain shape toward the cup 43, that is, air purified by the filter unit, to the filter unit 70 disposed above the cup 43. It is good also as the structure provided. In this case, a gas supply port 48 that guides the air supplied from the gas supply means 71 is formed in the upper part of the mist recovery passage 47, and the mist recovery portion 46 and the mist recovery passage 47 are located in the vicinity of the gas supply port 48. Is formed. The filter unit 70 is connected to an air supply duct (not shown). Moreover, the gas supply means 71 is formed by the cylindrical member which has the annular slit attached to the lower surface of the filter unit 70, for example.

  With this configuration, after the cleaning liquid is supplied to the wafer W, when the spin chuck 40 rotates, air is supplied from the gas supply means 71 toward the cup 43 in the form of a cylindrical curtain so that the inside and outside of the cup 43 are externally provided. The atmosphere can be cut off. Further, when the air supplied from the gas supply means 71 is supplied to the gas supply port 48, the air flows along the mist collection path 47, and the ejector effect in which the negative pressure due to the airflow is used, that is, the negative pressure due to the airflow acts. As a result, the mist generated in the cup 43 through the mist collection part 46 and the suction port 49 is collected in the mist collection path 47. Therefore, it is possible to prevent the mist from scattering to the outside of the cup 43 and to collect the mist in the mist collection path 47.

  Further, as shown in FIG. 8, an annular buffer portion 63A for temporarily storing the air supplied from the air supply source 50 is formed at the gas supply port 48 in the liquid processing apparatus shown in FIG. It is good also as a structure which formed the annular slit 64A for gas supply in the lower part of the part 63A.

  By configuring in this way, after the air supplied from the gas supply means 71 is temporarily stored in the buffer part 63A, the gas can be supplied from the annular slit 64A into the mist collection path 47, and therefore, as shown in FIG. In addition to the structure having the above structure, the airflow can be further stabilized and the mist can be reliably recovered.

  Moreover, it is good also as a structure which combined the thing of the form mentioned above as another form of a liquid processing apparatus. That is, as shown in FIG. 9, the gas supply port 48 and the suction port 49 are formed in the vicinity of the upper portion and the side portion in the mist recovery passage 47, and air is supplied to the gas supply port 48 via the gas supply conduit 51. Connect the source 50. On the other hand, a gas supply is supplied to the filter unit 70 disposed above the cup 43 in a cylindrical curtain shape toward the cup 43, that is, air purified by the filter unit from the gas supply port 48 of the cup 43 to the inside. It is good also as a structure which provides the means 71. FIG. In this case, as indicated by a two-dot chain line in FIG. 9, a buffer part 63 for temporarily storing the air supplied from the air supply source 50 is formed at the gas supply port 48 part, and at the lower part of the buffer part 63. An annular slit 64 for supplying gas may be formed.

  With this configuration, when air is supplied from the air supply source 50 to the gas supply port 48, the air flows along the mist recovery passage 47, and the mist is recovered by the ejector effect that uses the negative pressure generated by the airflow. The mist can be recovered in the mist recovery path 47 via the portion 46 and the suction port 49. In addition, air can be supplied from the gas supply means 71 toward the cup 43 in a cylindrical curtain shape to shut off the atmosphere inside and outside the cup 43.

  In the liquid processing apparatus shown in FIGS. 6 to 9, since the other parts are the same as those of the first embodiment shown in FIG. 4, the same parts are denoted by the same reference numerals and description thereof is omitted.

1 is a schematic plan view showing an entire processing system in which an exposure processing apparatus is connected to a coating / development processing apparatus to which a liquid processing apparatus according to the present invention is applied. It is a schematic perspective view of the said processing system. It is a perspective view which shows the interface part in the said processing system. 1 is a schematic cross-sectional view showing a first embodiment of a liquid processing apparatus according to the present invention. It is the schematic plan view (a) of the said liquid processing apparatus, the expanded sectional view along the II line of (a), and the expanded sectional view (c) along the II-II line of (a). It is a schematic sectional drawing which shows 2nd Embodiment of the liquid processing apparatus which concerns on this invention. It is a schematic sectional drawing which shows 3rd Embodiment of the liquid processing apparatus which concerns on this invention. It is a schematic sectional drawing which shows 4th Embodiment of the liquid processing apparatus which concerns on this invention. It is a schematic sectional drawing which shows 5th Embodiment of the liquid processing apparatus which concerns on this invention.

Explanation of symbols

W Semiconductor wafer (substrate to be processed)
40 Spin chuck (substrate holding means)
43 Cup 46 Mist recovery section 47 Mist recovery path 48 Gas supply port 49 Suction port 50 Air supply source (gas supply source)
55 Developer supply nozzle (Processing solution supply nozzle)
58 Cleaning liquid supply nozzle 63, 63A Buffer part (gas storage part)
64, 64A annular slit 70 filter unit 71 gas supply means

Claims (7)

A substrate holding means for holding the substrate to be processed horizontally and rotatably, a processing liquid supply nozzle for supplying a processing liquid to the substrate to be processed, a cleaning liquid supply nozzle for supplying a cleaning liquid to the substrate to be processed, and the substrate A liquid processing apparatus comprising: a cup surrounding a substrate to be processed held by a holding unit;
An annular mist collecting portion and an mist collecting passage that are open on the inner side are formed in the upper opening of the cup, and a gas supply port that is connected to a gas supply source, a mist collecting portion, and a mist are disposed in proximity to the mist collecting passage. Forming a suction port that communicates with the collection path,
After the cleaning liquid is supplied to the substrate to be processed, when the substrate holding unit rotates, the mist collecting unit and the suction port are connected by using a negative pressure generated by a gas stream supplied from the gas supply source to the gas supply port. A liquid processing apparatus, wherein the mist is formed so as to be recoverable in the mist recovery path. In the liquid processing apparatus of Claim 1,
In the gas supply port portion, an annular gas storage portion for temporarily storing the gas supplied from the gas supply source is formed, and an annular slit for gas supply is formed below the gas storage portion. A liquid processing apparatus. A substrate holding means for holding the substrate to be processed horizontally and rotatably, a processing liquid supply nozzle for supplying a processing liquid to the substrate to be processed, a cleaning liquid supply nozzle for supplying a cleaning liquid to the substrate to be processed, and the substrate A liquid processing apparatus comprising: a cup surrounding a substrate to be processed held by a holding unit;
In the upper opening of the cup, an annular mist collecting part and a mist collecting path that are open on the inner side are formed,
It is arranged above the cup, and comprises gas supply means for supplying gas in a cylindrical curtain shape toward the cup,
After supplying the cleaning liquid to the substrate to be processed, the liquid is formed so that gas can be supplied in a cylindrical curtain shape from the gas supply means toward the cup when the substrate holding means rotates. Processing equipment. In the liquid processing apparatus of Claim 3,
A gas supply port that guides the gas supplied from the gas supply means is formed in the upper part of the mist recovery path, and a suction port that connects the mist recovery section and the mist recovery path is formed in a portion adjacent to the gas supply port. A liquid processing apparatus characterized by comprising: In the liquid processing apparatus of Claim 4,
In the gas supply port portion, an annular gas storage portion for temporarily storing the gas supplied from the gas supply source is formed, and an annular slit for gas supply is formed below the gas storage portion. A liquid processing apparatus. A substrate holding means for holding the substrate to be processed horizontally and rotatably, a processing liquid supply nozzle for supplying a processing liquid to the substrate to be processed, a cleaning liquid supply nozzle for supplying a cleaning liquid to the substrate to be processed, and the substrate A liquid processing apparatus comprising: a cup surrounding a substrate to be processed held by a holding unit;
In the upper opening of the cup, an annular mist collecting part and a mist collecting path that are open on the inner side are formed, and a gas supply port that is connected to a gas supply source is disposed in the vicinity of the mist collecting path; Form a suction port communicating with the mist collection path,
It is arranged above the cup, and comprises gas supply means for supplying gas in a cylindrical curtain shape toward the cup,
After the cleaning liquid is supplied to the substrate to be processed, when the substrate holding unit rotates, the mist recovery unit and the suction port are connected using the negative pressure due to the gas flow supplied from the gas supply source to the gas supply port. The liquid processing apparatus is characterized in that the mist is formed so as to be recoverable in the mist recovery path, and the gas is supplied from the gas supply means toward the cup in a cylindrical curtain shape. In the liquid processing apparatus of Claim 6,
In the gas supply port portion, an annular gas storage portion for temporarily storing the gas supplied from the gas supply source is formed, and an annular slit for gas supply is formed below the gas storage portion. A liquid processing apparatus.

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